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CN106350768A - Metal mask for vapor deposition and method for manufacturing metal mask for vapor deposition - Google Patents

Metal mask for vapor deposition and method for manufacturing metal mask for vapor deposition Download PDF

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Publication number
CN106350768A
CN106350768A CN201610561108.7A CN201610561108A CN106350768A CN 106350768 A CN106350768 A CN 106350768A CN 201610561108 A CN201610561108 A CN 201610561108A CN 106350768 A CN106350768 A CN 106350768A
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Prior art keywords
mask
vapor deposition
metal
frame
contact surface
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Inventor
田村纯香
新纳干大
藤户大生
西辻清明
西刚广
三上菜穗子
仓田真嗣
武田宪太
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Toppan Inc
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Toppan Printing Co Ltd
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Priority to CN202311802064.9A priority Critical patent/CN117821896A/en
Publication of CN106350768A publication Critical patent/CN106350768A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention provides a metal mask for vapor deposition and a method for manufacturing the metal mask for vapor deposition, which can improve both the structural accuracy of a pattern formed by vapor deposition and the operability of the metal mask for vapor deposition. The disclosed device is provided with: a mask section (32) which has a contact surface for contacting a deposition target and a non-contact surface on the opposite side of the contact surface, is formed in a sheet shape, and has a plurality of mask holes that penetrate from first openings located on the contact surface to second openings located on the non-contact surface, respectively, wherein the first openings are smaller in size than the second openings; and a mask frame (31) having higher rigidity than the mask portion and formed in a frame shape surrounding the plurality of mask holes. The mask portion (32) has a portion surrounding the plurality of mask holes in the non-contact surface, and is joined to the mask frame at the portion via a joint portion.

Description

蒸镀用金属掩模以及蒸镀用金属掩模的制造方法Metal mask for vapor deposition and method for manufacturing metal mask for vapor deposition

技术领域technical field

本发明涉及蒸镀用金属掩模以及蒸镀用金属掩模的制造方法。The present invention relates to a metal mask for vapor deposition and a method for manufacturing the metal mask for vapor deposition.

背景技术Background technique

在通过蒸镀物质对基板等蒸镀对象进行蒸镀时,有时使用金属掩模。该蒸镀用金属掩模具备接触面和非接触面。接触面是与蒸镀对象进行接触的面。非接触面是与接触面相反侧的面。从非接触面贯通到接触面的掩模孔具备非接触侧开口和接触侧开口。非接触侧开口是位于非接触面而供蒸镀物质进入的开口。接触侧开口位于接触面而与蒸镀对象对置。从非接触侧开口进入并通过接触侧开口的蒸镀物质向蒸镀对象进行堆积。由此,形成依据于接触侧开口的位置、形状的图案(例如,参照日本特开2015-055007号公报)。When vapor-depositing a vapor-deposition target such as a substrate with a vapor-deposition substance, a metal mask may be used. This vapor deposition metal mask has a contact surface and a non-contact surface. The contact surface is a surface that comes into contact with a vapor deposition target. The non-contact surface is the surface opposite to the contact surface. The mask hole penetrating from the non-contact surface to the contact surface has a non-contact side opening and a contact side opening. The opening on the non-contact side is an opening on the non-contact surface through which vapor deposition substances enter. The contact side opening is located on the contact surface and faces the vapor deposition target. The vapor deposition substance entering from the opening on the non-contact side and passing through the opening on the contact side deposits on the vapor deposition target. Thereby, a pattern depending on the position and shape of the opening on the contact side is formed (for example, refer to JP-A-2015-055007).

为了提高图案上的位置等的精度,蒸镀用金属掩模的掩模孔的通路截面积,从非接触侧开口朝向接触侧开口单调地减少。近年,为了提高图案的膜厚的均匀性等的精度,还希望使非接触侧开口与接触侧开口之间的距离、即蒸镀用金属掩模的厚度变薄。In order to improve the accuracy of the position on the pattern, etc., the via cross-sectional area of the mask hole of the metal mask for vapor deposition decreases monotonously from the non-contact side opening toward the contact side opening. In recent years, in order to improve the accuracy of pattern film thickness uniformity, etc., it is also desired to reduce the distance between the non-contact side opening and the contact side opening, that is, the thickness of the metal mask for vapor deposition.

另一方面,在厚度较薄的蒸镀用金属掩模中,不能够得到足够的蒸镀用金属掩模的机械耐受性,因此蒸镀用金属掩模的操作性显著低。On the other hand, in a thin metal mask for vapor deposition, sufficient mechanical resistance of the metal mask for vapor deposition cannot be obtained, so the handleability of the metal mask for vapor deposition is remarkably low.

发明内容Contents of the invention

本发明的目的在于,提供能够将通过蒸镀形成的图案的位置或膜厚等构造上的精度的提高、以及蒸镀用金属掩模的操作性的提高这两者兼顾的蒸镀用金属掩模以及蒸镀用金属掩模的制造方法。An object of the present invention is to provide a metal mask for vapor deposition capable of achieving both improvement in structural accuracy such as the position and film thickness of a pattern formed by vapor deposition, and improvement in the operability of the metal mask for vapor deposition. A method of manufacturing a mold and a metal mask for vapor deposition.

用于解决上述课题的蒸镀用金属掩模,具备掩模部,该掩模部具备用于与蒸镀对象接触的接触面以及与上述接触面相反侧的非接触面,形成为片形状,而且,该掩模部具有分别从位于上述接触面的第一开口贯通到位于上述非接触面的第二开口的多个掩模孔,上述第一开口的大小小于上述第二开口的大小。并且,该蒸镀用金属掩模还具备掩模框架,该掩模框架具有比上述掩模部高的刚性,并且形成为将上述多个掩模孔包围的框状。上述掩模部在上述非接触面中具有将上述多个掩模孔包围的部分,在该部分通过接合部与上述掩模框架接合。A metal mask for vapor deposition for solving the above-mentioned problems includes a mask portion having a contact surface for contacting a vapor deposition object and a non-contact surface opposite to the contact surface, and is formed in a sheet shape, Moreover, the mask portion has a plurality of mask holes respectively penetrating from the first opening on the contact surface to the second opening on the non-contact surface, and the size of the first opening is smaller than that of the second opening. In addition, the metal mask for vapor deposition further includes a mask frame which has higher rigidity than the mask portion and is formed in a frame shape surrounding the plurality of mask holes. The mask portion has a portion surrounding the plurality of mask holes on the non-contact surface, and the portion is joined to the mask frame by a joint portion.

用于解决上述课题的蒸镀用金属掩模的制造方法为,包括:形成掩模部的工序,该掩模部具备用于与蒸镀对象接触的接触面以及与上述接触面相反侧的非接触面,形成为片形状,而且,该掩模部具有分别从位于上述接触面的第一开口贯通到位于上述非接触面的第二开口的多个掩模孔,上述第一开口的大小小于上述第二开口的大小;和A method of manufacturing a metal mask for vapor deposition for solving the above-mentioned problems includes: a step of forming a mask portion having a contact surface for contacting a vapor deposition object and a non-contact surface opposite to the contact surface. The contact surface is formed in a sheet shape, and the mask portion has a plurality of mask holes respectively penetrating from the first opening on the contact surface to the second opening on the non-contact surface, and the size of the first opening is smaller than the size of said second opening; and

将上述掩模部与掩模框架接合的工序,该掩模框架具有比上述掩模部高的刚性,且形成为将上述多个掩模孔包围的框状,而且,上述掩模部在上述非接触面中具有将上述多个掩模孔包围的部分,该掩模部与掩模框架接合的工序中,上述掩模部在该部分通过接合部与上述掩模框架接合。A step of joining the mask portion to a mask frame, the mask frame having a higher rigidity than the mask portion and being formed in a frame shape surrounding the plurality of mask holes, and the mask portion is placed on the The non-contact surface has a portion surrounding the plurality of mask holes, and in the step of bonding the mask portion to the mask frame, the mask portion is bonded to the mask frame through a bonding portion at this portion.

根据上述各构成,从第二开口向掩模孔内进入的蒸镀物质,通过具有比第二开口小的大小的第一开口向蒸镀对象进行堆积。因此,能够提高由蒸镀物质构成的图案的构造上的精度。并且,第二开口所位于的非接触面与具有比掩模部高的刚性的掩模框架接合。因此,容易使接触面与蒸镀对象接触,并且能够提高蒸镀用金属掩模本身的刚性,进而能够提高蒸镀用金属掩模的操作性。According to each of the above configurations, the vapor deposition substance entering the mask hole from the second opening is deposited on the vapor deposition target through the first opening having a smaller size than the second opening. Therefore, it is possible to improve the structural accuracy of the pattern made of the vapor-deposited substance. And, the non-contact surface where the second opening is located is joined to the mask frame having higher rigidity than the mask portion. Therefore, it is easy to bring the contact surface into contact with the vapor deposition target, and the rigidity of the metal mask for vapor deposition itself can be increased, and the handleability of the metal mask for vapor deposition can also be improved.

在上述蒸镀用金属掩模中,也可以是,具备与共用的一个上述掩模框架接合的多个上述掩模部。In the said metal mask for vapor deposition, you may provide the some said mask part joined to the common one said mask frame.

在上述蒸镀用金属掩模的制造方法中,也可以是,将上述掩模框架与上述非接触面接合的工序为,将多个上述掩模部与一个上述掩模框架接合。In the method of manufacturing the metal mask for vapor deposition, the step of bonding the mask frame to the non-contact surface may be bonding a plurality of the mask portions to one mask frame.

根据上述各构成,能够将一个掩模框架所需要的掩模孔的数量,分割给多个掩模部。并且,与一个掩模部具备一个掩模框架所需要的全部掩模孔的构成相比,上述蒸镀用金属掩模在以下方面更优良。即,即使在一个掩模部的一部分产生变形的情况下,也能够将与变形的掩模部进行更换的新掩模部的大小抑制为多个掩模部中的一个。进而,还能够抑制蒸镀用金属掩模的修补所需要的各种材料的消耗量。According to each of the configurations described above, the number of mask holes required for one mask frame can be divided into a plurality of mask portions. Furthermore, the metal mask for vapor deposition described above is superior in the following points, compared to a configuration in which one mask portion includes all the mask holes required for one mask frame. That is, even when a part of one mask portion is deformed, the size of a new mask portion to be replaced with the deformed mask portion can be suppressed to one of a plurality of mask portions. Furthermore, consumption of various materials required for repairing the metal mask for vapor deposition can also be suppressed.

在上述蒸镀用金属掩模中,也可以是,上述掩模部为金属片,上述接触面以及上述非接触面中的至少一方包括平滑面,上述平滑面设为向该平滑面入射的光的镜面反射的反射率为45.2%以上,上述金属片的厚度为50μm以下。In the metal mask for vapor deposition described above, the mask part may be a metal sheet, at least one of the contact surface and the non-contact surface may include a smooth surface, and the smooth surface may be light incident on the smooth surface. The reflectivity of specular reflection is 45.2% or more, and the thickness of the metal sheet is 50 μm or less.

在上述蒸镀用金属掩模的制造方法中,也可以是,上述掩模部为金属片,上述接触面以及上述非接触面中的至少一方包括平滑面,上述平滑面设为向该平滑面入射的光的镜面反射的反射率为45.2%以上,上述金属片的厚度为50μm以下。In the above-mentioned method for manufacturing a metal mask for vapor deposition, the mask part may be a metal sheet, at least one of the contact surface and the non-contact surface may include a smooth surface, and the smooth surface may be provided facing toward the smooth surface. The reflectance of specular reflection of incident light is 45.2% or more, and the thickness of the metal sheet is 50 μm or less.

掩模部所具有的厚度越薄,与上述掩模框架接合的效果越显著。根据上述各构成,对于具有50μm以下的厚度的较薄的掩模部,能够得到上述效果。The thinner the thickness of the mask portion, the more pronounced the effect of being joined to the mask frame. According to each of the above configurations, the above effects can be obtained for a thin mask portion having a thickness of 50 μm or less.

在上述蒸镀用金属掩模中,也可以是,上述掩模部为金属片,上述接触面以及上述非接触面中的至少一方包括平滑面,上述平滑面设为向该平滑面入射的光的镜面反射的反射率为53.0%以上,上述金属片的厚度为40μm以下。In the metal mask for vapor deposition described above, the mask part may be a metal sheet, at least one of the contact surface and the non-contact surface may include a smooth surface, and the smooth surface may be light incident on the smooth surface. The reflectivity of specular reflection is 53.0% or more, and the thickness of the metal sheet is 40 μm or less.

在上述蒸镀用金属掩模的制造方法中,也可以是,上述掩模部为金属片,上述接触面以及上述非接触面中的至少一方包括平滑面,上述平滑面设为向该平滑面入射的光的镜面反射的反射率为53.0%以上,上述金属片的厚度为40μm以下。In the above-mentioned method for manufacturing a metal mask for vapor deposition, the mask part may be a metal sheet, at least one of the contact surface and the non-contact surface may include a smooth surface, and the smooth surface may be provided facing toward the smooth surface. The reflectance of specular reflection of incident light is 53.0% or more, and the thickness of the metal sheet is 40 μm or less.

根据上述各构成,对于具有40μm以下的厚度的较薄的掩模部,能够得到上述效果。According to each of the above configurations, the above effects can be obtained for a thin mask portion having a thickness of 40 μm or less.

在上述蒸镀用金属掩模中,也可以是,上述掩模框架具备上述接合部所位于的平面,上述平面具有朝向上述掩模部的外侧延展的大小。In the above metal mask for vapor deposition, the mask frame may include a plane on which the bonding portion is located, and the plane may have a size extending toward the outside of the mask portion.

根据上述蒸镀用金属掩模,与非接触面接合的平面朝向掩模部的外侧延展。即,掩模框架具备具有片形状的掩模部的非接触面虚拟地扩展的面构造。因此,在掩模框架的平面扩展的范围中,与掩模部的厚度相当的空间容易地形成在掩模部的周围。作为结果,能够抑制与接触面接触的蒸镀对象与掩模框架物理地干涉。According to the metal mask for vapor deposition described above, the plane joined to the non-contact surface extends toward the outside of the mask portion. That is, the mask frame has a surface structure in which the non-contact surface of the sheet-shaped mask portion virtually expands. Therefore, a space corresponding to the thickness of the mask portion is easily formed around the mask portion in the range in which the plane of the mask frame spreads. As a result, it is possible to suppress physical interference between the vapor deposition target in contact with the contact surface and the mask frame.

附图说明Description of drawings

图1是表示一个实施方式的掩模装置的平面构造的平面图。FIG. 1 is a plan view showing a planar structure of a mask apparatus according to one embodiment.

图2是局部地表示掩模部所具有的截面构造的一个例子的截面图。FIG. 2 is a cross-sectional view partially showing an example of a cross-sectional structure of a mask portion.

图3是局部地表示掩模部所具有的截面构造的其他例子的截面图。3 is a cross-sectional view partially showing another example of a cross-sectional structure of a mask portion.

图4是局部地表示掩模部的边缘与掩模框架之间的接合构造的一个例子的截面图。4 is a cross-sectional view partially showing an example of a joint structure between an edge of a mask portion and a mask frame.

图5是局部地表示掩模部的边缘与掩模框架之间的接合构造的其他例子的截面图。5 is a cross-sectional view partially showing another example of the joint structure between the edge of the mask portion and the mask frame.

图6是表示蒸镀用金属掩模所具有的掩模孔的数量与各掩模部所具备的掩模孔的数量之间的关系的一个例子的图,(a)是表示蒸镀用金属掩模的平面构造的平面图,(b)是表示蒸镀用金属掩模的截面构造的截面图。6 is a diagram showing an example of the relationship between the number of mask holes included in a metal mask for vapor deposition and the number of mask holes included in each mask portion, and (a) shows a metal mask for vapor deposition. The plan view of the planar structure of a mask, (b) is a cross-sectional view which shows the cross-sectional structure of the metal mask for vapor deposition.

图7是表示蒸镀用金属掩模所具有的掩模孔的数量与掩模部所具备的掩模孔的数量之间的关系的其他例子的图,(a)是表示蒸镀用金属掩模的平面构造的平面图,(b)是表示蒸镀用金属掩模的截面构造的截面图。7 is a diagram showing another example of the relationship between the number of mask holes included in the metal mask for vapor deposition and the number of mask holes included in the mask portion, and (a) shows the metal mask for vapor deposition. (b) is a plan view showing a planar structure of a mold, and (b) is a cross-sectional view showing a cross-sectional structure of a metal mask for vapor deposition.

图8是对于蒸镀用金属掩模基材的一个例子表示截面构造的截面图。8 is a cross-sectional view showing a cross-sectional structure of an example of a metal mask substrate for vapor deposition.

图9是对于蒸镀用金属掩模基材的其他例子表示截面构造的截面图。9 is a cross-sectional view showing a cross-sectional structure of another example of a metal mask substrate for vapor deposition.

图10是表示各制造方法、蒸镀用金属掩模基材的片对象面的表面粗糙度、以及蒸镀用金属掩模基材的片对象面的反射率之间的关系的图。FIG. 10 is a graph showing the relationship between the production methods, the surface roughness of the sheet-facing surface of the metal mask base for vapor deposition, and the reflectance of the sheet-facing surface of the metal mask base for vapor deposition.

图11是表示各蒸镀用金属掩模基材的片对象面的反射率的图表。FIG. 11 is a graph showing the reflectance of the sheet-facing surface of each metal mask base material for vapor deposition.

图12是对一个实施方式的蒸镀用金属掩模的制造方法的一个例子进行说明的图,(a)至(h)分别是表示工序的流程的工序图。12 is a diagram illustrating an example of a method of manufacturing a metal mask for vapor deposition according to an embodiment, and (a) to (h) are process diagrams each showing a flow of steps.

图13是对一个实施方式的蒸镀用金属掩模的制造方法的其他例子进行说明的图,(a)至(e)分别是表示工序的流程的工序图。13 is a diagram illustrating another example of the method of manufacturing the metal mask for vapor deposition according to one embodiment, and (a) to (e) are process diagrams showing the flow of the steps, respectively.

图14是对一个实施方式的蒸镀用金属掩模的制造方法的其他例子进行说明的图,(a)至(f)分别是表示工序的流程的工序图。14 is a diagram illustrating another example of the method of manufacturing the metal mask for vapor deposition according to one embodiment, and (a) to (f) are process diagrams showing the flow of the steps, respectively.

符号的说明Explanation of symbols

F…应力,S…蒸镀对象,V…空间,EPS…电极表面,H1…背面开口,H2…表面开口,PR…抗蚀剂层,RM…抗蚀掩模,SH…阶梯高度,T1、T32…厚度,TM…中间转印基材,10…掩模装置,20…主框架,21…主框架孔,30…蒸镀用金属掩模,31…掩模框架,31E…框架内侧边缘部,32、32A、32B、32C…掩模部,32BN…接合部,32E…外周边缘部,32H…掩模孔,32K…基材,32LH…掩模大孔,32SH…掩模小孔,33、33A、33B、33C…掩模框架孔,311…框架背面,312…框架表面,321…掩模背面,322…掩模表面,323…掩模片。F…stress, S…evaporation object, V…space, EPS…electrode surface, H1…back opening, H2…surface opening, PR…resist layer, RM…resist mask, SH…step height, T1, T32…thickness, TM…intermediate transfer substrate, 10…mask unit, 20…main frame, 21…main frame hole, 30…metal mask for vapor deposition, 31…mask frame, 31E…inside edge of frame , 32, 32A, 32B, 32C... mask part, 32BN... joint part, 32E... peripheral edge part, 32H... mask hole, 32K... base material, 32LH... mask large hole, 32SH... mask small hole, 33 , 33A, 33B, 33C... mask frame hole, 311... frame back, 312... frame surface, 321... mask back, 322... mask surface, 323... mask sheet.

具体实施方式detailed description

参照图1至图14,对蒸镀用金属掩模以及蒸镀用金属掩模的制造方法的一个实施方式进行说明。One embodiment of the metal mask for vapor deposition and the manufacturing method of the metal mask for vapor deposition will be described with reference to FIGS. 1 to 14 .

[掩模装置][Mask device]

如图1所示那样,掩模装置10具备主框架20和多个蒸镀用金属掩模30。主框架20具有对多个蒸镀用金属掩模30进行支撑的矩形框状。主框架20安装于用于进行蒸镀的蒸镀装置。主框架20具有多个主框架孔21。各主框架孔21遍及各蒸镀用金属掩模30所处范围的几乎整体,贯通主框架20。As shown in FIG. 1 , the mask device 10 includes a main frame 20 and a plurality of metal masks 30 for vapor deposition. The main frame 20 has a rectangular frame shape supporting a plurality of vapor deposition metal masks 30 . The main frame 20 is attached to a vapor deposition device for vapor deposition. The main frame 20 has a plurality of main frame holes 21 . Each main frame hole 21 covers almost the entire range where each vapor deposition metal mask 30 is located, and penetrates through the main frame 20 .

蒸镀用金属掩模30具备掩模框架31和多个掩模部32。掩模框架31具有对掩模部32进行支撑的短条板状。掩模框架31安装于主框架20。掩模框架31具有多个掩模框架孔33。各掩模框架孔33遍及对应的掩模部32所处范围的几乎整体,贯通掩模框架31。掩模框架31具有比掩模部32高的刚性,并且具有将各掩模框架孔33包围的框状。各掩模部32通过熔敷、粘合而被固定于划分出对应的掩模框架孔33的、掩模框架31的框架内侧边缘部。The metal mask 30 for vapor deposition includes a mask frame 31 and a plurality of mask portions 32 . The mask frame 31 has a short strip shape that supports the mask portion 32 . The mask frame 31 is attached to the main frame 20 . The mask frame 31 has a plurality of mask frame holes 33 . Each mask frame hole 33 covers substantially the entire range where the corresponding mask portion 32 is located, and penetrates the mask frame 31 . The mask frame 31 has higher rigidity than the mask portion 32 and has a frame shape surrounding each mask frame hole 33 . Each mask portion 32 is fixed to the frame inner edge portion of the mask frame 31 defining the corresponding mask frame hole 33 by welding or bonding.

接下来,参照图2对掩模部32所具有的截面构造的一个例子进行说明,参照图3对掩模部32所具有的截面构造的其他例子进行说明。Next, an example of the cross-sectional structure of the mask portion 32 will be described with reference to FIG. 2 , and another example of the cross-sectional structure of the mask portion 32 will be described with reference to FIG. 3 .

如图2所示的例子那样,掩模部32的一个例子为由掩模片323构成。掩模片323为单一的金属片、多层的金属片、以及金属片与树脂片的层叠体中的任一个。构成掩模片323的金属片的材料为镍或铁镍合金。构成掩模片323的金属片的材料,例如为含有30质量%以上的镍的铁镍合金,为这其中的以36质量%镍和64质量%铁的合金为主成分的因瓦铁镍合金(invar)。在将36质量%镍和64质量%铁的合金为主成分的情况下,残余成分包括铬、锰、碳、钴等添加物。在构成掩模片323的金属片为因瓦铁镍合金片的情况下,金属片的热膨胀系数例如为1.2×10-6/℃程度。如果是具有这样的热膨胀系数的掩模片323,则掩模部32的热膨胀的程度与玻璃基板的热膨胀的程度相匹配。因此,将玻璃基板用作为蒸镀对象的一个例子较好。An example of the mask portion 32 is constituted by a mask sheet 323 as in the example shown in FIG. 2 . The mask sheet 323 is any one of a single metal sheet, a multilayer metal sheet, and a laminated body of a metal sheet and a resin sheet. The metal sheet constituting the mask sheet 323 is made of nickel or iron-nickel alloy. The material of the metal sheet constituting the mask sheet 323 is, for example, an iron-nickel alloy containing more than 30% by mass of nickel, and among them, an alloy of 36% by mass nickel and 64% by mass of iron is an invar-iron-nickel alloy. (invar). In the case of an alloy of 36% by mass nickel and 64% by mass iron as the main component, the remaining components include additives such as chromium, manganese, carbon, and cobalt. When the metal sheet constituting the mask sheet 323 is an Invar sheet, the thermal expansion coefficient of the metal sheet is, for example, about 1.2×10 −6 /°C. With the mask sheet 323 having such a coefficient of thermal expansion, the degree of thermal expansion of the mask portion 32 matches the degree of thermal expansion of the glass substrate. Therefore, it is preferable to use a glass substrate as an example of a vapor deposition target.

掩模片323具有接触面的一个例子即掩模背面321。掩模片323具备非接触面的一个例子即掩模表面322,该掩模表面322为与掩模背面321相反侧的面。掩模表面322是在蒸镀装置中用于与蒸镀源对置的面。掩模背面321是在蒸镀装置中用于与玻璃基板等蒸镀对象接触的面。The mask sheet 323 has a mask back surface 321 as an example of a contact surface. The mask sheet 323 has a mask surface 322 that is an example of a non-contact surface, and the mask surface 322 is a surface opposite to the mask back surface 321 . The mask surface 322 is a surface for facing the vapor deposition source in the vapor deposition apparatus. The mask back surface 321 is a surface to be in contact with a vapor deposition target such as a glass substrate in the vapor deposition apparatus.

掩模片323所具有的厚度、即掩模表面322与掩模背面321之间的距离为1μm以上100μm以下,优选为1μm以上50μm以下,更优选为2μm以上40μm以下。如果掩模片323所具有的厚度为40μm以下,则形成于掩模片323的掩模孔32H的深度为40μm以下。这种较薄的掩模片323在以下方面较优良。即,在从朝向掩模片323飞行的蒸镀物质的粒子(蒸镀粒子)观察蒸镀对象时,与较厚的掩模片323相比,能够使由于蒸镀用金属掩模30而不能够附着的部分(成为遮挡的部分)减少。换言之,能够抑制阴影效应。The thickness of the mask sheet 323 , that is, the distance between the mask surface 322 and the mask back surface 321 is 1 μm to 100 μm, preferably 1 μm to 50 μm, more preferably 2 μm to 40 μm. If the thickness of the mask sheet 323 is 40 μm or less, the depth of the mask hole 32H formed in the mask sheet 323 is 40 μm or less. Such a thinner mask sheet 323 is superior in the following points. That is, when the vapor deposition target is observed from the particles of the vapor deposition substance flying toward the mask sheet 323 (vapor deposition particles), compared with the thicker mask sheet 323, the metal mask 30 for vapor deposition can not The part that can be attached (the part that will be blocked) is reduced. In other words, shadow effects can be suppressed.

各掩模部32具有贯通掩模片323的多个掩模孔32H。划分出掩模孔32H的孔侧面,在截面视图中相对于掩模片323的厚度方向具有倾斜。划分出掩模孔32H的孔侧面的形状,在截面视图中可以为直线状,可以为朝向掩模孔32H的外侧伸出的半圆弧状,也可以为具有多个弯折点的复杂的曲线状。Each mask portion 32 has a plurality of mask holes 32H penetrating the mask sheet 323 . The hole side faces that define the mask hole 32H have an inclination with respect to the thickness direction of the mask sheet 323 in a cross-sectional view. The shape of the side surface of the hole defining the mask hole 32H may be a straight line in a cross-sectional view, a semicircular arc protruding toward the outside of the mask hole 32H, or a complex curved shape with multiple bending points. .

掩模表面322包括各掩模孔32H的第二开口即表面开口H2。掩模背面321包括各掩模孔32H的第一开口即背面开口H1。在俯视时,表面开口H2的大小大于背面开口H1的大小。各掩模孔32H是供从蒸镀源升华的蒸镀粒子通过的通路。从蒸镀源升华的蒸镀粒子从表面开口H2朝向背面开口H1进入。只要是表面开口H2大于背面开口H1的掩模孔32H,则能够对于从表面开口H2进入的蒸镀粒子抑制阴影效应。此外,与掩模背面321平行的截面中的掩模孔32H的面积也可以为,随着该截面从背面开口H1朝向表面开口H2移动,从背面开口H1到表面开口H2,该面积单调地增大。换言之,掩模孔32H的截面积也可以为,从表面开口H2朝向背面开口H1,截面积单调地减少。如果是这样的掩模孔32H,则能够进一步抑制上述阴影效应。The mask surface 322 includes a second opening of each mask hole 32H, ie, a surface opening H2. The mask back surface 321 includes a back surface opening H1 which is the first opening of each mask hole 32H. When viewed from above, the size of the surface opening H2 is larger than the size of the rear opening H1 . Each mask hole 32H is a passage through which vapor deposition particles sublimated from a vapor deposition source pass. The vapor deposition particles sublimated from the vapor deposition source enter from the front opening H2 toward the back opening H1 . As long as the surface opening H2 is larger than the mask hole 32H of the rear opening H1, the shadow effect on the vapor deposition particles entering through the surface opening H2 can be suppressed. In addition, the area of the mask hole 32H in a cross section parallel to the mask back surface 321 may increase monotonically from the back opening H1 to the front opening H2 as the cross section moves from the back opening H1 to the front opening H2. Big. In other words, the cross-sectional area of the mask hole 32H may decrease monotonously from the front opening H2 toward the rear opening H1 . Such a mask hole 32H can further suppress the shadow effect described above.

在图3所示的其他例子中,各掩模部32具有分别贯通掩模片323的多个掩模孔32H。在图3所示的例子中,在俯视时,表面开口H2的大小大于背面开口H1的大小。各掩模孔32H由具有表面开口H2的掩模大孔32LH和具有背面开口H1的掩模小孔32SH构成。掩模大孔32LH是从表面开口H2朝向掩模背面321而其截面积单调地减少的孔。掩模小孔32SH是从背面开口H1朝向掩模表面322而其截面积单调地减少的孔。划分出各掩模孔32H的孔侧面,在截面视图中,具有掩模大孔32LH与掩模小孔32SH连接的部分。掩模大孔32LH与掩模小孔32SH连接的部分,位于掩模片323的厚度方向的中间。掩模大孔32LH和与掩模小孔32SH连接的部分具有朝向掩模孔32H的内侧突出的形状。在掩模孔32H的孔侧面朝向内侧最突出的部位与掩模背面321之间的距离为阶梯高度SH。之前在图2中说明了的截面构造,是使阶梯高度SH成为零的例子。从抑制上述阴影效应的观点,优选阶梯高度SH为零。此外,为了得到阶梯高度SH为零的掩模部32,例如优选使掩模片323的厚度为40μm以下,以便通过从掩模表面322向掩模背面321的湿式蚀刻来形成掩模孔32H,而不需要从掩模背面321进行湿式蚀刻。In another example shown in FIG. 3 , each mask portion 32 has a plurality of mask holes 32H penetrating through the mask sheet 323 . In the example shown in FIG. 3 , the size of the front opening H2 is larger than the size of the rear opening H1 in plan view. Each mask hole 32H is composed of a mask large hole 32LH having a front opening H2 and a mask small hole 32SH having a back opening H1. The mask large hole 32LH is a hole whose cross-sectional area decreases monotonously from the front surface opening H2 toward the mask back surface 321 . The mask small hole 32SH is a hole whose cross-sectional area decreases monotonously from the rear opening H1 toward the mask surface 322 . The hole side surface defining each mask hole 32H has a portion connecting the mask large hole 32LH and the mask small hole 32SH in a cross-sectional view. The portion where the large mask hole 32LH connects to the small mask hole 32SH is located in the middle of the mask sheet 323 in the thickness direction. The mask large hole 32LH and the portion connected to the mask small hole 32SH have a shape protruding toward the inside of the mask hole 32H. The distance between the hole side surface of the mask hole 32H protruding most inward and the mask back surface 321 is the step height SH. The cross-sectional structure described above in FIG. 2 is an example in which the step height SH is made zero. From the viewpoint of suppressing the above-mentioned shading effect, it is preferable that the step height SH is zero. In addition, in order to obtain the mask portion 32 with a step height SH of zero, for example, the thickness of the mask sheet 323 is preferably 40 μm or less so that the mask hole 32H is formed by wet etching from the mask surface 322 to the mask back surface 321, There is no need for wet etching from the mask backside 321 .

[掩模部的接合][Joining of mask part]

接下来,参照图4对掩模部32与掩模框架31之间的接合构造所具有的截面构造的一个例子进行说明。参照图5对掩模部32与掩模框架31之间的接合构造所具有的截面构造的其他例子进行说明。Next, an example of the cross-sectional structure of the joint structure between the mask portion 32 and the mask frame 31 will be described with reference to FIG. 4 . Another example of the cross-sectional structure of the joint structure between the mask portion 32 and the mask frame 31 will be described with reference to FIG. 5 .

如图4所示的例子那样,在掩模片323的外周边缘部32E连续有未形成掩模孔32H的区域。在掩模片323所具有的掩模表面322上,掩模片323的外周边缘部32E所包含的部分与掩模框架31接合。掩模框架31具备划分出各掩模框架孔33的框架内侧边缘部31E。框架内侧边缘部31E具备与掩模片323对置的框架背面311。框架内侧边缘部31E具有与框架背面311相反侧的面即框架表面312。框架内侧边缘部31E的厚度T31、即框架背面311与框架表面312之间的距离,比掩模片323所具有的厚度T32厚,由此,掩模框架31具有比掩模片323高的刚性。特别是,针对框架内侧边缘部31E由于自重而垂下的情况、框架内侧边缘部31E朝向掩模部32的中央位移的情况,掩模框架31具有比掩模片323高的刚性。与掩模表面322接合的接合部32BN位于框架内侧边缘部31E的框架背面311。As in the example shown in FIG. 4 , a region in which no mask hole 32H is formed continues on the outer peripheral edge portion 32E of the mask sheet 323 . On the mask surface 322 of the mask sheet 323 , a portion included in the outer peripheral edge portion 32E of the mask sheet 323 is joined to the mask frame 31 . The mask frame 31 includes a frame inner edge portion 31E that defines each mask frame hole 33 . The frame inner edge portion 31E has a frame back surface 311 facing the mask sheet 323 . The frame inner edge portion 31E has a frame surface 312 that is a surface opposite to the frame back surface 311 . The thickness T31 of the frame inner edge portion 31E, that is, the distance between the frame back surface 311 and the frame surface 312, is thicker than the thickness T32 of the mask sheet 323, whereby the mask frame 31 has higher rigidity than the mask sheet 323. . In particular, the mask frame 31 has higher rigidity than the mask sheet 323 when the frame inner edge 31E hangs down due to its own weight or when the frame inner edge 31E is displaced toward the center of the mask portion 32 . The bonding portion 32BN that is bonded to the mask surface 322 is located on the frame back surface 311 of the frame inside edge portion 31E.

接合部32BN遍及框架内侧边缘部31E的几乎整周,连续地或者间歇地地配设。接合部32BN是通过框架背面311与掩模表面322的熔敷而形成的熔敷痕。熔敷痕是构成掩模框架31的材料与构成掩模部32的材料的混合物。或者,接合部32BN是将框架背面311与掩模表面322进行接合的接合层。接合层包含与构成掩模框架31的材料、构成掩模部32的材料不同的材料。在掩模框架31中,框架内侧边缘部31E的框架背面311与掩模片323的掩模表面322接合。掩模表面322与掩模框架31被接合,因此与不具备掩模框架31的蒸镀用金属掩模相比,能够提高蒸镀用金属掩模30本身的刚性。The joining portion 32BN is arranged continuously or intermittently over substantially the entire circumference of the frame inner edge portion 31E. The bonding portion 32BN is a welding mark formed by welding the frame back surface 311 and the mask surface 322 . The weld line is a mixture of the material constituting the mask frame 31 and the material constituting the mask portion 32 . Alternatively, the bonding portion 32BN is a bonding layer that bonds the frame back surface 311 and the mask surface 322 . The bonding layer contains a material different from the material constituting the mask frame 31 and the material constituting the mask portion 32 . In the mask frame 31 , the frame back surface 311 of the frame inside edge portion 31E is bonded to the mask surface 322 of the mask sheet 323 . Since the mask surface 322 is bonded to the mask frame 31 , the rigidity of the metal mask for vapor deposition 30 itself can be increased compared to a metal mask for vapor deposition that does not include the mask frame 31 .

掩模框架31对掩模片323施加各掩模片323被朝向该掩模片323的外侧拉动那样的应力F。此外,对于掩模框架31,也通过主框架20而施加掩模框架31被朝向掩模框架31的外侧拉动那样的应力。该应力的大小与掩模片323的应力F为相同程度。因此,在从主框架20拆卸的蒸镀用金属掩模30中,基于主框架20与掩模框架31的接合的应力被解除,对掩模片323施加的应力F也得到缓和。框架背面311上的接合部32BN的位置,优选为使应力F在掩模片323中各向同性地作用的位置。框架背面311上的接合部32BN的位置,基于掩模片323所具有的形状以及掩模框架孔33所具有的形状来适当地选择。The mask frame 31 applies a stress F such that each mask sheet 323 is pulled toward the outside of the mask sheet 323 to the mask sheet 323 . In addition, a stress such that the mask frame 31 is pulled toward the outside of the mask frame 31 is also applied by the main frame 20 to the mask frame 31 . The magnitude of this stress is about the same as the stress F of the mask sheet 323 . Therefore, in the vapor deposition metal mask 30 detached from the main frame 20 , the stress due to the bonding between the main frame 20 and the mask frame 31 is released, and the stress F applied to the mask sheet 323 is also relieved. The position of the bonding portion 32BN on the frame back surface 311 is preferably a position where the stress F acts isotropically on the mask sheet 323 . The position of the bonding portion 32BN on the frame back surface 311 is appropriately selected based on the shape of the mask sheet 323 and the shape of the mask frame hole 33 .

构成掩模部32的掩模片323的厚度例如为1μm以上50μm以下。掩模表面322以及掩模背面321的至少一方,在包围掩模孔32H的区域中包括平滑面。平滑面例如设为,向平滑面入射的光的镜面反射的反射率为45.2%以上。或者,平滑面例如设为,三维表面粗糙度Sa为0.11μm以下,且三维表面粗糙度Sz为3.17μm以下。The thickness of the mask sheet 323 constituting the mask portion 32 is, for example, 1 μm or more and 50 μm or less. At least one of the mask surface 322 and the mask back surface 321 includes a smooth surface in a region surrounding the mask hole 32H. The smooth surface is set so that, for example, the reflectance of specular reflection of light incident on the smooth surface is 45.2% or more. Alternatively, for the smooth surface, for example, the three-dimensional surface roughness Sa is 0.11 μm or less, and the three-dimensional surface roughness Sz is 3.17 μm or less.

构成掩模片323的金属片通过如下任一种方法来制造:(A)基于电解的金属材料的析出;(B)金属材料的轧制以及研磨;(C)基于电解的金属材料的析出以及研磨;(D)仅金属材料的轧制。掩模部32所具有的厚度越薄,则掩模框架31与掩模部32的接合所带来的效果越显著。根据上述例示的掩模部32,对于具有50μm以下厚度的较薄的掩模部32,能够得到上述效果。The metal sheet constituting the mask sheet 323 is manufactured by any of the following methods: (A) deposition of a metal material based on electrolysis; (B) rolling and grinding of a metal material; (C) deposition of a metal material based on electrolysis and Grinding; (D) Rolling of metallic materials only. The thinner the thickness of the mask part 32 is, the more prominent the effect of the bonding between the mask frame 31 and the mask part 32 is. According to the mask portion 32 exemplified above, the above-described effect can be obtained for the thin mask portion 32 having a thickness of 50 μm or less.

此外,在金属片中,具有金属片的厚度越薄则金属片的表面的反射率越高的趋势。此外,在金属片中,具有金属片的厚度越薄则金属片的表面的三维表面粗糙度Sa、三维表面粗糙度Sz越小的趋势。此外,在从掩模片323的表面开始进行用于形成掩模孔32H的湿式蚀刻的情况下,通过掩模片323的表面包含上述平滑面,还能够提高与形成于表面的抗蚀掩模的紧贴性。In addition, in metal flakes, the thinner the thickness of the metal flakes, the higher the reflectance of the surface of the metal flakes tends to be. In addition, in the metal sheet, the thinner the thickness of the metal sheet, the smaller the three-dimensional surface roughness Sa and the three-dimensional surface roughness Sz of the surface of the metal sheet tend to be. In addition, when the wet etching for forming the mask hole 32H is performed from the surface of the mask sheet 323, since the surface of the mask sheet 323 includes the above-mentioned smooth surface, it is also possible to improve the resistance to the resist mask formed on the surface. of closeness.

构成掩模部32的掩模片323的厚度例如为2μm以上40μm以下。在该构成中也是,掩模表面322以及掩模背面321的至少一方,在将掩模孔32H包围的区域包含平滑面。平滑面例如设为,向平滑面入射的光的镜面反射的反射率为53.0%以上。或者,平滑面例如设为,三维表面粗糙度Sa为0.019μm以下,且三维表面粗糙度Sz为0.308μm以下。根据此处例示的掩模部32,对于具有40μm以下厚度的极薄的掩模部32,能够得到特别优良的效果。此外,在从掩模片323的表面开始进行用于形成掩模孔32H的湿式蚀刻的情况下,通过掩模片323的表面包含上述平滑面,还能够减小形成于表面的抗蚀掩模的最小分辨率的尺寸。The thickness of the mask sheet 323 constituting the mask portion 32 is, for example, 2 μm or more and 40 μm or less. Also in this configuration, at least one of the mask surface 322 and the mask back surface 321 includes a smooth surface in a region surrounding the mask hole 32H. The smooth surface is set so that, for example, the reflectance of specular reflection of light incident on the smooth surface is 53.0% or more. Alternatively, for the smooth surface, for example, the three-dimensional surface roughness Sa is 0.019 μm or less, and the three-dimensional surface roughness Sz is 0.308 μm or less. According to the mask portion 32 exemplified here, a particularly excellent effect can be obtained for an extremely thin mask portion 32 having a thickness of 40 μm or less. In addition, when performing wet etching for forming the mask hole 32H from the surface of the mask sheet 323, since the surface of the mask sheet 323 includes the above-mentioned smooth surface, the size of the resist mask formed on the surface can also be reduced. The minimum resolution size of .

此外,通过测定从卤素灯射出的光入射到对象面时的镜面反射的反射光,根据下述式(1)来计算反射率R。从卤素灯射出的光相对于对象面的法线方向以45°±0.2°的入射角度向对象面的14mm2的区域入射。对反射光进行受光的元件的面积为11.4mm2In addition, the reflectance R was calculated from the following formula (1) by measuring the reflected light reflected by the specular surface when the light emitted from the halogen lamp was incident on the target surface. The light emitted from the halogen lamp is incident on the area of 14mm2 of the target surface at an incident angle of 45°±0.2° relative to the normal direction of the target surface. The area of the element that receives the reflected light is 11.4 mm 2 .

反射率R=[镜面反射的反射光的光量/入射光的光量]×100…(1)Reflectance R=[light amount of reflected light reflected by mirror surface/light amount of incident light]×100...(1)

此外,三维表面粗糙度Sa以及Sz是通过依据ISO 25178的方法来测定的值。三维表面粗糙度Sa是具有规定面积的定义区域中的算术平均高度。三维表面粗糙度Sz是具有规定面积的定义区域中的最大高度。In addition, three-dimensional surface roughness Sa and Sz are the values measured by the method based on ISO25178. The three-dimensional surface roughness Sa is the arithmetic mean height in a defined area having a prescribed area. The three-dimensional surface roughness Sz is the maximum height in a defined area with a prescribed area.

框架背面311是接合部32BN所处的平面。框架背面311从掩模表面322的外周边缘部32E朝向掩模片323的外侧延展。换言之,框架内侧边缘部31E具有掩模表面322向掩模表面322的外侧虚拟地扩展的面构造。框架内侧边缘部31E从掩模表面322的外周边缘部32E朝向掩模片323的外侧延展。在框架背面311延展的范围中,与掩模片323的厚度相当的空间V容易地形成在掩模片323的周围。作为结果,在掩模片323的周围,能够抑制蒸镀对象S与掩模框架31物理地干涉。The frame back surface 311 is a plane on which the bonding portion 32BN is located. The frame back surface 311 extends from the outer peripheral edge portion 32E of the mask surface 322 toward the outside of the mask sheet 323 . In other words, the frame inside edge portion 31E has a plane configuration in which the mask surface 322 virtually expands toward the outside of the mask surface 322 . The frame inside edge portion 31E extends from the outer peripheral edge portion 32E of the mask surface 322 toward the outside of the mask sheet 323 . A space V corresponding to the thickness of the mask sheet 323 is easily formed around the mask sheet 323 in the range where the frame back surface 311 extends. As a result, physical interference between the vapor deposition target S and the mask frame 31 can be suppressed around the mask sheet 323 .

在图5所示的例子中,在掩模片323的外周边缘部32E也连续有未形成掩模孔32H的区域。掩模表面322的外周边缘部32E通过基于接合部32BN的接合,而与掩模框架31所具备的框架背面311接合。掩模框架31对掩模片323施加各掩模片323被朝向该掩模片323的外侧拉动那样的应力F。掩模框架31在框架背面311延展的范围中,形成与掩模片323的厚度相当的空间V。In the example shown in FIG. 5 , there is also a region in which no mask hole 32H is formed continues on the outer peripheral edge portion 32E of the mask sheet 323 . The outer peripheral edge portion 32E of the mask surface 322 is bonded to the frame back surface 311 included in the mask frame 31 by bonding by the bonding portion 32BN. The mask frame 31 applies a stress F such that each mask sheet 323 is pulled toward the outside of the mask sheet 323 to the mask sheet 323 . The mask frame 31 forms a space V corresponding to the thickness of the mask sheet 323 in the range where the frame back surface 311 extends.

[掩模部的数量][Number of Mask Sections]

接下来,参照图6对蒸镀用金属掩模30所具备的掩模孔32H的数量、与各掩模部32所具备的掩模孔32H的数量之间的关系的一个例子进行说明。此外,参照图7对蒸镀用金属掩模30所具备的掩模孔32H的数量、与掩模部32所具备的掩模孔32H的数量之间的关系的其他例子进行说明。Next, an example of the relationship between the number of mask holes 32H included in the vapor deposition metal mask 30 and the number of mask holes 32H included in each mask portion 32 will be described with reference to FIG. 6 . In addition, another example of the relationship between the number of mask holes 32H included in the vapor deposition metal mask 30 and the number of mask holes 32H included in the mask portion 32 will be described with reference to FIG. 7 .

如图6(a)的例子所示那样,掩模框架31例如具有3个掩模框架孔33,作为多个掩模框架孔33。如图6(b)的例子所示那样,蒸镀用金属掩模30在各掩模框架孔33中各具备一个掩模部32。即,划分出掩模框架孔33A的框架内侧边缘部31E与一个掩模部32A接合。划分出掩模框架孔33B的另一个框架内侧边缘部31E与另一个掩模部32B接合。划分出掩模框架孔33C的剩余的一个框架内侧边缘部31E与剩余的一个掩模部32C接合。As shown in the example of FIG. 6( a ), the mask frame 31 has, for example, three mask frame holes 33 as a plurality of mask frame holes 33 . As shown in the example of FIG. 6( b ), the metal mask 30 for vapor deposition includes one mask portion 32 in each mask frame hole 33 . That is, the frame inside edge portion 31E defining the mask frame hole 33A is joined to one mask portion 32A. The other frame inside edge portion 31E defining the mask frame hole 33B is joined to the other mask portion 32B. The remaining one frame inside edge portion 31E defining the mask frame hole 33C is joined to the remaining one mask portion 32C.

蒸镀用金属掩模30能够对多个蒸镀对象反复使用。因此,蒸镀用金属掩模30所具备的多个掩模孔32H分别被要求掩模孔32H的位置、掩模孔32H的构造等的较高精度。如图6所示的构成那样,与将一个掩模框架31所需要的掩模孔32H的数量通过一个掩模部32来承担的构成相比,将一个掩模框架31所需要的掩模孔32H的数量通过3个掩模部32来承担的构成在以下方面更优良。例如,在一个掩模部32的一部分产生了变形的情况下,能够减小与所变形的掩模部32更换的新的掩模部32的大小。并且,还能够抑制蒸镀用金属掩模30的制造、修补所需要的各种材料的消耗量。此外,与掩模孔32H的构造相关的检查,优选在掩模框架31与掩模部32已接合的状态下进行。从该观点出发,上述接合部32BN优选为能够将变形的掩模部32更换为新的掩模部32的构成。并且,构成掩模部32的掩模片323的厚度越薄,掩模孔32H的尺寸越小,则掩模部32的成品率越容易降低。因此,各掩模框架孔33各具备一个掩模部32的构成,对于要求高精细的蒸镀用金属掩模30也较适合。Metal mask 30 for vapor deposition can be used repeatedly for a plurality of vapor deposition objects. Therefore, the plurality of mask holes 32H included in the vapor deposition metal mask 30 are required to have high precision in the position of the mask hole 32H, the structure of the mask hole 32H, and the like. As in the configuration shown in FIG. 6 , compared with the configuration in which the number of mask holes 32H required for one mask frame 31 is borne by one mask portion 32 , the number of mask holes 32H required for one mask frame 31 The configuration in which the number of 32H is covered by three mask portions 32 is more excellent in the following points. For example, when a part of one mask portion 32 is deformed, the size of a new mask portion 32 to be replaced with the deformed mask portion 32 can be reduced. In addition, it is also possible to suppress consumption of various materials required for manufacturing and repairing the metal mask 30 for vapor deposition. In addition, the inspection related to the structure of the mask hole 32H is preferably performed in a state where the mask frame 31 and the mask portion 32 are bonded. From this viewpoint, it is preferable that the above-mentioned joint portion 32BN has a configuration in which the deformed mask portion 32 can be replaced with a new mask portion 32 . In addition, the thinner the thickness of the mask sheet 323 constituting the mask portion 32 and the smaller the size of the mask hole 32H, the easier it is for the yield of the mask portion 32 to decrease. Therefore, the configuration in which each mask frame hole 33 has one mask portion 32 is suitable also for the metal mask 30 for vapor deposition requiring high definition.

如图7(a)的例子所示那样,掩模框架31例如具有3个掩模框架孔33,作为多个掩模框架孔33。如图7(b)的例子所示那样,蒸镀用金属掩模30具备多个掩模框架孔33所共用的一个掩模部32。即,划分出掩模框架孔33A的框架内侧边缘部31E、划分出掩模框架孔33B的框架内侧边缘部31E、以及划分出掩模框架孔33C的框架内侧边缘部31E,与它们所共用的一个掩模部32接合。As shown in the example of FIG. 7( a ), the mask frame 31 has, for example, three mask frame holes 33 as a plurality of mask frame holes 33 . As shown in the example of FIG.7(b), the metal mask 30 for vapor deposition is equipped with the one mask part 32 shared by the some mask frame hole 33. As shown in FIG. That is, the frame inner edge portion 31E defining the mask frame hole 33A, the frame inner edge portion 31E defining the mask frame hole 33B, and the frame inner edge portion 31E defining the mask frame hole 33C are shared with them. One mask portion 32 is bonded.

此外,如果是一个掩模框架31所需要的掩模孔32H的数量通过一个掩模部32来承担的构成,则能够使与掩模框架31接合的掩模部32的数量成为一个。因此,能够减轻掩模框架31与掩模部32的接合所需的负荷。并且,构成掩模部32的掩模片323的厚度越厚,掩模孔32H的尺寸越大,则掩模部32的成品率越容易提高。因此,具备各掩模框架孔33所共用的掩模部32的构成,对于要求低分辨率的蒸镀用金属掩模30较适合。In addition, if the number of mask holes 32H required for one mask frame 31 is covered by one mask portion 32 , the number of mask portions 32 joined to the mask frame 31 can be reduced to one. Therefore, the load required for bonding the mask frame 31 and the mask portion 32 can be reduced. In addition, the thicker the mask sheet 323 constituting the mask portion 32 and the larger the size of the mask hole 32H, the easier it is to improve the yield of the mask portion 32 . Therefore, the configuration including the mask portion 32 shared by the respective mask frame holes 33 is suitable for the metal mask 30 for vapor deposition requiring low resolution.

[蒸镀用金属掩模的制造方法][Manufacturing method of metal mask for vapor deposition]

接下来,对蒸镀用金属掩模的制造方法的各例进行说明。此外,图8以及图9分别表示使用了湿式蚀刻的制造方法中所利用的蒸镀用金属掩模基材的一个例子。图10表示蒸镀用金属掩模基材所具备的金属片32S的片对象面的特性。图11表示金属片32S所具备的片对象面的反射率。片对象面的一部分包含掩模片323的平滑面。片对象面遍及片对象面的整体具有与平滑面相同的表面特性。Next, each example of the manufacturing method of the metal mask for vapor deposition is demonstrated. In addition, FIG. 8 and FIG. 9 each show an example of the metal mask base material for vapor deposition used in the manufacturing method using wet etching. FIG. 10 shows the characteristics of the sheet-object surface of the metal sheet 32S included in the metal mask base material for vapor deposition. FIG. 11 shows the reflectance of the sheet object surface included in the metal sheet 32S. A part of the sheet object surface includes a smooth surface of the mask sheet 323 . The sheet object surface has the same surface properties as the smooth surface throughout the entirety of the sheet object surface.

此外,参照图12对通过湿式蚀刻形成掩模孔的方法的一个例子进行说明。此外,参照图13对通过电解形成掩模孔的方法的一个例子进行说明。参照图14对通过电解形成掩模孔的方法的其他例子进行说明。In addition, an example of a method of forming a mask hole by wet etching will be described with reference to FIG. 12 . In addition, an example of a method of forming a mask hole by electrolysis will be described with reference to FIG. 13 . Another example of a method of forming a mask hole by electrolysis will be described with reference to FIG. 14 .

此外,制造图2中说明的蒸镀用金属掩模30的方法与制造图3中说明的蒸镀用金属掩模30的方法相比,对掩模片323的基材即蒸镀用金属掩模基材32K进行的蚀刻的方式不同,但其以外的工序几乎同样。在以下,主要对图2中说明的蒸镀用金属掩模30的制造方法进行说明,关于图3中说明的蒸镀用金属掩模30的制造方法,省略其重复的说明。In addition, compared with the method of manufacturing the metal mask 30 for vapor deposition described in FIG. 2 and the method of manufacturing the metal mask 30 for vapor deposition described in FIG. The method of etching the mold base material 32K is different, but the other steps are almost the same. Hereinafter, the method of manufacturing the metal mask 30 for vapor deposition described in FIG. 2 will be mainly described, and the redundant description of the method of manufacturing the metal mask 30 for vapor deposition described in FIG. 3 will be omitted.

金属片32S具备掩模表面322和掩模背面321。The metal sheet 32S has a mask surface 322 and a mask back surface 321 .

在掩模表面322上形成抗蚀掩模、通过从掩模表面322开始进行的蚀刻来形成掩模片323的方法中,掩模表面322为片对象面。在掩模表面322和掩模背面321上形成各自的抗蚀掩模、通过从掩模表面322开始进行的蚀刻和从掩模背面321开始进行的蚀刻来形成掩模片323的方法中,掩模表面322和掩模背面321为片对象面。片对象面是在蒸镀用金属掩模形成的过程中被形成抗蚀掩模的面。In the method of forming a resist mask on the mask surface 322 and forming the mask piece 323 by etching from the mask surface 322 , the mask surface 322 is a piece object surface. In the method of forming respective resist masks on the mask surface 322 and the mask back surface 321, and forming the mask piece 323 by etching from the mask surface 322 and etching from the mask back surface 321, the mask The mold surface 322 and the mask backside 321 are sheet object surfaces. The sheet object surface is a surface on which a resist mask is formed in the process of forming a metal mask for vapor deposition.

构成金属片32S的材料为镍或铁镍合金,例如为含有30质量%以上的镍的铁镍合金,为这其中的以36质量%的镍和64质量%的铁的合金为主成分的因瓦铁镍合金。在金属片32S为因瓦铁镍合金片的情况下,金属片32S的热膨胀系数例如为1.2×10-6/℃程度。如果是具有这样的热膨胀系数的金属片32S,则使用金属片32S而制造的掩模部32的热膨胀的程度、与玻璃基板的热膨胀的程度相匹配,因此作为蒸镀对象的一个例子适合使用玻璃基板。The material constituting the metal sheet 32S is nickel or an iron-nickel alloy, for example, an iron-nickel alloy containing more than 30% by mass of nickel, and this is because an alloy of 36% by mass of nickel and 64% by mass of iron is the main component. Iron-nickel alloy. When the metal piece 32S is an Invar piece, the thermal expansion coefficient of the metal piece 32S is, for example, about 1.2×10 −6 /°C. If the metal sheet 32S having such a thermal expansion coefficient is used, the degree of thermal expansion of the mask portion 32 manufactured using the metal sheet 32S matches the degree of thermal expansion of the glass substrate, so glass is suitably used as an example of the vapor deposition target. substrate.

金属片32S具有的厚度T1例如为1μm以上100μm以下,优选为1μm以上50μm以下,更优选为2μm以上40μm以下。如果金属片32S所具有的厚度T1为40μm以下,则能够使形成于金属片32S的孔的深度为40μm以下。具有这样的厚度T1的金属片32S,在使用金属片32S而制造的蒸镀用金属掩模中在以下方面较优良。即,在从朝向蒸镀用金属掩模飞行的蒸镀粒子观察成膜对象时,能够减小由于蒸镀用金属掩模而成为不希望的遮挡的部分。换言之,能够抑制阴影效应。The thickness T1 of the metal sheet 32S is, for example, 1 μm to 100 μm, preferably 1 μm to 50 μm, more preferably 2 μm to 40 μm. If the thickness T1 which the metal piece 32S has is 40 micrometers or less, the depth of the hole formed in the metal piece 32S can be made into 40 micrometers or less. The metal sheet 32S having such a thickness T1 is excellent in the following points in the metal mask for vapor deposition manufactured using the metal sheet 32S. That is, when the film formation target is observed from the vapor deposition particles flying toward the vapor deposition metal mask, it is possible to reduce the portion that is undesirably blocked by the vapor deposition metal mask. In other words, shadow effects can be suppressed.

金属片32S所具有的片对象面的表面特性优选满足下述[条件1]以及[条件2]的至少一方。It is preferable that the surface properties of the sheet object surface of the metal sheet 32S satisfy at least one of the following [Condition 1] and [Condition 2].

[条件1]三维表面粗糙度Sa≦0.019μm以下且三维表面粗糙度Sz≦0.308μm以下。[Condition 1] Three-dimensional surface roughness Sa≦0.019 μm or less and three-dimensional surface roughness Sz≦0.308 μm or less.

[条件2]53.0%≦对象面的反射率R≦97.0%。[Condition 2] 53.0%≦reflectance R≦97.0% of the target surface.

三维表面粗糙度Sa以及Sz是通过依据ISO 25178的方法来测定的值。通过测定从卤素灯射出的光入射到对象面时的镜面反射的反射光,根据下述式(2)来计算反射率R。从卤素灯射出的光相对于对象面的法线方向以45°±0.2°的入射角度向对象面的14mm2的区域入射。对反射光进行受光的元件的面积为11.4mm2The three-dimensional surface roughness Sa and Sz are values measured by a method based on ISO 25178. The reflectance R was calculated from the following formula (2) by measuring the reflected light of the specular reflection when the light emitted from the halogen lamp was incident on the target surface. The light emitted from the halogen lamp is incident on the area of 14mm2 of the target surface at an incident angle of 45°±0.2° relative to the normal direction of the target surface. The area of the element that receives the reflected light is 11.4 mm 2 .

反射率R=[镜面反射的反射光的光量/入射光的光量]×100…(2)Reflectance R=[light amount of reflected light reflected by mirror surface/light amount of incident light]×100...(2)

如果是满足[条件1]以及[条件2]的至少一方的表面特性,则能够抑制向对象面照射的光由于对象面而散射。并且,在向位于抗蚀剂对象面的抗蚀剂层照射光时,能够抑制光的一部分由于对象面而散射,且所散射的光对抗蚀剂层中的曝光对象区域以外的区域进行照射。结果,能够抑制通过曝光以及显影而形成的抗蚀掩模的构造与所设计的抗蚀掩模的构造之间产生差异,并能够抑制通过湿式蚀刻法而形成的掩模孔32H的构造与所设计的掩模孔32H的构造之间产生差异。If the surface properties satisfy at least one of [Condition 1] and [Condition 2], it is possible to suppress scattering of light irradiated on the target surface by the target surface. In addition, when light is irradiated to the resist layer on the resist target surface, it is possible to suppress a part of the light from being scattered by the target surface, and the scattered light can irradiate regions other than the exposure target region in the resist layer. As a result, the difference between the structure of the resist mask formed by exposure and development and the designed resist mask can be suppressed, and the structure of the mask hole 32H formed by wet etching can be suppressed from being different from the designed one. A difference occurs between the configurations of the designed mask holes 32H.

此外,如图9所示,蒸镀用金属掩模基材除了金属片32S以外,还能够在掩模背面321和掩模表面322的至少一方还具备树脂体PB。即,蒸镀用金属掩模基材能够作为金属片32S与树脂体PB的层叠体而具体化。构成位于掩模表面322的树脂体PB的材料为抗蚀剂。构成位于掩模背面321的树脂体PB的材料例如为抗蚀剂、聚酰亚胺。In addition, as shown in FIG. 9 , the metal mask base material for vapor deposition can further include a resin body PB on at least one of the mask back surface 321 and the mask surface 322 in addition to the metal sheet 32S. That is, the metal mask base material for vapor deposition can be embodied as a laminated body of the metal sheet 32S and the resin body PB. The material constituting the resin body PB on the mask surface 322 is a resist. The material constituting the resin body PB located on the mask back surface 321 is, for example, resist or polyimide.

在构成树脂体PB的材料为抗蚀剂的情况下,树脂体PB为抗蚀剂层。作为树脂体PB的抗蚀剂层在被形成为片形状之后,被粘贴到掩模表面322。或者,作为树脂体PB的抗蚀剂层通过将用于形成抗蚀剂层的涂液涂敷到掩模表面322来形成。When the material constituting the resin body PB is a resist, the resin body PB is a resist layer. The resist layer as the resin body PB is pasted to the mask surface 322 after being formed into a sheet shape. Alternatively, the resist layer as the resin body PB is formed by applying a coating liquid for forming a resist layer to the mask surface 322 .

在构成树脂体PB的材料为聚酰亚胺的情况下,树脂体PB紧贴于掩模背面321。聚酰亚胺具有的热膨胀系数以及其温度的依存性,与因瓦铁镍合金的热膨胀系数以及其温度的依存性为相同程度,因此通过由树脂体PB的温度变化而产生的树脂体PB的膨胀、收缩,抑制金属片32S产生翘曲。When the material constituting the resin body PB is polyimide, the resin body PB is in close contact with the mask back surface 321 . The thermal expansion coefficient of polyimide and its temperature dependence are about the same as those of Invar and its temperature dependence. Therefore, the temperature of the resin body PB produced by the temperature change of the resin body PB Expansion and contraction prevent warping of the metal sheet 32S.

树脂体PB的厚度T2例如为5μm以上50μm以下。从提高树脂体PB与金属片32S的层叠体的机械强度的观点出发,树脂体PB的厚度T2优选为5μm以上。此外,在形成掩模部32的过程中,有时通过向碱性溶液等浸渍来从金属片32S除去树脂体PB。从抑制这种除去所需要的时间变得过长的观点出发,树脂体PB的厚度优选为50μm以下。The thickness T2 of the resin body PB is, for example, not less than 5 μm and not more than 50 μm. From the viewpoint of improving the mechanical strength of the laminated body of the resin body PB and the metal sheet 32S, the thickness T2 of the resin body PB is preferably 5 μm or more. In addition, in the process of forming the mask part 32, the resin body PB may be removed from the metal piece 32S by immersing in alkaline solution etc. in some cases. From the viewpoint of suppressing the time required for such removal from becoming too long, the thickness of the resin body PB is preferably 50 μm or less.

金属片的制造方法使用如下方法中的任一种:(A)电解;(B)轧制以及研磨;(C)电解以及研磨;(D)仅轧制。The manufacturing method of the metal sheet used any of the following methods: (A) electrolysis; (B) rolling and grinding; (C) electrolysis and grinding; (D) rolling only.

此外,在形成用于制造金属片32S的轧制用的母材时,通常,将在用于形成轧制用的母材的材料中混入的氧除去。在将混入材料中的氧除去时,例如,将粒状的铝、镁等脱氧剂混合到用于形成母材的材料中。作为结果,铝、镁作为氧化铝、氧化镁等金属氧化物而包含于母材。在母材被轧制之前,金属氧化物的大部分被从母材除去。另一方面,金属氧化物的一部分残留于成为轧制的对象的母材。在这一点,根据使用电解的制造方法,能够抑制金属氧化物混入金属片32S。In addition, when forming the base material for rolling for manufacturing the metal sheet 32S, oxygen mixed in the material for forming the base material for rolling is generally removed. When removing oxygen mixed in the material, for example, a deoxidizer such as granular aluminum or magnesium is mixed with the material for forming the base material. As a result, aluminum and magnesium are contained in the base material as metal oxides such as alumina and magnesia. Before the base metal is rolled, most of the metal oxides are removed from the base metal. On the other hand, a part of the metal oxide remains in the base material to be rolled. In this regard, according to the manufacturing method using electrolysis, it is possible to suppress the mixing of metal oxides into the metal piece 32S.

(A)电解(A) electrolysis

在作为金属片32S的制造方法而使用电解的情况下,在电解所使用的电极的表面形成金属片32S。然后,从电极的表面分离金属片32S。由此,制造出具有成为片对象面的掩模表面322、以及之前与电极的表面接触的面即掩模背面321的金属片32S。在电极的表面具有与片对象面为相同程度的表面特性的情况下,金属片32S的掩模表面322和掩模背面321的双方具有与片对象面相当的表面特性。在电极的表面具有比片对象面大的表面粗糙度、比片对象面低的反射率的情况下,金属片32S的掩模表面322具有与片对象面相当的表面特性。此外,在掩模表面322和掩模背面321的双方具有与片对象面相当的表面特性的构成中,在片对象面上形成抗蚀剂层时,能够减轻掩模表面322与掩模背面321的区别所需要的负荷。此外,所分离的金属片32S也可以在被分离之后被实施退火处理。When electrolysis is used as a method of manufacturing the metal piece 32S, the metal piece 32S is formed on the surface of an electrode used for electrolysis. Then, the metal piece 32S is separated from the surface of the electrode. In this way, the metal sheet 32S having the mask surface 322 serving as the sheet object surface and the mask back surface 321 which is the surface previously in contact with the electrode surface is manufactured. When the surface of the electrode has the same level of surface properties as the sheet target surface, both the mask surface 322 and the mask back surface 321 of the metal sheet 32S have surface properties equivalent to the sheet target surface. When the surface of the electrode has larger surface roughness and lower reflectance than the sheet target surface, the mask surface 322 of the metal sheet 32S has surface characteristics equivalent to the sheet target surface. In addition, in the configuration in which both the mask surface 322 and the mask back surface 321 have surface properties equivalent to those of the sheet object surface, when a resist layer is formed on the sheet object surface, the mask surface 322 and the mask back surface 321 can be relieved. difference in the required load. In addition, the separated metal piece 32S may be annealed after being separated.

电解所使用的电解浴例如包含铁离子供给剂、镍离子供给剂以及pH缓冲剂。此外,电解所使用的电解浴也可以是含有应力缓和剂、Fe3+离子掩模剂、苹果酸、柠檬酸等络合剂等,而被调整为适合于电解的pH的弱酸性的溶液。铁离子供给剂例如为硫酸亚铁七水合物、氯化亚铁、氨基磺酸铁等。镍离子供给剂例如为硫酸镍(II)、氯化镍(II)、氨基磺酸酸镍、溴化镍。pH缓冲剂例如为硼酸、丙二酸。丙二酸还作为Fe3+离子掩模剂起作用。应力缓和剂例如为糖精钠。电解所使用的电解浴例如是含有上述添加剂的水溶液,并通过5%硫酸或者碳酸镍等pH调整剂将pH调整为例如2以上3以下。The electrolytic bath used for electrolysis contains, for example, an iron ion supplier, a nickel ion supplier, and a pH buffer. In addition, the electrolytic bath used for electrolysis may contain a stress relieving agent, a Fe 3+ ion masking agent, a complexing agent such as malic acid, citric acid, etc., and may be a weakly acidic solution adjusted to a pH suitable for electrolysis. The iron ion supplier is, for example, ferrous sulfate heptahydrate, ferrous chloride, iron sulfamate, or the like. The nickel ion supplier is, for example, nickel(II) sulfate, nickel(II) chloride, nickel sulfamate, or nickel bromide. pH buffering agents are, for example, boric acid, malonic acid. Malonic acid also functions as a masking agent for Fe 3+ ions. A stress relieving agent is, for example, sodium saccharin. The electrolytic bath used for electrolysis is, for example, an aqueous solution containing the above-mentioned additives, and the pH is adjusted to, for example, 2 or more and 3 or less with a pH regulator such as 5% sulfuric acid or nickel carbonate.

电解所使用的电解条件是片对象面所具有的表面特性以及金属片32S中的镍的组成比等根据电解浴的温度、电流密度以及电解时间而被调整的条件。使用了上述电解浴的电解条件下的阳极例如为纯铁和镍。电解条件下的阴极例如为SUS304等不锈钢板。电解浴的温度例如为40℃以上60℃以下。电流密度例如为1A/dm2以上4A/dm2以下。The electrolysis conditions used for the electrolysis are conditions in which the surface properties of the sheet object surface, the composition ratio of nickel in the metal sheet 32S, and the like are adjusted according to the temperature of the electrolytic bath, current density, and electrolysis time. The anode under the electrolytic conditions using the electrolytic bath is, for example, pure iron and nickel. The cathode under electrolysis conditions is, for example, a stainless steel plate such as SUS304. The temperature of the electrolytic bath is, for example, not less than 40°C and not more than 60°C. The current density is, for example, not less than 1 A/dm 2 and not more than 4 A/dm 2 .

(B)研磨(B) grinding

研磨前的金属片32S可以通过电解来制造,也可以通过轧制来制造。通过轧制来制造研磨前的金属片32S的方法中,首先对金属制的母材进行轧制,然后对轧制后的母材进行退火。此时,研磨前的金属片32S的表面的阶梯差比母材的表面的阶梯差小。此外,研磨前的金属片32S的背面的阶梯差比母材的背面的阶梯差小。然后,对研磨前的金属片32S的表面,实施化学的或者电气的研磨加工。由此,制造出具有研磨面即片对象面的金属片32S。The metal piece 32S before grinding may be manufactured by electrolysis, or may be manufactured by rolling. In the method of manufacturing the unpolished metal sheet 32S by rolling, first, a metallic base material is rolled, and then the rolled base material is annealed. At this time, the level difference on the surface of the metal piece 32S before grinding is smaller than the level difference on the surface of the base material. In addition, the level difference of the back surface of the metal piece 32S before grinding|polishing is smaller than the level difference of the back surface of a base material. Then, chemical or electrical polishing is performed on the surface of the metal piece 32S before polishing. Thus, the metal sheet 32S having a polished surface, that is, a sheet target surface, is produced.

化学研磨所使用的研磨液例如是以过氧化氢为主成分的铁系合金用的化学研磨液。电研磨所使用的电解液是高氯酸系的电解研磨液、硫酸系的电解研磨液。此外,研磨前的金属片32S例如能够具体化为,轧制后的金属制片通过基于酸性蚀刻液的湿式蚀刻而加工得较薄的片。The polishing liquid used in the chemical polishing is, for example, a chemical polishing liquid for an iron-based alloy mainly composed of hydrogen peroxide. Electrolytic solutions used in electropolishing are perchloric acid-based electrolytic polishing solutions and sulfuric acid-based electrolytic polishing solutions. In addition, the metal sheet 32S before grinding can be embodied, for example, as a sheet in which a rolled metal sheet is processed thinner by wet etching with an acidic etchant.

参照图10以及图11,对金属片32S的三维表面粗糙度Sa、三维表面粗糙度Sz、反射率R以及抗蚀掩模的加工精度的一个例子进行说明。图10表示从试验例1到试验例9的各水准的三维表面粗糙度Sa、三维表面粗糙度Sz以及反射率R。图11表示在从试验例1到试验例9的各水准中、成为代表性的例子的试验例1、试验例2、试验例3、试验例9各自的反射率。An example of the three-dimensional surface roughness Sa, the three-dimensional surface roughness Sz, the reflectance R, and the processing accuracy of the resist mask of the metal sheet 32S will be described with reference to FIGS. 10 and 11 . FIG. 10 shows the three-dimensional surface roughness Sa, the three-dimensional surface roughness Sz, and the reflectance R of each level from Test Example 1 to Test Example 9. FIG. FIG. 11 shows the respective reflectances of Test Example 1, Test Example 2, Test Example 3, and Test Example 9, which are representative examples in each level from Test Example 1 to Test Example 9. FIG.

如图10所示那样,试验例1、试验例2、试验例3、试验例6、试验例7分别是利用上述(A)电解来制造的厚度为20μm的金属片32S。试验例4、试验例5分别是通过对利用(B)轧制来制造的金属片32S进行研磨而制造的、厚度为20μm的金属片32S。此外,通过(A)电解而制造的金属片32S具有与电极接触的面。此时,SUS制的电极的三维表面粗糙度Sa为0.018μm,三维表面粗糙度Sz为0.170μm。试验例8、试验例9分别是通过轧制而制造的金属片32S,且是未施加研磨的金属片32S。试验例8、试验例9各自的厚度比试验例4、试验例5各自的厚度,厚了试验例4和试验例5的研磨量即10μm。As shown in FIG. 10 , each of Test Example 1, Test Example 2, Test Example 3, Test Example 6, and Test Example 7 is a metal sheet 32S having a thickness of 20 μm produced by electrolysis (A) above. Test Example 4 and Test Example 5 are metal pieces 32S each having a thickness of 20 μm produced by grinding the metal piece 32S produced by (B) rolling. Moreover, the metal piece 32S manufactured by (A) electrolysis has the surface which contacts an electrode. At this time, the three-dimensional surface roughness Sa of the electrode made of SUS was 0.018 μm, and the three-dimensional surface roughness Sz was 0.170 μm. Test Example 8 and Test Example 9 are the metal pieces 32S manufactured by rolling, respectively, and are the metal pieces 32S not subjected to grinding. The respective thicknesses of Test Example 8 and Test Example 9 are 10 μm thicker than the respective thicknesses of Test Example 4 and Test Example 5, which is the polishing amount of Test Example 4 and Test Example 5.

试验例1、试验例2、试验例3、试验例6、试验例7分别通过使用添加了下述添加物的水溶液、且被调整为pH2.3的电解浴,并将电流密度在1(A/dm2)以上4(A/dm2)以下的范围中进行变更而得到。试验例1、试验例2、试验例3、试验例6、试验例7各自的铁与镍的组成比相互不同。Test example 1, test example 2, test example 3, test example 6, test example 7 are respectively by using the aqueous solution that has added following additive, and be adjusted to the electrolytic bath of pH2.3, and current density is at 1 (A /dm 2 ) to 4 (A/dm 2 ) or less. In Test Example 1, Test Example 2, Test Example 3, Test Example 6, and Test Example 7, the composition ratios of iron and nickel are different from each other.

(试验例用电解液)(Electrolyte for test example)

·硫酸亚铁水合物: 83.4g· Ferrous sulfate hydrate: 83.4g

·硫酸镍(II)六水和物: 250.0g・Nickel(II) sulfate hexahydrate: 250.0g

·氯化镍(II)六水和物: 40.0g・Nickel(II) chloride hexahydrate: 40.0g

·硼酸: 30.0g· Boric acid: 30.0g

·糖精钠水二和物: 2.0g·Saccharin sodium water mixture: 2.0g

·丙二酸: 5.2gMalonic acid: 5.2g

·温度: 50℃·Temperature: 50℃

试验例4、试验例5分别对通过轧制得到的研磨前的金属片32S实施使用了过氧化氢系的化学研磨液的化学研磨而得到。Experiment 4 and Experiment 5 were obtained by performing chemical polishing using a hydrogen peroxide-based chemical polishing liquid on the unpolished metal sheet 32S obtained by rolling, respectively.

试验例8、试验例9分别是在试验例4、5中通过轧制得到的金属片32S,且是未实施化学研磨的水准。Test Example 8 and Test Example 9 are metal pieces 32S obtained by rolling in Test Examples 4 and 5, respectively, and are at a level where chemical polishing is not performed.

在从试验例1到试验例7的各水准中,能够确认到片对象面的三维表面粗糙度Sa为0.019μm以下,且片对象面的三维表面粗糙度Sz为0.308μm以下。与此相对,在试验例8、试验例9的各水准,片对象面的三维表面粗糙度Sa大致为0.04μm。由此,能够确认到:在通过上述(A)电解、(B)轧制以及研磨而制造的金属片32S中,随着得到厚度较薄的金属片32S,三维表面粗糙度Sa被大幅度降低。此外,在试验例8、试验例9的各水准中,片对象面的三维表面粗糙度Sz为0.35μm以上。由此,能够确认到:在通过上述(A)电解、(B)轧制以及研磨而制造的金属片32S中,随着得到厚度较薄的金属片32S,三维表面粗糙度Sz被降低。In each level from Test Example 1 to Test Example 7, it was confirmed that the three-dimensional surface roughness Sa of the sheet target surface was 0.019 μm or less, and the three-dimensional surface roughness Sz of the sheet target surface was 0.308 μm or less. On the other hand, in each level of Test Example 8 and Test Example 9, the three-dimensional surface roughness Sa of the sheet object surface was approximately 0.04 μm. From this, it can be confirmed that in the metal sheet 32S produced by the above (A) electrolysis, (B) rolling, and grinding, the three-dimensional surface roughness Sa is greatly reduced as the thinner metal sheet 32S is obtained. . In addition, in each level of Test Example 8 and Test Example 9, the three-dimensional surface roughness Sz of the sheet facing surface was 0.35 μm or more. From this, it was confirmed that the three-dimensional surface roughness Sz was reduced as the thinner metal sheet 32S was obtained in the metal sheet 32S produced by the above-mentioned (A) electrolysis, (B) rolling, and grinding.

如图10以及图11所示那样,在从试验例1到试验例3的各水准中,能够确认到:上述反射率R为53.0%以上97.0%以下。与此相对,在试验例8、试验例9的各水准中,能够确认到:反射率R比53.0%小,并且具有比其他试验例大的半值宽度。由此,能够确认到:如果是通过上述(A)电解、(B)轧制以及研磨而制造的金属片32S,则能够得到53.0%以上的较大的反射率R。As shown in FIGS. 10 and 11 , in each level from Test Example 1 to Test Example 3, it was confirmed that the above-mentioned reflectance R was 53.0% or more and 97.0% or less. On the other hand, in each level of Test Example 8 and Test Example 9, it was confirmed that the reflectance R was smaller than 53.0% and had a larger half width than the other Test Examples. From this, it was confirmed that a large reflectance R of 53.0% or more can be obtained in the metal sheet 32S produced by the above-mentioned (A) electrolysis, (B) rolling, and grinding.

能够确认到:在从试验例1到试验例7各自的片对象面上形成的抗蚀掩模的最小分辨率的尺寸为,在通过紫外光的曝光在抗蚀剂层形成圆形孔时,分散在4μm以上5μm以下的范围内。另一方面,在试验例8、试验例9各自的片对象面上通过同样的制法形成的抗蚀掩模的最小分辨率尺寸为,在通过紫外光的曝光而在抗蚀剂层形成圆形孔时,为7μm以上。It can be confirmed that the size of the minimum resolution of the resist mask formed on each of the sheet object surfaces of Test Example 1 to Test Example 7 is, when a circular hole is formed in the resist layer by exposure to ultraviolet light, Dispersion is within the range of 4 μm to 5 μm. On the other hand, the minimum resolution size of the resist mask formed by the same manufacturing method on the respective sheet surfaces of Test Example 8 and Test Example 9 is that when a circle is formed on the resist layer by exposure to ultraviolet light, When forming a hole, it is 7 μm or more.

如图12(a)~(h)所示的例子那样,在蒸镀用金属掩模的制造方法的一个例子中,首先,准备掩模片323的基材即蒸镀用金属掩模基材32K(参照图12(a))。此外,蒸镀用金属掩模基材32K除了被加工为掩模片323的金属片32S之外,优选还具备用于对金属片32S进行支撑的支撑体SP。接着,在蒸镀用金属掩模基材32K所具有的掩模表面322上形成抗蚀剂层PR(参照图12(b)),进行对于抗蚀剂层PR的曝光以及显影。由此,在掩模表面322上形成抗蚀掩模RM(参照图12(c))。接下来,通过使用了抗蚀掩模RM的从掩模表面322开始的湿式蚀刻,在蒸镀用金属掩模基材32K形成掩模孔32H(参照图12(d))。此时,在开始了从掩模表面322朝向掩模背面321的湿式蚀刻的掩模表面322,形成表面开口H2,在比其更延迟地进行蚀刻的掩模背面321,形成比表面开口H2小的背面开口H1。接着,从掩模表面322除去抗蚀掩模RM,由此制造出上述掩模部32(参照图12(e))。最后,将掩模表面322的外周边缘部32E与掩模框架31的框架内侧边缘部31E接合,并将支撑体SP从掩模部32脱模,由此制造出蒸镀用金属掩模30(参照图12(f)至(h))。As in the examples shown in FIGS. 12( a ) to ( h ), in one example of the method of manufacturing a metal mask for vapor deposition, first, a metal mask base material for vapor deposition that is a base material of the mask sheet 323 is prepared. 32K (see Fig. 12(a)). In addition, it is preferable that the metal mask base material 32K for vapor deposition is equipped with the support body SP for supporting the metal sheet 32S other than the metal sheet 32S processed into the mask sheet 323. Next, a resist layer PR is formed on the mask surface 322 of the vapor deposition metal mask base material 32K (see FIG. 12( b )), and exposure and development of the resist layer PR are performed. Thus, a resist mask RM is formed on the mask surface 322 (see FIG. 12( c )). Next, by wet etching from the mask surface 322 using the resist mask RM, the mask hole 32H is formed in the vapor deposition metal mask base material 32K (see FIG. 12( d )). At this time, a surface opening H2 is formed on the mask surface 322 where wet etching from the mask surface 322 toward the mask back surface 321 has started, and a surface opening H2 smaller than the surface opening H2 is formed on the mask back surface 321 that is etched later than that. The back opening H1. Next, the resist mask RM is removed from the mask surface 322 to manufacture the above-mentioned mask portion 32 (see FIG. 12( e )). Finally, the outer peripheral edge portion 32E of the mask surface 322 is joined to the frame inner edge portion 31E of the mask frame 31, and the support body SP is released from the mask portion 32, thereby manufacturing the metal mask 30 for vapor deposition ( Referring to Figure 12 (f) to (h)).

此外,在图3中说明的蒸镀用金属掩模30的制造方法中,对不具有支撑体SP的蒸镀用金属掩模基材32K,对与掩模背面321对应的蒸镀用金属掩模基材32K的面,实施上述工序。由此,形成掩模小孔32SH。接着,将用于保护掩模小孔32SH的抗蚀剂等填充于掩模小孔32SH。接着,对与掩模表面322对应的蒸镀用金属掩模基材32K的面,实施上述工序,由此制造出掩模部32。In addition, in the manufacturing method of the vapor deposition metal mask 30 demonstrated in FIG. The surface of the mold base material 32K is subjected to the above steps. Thus, the mask hole 32SH is formed. Next, a resist or the like for protecting the mask hole 32SH is filled in the mask hole 32SH. Next, the above-described steps are performed on the surface of the vapor deposition metal mask base material 32K corresponding to the mask surface 322 , thereby manufacturing the mask portion 32 .

例如,在掩模片323由铁镍合金制的金属片构成的情况下,在准备蒸镀用金属掩模基材32K的工序中,使用电解、轧制。作为蒸镀用金属掩模基材32K的后处理,适当地使用研磨、退火等。For example, when the mask sheet 323 is formed of a metal sheet made of an iron-nickel alloy, electrolysis and rolling are used in the process of preparing the metal mask base material 32K for vapor deposition. As the post-processing of the vapor deposition metal mask base material 32K, polishing, annealing, and the like are appropriately used.

在使用支撑体SP的情况下,例如,支撑体SP与形成于电极表面的金属片32S接合。接着,作为金属片32S与支撑体SP的层叠体,蒸镀用金属掩模基材32K从电极表面分离。In the case of using the support body SP, for example, the support body SP is bonded to the metal piece 32S formed on the surface of the electrode. Next, as a laminated body of the metal sheet 32S and the support body SP, the metal mask base material 32K for vapor deposition is separated from the electrode surface.

在使用轧制的情况下,对用于制造金属片32S的母材进行轧制,然后,对通过轧制而制造的金属片32S退火,由此得到蒸镀用金属掩模基材32K。此时,在使用支撑体SP的情况下,支撑体SP与通过轧制而制造的金属片32S接合。When rolling is used, the base material for manufacturing the metal sheet 32S is rolled, and then the metal sheet 32S manufactured by rolling is annealed to obtain the vapor deposition metal mask base material 32K. At this time, in the case of using the support body SP, the support body SP is joined to the metal piece 32S produced by rolling.

此外,通过电解而得到的金属片32S、通过轧制而得到的金属片32S,可以通过基于酸性蚀刻液的湿式蚀刻而加工得更薄,也可以通过化学机械研磨而加工得更薄。In addition, the metal sheet 32S obtained by electrolysis and the metal sheet 32S obtained by rolling may be processed thinner by wet etching with an acidic etchant, or may be processed thinner by chemical mechanical polishing.

在图12(f)所示的例子中,作为将掩模表面322的外周边缘部32E与掩模框架31的框架内侧边缘部31E接合的方法,使用电阻焊接。此时,在具有绝缘性的支撑体SP形成多个贯通孔SPH。各贯通孔SPH形成于支撑体SP中的、与成为接合部32BN的部位对置的部位。然后,在对掩模部32施加了朝向掩模部32的外侧的应力的状态下,利用经由贯通孔SPH的通电,形成间歇的接合部32BN。由此,对外周边缘部32E与框架内侧边缘部31E进行熔敷。In the example shown in FIG. 12( f ), resistance welding is used as a method of joining the outer peripheral edge portion 32E of the mask surface 322 and the frame inner edge portion 31E of the mask frame 31 . At this time, a plurality of through-holes SPH are formed in the insulating support body SP. Each of the through-holes SPH is formed in a portion of the support body SP that faces a portion serving as the bonding portion 32BN. Then, intermittent bonding portions 32BN are formed by energization through the through-holes SPH in a state where a stress toward the outside of the mask portion 32 is applied to the mask portion 32 . Thus, the outer peripheral edge portion 32E and the frame inner edge portion 31E are welded.

在图12(g)所示的例子中,作为将掩模表面322的外周边缘部32E与掩模框架31的框架内侧边缘部31E接合的方法,使用激光焊接。此时,使用具有透光性的支撑体SP,经由支撑体SP向成为接合部32BN的部位照射激光L。然后,通过间歇地照射激光L,由此形成间歇的接合部32BN,或者通过连续地持续照射激光L,由此形成连续的接合部32BN。由此,将外周边缘部32E与框架内侧边缘部31E进行熔敷。此外,在对掩模部32施加了朝向掩模部32的外侧的应力的状态下支撑体SP对掩模部32进行支撑的情况下,在该焊接中也能够省略对掩模部32的应力施加。In the example shown in FIG. 12( g ), laser welding is used as a method of joining the outer peripheral edge portion 32E of the mask surface 322 and the frame inner edge portion 31E of the mask frame 31 . At this time, using the support body SP which has translucency, the laser beam L is irradiated to the site|part which becomes the junction part 32BN via the support body SP. Then, the intermittent bonding portion 32BN is formed by intermittently irradiating the laser light L, or the continuous bonding portion 32BN is formed by continuously irradiating the laser L. Thus, the outer peripheral edge portion 32E and the frame inner edge portion 31E are welded. In addition, when the support body SP supports the mask part 32 in the state where the stress toward the outside of the mask part 32 is applied to the mask part 32, the stress to the mask part 32 can also be omitted in this welding. apply.

在图12(h)所示的例子中,作为将掩模表面322的外周边缘部32E与掩模框架31的框架内侧边缘部31E接合的方法,使用超声波焊接。此时,外周边缘部32E与框架内侧边缘部31E被夹具CP等夹持,对成为接合部32BN的部位施加超声波。被直接施加超声波的部件可以是掩模框架31,也可以是掩模部32。此外,在使用超声波焊接的情况下,在掩模框架31、支撑体SP形成有基于夹具CP的按压痕。In the example shown in FIG. 12( h ), ultrasonic welding is used as a method of joining the outer peripheral edge portion 32E of the mask surface 322 and the frame inner edge portion 31E of the mask frame 31 . At this time, the outer peripheral edge portion 32E and the frame inner edge portion 31E are clamped by the clamp CP or the like, and ultrasonic waves are applied to the portion to be the joining portion 32BN. The member to which ultrasonic waves are directly applied may be the mask frame 31 or the mask portion 32 . Moreover, when ultrasonic welding is used, the pressing mark by the clip CP is formed in the mask frame 31 and the support body SP.

如图13(a)~(e)所示的例子那样,在蒸镀用金属掩模的制造方法的其他例子中,首先,在电解所使用的电极EP的表面即电极表面EPS上形成抗蚀剂层PR(参照图13(a))。接着,通过对抗蚀剂层PR进行曝光以及显影,由此在电极表面EPS上形成图案的一个例子即抗蚀掩模RM(参照图13(b))。抗蚀掩模RM为,在与电极表面EPS正交的截面中,具有顶部位于电极表面EPS的倒锥台状,并具有离电极表面EPS的距离越大则与电极表面EPS平行的截面的面积越大的形状。接下来,进行使用了具有抗蚀掩模RM的电极表面EPS的电解。由此,以向电极表面EPS中的抗蚀掩模RM以外的区域延展的方式,金属片32S形成为掩模部32(参照图12(c))。As in the example shown in Fig. 13 (a) to (e), in another example of the manufacturing method of the metal mask for vapor deposition, first, a resist is formed on the surface of the electrode EP used for electrolysis, that is, the electrode surface EPS. Agent layer PR (refer to FIG. 13( a )). Next, by exposing and developing the resist layer PR, a resist mask RM which is an example of a pattern is formed on the electrode surface EPS (see FIG. 13( b )). The resist mask RM has, in a cross section perpendicular to the electrode surface EPS, an inverted truncated cone shape whose top is located on the electrode surface EPS, and has an area of a cross section parallel to the electrode surface EPS as the distance from the electrode surface EPS increases. The larger the shape. Next, electrolysis using the electrode surface EPS with the resist mask RM is performed. Thereby, the metal piece 32S is formed as the mask part 32 so that it may spread to the area|region other than the resist mask RM in electrode surface EPS (refer FIG.12(c)).

此时,在抗蚀掩模RM所占有的空间以外堆积有金属片32S,因此在金属片32S上形成具有对抗蚀掩模RM的形状进行追随的形状的孔。然后,掩模部32的掩模孔32H自我匹配地形成。即,与电极表面EPS接触的面作为具有背面开口H1的掩模背面321起作用。此外,具有比背面开口H1大的开口即表面开口H2的最表面作为掩模表面322起作用。At this time, since the metal piece 32S is accumulated outside the space occupied by the resist mask RM, a hole having a shape following the shape of the resist mask RM is formed in the metal piece 32S. Then, the mask hole 32H of the mask portion 32 is formed in a self-aligning manner. That is, the surface in contact with the electrode surface EPS functions as the mask back surface 321 having the back opening H1. In addition, the outermost surface of the surface opening H2 , which is an opening larger than the back surface opening H1 , functions as a mask surface 322 .

接下来,仅抗蚀掩模RM被从电极表面EPS除去,由此,形成使从背面开口H1到表面开口H2成为中空的掩模孔32H(参照图13(d))。最后,在具有表面开口H2的掩模表面322的外周边缘部32E接合框架内侧边缘部31E的框架背面311,接着,对掩模框架31施加用于将掩模部32从电极表面EPS剥离的应力。或者,与支撑体等接合的掩模部32被从电极表面EPS剥离,并在掩模表面322的外周边缘部32E接合框架内侧边缘部31E的框架背面311。由此,制造出在掩模框架31接合了掩模部32的状态下的蒸镀用金属掩模30(参照图12(e))。Next, only the resist mask RM is removed from the electrode surface EPS to form a hollow mask hole 32H from the rear opening H1 to the front opening H2 (see FIG. 13( d )). Finally, the frame back surface 311 of the frame inner edge portion 31E is joined to the outer peripheral edge portion 32E of the mask surface 322 having the surface opening H2, and then stress for peeling the mask portion 32 from the electrode surface EPS is applied to the mask frame 31. . Alternatively, the mask portion 32 bonded to the support or the like is peeled off from the electrode surface EPS, and the outer peripheral edge portion 32E of the mask surface 322 is bonded to the frame back surface 311 of the frame inner edge portion 31E. Thereby, the metal mask 30 for vapor deposition in the state which joined the mask part 32 to the mask frame 31 is manufactured (refer FIG.12(e)).

如图14(a)~(f)所示的例子那样,在蒸镀用金属掩模的制造方法的其他例子中,首先,在电解所使用的电极表面EPS形成抗蚀剂层PR(参照图14(a))。接着,对抗蚀剂层PR进行曝光以及显影,由此在电极表面EPS上形成图案的一个例子即抗蚀掩模RM(参照图14(b))。抗蚀掩模RM为,在与电极表面EPS正交的截面中,具有底部位于电极表面EPS的锥台状,并具有离电极表面EPS的距离越大则与电极表面EPS平行的截面的面积越小的形状。接下来,进行使用了具有抗蚀掩模RM的电极表面EPS的电解,以向电极表面EPS中的抗蚀掩模RM以外的区域延展的方式,金属片32S形成为掩模部32(参照图14(c))。14 (a) ~ (f) as shown in the example, in another example of the method of manufacturing the metal mask for vapor deposition, first, on the electrode surface EPS used in electrolysis to form a resist layer PR (refer to FIG. 14(a)). Next, by exposing and developing the resist layer PR, a resist mask RM which is an example of a pattern is formed on the electrode surface EPS (see FIG. 14( b )). The resist mask RM has a frustum shape having a bottom located on the electrode surface EPS in a cross section perpendicular to the electrode surface EPS, and has a cross-sectional area parallel to the electrode surface EPS that becomes larger as the distance from the electrode surface EPS increases. small shape. Next, electrolysis using the electrode surface EPS having the resist mask RM is performed, and the metal piece 32S is formed as the mask portion 32 (see FIG. 14(c)).

在此也是,在抗蚀掩模RM所占有的空间以外堆积有金属片32S,因此在金属片32S上形成具有对抗蚀掩模RM的形状进行追随的形状的孔。然后,掩模部32的掩模孔32H自我匹配地形成。即,与电极表面EPS接触的面,作为具有表面开口H2的掩模表面322起作用,具有比表面开口H2小的开口即背面开口H1的最表面,作为掩模背面321起作用。Here also, since the metal piece 32S is deposited outside the space occupied by the resist mask RM, a hole having a shape following the shape of the resist mask RM is formed in the metal piece 32S. Then, the mask hole 32H of the mask portion 32 is formed in a self-aligning manner. That is, the surface in contact with the electrode surface EPS functions as the mask surface 322 having the surface opening H2, and the outermost surface having the back opening H1, which is an opening smaller than the surface opening H2, functions as the mask back surface 321.

接下来,仅将抗蚀掩模RM从电极表面EPS除去,由此,形成使从背面开口H1到表面开口H2成为中空的掩模孔32H(参照图14(d))。然后,在具有背面开口H1的掩模背面321上接合中间转印基材TM,接着,对中间转印基材TM施加用于将掩模部32从电极表面EPS剥离的应力。由此,在中间转印基材TM上接合了掩模部32的状态下,掩模表面322从电极表面EPS剥离(参照图14(e))。最后,在具有表面开口H2的掩模表面322的外周边缘部32E接合框架内侧边缘部31E的框架背面311,接着,将中间转印基材TM从掩模部32剥离。由此,制造出在掩模框架31上接合了掩模部32的状态下的蒸镀用金属掩模30(参照图14(f))。Next, only the resist mask RM is removed from the electrode surface EPS to form a hollow mask hole 32H from the rear opening H1 to the front opening H2 (see FIG. 14( d )). Then, the intermediate transfer base material TM is bonded to the mask back surface 321 having the back surface opening H1, and then stress for peeling the mask portion 32 from the electrode surface EPS is applied to the intermediate transfer base material TM. Thereby, the mask surface 322 peels from the electrode surface EPS in the state which bonded the mask part 32 to the intermediate transfer base material TM (refer FIG.14(e)). Finally, the frame back surface 311 of the frame inner edge portion 31E is joined to the outer peripheral edge portion 32E of the mask surface 322 having the surface opening H2 , and then the intermediate transfer substrate TM is peeled off from the mask portion 32 . Thereby, metal mask 30 for vapor deposition in the state which joined the mask part 32 to the mask frame 31 is manufactured (refer FIG.14(f)).

根据上述实施方式,能够得到以下列举的效果。According to the above-described embodiment, the effects listed below can be obtained.

(1)从表面开口H2向掩模孔32H内进入的蒸镀物质,通过大小比表面开口H2小的背面开口H1向蒸镀对象进行堆积。因此,能够提高由蒸镀物质构成的图案的构造上的精度。(1) The vapor deposition substance entering the mask hole 32H from the front opening H2 is deposited on the vapor deposition target through the rear opening H1 having a smaller size than the front opening H2 . Therefore, it is possible to improve the structural accuracy of the pattern made of the vapor-deposited substance.

(2)由于掩模表面322与掩模框架31被接合,因此能够使掩模背面321与蒸镀对象的接触变得容易,并且能够提高蒸镀用金属掩模30本身的刚性。(2) Since the mask surface 322 is bonded to the mask frame 31 , the mask back surface 321 can be easily brought into contact with the vapor deposition target, and the rigidity of the vapor deposition metal mask 30 itself can be increased.

(3)一个掩模框架31所需要的掩模孔32H的数量例如被分割给3个掩模部32。因此,即使在一个掩模部32的一部分产生变形的情况下,也能够减小与所变形的掩模部32进行更换的新的掩模部32的大小。(3) The number of mask holes 32H required for one mask frame 31 is divided into three mask sections 32 , for example. Therefore, even when a part of one mask portion 32 is deformed, the size of a new mask portion 32 to be replaced with the deformed mask portion 32 can be reduced.

(4)如果是从表面开口H2到背面开口H1为止掩模孔32H的截面积单调地减少的例子,则对于从表面开口H2进入的蒸镀粒子,能够更良好地抑制阴影效应。(4) In an example in which the cross-sectional area of the mask hole 32H decreases monotonously from the front opening H2 to the rear opening H1 , the shadow effect can be more favorably suppressed for the vapor deposition particles entering from the front opening H2 .

(5)通过电解来形成具有对抗蚀掩模RM的形状进行追随的形状的掩模孔32H,因此减轻了对金属片另外地进行用于形成掩模孔32H的蚀刻这种负荷。(5) Since the mask hole 32H having a shape following the shape of the resist mask RM is formed by electrolysis, the burden of etching the metal sheet separately for forming the mask hole 32H is reduced.

Claims (9)

1.一种蒸镀用金属掩模,其中,具备:1. A metal mask for vapor deposition, wherein: 掩模部,具备用于与蒸镀对象接触的接触面以及与上述接触面相反侧的非接触面,形成为片形状,而且,该掩模部具有分别从位于上述接触面的第一开口贯通到位于上述非接触面的第二开口的多个掩模孔,上述第一开口的大小小于上述第二开口的大小;以及The mask portion is provided with a contact surface for contacting with the vapor deposition object and a non-contact surface on the opposite side to the above-mentioned contact surface, and is formed in a sheet shape, and the mask portion has first openings that pass through the contact surface respectively. a plurality of mask holes to a second opening located on the non-contact surface, the size of the first opening being smaller than the size of the second opening; and 掩模框架,具有比上述掩模部高的刚性,并且形成为将上述多个掩模孔包围的框状,The mask frame has a higher rigidity than the mask portion and is formed in a frame shape surrounding the plurality of mask holes, 上述掩模部在上述非接触面中具有将上述多个掩模孔包围的部分,在上述部分通过接合部与上述掩模框架接合。The mask portion has a portion surrounding the plurality of mask holes on the non-contact surface, and the portion is joined to the mask frame by a joint portion. 2.如权利要求1所述的蒸镀用金属掩模,其中,2. The metal mask for vapor deposition according to claim 1, wherein: 具有与共用的一个上述掩模框架接合的多个上述掩模部。A plurality of the above-mentioned mask portions joined to the common one of the above-mentioned mask frames are provided. 3.如权利要求1或2所述的蒸镀用金属掩模,其中,3. The metal mask for vapor deposition according to claim 1 or 2, wherein: 上述掩模部为金属片,The mask portion is a metal sheet, 上述接触面以及上述非接触面中的至少一方包括平滑面,上述平滑面设为向该平滑面入射的光的镜面反射的反射率为45.2%以上,At least one of the contact surface and the non-contact surface includes a smooth surface, and the smooth surface has a reflectance of specular reflection of light incident on the smooth surface of 45.2% or more, 上述金属片的厚度为50μm以下。The metal sheet has a thickness of 50 μm or less. 4.如权利要求1或2所述的蒸镀用金属掩模,其中,4. The metal mask for vapor deposition according to claim 1 or 2, wherein: 上述掩模部为金属片,The mask portion is a metal sheet, 上述接触面以及上述非接触面中的至少一方包括平滑面,上述平滑面设为向该平滑面入射的光的镜面反射的反射率为53.0%以上,At least one of the contact surface and the non-contact surface includes a smooth surface, and the smooth surface has a reflectance of specular reflection of light incident on the smooth surface of 53.0% or more, 上述金属片的厚度为40μm以下。The metal sheet has a thickness of 40 μm or less. 5.如权利要求3所述的蒸镀用金属掩模,其中,5. The metal mask for vapor deposition according to claim 3, wherein: 上述掩模框架具备上述接合部所位于的平面,The mask frame has a plane on which the bonding portion is located, 上述平面具有朝向上述掩模部的外侧延展的大小。The flat surface has a size extending toward the outside of the mask portion. 6.一种蒸镀用金属掩模的制造方法,其中,包括:6. A method of manufacturing a metal mask for vapor deposition, comprising: 形成掩模部的工序,该掩模部具备用于与蒸镀对象接触的接触面以及与上述接触面相反侧的非接触面,形成为片形状,而且,该掩模部具有分别从位于上述接触面的第一开口贯通到位于上述非接触面的第二开口的多个掩模孔,上述第一开口的大小小于上述第二开口的大小;和A process of forming a mask portion having a contact surface for contacting with an evaporation target and a non-contact surface opposite to the contact surface, formed in a sheet shape, and having The first opening of the contact surface penetrates to a plurality of mask holes located at the second opening of the non-contact surface, and the size of the first opening is smaller than the size of the second opening; and 将上述掩模部与掩模框架接合的工序,该掩模框架具有比上述掩模部高的刚性,且形成为将上述多个掩模孔包围的框状,而且,上述掩模部在上述非接触面中具有将上述多个掩模孔包围的部分,该掩模部与掩模框架接合的工序中,上述掩模部在该部分通过接合部与上述掩模框架接合。A step of joining the mask portion to a mask frame, the mask frame having a higher rigidity than the mask portion and being formed in a frame shape surrounding the plurality of mask holes, and the mask portion is placed on the The non-contact surface has a portion surrounding the plurality of mask holes, and in the step of bonding the mask portion to the mask frame, the mask portion is bonded to the mask frame through a bonding portion at this portion. 7.如权利要求6所述的蒸镀用金属掩模的制造方法,其中,7. The method of manufacturing a metal mask for vapor deposition according to claim 6, wherein: 将上述掩模框架与上述非接触面接合的工序为,将多个上述掩模部与一个上述掩模框架接合。The step of bonding the mask frame to the non-contact surface is to bond the plurality of mask portions to one mask frame. 8.如权利要求6或7所述的蒸镀用金属掩模的制造方法,其中,8. The method of manufacturing a metal mask for vapor deposition according to claim 6 or 7, wherein: 上述掩模部为金属片,The mask portion is a metal sheet, 上述接触面以及上述非接触面中的至少一方包括平滑面,上述平滑面设为向该平滑面入射的光的镜面反射的反射率为45.2%以上,At least one of the contact surface and the non-contact surface includes a smooth surface, and the smooth surface has a reflectance of specular reflection of light incident on the smooth surface of 45.2% or more, 形成上述掩模部的工序中,将上述金属片的厚度设为50μm以下。In the step of forming the mask portion, the thickness of the metal sheet is set to be 50 μm or less. 9.如权利要求6或7所述的蒸镀用金属掩模的制造方法,其中,9. The method of manufacturing a metal mask for vapor deposition according to claim 6 or 7, wherein: 上述掩模部为金属片,The mask portion is a metal sheet, 上述接触面以及上述非接触面中的至少一方包括平滑面,上述平滑面设为向该平滑面入射的光的镜面反射的反射率为53.0%以上,At least one of the contact surface and the non-contact surface includes a smooth surface, and the smooth surface has a reflectance of specular reflection of light incident on the smooth surface of 53.0% or more, 形成上述掩模部的工序中,将上述金属片的厚度设为40μm以下。In the step of forming the mask portion, the thickness of the metal sheet is set to be 40 μm or less.
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