CN106458763B - 氧化物烧结体、其制造方法及溅射靶 - Google Patents
氧化物烧结体、其制造方法及溅射靶 Download PDFInfo
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- CN106458763B CN106458763B CN201580033197.1A CN201580033197A CN106458763B CN 106458763 B CN106458763 B CN 106458763B CN 201580033197 A CN201580033197 A CN 201580033197A CN 106458763 B CN106458763 B CN 106458763B
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- sintered body
- oxide
- oxide sintered
- titanium
- powder
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010936 titanium Substances 0.000 claims abstract description 92
- 239000011701 zinc Substances 0.000 claims abstract description 88
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 31
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 28
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 27
- 229910003080 TiO4 Inorganic materials 0.000 claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 239000011159 matrix material Substances 0.000 claims abstract description 8
- 239000000470 constituent Substances 0.000 claims abstract description 7
- 239000000843 powder Substances 0.000 claims description 51
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 36
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 31
- 238000005245 sintering Methods 0.000 claims description 23
- 238000004544 sputter deposition Methods 0.000 claims description 22
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 20
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 10
- 238000000465 moulding Methods 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 9
- 238000002441 X-ray diffraction Methods 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 230000002159 abnormal effect Effects 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000011156 evaluation Methods 0.000 description 24
- 208000037584 hereditary sensory and autonomic neuropathy Diseases 0.000 description 15
- 239000011787 zinc oxide Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
- 239000011324 bead Substances 0.000 description 7
- 238000005336 cracking Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 239000011812 mixed powder Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000007723 die pressing method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
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- 238000010298 pulverizing process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910016523 CuKa Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
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- 230000014759 maintenance of location Effects 0.000 description 1
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- 229920001778 nylon Polymers 0.000 description 1
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- 238000001556 precipitation Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical group [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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Abstract
本发明的目的在于,提供一种即使在高功率成膜时异常放电现象也少、没有靶裂纹的用于溅射靶的氧化物烧结体。一种氧化物烧结体,其具有锌、铝、钛及氧作为构成元素,其特征在于,在将锌、铝、钛的含量分别设为Zn、Al、Ti时,构成该烧结体的元素的原子比为Al/(Zn+Al+Ti)=0.035~0.050Ti/(Zn+Al+Ti)=0.05~0.20,该烧结体中以Zn2TiO4结晶相为母相的晶粒的平均粒径为5μm以下。
Description
技术领域
本发明涉及以锌、铝、钛及氧为构成元素的氧化物烧结体及含有该烧结体而成的溅射靶。
背景技术
近年来,在便携型显示器及建材玻璃中,采用高折射率膜来调整折射率。高折射率靶的代表例为氧化钛靶,但其电阻值极高,存在难以高批量地进行DC溅射的问题。对于该问题,公开了通过掺杂微量的掺杂剂而使比电阻降低,可进行DC放电的技术(例如,参照专利文献1)。但是,氧化钛系的氧化物材料还存在由于钛和氧的结合强度强,所以在溅射时不容易原子化,成膜速度极其慢的问题。
另外,作为高折射率靶,也公开了由锌、铝、钛构成的复合氧化物烧结体(例如,参照专利文献2)。含有钛的氧化锌系靶在实现折射率2.0以上的高折射率的同时,能够获得很少发生击穿、具有稳定的DC放电性能的复合氧化物烧结体。
但是,近年来,采用可施加高功率负荷的圆筒靶的技术等得到发展,施加目前未曾设想的高功率的成膜正成为主流。因此,对于即使施加高功率时也不会发生击穿及靶开裂、可进行稳定的DC放电的高折射率靶的需求提高。
现有技术文献
专利文献
专利文献1:日本国特开2005-179129号公报
专利文献2:日本国特开2009-298649号公报
发明内容
发明所要解决的问题
本发明的目的在于,提供一种用于溅射靶的氧化物烧结体,其即使在高功率成膜时也能够减少异常放电现象,且不发生靶开裂。
用于解决问题的技术方案
本发明人对在ZnO中添加了TiO2的高折射率复合氧化物的击穿现象及裂纹产生的原因进行了深入研究。其结果,查明由ZnO和TiO2形成的Zn2TiO4结晶相容易引起异常晶粒成长,作为一定尺寸以上的结晶在靶内部存在时,在施加高功率时蓄积极大的电荷,引起激烈的异常放电。
另外,判明了一定尺寸以上的Zn2TiO4结晶相也会对烧结体的强度产生影响。在异常晶粒成长的Zn2TiO4结晶相的组织附近,部分晶界强度降低,使作为靶整体的强度降低,在击穿的同时成为靶开裂的原因。
基于此,本发明发现了通过抑制Zn2TiO4相的异常晶粒成长,防止施加高功率时发生击穿及靶开裂的氧化物烧结体。
即,本发明提供一种氧化物烧结体,
(1)一种氧化物烧结体,其具有锌、铝、钛及氧作为构成元素,其特征在于,在将锌、铝、钛的含量分别设为Zn、Al、Ti时,构成该烧结体的元素的原子比为:
Al/(Zn+Al+Ti)=0.035~0.050
Ti/(Zn+Al+Ti)=0.05~0.20,
该氧化物烧结体中,以Zn2TiO4结晶相为母相的晶粒的平均粒径为5μm以下。
(2)如(1)所述的氧化物烧结体,其特征在于,在所述氧化物烧结体中不存在粒径超过20μm的以Zn2TiO4结晶相为母相的晶粒。
(3)如(1)或(2)所述的氧化物烧结体,其特征在于,在所述氧化物烧结体的X射线衍射中,不存在氧化铝相的衍射峰。
(4)如(1)~(3)中任一项所述的氧化物烧结体,其特征在于,相对密度为98%以上。
(5)如(1)~(4)中任一项所述的氧化物烧结体,其特征在于,抗折强度为150MPa以上。
(6)一种溅射靶,其特征在于,使用(1)~(5)中任一项所述的氧化物烧结体作为靶材。
(7)一种薄膜,其特征在于,使用(6)所述的溅射靶利用溅射法进行成膜。
(8)一种氧化物烧结体的制造方法,其特征在于,将氧化锌粉末、氧化钛粉末及BET比表面积为10m2/g以上的氧化铝粉末作为原料粉末进行混合,使得将锌、铝、钛的含量分别设为Zn、Al、Ti时元素的原子比为
Al/(Zn+Al+Ti)=0.035~0.050
Ti/(Zn+Al+Ti)=0.05~0.20,
成形后,对所得到的成形体进行烧结。
(9)如(8)所述的氧化物烧结体的制造方法,其特征在于,在大气或非活性气体气氛下以1300℃以下的温度进行烧结。
具体实施方式
下面,详细地说明本发明。
本发明的氧化物烧结体具有锌、铝、钛及氧作为构成元素,其特征在于,在将锌、铝、钛的含量分别设为Zn、Al、Ti时,构成该烧结体的元素的原子比为:
Al/(Zn+Al+Ti)=0.035~0.050
Ti/(Zn+Al+Ti)=0.05~0.20,
该烧结体中,以Zn2TiO4结晶相为母相的晶粒的平均粒径为5μm以下。
本发明的氧化物烧结体,其特征在于,具有锌、铝及钛作为构成元素。锌是用于确保氧化物烧结体的导电性的物质,钛是用于使通过溅射得到的膜获得所希望的高折射率的物质。绝缘性高的氧化钛相与氧化锌形成复合氧化物相即Zn2TiO4相,在氧化物烧结体中不含有氧化钛相。进而,通过添加铝而提高导电性,本发明的氧化物烧结体可进行稳定的DC放电。
本发明的特征在于,在将锌、铝、钛的含量分别设为Zn、Al、Ti时,构成烧结体的元素的原子比Al/(Zn+Al+Ti)为0.035~0.050、Ti/(Zn+Al+Ti)=0.05~0.20。只要为这种组成范围,就能够抑制由氧化钛和氧化锌而形成的Zn2TiO4相的异常晶粒成长。
Al/(Zn+Al+Ti)为0.035~0.050,优选0.037~0.046。在Al/(Zn+Al+Ti)低于0.035时,难以抑制Zn2TiO4相的异常晶粒成长,在Al/(Zn+Al+Ti)超过0.050时,不能与氧化锌相固溶置换的铝会作为绝缘性氧化铝及其复合氧化物在烧结体晶界析出,烧结体的电阻率变高。
另外,Ti/(Zn+Al+Ti)为0.05~0.20,优选0.05~0.19。在Ti/(Zn+Al+Ti)低于0.05时,溅射所得的膜的折射率降低,在Ti/(Zn+Al+Ti)超过0.20时,烧结体的电阻率急剧增加,不能进行稳定的DC放电。
本发明的氧化物烧结体主要由以ZnO相为母相的晶粒、和以Zn2TiO4相为母相的晶粒构成,但是,在氧化物烧结体中,在ZnO相和Zn2TiO4相的粒径存在差别时,晶界部分的强度变得不平衡,有可能成为耐热冲击性弱的烧结体,因此,以Zn2TiO4相为母相的晶粒的平均粒径优选为5μm以下,更优选3.5μm以下。进而,更优选不存在粒径超过20μm的以Zn2TiO4结晶相为母相的晶粒,特别优选不存在粒径超过10μm的以Zn2TiO4结晶相为母相的晶粒。
另外,在本发明中,在所得的氧化物烧结体的X射线衍射中,优选不存在相当于氧化铝的衍射峰。这是因为绝缘体的氧化铝成为溅射时击穿的原因。在本发明中,通过使用BET比表面积为10m2/g以上的氧化铝粉末,能够将烧结温度设为较的低温,由于无法在ZnO相中固溶的过量氧化铝的再凝集、粒成长得到抑制,所以未出现氧化铝的X射线衍射峰。
本发明的氧化物烧结体的相对密度优选98%以上。这是因为在相对密度低于98%时,存在击穿发生的频率变高的倾向。
进而,为了进行稳定的DC放电,本发明的氧化物烧结体优选体电阻为10Ωcm以下,更优选1Ωcm以下,进一步优选0.1Ωcm以下。
另外,本发明的氧化物烧结体优选抗折强度为150MPa以上,更优选180MPa以上。如果抗折强度为150MPa以上,则即使进行抛光加工也不会发生裂纹,成品率高,因此生产性好。进而,即使在溅射中用于施加高功率的圆筒形溅射靶的情况下,也不易产生裂纹的问题。
需要说明的是,对靶施加的负荷以施加功率除以靶的刻蚀面积所得的电力密度(W/cm2)进行标准化。通常,生产中一般电力密度为1~2.5W/cm2左右,但是,在本发明中,即使在4W/cm2以上的高功率条件下,击穿的发生也极少,能够获得成为高品质的靶材料的氧化物烧结体。
本发明的氧化物烧结体的制造方法的特征在于,将氧化锌粉末、氧化钛粉末及BET比表面积为10m2/g以上的氧化铝粉末作为原料粉末进行混合,使得将锌、铝、钛的含量分别设为Zn、Al、Ti时元素的原子比为
Al/(Zn+Al+Ti)=0.035~0.050
Ti/(Zn+Al+Ti)=0.05~0.20,
成形后,对所得到的成形体进行烧结。
下面,对本发明的氧化物烧结体的制造方法中的每个工序进行说明。
(1)原料混合工序
考虑到操作性,优选原料粉末为氧化锌、氧化铝、氧化钛的各氧化物粉末。各原料粉末的纯度优选为99.9%以上,更优选为99.99%以上。在含有杂质时,会成为烧结工序的异常晶粒成长的原因,因此不优选。
对于氧化铝粉末,需要使用BET比表面积为10m2/g以上的氧化铝粉末。在使用BET比表面积低于10m2/g的氧化铝粉末时,不能抑制烧结时形成的Zn2TiO4相的激剧晶粒成长。另外,氧化铝粉末优选使用D50为0.15~0.35μm,D90为0.30μm~0.65μm的氧化铝粉末。
在原料混合工序中,将锌、铝、钛的含量分别设为Zn、Al、Ti时,需要以元素的原子比成为
Al/(Zn+Al+Ti)=0.035~0.050
Ti/(Zn+Al+Ti)=0.05~0.20
的方式将氧化锌粉末、氧化铝粉末及氧化钛粉末进行混合,
优选以成为
Al/(Zn+Al+Ti)=0.037~0.046
Ti/(Zn+Al+Ti)=0.05~0.19
的方式进行混合。
另外,为了抑制Zn2TiO4相的晶粒成长,优选原料粉末均匀地混合。为了进行均匀混合,优选粉碎混合后的混合粉的BET比表面积比作为主构成原料的氧化锌粉末的BET比表面积高1m2/g以上,更优选高2m2/g以上。混合粉的BET比表面积过高时,粉末的成形性降低,因此,优选制备为15m2/g以下。
这些各粉末的粉碎混合处理只要是可进行均匀混合的设备,就没有特别限定,但是,可例示使用了氧化锆、氧化铝、尼龙树脂等的球或珠的干式、湿式的介质搅拌型磨机及无介质的容器旋转式、机械搅拌式及气流式等粉碎混合方法。具体而言,可举出球磨机、珠磨机、超微磨碎机、振动磨机、行星磨机、喷磨机、二轴行星搅拌式混合机等。在使用湿法的球磨机及珠磨机、超微磨碎机、振动磨机、行星磨机、喷磨机等的情况下,需要干燥粉碎后的浆料。其干燥方法没有特别的限定,但是,可以例示例如过滤干燥、流动层干燥、喷雾干燥等。
(2)成形工序
成形方法可以适宜选择能够将混合的原料粉末成形为目的形状的成形方法,没有特别地限定。可以例示挤压成形法、铸造成形法、注射成形法等。
成形压力只要是在成形体上没有裂纹等发生而可进行处理的成形体就没有特别的限定,优选成形密度尽可能高。因此,也可以使用冷等静压挤压(CIP)成形等方法。为了获得充分的压密效果,优选CIP压力为1ton/cm2以上,更优选为2ton/cm2以上,特别优选为2~3ton/cm2。
(3)烧结工序
接着,将所得到的成形体用电气烧结炉等进行烧结。对于被烧结物的升温速度没有特别限定,但是,一般而言为20~600℃/小时的范围。对于降温速度也没有特别限定,可以考虑烧结炉的容量、烧结体的尺寸及形状、是否易产生裂纹等因素适当决定。烧结保持温度优选在1100~1300℃的范围进行,保持时间优选为0.5~8小时,更优选为1~5小时。在将烧结保持温度及保持时间设为该条件后,容易抑制烧结时生成的Zn2TiO4相的异常晶粒成长。作为烧结时的气氛没有特别限制,为了抑制锌的升华,优选设为大气或氧气氛。
(4)靶化工序
所得到的烧结体使用平面磨床、外圆磨床、车床、切断机、数控机床等机械加工机,抛光加工为板状、圆状、圆筒状等所希望的形状。接着,根据需要在由无氧铜、钛等构成的背板、衬管上使用铟焊锡等进行接合(焊接),由此,能够获得将本发明的氧化物烧结体作为靶材的溅射靶。
烧结体的尺寸没有特别的限定,但是,本发明的烧结体强度高,因此能够制造大型的靶。在平板形溅射靶的情况下,能够制作长310mm×宽420mm(靶面的面积1302cm2)以上的大型烧结体,在圆筒形溅射靶的情况下,能够制作外径91mmΦ×170mm(靶面面积486cm2)以上的大型的烧结体。需要说明的是,在此所说的靶面面积是指被溅射侧烧结体表面的面积。在由多个烧结体构成的多分割靶的情况下,将各烧结体中被溅射侧烧结体表面面积最大的靶面积作为多个分割靶的靶面面积。
发明的效果
本发明的氧化物烧结体具有导电性,在作为溅射靶使用的情况下,即使在可DC放电且高施加功率时,异常放电(击穿)的发生及靶的裂纹也少,所成膜的薄膜为高电阻的膜。另外,烧结体的强度高,因此易于加工,成品率高,能够制造大型的靶。
实施例
下面,通过实施例对本发明进行更具体的说明,但是,本发明不限于此。需要说明的是,本实施例的各测定如下进行。
(1)粉末的BET比表面积
粉末的BET比表面积使用比表面积测定装置(TriStar3000、岛津制作所制),用气体吸附法进行了测定。
(2)粉末的粒径测定
粉末的粒径使用粒径分布测定装置(SALD-7100、岛津制作所制),利用激光衍射散射法测定,利用体积度数分布求出了D50(50%径)和D90(90%径)。
(3)烧结体的密度
烧结体的相对密度根据JIS R 1634,通过阿基米德法测定了体积密度,将该体积密度除以真密度而求出相对密度。烧结体的真密度是将烧结体中的Zn、Ti、Al换算为氧化物,在分别制成氧化锌、氧化铝、氧化钛时,使用各自的量a(g)、b(g)、c(g)和各自的真密度5.606(g/cm3)、3.95(g/cm3)、4.23(g/cm3),由用下式表示的相加平均而算出的。
d=(a+b+c)/((a/5.606)+(b/3.95)+(c/4.23))
(4)X射线衍射试验
测定镜面抛光的烧结体试样的2θ=20~70°范围的X射线衍射图谱。
扫描方法:步进扫描法(FT法)
X射线源:CuKα
功率:40kV、40mA
步宽:0.01°
(5)晶粒直径
进行镜面抛光,通过基于EPMA的组成分析鉴定了ZnO相和Zn2TiO4相后,根据SEM像利用直径法测定了晶粒直径。观察试样任意3点以上,分别进行300个以上的粒子的测定。
(EPMA分析条件)
装置:波长分散型电子线微分析器
加速电压:15kV
照射电流:30nA
(6)抗折强度
按照JIS R 1601基准进行测定。
(抗折强度的测定条件)
试验方法:3点弯曲试验
支点间距离:30mm
试样尺寸:3mm×4mm×40mm
头速度:0.5mm/min
(7)体电阻
将所得到的烧结体加工为约10mm×20mm×1mmt,在测定探针的接触点(4点)上涂布银糊,使用粒径分布测定装置(Loresta HP MCP-T410、三菱油化社制),利用4端子法进行了测定。
(8)溅射评价
在将得到的烧结体加工为101.6mmΦ×6mmt后,在无氧铜制的背板上通过铟锡焊进行焊接而制成溅射靶。使用该靶在以下条件下改变施加功率进行溅射,并进行击穿计测及靶裂纹的观察。
(溅射条件)
气体:氩气+氧气(3%)
压力:0.6Pa
电源:DC
施加功率:400W(4.9W/cm2)
600W(7.4W/cm2)
800W(9.9W/cm2)
放电时间:各120分钟
击穿计测条件(阈电压):溅射电压-50[V]。
(实施例1)
将表1所示的粉末物性的氧化锌粉末、氧化钛粉末、氧化铝(a)的粉末按成为Al/(Zn+Al+Ti)=0.045、Ti/(Zn+Al+Ti)=0.05的比例进行称量。将所称量的粉末与加入了直径15mm的铁心的树脂制球放入聚乙烯制的罐中,通过干式球磨机进行20小时的混合。使混合后的粉末通过300μm的筛子,通过型模压制以300kg/cm2的压力制作了120mm×120mm×8mmt的成形体后,以2ton/cm2的压力进行CIP处理。
接着,将该成形体设置于氧化铝制的调节器上,在以下的条件下用电阻加热式电炉(炉内容积:250mm×250mm×250mm)进行烧结。表2示出了所得到的烧结体的评价结果,表3示出了所得到的溅射靶的溅射评价结果。
(烧结条件)
烧结温度:1100℃
保持时间:1小时
升温速度:100℃/小时
气氛:氧气流气氛(200mL/分钟)
降温速度:300℃/小时。
(实施例2)
将表1所示的粉末物性的氧化锌粉末、氧化钛粉末、氧化铝(a)的粉末以Al/(Zn+Al+Ti)=0.040、Ti/(Zn+Al+Ti)=0.10比例按与实施例1相同的条件获得了CIP处理成形体。将该成形体设置于氧化铝制的调节器上,将烧结温度变更为1200℃、将保持时间变更为3小时,除此之外,在与实施例1同样的条件下用电阻加热式的电炉进行了烧结。表2示出了所得到的烧结体的评价结果,表3示出了所得到的溅射靶的溅射评价结果。
(实施例3)
将表1所示的粉末物性的氧化锌粉末、氧化钛粉末、氧化铝(b)的粉末以Al/(Zn+Al+Ti)=0.038、Ti/(Zn+Al+Ti)=0.19的比例按与实施例1相同的条件获得了CIP处理成形体。将该成形体设置于氧化铝制的调节器上,将烧结温度变更为1300℃、将保持时间变更为5小时,除此之外,在与实施例1同样的条件下用电阻加热式的电炉进行了烧结。表2示出了所得到的烧结体的评价结果,表3示出了所得到的溅射靶的溅射评价结果。
(实施例4)
除了将干式球磨机的混合时间设为10小时之外,在与实施例3同样的条件下制作了烧结体。表2示出了所得到的烧结体的评价结果,表3示出了所得到的溅射靶的溅射评价结果。
(实施例5)
在混合粉末的制备方法中,使用下述条件的湿式珠磨机和喷雾干燥机,使所得的粉末通过150μm的筛子,除此之外,通过与实施例2相同条件获得了CIP处理成形体。将该成形体设置于氧化铝制的调节器上,将保持时间变更为1小时,除此之外,在与实施例2同样的条件下用电阻加热式的电炉进行了烧结。
(珠磨机条件)
珠径:0.3mmΦ
珠充填率:85%
周速:7m/sec
通过次数:10次
浆料浓度:粉末60wt%
(喷雾干燥机条件)
热风温度:入口180℃、出口120℃
盘转速:10000rpm
表2示出了所得到的烧结体的评价结果,表3示出了所得到的溅射靶的溅射评价结果。
(成膜评价)
使用实施例1~5中所得的溅射靶在以下条件下进行成膜,并进行了薄膜电阻的测定。薄膜电阻全部为105Ω以上的高电阻膜。
(溅射条件)
气体:氩气+氧气(3%)
压力:0.6Pa
电源:DC
施加功率:400W(4.9W/cm2)
膜厚:80nm
基板:无碱玻璃(Corning公司制EAGLE XG、厚度0.7mm)
(电阻的测定条件)
装置:Loresta HP(三菱油化社制MCP-T410)
测定方式:4端子法。
(比较例1)
将表1所示的粉末物性的氧化锌粉末、氧化钛粉末、氧化铝(a)的粉末以Al/(Zn+Al+Ti)=0.025、Ti/(Zn+Al+Ti)=0.10的比例按与实施例1相同的条件获得了CIP处理成形体。将该成形体设置于氧化铝制的调节器上,将烧结温度变更为1250℃、将保持时间变更为5小时,除此之外,在与实施例1同样的条件下用电阻加热式的电炉进行了烧结。表2示出了所得到的烧结体的评价结果,表3示出了所得到的溅射靶的溅射评价结果。
(比较例2)
将表1所示的粉末物性的氧化锌粉末、氧化钛粉末、氧化铝(a)的粉末以Al/(Zn+Al+Ti)=0.025、Ti/(Zn+Al+Ti)=0.10的比例按与实施例1相同的条件获得了CIP处理成形体。将该成形体设置于氧化铝制的调节器上,将烧结温度变更为1350℃、将保持时间变更为10小时,除此之外,在与实施例1同样的条件下用电阻加热式的电炉进行了烧结。表2示出了所得到的烧结体的评价结果,表3示出了所得到的溅射靶的溅射评价结果。
(比较例3)
将表1所示的粉末物性的氧化锌粉末、氧化钛粉末、氧化铝(c)的粉末以Al/(Zn+Al+Ti)=0.040、Ti/(Zn+Al+Ti)=0.10的比例按与实施例1相同的条件获得了CIP处理成形体。将该成形体设置于氧化铝制的调节器上,将烧结温度变更为1250℃、将保持时间变更为5小时,除此之外,在与实施例1同样的条件下用电阻加热式的电炉进行了烧结。表2示出了所得到的烧结体的评价结果,表3示出了所得到的溅射靶的溅射评价结果。
(比较例4)
将表1所示的粉末物性的氧化锌粉末、氧化钛粉末、氧化铝(c)的粉末以Al/(Zn+Al+Ti)=0.040、Ti/(Zn+Al+Ti)=0.10的比例按与实施例1相同的条件获得了CIP处理成形体。将该成形体设置于氧化铝制的调节器上,将烧结温度变更为1350℃、将保持时间变更为10小时,除此之外,在与实施例1同样的条件下用电阻加热式的电炉进行了烧结。表2示出了所得到的烧结体的评价结果,表3示出了所得到的溅射靶的溅射评价结果。
(比较例5)
将表1所示的粉末物性的氧化锌粉末、氧化钛粉末、氧化铝(a)的粉末以Al/(Zn+Al+Ti)=0.040、Ti/(Zn+Al+Ti)=0.25的比例按与实施例1相同的条件获得了CIP处理成形体。将该成形体设置于氧化铝制的调节器上,将烧结温度变更为1350℃、将保持时间变更为5小时,除此之外,在与实施例1同样的条件下用电阻加热式的电炉进行了烧结。表2示出了所得到的烧结体的评价结果。所得到的烧结体的体电阻高,因此,溅射评价未实施。
(实施例6)
代替型模压制,使用CIP成形用模具以1ton/cm2的压力制作351mm×477mm×8mmt的成形体后,以2ton/cm2的压力进行CIP处理,除此之外,按与实施例2相同的条件获得了9片CIP处理成形体。接着,将该成形体设置于氧化铝制的调节器上,在电炉(炉内容积:1500mm×1200mm×600mm)中,将氧气流量变更为120L/分钟,除此之外,在与实施例2同样的条件下用电阻加热式的电炉进行了烧结。将所得的烧结体加工为310mm×420mm×6mmt,获得了没有裂纹的9片烧结体。接着,将3片烧结体作为1组通过铟焊锡焊接在无氧铜制的背板上,获得了3根溅射靶。表2示出了所得到的烧结体的评价结果。
(实施例7)
代替型模压制,使用CIP成形用模具以2ton/cm2的压力制作内径86mm×外径116mm×长度200mm的成形体,除此之外,按与实施例2相同的条件获得了9个成形体。接着,将该成形体设置于氧化铝制的调节器上,在与实施例2同样的条件下用电阻加热式的电炉进行了烧结。将所得的烧结体加工为内径77mm×外径91×长度170mm,获得了没有裂纹的9片烧结体。接着,将3片烧结体作为1组通过铟焊锡焊接在钛制的衬管上,获得了3根溅射靶。表2示出了所得到的烧结体的评价结果。
[表1]
[表3]
详细地、并参照特定实施方式对本发明进行了说明,但本领域技术人员清楚可在不脱离本发明本质和范围的前提下进行各种各样的变更及修正。
需要说明的是,在此援引了2014年7月31日申请的日本专利出愿2014-156608号的说明书、权利要求的范围、附图及摘要的全部内容,作为本发明的说明书公开的内容。
Claims (7)
1.一种氧化物烧结体,其由锌、铝、钛及氧作为构成元素而构成,
其中,在将锌、铝、钛的含量分别设为Zn、Al、Ti时,构成该烧结体的元素的原子比为:
Al/(Zn+Al+Ti)=0.035~0.050
Ti/(Zn+Al+Ti)=0.05~0.20,
该烧结体中,以Zn2TiO4结晶相为母相的晶粒的平均粒径为5μm以下,
在所述氧化物烧结体中不存在粒径超过20μm的以Zn2TiO4结晶相为母相的晶粒,
在所述氧化物烧结体的X射线衍射中,不存在氧化铝相的衍射峰。
2.如权利要求1所述的氧化物烧结体,其相对密度为98%以上。
3.如权利要求1或2所述的氧化物烧结体,其抗折强度为150MPa以上。
4.一种溅射靶,其使用权利要求1~3中任一项所述的氧化物烧结体作为靶材。
5.一种薄膜,其是使用权利要求4所述的溅射靶通过溅射法成膜而成的。
6.权利要求1所述氧化物烧结体的制造方法,该方法包括:将氧化锌粉末、氧化钛粉末及BET比表面积为10m2/g以上的氧化铝粉末作为原料粉末以如下方式进行混合、成形后,对所得到的成形体进行烧结,
所述方式为:将锌、铝、钛的含量分别设为Zn、Al、Ti时元素的原子比为
Al/(Zn+Al+Ti)=0.035~0.050
Ti/(Zn+Al+Ti)=0.05~0.20。
7.如权利要求6所述的氧化物烧结体的制造方法,其中,在大气或非活性气体气氛下以1300℃以下的温度进行烧结。
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EP1562872A1 (fr) | 2002-11-07 | 2005-08-17 | Saint-Gobain Glass France | Systeme de couches pour substrats transparents et substrat revetu |
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KR20120129972A (ko) * | 2010-02-18 | 2012-11-28 | 각코호우징 오사카 산교 다이가쿠 | 산화물 소결체, 산화물 혼합체, 이들의 제조 방법 및 이들을 이용한 타겟 |
US9111663B2 (en) * | 2010-09-29 | 2015-08-18 | Tosoh Corporation | Sintered composite oxide, manufacturing method therefor, sputtering target, transparent conductive oxide film, and manufacturing method therefor |
JP2012106878A (ja) * | 2010-11-16 | 2012-06-07 | Sumitomo Chemical Co Ltd | 酸化亜鉛系透明導電膜形成材料の製造方法、該透明導電膜形成材料を用いたターゲット、および酸化亜鉛系透明導電膜の形成方法 |
JP2012140276A (ja) * | 2010-12-28 | 2012-07-26 | Sumitomo Chemical Co Ltd | 酸化亜鉛系透明導電膜形成材料、それを用いたターゲット、酸化亜鉛系透明導電膜の形成方法および透明導電性基板 |
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