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CN106098740A - Organic LED display panel and the manufacture method of device - Google Patents

Organic LED display panel and the manufacture method of device Download PDF

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Publication number
CN106098740A
CN106098740A CN201610632162.6A CN201610632162A CN106098740A CN 106098740 A CN106098740 A CN 106098740A CN 201610632162 A CN201610632162 A CN 201610632162A CN 106098740 A CN106098740 A CN 106098740A
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China
Prior art keywords
layer
led display
organic led
manufacture method
display device
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CN201610632162.6A
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Chinese (zh)
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CN106098740B (en
Inventor
刘彦龙
苏俊武
丁杰
李涛
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Yancheng Xiangguo Technology Co ltd
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Shenzhen Aiyirui Technology Co Ltd
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Priority to CN201610632162.6A priority Critical patent/CN106098740B/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses the manufacture method of a kind of organic LED display panel and device.The manufacture method of organic LED display device includes: A, formation organic LED display panel；B, organic LED display panel is connected with scan drive circuit and data drive circuit；Step A includes: a1, arrange cushion on the glass substrate；A2, insulating barrier is set on the buffer layer；A3, switching device layer is set on the insulating layer；A4, planarization layer is set on switching device layer；A5, display device layer is set on planarization layer；A6, cover plate is set on display device layer；Step a3 includes: a31, arrange polysilicon layer on the buffer layer；A32, grid is set on the insulating layer；A33, two first contact surfaces of source electrode are contacted with polysilicon layer；A34, by drain electrode two second contact surfaces contact with polysilicon layer.The present invention can input the electric current to TFT avoiding increase.

Description

Organic LED display panel and the manufacture method of device
Technical field
The present invention relates to display device and manufacture field, particularly to a kind of organic LED display panel and device Manufacture method.
Background technology
Traditional organic LED display panel typically uses TFT(Thin Film Transistor, film crystal Pipe) it is used as switching device.
At present, there is the problem that leakage current is bigger in the TFT in above-mentioned traditional organic LED display panel, this meeting The output electric current causing the TFT in above-mentioned traditional organic LED display panel declines.
So that organic LED display panel reaches intended display effect, increase is needed to input to TFT Current value, therefore, traditional organic LED display panel needs to expend more electric energy.
Summary of the invention
It is an object of the invention to provide the manufacture method of a kind of organic LED display panel and device, it can make Obtain described organic LED display panel and obtain intended in the case of not increasing the extra electric current inputted to TFT Display effect.
For solving the problems referred to above, technical scheme is as follows:
The manufacture method of a kind of organic LED display device, said method comprising the steps of: A, formation organic light emission Diode display panel；B, by described organic LED display panel and scan drive circuit and data drive circuit even Connect；Wherein, described step A includes: a1, arrange cushion on the glass substrate；A2, insulating barrier is set on described cushion； A3, switching device layer is set on described insulating barrier, wherein, described switching device layer include thin film transistor switch, scan line, Data wire, described thin film transistor switch includes polysilicon layer, grid, source electrode, drain electrode；A4, set on described switching device layer Put planarization layer；A5, arranging display device layer on described planarization layer, wherein, described display device layer includes anode layer, empty Cave implanted layer, hole transmission layer, luminous material layer, electron transfer layer, electron injecting layer, cathode layer；A6, at described display device Cover plate is set on Ceng；Wherein, described step a3 includes: a31, arrange described polysilicon layer on described cushion, wherein, described Insulating barrier covers described polysilicon layer；A32, described grid is set on described insulating barrier, wherein, the position of described grid and institute The position stating polysilicon layer is corresponding, and described grid is connected with described scan line；A33, by least the two first of described source electrode contacts Face contacts with described polysilicon layer, and described source electrode is connected with described data wire；A34, by least the two second of described drain electrode contacts Face contacts with described polysilicon layer.
In the manufacture method of above-mentioned organic LED display device, described step A also includes: a7, at described glass Fluid sealant component is set at the edge part of glass substrate, wherein, described fluid sealant component at described edge part with described cover plate and Described substrate contacts, and described fluid sealant component is for sealing the seam between described cover plate and described substrate at described edge part Gap.
In the manufacture method of above-mentioned organic LED display device, described fluid sealant component is mixed with structure and consolidates Gu granule, described structure consolidates granule for strengthening the structural strength of described fluid sealant component；Described structure consolidates granule for gold Metal particles.
In the manufacture method of above-mentioned organic LED display device, after described step a31, described step a3 Also include: a35, doping P ion in described polysilicon layer.
In the manufacture method of above-mentioned organic LED display device, described step a5 includes: a51, at described sun Described hole injection layer is set on the layer of pole；A52, described hole transmission layer is set on described hole injection layer；A53, described Described luminous material layer is set on hole transmission layer；A54, described electron transfer layer is set on described luminous material layer；a55、 Described electron injecting layer is set on the electron transport layer；A56, described cathode layer is set on described electron injecting layer.
The manufacture method of a kind of organic LED display panel, said method comprising the steps of: C, at glass base Cushion is set on plate；D, insulating barrier is set on described cushion；E, switching device layer is set on described insulating barrier, its In, described switching device layer includes that thin film transistor switch, scan line, data wire, described thin film transistor switch include polycrystalline Silicon layer, grid, source electrode, drain electrode；F, planarization layer is set on described switching device layer；G, arrange on described planarization layer aobvious Showing device layer, wherein, described display device layer includes anode layer, hole injection layer, hole transmission layer, luminous material layer, electronics Transport layer, electron injecting layer, cathode layer；H, cover plate is set on described display device layer；Wherein, described step E includes: e1, Arranging described polysilicon layer on described cushion, wherein, described insulating barrier covers described polysilicon layer；E2, in described insulation Arranging described grid on Ceng, wherein, the position of described grid is corresponding with the position of described polysilicon layer, and described grid is swept with described Retouch line to connect；E3, at least two first contact surfaces of described source electrode are contacted with described polysilicon layer, described source electrode and described data Line connects；E4, at least two second contact surfaces of described drain electrode are contacted with described polysilicon layer.
In the manufacture method of above-mentioned organic LED display panel, described method is further comprising the steps of: I, Fluid sealant component is set at the edge part of described glass substrate, wherein, described fluid sealant component at described edge part with described Cover plate contacts with described substrate, and described fluid sealant component is for sealing between described cover plate and described substrate at described edge part Gap.
In the manufacture method of above-mentioned organic LED display panel, described fluid sealant component is mixed with structure and consolidates Gu granule, described structure consolidates granule for strengthening the structural strength of described fluid sealant component；Described structure consolidates granule for gold Metal particles.
In the manufacture method of above-mentioned organic LED display panel, after described step e1, described step E is also Including: e5, doping P ion in described polysilicon layer.
In the manufacture method of above-mentioned organic LED display panel, described step G includes: g1, at described anode Described hole injection layer is set on Ceng；G2, described hole transmission layer is set on described hole injection layer；G3, in described hole Described luminous material layer is set in transport layer；G4, described electron transfer layer is set on described luminous material layer；G5, described Described electron injecting layer is set on electron transfer layer；G6, described cathode layer is set on described electron injecting layer.
Hinge structure, the present invention can effectively reduce the leakage of the TFT in described organic LED display panel Electric current, so that described organic LED display panel is not increasing the extra electric current inputted to TFT In the case of obtain intended display effect.
Accompanying drawing explanation
Fig. 1 is the flow chart of the manufacture method of the organic LED display device of the present invention.
Fig. 2 is the flow chart of the step forming organic LED display panel in Fig. 1.
Fig. 3 is the flow chart of the step arranging switching device layer on the insulating layer in Fig. 2.
Fig. 4 is the flow chart of the step arranging display device layer on planarization layer in Fig. 2.
Detailed description of the invention
With reference to Fig. 1, Fig. 2, Fig. 3 and Fig. 4, Fig. 1 is the manufacture method of the organic LED display device of the present invention Flow chart, Fig. 2 is the flow chart of step forming organic LED display panel in Fig. 1, Fig. 3 be in Fig. 2 absolutely Arranging the flow chart of the step of switching device layer in edge layer, Fig. 4 is the step arranging display device layer on planarization layer in Fig. 2 Rapid flow chart.
The manufacture method of the organic LED display device of the present invention comprises the following steps:
A(step 101), formed organic LED display panel.
B(step 102), by described organic LED display panel and scan drive circuit and data drive circuit even Connect.
Wherein, described step A includes:
A1(step 1011), cushion is set on the glass substrate.
A2(step 1012), on described cushion, insulating barrier is set.
A3(step 1013), switching device layer is set on described insulating barrier, wherein, described switching device layer includes thin film Transistor switch, scan line, data wire, described thin film transistor switch includes polysilicon layer, grid, source electrode, drain electrode；
A4(step 1014), on described switching device layer, planarization layer is set.
A5(step 1015), display device layer is set on described planarization layer, wherein, described display device layer includes sun Pole layer, hole injection layer, hole transmission layer, luminous material layer, electron transfer layer, electron injecting layer, cathode layer；
A6(step 1017), on described display device layer, cover plate is set.
Wherein, described step a3 includes:
A31(step 10131), described polysilicon layer is set on described cushion, wherein, described insulating barrier cover described polycrystalline Silicon layer.
A32(step 10133), described grid is set on described insulating barrier, wherein, the position of described grid with described many The position of crystal silicon layer is corresponding, and described grid is connected with described scan line.
A33(step 10134), at least two first contact surfaces of described source electrode are contacted with described polysilicon layer, described source Pole is connected with described data wire.
A34(step 10135), at least two second contact surfaces of described drain electrode are contacted with described polysilicon layer.
In the above-mentioned methods, described step A also includes:
A7(step 1016), fluid sealant component is set at the edge part of described glass substrate, wherein, described fluid sealant component exists Contacting with described cover plate and described substrate at described edge part, described fluid sealant component is described for sealing at described edge part Gap between cover plate and described substrate.
In the above-mentioned methods, described fluid sealant component is mixed with structure and consolidates granule, described structure consolidate granule for Strengthen the structural strength of described fluid sealant component.
It is metallic particles that described structure consolidates granule.
In the above-mentioned methods, after described step a31, described step a3 also includes:
A35(step 10132), in described polysilicon layer adulterate P ion.
In the above-mentioned methods, described step a5 includes:
A51(step 10151), described hole injection layer is set on described anode layer.
A52(step 10152), described hole transmission layer is set on described hole injection layer.
A53(step 10153), described luminous material layer is set on the hole transport layer.
A54(step 10154), described electron transfer layer is set on described luminous material layer.
A55(step 10155), described electron injecting layer is set on the electron transport layer.
A56(step 10156), described cathode layer is set on described electron injecting layer.
By technique scheme, can effectively reduce the electric leakage of TFT in described organic LED display panel Stream, so that described organic LED display panel is in the feelings not increasing the extra electric current inputted to TFT Obtain intended display effect under condition, and then reduce energy consumption.
Improving as one, before described step a6, described step A also includes:
A7, formation protective buffering plate；
After described step a5, and before described step a6, described step A also includes:
A8, protective buffering plate is set between described cover plate and described display device layer, wherein, described protective buffering plate for Described cover plate prevents described external force to be applied on described display device layer through described cover plate when being acted on by external force.
Described step a7 includes:
Between the first plate body and the second plate body, flexible material layer is set.
Before described step a7, described step A is also wrapped:
A9, at described first plate body, the first spring array, described first spring are set in the one side of described flexible material layer Array includes at least two first springs, and wherein, one end of described first spring is fixed on described first plate body, described first bullet The other end of spring extends toward the direction away from described first plate body.
A10, at described second plate body towards arranging the second spring array in the one side of described flexible material layer, described second Spring array includes at least two second springs, and wherein, one end of described second spring is fixed on described second plate body, described The other end of two springs extends towards the direction away from described second plate body.
A11, arranging via-hole array on described flexible material layer, wherein, described via-hole array includes at least two through hole, institute State through hole and run through described flexible material layer.
A12, described first spring and described second spring are arranged in described through hole, wherein, described first spring Internal diameter is more than the external diameter of described second spring.
Improving as one, before described step a12, described step A also includes:
A13, being nested in the first flexible pipe by described first spring, described first flexible pipe is for by described first spring and institute State the second spring to separate；
A14, being nested in the second flexible pipe by described second spring, described second flexible pipe is for by described second spring and institute The inwall stating through hole separates.
Described step a12 is:
Described first flexible pipe is nested in the second spring, and by described first spring, described second spring, described first Flexible pipe and described second flexible pipe are arranged in described through hole.
By technique scheme, desirably prevent described first spring and described second spring mutually block and set (mutually around It is integrated), and prevent from the peristome of described through hole or inwall from blocking mutually with described second spring setting, thus avoid described first Spring and described second spring failure.
Described first flexible pipe and described second flexible pipe are rubber tube.
After described step a13, described step A also includes:
A15, the inwall of described first flexible pipe is fixed with described first spring.
After described step a14, described step A also includes:
A16, the inwall of described second flexible pipe is fixed with described second spring.
After described step a12, described step A also includes:
A17, the outer wall of described first flexible pipe is fixed with described second spring.
Described step a15 includes:
Inwall at described first flexible pipe arranges the first clamping part.
First rib of described first spring is fastened at described first clamping part.
Described step a16 includes:
Inwall at described second flexible pipe arranges the second clamping part.
Second rib of described second spring is fastened at described second clamping part.
Described step a17 includes:
Outer wall at described second flexible pipe arranges the 3rd clamping part.
The described second rib card of described second spring is arranged at described 3rd clamping part.
After described step a9, described step A also includes:
A18, at described first plate body, the first antistatic material layer is set towards the one side of described flexible material layer.
After described step a10, described step A also includes:
A19, at described flexible material layer, the second antistatic material layer is set towards the one side of described first plate body.
After described step a11, described step A also includes:
A20, at described second plate body, the 3rd antistatic material layer is set towards the one side of described flexible material layer, and described Flexible material layer arranges the 4th antistatic material layer towards the one side of described second plate body.
Described first antistatic material layer and described second antistatic material layer at described first plate body with described Preventing the generation of electrostatic during flexible material layer friction, described 3rd antistatic material layer and described 4th antistatic material layer are used for The generation of electrostatic is prevented with described flexible material layer when described second plate body rubs.
Material corresponding to described flexible material layer is foamed materials.
In sum, although the present invention is disclosed above with preferred embodiment, but above preferred embodiment and be not used to limit The present invention processed, those of ordinary skill in the art, without departing from the spirit and scope of the present invention, all can make various change and profit Decorations, therefore protection scope of the present invention defines in the range of standard with claim.

Claims (10)

1. the manufacture method of an organic LED display device, it is characterised in that said method comprising the steps of:
A, formation organic LED display panel；
B, described organic LED display panel is connected with scan drive circuit and data drive circuit；
Wherein, described step A includes:
A1, cushion is set on the glass substrate；
A2, insulating barrier is set on described cushion；
A3, arranging switching device layer on described insulating barrier, wherein, described switching device layer includes thin film transistor switch, sweeps Retouching line, data wire, described thin film transistor switch includes polysilicon layer, grid, source electrode, drain electrode；
A4, planarization layer is set on described switching device layer；
A5, arranging display device layer on described planarization layer, wherein, described display device layer includes anode layer, and hole is injected Layer, hole transmission layer, luminous material layer, electron transfer layer, electron injecting layer, cathode layer；
A6, cover plate is set on described display device layer；
Wherein, described step a3 includes:
A31, arranging described polysilicon layer on described cushion, wherein, described insulating barrier covers described polysilicon layer；
A32, described grid is set on described insulating barrier, wherein, the position pair of the position of described grid and described polysilicon layer Should, described grid is connected with described scan line；
A33, being contacted with described polysilicon layer by least two first contact surfaces of described source electrode, described source electrode is with described data wire even Connect；
A34, at least two second contact surfaces of described drain electrode are contacted with described polysilicon layer.
The manufacture method of organic LED display device the most according to claim 1, it is characterised in that described step A also includes:
A7, arranging fluid sealant component at the edge part of described glass substrate, wherein, described fluid sealant component is at described edge part Place contacts with described cover plate and described substrate, and described fluid sealant component is for sealing described cover plate with described at described edge part Gap between substrate.
The manufacture method of organic LED display device the most according to claim 2, it is characterised in that described sealing Being mixed with structure in glue component and consolidate granule, described structure consolidates granule for strengthening the structural strength of described fluid sealant component；
It is metallic particles that described structure consolidates granule.
The manufacture method of organic LED display device the most according to claim 1, it is characterised in that in described step After rapid a31, described step a3 also includes:
A35, in described polysilicon layer adulterate P ion.
The manufacture method of organic LED display device the most according to claim 1, it is characterised in that described step A5 includes:
A51, described hole injection layer is set on described anode layer；
A52, described hole transmission layer is set on described hole injection layer；
A53, described luminous material layer is set on the hole transport layer；
A54, described electron transfer layer is set on described luminous material layer；
A55, described electron injecting layer is set on the electron transport layer；
A56, described cathode layer is set on described electron injecting layer.
6. the manufacture method of an organic LED display panel, it is characterised in that said method comprising the steps of:
C, cushion is set on the glass substrate；
D, insulating barrier is set on described cushion；
E, arranging switching device layer on described insulating barrier, wherein, described switching device layer includes thin film transistor switch, scanning Line, data wire, described thin film transistor switch includes polysilicon layer, grid, source electrode, drain electrode；
F, planarization layer is set on described switching device layer；
G, arranging display device layer on described planarization layer, wherein, described display device layer includes anode layer, and hole is injected Layer, hole transmission layer, luminous material layer, electron transfer layer, electron injecting layer, cathode layer；
H, cover plate is set on described display device layer；
Wherein, described step E includes:
E1, arranging described polysilicon layer on described cushion, wherein, described insulating barrier covers described polysilicon layer；
E2, described grid is set on described insulating barrier, wherein, the position pair of the position of described grid and described polysilicon layer Should, described grid is connected with described scan line；
E3, being contacted with described polysilicon layer by least two first contact surfaces of described source electrode, described source electrode is with described data wire even Connect；
E4, at least two second contact surfaces of described drain electrode are contacted with described polysilicon layer.
The manufacture method of organic LED display panel the most according to claim 6, it is characterised in that described method Further comprising the steps of:
I, arranging fluid sealant component at the edge part of described glass substrate, wherein, described fluid sealant component is at described edge part Place contacts with described cover plate and described substrate, and described fluid sealant component is for sealing described cover plate with described at described edge part Gap between substrate.
The manufacture method of organic LED display panel the most according to claim 7, it is characterised in that described sealing Being mixed with structure in glue component and consolidate granule, described structure consolidates granule for strengthening the structural strength of described fluid sealant component；
It is metallic particles that described structure consolidates granule.
The manufacture method of organic LED display panel the most according to claim 6, it is characterised in that in described step After rapid e1, described step E also includes:
E5, in described polysilicon layer adulterate P ion.
The manufacture method of organic LED display panel the most according to claim 6, it is characterised in that described step Rapid G includes:
G1, described hole injection layer is set on described anode layer；
G2, described hole transmission layer is set on described hole injection layer；
G3, described luminous material layer is set on the hole transport layer；
G4, described electron transfer layer is set on described luminous material layer；
G5, described electron injecting layer is set on the electron transport layer；
G6, described cathode layer is set on described electron injecting layer.
CN201610632162.6A 2016-08-04 2016-08-04 The manufacturing method of organic LED display panel and device Active CN106098740B (en)

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CN103824873A (en) * 2012-11-15 2014-05-28 三星显示有限公司 Organic light emitting display device and method for fabricting the same
CN104637438A (en) * 2013-11-06 2015-05-20 三星显示有限公司 Flexible display and manufacturing method thereof
CN104885142A (en) * 2012-12-27 2015-09-02 乐金显示有限公司 Flexible organic light emitting display device and method for manufacturing the same
US20150280169A1 (en) * 2014-03-25 2015-10-01 Samsung Display Co., Ltd. Display device, method of manufacturing the same, and method of repairing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102760386A (en) * 2011-04-25 2012-10-31 三星移动显示器株式会社 Display device and method of manufacturing the same
CN103824873A (en) * 2012-11-15 2014-05-28 三星显示有限公司 Organic light emitting display device and method for fabricting the same
CN104885142A (en) * 2012-12-27 2015-09-02 乐金显示有限公司 Flexible organic light emitting display device and method for manufacturing the same
CN104637438A (en) * 2013-11-06 2015-05-20 三星显示有限公司 Flexible display and manufacturing method thereof
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Contract record no.: X2023980044512

Denomination of invention: Manufacturing method for organic light-emitting diode display panels and devices

Granted publication date: 20191101

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Record date: 20231027

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Assignee: YANCHENG LIYAN NEW MATERIAL Co.,Ltd.

Assignor: YANCHENG XIANGGUO TECHNOLOGY Co.,Ltd.

Contract record no.: X2023980044684

Denomination of invention: Manufacturing method for organic light-emitting diode display panels and devices

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Assignee: Yancheng Maijie Software Technology Co.,Ltd.

Assignor: YANCHENG XIANGGUO TECHNOLOGY Co.,Ltd.

Contract record no.: X2023980052107

Denomination of invention: Manufacturing method of organic light-emitting diode display panel and device

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Assignee: YANCHENG DUTING AUTO PARTS Co.,Ltd.

Assignor: YANCHENG XIANGGUO TECHNOLOGY Co.,Ltd.

Contract record no.: X2024980008192

Denomination of invention: Manufacturing method of organic light-emitting diode display panel and device

Granted publication date: 20191101

License type: Common License

Record date: 20240627

Application publication date: 20161109

Assignee: Yancheng Beichuang Environmental Protection Technology Co.,Ltd.

Assignor: YANCHENG XIANGGUO TECHNOLOGY Co.,Ltd.

Contract record no.: X2024980008346

Denomination of invention: Manufacturing method of organic light-emitting diode display panel and device

Granted publication date: 20191101

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Assignee: Yancheng Xinyao mould Co.,Ltd.

Assignor: YANCHENG XIANGGUO TECHNOLOGY Co.,Ltd.

Contract record no.: X2024980008253

Denomination of invention: Manufacturing method of organic light-emitting diode display panel and device

Granted publication date: 20191101

License type: Common License

Record date: 20240627

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Assignee: JIANGSU ANNATAI ENVIRONMENTAL PROTECTION TECHNOLOGY CO.,LTD.

Assignor: YANCHENG XIANGGUO TECHNOLOGY Co.,Ltd.

Contract record no.: X2024980008215

Denomination of invention: Manufacturing method of organic light-emitting diode display panel and device

Granted publication date: 20191101

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Assignee: YANCHENG RUITONG PLASTIC Co.,Ltd.

Assignor: YANCHENG XIANGGUO TECHNOLOGY Co.,Ltd.

Contract record no.: X2024980008695

Denomination of invention: Manufacturing method of organic light-emitting diode display panel and device

Granted publication date: 20191101

License type: Common License

Record date: 20240702

Application publication date: 20161109

Assignee: JIANGSU ZHONGKE HEAVY INDUSTRY Co.,Ltd.

Assignor: YANCHENG XIANGGUO TECHNOLOGY Co.,Ltd.

Contract record no.: X2024980008673

Denomination of invention: Manufacturing method of organic light-emitting diode display panel and device

Granted publication date: 20191101

License type: Common License

Record date: 20240702

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Assignee: JIANGSU WANHE COATING MACHINE Co.,Ltd.

Assignor: YANCHENG XIANGGUO TECHNOLOGY Co.,Ltd.

Contract record no.: X2024980008672

Denomination of invention: Manufacturing method of organic light-emitting diode display panel and device

Granted publication date: 20191101

License type: Common License

Record date: 20240702

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