CN106129231B - Light emitting device and manufacturing method thereof - Google Patents

Abstract

The present invention provides a light-emitting device and a manufacturing method thereof, comprising a wavelength conversion layer, at least one light-emitting unit and a reflective protective member. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light-emitting unit has two electrode pads, and the two electrode pads are located on the same side of the light-emitting unit. The light-emitting unit is configured on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protective member covers at least a portion of the light-emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light-emitting unit. Based on the above, the light-emitting device of the present invention not only does not need to use the existing supporting bracket to support and fix the light-emitting unit, but can effectively reduce the packaging thickness and manufacturing cost, and at the same time, can also effectively improve the forward light output efficiency of the light-emitting unit.

Description

Light emitting device and manufacturing method thereof

technical field

The present invention relates to a light-emitting device and a manufacturing method thereof, and in particular to a light-emitting device using a light-emitting diode as a light source and a manufacturing method thereof.

Background technique

In general, the LED package structure usually disposes the LED chip on a concave cup-shaped carrier base formed of ceramic material or metal material, so as to fix and support the LED chip. Afterwards, the packaging colloid is used to coat the LED chip, and the fabrication of the LED packaging structure is completed. At this time, the electrodes of the LED chip are located above the carrying base and inside the concave cup. However, the concave cup-shaped bearing base has a certain thickness, which prevents the thickness of the LED packaging structure from being effectively reduced, thus making the LED packaging structure unable to meet the current thinning requirements.

Contents of the invention

The invention provides a light-emitting device, which does not need to use the existing supporting bracket, can have a thinner package thickness and meets the requirement of thinning.

The present invention provides a method for manufacturing a light emitting device, which is used for manufacturing the above light emitting device.

The light-emitting device of the present invention includes a wavelength conversion layer, at least one light-emitting unit and a reflection protection member. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads, and the two electrode pads are located on the same side of the light emitting unit. The light emitting unit is arranged on the upper surface of the wavelength conversion layer and exposes two electrode pads. The reflective protection member covers at least part of the light emitting unit and part of the wavelength conversion layer, and exposes two electrode pads of the light emitting unit.

In an embodiment of the present invention, the above-mentioned light-emitting device further includes: a light-transmitting layer disposed on the wavelength conversion layer and located between the light-emitting unit and the reflective protection member.

In an embodiment of the present invention, the above-mentioned transparent layer is further disposed between the wavelength conversion layer and the light emitting unit.

In an embodiment of the present invention, the above-mentioned reflective protection member further includes a reflective surface in contact with the light emitting unit.

In an embodiment of the present invention, the reflective surface of the above-mentioned reflective protection member is a plane or a curved surface.

In an embodiment of the present invention, the above-mentioned reflective protection member also completely covers one side of the wavelength conversion layer.

In an embodiment of the present invention, a bottom surface of the above-mentioned reflective protection member and a lower surface of the wavelength conversion layer form a plane.

In an embodiment of the present invention, the above-mentioned reflective protection member further covers at least part of one side of the wavelength conversion layer.

In an embodiment of the present invention, the side surface of the part of the wavelength conversion layer not covered by the reflection protection member and the side surface of the reflection protection member form a side plane of the light emitting device.

In an embodiment of the present invention, the above-mentioned wavelength conversion layer further includes a first exposed side portion and a second exposed side portion not covered by the reflective protection member. The first exposed side is not parallel to the second exposed side, and the thickness of the wavelength conversion layer at the first exposed side is different from the thickness of the wavelength conversion layer at the second exposed side.

In an embodiment of the present invention, the above-mentioned wavelength conversion layer further includes a low-concentration fluorescent layer and a high-concentration fluorescent layer, and the high-concentration fluorescent layer is located between the low-concentration fluorescent layer and the light-emitting unit.

In an embodiment of the present invention, the above-mentioned reflective protection member fills a gap between the two electrode pads.

In an embodiment of the present invention, the above-mentioned reflection protection member completely fills the gap between the two electrode pads, and a surface of the reflection protection member is cut flush with a surface of the two electrode pads.

In an embodiment of the present invention, the above-mentioned at least one light-emitting unit is a plurality of light-emitting units, and the wavelength conversion layer has at least one groove located between the two light-emitting units.

The manufacturing method of the light-emitting device of the present invention includes the following steps. A wavelength conversion layer is provided; a plurality of light-emitting units arranged at intervals are arranged on the wavelength conversion layer, and the two electrode pads of each light-emitting unit are exposed; a plurality of grooves are formed on the wavelength conversion layer, wherein the grooves are located in the light-emitting unit Between; forming a reflective protection member on the wavelength conversion layer and between the light-emitting units and filling the trenches, wherein the reflective protection member exposes the electrode pads of the light-emitting units; and performing a cutting process along the grooves to form a plurality of light-emitting units device.

In an embodiment of the present invention, the depth of each groove mentioned above is at least half of the thickness of the wavelength conversion layer.

In an embodiment of the present invention, the manufacturing method of the above-mentioned light-emitting device further includes: after arranging the light-emitting units arranged at intervals on the wavelength conversion layer, forming a light-transmitting layer on the wavelength conversion layer.

In an embodiment of the present invention, the manufacturing method of the above-mentioned light-emitting device further includes: before disposing the light-emitting units arranged at intervals on the wavelength conversion layer, forming a light-transmitting layer on the wavelength conversion layer.

In an embodiment of the present invention, the above-mentioned reflective protection member further includes a reflective surface in contact with the light emitting unit.

In an embodiment of the present invention, the reflective surface of the above-mentioned reflective protection member is a plane or a curved surface.

In an embodiment of the present invention, the above-mentioned wavelength conversion layer further includes a low-concentration fluorescent layer and a high-concentration fluorescent layer, and the light-emitting unit is disposed on the high-concentration fluorescent layer.

Based on the above, since the reflective protector of the present invention covers the side surface of the light emitting unit, and the bottom surface of the reflective protector is aligned with the first bottom surface of the first electrode pad and the second bottom surface of the second electrode pad of the light emitting unit. Therefore, the light-emitting device of the present invention not only does not need to use the existing supporting frame to support and fix the light-emitting unit, but can effectively reduce the packaging thickness and manufacturing cost, and at the same time, can effectively improve the forward light output efficiency of the light-emitting unit.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.

Description of drawings

Fig. 1 shows a schematic diagram of a light emitting device according to an embodiment of the present invention;

Fig. 2 is a schematic diagram of a light emitting device according to another embodiment of the present invention;

Fig. 3 is a schematic diagram of a light emitting device according to another embodiment of the present invention;

Fig. 4 is a schematic diagram of a light emitting device according to another embodiment of the present invention;

Fig. 5 is a schematic diagram of a light emitting device according to another embodiment of the present invention;

Fig. 6 is a schematic diagram of a light emitting device according to another embodiment of the present invention;

Fig. 7 is a schematic diagram of a light emitting device according to another embodiment of the present invention;

Fig. 8 is a schematic diagram of a light emitting device according to another embodiment of the present invention;

Fig. 9 is a schematic diagram of a light emitting device according to another embodiment of the present invention;

10A to 10D are schematic cross-sectional views showing a manufacturing method of a light-emitting device according to an embodiment of the present invention;

11A to 11C are schematic cross-sectional views showing partial steps of a method for manufacturing a light-emitting device according to another embodiment of the present invention;

12A to 12E are schematic cross-sectional views showing a manufacturing method of a light-emitting device according to another embodiment of the present invention;

13A to 13D are schematic cross-sectional views showing partial steps of a method for manufacturing a light-emitting device according to another embodiment of the present invention;

14A to 14E are schematic cross-sectional views showing a method of manufacturing a light-emitting device according to another embodiment of the present invention;

15A to 15E are schematic cross-sectional views showing a method of manufacturing a light-emitting device according to another embodiment of the present invention;

16A to 16C are schematic cross-sectional views of light emitting devices according to various embodiments of the present invention;

17A to 17E are schematic cross-sectional views showing a manufacturing method of a light-emitting device according to an embodiment of the present invention;

18A and 18B are schematic cross-sectional views of two light-emitting devices according to two embodiments of the present invention;

19A to 19E are schematic cross-sectional views showing a method of manufacturing a light-emitting device according to another embodiment of the present invention;

FIG. 20A is a schematic perspective view of the light emitting device shown in FIG. 19E;

Figure 20B is shown as a schematic cross-sectional view along the line X-X of Figure 20A;

Fig. 21A is a schematic perspective view of a light emitting device according to another embodiment of the present invention;

21B and 21C are schematic cross-sectional views along the line X'-X' and line Y'-Y' of FIG. 21A, respectively.

Explanation of reference signs:

10: Substrate;

10a: double-sided adhesive film;

20: another substrate;

20a: UV film;

30: the first release film;

40: the second release film;

100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h, 100i, 100j, 100k, 100m, 100n, 100p, 200a, 200b, 200c, 200d: light emitting devices;

101: unit;

110a, 110b, 110c, 110c', 220: light emitting units;

112a, 112b, 112c, 222: upper surface;

113, 113', 223: first electrode pads;

113a: first bottom surface;

113b: first side surface;

114a, 114b, 114c, 224: lower surface;

115, 115', 225: second electrode pads;

115a: second bottom surface;

115b: second side surface;

116a, 116b, 116c: side surfaces;

120, 120', 120c, 120d, 120m, 120n, 120p, 240, 240a, 240b: reflective protection;

121: edge;

122, 122c, 122d: top surface;

124, 124m, 124n: bottom surface;

130d, 130c: first extended electrodes;

140d, 140c: second extended electrodes;

150: packaging adhesive layer;

150c, 150c', 230a, 230b, 230c: transparent adhesive layer;

160, 160': transparent layer;

170, 170', 170a, 210, 210': wavelength conversion adhesive layer;

171, 171a: side edges;

172, 172a, 214, 214': High-concentration fluorescent glue layer;

173: top surface;

173a: edge;

174, 174a, 212, 212', 212": low-concentration fluorescent adhesive layer;

212a, 212a', 212a": flat part;

212b: protrusion;

212b': protruding subsection;

226: side surface;

232: concave surface;

234: convex surface;

236: inclined surface;

242, 242a, 242b: reflective surfaces;

A: unit;

C: Groove;

C1, C1': Groove;

C2': the second groove;

D: depth;

E: extended electrode layer;

G: spacing;

H: height difference;

L: cutting line;

M1: the first metal layer;

M2: the second metal layer;

S: gap;

T: thickness;

T1: first thickness;

T2: second thickness;

w: width;

X-X, X'-X', Y-Y, Y'-Y': line.

Detailed ways

FIG. 1 is a schematic diagram of a light emitting device according to an embodiment of the present invention. Please refer to FIG. 1 first. In this embodiment, the light emitting device 100 a includes a light emitting unit 110 a and a reflective protection member 120 . The light emitting unit 110a has an upper surface 112a and a lower surface 114a facing each other, a side surface 116a connecting the upper surface 112a and the lower surface 114a, and a first electrode pad 113 and a second electrode located on the lower surface 114a and separated from each other. Pad 115. The reflective protection member 120 covers the side surface 116a of the light emitting unit 110a and exposes at least part of the upper surface 112a and at least part of the first bottom surface 113a of the first electrode pad 113 and at least part of the second bottom surface of the second electrode pad 115. 115a.

More specifically, as shown in FIG. 1, the upper surface 112a of the light-emitting unit 110a of this embodiment is aligned with a top surface 122 of the reflective protection member 120, and a bottom surface 124 of the reflective protection member 120 is aligned with the first electrode pad 113. A first bottom surface 113a and a second bottom surface 115a of the second electrode pad 115 are aligned, and the reflective protection member 120 can cover or expose the lower part of the light emitting unit 110a between the first electrode pad 113 and a second electrode pad 115 Surface 114a. In this embodiment, the side surface 116a of the light-emitting unit 110a is perpendicular to the upper surface 112a and the lower surface 114a, but not limited thereto, and the light-emitting unit 110a is, for example, a light-emitting diode, and the light-emitting wavelength of the light-emitting diode (including but not limited to ) between 315 nm and 780 nm, the light emitting diodes include but not limited to ultraviolet, blue, green, yellow, orange or red light emitting diodes.

The reflectivity of the reflective protector 120 is at least greater than 90%, that is to say, the reflective protector 120 of this embodiment has the characteristics of high reflectivity, wherein the material of the reflective protector 120 is a polymer material doped with highly reflective particles The highly reflective particles are, for example but not limited to, titanium dioxide (TiO ₂ ) powder, and the polymer materials are, for example and not limited to, epoxy resin or silicone resin. In addition, the material of the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110a in this embodiment is a metal material or a metal alloy, such as gold, aluminum, tin, silver, bismuth, indium or a combination thereof, but not This is the limit.

In this embodiment, the reflective protection member 120 covers the side surface 116a of the light emitting unit 110a, and exposes the first bottom surface 113a of the first electrode pad 113 and the second bottom surface 115a of the second electrode pad 115 of the light emitting unit 110a to emit light. The device 100a does not need to use the existing supporting frame to support and fix the light emitting unit 110a, which can effectively reduce the thickness of the package and the manufacturing cost. At the same time, the positive reflection of the light emitting unit 110a can be effectively improved by using the reflective protection member 120 with high reflectivity. To the light efficiency.

It must be noted here that the following embodiments continue to use the component numbers and parts of the previous embodiments, wherein the same symbols are used to represent the same or similar components, and the description of the same technical content can refer to the previous embodiments. The following embodiments I won't repeat it.

Fig. 2 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 1 and FIG. 2 at the same time. The main difference between the light emitting device 100b of this embodiment and the light emitting device 100a in FIG. As for the surface 114b, the surface area of the upper surface 112b of the light emitting unit 100b in this embodiment is larger than the surface area of the lower surface 114b, and the included angle between the side surface 116b and the lower surface 114b is, for example, between 95 degrees and 150 degrees. The outline defined by the upper surface 112b, the side surface 116b, and the lower surface 114b of the light emitting unit 110b in this embodiment presents an inverted trapezoidal shape, so that the side light output from the light emitting unit 110b can be reduced, and the reflective protection member 120 with high reflectivity can be more Further effectively improve the forward light extraction efficiency of the light emitting unit 110b.

Fig. 3 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 1 and FIG. 3 at the same time. The main difference between the light emitting device 100c of this embodiment and the light emitting device 100a in FIG. The extension electrode 140c. The first extension electrode 130c is disposed on the bottom surface 124 of the reflective protection member 120 and is electrically connected to the first electrode pad 113 . The second extension electrode 140c is disposed on the bottom surface 124 of the reflective protection member 120 and is electrically connected to the second electrode pad 115 . The first extension electrode 130c and the second extension electrode 140c are separated from each other and cover at least part of the bottom surface 124 of the reflection protection member 120 .

As shown in FIG. 3 , the first extension electrode 130 c and the second extension electrode 140 c in this embodiment are arranged to completely overlap the first electrode pad 113 and the second electrode pad 115 , and extend toward the edge of the reflection protection member 120 . Of course, in other unshown embodiments, the arrangement of the first extended electrode and the second extended electrode may also partially overlap the first electrode pad and the second electrode pad, as long as the first extended electrode and the second extended electrode are electrically connected. The arrangement connected to the first electrode pad and the second electrode pad is the protection scope of this embodiment. In addition, the first extension electrode 130c and the second extension electrode 140c in this embodiment expose part of the bottom surface 124 of the reflection protection member 120 .

In this embodiment, the materials of the first extension electrode 130c and the second extension electrode 140c may be the same as or different from the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110a. When the materials of the first extension electrode 130c and the second extension electrode 140c are respectively the same as the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110a, there may be no space between the first extension electrode 130c and the first electrode pad 113. The seam connection is an integrally formed structure, and the second extension electrode 140c and the second electrode pad 115 may be seamlessly connected, that is, an integrally formed structure. When the materials of the first extended electrode 130c and the second extended electrode 140c are different from the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110a respectively, the material of the first extended electrode 130c and the second extended electrode 140c can be, for example, Alloys of silver, gold, bismuth, tin, indium or combinations thereof.

Since the light emitting device 100c of this embodiment has the first extended electrode 130c and the second extended electrode 140c respectively electrically connected to the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110a, the light emitting device 100c can be effectively increased. The electrode contact area facilitates subsequent assembly of the light emitting device 100c with other external circuits, which can effectively improve alignment accuracy and assembly efficiency. For example, the area of the first extended electrode 130 c is larger than that of the first electrode pad 113 , and the area of the second extended electrode 140 c is larger than that of the second electrode pad 115 .

Fig. 4 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 3 and FIG. 4 at the same time. The main difference between the light emitting device 100d in this embodiment and the light emitting device 100c in FIG. 3 lies in: the edge of the first extended electrode 130d and the edge of the second extended electrode 140d Align with the edge of the reflective protector 120 .

Fig. 5 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 1 and FIG. 5 at the same time. The main difference between the light emitting device 100e in this embodiment and the light emitting device 100a in FIG. 150 is disposed on the upper surface 112a of the light emitting unit 110a to increase the light extraction rate and improve the light pattern. The encapsulation adhesive layer 150 may also extend to at least a portion of the upper surface 122 of the reflective protector 120 , and the edge of the encapsulant adhesive layer 150 may also be aligned with the edge of the reflective protector 120 . In addition, the packaging adhesive layer 150 can also be doped with at least one wavelength conversion material. The wavelength conversion material is used to convert the wavelength of at least part of the light emitted by the light emitting unit 110a into other wavelengths, and the material of the wavelength conversion material includes fluorescent light. materials, phosphorescent materials, dyes, quantum dot materials and combinations thereof, wherein the particle size of the wavelength conversion material is, for example, between 3 microns and 50 microns. In addition, the encapsulant layer 150 may also be doped with an oxide having high scattering capability, such as titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ), so as to increase light extraction efficiency.

In an embodiment of the present invention, the light-emitting unit includes but not limited to ultraviolet light, blue light, green light, yellow light, orange light or red light-emitting unit, and the wavelength conversion material includes but not limited to red, orange, orange, yellow , yellow-green or green wavelength conversion material or a combination thereof, used for wavelength conversion of part or all of the light emitted by the light-emitting unit. After the wavelength-converted light is mixed with the unconverted light, the light-emitting device emits light with a dominant wavelength in a specific range, and its light color includes, but is not limited to, red, orange, orange, and amber. , yellow, yellow-green or green, or emit white light with a specific relative color temperature. The range of the relative color temperature is, for example, between 2500K and 7000K, but not limited thereto.

Fig. 6 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 6 and FIG. 4 at the same time. The main difference between the light emitting device 100f in this embodiment and the light emitting device 100d in FIG. 150 is disposed on the upper surface 112a of the light emitting unit 110a to increase the light extraction rate and improve the light pattern. The encapsulating adhesive layer 150 can also extend to at least part of the upper surface 122 of the reflective protector 120, and the edge of the encapsulant adhesive layer 150 can also be aligned with the edge of the reflective protector 120. In addition, the encapsulating adhesive layer 150 can also be doped with At least one wavelength conversion material, the wavelength conversion material is used to convert the wavelength of at least part of the light emitted by the light emitting unit 110a into other wavelengths, and the material of the wavelength conversion material includes fluorescent materials, phosphorescent materials, dyes, quantum dot materials and combination, wherein the particle size of the wavelength conversion material is, for example, between 3 microns and 50 microns. In addition, the encapsulant layer 150 may also be doped with an oxide having high scattering capability, such as titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ), so as to increase light extraction efficiency.

It should be noted that, in the embodiment shown in FIG. 4 and FIG. 6, the edge of the first extended electrode 130d and the edge of the second extended electrode 140d are aligned with the edge of the reflective protection member 120. This design can not only expand the electrode contact area, and in the manufacturing process, the reflective protection member 120 can encapsulate a plurality of spaced apart light emitting units 110a at the same time, and then form a patterned metal layer to form the first extended electrode 130d and the second extended electrode 140d respectively, and then perform cutting to make The edge of the first extension electrode 130d and the edge of the second extension electrode 140d of each light emitting device 100f are aligned with the edge of the reflective protection member 120, which can effectively save the process time.

Fig. 7 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 7 and FIG. 5 at the same time. The main difference between the light emitting device 100g in this embodiment and the light emitting device 100e in FIG. On the layer 150, the light transmittance of the light-transmitting layer 160 is, for example, greater than 50%. In this embodiment, the material of the light-transmitting layer 160 is, for example, glass, ceramics, resin, acrylic, or silica gel. The luminous flux and the light extraction rate can also effectively protect the light-emitting unit 110 a from being attacked by external moisture and oxygen.

Fig. 8 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 8 and FIG. 7 at the same time. The main difference between the light emitting device 100h in this embodiment and the light emitting device 100g in FIG. between the upper surface 110a of the top surface 110a and the encapsulation adhesive layer 150 .

Fig. 9 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 9 and FIG. 6 at the same time. The main difference between the light emitting device 100i in this embodiment and the light emitting device 100f in FIG. On the layer 150, the light transmittance of the light-transmitting layer 160 is, for example, greater than 50%. In this embodiment, the material of the light-transmitting layer 160 is, for example, glass, ceramics, resin, acrylic, or silica gel. The luminous flux and the light extraction rate can also effectively protect the light-emitting unit 110 a from being attacked by external moisture and oxygen.

The following will take the light-emitting devices 100a, 100g, 100d, and 100i in FIGS. 1, 7, 4, and 9 as examples, and cooperate with 10A to 10D, 11A to 11C, 12A to 12E, and 13A respectively. Referring to FIG. 13D , the fabrication method of the light emitting device of the present invention will be described in detail.

10A to 10D are schematic cross-sectional views showing a method of manufacturing a light emitting device according to an embodiment of the present invention. First, referring to FIG. 10A, a plurality of light emitting units 110a are disposed on a substrate 10, wherein each light emitting unit 110a has an upper surface 112a and a lower surface 114a opposite to each other, and a side surface 116a connecting the upper surface 112a and the lower surface 114a. And the first electrode pad 113 and the second electrode pad 115 are located on the lower surface 114a and separated from each other. The first electrode pad 113 and the second electrode pad 115 of each light emitting unit 110 a are disposed on the substrate 10 . That is to say, the light-emitting surface of the light-emitting unit 110 a , that is, the upper surface 112 a is relatively far away from the substrate 10 . In this embodiment, the material of the substrate 10 is, for example, stainless steel, ceramics or other non-conductive materials. The light-emitting unit 110a is, for example, a light-emitting diode. The light-emitting wavelength of the light-emitting diode (including but not limited to) is between 315 nm and 780 nm. The light-emitting diode includes but not limited to ultraviolet light, blue light, green light, yellow light, orange light or red light. light emitting diodes.

Next, referring to FIG. 10B , a reflective protection member 120 ′ is formed on the substrate 10 , wherein the reflective protection member 120 ′ covers each light emitting unit 110 a. That is to say, the reflective protection member 120 ′ completely and directly covers the upper surface 112 a , the lower surface 114 a and the side surface 116 a of the light emitting unit 110 a, and fills the gap between the first electrode pad 113 and the second electrode pad 115 . Here, the reflectivity of the reflective protector 120' is at least greater than 90%, that is to say, the reflective protector 120' of this embodiment may have the characteristics of high reflectivity, wherein the material of the reflective protector 120' includes a highly doped The polymer material of the reflective particles is, for example but not limited to, titanium dioxide (TiO ₂ ) powder, and the polymer material is, for example but not limited to, epoxy resin or silicone resin.

Next, referring to FIG. 10C , part of the reflective protector 120' is removed to form a reflective protector 120, wherein the reflective protector 120 exposes at least part of the upper surface 112a of each light emitting unit 110a. At this time, the upper surface 112 a of each light emitting unit 110 a may be aligned with the top surface 122 of the reflective protection member 120 . Here, the method of removing part of the reflective protection member 120' includes, for example, a grinding method or a polishing method.

Afterwards, referring to FIG. 10D , a cutting process is performed to cut the reflective protection member 120 along the cutting line L to form a plurality of separate light emitting devices 100a, wherein each light emitting device 100a has at least one light emitting unit 110a and a reflective light emitting device 100a respectively. The protection member 120, the reflective protection member 120 covers the side surface 116a of the light emitting unit 110a and exposes at least part of the upper surface 112a thereof.

Finally, please refer to FIG. 10D again, remove the substrate 10 to expose the bottom surface 124 of the reflective protection member 120 of each light emitting device 100a, and expose at least part of the first bottom surface 113a of the first electrode pad 113 of each light emitting device 100a And at least part of the second bottom surface 115 a of the second electrode pad 115 .

11A to 11C are schematic cross-sectional views showing partial steps of a method for manufacturing a light emitting device according to another embodiment of the present invention. The main difference between the manufacturing method of the light-emitting device of this embodiment and the above-mentioned light-emitting device in FIGS. 10A to 10D is: between the steps of FIG. 10C and FIG. After 120 ′, and before performing the cutting process, referring to FIG. 11A , an encapsulant layer 150 is formed on the light emitting unit 110 a and the reflective protection member 120 to increase the light extraction rate and improve the light pattern. Here, the encapsulant layer 150 covers the upper surface 112 a of the light emitting unit 110 a and the top surface 122 of the reflective protection member 120 , and the encapsulant layer 150 may also be doped with at least one wavelength conversion material. For the description of the wavelength conversion material, please refer to the foregoing embodiments. In addition, the encapsulant layer 150 may also be doped with an oxide having high scattering capability, such as titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ), so as to increase light extraction efficiency.

Next, please refer to FIG. 11B , a transparent layer 160 is formed on the light emitting unit 110 a and the reflective protection member 120 , wherein the transparent layer 160 is located on the encapsulation layer 150 and covers the encapsulation layer 150 . For example, the light transmittance of the transparent layer 160 is greater than 50%. In this embodiment, the material of the light-transmitting layer 160 is, for example, glass, ceramics, resin, acrylic, or silica gel. The light emitting unit seals the luminous flux and the light extraction rate of the light structure 100g, and can also effectively protect the light emitting unit 110a from being attacked by external moisture and oxygen.

Afterwards, referring to FIG. 11C , a cutting process is performed to cut the transparent layer 160 , the encapsulant layer 150 and the reflective protection member 120 along the cutting line L to form a plurality of light emitting devices 100 g separated from each other. Finally, please refer to FIG. 11C again, remove the substrate 10 to expose the bottom surface 124 of the reflective protection member 120 of each light emitting device 100g, wherein the bottom surface 124 of the reflective protection member 120 of each light emitting device 100g exposes the first electrode pad 113 At least part of the first bottom surface 113a of the second electrode pad 115 and at least part of the second bottom surface 115a of the second electrode pad 115 . In another embodiment of the present invention, the substrate 10 may also be removed first and then a cutting process is performed.

12A to 12E are schematic cross-sectional views illustrating a method of manufacturing a light emitting device according to another embodiment of the present invention. Please refer to FIG. 12A first. The main difference between the manufacturing method of the light emitting device of this embodiment and the manufacturing method of the light emitting device in FIGS. 10A to 10D is: please refer to FIG. The substrate 10 is contacted by the first electrode pad 113 and the second electrode pad 115 , but the substrate 10 is contacted by its upper surface 112 a.

Next, referring to FIG. 12B , a reflective protection member 120' is formed on the substrate, wherein the reflective protection member covers each light emitting unit 110a.

Next, please refer to FIG. 12C , remove part of the reflective protection member 120 ′ to form the reflective protection member 120, wherein the reflective protection member 120 exposes at least part of the first bottom surface 113a and the first electrode pad 113 of each light emitting unit 110a. At least part of the second bottom surface 115 a of the second electrode pad 115 .

Next, please refer to FIG. 12D , a patterned metal layer is formed as the extended electrode layer E on the first bottom surface 113a of the first electrode pad 113 and on the second bottom surface 115a of the second electrode pad 115 of each light emitting unit 110a. Here, the method of forming the patterned metal layer is, for example, evaporation method, sputtering method, electroplating method or electroless plating method, and photomask etching method.

Next, referring to FIG. 12E , a cutting process is performed to cut the extended electrode layer E and the reflective protection member 120 along the cutting line to form a plurality of light emitting devices 100d separated from each other. Each light emitting device 100d has at least one light emitting unit 110a, a reflective protection member 120 covering at least the side surface 116a of the light emitting unit 110a, a first extension electrode 130d directly contacting the first electrode pad 113, and a first extending electrode 130d directly contacting the second electrode pad 115 The second extension electrode 140d. The first extension electrode 130d and the second extension electrode 140d are separated from each other and expose at least part of the bottom surface 124 of the reflection protection member 120 . At this time, the area of the first extension electrode 130d may be larger than the area of the first electrode pad 113 , and the area of the second extension electrode 140d may be larger than the area of the second electrode pad 115 . The edge of the first extension electrode 130d and the edge of the second extension electrode 140d are aligned with the edge of the reflection protection member 120 .

Finally, please refer to FIG. 12E again, remove the substrate 10 to expose the top surface 122 of the reflective protection member 120 of each light emitting device 100d and the upper surface 112a of the light emitting unit 110a, wherein the reflective protection member 120 of each light emitting device 100g The top surface 122 is aligned with the upper surface 112a of the light emitting unit 110a. In another embodiment of the present invention, the substrate 10 may also be removed first and then a cutting process is performed.

13A to 13D are schematic cross-sectional views showing partial steps of a method for manufacturing a light emitting device according to another embodiment of the present invention. The main difference between the manufacturing method of the light-emitting device of this embodiment and the above-mentioned light-emitting device in FIGS. 12A to 12E is: between the steps in FIG. 12D and FIG. , and before performing the cutting process, referring to FIG. 13A , another substrate 20 is provided and disposed on the extension electrode layer E. Referring to FIG. Here, the material of the other substrate 20 is, for example, stainless steel, ceramics or other non-conductive materials. Next, please refer to FIG. 13A again, after another substrate 20 is provided, the substrate 10 is removed to expose the top surface 122 of the reflective protector 120 and the upper surface 112a of the light emitting unit 110a, wherein the upper surface 112a of each light emitting unit 110a It is aligned with the top surface 122 of the reflective protection member 120 .

Next, referring to FIG. 13B , an encapsulation layer 150 is formed on the light emitting unit 110 a and the reflective protection member 120 to increase the light extraction rate and improve the light pattern. Here, the encapsulant layer 150 covers the upper surface 112 a of the light emitting unit 110 a and the top surface 122 of the reflective protection member 120 , and the encapsulant layer 150 may also be doped with at least one wavelength conversion material. For the description of the wavelength conversion material, please refer to the foregoing embodiments. In addition, the encapsulant layer 150 may also be doped with an oxide having high scattering capability, such as titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ), so as to increase light extraction efficiency.

Next, please refer to FIG. 13C , forming a light-transmitting layer 160 on the light-emitting unit 110 a and the reflective protection member 120 , wherein the light-transmitting layer 160 is located on the packaging adhesive layer 150 and covers the packaging adhesive layer 150 . For example, the light transmittance of the transparent layer 160 is greater than 50%. Here, the material of the light-transmitting layer 160 is, for example, glass, ceramics, resin, acrylic, or silica gel. The luminous flux and light extraction rate of the light structure 100i can also effectively protect the light emitting unit 110a from being attacked by external moisture and oxygen.

Afterwards, referring to FIG. 13D , a cutting process is performed to cut the transparent layer 160 , the encapsulant layer 150 , the reflective protection member 120 and the extended electrode layer E along the cutting line L to form a plurality of separated light emitting devices 100i. Finally, referring to FIG. 13D again, another substrate 20 is removed to expose the first extension electrode 130d and the second extension electrode 140d of each light emitting device 100i. In another embodiment of the present invention, the substrate 20 may also be removed first and then a cutting procedure is performed.

14A to 14E are schematic cross-sectional views showing a method of manufacturing a light emitting device according to another embodiment of the present invention. Referring to FIG. 14A , a wavelength conversion adhesive layer 170 is provided, wherein the wavelength conversion adhesive layer 170 includes a low-concentration fluorescent adhesive layer 174 and a high-concentration fluorescent adhesive layer 172 on the low-concentration fluorescent adhesive layer 174 . Here, the step of forming the wavelength conversion adhesive layer 170 is, for example, firstly mixing the dopant with the colloid (that is, uniformly mixing the liquid or molten colloid with the wavelength conversion material, the wavelength conversion material is, for example, phosphor powder, but not as a limit), to form the wavelength conversion adhesive layer 170, and then let the wavelength conversion adhesive layer 170 stand for a period of time, such as after 24 hours of sedimentation, to form a high-concentration fluorescent adhesive layer 172 and a low-concentration fluorescent adhesive layer 174 separated from the upper and lower layers. That is to say, the wavelength conversion layer 170 of this embodiment is illustrated by using two adhesive layers as an example. Of course, in other embodiments, referring to FIG. 14A', a wavelength conversion adhesive layer 170' is provided, wherein the wavelength conversion adhesive layer 170' is a single adhesive layer, which still belongs to the protection scope of the present invention.

Next, referring to FIG. 14B , a plurality of light-emitting units 110c arranged at intervals are disposed on the wavelength conversion adhesive layer 170, wherein each light-emitting unit 110c has an upper surface 112c and a lower surface 114c opposite to each other, and a connection between the upper surface 112c and the lower surface 114c. The side surface 116c of the lower surface 114c and a first electrode pad 113 and a second electrode pad 115 located on the lower surface 114c and separated from each other, while the upper surface 112c of the light emitting unit 110c is located in the high-concentration fluorescent glue of the wavelength conversion glue layer 170 on layer 172. Next, a plurality of light-transmitting adhesive layers 150c made of light-transmitting colloid are respectively formed on the wavelength conversion adhesive layer 170 and extend to the side surface 116c of the light-emitting unit 110c, wherein the light-transmitting adhesive layer 150c does not completely cover the light-emitting unit 110c side surface 116c, but as shown in FIG. 14B, the light-transmitting adhesive layer 150c has a curvature slope, and the closer to the upper surface 112c of the light-emitting unit 110c, that is, closer to the wavelength conversion adhesive layer 170, the thicker the light-transmitting adhesive layer 150c is. thick. Here, the purpose of the transparent adhesive layer 150c is to fix the position of the light emitting unit 110c.

It should be noted that, in other embodiments, please refer to FIG. 14B′, before disposing the light-emitting units 110c arranged at intervals on the wavelength conversion adhesive layer 170, an uncured light-transmitting layer whose material includes a light-transmitting adhesive can also be formed. The glue layer 150c′ is on the wavelength conversion glue layer 170 . After the light-emitting units 110c are arranged at intervals on the wavelength conversion adhesive layer 170, the light-transmitting adhesive layer 150c' can be extended and disposed between the light-emitting units 110c and the high-concentration fluorescent adhesive layer 172.

Next, please refer to FIG. 14B and FIG. 14C at the same time. After the light-transmitting adhesive layer 150c' is cured, a first cutting process is performed to cut the wavelength conversion adhesive layer 170 to form a plurality of separated units 101, wherein each unit 101 respectively has at least one light emitting unit 110c and a wavelength conversion adhesive layer 170 disposed on the upper surface 112c of the light emitting unit 110c, and the two side edges 171 of the wavelength conversion adhesive layer 170 of each unit 101 extend to the side surface 116c of the light emitting unit 110c outside. Next, please refer to FIG. 14C again, disposing the units 101 arranged at intervals on a substrate 10 . In this embodiment, the material of the substrate 10 is, for example, stainless steel, ceramics or other non-conductive materials, which are not limited here.

After that, referring to FIG. 14D , a reflective protection member 120 c is formed on the substrate 10 and covers the side surface 116 c of the light emitting unit 110 c of each unit 101 and the edge 171 of the wavelength conversion adhesive layer 170 . Here, the reflective protection member 120c is formed, for example, by dispensing glue, wherein the reflective protection member 120c directly covers the light-transmitting adhesive layer 150c and extends along the light-transmitting adhesive layer 150c to cover the edge of the wavelength conversion adhesive layer 170 171. The orthographic projections of the first electrode pads 113 and the second electrode pads 115 of the light emitting unit 110 c on the substrate 10 do not overlap with the orthographic projections of the reflective protection member 120 c on the substrate 10 . Here, the reflective protection member 120c is, for example, a white glue layer.

Finally, referring to FIG. 14D and FIG. 14E at the same time, a second cutting process is performed to cut the reflective protection member 120c and remove the substrate 10 to form a plurality of light emitting devices 100j separated from each other. Each light emitting device 100j respectively has at least one light emitting unit 101 and a reflective protection member 120c covering the side surface 116c of the light emitting unit 110c and the edge 171 of the wavelength conversion adhesive layer 170 . After the substrate 10 is removed, a top surface 122c of the reflective protection member 120c and a top surface 173 of the wavelength conversion adhesive layer 170 of each light emitting device 100j are exposed. In another embodiment of the present invention, the substrate 10 may also be removed first and then a cutting process is performed. So far, the fabrication of the light emitting device 100j has been completed.

In terms of structure, please refer to FIG. 14E again. The light emitting device 100j of this embodiment includes a light emitting unit 110c, a reflective protection member 120c, a transparent adhesive layer 150c and a wavelength conversion adhesive layer 170 . The wavelength conversion adhesive layer 170 is disposed on the upper surface 112c of the light-emitting unit 110c, wherein the wavelength conversion adhesive layer 170 includes a low-concentration fluorescent adhesive layer 174 and a high-concentration fluorescent adhesive layer 172, and the high-concentration fluorescent adhesive layer 172 is located on the low-concentration fluorescent adhesive layer. 174 and the light emitting unit 110c, and the edge 171 of the wavelength conversion adhesive layer 170 extends beyond the side surface 116c of the light emitting unit 110c. Here, the low-concentration fluorescent adhesive layer 174 can be used as a light-transmitting protective layer to increase the water vapor transmission path and effectively prevent water vapor from infiltrating. The light-transmitting adhesive layer 150c is disposed between the side surface 116c of the light emitting unit 110c and the reflective protection member 120c to fix the position of the light emitting unit 110c. The reflective protection member 120c of this embodiment is along the light-transmitting adhesive layer 150c covering the side surface 116c of the light-emitting unit 110c and also covers the edge 171 of the wavelength conversion adhesive layer 170, so the light-emitting device 100j of this embodiment does not need to use The existing supporting bracket is used to support and fix the light emitting unit 110c, which can effectively reduce the packaging thickness and manufacturing cost. At the same time, the forward light output efficiency of the light emitting unit 110c can also be effectively improved by using the reflective protection member 120c with high reflectivity. Here, the top surface 122c of the reflective protection member 120c is embodied to be aligned with the top surface 173 of the wavelength conversion adhesive layer 170 .

15A to 15E are schematic cross-sectional views illustrating a method of manufacturing a light emitting device according to another embodiment of the present invention. Please refer to FIG. 15A first, provide a first release film 30, then provide a wavelength conversion adhesive layer 170a on the first release film 30, the wavelength conversion adhesive layer 170a can be a single layer of adhesive layer, or multi-layer adhesive In this embodiment, the wavelength conversion adhesive layer 170a includes a low-concentration fluorescent adhesive layer 174a and a high-concentration fluorescent adhesive layer 172a on the low-concentration fluorescent adhesive layer 174a. Here, the step of forming the wavelength conversion adhesive layer 170a is, for example, to first form the wavelength conversion adhesive layer 170a by mixing dopant and colloid, and then let the wavelength conversion adhesive layer 170a stand for a period of time, such as 24 hours, to form a separated low Concentrated fluorescent glue layer 172a and high-concentrated fluorescent glue layer 174a. Here, the first release film 30 is, for example, a double-sided adhesive film.

Next, please refer to FIG. 15A again, a plurality of light-emitting units 110c arranged at intervals are arranged on the wavelength conversion adhesive layer 170A, wherein each light-emitting unit 110c has an upper surface 112c and a lower surface 114c opposite to each other, and a connecting upper surface 112c The side surface 116c of the lower surface 114c and a first electrode pad 113 and a second electrode pad 115 located on the lower surface 114c and separated from each other, while the upper surface 112c of the light emitting unit 110c is located on the high-concentration fluorescent light of the wavelength conversion adhesive layer 170a glue layer 172a. Here, two adjacent light-emitting units 110c have a distance G, and the distance G is, for example, 700 microns. Next, a plurality of light-transmitting adhesive layers 150c are respectively formed on the side surfaces 116c of the light emitting unit 110c, wherein the light-transmitting adhesive layers 150c do not completely cover the side surfaces 116c of the light emitting unit 110c, but as shown in FIG. The adhesive layer 150c has a curvature slope, and the closer to the upper surface 112c of the light emitting unit 110c, the thicker the thickness of the transparent adhesive layer 150c is. Here, the purpose of the transparent adhesive layer 150c is to fix the position of the light emitting unit 110c.

Next, please refer to FIG. 15B , a first cutting process is performed to cut the high-concentration fluorescent glue layer 172 a and part of the low-concentration fluorescent glue layer 174 a to form a plurality of grooves C. As shown in FIG. 15B , the first cutting process does not completely cut off the wavelength conversion adhesive layer 170a, but only cuts off the high-concentration fluorescent adhesive layer 172a and cuts a part of the low-concentration fluorescent adhesive layer 174a. Here, the width W of the trench C is, for example, 400 micrometers, and the depth D of the trench C is, for example, half the thickness T of the wavelength conversion adhesive layer 170 a. The thickness T of the wavelength conversion adhesive layer 170a is, for example, 140 microns, and the depth D of the groove C is, for example, 70 microns. At this time, the position of the trench C and the position of the packaging adhesive layer 150c do not interfere with each other.

Afterwards, referring to FIG. 15C , a reflective protection member 120d is formed on the low-concentration fluorescent adhesive layer 174a and covers the side surface 116c of the light emitting unit 110c, wherein the reflective protection member 120d fills the groove C and exposes the first side of the light emitting unit 110c. An electrode pad 113 and a second electrode pad 115 . Here, the reflective protection member 120d is, for example, a white glue layer.

Finally, please refer to FIG. 15D and FIG. 15E at the same time, remove the first release layer 30, and provide a second release layer 40, so that the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110c contact the second release layer. Type film 40. Here, the second release layer 40 is, for example, UV adhesive or double-sided adhesive. Next, a second cutting process is performed to cut the reflective protection member 120d and the low-concentration fluorescent glue layer 174a along the extending direction of the groove C (ie, the extending direction of the cutting line L in FIG. Separate light emitting device 100k. Each light emitting device 100k has at least one light emitting unit 110c, a wavelength conversion adhesive layer 170a disposed on the upper surface 112c of the light emitting unit 110c, and a reflective protection member 120d covering the side surface 116c of the light emitting unit 110c. In this embodiment, the wavelength conversion adhesive layer 170a includes a high-concentration fluorescent adhesive layer 172a and a low-concentration fluorescent adhesive layer 174a. Here, the edge 171a of the low-concentration fluorescent adhesive layer 174a of the wavelength conversion adhesive layer 170a is aligned with the reflection protection member. The edge 121 of 120d, and the reflective protection member 120d also covers the edge 173a of the high-concentration fluorescent glue layer 172a. The second release layer 40 is removed to complete the fabrication of the light emitting device 100k.

In terms of structure, please refer to FIG. 15E again. The light emitting device 100k of this embodiment includes a light emitting unit 110c, a reflective protection member 120d, a transparent adhesive layer 150c, and a wavelength conversion adhesive layer 170a. The wavelength conversion adhesive layer 170a is disposed on the upper surface 112c of the light-emitting unit 110c, wherein the wavelength conversion adhesive layer 170a includes a low-concentration fluorescent adhesive layer 174a and a high-concentration fluorescent adhesive layer 172a, and the high-concentration fluorescent adhesive layer 172a is located on the low-concentration fluorescent adhesive layer. 174a and the light emitting unit 110c, and the edge 171a of the wavelength conversion adhesive layer 170a extends beyond the side surface 116c of the light emitting unit 110c. Here, the low-concentration fluorescent adhesive layer 174 can be used as a light-transmitting protective layer to increase the water vapor transmission path and effectively prevent water vapor from infiltrating. The light-transmitting adhesive layer 150c is disposed between the side surface 116c of the light-emitting unit 110c and the reflective protection member 120d to fix the position of the light-emitting unit 110c. The reflective protection member 120d of this embodiment is along the light-transmitting adhesive layer 150c covering the side surface 116c of the light-emitting unit 110c and also covers the two side edges 173a of the high-concentration fluorescent adhesive layer 172a of the wavelength conversion adhesive layer 170a. The light-emitting device 100k of the embodiment does not need to use the existing supporting frame to support and fix the light-emitting unit 110c, which can effectively reduce the packaging thickness and manufacturing cost. At the same time, the forward light output efficiency of the light emitting unit 110c can also be effectively improved by using the reflective protection member 120d with high reflectivity. In addition, the low-concentration fluorescent adhesive layer 174a of the wavelength conversion adhesive layer 170a of this embodiment covers a top surface 122d of the reflective protection member 120d. That is to say, the edge 173a of the high-concentration fluorescent adhesive layer 172a and the edge 171a of the low-concentration fluorescent adhesive layer 174a of the wavelength conversion adhesive layer 170a of this embodiment are not aligned.

In other embodiments, please refer to FIG. 16A, the light emitting device 100m in this embodiment is similar to the light emitting device 100j in FIG. The gap S between the second electrode pads 114 completely covers a first side surface 113b of the first electrode pad 113 and a second side surface 115b of the second electrode pad 115, and a bottom surface 124m of the reflective protection member 120m is aligned. on the first bottom surface 113 a of the first electrode pad 113 and the second bottom surface 115 a of the second electrode pad 115 . In this way, light leakage at the bottom of the light emitting device 100m can be avoided. In addition, the reflective protection member 120m completely covers the two side edges of the wavelength conversion adhesive layer 170a. Moreover, since the reflective protection member 120m has good wrapping properties and better structural strength, the light emitting device 100m of this embodiment does not need to use the existing supporting bracket to support and fix the light emitting unit 110c, and can effectively reduce the Package thickness and fabrication cost.

Or, please refer to FIG. 16B, the light emitting device 100n of this embodiment is similar to the light emitting device 100k in FIG. 16A, the difference is that: the reflective protection member 120n of this embodiment is filled in the first electrode pad 113 and the second electrode pad The gap S between 114 is not completely filled, and the reflective protection member 120 n only covers part of the first side surface 113 b of the first electrode pad 113 and part of the second side surface 115 b of the second electrode pad 115 . In other words, there is a height difference H between a bottom surface 124n of the reflective protection member 120n and the first bottom surface 113a of the first electrode pad 113 and the second bottom surface 115a of the second electrode pad 115 . Alternatively, please refer to FIG. 16C, the light emitting device 100p of this embodiment is similar to the light emitting device 100n in FIG. The multi-layer metal layer, for example, is composed of the first metal layer M1 and the second metal layer M2, but is not limited thereto. The reflective protection member 120p completely covers the side surfaces of the first metal layer M1 of the first electrode pad 113' and the second electrode pad 115, but does not completely cover the second metal layer of the first electrode pad 113' and the second electrode pad 115'. The side surface of layer M2. In short, the first electrode pads 113, 113' and the second electrode pads 115, 115' of the light-emitting units 110c, 110c' of the light-emitting devices 100m, 100n, and 100p can be a single metal layer or multiple metal layers. Not limited.

17A to 17E are schematic cross-sectional views showing a method of manufacturing a light emitting device according to an embodiment of the present invention. Regarding the manufacturing method of the light-emitting device of this embodiment, first, please refer to FIG. 17A, a wavelength conversion adhesive layer 210 is provided. The wavelength conversion adhesive layer 210 can be a single layer of adhesive layer or multiple layers of adhesive layers. The wavelength in this embodiment The conversion adhesive layer 210 includes a low-concentration fluorescent adhesive layer 212 and a high-concentration fluorescent adhesive layer 214 on the low-concentration fluorescent adhesive layer 212 . Here, the step of forming the wavelength conversion adhesive layer 210 is, for example, to uniformly mix the wavelength conversion adhesive material layer ( not shown) laid on a release film (not shown), and then let the wavelength conversion adhesive material layer stand for a period of time, such as 24 hours later, due to the density difference between the fluorescent powder and the silica gel, a low-concentration fluorescence with separation is formed. The wavelength conversion adhesive layer 210 of the adhesive layer 212 and a high-concentration fluorescent adhesive layer 214, wherein the high-concentration fluorescent adhesive layer 214 will be deposited below the low-concentration fluorescent adhesive layer 212, and the high-concentration fluorescent adhesive layer 214 is yellow, for example, and the low-concentration fluorescent adhesive layer 214 The fluorescent adhesive layer 212 is, for example, transparent. The thickness of the low-concentration fluorescent adhesive layer 212 is preferably greater than the thickness of the high-concentration fluorescent adhesive layer 214. In one embodiment, the thickness ratio can be between 1 and 200, but not This is the limit.

Next, please refer to FIG. 17A again, a double-sided adhesive film 10a is provided, and the low-concentration fluorescent adhesive layer 212 of the wavelength conversion adhesive layer 210 is disposed on the double-sided adhesive film 10a, so as to fix the wavelength conversion adhesive layer through the double-sided adhesive film 10a 210 location. Next, a first cutting process is performed to cut from the high-concentration fluorescent glue layer 214 to a part of the low-concentration fluorescent glue layer 212 to form a plurality of grooves C1. Here, the depth of each groove C1 is at least half of the thickness of the wavelength conversion adhesive layer 210 . For example, if the thickness of the wavelength conversion adhesive layer 210 is 240 microns, the depth of the groove C1 is, for example, 200 microns. At this time, the groove C1 can divide the low-concentration fluorescent adhesive layer 212 of the wavelength conversion adhesive layer 210 into a flat plate portion 212a and a protruding portion 212b on the flat plate portion 212a, while the high-concentration fluorescent adhesive layer 214 is located on the protruding portion 212b. superior.

Next, please refer to FIG. 17B , a plurality of light-emitting units 220 arranged at intervals are arranged on the wavelength conversion adhesive layer 210, wherein each light-emitting unit 220 has an upper surface 222 and a lower surface 224 opposite to each other, and a connection between the upper surface 222 and the lower surface 224. The side surface 226 of the lower surface 224 and a first electrode pad 223 and a second electrode pad 225 located on the lower surface 224 and separated from each other. The upper surface 222 of the light emitting unit 220 is located on the high-concentration fluorescent adhesive layer 214 of the wavelength conversion adhesive layer 210 to increase the light extraction rate and improve the light pattern. The groove C1 divides the light emitting unit 220 into a plurality of units A, and in this embodiment, each unit A includes at least two light emitting units 220 (two light emitting units 220 are schematically shown in FIG. 17B ). Each light-emitting unit 220 is, for example, a light-emitting diode chip with a light-emitting wavelength between 315 nanometers and 780 nanometers, and the light-emitting diode chip includes but is not limited to ultraviolet, blue, green, yellow, orange or red light-emitting diodes chip.

Next, please refer to FIG. 17B again, forming a transparent adhesive layer 230 a on the wavelength conversion adhesive layer 210 and extending on the side surface 226 of the light emitting unit 220 . As shown in FIG. 17B , the light-transmitting adhesive layer 230a gradually thickens from the lower surface 224 to the upper surface 222 of each light-emitting unit 220 , and the light-transmitting adhesive layer 230a has a concave surface 232 relative to the side surface 226 of the light-emitting unit 220 , but not limited to this. Here, the purpose of the light-transmitting adhesive layer 230a is not only to fix the position of the light-emitting unit 220, but also to increase the light extraction effect on the side of the chip because the light-transmitting adhesive layer 230a is a light-transmitting material with a refractive index greater than 1.

Next, please refer to FIG. 17C , a reflective protection member 240 is formed between the light emitting units 220 and fills the groove C1, wherein the reflective protection member 240 is formed on the wavelength conversion adhesive layer 210 and covers each unit A and fills the groove Slot C1. The reflective protection member 240 exposes the lower surface 224 of each light emitting unit 220 , the first electrode pad 223 and the second electrode pad 225 . Here, the reflectivity of the reflection protection member 240 is at least greater than 90%, and the reflection protection member 240 is, for example, a white glue layer. The reflective protection member 240 is formed, for example, by dispensing glue, wherein the reflective protection member 240 directly covers the light-transmitting adhesive layer 230a and extends along the light-transmitting adhesive layer 230a to cover and fill the edge of the high-concentration fluorescent adhesive layer 214. Groove C1. At this time, the orthographic projections of the first electrode pads 223 and the second electrode pads 225 of the light emitting unit 220 on the double-sided adhesive film 10a do not overlap with the orthographic projections of the reflective protection member 240 on the double-sided adhesive film 10a.

Next, please refer to FIG. 17C , a second cutting process is performed to form a plurality of separated light emitting devices 200 a from the reflective protection member 240 along the groove C1 to penetrate the low-concentration fluorescent glue layer 212 . At this time, as shown in FIG. 17C , the wavelength conversion adhesive layer 210 in contact with the two light-emitting units 220 in each unit A is continuous, which means that these light-emitting units 220 have the same light-emitting surface, so the light emitted by the light-emitting units 220 The light can be guided through the transparent low-concentration fluorescent adhesive layer 212 , so that the light emitting device 200 a of this embodiment has better uniformity of light emission.

After that, please refer to FIG. 17C and FIG. 17D at the same time. After the second cutting procedure, a film turning procedure is required. Firstly, a UV adhesive film 20a is provided on the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220 to first fix the relative positions of these light emitting devices 200a. Next, the double-sided adhesive film 10 a is removed to expose the low-concentration fluorescent adhesive layer 212 of the wavelength conversion adhesive layer 210 . Finally, referring to FIG. 17E , the UV adhesive film 20 a is removed to expose the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220 . So far, the fabrication of the light emitting device 200a has been completed. It should be noted that, for convenience of description, FIG. 17E only schematically shows one light emitting device 200a.

In terms of structure, please refer to FIG. 17E again. The light emitting device 200a includes a plurality of light emitting units 220 (two light emitting units 220 are schematically shown in FIG. 17E ), a wavelength conversion adhesive layer 210 and a reflective protection member 240 . Each light emitting unit 220 has an upper surface 222 and a lower surface 224 opposite to each other, a side surface 226 connecting the upper surface 222 and the lower surface 224, and a first electrode pad 223 and a first electrode pad 223 separated from each other on the lower surface 224. Two electrode pads 225 . The wavelength conversion adhesive layer 210 is disposed on the upper surface 222 of the light emitting unit 220 , and the wavelength conversion adhesive layer 210 includes a low concentration fluorescent adhesive layer 212 and a high concentration fluorescent adhesive layer 214 . The low-concentration fluorescent adhesive layer 212 has a flat portion 212a and a protruding portion 212b on the flat portion 212a. The high-concentration fluorescent adhesive layer 214 is disposed between the upper surface 222 and the protruding portion 212 b , wherein the high-concentration fluorescent adhesive layer 214 covers the protruding portion 212 b and contacts the upper surface 222 of the light emitting unit 220 . The light emitting units 220 are arranged at intervals and expose part of the wavelength conversion glue layer 210 . The reflective protection member 240 covers the side surface 226 of each light emitting unit 220 and covers the wavelength conversion adhesive layer 210 exposed by the light emitting unit 220 . The reflective protection member 240 exposes the lower surface 224 of each light emitting unit 220 , the first electrode pad 223 and the second electrode pad 225 . Edges of the reflective protection member 240 are aligned with edges of the flat portion 212 a of the low-concentration fluorescent glue layer 212 .

Since these light-emitting units 220 in the light-emitting device 200a of this embodiment are only in contact with one wavelength conversion adhesive layer 210, it means that these light-emitting units 220 have the same light-emitting surface, and the edge of the low-concentration fluorescent adhesive layer 212 is in contact with the reflection protection member 240 The edges are trimmed. Therefore, the light emitted by the light-emitting unit 220 is guided by the low-concentration fluorescent adhesive layer 212 , so that the light-emitting device 200 a of this embodiment can have a larger light-emitting area and better light-emitting uniformity. In addition, the reflective protector 240 covers the side surface 226 of the light emitting unit 220 , and the reflective protector 240 exposes the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220 . Therefore, the light-emitting device 200a of this embodiment does not need to use the existing supporting frame to support and fix the light-emitting unit 220, which can effectively reduce the packaging thickness and manufacturing cost, and can also effectively improve the forward light output efficiency of the light-emitting unit 220.

It is worth mentioning that this embodiment does not limit the structure of the light-transmitting adhesive layer 230a, although the light-transmitting adhesive layer 230a shown in FIG. 232. In other words, the reflective protection member 240 further includes a reflective surface 242 in contact with the light emitting unit 220 , and the reflective surface 242 is embodied as a curved surface. However, in other embodiments, please refer to FIG. 18A, the light emitting device 200b of this embodiment is similar to the light emitting device 200a in FIG. 226 has a convex surface 234 , which can effectively increase the lateral light emission of the light emitting unit 220 , and also increase the light emission area of the light emitting device 200 b by cooperating with the configuration of the wavelength conversion adhesive layer 210 . In other words, the reflective surface 242a of the reflective protector 240a is embodied as a curved surface. Or, please refer to FIG. 18B, the light emitting device 200c of this embodiment is similar to the light emitting device 200a in FIG. 236. In other words, the reflective surface 242b of the reflective protector 240b is embodied as a plane.

It must be noted here that the following embodiments continue to use the component numbers and parts of the previous embodiments, wherein the same symbols are used to represent the same or similar components, and the description of the same technical content can refer to the previous embodiments. The following embodiments I won't repeat it.

19A to 19E are schematic cross-sectional views showing a method of manufacturing a light emitting device according to another embodiment of the present invention. The main difference between the fabrication method of the light-emitting device 200d in this embodiment and the fabrication method of the light-emitting device 200a in FIGS. The high-concentration fluorescent adhesive layer 214' is cut to part of the second groove C2' of the low-concentration fluorescent adhesive layer 212'. As shown in FIG. 19A, the positions of the grooves C1' and the second grooves C2' are staggered, wherein the depth of each groove C1' is at least half of the thickness of the wavelength conversion adhesive layer 210', and each second The depth of trench C2' is the same as that of each trench C1'. For example, if the thickness of the wavelength conversion adhesive layer 210' is 240 microns, the depths of the trench C1' and the second trench C2' are, for example, 200 microns, but not limited thereto. At this time, the plate portion 212a' of the low-concentration fluorescent adhesive layer 212' has a thickness T, preferably, the thickness T is between 20 microns and 50 microns, for example. The second groove C2' divides the protruding portion of the low-concentration fluorescent adhesive layer 212' in the wavelength conversion adhesive layer 210' into two protruding sub-parts 212b', and the high-concentration fluorescent adhesive layer 214' is located on these protruding sub-parts 212b' .

Next, please refer to FIG. 19B , the light emitting units 220 arranged at intervals are arranged on the wavelength conversion adhesive layer 210', wherein the second groove C2' is located between the two light emitting units 220 in each light emitting unit A, and emits light. The units 220 are respectively disposed on the protruding sub-parts 212b', and the upper surface 222 of the light emitting unit 220 directly contacts the high-concentration fluorescent glue layer 214'. Preferably, the ratio of the length of each protruding subsection 212b' to the length of the corresponding light-emitting unit 220 is greater than 1 and less than 1.35, that is, the edge of the protruding subsection 212b' of the low-concentration fluorescent glue layer 212' is at Outside the edge of the light-emitting unit 220 , and the edge of the high-concentration fluorescent adhesive layer 214 ′ also extends outside the edge of the light-emitting unit 220 , which can effectively increase the light-emitting area of the light-emitting unit 220 . Next, a light-transmitting adhesive layer 230a is formed on the side surface 226 of the light emitting unit 220, wherein the light-transmitting adhesive layer 230a is only disposed on the side surface 226 of the light emitting unit 220 and extends to the high-concentration fluorescent light of the wavelength conversion adhesive layer 210'. On the adhesive layer 214', it is not extended on the low-concentration fluorescent adhesive layer 212'.

Next, the same as the above-mentioned steps in FIG. 17C, FIG. 17D and FIG. 17E, please refer to FIG. 19C first, that is, form a reflection protection member 240 on the wavelength conversion adhesive layer 210' and cover each unit A and fill the grooves C1' and Next, a second cutting process is performed on the second trench C2 ′ to form a plurality of separated light emitting devices 200 d from the reflective protection member 240 along the trench C1 ′ and through the low-concentration fluorescent adhesive layer 212 ′. Next, please refer to FIG. 19C and FIG. 19D at the same time. After the second cutting process, a film turning process needs to be performed. Firstly, the UV adhesive film 20a is provided on the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220 to first fix the relative positions of these light emitting devices 200a. Next, the double-sided adhesive film 10a is removed to expose the low-concentration fluorescent adhesive layer 212' of the wavelength conversion adhesive layer 210'. Finally, referring to FIG. 19E , the UV adhesive film 20 a is removed to expose the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220 . So far, the fabrication of the light emitting device 200d has been completed. It should be noted that, for convenience of description, FIG. 19E only schematically shows one light emitting device 200d.

Please refer to FIG. 19E , FIG. 20A and FIG. 20B at the same time. It should be noted that FIG. 19E shows a schematic cross-sectional view along the line Y-Y in FIG. 20A . The light emitting device 200d of this embodiment is similar to the light emitting device 200a shown in FIG. The second groove C2' extends from the high-concentration fluorescent glue layer 214' to a part of the low-concentration fluorescent glue layer 212'. That is to say, the two light-emitting units 220 are arranged on a continuous wavelength conversion adhesive layer 210 ′, so the light-emitting units 220 have the same light-emitting surface, and the edge of the low-concentration fluorescent adhesive layer 212 ′ and the edge of the reflective protection member 240 Qie Qi. Therefore, the light emitted by the light-emitting unit 220 is guided by the low-concentration fluorescent adhesive layer 212', so that the light-emitting device 200d of this embodiment can have a larger light-emitting area and better light-emitting uniformity.

Especially, when performing the first cutting procedure, the depths cut in the direction of line X-X and the direction of line Y-Y in FIG. 20A are substantially the same. That is to say, please refer to FIG. 20B, on the cross-sectional view of the line X-X direction, the flat portion 212a' of the low-concentration fluorescent glue layer 212' has a thickness T, please refer to FIG. 19E, and on the cross-sectional view of the line Y-Y direction, the low-concentration fluorescent adhesive layer The flat portion 212a' of the fluorescent adhesive layer 212' also has a thickness T. As shown in FIG. Preferably, the thickness T is, for example, between 20 microns and 50 microns.

Certainly, in other embodiments, when performing the first cutting process, the flat plate portion 212a' of the low-concentration fluorescent adhesive layer 212' may also have different thicknesses when cutting in different directions. Fig. 21A is a schematic perspective view of a light emitting device according to another embodiment of the present invention. 21B and 21C are schematic cross-sectional views along the line X'-X' and line Y'-Y' of FIG. 21A, respectively. Please refer to FIG. 21A, FIG. 21B and FIG. 21C at the same time. When performing the first cutting procedure, the cutting depths in the direction of the line X'-X' and the direction of the line Y'-Y' in FIG. 21A are different, resulting in wavelength conversion The adhesive layer 210 ′ also includes a first exposed side portion and a second exposed side portion not covered by the reflective protection member 240 , the first exposed side portion and the second exposed side portion are not parallel, and the wavelength conversion adhesive layer 210 'The thickness at the first exposed side is different from the thickness of the wavelength conversion adhesive layer 210' at the second exposed side. In detail, the flat part 212a" of the low-concentration fluorescent glue layer 212" has a first thickness T1 in the direction of the line X'-X', and the flat part 212a" of the low-concentration fluorescent glue layer 212" has a thickness T1 in the direction of Y'-X'. The Y' direction D2 has a second thickness T2, and the first thickness T1 is different from the second thickness T2. Preferably, the first thickness T1 is, for example, between 50 micrometers and 200 micrometers, and the second thickness T2 is, for example, between 20 micrometers and 50 micrometers.

Since the flat portion 212a" of the low-concentration fluorescent glue layer 212" in this embodiment has a different first thickness T1 and a second thickness T2 in the direction of X'-X' and the direction of Y'-Y', respectively, It can effectively reduce the brightness decrease caused by the dark band between two adjacent light emitting units 220, and further improve the light emitting uniformity of the light emitting device 200e. In addition, it is worth mentioning that, taking the direction of the line Y'-Y' as an example, when the thickness T2 of the flat part 212a" of the low-concentration fluorescent glue layer 212"' is increased from 0.04 millimeters (mm) to 0.2 millimeters ( mm), the light emitting angle of the light emitting unit 220 can also be increased from the original 120 degrees to 130 degrees, that is, the light emitting angle of the light emitting unit 220 can be increased by 10 degrees. In short, the thickness of the flat part 212a" of the low-concentration fluorescent adhesive layer 212"' is positively correlated with the light emitting angle of the light emitting unit 220.

In summary, since the reflective protector of the present invention covers the side surfaces of the light-emitting unit, and the bottom of the reflective protector exposes the first bottom of the first electrode pad and the second bottom of the second electrode pad of the light-emitting unit. Therefore, the light-emitting device of the present invention not only does not need to use the existing supporting frame to support and fix the light-emitting unit, but can effectively reduce the packaging thickness and manufacturing cost, and at the same time, can effectively improve the forward light output efficiency of the light-emitting unit.

In addition, since these light-emitting units in the light-emitting device of the present invention are only in contact with one wavelength conversion adhesive layer, it means that these light-emitting units have the same light-emitting surface, and the edges of the low-concentration fluorescent adhesive layer are aligned with the edges of the reflective protection . Therefore, the light emitted by the light-emitting unit is guided by the low-concentration fluorescent adhesive layer, so that the light-emitting device of the present invention can have a larger light-emitting angle and better light-emitting uniformity. In addition, the reflective protection member covers the side surface of the light emitting unit and exposes the first electrode pad and the second electrode pad of the light emitting unit. Therefore, the light-emitting device of the present invention does not need to use the existing supporting frame to support and fix the light-emitting unit, which can effectively reduce the packaging thickness and manufacturing cost, and can also effectively improve the forward light output efficiency of the light-emitting unit.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.

Claims (7)

1. A method for manufacturing a light emitting device, comprising: providing a wavelength conversion layer; arranging a plurality of light-emitting units at intervals on the wavelength conversion layer, and exposing two electrode pads of each light-emitting unit; A plurality of grooves are formed on the wavelength conversion layer by removing a part of the wavelength conversion layer, wherein the grooves are located between the light emitting units, and each groove has a depth smaller than that of the wavelength conversion layer. thickness; forming a reflective protector on the wavelength conversion layer and between the light emitting units, and filling the groove with the reflective protector, wherein the reflective protector exposes the electrode pads of the light emitting unit ;as well as performing a cutting process by cutting the wavelength conversion layer and the reflection protection member along the groove to form a plurality of light emitting devices, wherein a side surface of each light emitting device exposes a part of the outline of the wavelength conversion layer, and The outline of each trench filled with a portion of the reflective protector. 2. The manufacturing method of a light emitting device according to claim 1, wherein the depth of each groove is at least half of the thickness of the wavelength conversion layer. 3. The manufacturing method of the light emitting device according to claim 1, further comprising: After the light-emitting units are arranged on the wavelength conversion layer at intervals, a light-transmitting layer is formed on the wavelength conversion layer. 4. The manufacturing method of the light emitting device according to claim 1, further comprising: Before arranging the light-emitting units at intervals on the wavelength conversion layer, a light-transmitting layer is formed on the wavelength conversion layer. 5 . The manufacturing method of a light emitting device according to claim 1 , wherein the reflective protection member further comprises a reflective surface in contact with the light emitting unit. 6 . 6 . The manufacturing method of the light emitting device according to claim 5 , wherein the reflective surface of the reflective protection member is a plane or a curved surface. 6 . 7 . The manufacturing method of a light-emitting device according to claim 1 , wherein the wavelength conversion layer further comprises a low-concentration fluorescent layer and a high-concentration fluorescent layer, and the light-emitting unit is disposed on the high-concentration fluorescent layer.