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CN106062950B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN106062950B
CN106062950B CN201580012369.7A CN201580012369A CN106062950B CN 106062950 B CN106062950 B CN 106062950B CN 201580012369 A CN201580012369 A CN 201580012369A CN 106062950 B CN106062950 B CN 106062950B
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CN
China
Prior art keywords
connector portions
joint portion
metal plate
semiconductor device
bonding material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580012369.7A
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English (en)
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CN106062950A (zh
Inventor
门口卓矢
平野敬洋
川岛崇功
福谷啓太
奥村知巳
西畑雅由
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Motor Corp
Original Assignee
Denso Corp
Toyota Motor Corp
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Publication date
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Publication of CN106062950A publication Critical patent/CN106062950A/zh
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Publication of CN106062950B publication Critical patent/CN106062950B/zh
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    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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Abstract

本发明提供一种半导体装置，具有：半导体元件；第一板状部，其与所述半导体元件的上表面侧的电极电连接，并具备从侧面突起的第一接头部，且由导电体构成；第二板状部，其具备从侧面突起的第二接头部，且由导电体构成，所述第一接头部的下表面与所述第二接头部的上表面以对置的方式被配置，且经由导电性的接合材料而被电连接，在所述第一接头部的下表面与所述第二接头部的上表面对置的部分处，设置有确保所述第二接头部的顶端上部和所述第一接头部的下表面之间的所述接合材料的厚度的接合材料厚度确保单元。

Description

半导体装置
技术领域
本发明涉及一种半导体装置。
背景技术
近几年，已知一种将金属板通过电或热的方式连接于多个半导体元件的上下表面上，并进行了树脂密封的半导体装置(例如，参照专利文献1)。作为这样的半导体装置的一个示例，能够列举出将绝缘栅型双极性晶体管(IGBT)或二极管等半导体元件纵横地被排列而成的半导体装置。
IGBT为利用电场效应晶体管(FET)的栅极来置换了双极性晶体管的基极的构件，由于兼具作为电流驱动方式的双极性晶体管的高速性或耐电力性、和作为电压驱动方式的电场效应晶体管的省电性，因此，上述的这种半导体装置能够作为实施开关动作的功率半导体装置来使用。
在先技术文献
专利文献
专利文献1：日本特开2012-235081号公报
发明内容
发明所要解决的课题
可是，虽然在如上所述的半导体装置中，通过接合材料(软焊料等)而将金属板彼此接合在一起，但是，存在如下的问题，即，在一方的金属板相对于另一方的金属板而倾斜了的情况下，一方的金属板的端部与另一方的金属板的表面接触，从而在所接触的部分的附近无法确保接合材料的厚度，进而连接可靠性会降低。
本发明是鉴于上述问题而完成的发明，其课题在于，提供一种即使在经由接合材料而被连接的连接对象部位的一方倾斜了的情况下也能够确保连接可靠性的半导体装置。
用于解决课题的方法
本半导体装置的要件在于，具有：半导体元件；第一板状部，其与所述半导体元件的上表面侧的电极电连接，并具备从侧面突起的第一接头部，且由导电体构成；第二板状部，其具备从侧面突起的第二接头部，且由导电体构成，所述第一接头部的下表面与所述第二接头部的上表面以对置的方式被配置，且经由导电性的接合材料而被电连接，在所述第一接头部的下表面与所述第二接头部的上表面对置的部分处，设置有确保所述第二接头部的顶端上部和所述第一接头部的下表面之间的所述接合材料的厚度的接合材料厚度确保单元。
发明效果
根据所公开的技术，能够提供一种即使在经由接合材料而被连接的连接对象部位的一方倾斜了的情况下也能够确保连接可靠性的半导体装置。
附图说明
图1为例示第一实施方式所涉及的半导体装置的电路结构的图。
图2为例示第一实施方式所涉及的半导体装置的立体图。
图3为例示第一实施方式所涉及的半导体装置的沿着图2的A-A线的剖视图。
图4为例示第一实施方式所涉及的半导体装置的沿着图2的B-B线的剖视图。
图5为例示第一实施方式所涉及的半导体装置的内部结构的立体图。
图6为例示第一实施方式所涉及的半导体装置的沿着图5的C-C线的局部剖视图。
图7为例示第一实施方式所涉及的半导体装置的与图6对应的局部仰视图。
图8为例示第一实施方式所涉及的半导体装置的制造工序的图(其1)。
图9为例示第一实施方式所涉及的半导体装置的制造工序的图(其2)。
图10为例示第一实施方式所涉及的半导体装置的制造工序的图(其3)。
图11为例示第一实施方式所涉及的半导体装置的制造工序的图(其4)。
图12为例示第一实施方式所涉及的半导体装置的制造工序的图(其5)。
图13为例示在比较例所涉及的半导体装置中接头部的一方倾斜了的状态的图。
图14为例示在第一实施方式所涉及的半导体装置中接头部的一方倾斜了的状态的图。
图15为例示在第一实施方式的改变例2所涉及的半导体装置中接头部的一方倾斜了的状态的图。
图16为例示在第一实施方式的改变例3所涉及的半导体装置中接头部的一方倾斜了的状态的图。
图17为例示在第一实施方式的改变例3所涉及的半导体装置中接头部的一方未倾斜的状态的图。
具体实施方式
以下，参照附图，对用于实施发明的方式进行说明。在各实施方式中，虽然以四个半导体元件(两个IGBT以及两个二极管)被纵横排列的半导体装置为例而进行说明，但并不限定于此。并且，在各附图中，对相同结构部分标记相同符号，并省略其重复的说明。
<第一实施方式>
首先，对第一实施方式所涉及的半导体装置的电路结构进行说明。图1为例示第一实施方式所涉及的半导体装置的电路结构的图。参照图1，第一实施方式所涉及的半导体装置1为具有IGBT10以及20和二极管31以及32的逆变器电路。
在半导体装置1中，IGBT10具有集电极11、发射极12和栅极13。另外，IGBT20具有集电极21、发射极22和栅极23。
IGBT10的集电极11与二极管31的阴极以及高位侧电源端子41a电连接。IGBT10的发射极12与二极管31的阳极电连接。也就是说，二极管31与IGBT10被反并联连接。IGBT10的栅极13与控制极端子46中的至少一个电连接。
IGBT20的发射极22与二极管32的阳极以及低位侧电源端子42a电连接。IGBT20的集电极21与二极管32的阴极电连接。也就是说，二极管32与IGBT20被反并联连接。IGBT20的栅极13与控制极端子47中的至少一个电连接。
另外，IGBT10的发射极12与IGBT20的集电极21电连接，而且与输出端子43a电连接。另外，由于高位侧电源端子41a、低位侧电源端子42a以及输出端子43a与控制极端子46以及47相比被施加高电压，因此，有时将这三个端子称为高压端子。
接下来，对第一实施方式所涉及的半导体装置的结构进行说明。图2为例示第一实施方式所涉及的半导体装置的立体图。图3为例示第一实施方式所涉及的半导体装置的沿着图2的A-A线的剖视图。图4为例示第一实施方式所涉及的半导体装置的沿着图2的B-B线的剖视图。图5为例示第一实施方式所涉及的半导体装置的内部结构的立体图。图6为例示第一实施方式所涉及的半导体装置的沿着图5的C-C线的局部剖视图。图7为例示第一实施方式所涉及的半导体装置的与图6对应的局部仰视图(局部底面图)。
并且，本申请中，在半导体装置1中，将金属板44以及45露出的面设为上表面，将金属板41以及43露出的面设为下表面。而且，将高位侧电源端子41a、低位侧电源端子42a、以及输出端子43a突出的面设为正面。另外，将悬挂引线端子41b、悬挂引线端子43b、控制极端子46、以及控制极端子47突出的面设为背面。另外，将其他面设为侧面。
参照图2～图7，在半导体装置1中，包括高位侧电源端子41a以及悬挂引线端子41b的金属板41、包括低位侧电源端子42a的金属板42、以及包括输出端子43a以及悬挂引线端子43b的金属板43以长度方向朝向大致相同方向(Y方向)的方式而隔开预定的间隔被并列设置。
另外，设置有控制极端子46，所述控制极端子46为，多个金属制的引线端子以使长度方向朝向与金属板41的长度方向大致相同的方向(Y方向)的方式隔开预定的间隔而被并列设置而成。另外，设置有控制极端子47，所述控制极端子47为，多个金属制的引线端子以使长度方向朝向与金属板43的长度方向大致相同的方向(Y方向)的方式隔开预定的间隔而被并列设置而成。
作为金属板41、42以及43、和控制极端子46以及47的材料，分别能够使用例如铜(Cu)、镍(Ni)、铝(Al)等。也可以在金属板41、42以及43、和控制极端子46以及47的各自的表面上实施银(Ag)或金(Au)等的电镀处理。
在金属板41的上表面上，以使集电极11经由锡类的软焊料等导电性的接合材料(未图示)而与金属板41导通的方式安装有IGBT10。并且，由于集电极11为P型，因此，有时将与集电极11连接的金属板41称为P侧。另外，在金属板41的上表面上，以使阴极经由锡类的软焊料等的导电性的接合材料(未图示)而与金属板41导通的方式安装有二极管31。IGBT10以及二极管31在金属板41的长度方向(Y方向)上被排列。
在金属板43的上表面上，以使集电极21经由锡类的软焊料等导电性的接合材料(未图示)而与金属板43导通的方式安装有IGBT20。另外，在金属板43的上表面上，以使阴极经由锡类的软焊料等的导电性的接合材料(未图示)而与金属板43导通的方式安装有二极管32。IGBT20以及二极管32在金属板43的长度方向(Y方向)上被排列。
金属板41的安装IGBT10以及二极管31的部分的厚度(除了高位侧电源端子41a以及悬挂引线端子41b之外的部分的厚度)例如能够被设为2～3mm左右。金属板43的安装IGBT20以及二极管32的部分的厚度(除了输出端子43a以及悬挂引线端子43b之外的部分的厚度)例如能够被设为2～3mm左右。可以将金属板41的安装IGBT10以及二极管31的部分的厚度、和金属板43的安装IGBT20以及二极管32的部分的厚度设为大致相同的厚度。
金属板41的高位侧电源端子41a以及悬挂引线端子41b的厚度也可以薄于金属板41的安装IGBT10以及二极管31的部分的厚度，例如，能够设为0.5mm左右。金属板43的输出端子43a以及悬挂引线端子43b的厚度也可以薄于金属板43的安装IGBT20以及二极管32的部分的厚度，例如，能够设为0.5mm左右。
在IGBT10以及二极管31上，以经由导电性的隔板61(例如，铜等金属块)以及锡类的软焊料等导电性的接合材料而与IGBT10的发射极12以及二极管31的阳极导通的方式配置有金属板44。换言之，在金属板44的下表面与IGBT10以及二极管31的上表面侧的电极之间配置有导电性的隔板61(例如，铜等金属块)。金属板44经由锡类的软焊料等导电性的接合材料(未图示)而与金属板43电连接。
在IGBT20以及二极管32上，以经由导电性的隔板62(例如，铜等金属块)以及锡类的软焊料等的导电性的接合材料而与IGBT20的发射极22以及二极管32的阳极导通的方式配置有金属板45。换言之，在金属板45的下表面与IGBT20以及二极管32的上表面侧的电极之间，配置有导电性的隔板62(例如，铜等金属块)。
在金属板45上，设置有从侧面向金属板44侧突出的接头部45j。另外，在金属板42上，设置有从侧面向控制极端子46以及47侧突出的接头部42j。接头部42j以及接头部45j的各自的厚度例如能够被设为0.5mm左右。
金属板45的接头部45j的下表面与金属板42的接头部42j的上表面以对置的方式被配置，并经由导电性的接合材料81(例如，锡类的软焊料等)而被电连接。并且，由于发射极22为N型，因此，有时将与发射极22连接的金属板42称为N侧。
在接头部45j的下表面的外周部上，为了吸收多余的接合材料81而设置有环状的槽45x。另外，在接头部42j的上表面上，为了吸收多余的接合材料81而设置有槽42x。槽45x的宽度例如能够被设为400～600μm左右。槽45x的深度例如能够被设为200～300μm左右。
虽然在图6等中，槽45x的截面形状为半圆形，但是，槽45x的截面形状也可以不设为半圆形，例如，也可以设为半椭圆形或矩形等。另外，只要能够确保可吸收多余的接合材料81的充分的容积，则槽45x也可以不设为环状。并且，槽45x为本发明所涉及的槽的代表性的一个示例。
接头部42j的顶端上部K(接头部42j的控制极端子46以及47侧的端部的接头部45j侧)经由接合材料81而被固定在俯视观察时与槽45x重叠的位置处(收纳于与槽45x对应的位置处的状态)。并且，M(槽45x的内周侧的区域)表示接头部45j和接头部42j应该被接合的区域(接合材料81应该存在的区域)(以后，设为接合区域M)。
通过设置有槽42x，从而接头部42j的上表面侧成为凸部。因此，能够将接头部42j的顶端上部K换称为凸部的顶端上部K。并且，凸部的后端上部L(凸部的槽42x侧的端部的接头部45j侧)也经由接合材料81而被固定在俯视观察时与槽45x重叠的位置处。
但是，虽然在图7中，除了凸部的顶端上部K(接头部42j的顶端上部K)以及后端上部L以外的部分也被固定在俯视观察时与槽45x重叠的位置处，但是，凸部的顶端上部K以及后端上部L以外的部分并非必须被固定在俯视观察时与槽45x重叠的位置处。
虽然省略了放大图的图示，但是，金属板43以及44也具备与金属板42以及45同样的接头部，金属板44的接头部的下表面经由导电性的接合材料(例如，锡类的软焊料等)而与金属板43的接头部的上表面电连接。通过将金属板43的接头部和金属板44的接头部的结构设为与接头部42j和接头部45j的结构相同，从而能够获得同样的效果(提高了后文所述的接头部42j与接头部45j的连接可靠性)。但是，金属板43以及44被设为，与金属板42相比不易倾斜的结构。
金属板44的厚度例如能够被设为2～3mm左右。金属板45的厚度例如能够被设为2～3mm左右。也可以将金属板44和金属板45设为大致相同的厚度。作为金属板44以及45的材料，例如，能够使用铜(Cu)、镍(Ni)、铝(Al)等。在金属板44以及45的表面上，也可以实施银(Ag)或金(Au)等的电镀处理。
并且，金属板45为本发明所涉及的第一板状部的代表性的一个示例，接头部45j为本发明所涉及的第一接头部的代表性的一个示例。另外，金属板42为本发明所涉及的第二板状部的代表性的一个示例，接头部42j为本发明所涉及的第二接头部的代表性的一个示例。
构成控制极端子46的各金属制的引线端子经由接合引线而与IGBT10的栅极13或温度传感器(未图示)等电连接。构成控制极端子47的各金属制的引线端子经由接合引线而与IGBT20的栅极23或温度传感器(未图示)等电连接。构成控制极端子46以及47的各金属制的引线端子的厚度例如能够被设为0.5mm左右。作为接合引线，例如能够使用金线或铜线等金属线。
IGBT10以及20、二极管31以及32、金属板41～45、控制极端子46以及47、以及接合引线通过密封树脂50而被密封。但是，金属板41以及43的下表面中的至少一部分从密封树脂50的下表面露出。另外，金属板44以及45的上表面的至少一部分从密封树脂50的上表面露出。
另外，金属板41的高位侧电源端子41a、金属板42的低位侧电源端子42a、以及金属板43的输出端子43a的各自的至少一部分从密封树脂50的正面突出。另外，被形成于金属板41的端部处的悬挂引线端子41b、被形成于金属板43的端部处的悬挂引线端子43b、控制极端子46、以及控制极端子47的各自的至少一部分从密封树脂50的背面突出。
排列有IGBT10和IGBT20的第一方向(大致X方向)、与悬挂引线端子41b以及43b和控制极端子46以及47突出的第二方向(大致Y方向)正交。但是，本申请中的正交并非严格意义上的正交，而是指大致正交。例如，由于制造上的偏差等而使第一方向和第二方向从90度偏离了十几度左右的情况也被包含在正交中。
作为密封树脂50的材料，例如能够使用含有填料的环氧树脂类树脂等。密封树脂50的厚度例如能够被设为5mm左右。
金属板41～45的从密封树脂50露出的部分能够有助于IGBT10以及20等所产生的热向外部的排放。金属板41～45例如能够由引线框架进行制作。并且，悬挂引线端子41b以及43b为，在金属板41以及43由引线框架进行制作时与引线框架的主体(未图示)连接，并在通过密封树脂50而进行密封后从引线框架的主体(未图示)上被切断的部分。
接下来，对第一实施方式所涉及的半导体装置的制造方法进行说明。图8～图12为例示第一实施方式所涉及的半导体装置的制造工序的图。
首先，在图8所示的工序中，准备通过冲压加工等而被设为预定形状的引线框架40。而且，在引线框架40上的预定位置上，经由锡类的软焊料等导电性的接合材料(未图示)而安装IGBT10以及20和二极管31以及32(未图示；参照图3以及图4)。
而且，在IGBT10以及二极管31上安装导电性的隔板61(未图示；参照图3以及图4)，在IGBT20以及二极管32上安装导电性的隔板62(未图示；参照图3以及图4)。而且，在导电性的隔板61的上表面、导电性的隔板62的上表面、引线框架40的成为金属板42的部分的接头部42j的上表面、以及引线框架40的成为金属板43的部分的接头部的上表面上，涂布未固化的导电性的接合材料81(例如，锡类的软焊料等)。
接下来，在图9所示的工序中，在实施引线粘合后，在隔板61上经由接合材料81(未图示)而安装金属板44。另外，在隔板62上经由接合材料81(未图示)而安装金属板45。之后，涂布底漆涂料(聚酰胺树脂等)。
在该工序中，引线框架40的成为金属板42的部分的接头部42j的上表面、与金属板45的接头部45j的下表面经由导电性的接合材料81而被接合(参照图6以及图7)。另外，引线框架40的成为金属板43的部分的接头部的上表面、与金属板44的接头部的下表面经由导电性的接合材料81而被接合。
接下来，在图10所示的工序中实施模压成形，并形成密封树脂50。接下来，在图11所示的工序中，对密封树脂50的上表面进行切削，从而使金属板44以及45的上表面从密封树脂50露出。接下来，在图12所示的工序中，在预定位置处切断引线框架40，从而制作出金属板41～43、高位侧电源端子41a、低位侧电源端子42a、输出端子43a、悬挂引线端子41b以及43b、以及控制极端子46以及47。由此，完成了图2等所示的半导体装置1。
在图9所示的工序中，存在接头部42j和接头部45j如图13所示那样不平行的情况。这是因为，由于引线框架40的成为金属板42的部分为悬臂结构(由于仅单侧与引线框架40连结)，因此接头部42j的倾斜度的偏差较大。
在假设当设为接头部42j的顶端上部K不位于俯视观察时与槽45x重叠的位置处时如图13所示接头部42j倾斜而与接头部45j接触的情况下，会出现接合材料81不存在的区域N，从而无法使接头部42j和接头部45j在整个接合区域M内进行接合。另外，在顶端上部K的附近(在图13中，为顶端上部K的右侧)，几乎不存在接合材料81，也未形成圆角。
由此，难以使接头部42j和接头部45j牢固地接合，从而无法确保接合部(对接头部42j和接头部45j进行接合的接合材料81)的耐久性。例如，由于在接合材料81中产生裂缝的情况下，裂缝从接合材料81的端部开始产生，因此，当在顶端上部K的附近(在图13中，为顶端上部K的右侧)几乎不存在接合材料81时，裂缝易于从该部分产生。
另一方面，在本实施方式中，在接头部45j的下表面与接头部42j的上表面对置的部分处，设置有作为确保接头部42j的顶端上部K与接头部45j的下表面之间的接合材料81的厚度的接合材料厚度确保单元的槽45x。
而且，由于接头部42j的顶端上部K位于俯视观察时与槽45x重叠的位置处，因此，即使在如图14那样接头部42j倾斜而与接头部45j接触的情况下，顶端上部K也在槽45x内与接头部45j接合。由此，能够使接头部42j和接头部45j在整个接合区域M内进行接合。另外，即使在顶端上部K的附近，接合材料81也能够确保预定的厚度。另外，在顶端上部K与槽45x的内壁面之间形成有圆角。
另外，由于接头部42j的后端上部L位于俯视观察时与槽45x重叠的位置处，因此，即使在后端上部L的附近，接合材料81也能够确保预定的厚度。另外，在后端上部L与槽45x的内壁面之间，形成有圆角。
由此，能够使接头部42j和接头部45j牢固地进行接合，例如，即使在半导体装置1被反复放置于低温环境和高温环境中的情况下，也能够降低接合部(对接头部42j和接头部45j进行接合的接合材料81)恶化的可能性(裂缝的产生等)。即，能够提高接头部42j与接头部45j的连接可靠性。
并且，在本实施方式所涉及的结构中，即使接合材料81从槽45x中溢出，也不会有问题。由图4可知，这是因为，由于在金属板45与二极管32之间具有隔板62，从而将二极管32接合在金属板43上的接合材料与接合材料81不处于同一平面内，因此，即使假设溢出，也不会对二极管32造成影响。由于金属板42以及45与隔板62为相同电位，因此，即使假设接合材料81附着于隔板62上，也不会有问题。
<第一实施方式的改变例1>
也可以在包含槽45x的内壁面的接头部45j的下表面上，形成与金属板42相比接合材料81的润湿性良好的金属膜。例如，如果金属板42为铜，则作为金属膜，能够使用与铜相比接合材料81的润湿性良好的金膜。金膜例如能够通过电镀法来形成。也可以在金膜的下方设置镍膜或钯膜等。
如此，通过在包含槽45x的内壁面的接头部45j的下表面上形成与金属板42相比接合材料81的润湿性良好的金属膜，从而能够使接合材料81易于集中在槽45x内。因此，槽45x内的接合材料81易于确保预定的厚度，并能够进一步提高接头部42j与接头部45j之间的连接可靠性。
<第一实施方式的改变例2>
图15为例示在第一实施方式的改变例2所涉及的半导体装置中接头部的一侧倾斜了的状态的图。在第一实施方式的改变例2所涉及的半导体装置中，在接头部45j上，代替槽45x而设置突起部45y。突起部45y例如能够以环状而设置于接头部45j的下表面上。
接头部42j的顶端上部K经由接合材料81而被固定在俯视观察时与设置有突起部45y的区域相比靠接头部45j的下表面的外边缘侧。突起部45y的宽度例如能够被设为400～600μm左右。突起部45y的高度例如能够被设为200～300μm左右。
如此，在本实施方式中，在接头部45j的下表面与接头部42j的上表面对置的部分处，设置有作为接合材料厚度确保单元的突起部45y，该接合材料厚度确保单元用于确保接头部42j的顶端上部K与接头部45j的下表面之间的接合材料81的厚度。
而且，由于接头部42j的顶端上部K位于俯视观察时与设置有突起部45y的区域相比靠接头部45j的下表面的外边缘侧，因此，即使在如图15那样接头部42j倾斜而与接头部45j接触的情况下，顶端上部K也在与突起部45y相比靠外侧的区域内与接头部45j接合。由此，能够使接头部42j和接头部45j在整个接合区域M内接合。另外，即使在顶端上部K的附近，接合材料81也能够确保预定的厚度。另外，在顶端上部K与接头部45j的下表面之间形成有圆角。
另外，由于接头部42j的后端上部L位于俯视观察时与设置有突起部45y的区域相比靠接头部45j的下表面的外边缘侧，因此，即使在后端上部L的附近，接合材料81也能够确保预定的厚度。另外，在后端上部L与接头部45j的下表面之间形成有圆角。
由此，除了第一实施方式的效果之外，还能够实现以下的效果。即，由于即使在接头部42j与接头部45j大致平行的情况下，在接头部42j与接头部45j之间确保有突起部45y的高度以上的间隙并且填充有接合材料81，因此，能够将接合材料81的厚度总是设为大致固定的厚度以上。
另外，与第一实施方式的改变例1同样地，更优选为，在包含突起部45y的外壁面的接头部45j的下表面上，形成与金属板42相比接合材料81的润湿性良好的金属膜。并且，即使代替在金属板45的接头部45j的下表面上设置突起部45y而在金属板42的接头部42j的上表面上设置突起部，也能够获得同样的效果。
<第一实施方式的改变例3>
图16为例示在第一实施方式的改变例3所涉及的半导体装置中接头部的一侧倾斜了的状态的图。图17为例示在第一实施方式的改变例3所涉及的半导体装置中接头部的一侧未倾斜的状态的图。
在第一实施方式的改变例3所涉及的半导体装置中，接头部45j的下表面为平坦而并未设置槽或突起部。取代于此，接合材料81含有多个金属球85。换言之，在接合材料81中分散有多个金属球85。作为金属85，例如，能够使用直径为40～100μm左右的镍球等。但是，金属球85也可以并非完全为球形。
通过使接合材料81含有多个金属球85，从而即使在如图16那样接头部42j倾斜了的情况下，接头部42j和接头部45j也不会接触，从而确保了金属球85的直径的程度上的间隙。而且，在间隙中填充有接合材料81。另外，即使在如图17那样接头部42j与接头部45j大致平行的情况下，接头部42j与接头部45j也不会接触，从而确保了金属球85的直径的程度上的间隙。而且，在间隙中填充有接合材料81。
即，在图16以及图17中的任意一种情况下，均通过金属球85而在接头部42j的顶端上部K与接头部45j的下表面之间确保有间隙，并且在间隙中填充有接合材料81。另外，通过金属球85，从而在接头部42j的后端上部L与接头部45j的下表面之间确保有间隙，并且在间隙中填充有接合材料81。另外，在接头部42j的顶端上部K与接头部45j的下表面之间、以及接头部42j的后端上部L与接头部45j的下表面之间形成有圆角。
如此，在本实施方式中，在接头部45j的下表面与接头部42j的上表面对置的部分处，设置有作为接合材料厚度确保单元的金属球85(以分散于接合材料81中的状态存在)，该接合材料厚度确保单元用于确保接头部42j的顶端上部K与接头部45j的下表面之间的接合材料81的厚度。
由此，除了第一实施方式的效果之外，还能够实现以下的效果。即，由于即使在接头部42j与接头部45j大致平行的情况下，在接头部42j与接头部45j之间也确保了金属球85的直径以上的间隙并且填充有接合材料81，因此，能够将接合材料81的厚度总是设为大致固定的厚度以上。另外，在金属球85的周围，接合材料81的润湿性为良好。由此，能够进一步提高接头部42j与接头部45j的连接可靠性。
另外，与第一实施方式的改变例1同样地，更优选为，在接头部45j的下表面上形成与金属板42相比接合材料81的润湿性良好的金属膜。
以上，虽然对优选的实施方式及其改变例进行了详细的说明，但是，并不限定于上述的实施方式及其改变例，在不脱离权利要求书所记载的范围的情况下，能够对上述的实施方式及其改变例追加各种各样的改变以及置换。
例如，虽然在上述实施方式中，列举出多个半导体元件(IGBT以及二极管)被纵横地排列的半导体装置，但是，本发明例如能够应用于排列有两个使IGBT以及二极管一体化的半导体元件的半导体装置等中。或者，例如也可以将本发明应用于具有一个使IGBT以及二极管一体化的半导体元件的半导体装置等中。
另外，上述实施方式及其改变例也可以进行适当的组合。
本国际申请要求2014年3月10日提交的日本国专利申请2014-046595号的优先权，并且本申请引用了日本国专利申请2014-046595号的全部内容。
符号说明
1 半导体装置；
10、20 IGBT；
11、21 集电极；
12、22 发射极；
13、23 栅极；
31、32 二极管；
40 引线框架；
41a 高位侧电源端子；
41b、43b 悬挂引线端子；
41、42、43、44、45 金属板；
42a 低位侧电源端子；
42j、45j 接头部；
42x、45x 槽；
43a 输出端子；
45y 突起部；
46、47 控制极端子；
50 密封树脂；
61、62 隔板；
81 接合材料；
85 金属球。

Claims (5)

1.一种半导体装置，具有：
半导体元件；
第一板状部，其与所述半导体元件的上表面侧的电极电连接，并具备从侧面突起的第一接头部，且由导电体构成；
第二板状部，其具备从侧面突起的第二接头部，且由导电体构成，
所述第一接头部的下表面与所述第二接头部的上表面以对置的方式被配置，且经由导电性的接合材料而被电连接，
在所述第一接头部的下表面与所述第二接头部的上表面对置的部分处，设置有确保所述第二接头部的顶端上部和所述第一接头部的下表面之间的所述接合材料的厚度的接合材料厚度确保单元，
所述接合材料厚度确保单元为，被设置于所述第一接头部的下表面上的截面形状呈圆角形状的槽，
所述槽被设置为环状，
所述第二接头部的顶端上部经由所述接合材料而被固定在俯视观察时与所述槽重叠的位置处，所述接合材料进入所述槽内，并在所述第二接头部的顶端上部与所述槽的内壁面之间形成有圆角，
所述第二接头部的上表面侧为凸部，
所述凸部的顶端上部以及所述凸部的后端上部经由所述接合材料而被固定在俯视观察时与所述槽重叠的位置处。
2.如权利要求1所述的半导体装置，具有：
第二半导体元件；
第三板状部，其与所述第二半导体元件的上表面侧的电极电连接，并具备从侧面突起的第三接头部，且由导电体构成；
第四板状部，其具备从侧面突起的第四接头部，且由导电体构成。
3.如权利要求2所述的半导体装置，其中，
所述第三接头部的下表面和所述第四接头部的上表面以对置的方式配置，并经由导电性的接合材料而被电连接，
在所述第三接头部的下表面与所述第四接头部的上表面对置的部分处，设置有确保所述第四接头部的顶端上部与所述第三接头部的下表面之间的所述接合材料的厚度的接合材料厚度确保单元。
4.如权利要求2或3所述的半导体装置，其中，
所述第二板状部具备低位侧电源端子，所述第四板状部具备输出端子。
5.如权利要求1至3中的任意一项所述的半导体装置，其中，
在所述第一板状部的下表面与所述半导体元件的上表面侧的电极之间配置有金属块。
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