CN106449692A - Hall integrated device and preparation method thereof - Google Patents
Hall integrated device and preparation method thereof Download PDFInfo
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- CN106449692A CN106449692A CN201610736909.2A CN201610736909A CN106449692A CN 106449692 A CN106449692 A CN 106449692A CN 201610736909 A CN201610736909 A CN 201610736909A CN 106449692 A CN106449692 A CN 106449692A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 230000003321 amplification Effects 0.000 claims abstract description 37
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 37
- 150000001875 compounds Chemical class 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 41
- 239000002346 layers by function Substances 0.000 claims description 20
- 238000005260 corrosion Methods 0.000 claims description 14
- 230000007797 corrosion Effects 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 13
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 9
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 14
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 12
- 229910052733 gallium Inorganic materials 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910000070 arsenic hydride Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention belongs to the technical field of sensing, and discloses a Hall integrated device. The Hall integrated device comprises a compound semiconductor Hall element and a signal amplifying element formed above the Hall element, wherein the signal amplifying element is used for signal amplification of the Hall element; and the signal amplifying element is a compound semiconductor homojunction transistor or a compound semiconductor heterojunction transistor. The signal amplifying element is arranged above the Hall element, the integration level is high, the influence of substrate type on the signal amplifying element is avoided, the applicable type range of the Hall element is wide, and the manufacturing cost is effectively reduced. The invention also discloses a preparation method of the Hall integrated device, and the preparation method is mature in technology and low in preparation cost.
Description
Technical field
The present invention relates to sensory field is and in particular to a kind of compound semiconductor linear Hall integrated device and its preparation side
Method.
Background technology
Hall element is a kind of Magnetic Sensor based on Hall effect, is generally used for detecting magnetic field and its change.Hall unit
The sensitivity of part is closely related with the mobility of material.In order to lift the sensitivity of Hall element further, people adopt chemical combination
Thing semiconductor substituted for silicon, obtains high sensitivity, high linearity and the high compound semiconductor Hall element of temperature stability.
At present, conventional compound semiconductor Hall element includes GaAs Hall element, indium arsenide Hall element, antimony
Indium Hall element etc., has wide market.
However, the signal of Hall element output itself is weaker, in actual applications, need to mate with rear end amplifying circuit to make
With.In order to reduce the size of Hall element product, it is developed the structure together with silicon amplifier package by Hall element.
But this mode is relatively complicated, technique does not have compatibility, and because bi-material has different temperature, pressure characteristic
Deng, in use, existence and stability and integrity problem.
At present it has been reported that Hall element be mainly with silicon amplifier integration mode：Using ion implantation technology, in arsenic
Change and form Hall element functional areas and field-effect transistor functional areas on gallium substrate, signal is carried out by field-effect transistor and puts
Greatly.However, this mode has problems in that, it is only used for manufacturing GaAs Hall device product, if be manufactured similarly to
Indium arsenide hall device product, substrate need to be replaced with indium arsenide, then cannot manufacture field-effect transistor.
Content of the invention
For this reason, to be solved by this invention is the problem that existing Hall integrator part product is single, preparation cost is high.
For solving above-mentioned technical problem, the technical solution used in the present invention is as follows：
The present invention provides a kind of Hall integrator part, including compound semiconductor Hall element and be formed at described Hall
Signal amplification component above element, the signal for described Hall element amplifies；
Described signal amplification component is compound semiconductor homogeneity junction transistors or compound semiconductor heterojunction transistor.
Alternatively, described signal amplification component is heterojunction transistor.
Alternatively, described Hall element includes substrate, functional layer and the first electrode being stacked.
Alternatively, described heterojunction transistor includes being stacked sub- collecting zone, collecting zone, base, launch site, contact
Layer and second electrode, and it is respectively formed at the 3rd electrode on described Asia collecting zone and described collecting zone and the 4th electrode.
Alternatively, described base area is less than described collecting zone area, and described 4th electrode is formed directly into described current collection
On the platform that area is formed with described base；Described collecting zone area is less than described Asia collecting zone area, and described 3rd electrode is direct
It is formed on the platform that described collecting zone is formed with described Asia collecting zone.
Alternatively, projected area on described Hall element for the described signal amplification component is close less than described Hall element
The surface area of described signal amplification component, described first electrode is formed directly into described signal amplification component and described Hall unit
On the platform that part is formed；
Also include the corrosion barrier layer being formed between described Hall element and described signal amplification component.
Alternatively, also include the lattice graded bedding that is formed between described functional layer and described corrosion barrier layer.
Alternatively, described Hall element is in GaAs Hall element, indium arsenide Hall element or indium antimonide Hall unit
One kind.
The present invention also provides the preparation method of described Hall integrator part, comprises the steps：
Form the compound structure in Hall element and signal amplification component；
Form electrode structure.
Alternatively, the described compound structure step being formed in Hall element and signal amplification component includes：
Stacked functional layer, sub- collecting zone, collecting zone, base, launch site, contact layer are sequentially formed on substrate；
Described Asia collecting zone, described collecting zone, described base, described launch site, described contact layer are patterned, shape
Become epitaxial structure pattern；
Described formation electrode structure step includes：
Described functional layer forms first electrode, second electrode is formed on described contact layer, in described Asia collecting zone
With the 3rd electrode and the 4th electrode are formed respectively on described collecting zone.
The technique scheme of the present invention has advantages below compared to existing technology：
1st, a kind of Hall integrator part described in the embodiment of the present invention, including compound semiconductor Hall element and formation
Signal amplification component above described Hall element, the signal for described Hall element amplifies；Described signal amplification component
For compound semiconductor homogeneity junction transistors or compound semiconductor heterojunction transistor.Signal amplification component is arranged on Hall unit
Above part, not only integrated level is high, sense in small space, detect beneficial to Hall integrator part, and avoids substrate species
Impact to signal amplification component, applicable Hall element category is wide, effectively reduces manufacturing cost.
2nd, preparation method, technical maturity and the processing compatibility of a kind of Hall integrator part described in the embodiment of the present invention
Height, preparation cost is low, and product yield is high.
Brief description
In order that present disclosure is more likely to be clearly understood, specific embodiment below according to the present invention simultaneously combines
Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the Hall integrator part structural representation described in the embodiment of the present invention；
Fig. 2 is the Hall integrator part epitaxial structure schematic diagram described in the embodiment of the present invention；
In figure reference is expressed as：1- substrate, 2- functional layer, 3- corrosion barrier layer, 4- Asia collecting zone, 5- collecting zone,
6- base, 7- launch site, 8- contact layer, 91- first electrode, 92- second electrode, 93- the 3rd electrode, 94- the 4th electrode.
Specific embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with the reality to the present invention for the accompanying drawing
The mode of applying is described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein.
On the contrary, provide these embodiments so that the disclosure will be thorough and complete, and the design of the present invention will be fully conveyed to
Those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, Ceng He area can be exaggerated
The size in domain and relative size.It should be appreciated that when element such as layer, region or substrate are referred to as " being formed at " or " setting
" another element " on " when, this element can be arranged directly on described another element, or can also there is intermediary element.
On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
Embodiment 1
The present embodiment provides a kind of Hall integrator part, as shown in figure 1, including compound semiconductor Hall element and shape
Become the signal amplification component above Hall element, the signal for Hall element amplifies；Also include being formed at Hall element and
Corrosion barrier layer 3 between signal amplification component；Signal amplification component is compound semiconductor homogeneity junction transistors or compound
Heterogeneous semiconductor junction transistors.
As one embodiment of the present of invention, in the present embodiment, signal amplification component is the heterogeneous crystallization of compound semiconductor
Body pipe；Sub- collecting zone 4 that heterojunction transistor includes being stacked, collecting zone 5, base 6, launch site 7, contact layer 8 and second
Electrode 92, and it is respectively formed at the 3rd electrode 93 on sub- collecting zone 4 and collecting zone 5 and the 4th electrode 94.
Specifically, sub- collecting zone 4 is gallium arsenide layer, and thickness is 500nm；Collecting zone 5 is gallium arsenide layer, and thickness is 500nm；
Base 6 is gallium arsenide layer, and thickness is 90nm；Launch site 7 is indium gallium phosphorous layer, and thickness is 50nm；Contact layer 8 is gallium arsenide layer, thick
Spend for 300nm；3rd electrode 93, the 4th electrode 94 are Mo electrode.
Base 6 area is less than collecting zone 5 area, and the 4th electrode 94 is formed directly into the platform that collecting zone 5 is formed with base 6
On；Collecting zone 5 area is less than sub- collecting zone 4 area, and the 3rd electrode 93 is formed directly into collecting zone 5 and sub- collecting zone 4 formation
On platform.
As the convertible embodiment of the present invention, signal amplification component can also be the heterogeneous crystallization of other compound semiconductors
The compound semiconductor homogeneity junction transistors such as body pipe, thin film field-effect pipe (TFT), all can realize the purpose of the present invention, belong to
Protection scope of the present invention.
As one embodiment of the present of invention, in the present embodiment, Hall element includes substrate 1, the functional layer 2 being stacked
With first electrode 91.Projected area on Hall element for the signal amplification component is less than Hall element near signal amplification component
Surface area, first electrode 91 is formed directly on the platform that signal amplification component is formed with Hall element.
Specifically, substrate 1 is gallium arsenide substrate, and functional layer 2 is gallium arsenide layer, and thickness is 1 μm.
As the convertible embodiment of the present invention, Hall element can be GaAs Hall element, indium arsenide Hall element
One of or indium antimonide Hall unit, all can realize the purpose of the present invention, belong to protection scope of the present invention.
In the present embodiment, signal amplification component is arranged on above Hall element, and not only integrated level is high, be beneficial to Hall integrator
Part senses in small space, detects, and avoids the impact to signal amplification component for the substrate species, applicable Hall element
Category is wide, effectively reduces manufacturing cost.Meanwhile, it is processed using same material, physicochemical properties are identical or phase
Seemingly, stability and the reliability of device can be effectively improved.
The preparation method of above-mentioned Hall integrator part, as shown in Fig. 2 comprise the steps：
S1, sequentially form stacked functional layer 2, corrosion barrier layer 3, sub- collecting zone 4, collecting zone 5, base on substrate 1
6th, launch site 7, contact layer 8.
The preparation method of functional layer 2 is：With arsine (AsH3) for arsenic source, trimethyl gallium (TMGa) be gallium source, silane (SiH4)
For doped source, hydrogen (H2) it is carrier gas, growth temperature is 650 DEG C, and pressure is 100mbar, and V/III ratio is 100, is grown.
The preparation method of corrosion barrier layer 3 is with phosphine (PH3) for phosphorus source, trimethyl indium (TMIn) be indium source, trimethyl
Gallium (TMGa) is gallium source, hydrogen (H2) it is carrier gas, growth temperature is 650 DEG C, and pressure is 100mbar, and V/III ratio is 100, carries out
Growth obtains indium gallium phosphorous layer.Corrosion barrier layer 3 is capable of each functional layer (Asia of Hall element functional layer 2 and signal amplification component
Collecting zone 4 etc.) separate, when signal amplification component is carried out with technique preparation, corrosion barrier layer 3 can be with effective protection Hall element
Functional layer 2, after the completion of signal amplification component technique, removes corrosion barrier layer, then the functional layer 2 of Hall element is carried out adding
Work is it is ensured that signal amplification component preparation technology and Hall element preparation technology are mutually unaffected.
The preparation method of sub- collecting zone 4 is：With arsine (AsH3) for arsenic source, trimethyl gallium (TMGa) be gallium source, silane
(SiH4) it is doped source, hydrogen (H2) it is carrier gas, growth temperature is 650 DEG C, and pressure is 100mbar, and V/III ratio is 100, carries out
Growth.
The preparation method of collecting zone 5 is：With arsine (AsH3) for arsenic source, trimethyl gallium (TMGa) be gallium source, silane (SiH4)
For doped source, hydrogen (H2) it is carrier gas, growth temperature is 650 DEG C, and pressure is 100mbar, and V/III ratio is 100, is grown.
The preparation method of base 6 is：With arsine (AsH3) for arsenic source, trimethyl gallium (TMGa) be gallium source, carbon tetrabromide
(CBr4) it is doped source, hydrogen (H2) it is carrier gas, growth temperature is 650 DEG C, and pressure is 100mbar, and V/III ratio is 100, carries out
Growth.
The preparation method of launch site 7 is：With phosphine (PH3) for phosphorus source, trimethyl indium (TMIn) be indium source, trimethyl gallium
(TMGa) it is gallium source, silane (SiH4) is doped source, hydrogen (H2) it is carrier gas, growth temperature is 650 DEG C, and pressure is 100mbar,
V/III ratio is 100, is grown.
The preparation method of contact layer 8 is：With arsine (AsH3) for arsenic source, trimethyl gallium (TMGa) be gallium source, silane (SiH4)
For doped source, hydrogen (H2) it is carrier gas, growth temperature is 650 DEG C, and pressure is 100mbar, and V/III ratio is 100, is grown.
S2, by photoetching and etching technics, base 6, launch site 7, contact layer 8 are patterned, form collecting zone 5 flat
Platform；
By photoetching and etching technics, sub- collecting zone 4, collecting zone 5 are patterned, form collecting zone 5 platform；
By selective corrosion, removing corrosion barrier layer 3, forming functional layer 2 platform, thus forming epitaxial structure pattern.
S3, in functional layer 2 formed first electrode 91, on contact layer 8 formed second electrode 92, in sub- collecting zone 4 He
3rd electrode 93 and the 4th electrode 94 are formed respectively on collecting zone 5.
The preparation method of above-mentioned Hall integrator part, also includes：
S4, connection chip internal circuits；
S5, thinning, scribing is carried out to substrate 1, pin is pulled out by gold thread routing；Carry out chip package.
All compared with technology, the present embodiment repeats no more step S4, S5.
The preparation method of above-mentioned Hall integrator part, technical maturity and same material processing compatibility are high, and preparation cost is low,
Product yield is high.
Embodiment 2
The present embodiment provides a kind of Hall integrator part, its structure and preparation method with embodiment 1, except for the difference that：Function
Layer 2 is indium arsenide layer, thickness 500nm.It is additionally provided with lattice graded bedding between functional layer 2 and corrosion barrier layer 3.
There is mismatch in the lattice due to indium arsenide and GaAs and its base material indium gallium phosphorous layer, if directly raw on indium arsenide
Gallium arsenide layer in long signal amplification component or indium gallium phosphorous layer, then device performance meeting be greatly affected because of lattice mismatch, therefore,
Add lattice graded bedding in the present embodiment, so that the lattice paprmeter of material is matched each other, effectively increase the sensitivity of device.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.Right
For those of ordinary skill in the art, can also make on the basis of the above description other multi-forms change or
Change.There is no need to be exhaustive to all of embodiment.And the obvious change thus extended out or
Change among still in protection scope of the present invention.
Claims (10)
1. a kind of Hall integrator part is it is characterised in that including compound semiconductor Hall element and being formed at described Hall
Signal amplification component above element, the signal for described Hall element amplifies；
Described signal amplification component is compound semiconductor homogeneity junction transistors or compound semiconductor heterojunction transistor.
2. Hall integrator part according to claim 1 is it is characterised in that described signal amplification component is heterogeneous crystalline solid
Pipe.
3. Hall integrator part according to claim 1 and 2 is it is characterised in that described Hall element includes being stacked
Substrate, functional layer and first electrode.
4. the Hall integrator part according to Claims 2 or 3 is it is characterised in that described heterojunction transistor includes being laminated
The sub- collecting zone of setting, collecting zone, base, launch site, contact layer and second electrode, and it is respectively formed at described Asia collecting zone
With the 3rd electrode on described collecting zone and the 4th electrode.
5. Hall integrator part according to claim 4 is it is characterised in that described base area is less than described collecting zone face
Long-pending, described 4th electrode is formed directly on the platform that described collecting zone is formed with described base；
Described collecting zone area be less than described Asia collecting zone area, described 3rd electrode be formed directly into described collecting zone with described
On the platform that sub- collecting zone is formed.
6. the Hall integrator part according to any one of claim 1-5 is it is characterised in that described signal amplification component is in institute
State projected area on Hall element and be less than the surface area near described signal amplification component for the described Hall element, described first
Electrode is formed directly on the platform that described signal amplification component is formed with described Hall element；
Also include the corrosion barrier layer being formed between described Hall element and described signal amplification component.
7. Hall integrator part according to claim 6 it is characterised in that also include be formed at described functional layer with described
Lattice graded bedding between corrosion barrier layer.
8. the Hall integrator part according to any one of claim 1-7 is it is characterised in that described Hall element is GaAs
One of Hall element, indium arsenide Hall element or indium antimonide Hall unit.
9. a kind of preparation method of the Hall integrator part described in any one of claim 1-8 is it is characterised in that include following walking
Suddenly：
Form the compound structure in Hall element and signal amplification component；
Form electrode structure.
10. Hall integrator part according to claim 9 is it is characterised in that described formation Hall element and signal amplify
Compound structure step in element includes：
Stacked functional layer, sub- collecting zone, collecting zone, base, launch site, contact layer are sequentially formed on substrate；
Described Asia collecting zone, described collecting zone, described base, described launch site, described contact layer are patterned, is formed outer
Prolong structure plan；
Described formation electrode structure step includes：
Described functional layer forms first electrode, second electrode is formed on described contact layer, in described Asia collecting zone and institute
State and the 3rd electrode and the 4th electrode are formed respectively on collecting zone.
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|---|---|---|---|---|
| CN109301062A (en) * | 2018-10-12 | 2019-02-01 | 苏州矩阵光电有限公司 | A kind of hall device and preparation method thereof of integrated amplifier part |
| CN109301062B (en) * | 2018-10-12 | 2024-04-16 | 苏州矩阵光电有限公司 | Hall device integrated with amplifying device and preparation method thereof |
| CN117594644A (en) * | 2024-01-18 | 2024-02-23 | 常州承芯半导体有限公司 | Semiconductor device and method of forming the same |
| CN117594644B (en) * | 2024-01-18 | 2024-05-28 | 常州承芯半导体有限公司 | Semiconductor device and method for forming the same |
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| CN106449692B (en) | 2018-09-11 |
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Denomination of invention: Hall integrated device and preparation method thereof Effective date of registration: 20211029 Granted publication date: 20180911 Pledgee: Bank of China Limited Zhangjiagang branch Pledgor: SUZHOU JUZHEN PHOTOELECTRIC Co.,Ltd. Registration number: Y2021980011576 |
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Date of cancellation: 20221018 Granted publication date: 20180911 Pledgee: Bank of China Limited Zhangjiagang branch Pledgor: SUZHOU JUZHEN PHOTOELECTRIC Co.,Ltd. Registration number: Y2021980011576 |