CN106098740B - The manufacturing method of organic LED display panel and device - Google Patents
The manufacturing method of organic LED display panel and device Download PDFInfo
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- CN106098740B CN106098740B CN201610632162.6A CN201610632162A CN106098740B CN 106098740 B CN106098740 B CN 106098740B CN 201610632162 A CN201610632162 A CN 201610632162A CN 106098740 B CN106098740 B CN 106098740B
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 23
- 229920005591 polysilicon Polymers 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 19
- 239000000758 substrate Substances 0.000 abstract description 12
- 239000011521 glass Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 25
- 239000000565 sealant Substances 0.000 description 15
- 230000003139 buffering effect Effects 0.000 description 9
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 239000002216 antistatic agent Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000027756 respiratory electron transport chain Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses the manufacturing methods of a kind of organic LED display panel and device.The manufacturing method of organic LED display device includes: A, forms organic LED display panel；B, organic LED display panel is connect with scan drive circuit and data drive circuit；Step A includes: a1, buffer layer is arranged on the glass substrate；A2, insulating layer is set on the buffer layer；A3, switching device layer is set on the insulating layer；A4, planarization layer is set on switching device layer；A5, display device layer is set on planarization layer；A6, cover board is set on display device layer；Step a3 includes: a31, polysilicon layer is arranged on the buffer layer；A32, grid is set on the insulating layer；A33, two first contact surfaces of source electrode are contacted with polysilicon layer；A34, two second contact surfaces of drain electrode are contacted with polysilicon layer.The present invention can avoid increasing the electric current being input in TFT.
Description
Technical field
The present invention relates to display device manufacturing field, in particular to a kind of organic LED display panel and device
Manufacturing method.
Background technique
Traditional organic LED display panel generally uses TFT(Thin Film Transistor, film crystal
Pipe) as switching device.
Currently, the TFT in above-mentioned traditional organic LED display panel has that leakage current is larger, this meeting
The output electric current of the TFT in above-mentioned traditional organic LED display panel is caused to decline.
In order to enable organic LED display panel reaches expected display effect, increase is needed to be input in TFT
Current value, therefore, traditional organic LED display panel needs to expend more electric energy.
Summary of the invention
The purpose of the present invention is to provide the manufacturing methods of a kind of organic LED display panel and device, can make
Expected from the organic LED display panel obtains in the case where not increasing the additional electric current being input in TFT
Display effect.
To solve the above problems, technical scheme is as follows:
A kind of manufacturing method of organic LED display device, the described method comprises the following steps: A, be formed organic
LED display panel；B, by the organic LED display panel and scan drive circuit and data drive circuit
Connection；Wherein, the step A includes: a1, buffer layer is arranged on the glass substrate；A2, insulation is set on the buffer layer
Layer；A3, switching device layer is set on the insulating layer, wherein the switching device layer includes thin film transistor switch, scanning
Line, data line, the thin film transistor switch include polysilicon layer, grid, source electrode, drain electrode；A4, on the switching device layer
Planarization layer is set；A5, display device layer is set on the planarization layer, wherein the display device layer includes anode layer,
Hole injection layer, hole transmission layer, luminous material layer, electron transfer layer, electron injecting layer, cathode layer；A6, in the display
Cover board is set on part layer；Wherein, the step a3 includes: a31, the polysilicon layer is arranged on the buffer layer, wherein institute
It states insulating layer and covers the polysilicon layer；A32, the grid is set on the insulating layer, wherein the position of the grid with
The position of the polysilicon layer is corresponding, and the grid is connect with the scan line；A33, at least the two first of the source electrode are connect
Contacting surface is contacted with the polysilicon layer, and the source electrode is connect with the data line；A34, at least the two second of the drain electrode are connect
Contacting surface is contacted with the polysilicon layer；Before the step a6, the step A further include: a7, form protective buffering plate；In
After the step a5, and before the step a6, the step A further include: a8, in the cover board and the display
Protective buffering plate is set between part layer, wherein the protective buffering plate is used to prevent when the effect in the cover board by external force
The external force is applied on the display device layer through the cover board；The step a7 includes: in the first plate body and the second plate
Flexible material layer is set between body.
In the manufacturing method of above-mentioned organic LED display device, the step A further include: a7.5, described
At the edge part of glass substrate be arranged sealant component, wherein the sealant component at the edge part with the cover board
It is contacted with the substrate, the sealant component is used to seal the seam between the cover board and the substrate at the edge part
Gap.
In the manufacturing method of above-mentioned organic LED display device, structure Gong is mixed in the sealant component
Gu particle, the structure consolidates particle for reinforcing the structural strength of the sealant component；The structure consolidates particle as gold
Metal particles.
In the manufacturing method of above-mentioned organic LED display device, after the step a31, the step a3
Further include: a35, P ion is adulterated in the polysilicon layer.
In the manufacturing method of above-mentioned organic LED display device, the step a5 includes: a51, in the sun
The hole injection layer is set on the layer of pole；A52, the hole transmission layer is set on the hole injection layer；A53, described
The luminous material layer is set on hole transmission layer；A54, the electron transfer layer is set on the luminous material layer；a55,
The electron injecting layer is set on the electron transport layer；A56, the cathode layer is set on the electron injecting layer.
A kind of manufacturing method of organic LED display panel, the described method comprises the following steps: C, in glass base
Buffer layer is set on plate；D, insulating layer is set on the buffer layer；E, switching device layer is set on the insulating layer,
In, the switching device layer includes thin film transistor switch, scan line, data line, and the thin film transistor switch includes polycrystalline
Silicon layer, grid, source electrode, drain electrode；F, planarization layer is set on the switching device layer；G, it is arranged on the planarization layer aobvious
Show device layer, wherein the display device layer includes anode layer, hole injection layer, hole transmission layer, luminous material layer, electronics
Transport layer, electron injecting layer, cathode layer；H, cover board is set on the display device layer；Wherein, the step E include: e1,
The polysilicon layer is set on the buffer layer, wherein the insulating layer covers the polysilicon layer；E2, in the insulation
The grid is set on layer, wherein the position of the grid is corresponding with the position of the polysilicon layer, and the grid is swept with described
Retouch line connection；E3, at least two first contact surfaces of the source electrode are contacted with the polysilicon layer, the source electrode and the data
Line connection；E4, at least two second contact surfaces of the drain electrode are contacted with the polysilicon layer；Before the step c6, institute
State step C further include: c7, form protective buffering plate；After the step c5, and before the step c6, the step
Rapid C further include: c8, protective buffering plate is set between the cover board and the display device layer, wherein the protective buffering plate
For preventing the external force to be applied to the display device layer through the cover board in effect of the cover board by external force；
The step c7 includes: that flexible material layer is arranged between the first plate body and the second plate body.
In the manufacturing method of above-mentioned organic LED display panel, the method also includes following steps: I, In
At the edge part of the glass substrate be arranged sealant component, wherein the sealant component at the edge part with it is described
Cover board and substrate contact, the sealant component are used to seal between the cover board and the substrate at the edge part
Gap.
In the manufacturing method of above-mentioned organic LED display panel, structure Gong is mixed in the sealant component
Gu particle, the structure consolidates particle for reinforcing the structural strength of the sealant component；The structure consolidates particle as gold
Metal particles.
In the manufacturing method of above-mentioned organic LED display panel, after the step e1, the step E is also
Include: e5, in the polysilicon layer adulterate P ion.
In the manufacturing method of above-mentioned organic LED display panel, the step G includes: g1, in the anode
The hole injection layer is set on layer；G2, the hole transmission layer is set on the hole injection layer；G3, in the hole
The luminous material layer is set in transport layer；G4, the electron transfer layer is set on the luminous material layer；G5, described
The electron injecting layer is set on electron transfer layer；G6, the cathode layer is set on the electron injecting layer.
Compared with the prior art, the leakage of the TFT in the organic LED display panel can be effectively reduced in the present invention
Electric current, so that the organic LED display panel is not increasing the additional electric current being input in TFT
In the case of obtain expected display effect.
Detailed description of the invention
Fig. 1 is the flow chart of the manufacturing method of organic LED display device of the invention.
Fig. 2 is the flow chart formed in Fig. 1 the step of machine LED display panel.
Fig. 3 is flow chart the step of switching device layer is arranged on the insulating layer in Fig. 2.
Fig. 4 is flow chart the step of display device layer is arranged on planarization layer in Fig. 2.
Specific embodiment
With reference to Fig. 1, Fig. 2, Fig. 3 and Fig. 4, Fig. 1 is the manufacturing method of organic LED display device of the invention
Flow chart, Fig. 2 are the flow chart formed in Fig. 1 the step of machine LED display panel, and Fig. 3 is in Fig. 2 exhausted
The flow chart for the step of switching device layer is arranged in edge layer, Fig. 4 are the step that display device layer is arranged on planarization layer in Fig. 2
Rapid flow chart.
The manufacturing method of organic LED display device of the invention the following steps are included:
A(step 101) forms organic LED display panel.
B(step 102) connects the organic LED display panel and scan drive circuit and data drive circuit
It connects.
Wherein, the step A includes:
Buffer layer is arranged in a1(step 1011) on the glass substrate.
Insulating layer is arranged on the buffer layer in a2(step 1012).
Switching device layer is arranged in a3(step 1013) on the insulating layer, wherein the switching device layer includes film
Transistor switch, scan line, data line, the thin film transistor switch include polysilicon layer, grid, source electrode, drain electrode；
Planarization layer is arranged on the switching device layer in a4(step 1014).
Display device layer is arranged in a5(step 1015) on the planarization layer, wherein the display device layer includes sun
Pole layer, hole injection layer, hole transmission layer, luminous material layer, electron transfer layer, electron injecting layer, cathode layer；
Cover board is arranged on the display device layer in a6(step 1017).
Wherein, the step a3 includes:
The polysilicon layer is arranged in a31(step 10131) on the buffer layer, wherein described in the insulating layer covering
Polysilicon layer.
The grid is arranged in a32(step 10133) on the insulating layer, wherein the position of the grid and described more
The position of crystal silicon layer is corresponding, and the grid is connect with the scan line.
A33(step 10134) contacts at least two first contact surfaces of the source electrode with the polysilicon layer, the source
Pole is connect with the data line.
A34(step 10135) contacts at least two second contact surfaces of the drain electrode with the polysilicon layer.
In the above-mentioned methods, the step A further include:
Sealant component is arranged in a7.5(step 1016) at the edge part of the glass substrate, wherein the sealant
Component contacts at the edge part with the cover board and the substrate, and the sealant component is for close at the edge part
Seal the gap between the cover board and the substrate.
In the above-mentioned methods, it is mixed with structure in the sealant component and consolidates particle, the structure is consolidated particle and is used for
Reinforce the structural strength of the sealant component.
It is metallic particles that the structure, which consolidates particle,.
In the above-mentioned methods, after the step a31, the step a3 further include:
A35(step 10132) adulterates P ion in the polysilicon layer.
In the above-mentioned methods, the step a5 includes:
The hole injection layer is arranged in a51(step 10151) on the anode layer.
The hole transmission layer is arranged in a52(step 10152) on the hole injection layer.
The luminous material layer is arranged in a53(step 10153) on the hole transport layer.
The electron transfer layer is arranged in a54(step 10154) on the luminous material layer.
The electron injecting layer is arranged in a55(step 10155) on the electron transport layer.
The cathode layer is arranged in a56(step 10156) on the electron injecting layer.
Through the above technical solutions, the electric leakage of the TFT in the organic LED display panel can be effectively reduced
Stream, so that the organic LED display panel is in the feelings for not increasing the additional electric current being input in TFT
Expected display effect is obtained under condition, and then reduces energy consumption.
As an improvement before the step a6, the step A further include:
A7, protective buffering plate is formed；
After the step a5, and before the step a6, the step A further include:
A8, protective buffering plate is set between the cover board and the display device layer, wherein the protective buffering plate is used
In preventing the external force to be applied on the display device layer through the cover board in effect of the cover board by external force.
The step a7 includes:
Flexible material layer is set between the first plate body and the second plate body.
Before the step a7, the step A is also wrapped:
A9, the first spring array is set in one side of first plate body towards the flexible material layer, described first
Spring array includes at least two first springs, wherein and one end of first spring is fixed on first plate body, and described the
The other end of one spring extends toward the direction far from first plate body.
A10, second spring array is set in one side of second plate body towards the flexible material layer, described second
Spring array includes at least two second springs, wherein and one end of the second spring is fixed on second plate body, and described the
The other end of two springs extends towards the direction far from second plate body.
A11, through-hole array is set on the flexible material layer, wherein the through-hole array includes at least two through hole, institute
Through-hole is stated through the flexible material layer.
A12, first spring and the second spring are arranged in the through-hole, wherein first spring
Internal diameter is greater than the outer diameter of the second spring.
As an improvement before the step a12, the step A further include:
A13, first spring is nested in the first flexible pipe, first flexible pipe is used for first spring
It is separated with the second spring；
A14, the second spring is nested in the second flexible pipe, second flexible pipe is used for the second spring
It is separated with the inner wall of the through-hole.
The step a12 are as follows:
First flexible pipe is nested in second spring, and by the first spring, second spring, described
First flexible pipe and second flexible pipe are arranged in the through-hole.
Through the above technical solutions, be beneficial to prevent first spring and the second spring mutually block and set (mutually around
It is integrated), and opening portion or inner wall and the second spring Xiang Kashe of the through-hole are prevented, to avoid described first
Spring and second spring failure.
First flexible pipe and second flexible pipe are rubber tube.
After the step a13, the step A further include:
A15, the inner wall of first flexible pipe and first spring are mutually fixed.
After the step a14, the step A further include:
A16, the inner wall of second flexible pipe is mutually fixed with the second spring.
After the step a12, the step A further include:
A17, the outer wall of first flexible pipe is mutually fixed with the second spring.
The step a15 includes:
In the inner wall of first flexible pipe, the first clamping part is set.
First rib of first spring is fastened at first clamping part.
The step a16 includes:
In the inner wall of second flexible pipe, the second clamping part is set.
Second rib of the second spring is fastened at second clamping part.
The step a17 includes:
In the outer wall of second flexible pipe, third clamping part is set.
The second rib card of the second spring is arranged at the third clamping part.
After the step a9, the step A further include:
A18, first plate body towards the flexible material layer one side be arranged the first antistatic material layer.
After the step a10, the step A further include:
A19, the flexible material layer towards first plate body one side be arranged the second antistatic material layer.
After the step a11, the step A further include:
A20, second plate body towards the flexible material layer one side be arranged third antistatic material layer, Yi Ji
The 4th antistatic material layer is arranged in the one side of the flexible material layer towards second plate body.
The first antistatic material layer and the second antistatic material layer be used in first plate body with it is described
Flexible material layer prevents the generation of electrostatic when rubbing, the third antistatic material layer and the 4th antistatic material layer are used for
The generation of electrostatic is prevented when second plate body and the flexible material layer rub.
Material corresponding to the flexible material layer is foamed material.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of manufacturing method of organic LED display device, which is characterized in that the described method comprises the following steps:
A, organic LED display panel is formed；
B, the organic LED display panel is connect with scan drive circuit and data drive circuit；
Wherein, the step A includes:
A1, buffer layer is set on the glass substrate；
A2, insulating layer is set on the buffer layer；
A3, switching device layer is set on the insulating layer, wherein the switching device layer includes thin film transistor switch, sweeps
Line, data line are retouched, the thin film transistor switch includes polysilicon layer, grid, source electrode, drain electrode；
A4, planarization layer is set on the switching device layer；
A5, display device layer is set on the planarization layer, wherein the display device layer includes anode layer, hole injection
Layer, hole transmission layer, luminous material layer, electron transfer layer, electron injecting layer, cathode layer；
A6, cover board is set on the display device layer；
Wherein, the step a3 includes:
A31, the polysilicon layer is set on the buffer layer, wherein the insulating layer covers the polysilicon layer；
A32, the grid is set on the insulating layer, wherein the position pair of the position of the grid and the polysilicon layer
It answers, the grid is connect with the scan line；
A33, at least two first contact surfaces of the source electrode are contacted with the polysilicon layer, the source electrode and the data line connect
It connects；
A34, at least two second contact surfaces of the drain electrode are contacted with the polysilicon layer；
Before the step a6, the step A further include:
A7, protective buffering plate is formed；
After the step a5, and before the step a6, the step A further include:
A8, protective buffering plate is set between the cover board and the display device layer, wherein the protective buffering plate is used for
The external force is prevented to be applied on the display device layer when effect of the cover board by external force through the cover board；
The step a7 includes:
Flexible material layer is set between the first plate body and the second plate body.
2. the manufacturing method of organic LED display device according to claim 1, which is characterized in that the step
A further include:
A7.5, sealant component is set at the edge part of the glass substrate, wherein the sealant component is at the edge
It is contacted at portion with the cover board and the substrate, the sealant component is used to seal the cover board and institute at the edge part
State the gap between substrate.
3. the manufacturing method of organic LED display device according to claim 2, which is characterized in that the sealing
It is mixed with structure in glue component and consolidates particle, the structure consolidates particle for reinforcing the structural strength of the sealant component；
It is metallic particles that the structure, which consolidates particle,.
4. the manufacturing method of organic LED display device according to claim 1, which is characterized in that in the step
After rapid a31, the step a3 further include:
A35, P ion is adulterated in the polysilicon layer.
5. the manufacturing method of organic LED display device according to claim 1, which is characterized in that the step
A5 includes:
A51, the hole injection layer is set on the anode layer；
A52, the hole transmission layer is set on the hole injection layer；
A53, the luminous material layer is set on the hole transport layer；
A54, the electron transfer layer is set on the luminous material layer；
A55, the electron injecting layer is set on the electron transport layer；
A56, the cathode layer is set on the electron injecting layer.
6. a kind of manufacturing method of organic LED display panel, which is characterized in that the described method comprises the following steps:
C, buffer layer is set on the glass substrate；
D, insulating layer is set on the buffer layer；
E, switching device layer is set on the insulating layer, wherein the switching device layer includes thin film transistor switch, scanning
Line, data line, the thin film transistor switch include polysilicon layer, grid, source electrode, drain electrode；
F, planarization layer is set on the switching device layer；
G, display device layer is set on the planarization layer, wherein the display device layer includes anode layer, hole injection
Layer, hole transmission layer, luminous material layer, electron transfer layer, electron injecting layer, cathode layer；
H, cover board is set on the display device layer；
Wherein, the step E includes:
E1, the polysilicon layer is set on the buffer layer, wherein the insulating layer covers the polysilicon layer；
E2, the grid is set on the insulating layer, wherein the position pair of the position of the grid and the polysilicon layer
It answers, the grid is connect with the scan line；
E3, at least two first contact surfaces of the source electrode are contacted with the polysilicon layer, the source electrode and the data line connect
It connects；
E4, at least two second contact surfaces of the drain electrode are contacted with the polysilicon layer；
The step C further include:
Protective buffering plate is set between the cover board and the display device layer, wherein the protective buffering plate is used in institute
The external force is prevented to be applied on the display device layer when stating effect of the cover board by external force through the cover board；
Flexible material layer is arranged between the first plate body and the second plate body in the protective buffering plate.
7. the manufacturing method of organic LED display panel according to claim 6, which is characterized in that the method
It is further comprising the steps of:
I, sealant component is set at the edge part of the glass substrate, wherein the sealant component is in the edge part
Place is contacted with the cover board and the substrate, the sealant component be used at the edge part sealing cover board with it is described
Gap between substrate.
8. the manufacturing method of organic LED display panel according to claim 7, which is characterized in that the sealing
It is mixed with structure in glue component and consolidates particle, the structure consolidates particle for reinforcing the structural strength of the sealant component；
It is metallic particles that the structure, which consolidates particle,.
9. the manufacturing method of organic LED display panel according to claim 6, which is characterized in that in the step
After rapid e1, the step E further include:
E5, P ion is adulterated in the polysilicon layer.
10. the manufacturing method of organic LED display panel according to claim 6, which is characterized in that the step
Suddenly G includes:
G1, the hole injection layer is set on the anode layer；
G2, the hole transmission layer is set on the hole injection layer；
G3, the luminous material layer is set on the hole transport layer；
G4, the electron transfer layer is set on the luminous material layer；
G5, the electron injecting layer is set on the electron transport layer；
G6, the cathode layer is set on the electron injecting layer.
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| CN102760386A (en) * | 2011-04-25 | 2012-10-31 | 三星移动显示器株式会社 | Display device and method of manufacturing the same |
| CN103824873A (en) * | 2012-11-15 | 2014-05-28 | 三星显示有限公司 | Organic light emitting display device and method for fabricting the same |
| CN104885142A (en) * | 2012-12-27 | 2015-09-02 | 乐金显示有限公司 | Flexible organic light emitting display device and method for manufacturing the same |
| CN104637438A (en) * | 2013-11-06 | 2015-05-20 | 三星显示有限公司 | Flexible display and manufacturing method thereof |
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| CN106098740A (en) | 2016-11-09 |
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