CN106206543A - Based on nano aluminum nitride/composite polyimide material keyset and preparation method thereof - Google Patents
Based on nano aluminum nitride/composite polyimide material keyset and preparation method thereof Download PDFInfo
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- 229920001721 polyimide Polymers 0.000 title claims abstract description 70
- 239000004642 Polyimide Substances 0.000 title claims abstract description 59
- 239000002131 composite material Substances 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 23
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- 239000000725 suspension Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 6
- 238000000498 ball milling Methods 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 238000000875 high-speed ball milling Methods 0.000 claims description 5
- 239000007822 coupling agent Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 150000002466 imines Chemical class 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000002787 reinforcement Effects 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract description 2
- 229910017083 AlN Inorganic materials 0.000 abstract 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 239000002041 carbon nanotube Substances 0.000 description 7
- 229910021393 carbon nanotube Inorganic materials 0.000 description 7
- 230000006872 improvement Effects 0.000 description 5
- 238000005459 micromachining Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000004919 Carbon nanotube reinforced polymer Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/28—Nitrogen-containing compounds
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
- C08K2003/282—Binary compounds of nitrogen with aluminium
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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Abstract
Description
技术领域technical field
本发明涉及微电子封装技术领域，具体地，涉及一种基于纳米氮化铝/聚酰亚胺复合材料转接板及其制备方法。The invention relates to the technical field of microelectronic packaging, in particular to an adapter plate based on nano-aluminum nitride/polyimide composite material and a preparation method thereof.
背景技术Background technique
基于硅通孔(TSV)互连的三维堆叠封装以其堆叠密度最大、片间互连线最短、外形尺寸最小和显著降低功耗、提升芯片速度的潜力而备受重视，被认为是引线键合堆叠封装之后最具发展潜力的高密度3D封装技术，又称TSV封装。The three-dimensional stacked package based on through-silicon via (TSV) interconnection has attracted much attention for its highest stacking density, shortest inter-chip interconnection, smallest form factor, and the potential to significantly reduce power consumption and increase chip speed. It is considered a wire bond The most promising high-density 3D packaging technology after stacked packaging, also known as TSV packaging.
TSV转接板是按照设计分布的金属柱阵列和填充其间的绝缘介质构成，PI、BCB等是目前绝缘介质层最常用的聚合物介质材料，虽然拥有过程简单、效率高、成本低、台阶覆盖性好等显著优点，但热导率低、热膨胀系数偏大、易于被有机溶剂溶胀，而影响了转接板的性能。纳米氮化铝(AlN)以其热导率高、与Si的线热膨胀系数接近匹配、力学性能优良且无毒的优势而可以应用于增强聚酰亚胺薄膜，进而获得综合性能优良的复合薄膜。The TSV adapter plate is composed of an array of metal pillars distributed according to the design and an insulating medium filled in between. PI, BCB, etc. are currently the most commonly used polymer dielectric materials for insulating dielectric layers. Although they have simple process, high efficiency, low cost, and step coverage Good performance and other significant advantages, but low thermal conductivity, large thermal expansion coefficient, easy to be swollen by organic solvents, which affects the performance of the adapter plate. Nano-aluminum nitride (AlN) can be applied to reinforced polyimide film due to its high thermal conductivity, close matching with the linear thermal expansion coefficient of Si, excellent mechanical properties and non-toxicity, so as to obtain a composite film with excellent comprehensive properties. .
经检索，103325754A、基于碳纳米管增强的聚合物复合材料转接板及其制备方法，该发明提供了一种基于碳纳米管增强的聚合物复合材料转接板及其制备方法，包括金属柱、侧壁绝缘膜、碳纳米管网络结构和聚合物，其中：用侧壁绝缘膜包围金属柱的侧壁形成金属柱阵列规则排布在碳纳米管网络结构和聚合物组成的转接板基体中，碳纳米管网络结构内的空隙及碳纳米管网络结构与金属柱间的空隙由聚合物填充完整。After searching, 103325754A, carbon nanotube-based polymer composite adapter plate and its preparation method, the invention provides a carbon nanotube-based polymer composite adapter plate and its preparation method, including metal pillars , side wall insulating film, carbon nanotube network structure and polymer, wherein: the side wall of the metal column is surrounded by the side wall insulating film to form an array of metal columns regularly arranged on the adapter plate matrix composed of the carbon nanotube network structure and polymer In this method, the gaps in the carbon nanotube network structure and the gaps between the carbon nanotube network structure and the metal pillars are completely filled by the polymer.
但是，碳纳米管增强的聚合物复合材料转接板及制备过程中，侧壁绝缘膜可能存在一定的缺陷，这个增加了制备工艺的难度。另外，碳纳米管的存在可能影响介质层的绝缘和介电性能，不利于转接板整体综合性能的提高。However, during the carbon nanotube-reinforced polymer composite adapter plate and the preparation process, there may be certain defects in the sidewall insulating film, which increases the difficulty of the preparation process. In addition, the existence of carbon nanotubes may affect the insulation and dielectric properties of the dielectric layer, which is not conducive to the improvement of the overall comprehensive performance of the adapter plate.
发明内容Contents of the invention
针对现有技术中的缺陷，本发明的目的是提供一种基于纳米氮化铝/聚酰亚胺复合材料转接板及其制备方法，本发明既能提高转接板的热导率和力学性能，又能显著降低其热膨胀系数，而且工艺成本低，可用于工业化生产。In view of the defects in the prior art, the purpose of the present invention is to provide a nano-aluminum nitride/polyimide composite adapter plate and its preparation method. The present invention can improve the thermal conductivity and mechanical properties of the adapter plate. performance, and can significantly reduce its coefficient of thermal expansion, and the process cost is low, which can be used in industrial production.
根据本发明的一个方面，提供一种基于纳米氮化铝/聚酰亚胺复合材料转接板，包括转接板基体，在所述转接板基体内有金属柱阵列结构，所述金属柱阵列间的空隙由纳米氮化铝增强的聚酰亚胺薄膜填充，所述金属柱阵列垂直贯穿于所述转接板基体。According to one aspect of the present invention, there is provided an adapter plate based on nano-aluminum nitride/polyimide composite material, including an adapter plate base, and a metal column array structure is arranged in the adapter plate base, and the metal column The gaps between the arrays are filled with polyimide films reinforced by nano-aluminum nitride, and the array of metal pillars vertically penetrates through the substrate of the adapter plate.
优选地，所述的纳米氮化铝增强的聚酰亚胺薄膜中，氮化铝的质量含量为8-20％、厚度为100-300微米。Preferably, in the nano-aluminum nitride-reinforced polyimide film, the mass content of aluminum nitride is 8-20%, and the thickness is 100-300 microns.
优选的，所述的氮化铝的质量含量为15-20％。高质量分数的氮化铝改性聚酰亚胺薄膜可以显著提高热导率，显著降低热膨胀性能。Preferably, the mass content of the aluminum nitride is 15-20%. The aluminum nitride modified polyimide film with high mass fraction can significantly improve thermal conductivity and significantly reduce thermal expansion performance.
优选地，所述的金属柱阵列的金属为铬、铜、金、钛、镍或合金的一种。Preferably, the metal of the metal column array is one of chromium, copper, gold, titanium, nickel or an alloy.
聚酰亚胺具有良好的绝缘能力，优异的微加工性能，而使用于转接板中，但是聚酰亚胺的热导率低，不利于转接板的散热，而且热膨胀系数大，容易产生热失配，而限制该转接板的应用。纳米氮化铝却具有较高的热导率，良好的力学性能，聚酰亚胺和纳米氮化铝两者形成的复合材料，纳米氮化铝在聚酰亚胺基体中均匀分布，连接成网状，形成一个微导热的通道，相比于纯聚酰亚胺，热导率显著提高，热膨胀性能显著降低。这无疑对转接板的性能提高具有重要的意义。Polyimide has good insulation ability and excellent micromachining performance, and it is used in the adapter board, but the thermal conductivity of polyimide is low, which is not conducive to the heat dissipation of the adapter board, and the thermal expansion coefficient is large, which is easy to produce thermal mismatch, which limits the application of the interposer board. Nano-aluminum nitride has high thermal conductivity and good mechanical properties. The composite material formed by polyimide and nano-aluminum nitride, nano-aluminum nitride is uniformly distributed in the polyimide matrix, and connected into a composite material. Mesh, forming a micro heat conduction channel, compared with pure polyimide, the thermal conductivity is significantly improved, and the thermal expansion performance is significantly reduced. This is undoubtedly of great significance to the performance improvement of the adapter board.
如何开发一套复合材料制备工艺并且使之兼容于转接板的微加工工艺，成为业内一个重要的问题。目前，在制备复合材料过程中，纳米氮化铝容易团聚，这样使得纳米氮化铝的含量不高，一般为10％以下，而不宜于发挥复合材料的综合性能。How to develop a composite material preparation process and make it compatible with the micromachining process of the adapter plate has become an important issue in the industry. At present, in the process of preparing composite materials, nano-aluminum nitride is easy to agglomerate, so that the content of nano-aluminum nitride is not high, generally below 10%, which is not suitable for the comprehensive performance of composite materials.
本发明通过利用硅烷偶联剂(优选为KH550)处理过的纳米氮化铝，可以有效阻止了纳米氮化铝的团聚，并且使用了高速球磨工艺，可以获得高质量分数的氮化铝改性聚酰亚胺薄膜。The present invention can effectively prevent the agglomeration of nano-aluminum nitride by using the nano-aluminum nitride treated with a silane coupling agent (preferably KH550), and use a high-speed ball milling process to obtain a high-quality fraction of aluminum nitride modification Polyimide film.
根据本发明的另一个方面，提供一种基于纳米氮化铝/聚酰亚胺复合材料转接板的制备方法，所述方法通过在聚酰亚胺基体中引入纳米氮化铝增强体，获得纳米氮化铝增强的聚酰亚胺复合悬浮液，进而通过旋涂工艺制备纳米氮化铝增强的聚酰亚胺复合薄膜并应用于转接板中，从而得到基于纳米氮化铝/聚酰亚胺复合材料转接板。According to another aspect of the present invention, there is provided a method for preparing an adapter plate based on nano-aluminum nitride/polyimide composite material. The method is obtained by introducing a nano-aluminum nitride reinforcement into a polyimide matrix. Nano-aluminum nitride-reinforced polyimide composite suspension, and then prepare nano-aluminum nitride-reinforced polyimide composite film by spin-coating process and apply it in the adapter plate, so as to obtain nano-aluminum nitride/polyimide composite suspension Imine Composite Adapter Board.
优选地，所述方法包括如下步骤：Preferably, the method comprises the steps of:
第一步、用偶联剂对纳米氮化铝进行改性，通过超声和高速球磨分散工艺，将改性后的纳米氮化铝分散于聚酰亚胺涂层胶中，获得含有纳米氮化铝的聚酰亚胺悬浮液；The first step is to modify the nano-aluminum nitride with a coupling agent, and disperse the modified nano-aluminum nitride in the polyimide coating glue through ultrasonic and high-speed ball milling dispersion process to obtain nano-aluminum nitride Aluminum polyimide suspension;
第二步、在玻璃基片上甩正胶作为牺牲层，并在牺牲层上溅射种子层，甩胶再光刻，对玻璃基片表面进行图形化处理，通过电镀形成金属柱阵列；去除图形化留下的光刻胶，去除裸露的种子层，得到暴露的金属柱阵列；The second step is to throw the positive glue on the glass substrate as a sacrificial layer, sputter the seed layer on the sacrificial layer, throw the glue and then photolithography, pattern the surface of the glass substrate, and form an array of metal pillars by electroplating; remove the pattern Thin the remaining photoresist, remove the exposed seed layer, and obtain an array of exposed metal pillars;
第三步、通过旋涂工艺将第一步制备得到的含有纳米氮化铝的聚酰亚胺悬浮液填充到金属柱阵列，升温固化；然后表面研磨处理使金属柱顶端从聚酰亚胺复合薄膜中露出，去牺牲层光刻胶，将转接板释放出来，从而得到基于纳米氮化铝/聚酰亚胺复合材料转接板。The third step is to fill the polyimide suspension containing nano-aluminum nitride prepared in the first step into the metal pillar array through the spin coating process, and heat up and solidify; then the surface is ground to make the top of the metal pillar compound from the polyimide The film is exposed, and the photoresist of the sacrificial layer is removed to release the adapter plate, thereby obtaining an adapter plate based on nano-aluminum nitride/polyimide composite material.
更优选地，第一步中：More preferably, in the first step:
对纳米氮化铝进行预处理，用亲水性溶剂配成氮化铝悬浮液，经超声分散和球磨后加入聚酰亚胺涂层胶，再通过球磨工艺得到含有纳米氮化铝的聚酰亚胺悬浮液。Pretreat nano-aluminum nitride, make aluminum nitride suspension with hydrophilic solvent, add polyimide coating glue after ultrasonic dispersion and ball milling, and then obtain polyimide containing nano-aluminum nitride through ball milling process imine suspension.
更优选地，所述高速球磨工艺，球磨转速设置为450-600转每分钟。More preferably, in the high-speed ball milling process, the ball milling speed is set at 450-600 revolutions per minute.
更优选地，所述偶联剂为硅烷偶联剂。More preferably, the coupling agent is a silane coupling agent.
更优选地，所述硅烷偶联剂为KH550。More preferably, the silane coupling agent is KH550.
与现有技术相比，本发明具有如下的有益效果：Compared with the prior art, the present invention has the following beneficial effects:
本发明先通过光刻显影工艺进行图形化，电镀形成金属柱阵列，然后以旋涂方式在金属柱阵列间隙内填充入氮化铝/聚酰亚胺复合薄膜，表面研磨处理使金属柱顶端从聚合物中露出，从而形成一种纳米氮化铝/聚酰亚胺复合材料转接板。本发明所述制备方法工艺流程简单、成本较低，可用于工业化生产。In the present invention, patterning is carried out through a photolithographic development process, and an array of metal pillars is formed by electroplating, and then aluminum nitride/polyimide composite films are filled in the gaps of the metal pillar arrays by spin coating, and the surface grinding treatment makes the tops of the metal pillars from The polymer is exposed to form a nano-aluminum nitride/polyimide composite interposer. The preparation method of the invention has simple technological process and low cost, and can be used in industrialized production.
本发明通过纳米氮化铝/聚酰亚胺复合膜代替了传统的聚酰亚胺作为绝缘介质，使聚合物转接板的热导率、力学强度有很大的提升，同时热膨胀系数显著下降，扩大了转接板的使用范围，延长了转接板的使用寿命。The present invention replaces the traditional polyimide as the insulating medium by the nano-aluminum nitride/polyimide composite film, so that the thermal conductivity and mechanical strength of the polymer adapter plate are greatly improved, and the thermal expansion coefficient is significantly reduced. , which expands the scope of use of the adapter board and prolongs the service life of the adapter board.
附图说明Description of drawings
通过阅读参照以下附图对非限制性实施例所作的详细描述，本发明的其它特征、目的和优点将会变得更明显：Other characteristics, objects and advantages of the present invention will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:
图1为本发明一实施例的转接板的结构示意图，其中(a)为平面图，(b)为纵截面图；Fig. 1 is a structural schematic diagram of an adapter plate according to an embodiment of the present invention, wherein (a) is a plan view, and (b) is a longitudinal sectional view;
图2为本发明一实施例的制备方法流程图。Fig. 2 is a flow chart of the preparation method of an embodiment of the present invention.
图中：转接板基体1，金属柱阵列2，纳米氮化铝增强的聚酰亚胺薄膜3。In the figure: an adapter board substrate 1, a metal pillar array 2, and a polyimide film 3 reinforced by nano-aluminum nitride.
具体实施方式detailed description
下面结合具体实施例对本发明进行详细说明。以下实施例将有助于本领域的技术人员进一步理解本发明，但不以任何形式限制本发明。应当指出的是，对本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进。这些都属于本发明的保护范围。The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.
如图1所示，一种基于纳米氮化铝增强的聚酰亚胺复合材料转接板，包括转接板基体1，在所述转接板基体内有金属柱阵列2，所述金属柱阵列2间的空隙由纳米氮化铝增强的聚酰亚胺薄膜3填充，所述金属柱阵列2垂直贯穿于所述转接板基体1。As shown in Figure 1, a polyimide composite adapter plate based on nano-aluminum nitride reinforcement includes an adapter plate base 1, and a metal column array 2 is arranged in the adapter plate base, and the metal column The gaps between the arrays 2 are filled with nano-aluminum nitride reinforced polyimide film 3 , and the metal post array 2 vertically penetrates through the adapter plate base 1 .
本实施例中，所述纳米氮化铝增强的聚酰亚胺薄膜3中，氮化铝的质量含量为8-20％、厚度为100-300微米。In this embodiment, in the nano-aluminum nitride-reinforced polyimide film 3 , the mass content of aluminum nitride is 8-20%, and the thickness is 100-300 microns.
作为优选的，所述氮化铝的质量含量为15-20％。更为优选的，所述氮化铝的质量含量为20％。Preferably, the mass content of the aluminum nitride is 15-20%. More preferably, the mass content of the aluminum nitride is 20%.
本实施例中，所述金属柱阵列2为铬、铜、金、钛、镍或合金的一种。In this embodiment, the metal pillar array 2 is one of chromium, copper, gold, titanium, nickel or an alloy.
本实施例所述转接板通过纳米氮化铝/聚酰亚胺复合膜代替了传统的聚酰亚胺作为绝缘介质。既能提高转接板的热导率和力学性能，又能显著降低其热膨胀系数。The adapter board described in this embodiment replaces the traditional polyimide as the insulating medium through the nano-aluminum nitride/polyimide composite film. It can not only improve the thermal conductivity and mechanical properties of the adapter plate, but also significantly reduce its thermal expansion coefficient.
如图2所示，一种基于纳米氮化铝/聚酰亚胺复合材料转接板的制备方法，所述方法包括如下步骤：As shown in Figure 2, a kind of preparation method based on nano-aluminum nitride/polyimide composite adapter plate, described method comprises the steps:
首先，纳米氮化铝增强的聚酰亚胺薄膜的制备，具体包括如下步骤：First, the preparation of the polyimide film reinforced by nano-aluminum nitride specifically includes the following steps:
第一步、先把硅烷偶联剂KH550和溶剂丙酮混合，加入氮化铝纳米粉，超声分散20-30min，在空气中使丙酮自然挥发，然后放人到真空干燥箱中于150℃，反应2h，然后对将纳米氮化铝改性成功，然后加到分散剂(NMP)中，超声分散15min；The first step is to mix the silane coupling agent KH550 and the solvent acetone, add aluminum nitride nanopowder, disperse ultrasonically for 20-30 minutes, let the acetone volatilize naturally in the air, and then put it in a vacuum drying oven at 150°C to react 2h, then successfully modified the nano-aluminum nitride, then added to the dispersant (NMP), and ultrasonically dispersed for 15min;
第二步、将第一步得到的分散液，加入球磨罐中，然后在球磨机中强力球磨分散2h,球磨转速设置为450-600转每分钟；The second step is to add the dispersion liquid obtained in the first step into a ball mill tank, and then disperse it in a ball mill for 2 hours with a strong ball mill, and set the ball mill speed to 450-600 rpm;
第三步、在第二步的分散液中加入质量为10g的聚酰亚胺涂层胶，纳米氮化铝质量分数应该保持8-20％左右，该组分的复合材料性能提高明显，并且含有纳米氮化铝的聚酰亚胺悬浮液成膜性强，仍然兼容于微加工工艺；然后接着球磨10h；The third step is to add 10g of polyimide coating glue to the dispersion liquid in the second step, and the mass fraction of nano-aluminum nitride should be kept at about 8-20%. The performance of the composite material of this component is obviously improved, and The polyimide suspension containing nano-aluminum nitride has strong film-forming properties and is still compatible with micro-machining processes; then ball milling for 10 hours;
第四步、将第三步得到的分散液置于真空箱，真空保持30min，得到了纳米氮化铝/聚酰亚胺的复合悬浊液。In the fourth step, the dispersion liquid obtained in the third step is placed in a vacuum box and kept in vacuum for 30 minutes to obtain a composite suspension of nano-aluminum nitride/polyimide.
接着，转接板金属柱阵列的制备，具体包括如下步骤：Next, the preparation of the metal column array of the adapter plate specifically includes the following steps:
第五步、在玻璃基片上甩5微米厚的光刻胶作为牺牲层，在光刻胶表面溅射Cr/Cu种子层，其中：Cr厚度20纳米，Cu厚度80纳米；The fifth step is to throw a 5 micron thick photoresist on the glass substrate as a sacrificial layer, and sputter a Cr/Cu seed layer on the photoresist surface, wherein: the thickness of Cr is 20 nanometers, and the thickness of Cu is 80 nanometers;
第六步、在第五步的Cr/Cu种子层表面旋涂光刻胶并图形化，在常规的电镀工艺条件下电镀Cu，厚度为100-300微米；The sixth step is to spin-coat photoresist on the surface of the Cr/Cu seed layer in the fifth step and pattern it, and electroplate Cu under conventional electroplating process conditions with a thickness of 100-300 microns;
第七步、去除第六步图形化留下的光刻胶，去除暴露的种子层，露出裸露的金属柱阵列。In the seventh step, the photoresist left by the patterning in the sixth step is removed, and the exposed seed layer is removed to expose the bare metal pillar array.
最后，纳米氮化铝/聚酰亚胺复合材料转接板的制备，具体包括如下步骤：Finally, the preparation of the nano-aluminum nitride/polyimide composite adapter plate specifically includes the following steps:
第八步、利用旋涂工艺将第四步得到的纳米氮化铝/聚酰亚胺的复合悬浊液旋涂到第七步得到的金属柱阵列，并升温固化,固化曲线为1分钟升温1℃，然后在90℃，140℃，160℃，190℃,220℃,250℃分别保温1小时，最后随炉冷却；Step 8: Spin-coat the composite suspension of nano-aluminum nitride/polyimide obtained in step 4 onto the metal pillar array obtained in step 7 by spin coating process, and heat up to cure. The curing curve is 1 minute temperature rise 1°C, then hold at 90°C, 140°C, 160°C, 190°C, 220°C, 250°C for 1 hour respectively, and finally cool with the furnace;
第九步、利用机械方法进行磨削，使金属柱顶端从复合薄膜中露出，去牺牲层光刻胶，将转接板释放出来，从而得到基于纳米氮化铝/聚酰亚胺复合材料转接板。The ninth step is to use mechanical methods to grind, so that the top of the metal column is exposed from the composite film, remove the photoresist of the sacrificial layer, and release the adapter plate, so as to obtain a nano-aluminum nitride/polyimide composite material transfer plate. Take board.
本发明先通过光刻显影工艺进行图形化，电镀形成金属柱阵列，然后以旋涂方式在金属柱阵列间隙内填充入氮化铝/聚酰亚胺复合薄膜，表面研磨处理使金属柱顶端从聚合物中露出，从而形成一种纳米氮化铝/聚酰亚胺复合材料转接板。本发明所述制备方法工艺流程简单、成本较低，可用于工业化生产。In the present invention, patterning is carried out through a photolithographic development process, and an array of metal pillars is formed by electroplating, and then aluminum nitride/polyimide composite films are filled in the gaps of the metal pillar arrays by spin coating, and the surface grinding treatment makes the tops of the metal pillars from The polymer is exposed to form a nano-aluminum nitride/polyimide composite interposer. The preparation method of the invention has simple technological process and low cost, and can be used in industrialized production.
需要指出的是，上述实施例采用微加工方法只是本发明的一实施例，还可以，金属结构的尺寸及种类，不仅仅局限于上述实例的描述，均可实现本发明的目的。It should be pointed out that the micromachining method used in the above embodiment is only an embodiment of the present invention, and the size and type of the metal structure are not limited to the description of the above examples, and the purpose of the present invention can be achieved.
以上实例描述了本发明的优点及微加工方法，本行业的技术人员应该了解，在不脱离本发明精神和范围的前提下本发明还会有各种改进和优化，这些改进和优化都落入要求保护的本发明范围内，本发明要求保护范围由所附的权利要求书及其等同物界定。The above examples have described advantages and micromachining methods of the present invention, and those skilled in the art should understand that the present invention also has various improvements and optimizations without departing from the spirit and scope of the present invention, and these improvements and optimizations all fall into Within the scope of the claimed invention, the claimed scope of the present invention is defined by the appended claims and their equivalents.
以上对本发明的具体实施例进行了描述。需要理解的是，本发明并不局限于上述特定实施方式，本领域技术人员可以在权利要求的范围内做出各种变形或修改，这并不影响本发明的实质内容。Specific embodiments of the present invention have been described above. It should be understood that the present invention is not limited to the specific embodiments described above, and those skilled in the art may make various changes or modifications within the scope of the claims, which do not affect the essence of the present invention.
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