CN106067450A - A kind of SPM and manufacture method thereof - Google Patents
A kind of SPM and manufacture method thereof Download PDFInfo
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- CN106067450A CN106067450A CN201610616067.7A CN201610616067A CN106067450A CN 106067450 A CN106067450 A CN 106067450A CN 201610616067 A CN201610616067 A CN 201610616067A CN 106067450 A CN106067450 A CN 106067450A
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- spm
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 229920005989 resin Polymers 0.000 claims abstract description 27
- 239000011347 resin Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000000565 sealant Substances 0.000 claims abstract description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 5
- 238000004080 punching Methods 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 4
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 claims description 4
- 230000002787 reinforcement Effects 0.000 claims description 3
- 229920005992 thermoplastic resin Polymers 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 239000002585 base Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 238000007747 plating Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000006071 cream Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 235000003392 Curcuma domestica Nutrition 0.000 description 1
- 244000008991 Curcuma longa Species 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008485 antagonism Effects 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229940006460 bromide ion Drugs 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- -1 copper to make Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 235000003373 curcuma longa Nutrition 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000009885 systemic effect Effects 0.000 description 1
- 235000013976 turmeric Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
A kind of SPM and manufacture method thereof, SPM includes: as the circuit-wiring layer of carrier, and described circuit-wiring layer has upper surface and the lower surface relative with this upper surface；Back-off is also welded in the component in upper surface precalculated position of described circuit-wiring layer；The radiator of the power component being mounted in described component, described radiator upper surface has been sticked temperature-sensitive element；And cover the upper surface of described circuit-wiring layer and described component, and make the sealant of described temperature-sensitive element surface exposure.It is no longer necessary to metal basal board, is processed by the base plate permanent circuit wiring layer of repeatable utilization, is finally fixed by resin, it is no longer necessary to metal bonding line, provide cost savings, the wiring back side and fin are completely exposed outside resin, improve radiating effect to greatest extent, gap between wiring is completely exposed, dampness is difficult to adhere to, and, even if invading in outside moisture, because the most there is not metal wire, it is difficult to constitute corrosion.
Description
Technical field
The invention belongs to electronic device manufacturing process field, particularly relate to a kind of SPM and manufacture method thereof.
Background technology
SPM (Intelligent Power Module, IPM) is a kind of by power electronics and integrated circuit
The power drive series products that technology combines.IPM integrates device for power switching and high-voltage driving circuit, and in kept
Voltage, overcurrent and the failure detector circuit such as overheated.IPM mono-aspect receives the control signal of MCU, drives subsequent conditioning circuit work,
On the other hand the state detection signal of system is sent back to MCU.Compared with traditional discrete scheme, IPM is with its high integration, highly reliable
Property etc. advantage win increasing market, be particularly suitable for driving the converter of motor and various inverter, be that frequency conversion is adjusted
Speed, metallurgical machinery, electric propulsion, servo-drive, a kind of desired power level electronic device of frequency-conversion domestic electric appliances.
SPM typically can be operated in severe operating mode, such as the off-premises station of convertible frequency air-conditioner, hot and humid shape
Under state, high temperature can make SPM internal temperature raise, complete by described sealing resin for existing SPM
The structure sealed, internal being very easy to of SPM produces heat localization, high humidity can make aqueous vapor pass through described sealing resin with
Gap between pin enters the internal circuit of described SPM, the high temperature within described SPM make from
Son, particularly chloride ion and bromide ion migrate under the effect of aqueous vapor, and metal wire is produced corrosion, and this corrosion often goes out
Now metal wire and component or metal wire and the joint portion of described wiring, cause open circuit, to SPM structure
Become fatal damages, time serious, can make SPM that explosion accident out of control occurs, be applied to environment structure infringement, cause weight
Big economic loss.
It addition, SPM has the device of different capacity, for the device of different capacity, the material of metal wire is with thick
The most different, add the difficulty of processing of SPM, buy different nation's line equipment and also add processing cost,
Further, the combination of multiple nation Wiring technology makes the manufacture first-pass yield step-down of described SPM, produces yield and is difficult to improve.?
The cost causing described SPM eventually remains high, and have impact on the popularization and application of SPM.
Summary of the invention
Present invention seek to address that the deficiencies in the prior art, it is provided that the SPM of a kind of high reliability and adapt to this kind
The process flow of structure, as manufacture method, can reduce while having more good contact reliability ensureing SPM
The cost of SPM.
The present invention is achieved in that a kind of SPM, including:
As the circuit-wiring layer of carrier, described circuit-wiring layer has upper surface and the following table relative with this upper surface
Face；
Back-off is also welded in the component in upper surface precalculated position of described circuit-wiring layer；
The radiator of the power component being mounted in described component, wherein, described radiator upper surface has been sticked heat
Quick element；And
Cover the upper surface of described circuit-wiring layer and described component, and make the close of described temperature-sensitive element surface exposure
Sealing.
Further, also include that pin, described circuit-wiring layer include by antermarginal pin pad, described pin and institute
State pin pad connect and extend outside described wiring.
Further, described radiator upper surface is configured with insulating barrier, and pressing circuit pattern on described insulating barrier, institute
State temperature-sensitive element to be configured on described circuit pattern.
Further, described power component is Planar power device.
Further, described radiator is fin.
Further, described sealant is resin bed.
Above-mentioned SPM provides the benefit that: be no longer necessary to metal basal board, solid by the base plate of repeatable utilization
Determine circuit-wiring layer to be processed, finally fixed by resin, it is no longer necessary to metal bonding line, provide cost savings, by electricity
Road wired back is completely exposed outside resin, improves radiating effect to greatest extent, and the gap between wiring is completely exposed,
Dampness is difficult to adhere to, and, even if invading in outside moisture, because the most there is not metal wire, it is difficult to constitute corrosion.Temperature-sensitive element
With the upper and lower sides that power component is positioned at same fin, and temperature-sensitive element exposes from resin, and the temperature making power component is permissible
Detected in real time, improve the safety in utilization of SPM.
Another object of the present invention is to provide the manufacture method of a kind of SPM, comprise the following steps:
Sheet metal is utilized to make the circuit-wiring layer as carrier；
In the surface-mounted component of described circuit-wiring layer, wherein, described component assembles in the way of back-off；
Mounting radiator on power component in described component, wherein, described radiator upper surface has been sticked heat
Quick element；
In the Surface coating sealant of described circuit-wiring layer, described component is covered and makes described temperature-sensitive element table
Face is exposed.
The manufacture method of above-mentioned SPM provides the benefit that: remove making substrate and the work of insulating barrier thereon from
Sequence, is positioned by base, and the difficulty of location when reducing plastic packaging, bottom is completely exposed, upper and lower surface when reducing injecting glue
The thickness great disparity difficulty to state modulator, eliminates metal wire bonding and matting, saves equipment investment, improve production
Efficiency, reduces technique management and control requirement, makes the manufacture difficulty of SPM decline to a great extent, and fine ratio of product is improved, and enters
One step reduces the cost of SPM.
Accompanying drawing explanation
The top view of the SPM that Fig. 1 (A) provides for the embodiment of the present invention；
Fig. 1 (B) is the profile in Fig. 1 (A) along X-X ' line；
Fig. 1 (C) is the top view after the SPM of the present invention removes sealant；
Fig. 1 (D) is the lower surface top view of the SPM of the present invention；
The manufacturing process flow diagram of the SPM that Fig. 2 provides for the embodiment of the present invention；
Fig. 3 (A), 3 (B) be respectively SPM of the present invention manufacture method in make vertical view and the side of wiring
Depending on operation schematic diagram；
Fig. 4 (A) is the size indication figure of pin；
Fig. 4 (B) is the operation schematic diagram making pin；
Fig. 4 (C) is to make radiator and forming the operation schematic diagram of circuit pattern at radiator；
Fig. 5 is the operation schematic diagram being mounted on fin in the bottom of power component；
Fig. 6 (A) is the operation schematic diagram configuring wiring on base；
Fig. 6 (B) and 6 (C) is respectively assembly circuit element, the side-looking of pin and overlooks operation schematic diagram；
Fig. 7 is the sealing process schematic diagram of the manufacture method of SPM；
Fig. 8 is the detection operation schematic diagram of the manufacture method of SPM；
Fig. 9 is the process flow chart of the manufacture method of SPM.
Detailed description of the invention
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearer, below in conjunction with
Drawings and Examples, are further elaborated to the present invention.Should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
As shown in Fig. 1 (A), Fig. 1 (B), Fig. 1 (C), Fig. 1 (D), SPM includes circuit-wiring layer (circuit cloth
Line) 18, the circuit that constitutes of component 14, radiator 15, and be arranged in the pin 11 at described wiring 18 edge, and configuration
Insulating barrier 19 on radiator 15 and circuit pattern 18C, and the temperature-sensitive element 21 being arranged on wiring 18C, and seal
This circuit and described component 14 and the sealant 12 of described wiring 18 upper surface are completely covered.Wherein, Fig. 1 (A) is
The upper surface top view of the SPM 10 of the present invention, described radiator 15 exposes from upper surface, and Fig. 1 (B) is along Fig. 1
(A) sectional view of X-X ' line, Fig. 1 (C) is the top view after removing the described sealant 12 covering described component 14, figure
1 (D) is the lower surface top view of the SPM 10 of the present invention, and described wiring 18 exposes from lower surface.
Specifically, circuit-wiring layer 18 has upper table as the carrier of SPM 10, described circuit-wiring layer 18
Face and the lower surface relative with this upper surface；Component 14 back-off and be welded in described circuit-wiring layer 18 upper surface make a reservation for
Position；Radiator 15 is mounted on the power component in described component 14, and wherein, radiator 15 upper surface has been sticked temperature-sensitive
Element 21；Sealant 12 covers upper surface and the described component 18 of described circuit-wiring layer 18, and makes described temperature-sensitive element
21 surface exposures.
Specifically, power component is Planar power device, as IGBT manages, it is necessary to use LIGBT.Radiator 15 is heat radiation
Sheet, fin surface can consider to carry out electrosilvering process, increases soaking into property.Sealant 12 is sealing resin layer.
Further, radiator 15 upper surface configuration insulating barrier 19, and pressing circuit pattern 18C on insulating barrier 19, institute
State temperature-sensitive element 21 and be configured at 18C on described circuit pattern.
On at least one edge close of wiring 18, there is the special wiring for configuration pin 11, be referred to as
Pin pad 18A.Pin 11 pin pad 18A connects and from the described outer extension of wiring 18.Described pin 11 surface covers
There is coating.
The such each element of following description.
Wiring 18 is made by the form of punching press or etching by the copper material that thickness is more than 5 ounces, in order to anti-
Oxidation, the upper surface of described wiring 18 can carry out gold-plated process, for cost, the upper surface of described wiring 18
Can also carry out silver-plated process, or be transported by vacuum or nitrogen gas packing, upper surface does not deals with.
Described component 14 is fixed on described wiring 18 by upside-down mounting.Described component 14 use transistor or
The active components such as diode or the passive element such as electric capacity or resistance.It addition, be mounted on by the radiator 15 being made up of copper etc.
The element back side that the caloric values such as power component are big.
The upper surface of described radiator 15 covers insulating barrier 19, and the thickness of described insulating barrier 19 can be designed as 70 μm, heat
Conductance 2W/ (m K), here, in order to improve heat conductivity, enable the heat of described LIGBT to be delivered to rapidly described temperature-sensitive element
21, the thickness of described insulating barrier 19 can be reduced to 50 μm, and thermal conductivity can bring up to 5W/ (m K), in order to mention reliability,
Avoid insulating barrier 19 and apply uneven partial breakdown when causing life-time service because of crossing the thinnest, can be by the thickness of described insulating barrier 19
Degree increases to 110 μm, in order to balance cost, thermal conductivity can be reduced to 1.5W/ (m K).
The upper surface of described insulating barrier 19 closes Copper Foil and constitutes described circuit pattern 18C, can select the Copper Foil of 1 ounce, institute
Stating temperature-sensitive element 21 to be arranged on described circuit pattern 18C, described temperature-sensitive element 21 can be NTC resistance, can be PTC electricity
Resistance or other temperature-sensing elements, for the monitoring LIGBT pipe being configured on same described radiator 15 below in real time
Variations in temperature.In the present embodiment, two end element are employed, it is possible to use the three-terminal elements such as PNP pipe, NPN pipe.
Here, be designed to be provided with a plurality of pin 11 on one side, it has the effect such as carrying out inputting, export with outside.
Pin 11 and pin pad 18A are welded by electrical binding agents of conduction such as scolding tin.
Pin 11 typically uses the metals such as copper to make, and copper surface forms one layer of nickeltin layer by chemical plating and plating,
The thickness of alloy-layer is generally 5 μm, and coating can protect copper not to be corroded oxidation, and can improve weldability.
Described sealant 12 can use thermosetting resin molding to be used as injecting mould mode by transmission mould mode and use
Thermoplastic resin moulds.Here, described sealant 12 fully seals all elements in the one side of described wiring 18, and wrap
Wrap up in most of degree of depth of described wiring 18, only expose fraction wiring lower surface 18B, wiring lower surface 18B
The degree of depth typically can consider to be designed to 0.5 ounce, if the wiring lower surface 18B degree of depth is too small, is likely to result in this
Invention SPM 10 follow-up be welded and fixed during be difficult to be wrapped up by solders such as tin creams, if wiring lower surface
The 18B degree of depth is excessive, and during being likely to result in that the SPM 10 of the present invention is follow-up and being welded and fixed, tin cream climbs stannum height
Can not fully wrapped around wiring lower surface 18B；Here, described temperature-sensitive element 21 exposes from described sealant 12, make described
The electrode of temperature-sensitive element 21 exposes, such that it is able to be detected outside SPM 10.Make the heat of power component by soon
Speed is scattered and disappeared.
SPM provides the benefit that: be no longer necessary to metal basal board, by the fixing electricity of the base plate of repeatable utilization
Road wiring layer is processed, and is finally fixed by resin, it is no longer necessary to metal bonding line, provides cost savings, by circuit cloth
The line back side and radiator are completely exposed outside resin, improve radiating effect to greatest extent, and the gap between wiring is the most sudden and the most violent
Dew, dampness is difficult to adhere to, and, even if invading in outside moisture, because the most there is not metal wire, it is difficult to constitute corrosion.Temperature-sensitive
Element and power component are positioned at the upper and lower sides of same fin, and temperature-sensitive element exposes from resin, make the temperature of power component
Can be detected in real time, improve the safety in utilization of SPM.
With reference to Fig. 2, the manufacture method of described SPM is described, comprises the following steps:
Step S110, utilizes sheet metal to make the circuit-wiring layer as carrier；
Step S120, in the surface-mounted component of described circuit-wiring layer, wherein, described component is with back-off
Mode is assembled；
Step S120, the power component in described component mounts radiator, wherein, described radiator upper surface
Be sticked temperature-sensitive element；
Step S140, in the Surface coating sealant of described circuit-wiring layer, covers described component and makes described
Temperature-sensitive element surface exposure.
Step S140 is particularly as follows: be arranged around thermosetting resin frame on the surface of described circuit-wiring layer；Hard in described heat
Property resin frame in the range of inject thermoplastic resin to seal described circuit-wiring layer and component.
Also included before step S120: make the step of the pin of independent band coating.This step specifically includes: choose
Copper base material, to Copper base material by the way of punching press or etching, is made pin in a row, is connected by reinforcement between pin；Institute
State pin surface and sequentially form nickel dam and nickeltin layer, obtain the pin of band coating.
Before step S140 further comprising the steps of: remove and remain in the scaling powder of described insulating barrier.
Being positioned by base, the difficulty of location when reducing plastic packaging, bottom is completely exposed, and reduces during injecting glue upper and lower
The surface thickness great disparity difficulty to state modulator, eliminates metal wire bonding and matting, saves equipment investment, improve
Production efficiency, reduces technique management and control requirement, makes the manufacture difficulty of SPM decline to a great extent, and fine ratio of product is carried
Height, reduce further the cost of SPM.
In more specifically embodiment, in conjunction with Fig. 3 (A) to Fig. 9, the manufacture method of SPM includes following work
Sequence.
First operation, with reference to Fig. 3 (A) and 3 (B):
First operation of the present invention is the operation as feature of present invention, and this operation is shape on sizeable copper base
Become the operation of wiring.
First, with reference to Fig. 3 (A) and the sectional view 3 (B) of the X-X ' line prolonging Fig. 3 (A), circuit layout design as required,
For general SPM, circuit layout not should be greater than 64mm × 30mm.Produce suitable diel to stamp out
Specific shape.Also high-speed steel can be used to use the rotating speed of 5000 revs/min, gong cutter and aluminum as material, motor by gong cutter
Material plane at right angles descends the specific shape of cutter stroke.Also can pass through etch tool, etch specific shape by chemical reaction.
Here, this given shape is exactly described wiring 18.
In the occasion that antagonism oxidation requirements is the highest, can be by the way of electrogilding or chemistry turmeric, at described circuit cloth
Line 18 surface forms layer gold.
Here, the thickness of the copper coin for manufacturing described wiring 18 should be not less than 5 ounces, it is ensured that can be with follow-up
Described resin 12 has bigger contact area, makes described SPM 10 finished product have higher fixed effect.
Second operation, with reference to Fig. 4 (A), Fig. 4 (B) and Fig. 4 (C):
Second operation of the present invention is the operation as feature of present invention, and this operation is formed into the pin of independent band coating
The operation of 11.
Each pin 11 is to use Copper base material, and making length C is 25mm, and width K is 1.5mm, and thickness H is the strip of 1mm
Shape, as shown in Fig. 4 (A)；Here, for ease of assembling, one end suppresses certain radian wherein, as shown in Fig. 4 (B)；
Then nickel dam is formed by the method for chemical plating: by nickel salt and sodium hypophosphite mixed solution, and with the addition of suitable
When chelating agent, form nickel dam on the copper material surface forming given shape, at metallic nickel there is the strongest passivation ability, can be fast
Fast-growing becomes one layer of very thin passivating film, can resist the corrosion of air, alkali and some acid.Nickel plating crystallization is superfine little, nickel layer thickness one
As be 0.1 μm；
Then pass through hydrosulphate technique, at room temperature the copper material forming shape and nickel dam is immersed in positive stannum from
Being energized in the plating solution of son, form nickeltin layer on nickel dam surface, nickel layer thickness general control is in 5 μm, and the formation of nickel dam is very big
Improve protectiveness and solderability；
Arriving this, described pin 11 has manufactured.
Here, the described pin 11 of the present invention is single pin one by one, it is different from the entire row pin of current art, because of
The described wiring 18 being fixed on for described pin 11 is only wrapped by resin portion, and impact strength is limited, single
Only pin avoids the operation of excision reinforcement, it is possible to reduce the systemic shock of the SPM 10 to the present invention.
As shown in Fig. 4 (C), according to power component size, design 20mm × 30mm, 30mm × 40mm etc. different size of
Copper sheet, the thickness of copper sheet, in order to cost-effective, can be 2mm, in order to improve thermal diffusivity, it is also possible to be 3mm, by punching press or
The mode of etching is made, and copper sheet is silver-plated by the way of plating, and silver thickness is it is contemplated that be designed as 22～30 μm, then,
Surface pressing insulating barrier 19 and a Copper Foil simultaneously wherein, is cooled down by high-temperature laminating and room temperature and obtains, then enter Copper Foil
Row etching, removes redundance, the circuit pattern 18C needed for formation.Here, fin, insulating barrier 19, circuit pattern 18C
Combination can be to be individually formed one by one, it is also possible to is by being stamped and formed out after heavy section one pressing, etching.
3rd operation, with reference to Fig. 5:
3rd operation of the present invention is the operation as feature of present invention, and this operation is will to produce radiator 15, and by L
The bottom of type power component 14 is mounted on the operation on described radiator 15.
Radiator 15 may be designed as the copper sheet that thickness is about 1.5mm, is made by the way of punching press or etching, copper
Sheet is silver-plated by the way of plating, and silver thickness is it is contemplated that be designed as 22～30 μm.
Then by eutectic technology, with the high temperature tin cream of fusing point more than 300 DEG C, it is contemplated that use field village brand, by L-type merit
The back side of rate element 14 is mounted on described radiator 15.Here, L-type power device 14 is planar power device, this kind
All electrodes of power device are all located at the front of power device, the electrode in front in following operation with described wiring 18
It is connected.
Here, the eutectic flatness of described power device 14 considers to control at < 0.1mm.
4th operation, with reference to Fig. 6 (A), 6 (B) and 6 (C):
3rd operation of the present invention is the operation as feature of present invention, and this operation is to configure described circuit on base plate 16
Wiring 18, and in component described in described wiring 18 surface upside-down mounting 14 and the operation of the described pin 11 of configuration.
First, producing such as the base plate 16 of Fig. 6 (A), described base plate 16 can use the rustless steel of high intensity to be made,
On the surface of described base plate 16, the depression 17 that with good grounds described wiring 18 shape is dug out, the width of described depression 17 is bigger
In the width of corresponding described wiring 18, the degree of depth of described depression 17 is about 0.5 ounce.
Secondly, with reference to side view Fig. 6 (B) and top view Fig. 6 (C), the wiring 18 made is placed on the described end
The described recess of correspondence of plate 16, and by stencil printer, use steel mesh, the ad-hoc location of described wiring 18 is carried out
Tin cream application, steel mesh can use the thickness of 0.13mm.By equipment such as SMT machine or DA machines, carry out component 14, including
Configuring the component 14 of described radiator 15, and the installation of pin 11, described component 14 can directly be inverted in described electricity
The ad-hoc location of road wiring 18, pin 11 then one end to be placed on described pad 18A, and it is solid that the other end needs carrier 20 to carry out
Fixed, described carrier 20 is made by materials such as synthesis stones.Again with SMT machine or DA machine, temperature-sensitive element 21 is arranged in circuit pattern
On 18C.
Then, the described base plate 16 being put on described carrier 20 is solidified by Reflow Soldering, tin cream, described component 14 He
Described pin 11 is fixed.
5th operation, with reference to Fig. 7:
5th operation of the present invention is the operation as feature of present invention, and with reference to Fig. 7, this operation is to illustrate by sealing resin
The operation of 12 potted circuit wirings 18.Fig. 7 represents the wiring using mould 50 to be carried by base plate 16 by sealing resin sealing
The profile of the operation of 18.
First, toasting wiring 18 in oxygen-free environment, baking time is no less than 2 hours, baking temperature
With selection 125 DEG C.
The described base plate 16 of good for configuration described wiring 18 is transported to model 44 and 45.By making the specific of pin 11
Part contacts with fixing device 46, carries out the location of base plate 16.
During matched moulds, it is being formed in the die cavity within mould 50 placement base plate 16, is then being injected sealing resin by cast gate 53
Form sealant 12.The method carrying out sealing can use and uses the transmission mould molding of thermosetting resin or use thermosetting resin
Injection mould moulds.And, the corresponding gas from sealing resin 12 mold cavity of cast gate 53 injection is discharged into by air vent 54
Outside.
Here, described upper mold 44 should contact with temperature-sensitive element 21, described lower mold 45 should contact with described base plate 16.
6th operation, with reference to Fig. 8:
The present invention the 6th operation is by the molding of described pin 11 and the operation of functions of modules test, SPM warp
Thus operation completes as goods.
I.e. transmitting mould mold assembly step in front operation makes other parts in addition to pin 11 all be sealed by resin 12.This operation
According to the length used and shape needs, such as, in the position of dotted line 51, external pin 11 is bent into definite shape, it is simple to after
Continuous assembling.
Then module is put in test equipment, carry out the electric parameters testing of routine, because described pin 11 is separate,
There may be part pin after molding not in same level, impact contact, so it is generally required to first carrying out test machine gold hands
Refer to the engaged test with pin, if engaged test is not passed through, need described pin 11 is trimmed process, until contact is surveyed
After pinging, then carry out electrical characteristics test, including the test events such as pressure, the quiescent dissipation of insulating, delay time, test passes
Person is finished product.
Utilize above-mentioned operation, complete the SPM 10 shown in Fig. 2.
These are only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Any amendment, equivalent and the improvement etc. made within principle, should be included within the scope of the present invention.
Claims (10)
1. a SPM, it is characterised in that including:
As the circuit-wiring layer of carrier, described circuit-wiring layer has upper surface and the lower surface relative with this upper surface；
Back-off is also welded in the component in upper surface precalculated position of described circuit-wiring layer；
The radiator of the power component being mounted in described component, wherein, described radiator upper surface be sticked temperature-sensitive unit
Part；And
Cover the upper surface of described circuit-wiring layer and described component, and make the sealing of described temperature-sensitive element surface exposure
Layer.
2. SPM as claimed in claim 1, it is characterised in that also include that pin, described circuit-wiring layer include
By antermarginal pin pad, described pin is connected with described pin pad and extends outside described wiring.
3. SPM as claimed in claim 2, it is characterised in that described radiator upper surface is configured with insulating barrier,
And on described insulating barrier pressing circuit pattern, described temperature-sensitive element is configured on described circuit pattern.
4. SPM as claimed in claim 1, it is characterised in that described power component is Planar power device.
5. SPM as claimed in claim 1, it is characterised in that described radiator is fin.
6. SPM as claimed in claim 1, it is characterised in that described sealant is resin bed.
7. the manufacture method of a SPM, it is characterised in that comprise the following steps:
Sheet metal is utilized to make the circuit-wiring layer as carrier；
In the surface-mounted component of described circuit-wiring layer, wherein, described component assembles in the way of back-off；
On power component in described component mount radiator, wherein, described radiator upper surface be sticked temperature-sensitive unit
Part；
In the Surface coating sealant of described circuit-wiring layer, described component is covered and makes described temperature-sensitive element surface naked
Dew.
8. the manufacture method of SPM as claimed in claim 7, it is characterised in that at be set forth in described wiring
The Surface coating sealant of layer, covers described component and makes the sealant step of described heat sink part surface exposure have
Body is:
It is arranged around thermosetting resin frame on the surface of described circuit-wiring layer；
Thermoplastic resin is injected to seal described circuit-wiring layer and component in the range of described thermosetting resin frame.
9. the manufacture method of SPM as claimed in claim 7, it is characterised in that at be set forth in described wiring
Also include before the surface-mounted component step of layer:
Make the pin of independent band coating；Specifically include:
Choose Copper base material, to Copper base material by the way of punching press or etching, make pin in a row, between pin by reinforcement even
Connect；
Sequentially form nickel dam and nickeltin layer at described pin surface, obtain the pin of band coating；
Described pin is welded on the pin pad at described circuit-wiring layer edge by Reflow Soldering.
10. the manufacture method of SPM as claimed in claim 7, it is characterised in that at be set forth in described circuit cloth
The Surface coating sealant of line layer, covers and makes the sealant of at least part of surface exposure of described radiator by described component
Step before further comprising the steps of:
Remove the scaling powder remaining in described insulating barrier.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610616067.7A CN106067450A (en) | 2016-07-29 | 2016-07-29 | A kind of SPM and manufacture method thereof |
| PCT/CN2016/113993 WO2018018849A1 (en) | 2016-07-29 | 2016-12-31 | Intelligent power module and method for manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610616067.7A CN106067450A (en) | 2016-07-29 | 2016-07-29 | A kind of SPM and manufacture method thereof |
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| CN106067450A true CN106067450A (en) | 2016-11-02 |
Family
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| CN201610616067.7A Pending CN106067450A (en) | 2016-07-29 | 2016-07-29 | A kind of SPM and manufacture method thereof |
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| WO2018018849A1 (en) * | 2016-07-29 | 2018-02-01 | 广东美的制冷设备有限公司 | Intelligent power module and method for manufacturing same |
| CN108807290A (en) * | 2018-06-15 | 2018-11-13 | 南通沃特光电科技有限公司 | A kind of semiconductor power device package module and its manufacturing method |
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