CN106159404B - A kind of non-uniform microstrip line is to strip line transition structure - Google Patents
A kind of non-uniform microstrip line is to strip line transition structure Download PDFInfo
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- CN106159404B CN106159404B CN201610871225.3A CN201610871225A CN106159404B CN 106159404 B CN106159404 B CN 106159404B CN 201610871225 A CN201610871225 A CN 201610871225A CN 106159404 B CN106159404 B CN 106159404B
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- 230000007704 transition Effects 0.000 title claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 238000001465 metallisation Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011449 brick Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/18—Waveguides; Transmission lines of the waveguide type built-up from several layers to increase operating surface, i.e. alternately conductive and dielectric layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
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Abstract
The invention discloses a kind of non-uniform microstrip lines to strip line transition structure, comprising: metal layer and dielectric layer, the metal layer number of plies are N, and N >=4, N a layer metal layer stack gradually setting, and the number of plies of dielectric layer is N-1, and dielectric layer is set between every adjacent two layers metal layer；Further include: non-homogeneous input microstrip line, non-homogeneous output microstrip line, strip line, circular trough and signal blind hole；Non-homogeneous input, output microstrip line are set on first layer metal layer；As metal layer number of plies N=4, strip line is set on third layer metal layer, and circular trough is set on second layer metal layer；When metal layer number of plies N > 4, strip line is set in third to any one layer of metal layer between N-1 layers, circular trough be set to second to strip line where metal layer between any one layer on；The upright projection of signal blind hole is located in the upright projection of circular trough；Signal blind hole is for connecting strip line and non-homogeneous input, output micro-strip.The present invention being capable of non-uniform microstrip line structure.
Description
Technical field
The present invention relates to the radiofrequency signal transition structure in a kind of microwave transceiver module, in particular to a kind of non-homogeneous micro-strip
Line is to strip line transition structure.
Background technique
Multifunction, miniaturization, short development cycle and the low cost of electronic information are that system user constantly proposes
It is required that being also always its developing direction.By taking personal mobile communications as an example, the size of mobile phone narrows down to existing from " brick " of the nineties
Card holder size, function from that time simple call extension till now voice, data, multimedia, internet, take pictures and
MP3 etc..The multifunction of military electronic information system (such as spaceborne sensing and processing system) and miniaturization are even more paying close attention to
Focus.
Microstrip line is a kind of transmission line of inhomogeneous medium filling, though it cannot propagate real TEM mould, its transmission
Mode and TEM mould are quite similar.In now many microwave modules, active device is typically placed in circuit board surface metal
On, it mostly uses microstrip line to be interconnected between device, for the ease of installing and debugging, saves the layout area of circuit, realize
DC bias networks, passive circuit etc., are often embedded in the inside of multilager base plate by Miniaturization Design, and strip transmission line due to
The structure and design feature of its own have preferable shielding character.How surface radio frequency layer microstrip line and intermediate strip line are realized
Between signal interconnection transmission, become one of the key technology designed for microwave module.
It is found after being retrieved to existing micro-strip to strip line exchanging structure, as information communicates the hair of the 2nd phase in 2016
Table (KU wave band ltcc substrate micro-strip to strip line vertical interconnection designs), IEEE TRANS.ON MICROWAVE AND THEORY
(the High Performances of Shielded LTCC Vertical delivered in TECHNOLOGY volume 53
Transitions From DC to 50GHz), the two all passes through load LTCC technique and realizes uniform microstrip line to strip line
Transition structure, but its structure can not be suitable for non-uniform microstrip line structure.
Summary of the invention
The present invention is directed to above-mentioned problems of the prior art, proposes a kind of non-uniform microstrip line to strip line transition knot
Structure, in multilayer dielectricity layer structure, different microstrip lines is realized in processing on different number of plies dielectric thicknesses, blind by adjusting signal
Gap around hole, thus the bandwidth of operation needed for realizing.
In order to solve the above technical problems, the present invention is achieved through the following technical solutions:
The present invention provides a kind of non-uniform microstrip line to strip line transition structure comprising: metal layer and dielectric layer, institute
The number of plies for stating metal layer is N, and N >=4, the N layers of metal layer stack gradually setting, and the number of plies of the dielectric layer is N-1, is given an account of
Matter layer is set between metal layer described in every adjacent two layers；
Further include: non-homogeneous input microstrip line, non-homogeneous output microstrip line, strip line, circular trough and signal blind hole；
The non-homogeneous input microstrip line and the non-homogeneous output microstrip line are set on metal layer described in first layer；
As the number of plies N=4 of the metal layer, the strip line is set on metal layer described in third layer, the circle
Slot is set on metal layer described in the second layer；
As the number of plies N > 4 of the metal layer, the strip line is set to metal layer described in third layer to described in N-1 layers
On any one layer metal layer between metal layer, the circular trough is set to where second layer metal layer to the strip line
Metal layer between any one layer metal layer on；
The signal blind hole is used to connect the strip line and the non-homogeneous input microstrip line, and connects described band-like
Line and the non-homogeneous output microstrip line.
Preferably, non-uniform microstrip line is to strip line transition structure further include: metallization VIA, the metallization VIA are set
It is placed in the two sides of the non-homogeneous input microstrip line and/or the non-homogeneous output microstrip line.
Preferably, non-uniform microstrip line is to strip line transition structure further include: pad, the pad are mended for loading capacitance
It repays, the capacitance compensation is connected with the signal blind hole.
Preferably, the circular trough is that etching is formed on the metal layer.
Preferably, one end of the non-homogeneous input microstrip line and the non-homogeneous output microstrip line is hanging, for welding
Sub-miniature A connector is connect to be tested.
Preferably, the width of the circular trough is for adjusting stationary wave characteristic.
Preferably, the width of the non-homogeneous input microstrip line, the non-homogeneous output width of microstrip line and described
The width of strip line is for adjusting its respective characteristic impedance.
Compared to the prior art, the invention has the following advantages that
(1) non-uniform microstrip line provided by the invention is provided with more metal layers and multilayer is situated between to strip line transition structure
Matter layer structure can process on the dielectric layer of different medium thickness and realize different microstrip lines, around signal blind hole
Gap, thus realize needed for bandwidth of operation；
(2) non-uniform microstrip line of the invention is to strip line transition structure, using non-uniform microstrip line method, flexibility
By force, scalability is strong, and application is wide；
(3) non-uniform microstrip line of the invention can load pad in signal blind hole, for adding to strip line transition structure
Capacitance compensation is carried, stationary wave characteristic can be improved.
Certainly, it implements any of the products of the present invention and does not necessarily require achieving all the advantages described above at the same time.
Detailed description of the invention
Embodiments of the present invention are described further with reference to the accompanying drawing:
Fig. 1 be the embodiment of the present invention non-uniform microstrip line to strip line transition structure structural schematic diagram；
Fig. 2 be the embodiment of the present invention non-uniform microstrip line to strip line transition structure birds-eye perspective；
Fig. 3 be the embodiment of the present invention non-uniform microstrip line to strip line transition structure size indication figure；
When Fig. 4 is the r1 variation in Fig. 3, the transmission characteristic of the input port of transition structure to output port | S21 | curve
Situation of change；
When Fig. 5 is the r2 variation in Fig. 3, the transmission characteristic of the input port of transition structure to output port | S21 | curve
Situation of change；
Fig. 6 is the narrow band transmission structure chart that the transition structure of the embodiment of the present invention is tested；
Fig. 7 is the return loss result figure of the transition structure of the embodiment of the present invention.
Label declaration: 1- metal layer, 2- dielectric layer, the non-homogeneous input microstrip line of 3-, the non-homogeneous output microstrip line of 4-, 5- band
Shape line, 6- signal blind hole, 7- circular trough, 8- metallization VIA, 9- pad.
Specific embodiment
It elaborates below to the embodiment of the present invention, the present embodiment carries out under the premise of the technical scheme of the present invention
Implement, the detailed implementation method and specific operation process are given, but protection scope of the present invention is not limited to following implementation
Example.
In conjunction with Fig. 1-Fig. 7, non-uniform microstrip line of the invention to strip line transition structure is described in detail, is wrapped
Include: the number of plies of metal layer and dielectric layer, metal layer is N, and N >=4, N a layer metal layer stack gradually setting, and the number of plies of dielectric layer is
N-1, dielectric layer are set between every adjacent two layers metal layer；Further include: non-homogeneous input microstrip line, non-homogeneous output micro-strip
Line, strip line, circular trough and signal blind hole；Non-homogeneous input microstrip line and non-homogeneous output microstrip line are set to first layer gold
Belong on layer；As the number of plies N=4 of metal layer, strip line is set on third layer metal layer, and circular trough is set to second layer metal
On layer；As the number of plies N > 4 of metal layer, strip line is set to third layer metal layer to any one between N-1 layers of metal layer
On layer metal layer, circular trough is set to any one layer of metal layer between the metal layer where second layer metal layer to strip line
On；The upright projection of signal blind hole is located in the upright projection of circular trough, signal blind hole for connect strip line with it is non-homogeneous defeated
Enter microstrip line, and connection strip line and non-homogeneous output microstrip line.
The present embodiment is by taking six layers of metal layer 1 as an example, and dielectric layer 2 is five layers, and structural schematic diagram is as shown in Figure 1, non-homogeneous
It inputs microstrip line 3 and non-homogeneous output microstrip line 4 is arranged on first layer metal layer 1, strip line 5 is arranged in the 4th layer of metal
On layer, circular trough 7 is arranged on second layer metal layer 1, signal blind hole 6 connect non-homogeneous input microstrip line 3 and strip line 5 and
Connect non-homogeneous output microstrip line 4 and strip line 5.Metallization VIA 8 is additionally provided in the present embodiment, metallization VIA 8 is arranged
Around non-homogeneous input microstrip line 3 and non-homogeneous output microstrip line 4, it is used for shielded signal, improves transmission characteristic.This implementation
Pad 9 is additionally provided in example, pad 9 loads in signal blind hole 6, compensates for loading capacitance, connect with signal blind hole 6, can
Improve standing wave.
In the present embodiment, one end of non-homogeneous input microstrip line 3 and non-homogeneous output microstrip line 4 is hanging, for welding SMA
Connector is tested.
In different embodiments, when strip line 5 is set on the 4th layer of metal layer, circular trough 7 may also be disposed on third layer
On metal layer；Strip line 5 may also be arranged on layer 5 metal layer, and when being arranged on layer 5, circular trough 7 may be provided at the
Two layers, may also be arranged on third layer, can also be provided at the 4th layer.
As Fig. 3 gives the size indication figure of the transition structure of the present embodiment, comprising: the diameter r1 of circular trough, pad
The width w1 of diameter r2, signal diameter of blind hole r3, strip line 5, the width w2 of non-homogeneous input microstrip line 3 and non-homogeneous defeated
It is out the width w3 of microstrip line 4, these sizes all have a certain impact to the characteristic of filter, and it is different to can according to need progress
Setting.
As illustrated in figures 4-5, when being set forth with r1, r2 variation, the transition structure of non-uniform microstrip line to strip line
Input port to output port transmission characteristic | S21 | curvilinear motion situation, i.e. standing wave variation characteristic.When becoming larger with r1,
Signal is then bigger by the bandwidth of blind hole, and standing wave is better；When becoming larger with r2, the capacitor loaded on telltale hole is increased, standing wave
Better.
As a result, in institute's frequency measurement section, Insertion Loss is less than the narrow band transmission and return loss that test is set forth such as Fig. 6,7
0.4dB, standing wave is greater than 20dB, as a result excellent.
Disclosed herein is merely a preferred embodiment of the present invention, these embodiments are chosen and specifically described to this specification, is
Principle and practical application in order to better explain the present invention is not limitation of the invention.Anyone skilled in the art
The modifications and variations done within the scope of specification should all be fallen in the range of of the invention protect.
Claims (7)
1. a kind of non-uniform microstrip line is to strip line transition structure characterized by comprising metal layer and dielectric layer, it is described
The number of plies of metal layer is N, and N >=4, the N layers of metal layer stack gradually setting, and the number of plies of the dielectric layer is N-1, the medium
Layer is set between metal layer described in every adjacent two layers；
It further include signal blind hole；
The metal layer include: non-homogeneous input microstrip line, non-homogeneous input microstrip line ground plane, non-homogeneous output microstrip line,
Non-homogeneous output microstrip line ground plane, strip line, strip line upper surface, strip line lower surface and circular trough；
The non-homogeneous input microstrip line and the non-homogeneous output microstrip line are set on metal layer described in first layer, in multilayer
In dielectric layer structure, different microstrip lines is realized in processing on the dielectric layer of different medium thickness；
As the number of plies N=4 of the metal layer, the strip line is set on metal layer described in third layer, and the circular trough is set
It is placed on metal layer described in the second layer；
As the number of plies N > 4 of the metal layer, the strip line is set to metal layer described in third layer to the N-1 layers of metal
On any one layer metal layer between layer, the circular trough is set to the gold where second layer metal layer to the strip line
Belong on any one layer metal layer between upper one layer of layer；
The signal blind hole for connecting the strip line and the non-homogeneous input microstrip line, and the connection strip line and
The non-homogeneous output microstrip line.
2. non-uniform microstrip line according to claim 1 is to strip line transition structure, which is characterized in that further include: metal
Change via hole, the metallization VIA is set to the two of the non-homogeneous input microstrip line and/or the non-homogeneous output microstrip line
Side.
3. non-uniform microstrip line according to claim 1 is to strip line transition structure, which is characterized in that further include: pad,
The pad is compensated for loading capacitance, and the pad is connected with the signal blind hole.
4. non-uniform microstrip line according to claim 1 is to strip line transition structure, which is characterized in that the circular trough is
Etching is formed on the metal layer.
5. non-uniform microstrip line according to claim 1 is to strip line transition structure, which is characterized in that described non-homogeneous defeated
The one end for entering microstrip line and the non-homogeneous output microstrip line is hanging, is tested for welding sub-miniature A connector.
6. non-uniform microstrip line according to claim 1 is to strip line transition structure, which is characterized in that the circular trough
Width is for adjusting stationary wave characteristic.
7. non-uniform microstrip line according to claim 1 is to strip line transition structure, which is characterized in that described non-homogeneous defeated
The width for entering the width of microstrip line, the width of the non-homogeneous output microstrip line and the strip line is respective for adjusting its
Characteristic impedance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610871225.3A CN106159404B (en) | 2016-09-29 | 2016-09-29 | A kind of non-uniform microstrip line is to strip line transition structure |
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| CN201610871225.3A CN106159404B (en) | 2016-09-29 | 2016-09-29 | A kind of non-uniform microstrip line is to strip line transition structure |
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| CN106159404B true CN106159404B (en) | 2019-10-11 |
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106602195B (en) * | 2016-12-21 | 2019-08-30 | 中国航空工业集团公司雷华电子技术研究所 | A kind of waveguide strip line transition structure |
| CN107634325A (en) * | 2017-08-23 | 2018-01-26 | 西安电子工程研究所 | A kind of new S/C two wavebands communication array antenna |
| CN109301654A (en) * | 2018-11-13 | 2019-02-01 | 昆山普尚电子科技有限公司 | Impedance adjuster and adjustment method |
| CN109950673B (en) * | 2019-04-02 | 2021-03-05 | 中国电子科技集团公司第三十八研究所 | Broadband strip line debugging structure with slow wave characteristic and design method thereof |
| WO2021000173A1 (en) * | 2019-06-30 | 2021-01-07 | 瑞声声学科技(深圳)有限公司 | Transmission line |
| CN112397863B (en) * | 2019-08-16 | 2022-02-22 | 稜研科技股份有限公司 | Switching structure for millimeter wave and multilayer switching structure |
| CN111540995B (en) * | 2019-12-20 | 2022-04-08 | 瑞声科技(新加坡)有限公司 | Transmission line, electronic device, and method of manufacturing the transmission line |
| CN111132458B (en) * | 2019-12-26 | 2021-06-01 | 航天科工微系统技术有限公司 | Microwave signal vertical interconnection structure and interconnection method between printed circuit boards |
| CN111769348B (en) * | 2020-06-12 | 2021-09-24 | 中国船舶重工集团公司第七二四研究所 | Transition structure of asymmetric strip line and microstrip line |
| CN112510333A (en) * | 2020-11-25 | 2021-03-16 | 安徽四创电子股份有限公司 | Multilayer board cross wiring network |
| WO2022141203A1 (en) * | 2020-12-30 | 2022-07-07 | 华为技术有限公司 | Signal transmission structure for connection of strip line and microstrip line, and antenna device |
| CN114126209B (en) * | 2021-11-05 | 2023-12-01 | 中国电子科技集团公司第二十九研究所 | LTCC microwave multilayer road network based on vertical via holes |
| CN116169451B (en) * | 2023-04-03 | 2024-05-07 | 石家庄烽瓷电子技术有限公司 | Three-dimensional packaged miniaturized power divider |
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| CN101996972A (en) * | 2009-08-12 | 2011-03-30 | 索尼公司 | Integrated circuit and conductive tape |
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|---|---|---|---|---|
| US6023211A (en) * | 1996-12-12 | 2000-02-08 | Sharp Kabushiki Kaisha | Transmission circuit using strip line in three dimensions |
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