CN106409799B - Intelligent power module and its manufacturing method - Google Patents
Intelligent power module and its manufacturing method Download PDFInfo
- Publication number
- CN106409799B CN106409799B CN201611025774.5A CN201611025774A CN106409799B CN 106409799 B CN106409799 B CN 106409799B CN 201611025774 A CN201611025774 A CN 201611025774A CN 106409799 B CN106409799 B CN 106409799B
- Authority
- CN
- China
- Prior art keywords
- protrusion
- substrate
- heat dissipation
- power module
- intelligent power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 230000017525 heat dissipation Effects 0.000 claims abstract description 64
- 238000002347 injection Methods 0.000 claims abstract description 28
- 239000007924 injection Substances 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 26
- 238000007789 sealing Methods 0.000 claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 239000011889 copper foil Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000001746 injection moulding Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 7
- 230000002146 bilateral effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 33
- 230000008569 process Effects 0.000 abstract description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229910000831 Steel Inorganic materials 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 239000010959 steel Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of intelligent power module and its manufacturing methods.Intelligent power module, comprising: substrate is respectively equipped with the first protrusion and the second protrusion on the opposite two sides of substrate, is equipped with heat dissipation channel in substrate, the both ends of heat dissipation channel extend through the first protrusion and the second protrusion；Insulating layer, insulating layer are located at the upper surface of substrate；Wiring layer, wiring layer are set on the insulating layer；Multiple electronic components, multiple electronic components are located on wiring layer, are electrically connected between multiple electronic components or between electronic component and wiring layer；Multiple pins, multiple pins are located at at least one side edge of substrate, and pin is electrically connected with wiring layer；Sealing resin layer, sealing resin layer are wrapped in outside the substrate equipped with electronic component, and wherein pin and heat dissipation channel expose.Intelligent power module heat dissipation performance according to an embodiment of the present invention is more preferable, and positioning of the intelligent power module in injection mold is more accurate in the fabrication process and stablizes.
Description
Technical field
The present invention relates to integrated circuit techniques, more particularly, to a kind of intelligent power module and the system of the intelligent power module
Make method.
Background technique
Intelligent power module, i.e. IPM (Intelligent Power Module) are a kind of by power electronic technique sum aggregate
The power drive class product combined at circuit engineering.Intelligent power module is integrated in device for power switching and high-voltage driving circuit
Together, and interior the fault detection circuits such as overvoltage, overcurrent and overheat are kept.On the one hand intelligent power module receives MCU
The control signal of (Microcontroller Unit micro-control unit), driving subsequent conditioning circuit work, on the other hand by system
State detection signal sends MCU back to.Compared with traditional discrete scheme, intelligent power module is excellent with its high integration, high reliability etc.
Gesture wins increasing market, is particularly suitable for the frequency converter and various inverters of driving motor, is frequency control, metallurgy
Machinery, electric propulsion, servo-drive, a kind of desired power level electronic device of frequency-conversion domestic electric appliances.
Intelligent power module can generally work in severe operating condition, such as the outdoor unit of convertible frequency air-conditioner, the shape of high temperature and humidity
Under state, in the case where the higher and higher power density of intelligent power module integrated level is increasing, need to design increasingly thicker
Circuit substrate radiates, and does so the cost for not only increasing intelligent power module, moreover, because the increase of weight, gives
Module processing and transport bring difficulty, increase the cost and transportation cost for picking and placing the robot of module.
In addition, in the fabrication process because of existing intelligent power module, because circuit substrate is wrapped in thermohardening tree
In rouge, locating effect of the circuit substrate in die cavity is bad, and when injection molding easily causes circuit substrate and shifts in die cavity, to pin
Tensile stress is generated, so, Parameter adjustable range of the existing intelligent power module in injection molding is very narrow, if impulse force is excessive,
Circuit substrate displacement is easily caused, if impulse force is too small, it is discontented to be easy to happen module injection molding.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.For this purpose, the present invention mentions
A kind of intelligent power module out, the intelligent power module heat dissipation performance are more preferable, and intelligent power module is being infused in the fabrication process
Positioning in mould is more accurate and stablizes.
The present invention also proposes a kind of manufacturing method of intelligent power module.
The intelligent power module of embodiment according to a first aspect of the present invention, comprising: substrate, the opposite two sides of the substrate
It is respectively equipped with the first protrusion and the second protrusion on face, is equipped with heat dissipation channel, the both ends of the heat dissipation channel in the substrate
Extend through first protrusion and second protrusion；Insulating layer, the insulating layer are located at the upper surface of the substrate；
Wiring layer, the wiring layer are located on the insulating layer；Multiple electronic components, multiple electronic components are located at the wiring layer
On, it is electrically connected between multiple electronic components or between the electronic component and the wiring layer；Multiple pins, Duo Gesuo
It states pin to be located at at least one side edge of the substrate, and the pin is electrically connected with the wiring layer；Sealing resin layer, institute
It states sealing resin layer to be wrapped in outside the substrate equipped with the electronic component, wherein the pin and heat dissipation channel dew
Out.
Intelligent power module heat dissipation performance according to an embodiment of the present invention is more preferable, and intelligent power module in the fabrication process
Positioning in injection mold is more accurate and stablizes.
In some preferred embodiments, first protrusion is located on the left side of the substrate and protrudes to the left, institute
The second protrusion is stated to be located on the right side of the substrate and protrude to the right.
In some preferred embodiments, first protrusion and second protrusion are aligned in the up-down direction.
In some preferred embodiments, first protrusion and second protrusion bilateral symmetry are distributed.
In some preferred embodiments, the heat dissipation channel linearly extends, and the heat dissipation channel is through described the
The left side of one protrusion, and the heat dissipation channel runs through the right side of second protrusion.
In some preferred embodiments, the heat dissipation channel is formed by through-hole through the left side of first protrusion
Positioned at the middle part of the left side of first protrusion, the heat dissipation channel is formed through the right side of second protrusion
Through-hole be located at second protrusion right side middle part.
In some preferred embodiments, the upper surface of first protrusion and have between the upper surface of the substrate
First preset space length, the lower surface of first protrusion and between the lower surface of the substrate have the second preset space length；
The upper surface of second protrusion and between the upper surface of the substrate have third preset space length, second protrusion
Lower surface and between the lower surface of the substrate have the 4th preset space length.
In some preferred embodiments, first preset space length is equal to second preset space length, and the third is predetermined
Spacing is equal to the 4th preset space length.
In some preferred embodiments, first protrusion is multiple and arranged spaced apart, and second protrusion is
The multiple and setting that is separated from each other.
In some preferred embodiments, the heat dissipation channel is multiple, and each heat dissipation channel is respectively corresponded through one
A first protrusion and second protrusion.
The manufacturing method of intelligent power module described in embodiment according to a second aspect of the present invention, includes the following steps:
The substrate with first protrusion and second protrusion is stamped and formed out to aluminium sheet；
Setting extends through the heat dissipation channel of first protrusion and second protrusion in the substrate；
The insulating layer is set on the substrate；
The insulating layer upper surface copper foil and the copper foil is etched locally to remove the copper foil,
Form the wiring layer；
Multiple pins are made；
The electronic component and the pin are welded on the wiring layer；
Bonding metal wire is between multiple electronic components or between the electronic component and the pin to form
Electrical connection；
The substrate with the electronic component and the pin is molded, and by the pin and described is dissipated
The passage of heat is exposed, and make the upper and lower surfaces of the substrate respectively with the roof of the injection mold and bottom wall respectively every
It opens；
It tests to complete the manufacture of the intelligent power module.
Above-mentioned manufacturing method according to the present invention can be such that existing process is optimized, it is ensured that intelligent power module
Positioning in injection mold is more accurate.And by intelligent power module manufactured by this manufacturing method, due to upper and lower
Surface is wrapped up by sealing resin layer, therefore the insulation effect of intelligent power module is more preferable.
Additional aspect and advantage of the invention will be set forth in part in the description, and will partially become from the following description
Obviously, or practice through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 is the outline drawing of intelligent power module according to an embodiment of the present invention；
Fig. 2 be according in Fig. 1 along the cross-sectional view of X-X ' line；
Fig. 3 is that intelligent power module according to an embodiment of the present invention removes the top view after sealing resin；
Fig. 4 is the process chart that insulating layer and wiring layer are arranged on substrate；
Fig. 5 is in Fig. 4 along the side view in the direction of arrow P；
Fig. 6 is the structural schematic diagram of the pin of intelligent power module according to an embodiment of the present invention；
Fig. 7 is the process chart that electronic component and pin are welded on wiring layer；
Fig. 8 is in Fig. 7 along the side view in the direction of arrow Q；
Fig. 9 be between multiple electronic components or between electronic component and pin bonding metal wire to form electrical connection
Process chart；
Figure 10 is the process chart being molded to the substrate with electronic component and pin；
Figure 11 is the process flow chart of the manufacturing method of intelligent power module according to an embodiment of the present invention.
Appended drawing reference:
Intelligent power module 100；
Substrate 1；First protrusion 11；Second protrusion 12；
Insulating layer 2；
Wiring layer 3；Pad 31；
Electronic component 4；Heat dissipation channel 5；Pin 6；Sealing resin layer 7；Metal wire 8；
Injection mold 9；Cast gate 91；Exhaust outlet 92；Fixed device 93；
Steel mesh 10；Carrier 101.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " on ", "lower", "front", "rear", "left", "right", "top",
The orientation or positional relationship of the instructions such as "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, merely to just
In description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with
Specific orientation construction and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used
In description purpose, it is not understood to indicate or imply relative importance or implicitly indicates the number of indicated technical characteristic
Amount." first " is defined as a result, the feature of " second " can explicitly or implicitly include one or more of the features.
In the description of the present invention, the meaning of " plurality " is two or more, unless otherwise specifically defined.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be to be connected directly, connection inside two elements or two elements can also be can be indirectly connected through an intermediary
Interaction relationship.For the ordinary skill in the art, above-mentioned term can be understood in this hair as the case may be
Concrete meaning in bright.
Intelligent power module 100 according to an embodiment of the present invention is described below with reference to Fig. 1-Fig. 3.
As shown in Figure 1-Figure 3, intelligent power module 100 according to an embodiment of the present invention includes: substrate 1, insulating layer 2, cloth
Line layer 3, multiple electronic components 4, multiple pins 6 and sealing resin layer 7.
It is respectively equipped with the first protrusion 11 and the second protrusion 12 on the opposite two sides of substrate 1, is equipped with and dissipates in substrate 1
The passage of heat 5, the both ends of heat dissipation channel 5 extend through the first protrusion 11 and the second protrusion 12.Insulating layer 2 is located at substrate 1
Upper surface, wiring layer 3 are located on insulating layer 2.Multiple electronic components 4 are located on wiring layer 3, between multiple electronic components 4 or
It is electrically connected between electronic component 4 and insulating layer 2, multiple pins 6 are located at at least one side edge of substrate 1, and pin 6 and wiring
Layer 3 is electrically connected.Sealing resin layer 7 is wrapped in outside the substrate 1 equipped with electronic component 4, and wherein pin 6 and heat dissipation channel 5 expose.
As shown in Figure 1-Figure 3, substrate 1 has certain thickness, and " the opposite two sides of substrate 1 " can be substrate 1
Front surface and rear surface are also possible to the left side and right side of substrate 1.That is, the first protrusion 11 can be located at base
The front surface of plate 1, the second protrusion 12 is then arranged in the rear surface of substrate 1 at this time；Similarly, if the setting of the first protrusion 11 exists
On the left side of substrate 1, the second protrusion 12 is then arranged on the right side of substrate 1 at this time.
Heat dissipation channel 5 is equipped in substrate 1, extending direction, length etc. of the heat dissipation channel 5 in substrate 1 can be arbitrarily
, when which finishes and work normally for the manufacture of later period intelligent power module 100, it can use the heat dissipation channel 5
Air-cooled, water cooling is carried out to substrate 1, the oil modes such as cold carry out auxiliary heat dissipation.It is possible thereby to improve the heat dissipation of intelligent power module 100
Performance, therefore intelligent power module according to an embodiment of the present invention 100 can be guaranteeing in the case where not increasing by 1 thickness of substrate
It remains to obtain good thermal diffusivity.
In addition, by the way that the first protrusion 11 and the second protrusion 12 is respectively set on opposite two side in substrate 1,
It is to when being sealed the injection molding of resin to substrate 1, can use the first protrusion 11 and the second protrusion 12 auxiliary base
Positioning of the plate 1 in injection mold 9, it is accurate that positioning is more shown in, and can guarantee that substrate 1 will not move in mold in injection moulding process
Position, thereby may be ensured that pin 6 not will receive additional tensile stress, and then injection molding effect can be made more preferable, will not generate note
The problems such as modeling is discontented.
100 heat dissipation performance of intelligent power module according to an embodiment of the present invention is more preferable, and intelligent power in the fabrication process
Positioning of the module 100 in injection mold 9 is more accurate and stablizes.
Intelligent power module 100 according to an embodiment of the present invention is described in detail below with reference to Fig. 1-Fig. 3.
In one embodiment of the invention, substrate 1 can be the rectangular slab being made of the aluminium of the materials such as 1050,5052
Material.There are two ways to forming the insulation of substrate 1 and wiring on the surface of substrate 1: a method is at least one to aluminum substrate 1
A surface carries out corrosion protection processing；Another method is to be formed after insulating layer 2 at least one surface of substrate 1 again in insulating layer
2 circuit forming surface wiring, to constitute wiring layer 3.
In a preferable example of the invention, insulating layer 2 covers at least one surface of substrate 1 and is formed, such as substrate 1
Upper surface, and the fillers such as high concentration filling aluminium oxide improve thermal conductivity in the resin materials such as epoxy resin.
As shown in figure 3, the first protrusion 11 is located on the left side of substrate 1 and protrudes to the left, the second protrusion 12 is located at
It protrudes on the right side of substrate 1 and to the right.Thus when being molded to intelligent power module 100, the first protrusion 11 is only supported
On the left side of injection mold 9, the second protrusion 12 is only against on the right side of injection mold 9, can guarantee to seal in this way
Resin may not flow into heat dissipation channel 5, and can guarantee the positioning of substrate 1 in injection mold 9 in left-right direction in this way
Stability.
In one embodiment of the invention, the first protrusion 11 and the second protrusion 12 are symmetrically distributed, i.e., and first
Protrusion 11 and the second protrusion 12 are symmetrical in the lateral direction, it is therefore to be understood that the first protrusion 11 and
Two protrusions 12 are arranged in the longitudinal direction at the left side of substrate 1 and the same position of right side, and the first protrusion
11 projection of shape and size in the horizontal plane is identical with the second protrusion 12 projection of shape in the horizontal plane and size
's.The shape of substrate 1 can be made more symmetrical in this way, be positioned in injection mold 9 more stable.
In another embodiment of the present invention, the first protrusion 11 and the second protrusion 12 are aligned in the up-down direction,
That is, in above-below direction, the first protrusion 11 is set on right side in the position that left side is arranged with the second protrusion 12
The position set is identical, and the first protrusion 11 and the second protrusion 12 are located in the same horizontal plane.First protrusion 11 and as a result,
The forming position of two protrusions 12 on substrate 1 is more symmetrical, it is possible thereby to further guarantee substrate 1 in injection mold 9
In position stability in left-right direction.
In one embodiment of the invention, heat dissipation channel 5 linearly extends, and heat dissipation channel 5 is through the first protrusion
The left side in portion 11, and heat dissipation channel 5 runs through the right side of the second protrusion 12.That is, in the floor projection of substrate 1
On, the extending direction of heat dissipation channel 5 is rectilinear form, and the left side of the first protrusion 11 is run through in the left end of heat dissipation channel 5,
The right end of heat dissipation channel 5 runs through the right side of the second protrusion 12.Thus the left end of heat dissipation channel 5 and right end linearly penetrate through knot
Structure, no matter be thus passed through gas or liquid in heat dissipation channel 5, fluidised form is more stable, and good heat dissipation effect.In addition,
The heat dissipation channel 5 of straight line is molded on substrate 1, moulding process can be easier.
From the above mentioned, it due to 12 bilateral symmetry of the first protrusion 11 and the second protrusion, and is aligned in the up-down direction, and
And heat dissipation channel 5 extends straight, it is therefore preferred that heat dissipation channel 5 through the first protrusion 11 left side be formed by it is logical
Hole is located at the middle part of the left side of the first protrusion 11, and heat dissipation channel 5 is formed by logical through the right side of the second protrusion 12
Hole is located at the middle part of the right side of the second protrusion 12.Thus, it is possible to make the intensity of the first protrusion 11 and the second protrusion 12
It is more uniform, and the structure of intelligent power module 100 can be made more reasonable.
In one embodiment of the invention, as shown in Fig. 2, the upper surface of the first protrusion 11 and the upper table with substrate 1
Have second to make a reservation for the first preset space length, the lower surface of the first protrusion 11 and between the lower surface of substrate 1 between face
Spacing；The upper surface of second protrusion 12 and between the upper surface of substrate 1 have third preset space length, the second protrusion 12
Lower surface and between the lower surface of substrate 1 have the 4th preset space length.That is, the first protrusion 11 and substrate 1 is upper
Gap is all had between surface and lower surface, all has gap between the second protrusion 12 and the upper and lower surfaces of substrate 1.
A certain distance is also all had between upper and lower surfaces of first heat dissipation channel 5 apart from substrate 1 as a result, can be made in this way
Heat dissipation channel 5 reaches unanimity to the heat dissipation effect of the upper and lower surfaces of substrate 1.
Further, since the first protrusion 11 and the second protrusion 12 have between the upper and lower surfaces of substrate 1
Predetermined gap, thus above-mentioned substrate 1 is put into injection mold 9 be molded when, can use the first protrusion 11
When positioning in injection mold 9 with the second protrusion 12, substrate 1 is raised into a certain distance, so as to so that substrate 1 upper table
Face and lower surface are wrapped up by sealing resin layer 7, so as to so that the insulating properties of intelligent power module 100 is more preferable.
Preferably, the first preset space length is equal to the second preset space length, and third preset space length is equal to the 4th preset space length.Also
It is to say, in the up-down direction, the first protrusion 11 is located at the middle part of substrate 1, and the second protrusion 12 also is located at the middle part of substrate 1.
Positioning of the substrate 1 in injection mold 9 not only can be made more stable, and correspondingly, heat dissipation channel 5 is in above-below direction
On also be located at the middle part of substrate 1, such heat dissipation effect is more uniform.
In an embodiment of the present invention, shown in Fig. 2 and Fig. 3, the first protrusion 11 be it is multiple and arranged spaced apart, second is convex
Portion 12 is the multiple and setting that is separated from each other out.Specifically, the first protrusion 11 is multiple and in substrate 1 left end face intervals
Arrangement is opened, the second protrusion 12 is multiple and in substrate 1 right side arranged for interval.Thus, it is possible to make substrate 1 in injection mold
Positioning in 9 is more stable.
Preferably, heat dissipation channel 5 is multiple, and each heat dissipation channel 5 is respectively corresponded through first protrusion 11 and one
A second protrusion 12.It is possible thereby to multiple heat dissipation channels 5 be arranged, in substrate 1 so as to improve subsequent intelligent power mould
The heat dissipation effect of block 100.
The manufacturing method of intelligent power module 100 according to an embodiment of the present invention is described below with reference to Fig. 4-Figure 11.
As shown in Fig. 4-Figure 11, the manufacturing method of intelligent power module 100 includes the following steps:
The substrate with the first protrusion and the second protrusion is stamped and formed out to aluminium sheet；
Setting extends through the heat dissipation channel of the first protrusion and the second protrusion in substrate；
Insulating layer is set on substrate；
Insulating layer upper surface copper foil and copper foil is etched locally to remove copper foil, form wiring layer；
Multiple pins are made；
Electronic component and pin are welded on wiring layer；
Bonding metal wire is between multiple electronic components or between electronic component and pin to form electrical connection；
Substrate with electronic component and pin is molded, and pin and heat dissipation channel are exposed；
It tests to complete the manufacture of intelligent power module.
It is understood that above-mentioned step sequence can carry out rationally under the premise of not violating actual manufacture logic
Tissue and sequence.Such as after forming to substrate 1,6 structure of pin can also be manufactured.
Above-mentioned step is explained in detail below with reference to the accompanying drawings:
As Fig. 4 and Fig. 5 show the process chart of setting insulating layer 2 and wiring layer 3 on substrate 1.
It needs for aluminium sheet to be stamped and formed out sizeable size before this, to constitute substrate 1, and on substrate 1 one
Body is stamped and formed out out the first protrusion 11 and the second protrusion 12, it is possible thereby to make substrate 1, the first protrusion 11 and the second protrusion
Portion 12 is integrally formed, and structural strength is guaranteed, and the simple process manufactured is convenient and rapid.
Specifically, can aluminium sheet directly to 1m × 1m carry out punching press, and make the left and right of substrate 1 during formation
Both sides have the first protrusion 11 and the second protrusion 12.And by modes such as milling cutters, make the first protrusion 11 and the second protrusion
The top in portion 12 is formed at a distance from 1~4mm between the upper and lower surface of substrate 1 respectively.It, will be opposite and then by modes such as drillings
The first protrusion 11, inside the second protrusion 12 and substrate 1 between the first protrusion 11 and the second protrusion 12
It is got through, to form heat dissipation channel 5.Finally by the mode of cleaning, aluminium skimmings are cleared up.
As shown in Figure 4 and Figure 5, the sizeable substrate 1 of circuit layout design as needed, for general intelligent function
Rate module 100, one piece of size can choose 64mm × 30mm, in order to increase hardness and insulating properties, it is contemplated that the two sides of substrate 1
Carry out corrosion protection processing.In an example of the invention, (such as the substrate of insulating layer 2 is equipped at least one surface of substrate 1
1 upper surface).And then have the copper foil as wiring in the surface mount of insulating layer 2, then the copper foil is etched,
Copper foil is locally removed, to form wiring layer 3, wiring layer 3 can specifically include wiring, pad 31 and pad 31 and connect
Line.
As Fig. 6 shows the structural schematic diagram of pin 6.Optionally, each pin 6 can use Copper base material, and length is made
25mm, width 1.5mm, with a thickness of the strip of 1mm, as shown in Figure 6.Here, one end suppresses wherein for convenient for assembly
Certain radian.
Then nickel layer is formed by the method for chemical plating: by nickel salt and sodium hypophosphite mixed solution, and be added to suitable
When complexing agent, formed specific shape copper material surface formed nickel layer, metallic nickel have very strong passivation ability, can rapidly
One layer of very thin passivating film is generated, the corrosion of atmosphere, alkali and certain acid can be resisted.Nickel plating crystallization is superfine small, and nickel layer thickness is general
It is 0.1 μm.
Then by hydrosulphate technique, at room temperature by the copper material for having formed shape and nickel layer be immersed in positive tin from
It is powered in the plating solution of son, forms nickeltin layer on nickel layer surface, nickeltin thickness degree general control is at 5 μm, nickeltin
The formation of layer greatly improves the safety and solderability of pin 6.This is arrived, the manufacture of pin 6 is completed.
As Fig. 7 and Fig. 8 show the process chart of welding electronic component 4 and pin 6 on wiring layer 3.
It is possible, firstly, to pass through stencil printer and utilize steel mesh 10, tin is carried out in the specific position of the wiring layer 3 of substrate 1
The thickness of 0.13mm can be used in cream coating, steel mesh 10.
Secondly, carrying out the installation of electronic component 4 and pin 6 referring to Fig. 7 and Fig. 8, electronic component 4 can be directly placed at cloth
The specific position of line layer 3, and then one end will be placed on pad 31 pin 6, the other end needs carrier 101 to be positioned, carrier
101 can be made up of materials such as compound stones.Then, then by the methods of Reflow Soldering, solidify tin cream, thus electronic component 4
It is fixed with pin 6.
If Fig. 9 is shown, between multiple electronic components 4 or between electronic component 4 and pin 6 bonding metal wire 8 with
Form the process chart of electrical connection.
It before carrying out bonding, needs to clean substrate 1, substrate 1 is put into cleaning machine cleans first, will return
The foreign matters such as the scaling powders such as remaining rosin and when punching press remaining aluminum steel are cleaned when fluid welding, according to electronic component 4 in wiring
Arrangement density, cleaning can carry out by way of spray or ultrasound or both combine.When cleaning, two are clamped by mechanical arm
Or a plurality of pin 6, substrate 1 is placed in rinse bath, thus between multiple pins 6 independently of one another, no reinforcing rib is connected with each other,
Even if mechanical arm is uneven to the clamping force of each pin 6, the vibration in cleaning process will not generate power biography between pin 6
It passs, part pin 6 is caused to separate with pad 31.
Secondly, passing through the bonding between electronic component 4 and electronic component 4, electronic component 4 and the specific position of wiring
The metal wire 8 of certain diameter to form the electrical connection between multiple electronic components 4, or forms electronic component 4 and wiring layer
Electrical connection between 3.Here, the thickness of metal wire 8 should according to the size of binding point, required cocurrent flow ability, component can
Processability etc. comprehensively considers, and generally, the diameter of single-wire 8 should not exceed 400 μm and no less than 15 μm, for power
The connection of device, it is contemplated that using more 400 μm of aluminum steel parallel connection bonding, the connection for function element, it is contemplated that using single
The aluminum steel that 38 μm of root carries out bonding.
As Figure 10 shows the process chart being molded to the substrate 1 with electronic component 4 and pin 6.Figure 10 is indicated, is made
With injection mold 9, and the sectional view of the process using sealing resin hermetic sealing substrate 1.
Firstly, need to toast substrate 1 in oxygen-free environment to dry remaining moisture possible in substrate 1,
Baking time is no less than 2 hours, 125 DEG C of baking temperature and selection.
The substrate 1 for having configured electronic component 4 and pin 6 is transported in injection mold 9, by the particular portion for making pin 6
Divide and contacted with the fixation device 93 on injection mold 9, to carry out preliminary positioning to substrate 1.
Wherein, the distance between the first protrusion 11 and the second protrusion 12 are just convex with the equivalent width of die cavity, first
The aperture of portion 11 and the second protrusion 12 will not be into glue in molding out, and utilizes the first protrusion 11 and the second protrusion 12
Fix the left and right in die cavity of substrate 1.
Also, makes carrying out injection molding to substrate 1, make the upper and lower surfaces of substrate 1 roof with injection mold 9 respectively
Be spaced one from bottom wall, thus by sealing resin from cast gate 91 injection after, sealing resin can flow to substrate 1 upper surface and
Between the roof of injection mold 9, sealing resin can also be flowed between the lower surface of substrate 1 and the bottom wall of injection mold 9, this
Sample, the upper and lower surfaces of substrate 1 can wrap sealing resin layer 7, it is possible thereby to make intelligent power mould after molding
Block 100 has better insulating properties.
When molding, substrate 1 is placed in die cavity, and sealing resin is then injected by cast gate 91.The method being sealed can adopt
It is moulded with the transmitting mould molding of thermosetting resin or using the injection mould of thermosetting resin.Moreover, what correspondence was injected from cast gate 91
The gas of sealing resin mold cavity is externally discharged by exhaust outlet 92.
Finally, being the process for carrying out the molding of pin 6 and functions of modules test, intelligent power module 100 is made through thus process
For product completion.In this process, a setting is bent into according to the length and shape needs of pin 6 used, such as by pin 6
Shape is convenient for subsequent assembly.Then conventional electric parameters testing is carried out, insulation pressure resistance, quiescent dissipation, delay time etc. are generally comprised
Test item, test passes person are finished product.
By above-mentioned operation, intelligent power module 100 shown in FIG. 1 is completed.
Above-mentioned manufacturing method according to the present invention can be such that existing process is optimized, it is ensured that intelligent power module
100 positioning in injection mold 9 is more accurate.And pass through intelligent power module 100 manufactured by this manufacturing method, by
It is wrapped up by sealing resin layer 7 in upper and lower surface, therefore the insulation effect of intelligent power module 100 is more preferable.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ",
The description of " example ", " specific example " or " some examples " etc. means specific features described in conjunction with this embodiment or example, knot
Structure, material or feature are included at least one embodiment or example of the invention.In the present specification, to above-mentioned term
Schematic representation may not refer to the same embodiment or example.Moreover, specific features, structure, material or the spy of description
Point can be combined in any suitable manner in any one or more of the embodiments or examples.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: not
A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle of the present invention and objective, this
The range of invention is defined by the claims and their equivalents.
Claims (10)
1. a kind of intelligent power module characterized by comprising
Substrate is respectively equipped with the first protrusion and the second protrusion on the opposite two sides of the substrate, sets in the substrate
There is a heat dissipation channel, the both ends of the heat dissipation channel extend through first protrusion and second protrusion, and described first
Protrusion is located on the left side of the substrate and protrudes to the left, second protrusion be located on the right side of the substrate and
It protrudes to the right；
Insulating layer, the insulating layer are located at the upper surface of the substrate；
Wiring layer, the wiring layer are located on the insulating layer；
Multiple electronic components, multiple electronic components are located on the wiring layer, between multiple electronic components or institute
It states and is electrically connected between electronic component and the wiring layer；
Multiple pins, multiple pins are located at at least one side edge of the substrate, and the pin and the wiring layer
Electrical connection；
Sealing resin layer, the sealing resin layer are wrapped in outside the substrate equipped with the electronic component, wherein described draw
Foot and the heat dissipation channel expose, and the sealing resin layer injection molding is formed in the substrate equipped with the electronic component and pin
Outside, first protrusion are only against on the left side of injection mold, and second protrusion is only against the injection mold
Right side on.
2. intelligent power module according to claim 1, which is characterized in that first protrusion and second protrusion
Portion is aligned in the up-down direction.
3. intelligent power module according to claim 1, which is characterized in that first protrusion and second protrusion
Portion's bilateral symmetry is distributed.
4. intelligent power module according to claim 1, which is characterized in that the heat dissipation channel linearly extends,
The heat dissipation channel runs through the left side of first protrusion, and the heat dissipation channel runs through the right side of second protrusion
Side.
5. intelligent power module according to claim 4, which is characterized in that the heat dissipation channel is through first protrusion
The left side in portion is formed by the middle part that through-hole is located at the left side of first protrusion, and the heat dissipation channel is through described the
The right side of two protrusions is formed by the middle part that through-hole is located at the right side of second protrusion.
6. intelligent power module according to claim 1, which is characterized in that the upper surface of first protrusion and with institute
Stating has the first preset space length, the lower surface of first protrusion and the lower surface with the substrate between the upper surface of substrate
Between have the second preset space length；
The upper surface of second protrusion and between the upper surface of the substrate have third preset space length, described second is convex
Out the lower surface in portion and between the lower surface of the substrate have the 4th preset space length.
7. intelligent power module according to claim 6, which is characterized in that first preset space length is equal to described second
Preset space length, the third preset space length are equal to the 4th preset space length.
8. intelligent power module according to claim 1, which is characterized in that first protrusion is multiple and spaced apart
Arrangement, second protrusion are the multiple and setting that is separated from each other.
9. intelligent power module according to claim 8, which is characterized in that the heat dissipation channel be it is multiple, it is each described
Heat dissipation channel is respectively corresponded through first protrusion and second protrusion.
10. a kind of manufacturing method of intelligent power module according to claim 1 to 9, which is characterized in that packet
Include following steps:
The substrate with first protrusion and second protrusion is stamped and formed out to aluminium sheet；
Setting extends through the heat dissipation channel of first protrusion and second protrusion in the substrate；
The insulating layer is set on the substrate；
The insulating layer upper surface copper foil and the copper foil is etched locally to remove the copper foil, formed
The wiring layer；
Multiple pins are made；
The electronic component and the pin are welded on the wiring layer；
Bonding metal wire is electrically connected between multiple electronic components or between the electronic component and the pin with being formed
It connects；
The substrate with the electronic component and the pin is molded, and the pin and the heat dissipation is logical
Road exposes, and is spaced one from the upper and lower surfaces of the substrate with the roof of the injection mold and bottom wall respectively；
It tests to complete the manufacture of the intelligent power module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611025774.5A CN106409799B (en) | 2016-11-15 | 2016-11-15 | Intelligent power module and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611025774.5A CN106409799B (en) | 2016-11-15 | 2016-11-15 | Intelligent power module and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106409799A CN106409799A (en) | 2017-02-15 |
| CN106409799B true CN106409799B (en) | 2019-04-30 |
Family
ID=58069087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611025774.5A Expired - Fee Related CN106409799B (en) | 2016-11-15 | 2016-11-15 | Intelligent power module and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106409799B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114899161A (en) * | 2022-05-10 | 2022-08-12 | 广东汇芯半导体有限公司 | Module and manufacturing method thereof |
| CN115084058B (en) * | 2022-08-16 | 2022-11-11 | 杭州飞仕得科技有限公司 | Power semiconductor device packaging structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543976A (en) * | 2010-12-31 | 2012-07-04 | 昆山旭扬电子材料有限公司 | Light-emitting diode heat-radiating module |
| CN104112730A (en) * | 2013-06-09 | 2014-10-22 | 广东美的制冷设备有限公司 | Intelligent power module and manufacturing method thereof |
| CN206628464U (en) * | 2016-11-15 | 2017-11-10 | 广东美的制冷设备有限公司 | Spm |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101321282B1 (en) * | 2011-06-17 | 2013-10-28 | 삼성전기주식회사 | Power module package and system module having the same |
-
2016
- 2016-11-15 CN CN201611025774.5A patent/CN106409799B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543976A (en) * | 2010-12-31 | 2012-07-04 | 昆山旭扬电子材料有限公司 | Light-emitting diode heat-radiating module |
| CN104112730A (en) * | 2013-06-09 | 2014-10-22 | 广东美的制冷设备有限公司 | Intelligent power module and manufacturing method thereof |
| CN206628464U (en) * | 2016-11-15 | 2017-11-10 | 广东美的制冷设备有限公司 | Spm |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106409799A (en) | 2017-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104112719B (en) | Hybrid integrated circuit module and manufacturing method thereof | |
| CN104112730A (en) | Intelligent power module and manufacturing method thereof | |
| CN106601691A (en) | Intelligent power module, intelligent power module preparation method, and power electronic equipment | |
| CN106024651A (en) | Intelligent power module and manufacturing method thereof | |
| CN106409799B (en) | Intelligent power module and its manufacturing method | |
| CN106505057B (en) | Intelligent power module and its manufacturing method | |
| WO2018018847A1 (en) | Intelligent power module and method for manufacturing same | |
| CN206116377U (en) | Intelligent power module | |
| CN107706160A (en) | SPM and its manufacture method | |
| CN106298698A (en) | A kind of SPM and manufacture method thereof | |
| CN106098652A (en) | A kind of SPM and manufacture method thereof | |
| CN104752373B (en) | intelligent power module and its manufacturing method | |
| CN104767396B (en) | SPM and its manufacture method | |
| CN106024652A (en) | Intelligent power module and manufacturing method thereof | |
| CN206628464U (en) | Spm | |
| CN106409800A (en) | Intelligent power module and manufacturing method thereof | |
| CN204559407U (en) | Intelligent power module | |
| CN206497888U (en) | SPM and power electronic equipment | |
| CN206516621U (en) | Spm | |
| CN204558448U (en) | Intelligent power module | |
| CN107293523A (en) | A kind of SPM and its manufacture method | |
| CN203481218U (en) | Intelligent power module | |
| CN106409747A (en) | Intelligent power module and manufacture method thereof | |
| CN207458932U (en) | Intelligent power module | |
| CN206163476U (en) | Intelligent power module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190430 |