CN106323511A - One-chip type quartz resonance pressure/temperature sensor and technological method therefor - Google Patents
One-chip type quartz resonance pressure/temperature sensor and technological method therefor Download PDFInfo
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- CN106323511A CN106323511A CN201610638733.7A CN201610638733A CN106323511A CN 106323511 A CN106323511 A CN 106323511A CN 201610638733 A CN201610638733 A CN 201610638733A CN 106323511 A CN106323511 A CN 106323511A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 239000010453 quartz Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000005516 engineering process Methods 0.000 claims abstract description 17
- 239000005388 borosilicate glass Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 85
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 230000006835 compression Effects 0.000 claims description 14
- 238000007906 compression Methods 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 13
- 229910052681 coesite Inorganic materials 0.000 claims description 10
- 229910052906 cristobalite Inorganic materials 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 229910052682 stishovite Inorganic materials 0.000 claims description 10
- 229910052905 tridymite Inorganic materials 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 238000013016 damping Methods 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 238000001534 heteroepitaxy Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 4
- 230000008602 contraction Effects 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 32
- 230000035882 stress Effects 0.000 abstract description 21
- 239000000463 material Substances 0.000 abstract description 15
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 230000003139 buffering effect Effects 0.000 abstract 1
- 229910000833 kovar Inorganic materials 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 14
- 230000000694 effects Effects 0.000 description 9
- 229920001971 elastomer Polymers 0.000 description 9
- 239000000806 elastomer Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 7
- 230000001629 suppression Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 5
- 238000009530 blood pressure measurement Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000903946 Clematidis Species 0.000 description 1
- 241000935974 Paralichthys dentatus Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- YGANSGVIUGARFR-UHFFFAOYSA-N dipotassium dioxosilane oxo(oxoalumanyloxy)alumane oxygen(2-) Chemical compound [O--].[K+].[K+].O=[Si]=O.O=[Al]O[Al]=O YGANSGVIUGARFR-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052627 muscovite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
- G01L1/162—Measuring force or stress, in general using properties of piezoelectric devices using piezoelectric resonators
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/32—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using change of resonant frequency of a crystal
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
A one-chip type quartz resonance pressure/temperature sensor and a technological method for a one-chip force sensor are disclosed, and the invention relates to a pressure/temperature sensor. A problem that a conventional resonant type quartz crystal pressure/temperature sensor is large in size, high in technological difficulty, low in precision and poor in stability can be solved. According to the one-chip type quartz resonance pressure/temperature sensor and the technological method for the one-chip force sensor, a cut model of a high stability force sensitive-thermosensitive quartz crystal, a structure of a high quality factor one-chip type force sensitive-thermosensitive resonator, a pressure/compressing force conversion structure, and a quartz low stress seal structure and technology are adopted; the low stress seal structure and technology are adopted; excellent elasticity of the quartz crystal, an SiC layer, monocrystalline silicon, borosilicate glass and Kovar alloy can be used while semiconductor technologies are employed. Although silicon and quartz materials are not equal in thermal expansion coefficient, buffering effects of the amorphous state SiC layer are used, and thermal stress of the quartz pressure/temperature sensor can be greatly lowered. The one-chip type quartz resonance pressure/temperature sensor is suitable for serving as the pressure/temperature sensor and the technological method for the one-chip force sensor can be applied to the pressure/temperature sensor.
Description
Technical field
The invention belongs to the piezoelectric resonant sensors field of automatic technology, be specifically related to a kind of one chip quartz resonance pressure
Power/temperature sensor and and process.
Background technology
Quartz resonance pressure sensor (being abbreviated as QPS) is a kind of high-accuracy, sensor of high stable, and it has excellence
Metering factor high accuracy, ultrahigh resolution, excellent long-time stability.The mode of operation of QPS mainly has 3 kinds at present: sound body
Wave mode (BAW), surface acoustic wave pattern (SAW) and broad sense surface acoustic wave pattern or broad sense acoustic bulk wave pattern, such as surface are horizontal
Ripple (the most shallow acoustic bulk wave or plunder face bulk wave) pattern.Wherein, range is the widest, precision is the highest, long-time stability are it is still further preferred that execute
Adding the QPS of the full quartz construction of thickness shear vibration of radial compression force, the accuracy of current top level QPS has reached pressure
The limit of measurement index, accuracy is up to 0.008%F.S, and pressure measurement range is 0.1～276Mpa or 0.1～1.38Mpa,
Resolution is 1 × 10-6, but it exists following shortcoming:
1) in order to make the quick resonator of Quartz Force, lead power elastomer, pressure force transducer three in elasticity system
Number, temperature coefficient match, use full quartz construction, i.e. three all to utilize same crystal to make, in order to eliminate non-resilient mistake
Difference, thermal expansion non-match error.The Quartztronics public affairs of Hewlett-Packard (HP) company of France, the U.S. at present
The QPS that department, Quartzdyne company, Schlumberger company, Paroscientific company etc. produce is the most integrated entirely
Quartz crystal structure, main suitable high temperature, high pressure, high-accuracy measurement use.Because quartz crystal is anisotropic, so power
Quick quartz-crystal resonator, pressure force transducer (diaphragm), the power elastomer of leading must be by same cut type, the quartz of same orientation
Crystal is constituted.Reach the pilot cylinder of optical grade standard additionally, must process in one piece of quartz crystal and be positioned at its cylinder
The high-accuracy quick resonator of lens type power in portion, makes in the quick resonator surface of lens type power of higher depth without parasitic in pilot cylinder
The metal exciting electrode of pattern, make surface electrode in quartz pilot cylinder medial wall, and be that ohm connects with external circuit bonding point
Touching, its technology difficulty is the biggest.This structure is reformed by engineering college of Yichun College of China, reduces technology difficulty, but
It is but to sacrifice sensor accuracy and temperature stability and long-time stability as cost.
2), the volume of this QPS relatively big, more than generally big than diffusion silicon pressure sensor several times, price is high, using method
Complexity, has the most greatly fettered its application.
3), the quick resonator of its Quartz Force and heat sensitive resonance instrument be all separate structure, non-one chip, therefore dut temperature value and
Force value is not the numerical value of same position, synchronization, the most no matter carries out the temperature-compensating of pressure transducer, or accurately
Measuring the temperature and pressure value of measured body, all there is bigger room for promotion in its accuracy of measurement.
Another kind is beam mode QPS, its main suitable absolute pressure, low pressure, the work of narrow warm area, the most Muscovite
PKMA-1000.0 type QPS uses the double tuning fork resonator sensitive pressure of beam mode closed end, utilizes the sound of twisting vibration pattern
Fork sensitive temperature.Zhong electricity group 49 has also carried out this pattern closed end double-tone fork resonator type Study on pressure sensor.Such pressure
The shortcoming of force transducer is:
1), pressure guiding device, pressure force transducer are bellows or glass steps on pipe.The quick resonator of its power is not the most sensitive quilt
Measuring pressure, but step on pipe by third party's bellows or glass, not only increase response time, and reduce tonometric standard
Exactness, stability.
2), the resolution of beam mode QPS, temperature stability are much smaller than thickness-shear vibration mode formula QPS.For reality
Now using photoetching and the chemical etching of the closed end double-tone fork quick resonator of power of beam mode, current countries in the world all use
Frequently temperature characteristics is parabolical Z cut type or Z+2 cut type quartz crystal, and its frequency temperature characteristics is conic section, can not show a candle to cubic curve
AT cut type, it is clear that the former pressure resolution, temperature stability, long-time stability are inferior more than the latter.
3), closed end double-tone is pitched the quick resonator of power and leads power elastomer, the unstressed sealing-in of pressure force transducer (diaphragm)
Technology is the maximum bottleneck technique affecting QPS accuracy, long-time stability and temperature stability.There is presently no to find and cut with Z
The seal, sealing materials that type or the Z+2 cut type double-tone fork quick resonator of power mate completely.
Additionally, the quartz resonance pressure/temperature sensor of countries in the world is nearly all non-one-piece construction at present.Change speech
It, be almost all biplate or multiple-piece construction, the most a piece of or several for sensitive pressure characteristic, the most a piece of or several with
In sensitive temperature characteristic.
Summary of the invention
The present invention be in order to solve that existing resonance type quartz crystal crystal pressure/temperature sensor volume is big, technology difficulty is high,
The problem that temperature stability and time stability promote further, is thus provided that a kind of one chip quartz resonance Pressure/Temperature
Sensor and and process..
One chip quartz resonance pressure/temperature sensor of the present invention, it includes pressure compression stress changer, biography
Sensor housing 1, one chip heat sensitive resonance instrument 3, one chip force-sensing sensor 4, reference pressure post 8, pressure interface 9 and base 11；
Pressure compression stress changer includes two pressure conduction posts 5 and pilot flexible sheet 2；
The lower end of two pressure conduction posts 5 is each attached to the upper surface of pilot flexible sheet 2, and with pilot flexible sheet 2
It is integrally formed part；
Reference pressure post 8 has the hollow tubular structure of ladder breach for top, and the bottom of reference pressure post 8 is that pressure connects
Mouth 9；
The top of reference pressure post 8 is fixed on pilot flexible sheet 2 lower surface, and is positioned at the center of pilot flexible sheet 2；
The sidewall of reference pressure post 8 has four manholes 6, and described four manholes 6 are by along the center line of reference pressure post 8
The heart is symmetrical, and four manholes 6 close on the top of reference pressure post 8；The bottom of reference pressure post 8 passes base 11 center；
Pilot flexible sheet 2 be located in airtight connection structure between the upside of base 11, and pilot flexible sheet 2 and base 11
Become Pressure chamber；Sensor housing 1 be located in the upside of base 11, pilot flexible sheet 2 be positioned at sensor housing 1 and base 11 it
Between；Two pressure conduction posts 5, one chip force-sensing sensor 4 and one chip heat sensitive resonance instrument 3 be respectively positioned on pilot flexible sheet 2 with
Between sensor housing 1；
Two pressure conduction posts 5 are positioned at the both sides that reference pressure post 8 extended line is relative；And reference pressure post 8 extended line with
Distance between two pressure conduction posts 5 is equal；
Every pressure conduction post 5 is top and has the cylinder of half crop breach；The two ends of one chip force-sensing sensor 4
It is separately fixed in half crop breach of two pressure conduction posts 5；One chip heat sensitive resonance instrument 3 is fixed on the quick sensing of one chip power
On device 4；
When fluid pressure enters Pressure chamber and pressure higher than an atmospheric pressure by the pressure interface 9 of reference pressure post 8
Time, pilot flexible sheet 2 produces upper convex deformation, owing to the fixed traction between reference pressure post 8 and pilot flexible sheet 2 is made
With, two pressure conduction posts 5 all produce inside contraction deformation, the quick sensing of one chip power between two pressure conduction posts 5
Device 4 applies the power of horizontal direction and increases, and the pressure of Pressure chamber is the highest, and the power being applied to horizontal direction is the biggest；
When fluid pressure enters Pressure chamber and pressure less than an atmospheric pressure by the pressure interface 9 of reference pressure post 8
Time, the deformation projection of pilot flexible sheet 2 diminishes, and two pressure conduction posts 5 recover to vertical direction, to two pressure conduction posts
The power of the horizontal direction that the one chip force-sensing sensor 4 between 5 applies diminishes, and the pressure of Pressure chamber is the lowest, applies feedwater
Square to power the least；
The process of one chip force-sensing sensor, the tool of the method in one chip quartz resonance pressure/temperature sensor
Body step is:
Step one, utilize photoetching and anisotropic etching legal system to make 2 plate shapes to be similar to semicircular monocrystal silicon structure part；
Step 2, to utilize semiconductor technology to make monocrystal silicon structure part upper surface and side be covered with thickness be non-about 80 μm
Crystalline state SiC layer；
Step 3, utilize heteroepitaxy in amorphous state SiC layer cladding thickness less than the SiO2 layer of 10 μm；
Step 4, oxygen plasma surface activation method is utilized to make to be covered with the monocrystal silicon structure part of SiO2 layer under normal temperature condition
Resonator quick with power bonding being integrally formed power sensing structure part；
Step 5, employing electrostatic sealing-in method are at the equal sealing-in in integrated force sensing structure part two ends semicircle borosilicate glass
Sheet, then make borosilicate glass sheet be sintered together with pressure conduction post with cryogenic glass powder, formed rigidly connected unstressed
Sealing-in body.
The quick resonator of power of the present invention be placed in 2 pressure conduction posts relative step breach between, and utilize unstressed
Process for sealing is bonded, and constitutes freely supported structure quartz crystal composite beam.The upper end of reference pressure post be fixed on 2 pressure conduction posts it
Between connector on, play traction this connector effect.And the lower end of reference pressure post is fastened on base, prevent connector
Mobile.There are near the upper end of this reference pressure post 4 through holes, in order to allowing can be in feed pressure storehouse by measuring pressure medium.
When pressure acts on pilot flexible sheet, then diaphragm produces upper convex deformation, and the traction by reference pressure post simultaneously coordinates,
Cause 2 pressure conduction posts to produce inside contraction deformation respectively, thus be applied to MFTSR's being become compression stress by measuring pressure
The quick resonator of power, the X-axis (electric axis) of its compression stress direction resonator quick with power is parallel.Because AT cut type in elastic limits
The resonant frequency of the quick resonator of power becomes strict linear functional relation, and the quick quartz resonator of power with the power acted in X-axis
Compression resistant force intensity be tensile strength, 24 times of flexural strength, so this QP not only pressure measurement accuracy is high, anti-overload ability
By force, and improve its dynamic range, shorten signal processing time.
Accompanying drawing explanation
Fig. 1 is the structural representation of one chip quartz resonance pressure/temperature sensor of the present invention；
Fig. 2 is the signal of the one chip force-sensing sensor described in detailed description of the invention four and heat sensitive resonance instrument integral structure
Figure.
Detailed description of the invention
Detailed description of the invention one, combine Fig. 1 present embodiment is described, one chip quartz resonance pressure described in present embodiment
Power/temperature sensor, it includes pressure compression stress changer, sensor housing 1, one chip heat sensitive resonance instrument 3, one chip power
Dependent sensor 4, reference pressure post 8, pressure interface 9 and base 11；
Pressure compression stress changer includes two pressure conduction posts 5 and pilot flexible sheet 2；
The lower end of two pressure conduction posts 5 is each attached to the upper surface of pilot flexible sheet 2, and with pilot flexible sheet 2
It is integrally formed part；
Reference pressure post 8 has the hollow tubular structure of ladder breach for top, and the bottom of reference pressure post 8 is that pressure connects
Mouth 9；
The top of reference pressure post 8 is fixed on pilot flexible sheet 2 lower surface, and is positioned at the center of pilot flexible sheet 2；
The sidewall of reference pressure post 8 has four manholes 6, and described four manholes 6 are by along the center line of reference pressure post 8
The heart is symmetrical, and four manholes 6 close on the top of reference pressure post 8；The bottom of reference pressure post 8 passes base 11 center；
Pilot flexible sheet 2 be located in airtight connection structure between the upside of base 11, and pilot flexible sheet 2 and base 11
Become Pressure chamber；Sensor housing 1 be located in the upside of base 11, pilot flexible sheet 2 be positioned at sensor housing 1 and base 11 it
Between；Two pressure conduction posts 5, one chip force-sensing sensor 4 and one chip heat sensitive resonance instrument 3 be respectively positioned on pilot flexible sheet 2 with
Between sensor housing 1；
Two pressure conduction posts 5 are positioned at the both sides that reference pressure post 8 extended line is relative；And reference pressure post 8 extended line with
Distance between two pressure conduction posts 5 is equal；
Every pressure conduction post 5 is top and has the cylinder of half crop breach；The two ends of one chip force-sensing sensor 4
It is separately fixed in half crop breach of two pressure conduction posts 5；One chip heat sensitive resonance instrument 3 is fixed on the quick sensing of one chip power
On device 4；
When fluid pressure enters Pressure chamber and pressure higher than an atmospheric pressure by the pressure interface 9 of reference pressure post 8
Time, pilot flexible sheet 2 produces upper convex deformation, owing to the fixed traction between reference pressure post 8 and pilot flexible sheet 2 is made
With, two pressure conduction posts 5 all produce inside contraction deformation, the quick sensing of one chip power between two pressure conduction posts 5
Device 4 applies the power of horizontal direction and increases, and the pressure of Pressure chamber is the highest, and the power being applied to horizontal direction is the biggest；
When fluid pressure enters Pressure chamber and pressure less than an atmospheric pressure by the pressure interface 9 of reference pressure post 8
Time, the deformation projection of pilot flexible sheet 2 diminishes, and two pressure conduction posts 5 recover to vertical direction, to two pressure conduction posts
The power of the horizontal direction that the one chip force-sensing sensor 4 between 5 applies diminishes, and the pressure of Pressure chamber is the lowest, applies feedwater
Square to power the least；
Present embodiment solves " in high precision, low cost, the width of current resonance type quartz crystal crystal pressure and temperature sensor
Range, wide warm area, miniaturization and slimming are difficult to take into account " contradiction.Belong to fluid pressure, field of temperature measurement.
Its power is quick and heat sensitive resonance instrument uses thickness shear C vibration mode.And the long limit of the latter axially becomes 60 ° with crystal X-axis
Angle.This force-sensing sensor and heat sensitive resonance instrument all use same cut type (AT cut type), and all work in same elastic vibrating
Dynamic model formula (thickness shear C vibration mode).I.e. " three same ": same bauerite crystal, same cut type, same elastic vibrating
Dynamic model formula.Its key technology be one chip heat sensitive resonance instrument 3 be by integrated A T cut type heat sensitive resonance instrument constitute, it is quick with power
The position of resonator is as follows:
Its long limit axially becomes 60 ° of angles with quartz crystal X-axis, be in temperature sensitive and for the insensitive orientation of pressure.
Additionally, in place of the wafer of one chip heat sensitive resonance instrument 3, one chip force-sensing sensor 4 is connected, utilize etching technics to machined one
A little through holes of ￠ 1mm that are about are as stress damping hole, in order to change the acoustic impedance of two resonator junctions, reduce vibration mode it
Between acoustical coupling, promote suppression to parasitic modes of vibration, it is thus achieved that high q-factor and high stability.
Humorous when pressure is equal to zero of the standard resonant frequency of one chip heat sensitive resonance instrument 3 and one chip force-sensing sensor 4
Vibration frequency is close, but unequal, and generally both resonant frequency differences should be less than equal to 0.4kc.Heat sensitive resonance instrument length direction is taken as
Deflecting the direction of 60 ° with the X-axis of quartz, length dimension is l, and width to be Z axial, its width dimensions is w.Therefore, although hot
Quick resonator has born pressure, but its frequency-pressure change rate is but equal to zero.Its low stress sealing structure and technique
Make use of the superior elasticity of quartz crystal, SiC layer, monocrystal silicon, borosilicate glass and Covar, conjunction with semiconductors technique is real
Existing.Although silicon and the thermal coefficient of expansion of quartz material, due to the ingenious cushioning effect utilizing amorphous state SiC layer, significantly
Decrease the thermal stress of quartz pressure/temperature sensor.
The length direction setting AT cut type thickness-shear vibration mode Shi Limin resonator described in present embodiment as X-axis,
When the pressure born under reference temperature T0 environment is zero, if give this resonator additional normal voltage V0, then its oscillation criteria
Output frequency, the frequency changed along with the frequency variation by measuring pressure size variation and the temperature along with tested pressure medium
Variable quantity is respectively f01, fp1 and FT1, is therefore T in temperature, the output frequency of power quick resonator when pressure size is P
Formula (1) can be used to represent for f1:
F1=f01 fp1 FT1 (1)
Additionally set the standard frequency of heat sensitive resonance instrument, along with the frequency variation changed by measuring pressure and along with by pressure measurement
The frequency variation that power media temperature changes is respectively f02, fp2 and FT2, due to fp2=0, is therefore T in temperature,
When pressure size is P, the output frequency of the quick resonator of power is that f2 can use formula (2) to represent:
F2=f02 FT2 (2)
If wushu (1) and formula (2) are subtracted each other, then
F1-f2=f01 fp1 FT1-(f02 FT2 (3)
Owing to the quick resonator of power and heat sensitive resonance instrument are one chip integral structures, and it is placed in same housing, because of
This is it can be seen that FT1 ≈ FT2, it is clear that
F1-f2=f01 fp1-f02 (4)
In formula (4), f01 and f02 is known, if being individually subtracted (f01-f02), after arrangement from the both sides of formula (4)
Can obtain frequency difference:
δ f=f1-f2-(f01-f02)=fp1 (5)
If designed power quick resonant frequency f01 and heat sensitive resonance instrument frequency f02 are equal, then formula (5) becomes
δ f=f1-f2=fp1 (6)
And power quick rate of change (slope) the S f of its power-frequency characteristic can represent with following formula:
S f=Kf.f2/ (D.n) (7)
In formula, Kf is frequency constant, and f is power quick resonator works frequency, and D is the size of power quick resonator holding capacity, and n is
Overtone number of times.Obviously, the QPS of the quick resonator of AT cut type integral structure one chip power and heat sensitive resonance instrument (MFTSR) can be
The frequency of the quick resonator of power becomes only along with being changed by measuring pressure along with the binary function characteristic of tested pressure, temperature variation
Function of a single variable characteristic, in other words, just can obtain by the size of measuring pressure according to the changing value of the output frequency of the quick resonator of power.
Detailed description of the invention two, present embodiment be to the one chip quartz resonance pressure described in detailed description of the invention one/
Further illustrating of temperature sensor, it also includes that sealing ring 10, described sealing ring 10 are set in the cylinder of reference pressure post 8
On, and on reference pressure post 8 between four manholes 6 and base 11.
Detailed description of the invention three, present embodiment be to the one chip quartz resonance pressure described in detailed description of the invention one/
Further illustrating of temperature sensor, the bottom of reference pressure post 8 is provided with external screw thread, reference pressure post 8 bottom and sealing nut
Threaded.
Detailed description of the invention four, combine Fig. 2 and illustrate that present embodiment, present embodiment are to described in detailed description of the invention one
The further illustrating of one chip quartz resonance pressure/temperature sensor, one chip heat sensitive resonance instrument 3 and the quick sensing of one chip power
Angle between device 4 is θ, and one chip force-sensing sensor 4 is integrated with one chip heat sensitive resonance instrument 3, and one chip power is quick
Stress damping hole 13 it is provided with between sensor 4 and one chip heat sensitive resonance instrument 3.
The quick resonator of power described in present embodiment and heat sensitive resonance instrument are all the monolithic quartz of thickness shear C vibration mode
Resonator, at normal temperatures, when temperature is identical, the resonant frequency of its heat sensitive resonance instrument and the quick resonator of power are when pressure is equal to zero
Resonant frequency difference 0.4kc.
The one chip force-sensing sensor of present embodiment uses AT cut type thickness-shear vibration mode formula resonator, and AT cut type is thick
Degree shear-vibration mode resonator is the quick resonator of the power with low resonance loss of a kind of classics.AT cut type sensitivity is humorous in theory
Device pressure-sensitivity of shaking and the thickness of resonator wafer square inversely proportional.When resonator wafer ratio is time relatively thin, the thickness of wafer
Spending the least, its pressure-sensitivity is the highest.But, its sensitivity is also made form by the technique of dissimilar metals material electrodes
And the impact of friction between the medium being in contact with it, viscous effect etc., cause the decline of sensitivity.Therefore there is one
Good value problem.Additionally, wafer is the thinnest, its mechanical strength also ratio is relatively low.The support member of wafer and the medium of contact all will cause
The reduction of its Q-value.According to G.Sauerbrey viewpoint, it is proposed that high q-factor fundamental frequency AT cut type MFTSR of new structure.
The quick resonator of fundamental frequency power in high q-factor MFTSR and heat sensitive resonance instrument are basis and the keys of QPS.Both are all thickness
The AT cut type of degree shear C vibration mode.Understand according to formula (7), square being directly proportional of the quick slope of its power and operating frequency, and with general
Sound number of times is inversely proportional to, and therefore improves power sensitivity sensitivity and should improve operating frequency and reduce stress size.Additionally since AT cut type stone
Elastic constant in the X-axis of English and Z axle, causes acoustic bulk wave different with the transmission on Z axle in X-axis, so it shakes
The cross-sectional distribution figure ovalisation of dynamic displacement.This will cause trap effect reducing, the minimizing of resonator q, and contour vibration is parasitic
The increase of mode intensity.In order to improve the Q-value of resonator, prevent edge pattern conversion and suppression contour vibration parasitic mode
The standing wave that formula is formed, in addition to selecting optimal limit ratio (length L/ width W) value, has also carried out body modification to quartz wafer:
First with wet etching technique, MFTSR is carried out roughing so that it is power quick resonator length direction is the X axis of quartz, long
Spending a size of L, its width is that Z is axial, and width dimensions is W.
Detailed description of the invention five, present embodiment be to the one chip quartz resonance pressure described in detailed description of the invention four/
Further illustrating of temperature sensor, θ is in the range of 45 °～75 °.
Detailed description of the invention six, present embodiment be to the one chip quartz resonance pressure described in detailed description of the invention four/
Further illustrating of temperature sensor, one chip force-sensing sensor 4 includes the quick part of pressure conduction post, power and the quick resonator of power 12,
The quick resonator of power 12 is fixed on the side of pressure conduction post main body, and the quick part of power is arranged on the two ends of pressure conduction post, and the quick part of power
It is integrally formed part with pressure conduction post.
It is also provided with, in MFTSR, the integrated A T cut type temperature-sensitive resonance that resonator key characteristic parameter quick with power is identical
Device.Its long limit axially becomes 60 ° of angles with quartz crystal X-axis, and its standard resonant frequency is equal to zero with the quick resonator of power at pressure
Time resonant frequency close, but unequal.Therefore, although heat sensitive resonance instrument has born pressure, but its frequency-pressure becomes
Rate is but equal to zero.Heat sensitive resonance instrument length direction is taken as the X-axis with quartz and deflects the direction of 45 ° 75 °, optimum deflection side
To for 60 °, length dimension is l, and width to be Z axial, its width dimensions is w.Then ion etching method pair can be recycled
In MFTSR, edge is the most steep or carried out body modification in place of deficient etching, is processed into standard oval, and transverse direction is X
Axially, and wafer edge surface is processed into stepped.
As shown in Figure 2.By making an effort in the structure of the excitation of the quick resonator of power and reception electrode size and film, enter one
Step strengthening energy trap effect, strengthens bending vibration, the suppression of stretching vibration spurious mode.The quick resonator electrode of power a size of 4.0
× 2.5mm, and the electrode size of heat sensitive resonance instrument is 2.39 × 1.25mm, electrode film is 4 Rotating fields, be followed successively by Cr layer, Au layer,
Cr layer and Au layer.Thus its resonance internal resistance can reduce about 100 Ω than conventional design, and reduce due to exciting current mistake
The big non-linear phenomena produced.Additionally, in place of the wafer of the heat sensitive resonance instrument resonator quick with power of MFTSR is connected, utilizes and carve
Etching technique machined some through holes being about ￠ 1mm as stress damping hole, in order to changes the acoustic impedance of two resonator junctions,
Reduce the acoustical coupling between vibration mode, promote the suppression to parasitic modes of vibration, it is thus achieved that high q-factor and high stability.
Detailed description of the invention seven, present embodiment be to the one chip quartz resonance pressure described in detailed description of the invention six/
Further illustrating of temperature sensor, the resonant frequency of the quick resonator of power 12 is 15.592MHz, measures the resonance of the quick resonator of power
Internal resistance is 25 Ω.
Detailed description of the invention eight, present embodiment be to the one chip quartz resonance pressure described in detailed description of the invention four/
Further illustrating of temperature sensor, one chip heat sensitive resonance instrument 3 uses integrated A T cut type heat sensitive resonance instrument to realize, integration
The long limit of AT cut type heat sensitive resonance instrument is axial and angle between the quick resonator of power is 60 ° of angles, one chip heat sensitive resonance instrument 3, monolithic
Formula force-sensing sensor 4 connected position, is etched with the through hole of multiple a diameter of 1mm as stress damping hole；One chip temperature-sensitive resonance
The standard resonant frequency of device 3 is poor with the one chip force-sensing sensor 4 resonant frequency when pressure is equal to zero to be less than or equal to
0.4kc。
One chip heat sensitive resonance instrument described in present embodiment be by integrated A T cut type heat sensitive resonance instrument constitute, it with
The position of the quick resonator of power is as follows: its long limit axially resonator quartz crystal X-axis quick with power becomes 60 ° of angles, is in temperature sensitive
And for the insensitive orientation of pressure；Additionally, the wafer at one chip heat sensitive resonance instrument, one chip force-sensing sensor is connected it
Place, utilizes etching technics to machined some through holes being about ￠ 1mm as stress damping hole；
The standard resonant frequency of one chip heat sensitive resonance instrument and the one chip force-sensing sensor resonance when pressure is equal to zero
Frequency is close, but unequal, and generally both resonant frequency differences should be less than equal to 0.4kc.Heat sensitive resonance instrument length direction be taken as with
The X-direction of quartz deflects the direction of 60 °, and length dimension is l, and width to be Z axial, its width dimensions is w.
Detailed description of the invention nine, present embodiment are the one chip quartz resonance pressure/temperature described in detailed description of the invention one
The process of the one chip force-sensing sensor of degree sensor, concretely comprising the following steps of the method:
Step one, utilize photoetching and anisotropic etching legal system to make 2 plate shapes to be similar to semicircular monocrystal silicon structure part；
Step 2, to utilize semiconductor technology to make monocrystal silicon structure part upper surface and side be covered with thickness be non-about 80 μm
Crystalline state SiC layer；
Step 3, utilize heteroepitaxy in amorphous state SiC layer cladding thickness less than the SiO2 layer of 10 μm；
Step 4, oxygen plasma surface activation method is utilized to make to be covered with the monocrystal silicon structure part of SiO2 layer under normal temperature condition
Resonator quick with power bonding being integrally formed power sensing structure part；
Step 5, employing electrostatic sealing-in method are at the equal sealing-in in integrated force sensing structure part two ends semicircle borosilicate glass
Sheet, then make borosilicate glass sheet be sintered together with pressure conduction post with cryogenic glass powder, formed rigidly connected unstressed
Sealing-in body.
The quick resonator of the power that it is critical only that of high accuracy QPS of the present invention and pilot elastomer, pressure force transformation
The unstressed sealing-in of device.Because pilot elastomer also brings adverse consequences while pilot: 1) due to the elasticity of unlike material
Constant is unequal, therefore will cause the relative displacement between the quick resonator of power and pilot elastomer, particularly quartz after stress
The elastic constant of crystal has anisotropy, is difficult to mate with conventional elastomers.Additionally, acoustic bulk wave is at the AT quick resonator of cut type power
X-axis and Z axially on transmission, the cross section of vibration displacement distribution be ellipse, and the most unfavorable sealing-in will subtract
Few Q-value, reduces its resolution and stability.
Between the quick resonator of power and pilot elastomer or pressure force transducer be not suitable for sealing-in also can bring creep,
Sluggishness, affects its response characteristic.
The thermal stress produced due to the difference of the thermal coefficient of expansion of unlike material, and current any adhesive (includes various
Including cryogenic glass powder) be nearly all isotropic material, at all can not with there is the quick resonator of anisotropic Quartz Force
Joining, therefore conventional process for sealing all will bring thermal stress, cause the accuracy of QPS, sensitivity significantly to reduce.
Pressure is delivered to the quick resonator of power again by pilot elastomer, pressure force transducer, it is clear that the delayed effect of power
Should, affect its response characteristic, particularly its dynamic characteristic.
New construction QPS is only made up of bi-material, accordingly, it would be desirable to carry out unstressed sealing-in be only pressure conduction post with
In place of the quick resonator of power of MFTSR engages.First select thermal coefficient of expansion close to the single crystal silicon material of quartz crystal, recycling
Following technique being made into one structural member.Its technique is as follows: utilizes photoetching and anisotropic etching legal system to make 2 and is similar to semicircle
The monocrystal silicon structure part of shape, then utilizing semiconductor technology to make its upper surface and side form thickness is the amorphous state about 80 μm
SiC layer, utilizes the heteroepitaxy growth thickness on the sic layer SiO2 layer less than 10 μm, recycles oxygen plasma surface activity
Change method makes the quick resonator of itself and power be bonded being integrally formed power sensing structure part under normal temperature condition.Electrostatic sealing-in method is finally used to exist
Integrated force sensing structure part two ends sealing-in upper half circle borosilicate glass sheet, then make they and Covar with cryogenic glass powder
Pressure conduction post be sintered together, form rigidly connected unstressed sealing-in body.
The purpose making SiC layer is to grow the SiO2 epitaxially deposited layer that a layer lattice constant difference is big on the monosilicon, with
Just the semicircular end lower surface of resonator quick with power realizes unstressed sealing-in.The excellent spring of this amorphous state silicon carbide layer, and
The effect of cushion can be played.Therefore when variation of ambient temperature, although silicon and the thermal coefficient of expansion of quartz material, can
Being the Absorption due to this cushion, its thermal stress is the least, and the harmful effect to QPS can be ignored.Additionally, because amorphous
State silicon carbide layer and monocrystal silicon, quartz crystal materials, borosilicate glass, the combination of Covar are the face knots of a kind of rigidity
Close, so the bond strength between them is big, fully meet the QPS requirement of precision, high stable.
Utilize ANSYS Finite Element Model (FEM) software to the QPS housing of the design, pilot flexible sheet, pressure conduction
The Digital Simulation that post, reference pressure post equal pressure-force transformation parts are strained.Feng. meter Sai Si of the result of digital simulation
Elastic strain (von Mises elastic strain).
The most at ambient temperature, HP4149A type Network Analyzer is utilized to record: the resonant frequency of the quick resonator of power is
15.592MHz, the resonance internal resistance of the quick resonator of measurement power is about 25 Ω.The resonant frequency of heat sensitive resonance instrument is 15.694MHz,
The resonance internal resistance of heat sensitive resonance instrument is about 36 Ω, and its Q is up to 15,000～16,000.They are all quick than the power of conventional design
Resonator, heat sensitive resonance instrument resonance internal resistance much smaller.Additionally, the accurate of resonator is surveyed with HP4149A type Network Analyzer
Amount shows, power is quick, the frequency spectrum of heat sensitive resonance instrument and spurious signal control degree highly desirable: at normalized frequency (0.99～1.01 models
In enclosing) degree of suppression of its parasitic signal is up to 30～35db.Obviously it is the high-resolution of QPS and high stable is laid a good foundation.
This is the excitation owing to resonator is used, receives the distribution in crystalline axis direction of the electrode pattern adaptation thickness shear vibration amplitude
Figure, and mate with the modification body of its resonator surface, thus cause the quick resonator of power, heat sensitive resonance instrument Q-value, parasitic signal
The significantly lifting of degree of suppression.
Finally reassemble suitable peripheral circuit, digital display meter and temperature compensation, software mended by line, utilizes First class standard piston pressure
Power meter, Grade I standard Platinum resistance thermometer, U.S.'s fluke thermostatic water bath etc. have carried out static demarcating and have stablized typical sample
Property inspection, its typical technology index such as table 1:
Table 1 MFTSR pressure-temperature sensor the key technical indexes table
The present invention solve quartz crystal sensor industry long-standing " in high precision, wide-range, wide warm area, low cost,
Miniaturization and slimming are difficult to the contradiction taken into account, and tentatively solve some difficult problem.But due to by time, human and material resources
Limiting, theory study also seems pale, tests the most relatively rough, and technique is groped the most insufficient, and deep work needs with laggard
OK.
The beneficial effect that the present invention obtains:
The core component of the quartz resonance pressure/temperature sensor of the present invention is by being produced on same bauerite sheet
1), it is made up of force-sensing sensor and heat sensitive resonance instrument.Its distinctive feature is this force-sensing sensor and heat sensitive resonance instrument
All use same cut type (AT cut type), and all work in same elastic vibration pattern (thickness shear C vibration mode).From
And achieve " three same ": same bauerite crystal, same cut type, same elastic vibration pattern.Its key technology is
The position of integrated A T cut type heat sensitive resonance instrument resonator quick with power sets: its long limit axially becomes 60 ° of angles with quartz crystal X-axis,
Be in temperature sensitive and for the insensitive orientation of pressure.Additionally, its standard resonant frequency and the quick resonator of power are at pressure etc.
Resonant frequency in zero time is close, but unequal, and generally both resonant frequency differences should be less than equal to 0.4kc.Heat sensitive resonance instrument is long
The X-axis that degree direction is taken as with quartz deflects the direction of 60 °, and length dimension is l, and width to be Z axial, its width dimensions is w.
Therefore, although heat sensitive resonance instrument has born pressure, but its frequency-pressure change rate is equal to zero.
2), unstressed sealing technology be the core process affecting QPS accuracy, long-time stability and temperature stability, be
Promote further its accuracy, improve the maximum Radix Clematidis Clarkeanae of the technical specifications such as its stability, but home and abroad does not also have at present
Find the seal, sealing materials and technique mated completely with Quartz Force dependent sensor 4.
The emphasis of the present invention is not being found on the seal, sealing materials mated completely with Quartz Force dependent sensor 4, but visits
A kind of new way of rope: Quartz Force dependent sensor and its treat between sealing of metal material, to have made one layer of laminated film thickness
Being the amorphous state SiC layer about 80 μm, recycling heteroepitaxy cladding thickness in amorphous state SiC layer is less than the SiO2 of 10 μm
Layer.The coefficient of elasticity of this composite film material and temperature coefficient be both not equal to quartz material, were also not equal to treat sealing of metal material,
But the purpose relatively, making SiC layer is to grow the SiO2 hetero-epitaxy that a layer lattice constant difference is big on the monosilicon
Layer, in order to the semicircular end lower surface of resonator quick with power realizes unstressed sealing-in.The elasticity of this amorphous state silicon carbide layer is excellent
Good, and the effect of cushion can be played.Therefore when variation of ambient temperature, although the thermal coefficient of expansion of silicon and quartz material is not
Deng, but due to the Absorption of this cushion, the harmful effect of its thermal stress is negligible.Therefore, although " micro-
See " go up quartz material and treat sealing of metal material Incomplete matching, but on " macroscopical ", in certain warm area scope
The most do not show reduction resonance type quartz crystal crystal pressure transducer resolution, accuracy and the thermal stress of temperature stability.
In other words, on " macroscopical ", it is achieved that " the unstressed sealing-in " in the range of certain warm area, thus it is high-precision to solve puzzlement at present
Close, the technical barrier disturbing resonance type quartz crystal crystal pressure transducer industry of high stable.Additionally, because amorphous carbon SiClx
Layer and monocrystal silicon, quartz crystal materials, borosilicate glass, the combination of Covar are that the face of a kind of rigidity combines, so it
Bond strength between is big, fully meets the QPS requirement of precision, high stable.
3), the invention discloses a kind of to be become compression stress by measuring pressure and be applied to the novelty of the quick resonator of power and practicality
Device and one chip configure Quartz Force dependent sensor 4 and the method for heat sensitive resonance instrument 3.
Become compression stress to be applied to the power of the quick resonator of power be a kind of compression stress by measuring pressure.This compression stress direction is quick with power
The X-axis (electric axis) of resonator is parallel.Thus cause one chip quartz resonance pressure/temperature sensor not only pressure measurement accuracy high,
Anti-overload ability is strong, and wide dynamic range, signal processing time is short.
4), the quick resonator of fundamental frequency power of high q-factor and heat sensitive resonance instrument are basis and the keys of QPS.Both are all thickness and cut
Become the AT cut type of C vibration mode.Understand according to formula (7), square being directly proportional of the quick slope of its power and operating frequency, and secondary with overtone
Number is inversely proportional to, and therefore improves power sensitivity sensitivity and should improve operating frequency and reduce stress size.Additionally since the X of AT cut type quartz
Elastic constant on axle and Z axle, causes acoustic bulk wave different with the transmission on Z axle in X-axis, so its vibration displacement
Cross-sectional distribution figure ovalisation.This will cause trap effect reducing, and the minimizing of resonator q, contour vibration spurious mode is strong
The increase of degree.In order to improve the Q-value of resonator, prevent edge pattern conversion and suppression contour vibration spurious mode is formed
Standing wave, in addition to selecting optimal limit ratio (length L/ width W) value, also quartz wafer has been carried out body modification: first profit
With wet etching technique, MFTSR is carried out roughing so that it is power quick resonator length direction is the X axis of quartz, length dimension
For L, its width is that Z is axial, and width dimensions is W.
Claims (9)
1. one chip quartz resonance pressure/temperature sensor, is characterized in that: it includes pressure compression stress changer, sensor
Housing (1), one chip heat sensitive resonance instrument (3), one chip force-sensing sensor (4), reference pressure post (8), pressure interface (9) and the end
Seat (11)；
Pressure compression stress changer includes two pressure conduction posts (5) and pilot flexible sheet (2)；
The lower end of two pressure conduction posts (5) is each attached to the upper surface of pilot flexible sheet (2), and with pilot flexible sheet
(2) it is integrally formed part；Reference pressure post (8) is the hollow tubular structure that top has ladder breach, the end of reference pressure post (8)
End is pressure interface (9)；
The top of reference pressure post (8) is fixed on pilot flexible sheet (2) lower surface, and is positioned in pilot flexible sheet (2)
The heart；The sidewall of reference pressure post (8) has four manholes (6), and described four manholes (6) are by along reference pressure post
(8) median centre is symmetrical, and four manholes (6) close on the top of reference pressure post (8)；Under reference pressure post (8)
Portion passes base (11) center；
Pilot flexible sheet (2) be located in airtight company between the upside of base (11), and pilot flexible sheet (2) and base (11)
Connect composition Pressure chamber；Sensor housing (1) be located in the upside of base (11), and pilot flexible sheet (2) is positioned at sensor housing
(1) and between base (11)；Two pressure conduction posts (5), one chip force-sensing sensor (4) and one chip heat sensitive resonance instrument (3)
It is respectively positioned between pilot flexible sheet (2) and sensor housing (1)；
Two pressure conduction posts (5) are positioned at the both sides that reference pressure post (8) extended line is relative；And reference pressure post (8) extended line
Equal with the distance between two pressure conduction posts (5)；
Every pressure conduction post (5) is top and has the cylinder of half crop breach；The two ends of one chip force-sensing sensor (4)
It is separately fixed in half crop breach of two pressure conduction posts (5)；It is quick that one chip heat sensitive resonance instrument (3) is fixed on one chip power
On sensor (4)；
When fluid pressure enters Pressure chamber and pressure higher than an atmospheric pressure by the pressure interface (9) of reference pressure post (8)
Time, convex deformation in pilot flexible sheet (2) generation, due to fixing between reference pressure post (8) and pilot flexible sheet (2)
Draw, two pressure conduction posts (5) all produce inside contraction deformation, the monolithic between two pressure conduction posts (5)
Formula force-sensing sensor (4) applies the power of horizontal direction and increases, and the pressure of Pressure chamber is the highest, is applied to the power of horizontal direction more
Greatly；
When fluid pressure enters Pressure chamber and pressure less than an atmospheric pressure by the pressure interface (9) of reference pressure post (8)
Time, the deformation projection of pilot flexible sheet (2) diminishes, and two pressure conduction posts (5) are recovered to vertical direction, pass to two pressure
The power of the horizontal direction that the one chip force-sensing sensor (4) between guide pillar (5) applies diminishes, and the pressure of Pressure chamber is the lowest,
The power being applied to horizontal direction is the least.
One chip quartz resonance pressure/temperature sensor the most according to claim 1, it is characterized in that: further comprising sealing
Circle (10), described sealing ring (10) is set on the cylinder of reference pressure post (8), and is positioned at upper four circles of reference pressure post (8)
Between shape through hole (6) and base (11).
One chip quartz resonance pressure/temperature sensor the most according to claim 1, is characterized in that: reference pressure post (8)
Bottom be provided with external screw thread, threaded with sealing nut in reference pressure post (8) bottom.
One chip quartz resonance pressure/temperature sensor the most according to claim 1, is characterized in that: one chip temperature-sensitive is humorous
The angle between device (3) and one chip force-sensing sensor (4) that shakes is θ, one chip force-sensing sensor (4) and one chip temperature-sensitive resonance
Device (3) is integrated, and is provided with stress damping hole between one chip force-sensing sensor (4) and one chip heat sensitive resonance instrument (3)
(13)。
One chip quartz resonance pressure/temperature sensor the most according to claim 4, is characterized in that: θ is in the range of 45 °
～75 °.
One chip quartz resonance pressure/temperature sensor the most according to claim 4, is characterized in that: the quick biography of one chip power
Sensor (4) includes the quick part of pressure conduction post, power and the quick resonator of power (12), and the quick resonator of power (12) is fixed on pressure conduction post master
The side of body, the quick part of power is arranged on the two ends of pressure conduction post, and the quick part of power is integrally formed part with pressure conduction post.
One chip quartz resonance pressure/temperature sensor the most according to claim 6, is characterized in that: the quick resonator of power
(12) resonant frequency is 15.592MHz, and the resonance internal resistance of the quick resonator of measurement power is 25 Ω.
One chip quartz resonance pressure/temperature sensor the most according to claim 4, is characterized in that: one chip temperature-sensitive is humorous
The device (3) that shakes uses integrated A T cut type heat sensitive resonance instrument to realize, and the long limit of integrated A T cut type heat sensitive resonance instrument is quick with power the most humorous
The angle between device X-direction that shakes is 60 ° of angles, and one chip heat sensitive resonance instrument (3), one chip force-sensing sensor (4) connecting place are carved
Erosion has the through hole of multiple a diameter of 1mm as stress damping hole；The standard resonant frequency of one chip heat sensitive resonance instrument (3) and monolithic
The formula force-sensing sensor (4) the resonant frequency difference when pressure is equal to zero is less than or equal to 0.4kc.
9. the technique of the middle one chip force-sensing sensor of the one chip quartz resonance pressure/temperature sensor described in claim 1
Method, it is characterised in that；Concretely comprising the following steps of the method:
Step one, utilize photoetching and anisotropic etching legal system to make 2 plate shapes to be similar to semicircular monocrystal silicon structure part；
Step 2, to utilize semiconductor technology to make monocrystal silicon structure part upper surface and side be covered with thickness be the amorphous state about 80 μm
SiC layer；
Step 3, utilize heteroepitaxy in amorphous state SiC layer cladding thickness less than the SiO2 layer of 10 μm；
Step 4, oxygen plasma surface activation method is utilized to make to be covered with monocrystal silicon structure part and the power of SiO2 layer under normal temperature condition
Quick resonator bonding being integrally formed power sensing structure part；
Step 5, use electrostatic sealing-in method at the equal sealing-in in integrated force sensing structure part two ends semicircle borosilicate glass sheet, then
Make borosilicate glass sheet be sintered together with pressure conduction post with cryogenic glass powder, form rigidly connected unstressed sealing-in
Body.
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| CN109399557B (en) * | 2018-11-07 | 2020-05-05 | 中国电子科技集团公司第二十六研究所 | Manufacturing method of high-stability MEMS (micro-electromechanical systems) resonance device |
| CN109883565A (en) * | 2019-03-13 | 2019-06-14 | 中国电子科技集团公司第四十九研究所 | A kind of silicon micro-resonance type temperature sensitive chip based on SOI |
| CN109883565B (en) * | 2019-03-13 | 2020-10-13 | 中国电子科技集团公司第四十九研究所 | Silicon micro-resonance type temperature sensitive chip based on SOI |
| CN115655505A (en) * | 2022-12-29 | 2023-01-31 | 常州奇军苑传感技术有限公司 | Quartz tuning fork temperature sensor with distortion model |
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