CN106352999A - Temperature measuring method and temperature measuring structure - Google Patents
Temperature measuring method and temperature measuring structure Download PDFInfo
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- CN106352999A CN106352999A CN201510415507.8A CN201510415507A CN106352999A CN 106352999 A CN106352999 A CN 106352999A CN 201510415507 A CN201510415507 A CN 201510415507A CN 106352999 A CN106352999 A CN 106352999A
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- 238000000034 method Methods 0.000 title abstract description 6
- 238000012545 processing Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 60
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 45
- 230000035882 stress Effects 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- 230000008859 change Effects 0.000 claims description 26
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 230000005611 electricity Effects 0.000 claims description 19
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 238000004861 thermometry Methods 0.000 claims description 16
- 238000004062 sedimentation Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 230000006353 environmental stress Effects 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 2
- 206010030113 Oedema Diseases 0.000 claims 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 claims 1
- 208000035475 disorder Diseases 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 241001269238 Data Species 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
The invention provides a temperature measuring method and a temperature measuring device. The temperature measuring structure comprises a measuring circuit and a processing unit; the measuring circuit includes a first branch, a second branch, a first resistor and a second resistor, and resistance of the second resistor is increased with elevation of temperature; the first branch is equal to the second branch in resistance; the first resistor connected with a grounding parallel connection point includes a first resistor grounding terminal directly connected with the grounding parallel connection point and a first resistor non-grounding terminal not directly connected with the grounding parallel connection point; the second resistor connected with the grounding parallel connection point includes a second resistor grounding terminal directly connected with the grounding parallel connection point and a second resistor non-grounding terminal not directly connected with the grounding parallel connection point; the processing unit acquires temperature of the environment that the measuring circuit is located through resistance variation value of the second resistor and fixed relation between the resistance value and the temperature of the second resistor. The temperature measuring method and the temperature measuring device have the advantages that high temperature resistance capability is better as compared with that in the prior art, and stability of steady operation under high temperature is higher.
Description
Technical field
The present invention relates to semiconductor applications are and in particular to a kind of thermometry and temperature measuring structure.
Background technology
It is frequently necessary to by temperature measuring structure come detection temperature in prior art.But existing temperature is surveyed
Amount structure heat resistance poor it is difficult to the higher environment of adaptive temperature, this can lead to its job stability
It is deteriorated, and then lead to its certainty of measurement to be affected.
Further, since these existing temperature sensing circuits are due to the tolerance degree to above-mentioned hot environment
Not high, the service life of these temperature sensing circuits is also not permanent, needs to be replaced as often as possible, this is certain
Cost during the manufacturing and time be increased on degree.
Therefore, how to design a kind of temperature sensing circuit that can bear high temperature and high pressure environment becomes this area
Technical staff's technical problem urgently to be resolved hurrily.
Content of the invention
The problem that the present invention solves is to provide a kind of thermometry and temperature measuring structure, to improve
The certainty of measurement of temperature sensing circuit.
For solving the above problems, the present invention provides a kind of temperature measuring structure, comprising:
Measuring loop, described measuring loop includes:
Tie point and the second branch road, parallel with one another between described tie point and the second branch road, and
There is the first point in parallel and the second point in parallel；One of them of point in parallel with second is put in described first parallel connection
As ground connection point in parallel ground connection；
Described tie point and the second branch road all include the fixing first resistor and at least of some resistances
The second resistance that individual resistance raises with temperature and increases, is in one between the resistance of described second resistance and temperature
Fixed relationship changes, and described second resistance is identical with the resistance of described first resistor in the first temperature；Institute
State tie point and the resistance of the second branch road is equal；
The material of described first resistor is tantalum nitride, and the material of second resistance is titanium nitride；
Tie point includes one directly and the first resistor that is connected of described ground connection point in parallel, described second
Road includes the second resistance that a point in parallel with described ground connection is connected；Or, described tie point includes
One second resistance that directly point in parallel with described ground connection is connected, described second branch road is included one and is connect with described
The first resistor that ground point in parallel is connected；
The first resistor that point in parallel with described ground connection is connected includes and is grounded the first electricity that point in parallel is joined directly together
Hinder the ungrounded end of first resistor that earth terminal and point in parallel with ground connection are not joined directly together；In parallel with described ground connection
The second resistance that point is connected include in parallel with ground connection put the second resistance earth terminal that is joined directly together and be grounded simultaneously
The ungrounded end of second resistance that connection point is not joined directly together；
Processing unit, for according between the ungrounded end of described first resistor and the ungrounded end of second resistance
Voltage difference, and the electricity to obtain described second resistance for the current value of the first point in parallel or the second point in parallel
Resistance changing value, and the resistance of the increased resistance value by described second resistance and second resistance and temperature it
Between fixed relationship, obtain measuring loop local environment temperature.
Optionally, it is provided with a first resistor and a second resistance, described first electricity in described tie point
It is serially connected between resistance and second resistance；
It is provided with a first resistor and a second resistance, described first resistor and second in described second branch road
Resistant series.
Optionally, the temperature-coefficient of electrical resistance of described second resistance is higher than the resistance temperature system of described first resistor
Number.
Optionally, the temperature-coefficient of electrical resistance of described second resistance is 1 × 10-3/ degree Celsius～2 × 10-3/ degree Celsius.
Optionally, the stress of described second resistance is higher than 10gpa.
Optionally, the thickness of described first resistor is more than 125 nanometers.
Additionally, the present invention also provides a kind of thermometry, comprising:
One measuring loop is provided；
Setting tie point and the second branch road in described measuring loop；
Make between described tie point and the second branch road parallel with one another to form the first point in parallel and second
In parallel, and make the described first point in parallel or the second point in parallel as ground connection point in parallel ground connection；
Described tie point and the second branch road are respectively provided with the fixing first resistor of some resistances and
The second resistance that at least one resistance raises with temperature and increases, the resistance of described second resistance and temperature it
Between in one fixed relationship change, described second resistance resistance phase with described first resistor in the first temperature
With；Make the resistance of described tie point and the second branch road equal；
Setting one first resistor that directly point in parallel with described ground connection is connected in described tie point, and
The second resistance that in described second branch road, setting one point in parallel with described ground connection is connected；Or, described
Setting one second resistance that directly point in parallel with described ground connection is connected in one branch road, and in described second branch road
The first resistor that middle setting one point in parallel with described ground connection is connected；
The first resistor that point in parallel with described ground connection is connected is made to include in parallel with ground connection putting first being joined directly together
Resistance eutral grounding end and in parallel put the ungrounded end of first resistor that is not joined directly together with being grounded；And make to connect with described
The second resistance that ground point in parallel is connected include in parallel with ground connection put the second resistance earth terminal being joined directly together and with
The ungrounded end of second resistance that ground connection point in parallel is not joined directly together；
By described measuring loop be positioned over one be higher than the first temperature environment；
Obtain the voltage difference between the ungrounded end of described first resistor and the ungrounded end of second resistance；
Obtain the first point in parallel or the current value of the second point in parallel；
It is worth to the increased resistance value of described second resistance by described voltage difference and electric current；
By the fixation between the increased resistance value of described second resistance and the resistance of second resistance and temperature
Relation, obtains the temperature of measuring loop local environment.
Optionally, it is respectively provided with first resistor and second resistance in tie point and the second branch road
Step includes:
One first resistor and a second resistance are set in described tie point, and make described first resistor
And be serially connected between second resistance；
One first resistor and a second resistance are set in described second branch road, and make described first resistor
Connect with second resistance.
Optionally, it is respectively provided with first resistor and second resistance in tie point and the second branch road
Step includes: makes the resistance temperature system higher than described first resistor for the temperature-coefficient of electrical resistance of described second resistance
Number.
Optionally, the temperature-coefficient of electrical resistance of second resistance is 1 × 10-3/ degree Celsius～2 × 10-3/ degree Celsius.
Optionally, it is respectively provided with first resistor and second resistance in tie point and the second branch road
Step includes: using tantalum nitride as described first resistor material, and using titanium nitride as described the
The material of two resistance.
Optionally, setting stress is higher than the second resistance of 10gpa.
Optionally, form the first resistor that thickness is more than 125 nanometers.
Optionally, it is respectively provided with first resistor and second resistance in tie point and the second branch road
Step includes: forms described first resistor and second resistance by the way of sputtering sedimentation.
Optionally, the step forming first resistor includes: using the target of tantalum material, with nitrogen as anti-
Answer gas, nitrogen partial pressure is in the range of 1.7～1.9pa；The environmental stress making sputtering sedimentation is in 2.2～2.4pa
In the range of, ambient temperature is in the range of 340～360 degrees Celsius；The power of sputtering deposition device is made to exist
In the range of 0.4～0.6kw, bias voltage is 0；
The step forming second resistance includes: using the target of titanium material, with nitrogen as reacting gas,
Nitrogen partial pressure is in the range of 0.3～0.5pa；Make the scope in 0.4～0.6pa for the environmental stress of sputtering sedimentation
Interior, ambient temperature is in the range of 340～360 degrees Celsius；Make the power of sputtering deposition device 11～
In the range of 13kw, bias voltage is 0.
Compared with prior art, technical scheme has the advantage that
The temperature measuring structure of the present invention comprises the tie point being arranged in parallel and the second branch road, and described
Be respectively arranged with tie point and the second branch road the fixing first resistor of some resistances and at least one
The second resistance that resistance raises with temperature and increases, the resistance of tie point and the second branch road is equal；This
Bright measuring loop is used for by the first end resistance in tie point and the second branch road or the second end
Voltage difference between portion's resistance, and the electric current of the first point in parallel or the second point in parallel is worth to described the
The increased resistance value of two resistance, and the resistance of the increased resistance value by described second resistance and second resistance
Fixed relationship between value and temperature, obtains the temperature of measuring loop local environment.First point in parallel or
First end resistance in the current value of the second point in parallel, tie point and the second branch road or the second end
Voltage difference between portion's resistance is easy to record in practical operation, and because the resistance of second resistance is with temperature
Degree raises and increases, and the relation between its resistance and temperature is fixed, so can be more accurate obtain
The temperature of the environment residing for the temperature measuring structure of the present invention.And, this structure itself relies on temperature
Rise and then change the resistance of second resistance, and then be back-calculated to obtain ambient temperature, its resistant to elevated temperatures ability phase
Compared with prior art more preferably, steady operation stability at high temperature is also higher.
Brief description
Fig. 1 to Fig. 4 is the schematic diagram in temperature measuring structure one embodiment of the present invention.
Specific embodiment
Temperature measuring structure of the prior art is poor for the tolerance degree of high temperature, and this not only results in it
Measurement bad stability and then impact certainty of measurement, also result in its service life step-down, need often more
Change, such production cost also can increase.
For this reason, the present invention provides a kind of temperature measuring structure, comprising:
Measuring loop, described measuring loop includes:
Tie point and the second branch road, parallel with one another between described tie point and the second branch road, and
There is the first point in parallel and the second point in parallel；One of them of point in parallel with second is put in described first parallel connection
As ground connection point in parallel ground connection；
Described tie point and the second branch road all include the fixing first resistor and at least of some resistances
The second resistance that individual resistance raises with temperature and increases, is in one between the resistance of described second resistance and temperature
Fixed relationship changes, and described second resistance is identical with the resistance of described first resistor in the first temperature；Institute
State tie point and the resistance of the second branch road is equal；
The material of described first resistor is tantalum nitride, and the material of second resistance is titanium nitride；
Tie point includes one directly and the first resistor that is connected of described ground connection point in parallel, described second
Road includes the second resistance that a point in parallel with described ground connection is connected；Or, described tie point includes
One second resistance that directly point in parallel with described ground connection is connected, described second branch road is included one and is connect with described
The first resistor that ground point in parallel is connected；
The first resistor that point in parallel with described ground connection is connected includes and is grounded the first electricity that point in parallel is joined directly together
Hinder the ungrounded end of first resistor that earth terminal and point in parallel with ground connection are not joined directly together；In parallel with described ground connection
The second resistance that point is connected include in parallel with ground connection put the second resistance earth terminal that is joined directly together and be grounded simultaneously
The ungrounded end of second resistance that connection point is not joined directly together；
Processing unit, for according between the ungrounded end of described first resistor and the ungrounded end of second resistance
Voltage difference, and the electricity to obtain described second resistance for the current value of the first point in parallel or the second point in parallel
Resistance changing value, and the resistance of the increased resistance value by described second resistance and second resistance and temperature it
Between fixed relationship, obtain measuring loop local environment temperature.
The measuring loop of the present invention is used for according between the ungrounded end of first resistor and the ungrounded end of second resistance
Voltage difference, and the electric current of the first point in parallel or the second point in parallel is worth to the electricity of described second resistance
Resistance changing value, and the resistance of the increased resistance value by described second resistance and second resistance is with temperature liter
High and increase, and the fixed relationship and temperature between, obtain the temperature of measuring loop local environment.First
First resistor in the current value of point in parallel or the second point in parallel, tie point and the second branch road is non-to be connect
Voltage difference between ground terminal and the ungrounded end of second resistance is easy to record in practical operation, and due to
The increased resistance value of two resistance is fixed with the relation of temperature, so can be more accurate obtain the present invention's
The temperature of the environment residing for temperature measuring structure.And, the measuring loop of this present invention relies on temperature in itself
The rising of degree and then the resistance of change second resistance, and then it is back-calculated to obtain ambient temperature, its resistant to elevated temperatures energy
Compared to prior art more preferably, steady operation stability at high temperature is also higher for power.
Understandable for enabling the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings
The specific embodiment of the present invention is described in detail.
Refer to Fig. 1 to Fig. 4, be the schematic diagram in temperature measuring structure one embodiment of the present invention.
Referring first to Fig. 1, in the present embodiment, described temperature measuring structure includes:
Measuring loop 100, described measuring loop 100 includes:
Tie point 110 and the second branch road 120, between described tie point 110 and the second branch road 120
Parallel with one another, and there is the first point a and second parallel connection point c in parallel；Wherein, the described first point a in parallel
One of them of point c in parallel with second is as ground connection point in parallel ground connection.
Specifically, in the present embodiment, point a in parallel is used for being passed through electric current i, and point c in parallel is used for being grounded,
For ground connection point in parallel.But it is as it was noted above, in other embodiments of the invention or described
Point a in parallel is used for being grounded, and described parallel connection point c is passed through electric current i.
The resistance of described tie point 110 and the second branch road 120 is equal, the electricity being so passed through in point a in parallel
Stream i will fifty-fifty distribute to tie point 110 and the second branch road 120 that is to say, that described tie point
110 and the respective size of current of the second branch road 120 be 2/i.
Described tie point 110 and the second branch road 120 include the fixing first resistor 60 of some resistances respectively
(for example, as r2 and r3 in Fig. 1 in the present embodiment) and at least one resistance raise with temperature and increase
Second resistance 50 (r1 and r4 as in Fig. 1), wherein, described second resistance 50 at the first temperature with
The resistance of first resistor 60 is equal, and, when temperature is higher than described first temperature, described second resistance
To change in a fixed relationship between 50 resistance and temperature.The change of the resistance according to second resistance 50 with
Relation between temperature extrapolates the temperature of test loop local environment.Concrete mode will be carried out later in detail
Describe in detail bright.
Specifically, in the present embodiment, the resistance of described second resistance 50 raises with temperature and increases.
Specifically, described first temperature can be room temperature in the present embodiment, that is, about 25 is Celsius
The scope of degree.In the range of room temperature, the resistance of described second resistance 50 is identical with described first resistor 60,
For the ease of description, the resistance size of first resistor under room temperature 60 and second resistance 50 is represented with r.Work as temperature
When degree is higher than room temperature, the resistance of second resistance 50 increases, and is changed into r+ δ r, and wherein δ r is second resistance 50
Increased resistance value.
Further, in the present embodiment, fix to reach the resistance making first resistor 60, that is,
Substantially do not vary with temperature, so that the resistance of second resistance 50 is raised with the rising of temperature simultaneously, permissible
Using the material compared with low resistance temperature coefficient (temperature coefficient of resistance, tcr)
Form described first resistor 60, form described second using the of a relatively high material of temperature-coefficient of electrical resistance simultaneously
Resistance 50.
Incorporated by reference to reference Fig. 2, it is first resistor 60 and the resistance change rate of second resistance 50 and the relation of temperature
Figure, the wherein longitudinal axis are resistance change rate, and transverse axis is temperature, and line segment 11 and 12 represents second resistance 50 respectively
Relation with first resistor 60 and temperature.It can be seen that temperature-coefficient of electrical resistance of a relatively high
Two resistance 50 (line segment 11) are gradually increased with the rising of temperature, its resistance change rate；And for first
Resistance 60 (line segment 12), because temperature-coefficient of electrical resistance is relatively small or even close to zero, the change of temperature
The change of its resistance is generally affected less.
For example, in the present embodiment, can be 1 × 10 using temperature-coefficient of electrical resistance scope-3/ degree Celsius～
2×10-3/ degree Celsius second resistance 50.
In the present embodiment, described second resistance 50 can be formed using titanium nitride material.Its reason is,
Titanium nitride material has of a relatively high temperature-coefficient of electrical resistance.
And, titanium nitride itself fusing point higher (about 2950 degrees Celsius), its own has preferably resistance to
High temperature capabilities, are conducive to increasing the high temperature tolerance degree of temperature measuring structure further.Meanwhile, titanium nitride
It is common materials in semiconductor applications, be also easier to obtain, this will not increase the difficulty of the manufacturing substantially
Degree.
Further, in the present embodiment, the titanium nitride material that can make the described second resistance of formation 50 has
Higher stress, specifically, the structure with the titanium nitride of higher stress is more special, with other materials
Material or stress is relatively low or even titanium nitride material that substantially do not have stress is compared, stress relatively low (or even
Substantially there is no stress) titanium nitride material in can discharge containing more hole (void), these holes
So that the overall stress of titanium nitride reduces, these holes can make electronics scatter to stress simultaneously, and then
Increase the resistance of titanium nitride, its more crystal boundary also can increase resistance sizes to a certain extent.Namely
Say, the resistance of the relatively low titanium nitride of this stress is mainly produced by these holes, and its resistance is similar to one
Kind of material per se with resistance, the relation of its resistance and temperature less, the electricity of therefore this titanium nitride
Resistance temperature coefficient is very low or even levels off to zero.
By contrast, having in the titanium nitride of higher stress employed in this enforcement lacks hole, due to
Lack hole to buffer stress or to make electronics scatter, the resistance of therefore this heavily stressed titanium nitride
Affected be more susceptible to temperature, therefore its temperature-coefficient of electrical resistance is higher with respect to the titanium nitride of low stress.
When temperature raises, atomic vibration frequency in this heavily stressed titanium nitride increases, to conducting in it
In electron-blocking capacity become strong, thus resistance becomes big.
In the present embodiment, in order to make the stress of heavily stressed titanium nitride sufficiently high as far as possible, higher to obtain
Temperature-coefficient of electrical resistance, can using stress be higher than 10gpa titanium nitride material form described second resistance
50.
Meanwhile, the temperature-coefficient of electrical resistance of described first resistor 60 then should select alap material,
In order in the calculation the resistance of first resistor 60 be regarded as a constant and then convenient calculating second resistance 50
Increased resistance value.For example, in the present embodiment, can be from temperature-coefficient of electrical resistance in ppm magnitude
Material.
Specifically, the present embodiment can select tantalum nitride as the material of described first resistor 60.This
The temperature-coefficient of electrical resistance of material is with respect to the second resistance 50 of the titanium nitride material employed in the present embodiment
Less for temperature-coefficient of electrical resistance, first resistor 60 temperature-coefficient of electrical resistance with about in 20ppm magnitude.
And, the fusing point of tantalum nitride is at 3090 degrees Celsius that is to say, that there being tantalum-nitride material to be formed
First resistor 60 has good resistance to elevated temperatures, and its resistant to elevated temperatures ability is more preferable compared to prior art,
Steady operation stability at high temperature is also higher.And, tantalum nitride is common materials in semiconductor applications,
Also it is easier to obtain, this will not increase the difficulty of the manufacturing substantially.
Incorporated by reference to reference to Fig. 3, be tantalum nitride in different-thickness, its sheet resistance size (line segment 22)
And temperature-coefficient of electrical resistance size (segment 23).It can be seen that being that the thickness of tantalum nitride exists at that time
When more than about 125 nanometers, the change of its sheet resistance is less, and its temperature-coefficient of electrical resistance size variation
Also become less.
Therefore, in the present embodiment, the thickness of described first resistor 60 should be greater than 125 nanometers.So may be used
So that the sheet resistance change of the first resistor 60 of tantalum-nitride material is less, temperature-coefficient of electrical resistance change is less.
In the present embodiment, it is provided with one respectively in described tie point 110 and the second branch road 120
One resistance 60 and a second resistance 50, described first resistor 60 is connected with second resistance 50.Namely
Say, described tie point 110 and the second branch road 120 respectively comprise two resistance (one first electricity
Resistance 60 and a second resistance 50).
As it was noted above, in the present embodiment, point c in parallel is ground connection point in parallel.In tie point 110
Including one, directly (first resistor 60 that point c) in parallel is joined directly together, specifically comes with described ground connection point in parallel
Say as r2；Meanwhile, described second branch road 120 include one with described ground connection point in parallel (parallel connection point c)
The second resistance 50 being joined directly together.
But, whether the present invention is joined directly together to point in parallel with described ground connection in tie point 110 necessary
For in first resistor 60, or the second branch road 120 with described ground connection in parallel put be joined directly together whether necessary
Be not construed as limiting for second resistance 50, in other embodiments of the invention or: described first
Road 110 includes a second resistance 50 that directly point in parallel with described ground connection is connected, described second branch road 120
Include the first resistor 60 that a point in parallel with described ground connection is connected.
Specifically, the first resistor 60 that point in parallel with described ground connection is connected includes and is grounded the direct phase of point in parallel
First resistor 60 earth terminal even and be grounded the first resistor 60 ungrounded end put and be not joined directly together in parallel；
The second resistance 50 that point in parallel with described ground connection is connected includes and is grounded the second resistance that point in parallel is joined directly together
Earth terminal and point in parallel with ground connection are not joined directly together the ungrounded end of second resistance 50.
Herein it should be noted that the present invention is specifically provided with to tie point 110 and the second branch road 120
How to arrange between how many first resistors 60 and second resistance 50, first resistor 60 and second resistance 50
Row are not limited in any way, because it is contemplated that two in measurement tie point 110 and the second branch road 120
The respective ungrounded end of individual resistance (the of the first ungrounded end of first resistor 60 and second resistance 50
Two ungrounded ends) between voltage difference, in order to obtain described voltage difference, should comprise in this two resistance
One first resistor 60 and a second resistance 50, and tie point 110 and the second branch road 120
Resistance summation is equal to can reach the purpose of the present invention.Therefore, in other embodiments of the invention, institute
Stating can each self-contained multiple, first resistor 60 and in tie point 110 and the second branch road 120
Two resistance 50.
In conjunction with reference Fig. 4, when described temperature measuring structure is put in the middle of certain environment higher than room temperature,
The resistance of second resistance 50 raises, and for the ease of distinguishing, the second resistance 50 of change in resistance is labeled as
R1` and r4`.
The measuring loop 100 of the present invention also includes processing unit (not shown), and described processing unit is used
In in parallel putting the ungrounded end of first resistor 60 being joined directly together and second resistance 50 is non-connects according to being grounded
Voltage difference between ground terminal, and described in the electric current of the first point a in parallel or the second point c in parallel is worth to
The increased resistance value of second resistance 50, and the increased resistance value and second by described second resistance 50
Fixed relationship between the resistance of resistance 50 and temperature, obtains the temperature of measuring loop 100 local environment.
Concrete calculating process is as follows:
In the present embodiment, can be connect with cut-off and be grounded the ungrounded end of resistance r2 and r4 that point in parallel is connected
Between voltage difference, that is, the voltage difference δ v between 2 points of b, d.Described voltage difference is in practical operation
In be easier obtain, can directly record for example with instruments such as electroprobes.
Then, obtain the size of the electric current i being passed through described measuring loop 100.Likewise, in practical operation
During, the size of electric current i can also be passed through the instruments such as electroprobe and more easily obtain.
Because the resistance sizes of tie point 110 and the second branch road 120 are equal, therefore tie point 110
And the respective circuit of the second branch road 120 is 2/i.
Therefore obtain below equation:
Formula is deformed, obtain calculate second resistance 50 increased resistance value δ r formula:
As it was noted above, the size of i and δ v can directly obtain, therefore can obtain higher than the first temperature
At a temperature of certain of degree, the increased resistance value δ r of second resistance 50.
As it was noted above, due to fixing closing in one between the increased resistance value δ r of second resistance 50 and temperature
System, by between the increased resistance value of described second resistance 50 and the resistance of second resistance 50 and temperature
Fixed relationship just can obtain the temperature of measuring loop 100 local environment.
It should be noted that the present invention is to the increased resistance value δ r how obtaining second resistance 50 and temperature
Between fixed relationship do not repeat, because described fixed relationship is straight with the material of resistance in practical operation
Connect correlation, and can be directly obtained by modes such as experiment, inquiry available datas, therefore, at this
In bright, described fixed relationship is known quantity.
Additionally, the present invention also provides a kind of thermometry, described measuring method may be referred to Fig. 1 extremely
Fig. 4；Described kind of thermometry comprises the following steps:
One measuring loop 100 is provided；
Setting tie point 110 and the second branch road 120 in described measuring loop 100；
Make between described tie point 110 and the second branch road 120 parallel with one another to form the first point a in parallel
And the second point c in parallel, and make the described first point a point in parallel with second c in parallel one of conduct
Ground connection point in parallel ground connection；
Specifically, in the present embodiment, point a in parallel is used for being passed through electric current i, and point c in parallel is used for being grounded,
For ground connection point in parallel.
It is respectively provided with the first of some resistances fixations in described tie point 110 and the second branch road 120
Resistance 60 and at least one resistance raise and the second resistance 50 of increase, described second resistance with temperature
It is in a fixed relationship change between 50 resistance and temperature, described second resistance 50 is in the first temperature and institute
The resistance stating first resistor 60 is identical；Make described tie point 110 and the resistance phase of the second branch road 120
Deng；
In the present embodiment, described first temperature can be room temperature in the present embodiment, that is, about 25
Degree Celsius scope.In the range of room temperature, the resistance of described second resistance 50 and described first resistor 60
Identical, for the ease of description, by the resistance size r of first resistor under room temperature 60 and second resistance 50
Represent.When the temperature is higher than the room temperature, the resistance of second resistance 50 increases, and is changed into r+ δ r, wherein δ r
Changing value for the resistance of second resistance 50.
Further, in the present embodiment, fix to reach the resistance making first resistor 60, that is,
Substantially do not vary with temperature, so that the resistance of second resistance 50 is raised with the rising of temperature simultaneously, permissible
Using the material shape compared with low resistance temperature coefficient (temperature coefficient of resistance, tcr)
Become described first resistor 60, described second electricity is formed using the of a relatively high material of temperature-coefficient of electrical resistance simultaneously
Resistance 50.
For example, in the present embodiment, can be 1 × 10 using temperature-coefficient of electrical resistance scope-3/ degree Celsius～
2×10-3/ degree Celsius second resistance 50.
In the present embodiment, the second resistance 50 of titanium nitride material can be adopted, its reason is, nitridation
Titanium material has of a relatively high temperature-coefficient of electrical resistance.
And, titanium nitride itself fusing point higher (about 2950 degrees Celsius), its own has preferably resistance to
High temperature capabilities, are conducive to increasing the high temperature tolerance degree of temperature measuring structure further.Meanwhile, titanium nitride
It is common materials in semiconductor applications, be also easier to obtain, this will not increase the difficulty of the manufacturing substantially
Degree.
Further, in the present embodiment, the titanium nitride material that can make the described second resistance of formation 50 has
Higher stress, specifically, the structure with the titanium nitride of higher stress is more special, with other materials
Material or stress is relatively low or even titanium nitride material that substantially do not have stress is compared, stress relatively low (or even
Substantially there is no stress) titanium nitride material in can discharge containing more hole (void), these holes
So that the overall stress of titanium nitride reduces, these holes can make electronics scatter to stress simultaneously, and then
Increase the resistance of titanium nitride, its more crystal boundary also can increase resistance sizes to a certain extent.Namely
Say, the resistance of the relatively low titanium nitride of this stress is mainly produced by these holes, and its resistance is similar to one
Kind of material per se with resistance, the relation of its resistance and temperature less, the electricity of therefore this titanium nitride
Resistance temperature coefficient is very low or even levels off to zero.
By contrast, having in the titanium nitride of higher stress employed in this enforcement lacks hole, due to
Lack hole to buffer stress or to make electronics scatter, the resistance of therefore this heavily stressed titanium nitride
Affected be more susceptible to temperature, therefore its temperature-coefficient of electrical resistance is higher with respect to the titanium nitride of low stress.
When temperature raises, atomic vibration frequency in this heavily stressed titanium nitride increases, to conducting in it
In electron-blocking capacity become strong, thus resistance becomes big.
In the present embodiment, in order to make the stress of heavily stressed titanium nitride sufficiently high as far as possible, higher to obtain
Temperature-coefficient of electrical resistance, can using stress be higher than 10gpa titanium nitride material form described second resistance
50.
In the present embodiment, described second resistance 50 can be formed by way of sputtering sedimentation, and pass through
Change parameters in sputter deposition process forming the titanium nitride with higher stress.
Specifically, it is possible to use the target of titanium material, with nitrogen as reacting gas, nitrogen partial pressure 0.3～
In the range of 0.5pa；In the range of 0.4～0.6pa, ambient temperature exists the environmental stress making sputtering sedimentation
In the range of 340～360 degrees Celsius；The power making sputtering deposition device in the range of 11～13kw,
Bias voltage is 0.
Specifically, nitrogen partial pressure can be 0.41pa, and environmental stress is 0.53pa, and ambient temperature is 350
Degree Celsius, the power of sputtering deposition device is 12kw；
As can be seen that when forming the heavily stressed titanium nitride of second resistance 50, making the power of sputtering deposition device
Become of a relatively high, environmental stress and nitrogen partial pressure become relatively small advantageously form dense,
The less heavily stressed titanium nitride of hole.
Meanwhile, the temperature-coefficient of electrical resistance of described first resistor 60 then should select alap material,
In order in the calculation the resistance of first resistor 60 be regarded as a constant and then convenient calculating second resistance 50
Increased resistance value.For example, in the present embodiment, can be from temperature-coefficient of electrical resistance in ppm magnitude
Material.
Specifically, the present embodiment can select tantalum nitride as the material of described first resistor 60.This
The temperature-coefficient of electrical resistance of material is with respect to the second resistance 50 of the titanium nitride material employed in the present embodiment
Less for temperature-coefficient of electrical resistance, first resistor 60 temperature-coefficient of electrical resistance with about in 20ppm magnitude.
And, the fusing point of tantalum nitride is at 3090 degrees Celsius that is to say, that there being tantalum-nitride material to be formed
First resistor 60 has good resistance to elevated temperatures, and its resistant to elevated temperatures ability is more preferable compared to prior art,
Steady operation stability at high temperature is also higher.And, tantalum nitride is common materials in semiconductor applications,
Also it is easier to obtain, this will not increase the difficulty of the manufacturing substantially.
In the present embodiment, the thickness of described first resistor 60 should be greater than 125 nanometers.Nitrogen so can be made
The sheet resistance change of the first resistor 60 of change tantalum material is less, temperature-coefficient of electrical resistance change is less.
In the present embodiment, the first electricity of described tantalum-nitride material can be formed in the way of using sputtering sedimentation
Resistance 60, the first resistor 60 of the tantalum-nitride material so being formed has less sheet resistance change and electricity
Resistance temperature coefficient change.
Specifically, it is possible to use the target of tantalum material, with nitrogen as reacting gas, nitrogen partial pressure 1.7～
1.9pa in the range of；In the range of 2.2～2.4pa, ambient temperature exists the environmental stress making sputtering sedimentation
In the range of 340～360 degrees Celsius；The power making sputtering deposition device in the range of 0.4～0.6kw,
Bias voltage is 0；
Specifically, nitrogen partial pressure can be 1.8pa, and environmental stress is 2.3pa, and ambient temperature is taken the photograph for 350
Family name's degree, the power of sputtering deposition device is 0.5kw.
In the present embodiment, setting one the in described tie point 110 and the second branch road 120 respectively
One resistance 60 and a second resistance 50, described first resistor 60 is connected with second resistance 50.Namely
Say, make to comprise two resistance (first respectively in described tie point 110 and the second branch road 120
Resistance 60 and a second resistance 50).
Describe for convenience, setting one directly point phase in parallel with described ground connection in described tie point 110
First resistor 60 even, and setting one point c in parallel with described ground connection is connected in described second branch road 120
Second resistance 50.
But, whether the present invention is joined directly together to point in parallel with described ground connection in tie point 110 necessary
For in first resistor 60, or the second branch road 120 with described ground connection in parallel put be joined directly together whether necessary
Be not construed as limiting for second resistance 50, in other embodiments of the invention or: described first
In branch road 110 setting one directly and the second resistance 50 that is connected of described ground connection point in parallel, and described second
The first resistor 60 that in branch road 120, setting one point in parallel with described ground connection is connected；
The first resistor 60 that point in parallel with described ground connection is connected is made to include in parallel with ground connection putting the being joined directly together
One resistance 60 earth terminal and in parallel put the ungrounded end of first resistor 60 that is not joined directly together with being grounded；And make
The second resistance 50 that point in parallel with described ground connection is connected includes and is grounded the second resistance that point in parallel is joined directly together
50 earth terminals and in parallel put the ungrounded end of second resistance 50 that is not joined directly together with being grounded；
Make the resistance of described tie point 110 and the second branch road 120 equal, so that through tie point
110 and second branch road 120 size of current equal.
Described measuring loop 100 is positioned in an environment being higher than the first temperature, now second resistance 50
Resistance increase, be changed into r+ δ r；
Obtain the voltage between the ungrounded end of described first resistor 60 and the ungrounded end of second resistance 50
Difference δ v；Specifically, the electricity between the voltage difference between r2 and r4, that is, 2 points of b, d can be taken
Pressure reduction δ v.Described voltage difference is easier to obtain in practical operation, permissible for example with instruments such as electroprobes
Directly record.
Obtain the current value of the first point a or second parallel connection point c in parallel；Likewise, in practical operation
The size of Cheng Zhong, electric current i can also be passed through the instruments such as electroprobe and more easily obtain.
Because the resistance sizes of tie point 110 and the second branch road 120 are equal, therefore tie point 110
And the respective circuit of the second branch road 120 is 2/i.
Therefore obtain below equation:
Formula is deformed, obtain calculate second resistance 50 change in resistance amount δ r formula:
Obtain the increased resistance value δ r of described second resistance 50 by described voltage difference δ v and current value i；
As it was noted above, due to fixing closing in one between the change in resistance value δ r of second resistance 50 and temperature
System, therefore, by the increased resistance value of described second resistance 50 and the resistance of second resistance 50 and temperature
Fixed relationship between degree, it is possible to obtain the temperature of measuring loop 100 local environment.
It should be noted that the present invention is to the increased resistance value δ r how obtaining second resistance 50 and temperature
Between fixed relationship do not repeat, because described fixed relationship is straight with the material of resistance in practical operation
Connect correlation, and can be directly obtained by modes such as experiment, inquiry available datas, therefore, at this
In bright, described fixed relationship is known quantity.
By the ungrounded end of first resistor 60 in tie point 110 and the second branch road 120 and the second electricity
Hinder the voltage difference between 50 ungrounded ends, and the current value of the first point a or second parallel connection point c in parallel
Obtain the increased resistance value of described second resistance 50, and the increased resistance value by described second resistance 50
And the fixed relationship between the resistance of second resistance 50 and temperature, obtain the temperature of measuring loop local environment
Degree.The current value of the first point a in parallel or the second parallel connection point c and the ungrounded end of first resistor 60 and the
Voltage difference between the ungrounded end of two resistance 50 is easy to record in practical operation, and due to second resistance
50 change in resistance is fixed with the relation of temperature, and the temperature obtaining the present invention that so can be more accurate is surveyed
The temperature of the environment residing for amount structure.And, this structure itself relies on the rising of temperature and then changes the
The resistance of two resistance 50, and then it is back-calculated to obtain ambient temperature, its resistant to elevated temperatures ability is compared to prior art
More preferably, steady operation stability at high temperature is also higher.
Additionally, the thermometry of the present invention can be, but not limited to obtain using above-mentioned temperature measuring structure
Arrive.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, all can make various changes or modifications, therefore the guarantor of the present invention
Shield scope should be defined by claim limited range.
Claims (15)
1. a kind of temperature measuring structure is it is characterised in that include:
Measuring loop, described measuring loop includes:
Tie point and the second branch road, parallel with one another between described tie point and the second branch road, and have
There are the first point in parallel and the second point in parallel；One of them of point in parallel with second is put in described first parallel connection
As ground connection point in parallel ground connection；
Described tie point and the second branch road all include the fixing first resistor of some resistances and at least one
The second resistance that resistance raises with temperature and increases, is in one between the resistance of described second resistance and temperature
Fixed relationship changes, and described second resistance is identical with the resistance of described first resistor in the first temperature；
The resistance of described tie point and the second branch road is equal；
The material of described first resistor is tantalum nitride, and the material of second resistance is titanium nitride；
Tie point includes a first resistor that directly point in parallel with described ground connection is connected, described second branch road
Include the second resistance that a point in parallel with described ground connection is connected；Or, described tie point includes
One directly and the second resistance that is connected of described ground connection point in parallel, described second branch road include one with described
The first resistor that ground connection point in parallel is connected；
The first resistor that point in parallel with described ground connection is connected includes and is grounded the first resistor that point in parallel is joined directly together
Earth terminal and in parallel put the ungrounded end of first resistor that is not joined directly together with being grounded；In parallel with described ground connection
The second resistance that point is connected include in parallel with ground connection put the second resistance earth terminal that is joined directly together and with ground connection
The ungrounded end of second resistance that point in parallel is not joined directly together；
Processing unit, for according to the electricity between the ungrounded end of described first resistor and the ungrounded end of second resistance
Pressure reduction, and the electricity to obtain described second resistance for the current value of the first point in parallel or the second point in parallel
Resistance changing value, and the resistance of the increased resistance value by described second resistance and second resistance and temperature
Between fixed relationship, obtain measuring loop local environment temperature.
2. temperature measuring structure as claimed in claim 1 is it is characterised in that be provided with one in described tie point
First resistor and a second resistance, are serially connected between described first resistor and second resistance；
It is provided with a first resistor and a second resistance, described first resistor and the second electricity in described second branch road
Resistance series connection.
3. temperature measuring structure as claimed in claim 1 is it is characterised in that the resistance temperature of described second resistance
Degree coefficient is higher than the temperature-coefficient of electrical resistance of described first resistor.
4. temperature measuring structure as claimed in claim 1 is it is characterised in that the resistance temperature of described second resistance
Degree coefficient is 1 × 10-3/ degree Celsius～2 × 10-3/ degree Celsius.
5. temperature measuring structure as claimed in claim 1 is it is characterised in that the stress of described second resistance is high
In 10gpa.
6. temperature measuring structure as claimed in claim 1 is it is characterised in that the thickness of described first resistor is big
In 125 nanometers.
7. a kind of thermometry is it is characterised in that include:
One measuring loop is provided；
Setting tie point and the second branch road in described measuring loop；
Make between described tie point and the second branch road parallel with one another to form the first point in parallel and second simultaneously
Connection point, and make the described first point in parallel or the second point in parallel as ground connection point in parallel ground connection；
It is respectively provided with the fixing first resistor of some resistances and extremely in described tie point and the second branch road
The second resistance that a few resistance raises with temperature and increases, the resistance of described second resistance and temperature it
Between in a fixed relationship change, described second resistance in the first temperature with the resistance of described first resistor
Identical；Make the resistance of described tie point and the second branch road equal；
Setting one first resistor that directly point in parallel with described ground connection is connected in described tie point, and in institute
State the second resistance that the point in parallel with described ground connection of setting one in the second branch road is connected；Or, described
Setting one second resistance that directly point in parallel with described ground connection is connected in one branch road, and at described second
The first resistor that in road, setting one point in parallel with described ground connection is connected；
So that the first resistor that point in parallel with described ground connection is connected is included and be grounded the first electricity that point in parallel is joined directly together
Hinder the ungrounded end of first resistor that earth terminal and point in parallel with ground connection are not joined directly together；And make to connect with described
The second resistance that ground point in parallel is connected include in parallel with ground connection put the second resistance earth terminal being joined directly together and
The ungrounded end of second resistance that point in parallel with ground connection is not joined directly together；
By described measuring loop be positioned over one be higher than the first temperature environment；
Obtain the voltage difference between the ungrounded end of described first resistor and the ungrounded end of second resistance；
Obtain the first point in parallel or the current value of the second point in parallel；
It is worth to the increased resistance value of described second resistance by described voltage difference and electric current；
By the fixing pass between the increased resistance value of described second resistance and the resistance of second resistance and temperature
System, obtains the temperature of measuring loop local environment.
8. thermometry as claimed in claim 7 is it is characterised in that in tie point and second
It is respectively provided with first resistor in road and the step of second resistance includes:
One first resistor and a second resistance are set in described tie point, and make described first resistor with
And be serially connected between second resistance；
One first resistor and a second resistance are set in described second branch road, and make described first resistor with
Second resistance is connected.
9. thermometry as claimed in claim 7 is it is characterised in that in tie point and second
It is respectively provided with first resistor in road and the step of second resistance includes: make the resistance of described second resistance
Temperature coefficient is higher than the temperature-coefficient of electrical resistance of described first resistor.
10. thermometry as claimed in claim 9 is it is characterised in that the resistance temperature system of second resistance
Number is 1 × 10-3/ degree Celsius～2 × 10-3/ degree Celsius.
11. thermometries as claimed in claim 7 are it is characterised in that in tie point and second
It is respectively provided with first resistor in road and the step of second resistance includes: using tantalum nitride as described
The material of one resistance, and adopt titanium nitride as the material of described second resistance.
12. thermometries as claimed in claim 11 are it is characterised in that setting stress is higher than 10gpa
Second resistance.
13. thermometries as claimed in claim 11 are more than 125 nanometers it is characterised in that forming thickness
First resistor.
14. thermometries as claimed in claim 11 are it is characterised in that in tie point and second
It is respectively provided with first resistor in road and the step of second resistance includes: shape by the way of sputtering sedimentation
Become described first resistor and second resistance.
15. thermometries as claimed in claim 14 are it is characterised in that form the step bag of first resistor
Include: using the target of tantalum material, with nitrogen as reacting gas, nitrogen partial pressure is 1.7～1.9pa's
In the range of；The environmental stress making sputtering sedimentation in the range of 2.2～2.4pa, ambient temperature 340～
In the range of 360 degrees Celsius；The power making sputtering deposition device in the range of 0.4～0.6kw, partially
Putting voltage is 0；
The step forming second resistance includes: using the target of titanium material, with nitrogen as reacting gas, nitrogen
Edema caused by disorder of QI is pressed in the range of 0.3～0.5pa；Make the model in 0.4～0.6pa for the environmental stress of sputtering sedimentation
In enclosing, ambient temperature is in the range of 340～360 degrees Celsius；The power of sputtering deposition device is made to exist
In the range of 11～13kw, bias voltage is 0.
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