CN106024651A - Intelligent power module and manufacturing method thereof - Google Patents
Intelligent power module and manufacturing method thereof Download PDFInfo
- Publication number
- CN106024651A CN106024651A CN201610616058.8A CN201610616058A CN106024651A CN 106024651 A CN106024651 A CN 106024651A CN 201610616058 A CN201610616058 A CN 201610616058A CN 106024651 A CN106024651 A CN 106024651A
- Authority
- CN
- China
- Prior art keywords
- wiring layer
- circuit
- spm
- pin
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The invention relates to an intelligent power module and a manufacturing method thereof. The intelligent power module comprises a circuit wiring layer, a circuit element, a radiator and a sealing layer. The circuit wiring layer serves as a carrier and is provided with an upper surface and a lower surface opposite to the upper surface. The circuit element is welded to a preset position on the upper surface of the circuit wiring layer in a reverse covering mode. The radiator is surface-mounted on a power element in the circuit element. The sealing layer covers the upper surface of the circuit wiring layer and the circuit element and makes part surface of the radiator exposed. No metal substrate is needed any more, a bottom plate capable of being used repeatedly is used for fixing the circuit wiring layer for processing, resin is used for final fixation, no metal binding wire is needed any more, and thus cost is reduced; the circuit wiring back side and a cooling fin are completely exposed out of the resin, and thus the cooling effect is improved to the maximum; circuit wiring gaps are completely exposed, and thus moisture is not likely to attach; besides, even external moisture invades inwards, corrosion is not likely to form as no metal wire exists.
Description
Technical field
The invention belongs to electronic device manufacturing process field, particularly relate to a kind of SPM and manufacture thereof
Method.
Background technology
SPM (Intelligent Power Module, IPM) is a kind of by power electronics with integrated
The power drive series products that circuit engineering combines.IPM is integrated in device for power switching and high-voltage driving circuit
Together, and in keep overvoltage, overcurrent and the failure detector circuit such as overheated.IPM mono-aspect receives MCU
Control signal, on the other hand drive subsequent conditioning circuit work, send the state detection signal of system back to MCU.
Compared with traditional discrete scheme, IPM wins increasing city with its advantage such as high integration, high reliability
, it is particularly suitable for driving the converter of motor and various inverter, is frequency control, metallurgical machinery,
Electric propulsion, servo-drive, a kind of desired power level electronic device of frequency-conversion domestic electric appliances.
SPM typically can be operated in severe operating mode, and such as the off-premises station of convertible frequency air-conditioner, high temperature is high
Under wet state, high temperature can make SPM internal temperature raise, for existing SPM quilt
The structure that described sealing resin fully seals, internal being very easy to of SPM produces heat localization, high humidity
The gap that aqueous vapor can be made to pass through between described sealing resin and pin enters the inside electricity of described SPM
Road, the high temperature within described SPM makes ion, and particularly chloride ion and bromide ion are at the work of aqueous vapor
Migrate with lower, metal wire produced corrosion, this corrosion tend to occur at metal wire and component or
Metal wire and the joint portion of described wiring, cause open circuit, SPM constituted fatal damages,
Can make SPM that explosion accident out of control occurs time serious, be applied to environment structure infringement, cause weight
Big economic loss.
It addition, SPM has the device of different capacity, for the device of different capacity, metal wire
Material and thickness are different, add the difficulty of processing of SPM, buy different nation's line equipment
Also add processing cost, and, the combination of multiple nation Wiring technology makes the manufacture of described SPM straight
Passband step-down, produces yield and is difficult to improve.The cost ultimately resulting in described SPM remains high,
Have impact on the popularization and application of SPM.
Summary of the invention
Present invention seek to address that the deficiencies in the prior art, it is provided that the SPM of a kind of high reliability and suitable
Should the process flow of this kind of structure as manufacture method, can have the more good contact can ensureing SPM
By reducing the cost of SPM while property.
The present invention is achieved in that a kind of SPM, including:
As the circuit-wiring layer of carrier, described circuit-wiring layer has upper surface and relative with this upper surface
Lower surface；
Back-off is also welded in the component in upper surface precalculated position of described circuit-wiring layer；
The radiator of the power component being mounted in described component；And
Cover the upper surface of described circuit-wiring layer and described component, and make described heat sink part surface
Exposed sealant.
Further, also include that pin, described circuit-wiring layer include by antermarginal pin pad, described
Pin is connected with described pin pad and extends outside described wiring.
Further, described pin surface is coated with coating.
Further, described power component is Planar power device.
Further, described radiator is fin.
Further, described sealant is resin bed.
Above-mentioned SPM provides the benefit that: be no longer necessary to metal basal board, by repeatable utilization
Base plate permanent circuit wiring layer is processed, and is finally fixed by resin, it is no longer necessary to metal bonding line,
Provide cost savings, the wiring back side and fin are completely exposed outside resin, improve to greatest extent and dissipate
Thermal effect, the gap between wiring is completely exposed, and dampness is difficult to adhere to, and, even if in outside moisture
Invading, because the most there is not metal wire, being difficult to constitute corrosion.
Another object of the present invention is to provide the manufacture method of a kind of SPM, comprise the following steps:
Sheet metal is utilized to make the circuit-wiring layer as carrier；
In the surface-mounted component of described circuit-wiring layer, wherein, described component is with the side of back-off
Formula is assembled；
Radiator is mounted on power component in described component；
In the Surface coating sealant of described circuit-wiring layer, described component is covered and makes described heat radiation
At least part of surface exposure of device.
The manufacture method of above-mentioned SPM provides the benefit that: remove making substrate and insulating barrier thereon from
Operation, positioned by base, the difficulty of location when reducing plastic packaging, bottom is completely exposed, and reduces
During injecting glue, the upper and lower surface thickness great disparity difficulty to state modulator, eliminates metal wire bonding and matting,
Save equipment investment, improve production efficiency, reduce technique management and control requirement, make SPM
Manufacture difficulty declines to a great extent, and fine ratio of product is improved, and reduce further the cost of SPM.
Accompanying drawing explanation
The top view of the SPM that Fig. 1 (A) provides for the embodiment of the present invention；
Fig. 1 (B) is the profile in Fig. 1 (A) along X-X ' line；
Fig. 1 (C) is the top view after the SPM of the present invention removes sealant；
Fig. 1 (D) is the lower surface top view of the SPM of the present invention；
The manufacturing process flow diagram of the SPM that Fig. 2 provides for the embodiment of the present invention；
Fig. 3 (A), 3 (B) be respectively SPM of the present invention manufacture method in make circuit cloth
The vertical view of line and side-looking operation schematic diagram；
Fig. 4 (A) is the size indication figure of pin；
Fig. 4 (B) is the operation schematic diagram making pin；
Fig. 5 is the operation schematic diagram being mounted on fin in the bottom of power component
Fig. 6 (A) is the operation schematic diagram configuring wiring on base；
Fig. 6 (B) and 6 (C) is respectively assembly circuit element, the side-looking of pin and overlooks operation schematic diagram；
Fig. 7 is the sealing process schematic diagram of the manufacture method of SPM；
Fig. 8 is the detection operation schematic diagram of the manufacture method of SPM；
Fig. 9 is the process flow chart of the manufacture method of SPM.
Detailed description of the invention
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearer, with
Lower combination drawings and Examples, are further elaborated to the present invention.Should be appreciated that described herein
Specific embodiment only in order to explain the present invention, be not intended to limit the present invention.
As shown in Fig. 1 (A), Fig. 1 (B), Fig. 1 (C), Fig. 1 (D), SPM bag
Include circuit-wiring layer (wiring) 18, component 14, the circuit of radiator 15 composition, and configuration
At the pin 11 at described circuit-wiring layer 18 edge, and seal this circuit and described component is completely covered
14 and the sealant 12 of described wiring 18 upper surface.Wherein, Fig. 1 (A) is the intelligent merit of the present invention
The upper surface top view of rate module 10, described radiator 15 exposes from upper surface, and Fig. 1 (B) is along Fig. 1
(A) sectional view of X-X ' line, Fig. 1 (C) is to remove to cover the described close of described component 14
Top view after sealing 12, Fig. 1 (D) is the lower surface top view of the SPM 10 of the present invention,
Described wiring 18 exposes from lower surface.
Specifically, circuit-wiring layer 18 is as the carrier of SPM 10, described circuit-wiring layer 18
There is upper surface and the lower surface relative with this upper surface；Component 14 back-off is also welded in described circuit cloth
The upper surface precalculated position of line layer 18；Radiator 15 is mounted on the power component in described component 14；
Sealant 12 covers upper surface and the described component 18 of described circuit-wiring layer 18, and makes described heat radiation
Device 15 part surface is exposed.
Specifically, power component is Planar power device, as IGBT manages, it is necessary to use LIGBT.Heat radiation
Device 15 is fin, and fin surface can consider to carry out electrosilvering process, increases soaking into property.Sealant
12 is sealing resin layer.
Further, at least one edge close of wiring 18, there is the spy for configuration pin 11
Different wiring, referred to as pin pad 18A.Pin 11 pin pad 18A connects and from described circuit
Wiring 18 is outer to be extended.Described pin 11 surface is coated with coating.
The such each element of following description.
Wiring 18 is made by the form of punching press or etching by the copper material that thickness is more than 5 ounces,
For anti-oxidation, the upper surface of described wiring 18 can carry out gold-plated process, for cost, described
The upper surface of wiring 18 can also carry out silver-plated process, or is transported by vacuum or nitrogen gas packing
Defeated, upper surface does not deals with.
Described component 14 is fixed on described wiring 18 by upside-down mounting.Described component 14 uses
The active component such as transistor or diode or the passive element such as electric capacity or resistance.It addition, by by copper etc.
The radiator 15 made is mounted on the element back side that the caloric values such as power component are big.
Here, be designed on one side be provided with a plurality of pin 11, it has and such as carries out with outside inputting, exporting
Effect.Pin 11 and pin pad 18A are welded by electrical binding agents of conduction such as scolding tin.
Pin 11 typically uses the metals such as copper to make, and copper surface forms one layer of nickel stannum by chemical plating and plating and closes
Layer gold, the thickness of alloy-layer is generally 5 μm, and coating can protect copper not to be corroded oxidation, and can improve solderable
Connecing property.
Described sealant 12 can use thermosetting resin molding to be used as injecting mould side by transmission mould mode
Formula uses thermoplastic resin molding.Here, described sealant 12 fully seals the one of described wiring 18
All elements on face, and wrap up most of degree of depth of described wiring 18, only expose fraction circuit cloth
Line lower surface 18B, the wiring lower surface 18B degree of depth typically can consider to be designed to 0.5 ounce,
If the wiring lower surface 18B degree of depth is too small, after being likely to result in the SPM 10 of the present invention
Continue and be difficult to be wrapped up by solders such as tin creams during being welded and fixed, if the wiring lower surface 18B degree of depth is excessive,
During being likely to result in that the SPM 10 of the present invention is follow-up and being welded and fixed, tin cream climbs stannum height not
Can fully wrapped around wiring lower surface 18B；Here, described radiator 15 reveals from described sealant 12
Go out, make the heat of power component quickly be scattered and disappeared.
SPM provides the benefit that: be no longer necessary to metal basal board, by the base plate of repeatable utilization
Permanent circuit wiring layer is processed, and is finally fixed by resin, it is no longer necessary to metal bonding line, joint
Save cost, the wiring back side and fin have been completely exposed outside resin, improve heat radiation to greatest extent
Effect, the gap between wiring is completely exposed, and dampness is difficult to adhere to, and, even if invading in outside moisture,
Because the most there is not metal wire, it is difficult to constitute corrosion.
With reference to Fig. 2, the manufacture method of described SPM is described, comprises the following steps:
Step S110, utilizes sheet metal to make the circuit-wiring layer as carrier；
Step S120, in the surface-mounted component of described circuit-wiring layer, wherein, described component
Assemble in the way of back-off；
Step S120, the power component in described component mounts radiator；
Step S140, in the Surface coating sealant of described circuit-wiring layer, covers described component also
Make at least part of surface exposure of described radiator.
Step S140 is particularly as follows: be arranged around thermosetting resin frame on the surface of described circuit-wiring layer；Institute
State and inject thermoplastic resin in the range of thermosetting resin frame to seal described circuit-wiring layer and component.
Also included before step S120: make the step of the pin of independent band coating.This step is specifically wrapped
Include: choose Copper base material, to Copper base material by the way of punching press or etching, make pin in a row, between pin
Connected by reinforcement；Sequentially form nickel dam and nickeltin layer at described pin surface, obtain band coating
Pin.
Before step S140 further comprising the steps of: remove and remain in the scaling powder of described insulating barrier.
Being positioned by base, the difficulty of location when reducing plastic packaging, bottom is completely exposed, and reduces note
During glue, the upper and lower surface thickness great disparity difficulty to state modulator, eliminates metal wire bonding and matting, joint
Save equipment investment, improve production efficiency, reduced technique management and control requirement, make the system of SPM
Making difficulty to decline to a great extent, fine ratio of product is improved, and reduce further the cost of SPM.
In more specifically embodiment, in conjunction with Fig. 3 (A) to Fig. 9, the manufacture method bag of SPM
Include following operation.
First operation, with reference to Fig. 3 (A) and 3 (B):
First operation of the present invention is the operation as feature of present invention, and this operation is at sizeable cuprio
The operation of wiring is formed on plate.
First, with reference to Fig. 3 (A) and the sectional view 3 (B) of the X-X ' line prolonging Fig. 3 (A), according to need
The circuit layout design wanted, for general SPM, circuit layout not should be greater than 64mm ×
30mm.Produce suitable diel and stamp out specific shape.Also high-speed steel can be used to make by gong cutter
For material, motor uses the rotating speed of 5000 revs/min, and gong cutter and aluminium plane at right angles descend cutter stroke specific
Shape.Also can pass through etch tool, etch specific shape by chemical reaction.
Here, this given shape is exactly described wiring 18.
In the occasion that antagonism oxidation requirements is the highest, can be by the way of electrogilding or chemistry turmeric, described
Wiring 18 surface forms layer gold.
Here, the thickness of the copper coin for manufacturing described wiring 18 should be not less than 5 ounces, it is ensured that energy
There is bigger contact area with follow-up described resin 12, make described SPM 10 finished product have higher
Fixed effect.
Second operation, with reference to Fig. 4 (A) and Fig. 4 (B):
Second operation of the present invention is the operation as feature of present invention, and this operation is formed into independent band coating
The operation of pin 11.
Each pin 11 is to use Copper base material, and making length C is 25mm, and width K is 1.5mm, thick
Degree H is the strip of 1mm, as shown in Fig. 4 (A)；Here, for ease of assembling, a side pressure wherein
Make certain radian, as shown in Fig. 4 (B)；
Then nickel dam is formed by the method for chemical plating: by nickel salt and sodium hypophosphite mixed solution, and add
Add suitable chelating agent, formed nickel dam on the copper material surface forming given shape, have very at metallic nickel
Strong passivation ability, can be quickly generated one layer of very thin passivating film, can resist the corruption of air, alkali and some acid
Erosion.Nickel plating crystallization is superfine little, and nickel layer thickness is generally 0.1 μm；
Then pass through hydrosulphate technique, at room temperature the copper material forming shape and nickel dam is immersed in
Being energized in the plating solution of positive tin ion, form nickeltin layer on nickel dam surface, nickel layer thickness general control is 5
μm, the formation of nickel dam greatly improves protectiveness and solderability；
Arriving this, described pin 11 has manufactured.
Here, the described pin 11 of the present invention is single pin one by one, it is different from the entire row of current art
Pin, because the described wiring 18 that described pin 11 is fixed on only is wrapped by resin portion,
Impact strength is limited, and single pin avoids the operation of excision reinforcement, it is possible to reduce the present invention's
The systemic shock of SPM 10.
3rd operation, with reference to Fig. 5:
3rd operation of the present invention is the operation as feature of present invention, and this operation is will to produce radiator
15, and the bottom of L-type power component 14 is mounted on the operation on described radiator 15.
Radiator 15 may be designed as the copper sheet that thickness is about 1.5mm, system by the way of punching press or etching
Forming, copper sheet is silver-plated by the way of plating, and silver thickness is it is contemplated that be designed as 22～30 μm.
Then by eutectic technology, with the high temperature tin cream of fusing point more than 300 DEG C, it is contemplated that use field village brand,
The back side of L-type power component 14 is mounted on described radiator 15.Here, L-type power device 14
Being planar power device, all electrodes of this kind of power device are all located at the front of power device, front
Electrode be connected with described wiring 18 in following operation.
Here, the eutectic flatness of described power device 14 considers to control at < 0.1mm.
4th operation, with reference to Fig. 6 (A), 6 (B) and 6 (C):
3rd operation of the present invention is the operation as feature of present invention, and this operation is configuration institute on base plate 16
State wiring 18, and drawing described in component described in described wiring 18 surface upside-down mounting 14 and configuration
The operation of foot 11.
First, producing such as the base plate 16 of Fig. 6 (A), described base plate 16 can use the stainless of high intensity
Steel is made, on the surface of described base plate 16, and the depression that with good grounds described wiring 18 shape is dug out
17, the width of described depression 17 is slightly larger than the width of corresponding described wiring 18, described depression 17
The degree of depth be about 0.5 ounce.
Secondly, with reference to side view Fig. 6 (B) and top view Fig. 6 (C), the wiring 18 that will make
It is placed on the described recess of correspondence of described base plate 16, and by stencil printer, uses steel mesh, to described
The ad-hoc location of wiring 18 carries out tin cream application, and steel mesh can use the thickness of 0.13mm.Pass through SMT
The equipment such as machine or DA machine, carry out component 14, including the circuit elements being configured described radiator 15
Part 14, and the installation of pin 11, described component 14 can directly be inverted in described wiring 18
Ad-hoc location, pin 11 then one end to be placed on described pad 18A, and the other end needs carrier 20 to enter
Row is fixing, and described carrier 20 is made by materials such as synthesis stones.
Then, the described base plate 16 being put on described carrier 20 is solidified by Reflow Soldering, tin cream, described electricity
Circuit component 14 and described pin 11 are fixed.
5th operation, with reference to Fig. 7:
5th operation of the present invention is the operation as feature of present invention, with reference to Fig. 7, this operation be illustrate by
The operation of sealing resin 12 potted circuit wiring 18.Fig. 7 represents that use mould 50 is sealed quilt by sealing resin
The profile of the operation of the wiring 18 of described base plate 16 carrying.
First, toasting wiring 18 in oxygen-free environment, baking time is no less than 2 hours,
Baking temperature and selection 125 DEG C.
The base plate 16 of good for configuration described wiring 18 is transported to model 44 and 45.By making pin 11
Specific part contact with fixing device 46, carry out the location of described circuit substrate 16.
During matched moulds, it is being formed in the die cavity within mould 50 placement base plate 16, is then being injected by cast gate 53
Sealing resin forms sealant 12.The method carrying out sealing can use the transmission mould molding using thermosetting resin
Or use the injection mould molding of thermosetting resin.And, corresponding sealing resin 12 mould injected from cast gate 53
The gas in intracavity portion is externally discharged by air vent 54.
Here, described upper mold 44 should contact with described radiator 15, described lower mold 45 should connect with base plate 16
Touch.
6th operation, with reference to Fig. 8:
The present invention the 6th operation is by the molding of described pin 11 and the operation of functions of modules test, intelligent power
Module completes as goods through thus operation.
I.e. transmitting mould mold assembly step in front operation makes other parts in addition to pin 11 all be sealed by resin 12.
This operation is according to the length used and shape needs, such as, in the position of dotted line 51 by external pin 11 folding
Curve definite shape, it is simple to follow-up assembling.
Then module is put in test equipment, carry out the electric parameters testing of routine, because described pin 11
Separate, there may be part pin after molding not in same level, impact contact, so typically
Need first to carry out the engaged test of test machine golden finger and pin, if engaged test is not passed through, need institute
State pin 11 to carry out trimming process, until after engaged test is passed through, then carry out electrical characteristics test, including absolutely
The test events such as edge is pressure, quiescent dissipation, delay time, test passes person is finished product.
Utilize above-mentioned operation, complete the SPM 10 shown in Fig. 2.
These are only presently preferred embodiments of the present invention, not in order to limit the present invention, all the present invention's
Any amendment, equivalent and the improvement etc. made within spirit and principle, should be included in the guarantor of the present invention
Within the scope of protecting.
Claims (10)
1. a SPM, it is characterised in that including:
As the circuit-wiring layer of carrier, described circuit-wiring layer has upper surface and relative with this upper surface
Lower surface；
Back-off is also welded in the component in upper surface precalculated position of described circuit-wiring layer；
The radiator of the power component being mounted in described component；And
Cover the upper surface of described circuit-wiring layer and described component, and make described heat sink part surface
Exposed sealant.
2. SPM as claimed in claim 1, it is characterised in that also include pin, described electricity
Road wiring layer includes that, by antermarginal pin pad, described pin is connected and from described electricity with described pin pad
Road wiring is outer to be extended.
3. SPM as claimed in claim 2, it is characterised in that described pin surface is coated with
Coating.
4. SPM as claimed in claim 1, it is characterised in that described power component is plane
Power device.
5. SPM as claimed in claim 1, it is characterised in that described radiator is fin.
6. SPM as claimed in claim 1, it is characterised in that described sealant is resin bed.
7. the manufacture method of a SPM, it is characterised in that comprise the following steps:
Sheet metal is utilized to make the circuit-wiring layer as carrier；
In the surface-mounted component of described circuit-wiring layer, wherein, described component is with the side of back-off
Formula is assembled；
Radiator is mounted on power component in described component；
In the Surface coating sealant of described circuit-wiring layer, described component is covered and makes described heat radiation
At least part of surface exposure of device.
8. the manufacture method of SPM as claimed in claim 7, it is characterised in that be set forth in
The Surface coating sealant of described circuit-wiring layer, covers described component and makes described heat sink part
The sealant step of surface exposure particularly as follows:
It is arranged around thermosetting resin frame on the surface of described circuit-wiring layer；
Thermoplastic resin is injected to seal described circuit-wiring layer and electricity in the range of described thermosetting resin frame
Circuit component.
9. the manufacture method of SPM as claimed in claim 7, it is characterised in that be set forth in
Also include before the surface-mounted component step of described circuit-wiring layer:
Make the pin of independent band coating；Specifically include:
Choose Copper base material, to Copper base material by the way of punching press or etching, make pin in a row, between pin
Connected by reinforcement；
Sequentially form nickel dam and nickeltin layer at described pin surface, obtain the pin of band coating；
Described pin is welded on the pin pad at described circuit-wiring layer edge by Reflow Soldering.
10. the manufacture method of SPM as claimed in claim 7, it is characterised in that described
In the Surface coating sealant of described circuit-wiring layer, described component is covered and makes described radiator extremely
Before the step of the sealant of small part surface exposure further comprising the steps of:
Remove the scaling powder remaining in described insulating barrier.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610616058.8A CN106024651A (en) | 2016-07-29 | 2016-07-29 | Intelligent power module and manufacturing method thereof |
| PCT/CN2016/113993 WO2018018849A1 (en) | 2016-07-29 | 2016-12-31 | Intelligent power module and method for manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610616058.8A CN106024651A (en) | 2016-07-29 | 2016-07-29 | Intelligent power module and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106024651A true CN106024651A (en) | 2016-10-12 |
Family
ID=57115179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610616058.8A Pending CN106024651A (en) | 2016-07-29 | 2016-07-29 | Intelligent power module and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106024651A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409747A (en) * | 2016-11-15 | 2017-02-15 | 广东美的制冷设备有限公司 | Intelligent power module and manufacture method thereof |
| CN106409800A (en) * | 2016-11-15 | 2017-02-15 | 广东美的制冷设备有限公司 | Intelligent power module and manufacturing method thereof |
| CN106409778A (en) * | 2016-11-15 | 2017-02-15 | 广东美的制冷设备有限公司 | Intelligent power module and manufacturing method thereof |
| CN107045991A (en) * | 2017-03-13 | 2017-08-15 | 广东美的制冷设备有限公司 | Circuit module and its manufacture method |
| CN107045990A (en) * | 2017-03-13 | 2017-08-15 | 广东美的制冷设备有限公司 | Circuit module and its manufacture method |
| WO2018018849A1 (en) * | 2016-07-29 | 2018-02-01 | 广东美的制冷设备有限公司 | Intelligent power module and method for manufacturing same |
| CN108807292A (en) * | 2018-06-15 | 2018-11-13 | 南通沃特光电科技有限公司 | A kind of intelligent power module and its manufacturing method |
| CN110829733A (en) * | 2019-10-24 | 2020-02-21 | 珠海凯邦电机制造有限公司 | Control panel, motor and air conditioning system |
| CN112637982A (en) * | 2020-12-22 | 2021-04-09 | 佛山市孔星材料应用研究院有限公司 | Circuit module, electromagnetic induction heating circuit module and processing technology thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101880A (en) * | 2006-07-03 | 2008-01-09 | 矽品精密工业股份有限公司 | Heat dissipation type package structure and manufacturing method thereof |
| KR20100008460A (en) * | 2008-07-16 | 2010-01-26 | 주식회사 케이이씨 | Power semiconductor device and manufacturing method thereof |
| CN102339818A (en) * | 2010-07-15 | 2012-02-01 | 台达电子工业股份有限公司 | Power module |
| US20120319260A1 (en) * | 2011-06-17 | 2012-12-20 | Samsung Electro-Mechanics Co., Ltd. | Power module package and system module having the same |
| CN203367261U (en) * | 2013-06-05 | 2013-12-25 | 吉林华微斯帕克电气有限公司 | Power module |
| CN205881892U (en) * | 2016-07-29 | 2017-01-11 | 广东美的制冷设备有限公司 | Intelligent power module |
-
2016
- 2016-07-29 CN CN201610616058.8A patent/CN106024651A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101880A (en) * | 2006-07-03 | 2008-01-09 | 矽品精密工业股份有限公司 | Heat dissipation type package structure and manufacturing method thereof |
| KR20100008460A (en) * | 2008-07-16 | 2010-01-26 | 주식회사 케이이씨 | Power semiconductor device and manufacturing method thereof |
| CN102339818A (en) * | 2010-07-15 | 2012-02-01 | 台达电子工业股份有限公司 | Power module |
| US20120319260A1 (en) * | 2011-06-17 | 2012-12-20 | Samsung Electro-Mechanics Co., Ltd. | Power module package and system module having the same |
| CN203367261U (en) * | 2013-06-05 | 2013-12-25 | 吉林华微斯帕克电气有限公司 | Power module |
| CN205881892U (en) * | 2016-07-29 | 2017-01-11 | 广东美的制冷设备有限公司 | Intelligent power module |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018018849A1 (en) * | 2016-07-29 | 2018-02-01 | 广东美的制冷设备有限公司 | Intelligent power module and method for manufacturing same |
| CN106409747A (en) * | 2016-11-15 | 2017-02-15 | 广东美的制冷设备有限公司 | Intelligent power module and manufacture method thereof |
| CN106409800A (en) * | 2016-11-15 | 2017-02-15 | 广东美的制冷设备有限公司 | Intelligent power module and manufacturing method thereof |
| CN106409778A (en) * | 2016-11-15 | 2017-02-15 | 广东美的制冷设备有限公司 | Intelligent power module and manufacturing method thereof |
| CN107045991A (en) * | 2017-03-13 | 2017-08-15 | 广东美的制冷设备有限公司 | Circuit module and its manufacture method |
| CN107045990A (en) * | 2017-03-13 | 2017-08-15 | 广东美的制冷设备有限公司 | Circuit module and its manufacture method |
| CN108807292A (en) * | 2018-06-15 | 2018-11-13 | 南通沃特光电科技有限公司 | A kind of intelligent power module and its manufacturing method |
| CN110829733A (en) * | 2019-10-24 | 2020-02-21 | 珠海凯邦电机制造有限公司 | Control panel, motor and air conditioning system |
| CN110829733B (en) * | 2019-10-24 | 2022-02-01 | 珠海凯邦电机制造有限公司 | Control panel, motor and air conditioning system |
| CN112637982A (en) * | 2020-12-22 | 2021-04-09 | 佛山市孔星材料应用研究院有限公司 | Circuit module, electromagnetic induction heating circuit module and processing technology thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106024651A (en) | Intelligent power module and manufacturing method thereof | |
| CN104112719B (en) | Hybrid integrated circuit module and manufacturing method thereof | |
| JP2005191240A (en) | Semiconductor device and method for manufacturing the same | |
| CN106158801A (en) | A kind of SPM and manufacture method thereof | |
| CN106601691A (en) | Intelligent power module, intelligent power module preparation method, and power electronic equipment | |
| CN204481692U (en) | Intelligent power module | |
| CN104835794A (en) | Intelligent power module and method for manufacturing same | |
| CN206116377U (en) | Intelligent power module | |
| CN104795374A (en) | Intelligent power module and manufacturing method thereof | |
| CN106098652A (en) | A kind of SPM and manufacture method thereof | |
| CN113113401A (en) | Semiconductor circuit and method for manufacturing semiconductor circuit | |
| CN106298698A (en) | A kind of SPM and manufacture method thereof | |
| CN106024652A (en) | Intelligent power module and manufacturing method thereof | |
| CN113113400A (en) | Semiconductor circuit and method for manufacturing semiconductor circuit | |
| CN205881892U (en) | Intelligent power module | |
| CN104795378A (en) | Intelligent power module and manufacturing method thereof | |
| CN104766842A (en) | Intelligent power module and manufacturing method thereof | |
| CN104767396B (en) | SPM and its manufacture method | |
| CN205900526U (en) | Intelligent power module | |
| CN206040627U (en) | Intelligent power module | |
| CN106067450A (en) | A kind of SPM and manufacture method thereof | |
| CN205845942U (en) | Spm | |
| CN107293523A (en) | A kind of SPM and its manufacture method | |
| CN206497888U (en) | SPM and power electronic equipment | |
| CN203481218U (en) | Intelligent power module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161012 |
|
| RJ01 | Rejection of invention patent application after publication |