CN106032406B - polymer, insulating film and flexible copper foil substrate - Google Patents
polymer, insulating film and flexible copper foil substrate Download PDFInfo
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- 229920000642 polymer Polymers 0.000 title claims abstract description 51
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000011889 copper foil Substances 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 125000000962 organic group Chemical group 0.000 claims abstract description 38
- 150000004985 diamines Chemical class 0.000 claims abstract description 36
- 125000003118 aryl group Chemical group 0.000 claims abstract description 18
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims abstract description 17
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims abstract description 12
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 239000000178 monomer Substances 0.000 abstract description 26
- 239000010408 film Substances 0.000 description 82
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 35
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 24
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 19
- 229920005575 poly(amic acid) Polymers 0.000 description 19
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- XPAQFJJCWGSXGJ-UHFFFAOYSA-N 4-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=C(N)C=C1 XPAQFJJCWGSXGJ-UHFFFAOYSA-N 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 13
- 239000007787 solid Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- SXGMVGOVILIERA-UHFFFAOYSA-N (2R,3S)-2,3-diaminobutanoic acid Natural products CC(N)C(N)C(O)=O SXGMVGOVILIERA-UHFFFAOYSA-N 0.000 description 11
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 239000012299 nitrogen atmosphere Substances 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 7
- OXIKYYJDTWKERT-UHFFFAOYSA-N [4-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCC(CN)CC1 OXIKYYJDTWKERT-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- ABPUBUORTRHHDZ-UHFFFAOYSA-N [4-(aminomethyl)-3-bicyclo[2.2.1]heptanyl]methanamine Chemical compound C1CC2(CN)C(CN)CC1C2 ABPUBUORTRHHDZ-UHFFFAOYSA-N 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 6
- 150000003949 imides Chemical class 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000004227 thermal cracking Methods 0.000 description 6
- CFEKOKRYQRODRZ-UHFFFAOYSA-N 2-cyclohexylethane-1,1-diamine Chemical compound NC(N)CC1CCCCC1 CFEKOKRYQRODRZ-UHFFFAOYSA-N 0.000 description 5
- QLBRROYTTDFLDX-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCC(CN)C1 QLBRROYTTDFLDX-UHFFFAOYSA-N 0.000 description 5
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 3
- -1 Heptane (bis(aminomethyl)bicyclo[2.2.1]heptane) Chemical compound 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 2
- 238000003556 assay Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 2
- 125000005462 imide group Chemical group 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- YDYSEBSNAKCEQU-UHFFFAOYSA-N 2,3-diamino-n-phenylbenzamide Chemical compound NC1=CC=CC(C(=O)NC=2C=CC=CC=2)=C1N YDYSEBSNAKCEQU-UHFFFAOYSA-N 0.000 description 1
- HFACYWDPMNWMIW-UHFFFAOYSA-N 2-cyclohexylethanamine Chemical compound NCCC1CCCCC1 HFACYWDPMNWMIW-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- FXPVLLWYUHIDLH-UHFFFAOYSA-N NCC1CCC(CC1)CN.NCC1CCC(CC1)CN Chemical compound NCC1CCC(CC1)CN.NCC1CCC(CC1)CN FXPVLLWYUHIDLH-UHFFFAOYSA-N 0.000 description 1
- XZAHJRZBUWYCBM-UHFFFAOYSA-N [1-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1(CN)CCCCC1 XZAHJRZBUWYCBM-UHFFFAOYSA-N 0.000 description 1
- TVCQRYPFBRXZQP-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CC(CCC1)CN.C1(CC(CCC1)CN)CN TVCQRYPFBRXZQP-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000004202 aminomethyl group Chemical group [H]N([H])C([H])([H])* 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 150000003931 anilides Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001244 carboxylic acid anhydrides Chemical group 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- QVQGTNFYPJQJNM-UHFFFAOYSA-N dicyclohexylmethanamine Chemical compound C1CCCCC1C(N)C1CCCCC1 QVQGTNFYPJQJNM-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000006358 imidation reaction Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
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Landscapes
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
技术领域technical field
本发明是有关于一种聚合物、绝缘膜以及软性铜箔基板,且特别是有关于具低介电常数及低介电损耗的聚合物、包括所述聚合物的绝缘膜以及包括所述绝缘膜的软性铜箔基板。The present invention relates to a polymer, an insulating film and a flexible copper foil substrate, and in particular to a polymer with low dielectric constant and low dielectric loss, an insulating film comprising the polymer, and a polymer comprising the Flexible copper foil substrate with insulating film.
背景技术Background technique
随着电子产品逐渐朝向轻薄的趋势发展,软性电路板的使用需求量也大幅提升。软性电路板的主要上游材料为软性铜箔基板,其通常是通过将聚酰亚胺聚合物涂布或贴合于铜箔上而制成。目前产业中所使用的聚酰亚胺聚合物具有良好耐热性及尺寸安定性,但介电性质不佳,使得其应用范围受到限制。因此,如何降低聚酰亚胺聚合物的介电常数使其同时具有良好介电性质、热稳定性及尺寸安定性是目前此领域极欲发展的目标。With the gradual development of electronic products towards thinner and lighter, the demand for flexible circuit boards has also increased significantly. The main upstream material of flexible circuit board is flexible copper foil substrate, which is usually made by coating or laminating polyimide polymer on copper foil. The polyimide polymer currently used in the industry has good heat resistance and dimensional stability, but its dielectric properties are poor, which limits its application range. Therefore, how to reduce the dielectric constant of the polyimide polymer so that it has good dielectric properties, thermal stability and dimensional stability is an extremely desirable goal in this field.
发明内容Contents of the invention
本发明提供一种聚合物、绝缘膜以及软性铜箔基板。The invention provides a polymer, an insulating film and a flexible copper foil substrate.
本发明提供一种聚合物,其包括结构新颖的酰亚胺重复单元且包括所述聚合物的绝缘膜具有低介电常数及低介电损耗,而所述绝缘膜适合应用于软性铜箔基板中。The present invention provides a polymer comprising a novel imide repeating unit and an insulating film comprising the polymer has low dielectric constant and low dielectric loss, and the insulating film is suitable for flexible copper foil substrate.
本发明的聚合物包括至少25mol%的以式1表示的重复单元:The polymers of the present invention comprise at least 25 mol% of repeating units represented by formula 1:
其中Ar为衍生自含有芳香族基的四羧酸二酐的四价有机基,以及A为衍生自含有环己烷基的二胺的二价有机基,且二价有机基的碳数为8至18。wherein Ar is a tetravalent organic group derived from a tetracarboxylic dianhydride containing an aromatic group, and A is a divalent organic group derived from a diamine containing a cyclohexane group, and the carbon number of the divalent organic group is 8 to 18.
在本发明的一实施方式中,上述以式1表示的重复单元的数目在10至2000之间。In one embodiment of the present invention, the number of repeating units represented by the above formula 1 is between 10 and 2000.
在本发明的一实施方式中,上述的Ar包括及中的至少一种,且B包括单键、-O-、-CH2-、-C(CH3)2-、-SO2-或-CO-。In one embodiment of the present invention, the above-mentioned Ar includes and At least one of, and B includes a single bond, -O-, -CH2-, -C(CH3)2-, -SO2- or -CO-.
在本发明的一实施方式中,上述的A包括 及中的至少一种。In one embodiment of the present invention, the above-mentioned A includes and at least one of the
本发明的聚合物包括以式2表示的结构:Polymers of the present invention include structures represented by Formula 2:
其中Ar为衍生自含有芳香族基的四羧酸二酐的四价有机基、A为衍生自含有环己烷基的二胺的二价有机基,且二价有机基的碳数为8至18、Ψ为其他重复单元以及0.25≤X≤1。Where Ar is a tetravalent organic group derived from a tetracarboxylic dianhydride containing an aromatic group, A is a divalent organic group derived from a diamine containing a cyclohexane group, and the carbon number of the divalent organic group is from 8 to 18. Ψ is other repeating units and 0.25≤X≤1.
在本发明的一实施方式中,上述的Ar包括及中的至少一种,且B包括单键、-O-、-CH2-、-C(CH3)2-、-SO2-或-CO-。In one embodiment of the present invention, the above-mentioned Ar includes and At least one of, and B includes a single bond, -O-, -CH2-, -C(CH3)2-, -SO2- or -CO-.
在本发明的一实施方式中,上述的A包括 及中的至少一种。In one embodiment of the present invention, the above-mentioned A includes and at least one of the
在本发明的一实施方式中,上述的Ψ以式3表示:In one embodiment of the present invention, the above-mentioned Ψ is represented by formula 3:
其中Φ为衍生自含有芳香族基或环状脂肪族基的二胺的二价有机基、Ar包括及中的至少一种,且B包括单键、-O-、-CH2-、-C(CH3)2-、-SO2-或-CO-。Where Φ is a divalent organic group derived from a diamine containing an aromatic group or a cycloaliphatic group, Ar includes and At least one of, and B includes a single bond, -O-, -CH2-, -C(CH3)2-, -SO2- or -CO-.
在本发明的一实施方式中,上述的Φ包括及中的至少一种。In one embodiment of the present invention, the above Φ includes and at least one of the
在本发明的一实施方式中,上述的Φ包括及且与的摩尔比为9:1至1:9。In one embodiment of the present invention, the above Φ includes and and and The molar ratio is 9:1 to 1:9.
本发明的绝缘膜包括前述的聚合物。The insulating film of the present invention includes the aforementioned polymers.
在本发明的一实施方式中,上述的绝缘膜的介电常数为2.8至3.5、以及介电损耗为0.005至0.014。In one embodiment of the present invention, the dielectric constant of the insulating film is 2.8 to 3.5, and the dielectric loss is 0.005 to 0.014.
本发明的软性铜箔基板包括铜箔以及前述的绝缘膜。绝缘膜配置在铜箔上。The flexible copper foil substrate of the present invention includes copper foil and the aforementioned insulating film. The insulating film is arranged on the copper foil.
在本发明的一实施方式中,上述软性铜箔基板还包括粘着层,配置于铜箔与绝缘膜之间。In one embodiment of the present invention, the flexible copper foil substrate further includes an adhesive layer disposed between the copper foil and the insulating film.
基于上述,本发明所提出的聚合物通过采用具特定结构及特定比例的二胺单体以及含有芳香族基的二酐单体来制造,使得聚合物及包括其的绝缘膜能够同时具有低介电常数、低介电损耗及高热稳定性。Based on the above, the polymer proposed by the present invention is manufactured by using a diamine monomer with a specific structure and a specific ratio and a dianhydride monomer containing an aromatic group, so that the polymer and the insulating film including it can have low dielectric properties at the same time. Electrical constant, low dielectric loss and high thermal stability.
为让本发明的上述特征和优点能更明显易懂,下文特举实施方式作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, specific embodiments are described below in detail.
具体实施方式Detailed ways
在本文中,由“一数值至另一数值”表示的范围,是一种避免在说明书中一一列举该范围中的所有数值的概要性表示方式。因此,某一特定数值范围的记载,涵盖该数值范围内的任意数值以及由该数值范围内的任意数值界定出的较小数值范围,如同在说明书中明文写出该任意数值和该较小数值范围一样。Herein, a range indicated by "one value to another value" is a general representation to avoid enumerating all values in the range in the specification. Therefore, the description of a specific numerical range covers any numerical value in the numerical range and the smaller numerical range bounded by any numerical value in the numerical range, as if the arbitrary numerical value and the smaller numerical value are expressly written in the specification. same range.
在本文中,有时以键线式(skeleton formula)表示聚合物或基团的结构。这种表示法可以省略碳原子、氢原子以及碳氢键。当然,结构式中有明确示出原子或原子基团的,则以示出的为准。Herein, the structure of a polymer or a group is sometimes represented by a skeleton formula. This notation can omit carbon atoms, hydrogen atoms, and carbon-hydrogen bonds. Of course, where atoms or atomic groups are explicitly shown in the structural formulas, the shown ones shall prevail.
本发明的一实施方式提供一种聚合物,其包括至少25mol%的以式1表示的重复单元:One embodiment of the present invention provides a polymer comprising at least 25 mol% of repeating units represented by formula 1:
在上述式1中,Ar为衍生自含有芳香族基的四羧酸二酐的四价有机基。也就是说,Ar为含有芳香族基的四羧酸二酐中除了2个羧酸酐基(-(CO)2O)以外的残基。在本文中,所述含有芳香族基的四羧酸二酐也称为二酐单体。另外,在本实施方式中,制备式1所示的重复单元时,可采用一种二酐单体或多种二酐单体。In the above formula 1, Ar is a tetravalent organic group derived from an aromatic group-containing tetracarboxylic dianhydride. That is, Ar is a residue other than two carboxylic anhydride groups (—(CO) 2 O) in the aromatic group-containing tetracarboxylic dianhydride. Herein, the aromatic group-containing tetracarboxylic dianhydride is also referred to as a dianhydride monomer. In addition, in this embodiment, when preparing the repeating unit represented by Formula 1, one kind of dianhydride monomer or multiple kinds of dianhydride monomers can be used.
具体而言,Ar包括及中的至少一种,且B包括单键、-O-、-CH2-、-C(CH3)2-、-SO2-或-CO-。也就是说,所述含有芳香族基的四羧酸二酐例如是均苯四甲酸二酐(1,2,4,5-Benzenetetracarboxylic anhydride,简称PMDA)、3,3',4,4'-联苯四羧酸二酐(3,3',4,4'-Biphenyltetracarboxylic dianhydride,简称BPDA)、4,4'-氧双邻苯二甲酸酐(Bis-(3-phthalyl anhydride)ether,简称ODPA)、3,3',4,4'-二苯甲酮四甲酸二酐(3,3',4,4'-Benzophenonetetracarboxylic dianhydride,简称BTDA)。Specifically, Ar includes and and B includes a single bond, -O-, -CH 2 -, -C(CH 3 ) 2 -, -SO 2 - or -CO-. That is to say, the tetracarboxylic dianhydride containing aromatic group is, for example, pyromellitic dianhydride (1,2,4,5-Benzenetetracarboxylic anhydride, PMDA for short), 3,3',4,4'- Biphenyltetracarboxylic dianhydride (3,3',4,4'-Biphenyltetracarboxylic dianhydride, BPDA for short), 4,4'-oxydiphthalic anhydride (Bis-(3-phthalyl anhydride)ether, ODPA for short ), 3,3',4,4'-benzophenone tetracarboxylic dianhydride (3,3',4,4'-Benzophenonetetracarboxylic dianhydride, BTDA for short).
当式1所示的重复单元含有衍生自含有芳香族基的四羧酸二酐的四价有机基时,可得使聚合物具有高热稳定性。另外,由于上述所列的含有芳香族基的四羧酸二酐的价格便宜,故通过使用该些含有芳香族基的四羧酸二酐不但聚合物能够具有符合市场需求的性质,其制造成本也可降低,使得具有工业化价值。When the repeating unit represented by Formula 1 contains a tetravalent organic group derived from an aromatic group-containing tetracarboxylic dianhydride, high thermal stability can be imparted to the polymer. In addition, because the price of the tetracarboxylic dianhydrides containing aromatic groups listed above is cheap, so by using these tetracarboxylic dianhydrides containing aromatic groups, not only the polymer can have the properties that meet the market demand, but its manufacturing cost It can also be reduced, making it of industrial value.
在上述式1中,A为衍生自含有环己烷基的二胺的二价有机基,且二价有机基的碳数为8至18,较佳为8至16。也就是说,A为含有环己烷基的二胺中除了2个氨基(-NH2)以外的残基。在本文中,所述含有环己烷基的二胺也称为二胺单体。另外,在本实施方式中,制备式1所示的重复单元时,可采用一种二胺单体或多种二胺单体。In the above formula 1, A is a divalent organic group derived from a diamine containing a cyclohexane group, and the carbon number of the divalent organic group is 8-18, preferably 8-16. That is, A is a residue other than two amino groups (—NH 2 ) in the cyclohexane group-containing diamine. Herein, the diamine containing a cyclohexane group is also referred to as a diamine monomer. In addition, in this embodiment, when preparing the repeating unit represented by Formula 1, one type of diamine monomer or multiple types of diamine monomers may be used.
具体而言,A包括 及中的至少一种。也就是说,所述含有环己烷基的二胺例如是4,4'-二氨基二环己基甲烷(4,4'-Diaminodicyclohexyl methane,简称MBCHA)、1,3-二(氨甲基)环己烷(1,3-Di(aminomethyl)cyclohexane)、1,4-二(氨甲基)环己烷(1,4-Di(aminomethyl)cyclohexane)、双(氨甲基)双环[2.2.1]庚烷(bis(aminomethyl)bicyclo[2.2.1]heptane)、二氨甲基环己基甲烷(4,4'-Methylenebis(2-methylcyclohexylamine))。Specifically, A includes and at least one of the That is to say, the diamine containing a cyclohexane group is, for example, 4,4'-diaminodicyclohexyl methane (4,4'-Diaminodicyclohexyl methane, MBCHA for short), 1,3-bis(aminomethyl) Cyclohexane (1,3-Di(aminomethyl)cyclohexane), 1,4-bis(aminomethyl)cyclohexane (1,4-Di(aminomethyl)cyclohexane), bis(aminomethyl)bicyclo[2.2. 1] Heptane (bis(aminomethyl)bicyclo[2.2.1]heptane), diaminomethylcyclohexylmethane (4,4'-Methylenebis(2-methylcyclohexylamine)).
值得一提的是,由于4,4'-二氨基二环己基甲烷、1,3-二(氨甲基)环己烷、1,4-二(氨甲基)环己烷、双(氨甲基)双环[2.2.1]庚烷或二氨甲基环己基甲烷具有低介电常数、低介电损耗及良好热稳定性的性质,聚合物通过包括含有衍生自4,4'-二氨基二环己基甲烷、1,3-二(氨甲基)环己烷、1,4-二(氨甲基)环己烷、双(氨甲基)双环[2.2.1]庚烷及二氨甲基环己基甲烷中的至少一种的二价有机基的式1所示的重复单元,不但可得使其具有高热稳定性,还可调控其介电常数及介电损耗。详细而言,与结构中未含有衍生自4,4'-二氨基二环己基甲烷、1,3-二(氨甲基)环己烷、1,4-二(氨甲基)环己烷、双(氨甲基)双环[2.2.1]庚烷及二氨甲基环己基甲烷的二价有机基的聚合物相比,结构中含有衍生自4,4'-二氨基二环己基甲烷、1,3-二(氨甲基)环己烷、1,4-二(氨甲基)环己烷、双(氨甲基)双环[2.2.1]庚烷及二氨甲基环己基甲烷中的至少一种的二价有机基的聚合物具有较低的介电常数及介电损耗。It is worth mentioning that since 4,4'-diaminodicyclohexylmethane, 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, bis(ammonia Methyl)bicyclo[2.2.1]heptane or diaminomethylcyclohexylmethane has the properties of low dielectric constant, low dielectric loss and good thermal stability, and the polymer is derived from 4,4'-di Aminodicyclohexylmethane, 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, bis(aminomethyl)bicyclo[2.2.1]heptane and di The repeating unit represented by formula 1 of at least one divalent organic group in aminomethylcyclohexylmethane can not only obtain high thermal stability, but also control its dielectric constant and dielectric loss. In detail, the structure does not contain the derivatives derived from 4,4'-diaminodicyclohexylmethane, 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane , bis(aminomethyl)bicyclo[2.2.1]heptane and diaminomethylcyclohexylmethane polymers with divalent organic groups, the structure contains 4,4'-diaminodicyclohexylmethane , 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, bis(aminomethyl)bicyclo[2.2.1]heptane and diaminomethylcyclohexyl The polymer of at least one divalent organic group in methane has a relatively low dielectric constant and dielectric loss.
另外,如上所述,式1所示的重复单元为由二酐单体及二胺单体进行酰亚胺化反应而得的酰亚胺重复单元。详细而言,所述酰亚胺化反应是在溶剂中进行,所述溶剂例如是N-甲基-2-吡咯烷酮(NMP)、N,N-二甲基乙酰胺(N,N-dimethylacetamide,DMAc)、二甲基亚砜(dimethyl sulfoxide,DMSO)、二甲基甲酰胺(dimethylformamide,DMF)、六甲基磷酰胺(hexamethylphosphoramide)或间甲酚(m-cresol)。另外,所述酰亚胺化反应的酰亚胺化比率为100%。In addition, as described above, the repeating unit represented by Formula 1 is an imide repeating unit obtained by imidating a dianhydride monomer and a diamine monomer. In detail, the imidization reaction is carried out in a solvent, such as N-methyl-2-pyrrolidone (NMP), N,N-dimethylacetamide (N,N-dimethylacetamide, DMAc), dimethyl sulfoxide (DMSO), dimethylformamide (DMF), hexamethylphosphoramide or m-cresol. In addition, the imidization rate of the said imidation reaction was 100%.
另外,在本实施方式中,以式1表示的重复单元的数目在10至2000之间,较佳在20至1500之间。In addition, in this embodiment, the number of repeating units represented by formula 1 is between 10 and 2000, preferably between 20 and 1500.
本发明的另一实施方式提供一种聚合物,其包括以式2表示的结构:Another embodiment of the present invention provides a polymer comprising a structure represented by Formula 2:
在上述式2中,Ar的定义与式1中的Ar的定义相同,且A的定义与式1中的A的定义相同。从另一观点而言,式2表示的结构中含有式1表示的重复单元。In the above formula 2, the definition of Ar is the same as that of Ar in formula 1, and the definition of A is the same as that of A in formula 1. From another point of view, the structure represented by Formula 2 contains the repeating unit represented by Formula 1.
在上述式2中,Ψ为其他重复单元。也就是说,Ψ为不同于式1表示的重复单元的重复单元。详细而言,Ψ可以是以式3表示的重复单元:In the above formula 2, Ψ is another repeating unit. That is, Ψ is a repeating unit other than the repeating unit represented by Formula 1. In detail, Ψ may be a repeating unit represented by Formula 3:
在上述式3中,Ar的定义与式1中的Ar的定义相同。In the above formula 3, the definition of Ar is the same as that of Ar in formula 1.
在上述式3中,Φ为衍生自含有芳香族基或环状脂肪族基的二胺的二价有机基。也就是说,Φ为衍生自不含有环己烷基的二胺的二价有机基。另外,在本实施方式中,制备式3所示的其他重复单元时,可采用一种二胺单体或多种二胺单体。In the above formula 3, Φ is a divalent organic group derived from diamine containing an aromatic group or a cycloaliphatic group. That is, Φ is a divalent organic group derived from a diamine not containing a cyclohexane group. In addition, in this embodiment, when preparing other repeating units represented by formula 3, one kind of diamine monomer or multiple kinds of diamine monomers can be used.
具体而言,Φ包括及中的至少一种。也就是说,所述含有芳香族基或环状脂肪族基的二胺例如是对苯二胺(p-Phenylenediamine,简称PDA)、4,4'-二胺基苯酰基苯胺(4,4'-Diaminobenzanilide,简称DABA)。Specifically, Φ includes and at least one of the That is to say, the diamines containing aromatic groups or cyclic aliphatic groups are, for example, p-phenylenediamine (p-Phenylenediamine, PDA for short), 4,4'-diaminobenzoanilide (4,4' -Diaminobenzanilide, referred to as DABA).
值得说明的是,式3所示的其他重复单元通过含有衍生自对苯二胺和/或4,4'-二胺基苯酰基苯胺的二价有机基,使得其分子间作用力增强。详细而言,对苯二胺具有π电子系统且具有良好的对称性,通过含有衍生自对苯二胺的二价有机基,使得分子间的π-π堆叠力(π-πstacking force)可增强,从而形成π-π堆叠(π-πstacking)结构;而4,4'-二胺基苯酰基苯胺具有属于氢结合基团的酰胺基,使得当式3所示的其他重复单元含有衍生自4,4'-二胺基苯酰基苯胺的二价有机基时,可在分子间形成氢键。It is worth noting that the other repeating units represented by formula 3 contain divalent organic groups derived from p-phenylenediamine and/or 4,4'-diaminobenzoanilide, so that the intermolecular force is enhanced. In detail, p-phenylenediamine has a π electron system and has good symmetry, and by containing a divalent organic group derived from p-phenylenediamine, the π-π stacking force between molecules can be enhanced. , thus forming a π-π stacking (π-πstacking) structure; and 4,4'-diaminobenzanilide has an amide group belonging to a hydrogen-bonding group, so that when other repeating units shown in formula 3 contain derived from 4 , When the divalent organic group of 4'-diaminobenzanilide can form a hydrogen bond between molecules.
在上述式2中,0.25≤X≤1,较佳是0.5≤X≤1。也就是说,式2所示的结构中可能仅含有式1表示的重复单元而不含有其他重复单元,或是含有特定比例的其他重复单元。从另一观点而言,在本实施方式中,制备式2所示的结构时,可采用一种二胺单体或多种二胺单体。In the above formula 2, 0.25≤X≤1, preferably 0.5≤X≤1. That is to say, the structure shown in Formula 2 may only contain the repeating unit represented by Formula 1 without other repeating units, or contain other repeating units in a specific ratio. From another point of view, in this embodiment, when preparing the structure represented by Formula 2, one type of diamine monomer or multiple types of diamine monomers may be used.
进一步而言,当X=1时,式2所示的结构仅含有式1表示的重复单元而不含有其他重复单元。而当聚合物仅包括式2所示的结构时,其为通过采用含有环己烷基的二胺(即4,4'-二氨基二环己基甲烷、1,3-二(氨甲基)环己烷、1,4-二(氨甲基)环己烷、双(氨甲基)双环[2.2.1]庚烷及二氨甲基环己基甲烷中的至少一种)作为二胺单体来制备的聚酰亚胺聚合物。Further, when X=1, the structure shown in Formula 2 only contains the repeating unit represented by Formula 1 and does not contain other repeating units. And when the polymer only includes the structure shown in Formula 2, it is obtained by using diamines containing cyclohexane (ie 4,4'-diaminodicyclohexylmethane, 1,3-bis(aminomethyl) At least one of cyclohexane, 1,4-bis(aminomethyl)cyclohexane, bis(aminomethyl)bicyclo[2.2.1]heptane and diaminomethylcyclohexylmethane) as diamine mono body to prepare the polyimide polymer.
值得说明的是,如前文所述,4,4'-二氨基二环己基甲烷、1,3-二(氨甲基)环己烷、1,4-二(氨甲基)环己烷、双(氨甲基)双环[2.2.1]庚烷或二氨甲基环己基甲烷具有低介电常数、低介电损耗及良好热稳定性的性质,以及含有芳香族基的四羧酸二酐具有高热稳定的性质,故此时包括式2所示的结构的聚合物不但具有高热稳定性,还具有低的介电常数及介电损耗。It is worth noting that, as mentioned above, 4,4'-diaminodicyclohexylmethane, 1,3-bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, Bis(aminomethyl)bicyclo[2.2.1]heptane or diaminomethylcyclohexylmethane has the properties of low dielectric constant, low dielectric loss and good thermal stability, and tetracarboxylic dicarboxylic acid containing aromatic group Anhydrides have high thermal stability, so the polymer including the structure shown in Formula 2 not only has high thermal stability, but also has low dielectric constant and dielectric loss.
另外,如前文所述,所述聚酰亚胺聚合物是在溶剂的存在下制备,所述溶剂例如是NMP、DMAc、DMSO、DMF、六甲基磷酰胺或间甲酚,而所述聚酰亚胺聚合物的酰亚胺化比率为100%。In addition, as mentioned above, the polyimide polymer is prepared in the presence of a solvent, such as NMP, DMAc, DMSO, DMF, hexamethylphosphoramide or m-cresol, and the polyimide The imidization ratio of the imide polymer was 100%.
而当0.25≤X<1时,式2所示的结构含有大于0且小于或等于75摩尔百分比的其他重复单元。进一步而言,当聚合物仅包括式2所示的结构且其他重复单元以式3表示时,所述聚合物为除了采用含有环己烷基的二胺外,还采用其他不含环己烷基的二胺单体来制备的聚酰亚胺聚合物。And when 0.25≤X<1, the structure shown in Formula 2 contains other repeating units greater than 0 and less than or equal to 75 mole percent. Further, when the polymer only includes the structure shown in formula 2 and other repeating units are represented by formula 3, in addition to the diamine containing cyclohexane group, the polymer also adopts other diamines that do not contain cyclohexane Polyimide polymers prepared from diamine-based monomers.
具体而言,在一实施方式中,式2所示的结构可通过使用4,4'-二氨基二环己基甲烷及对苯二胺作为二胺单体来制备;在另一实施方式中,式2所示的结构也可通过使用4,4'-二氨基二环己基甲烷及4,4'-二胺基苯酰基苯胺作为二胺单体来制备;或在又一实施方式中,式2所示的结构也可通过使用4,4'-二氨基二环己基甲烷、对苯二胺及4,4'-二胺基苯酰基苯胺作为二胺单体来制备。另外,当同时使用4,4'-二氨基二环己基甲烷、对苯二胺及4,4'-二胺基苯酰基苯胺作为二胺单体时,对苯二胺及4,4'-二胺基苯酰基苯胺的摩尔比例如是9:1至1:9,较佳是4:1至3:2。然而,本发明并不仅限于此,领域中技术人员根据前文应理解,只要同时使用含有环己烷基的二胺以及含有芳香族基或环状脂肪族基但不含有环己烷基的二胺作为二胺单体来制备式2所示的结构即落入本发明的范畴内。Specifically, in one embodiment, the structure shown in Formula 2 can be prepared by using 4,4'-diaminodicyclohexylmethane and p-phenylenediamine as diamine monomers; in another embodiment, The structure shown in formula 2 can also be prepared by using 4,4'-diaminodicyclohexylmethane and 4,4'-diaminobenzoanilide as diamine monomers; or in another embodiment, the formula The structure shown in 2 can also be prepared by using 4,4'-diaminodicyclohexylmethane, p-phenylenediamine and 4,4'-diaminobenzoanilide as diamine monomers. In addition, when 4,4'-diaminodicyclohexylmethane, p-phenylenediamine and 4,4'-diaminobenzoanilide are used as diamine monomers at the same time, p-phenylenediamine and 4,4'- The molar ratio of diaminobenzoanilide is, for example, 9:1 to 1:9, preferably 4:1 to 3:2. However, the present invention is not limited thereto, and those skilled in the art should understand based on the foregoing, as long as diamines containing cyclohexane groups and diamines containing aromatic groups or cycloaliphatic groups but not containing cyclohexane groups are used at the same time It is within the scope of the present invention to prepare the structure shown in Formula 2 as a diamine monomer.
值得说明的是,如前文所述,在结构中含有衍生自对苯二胺的二价有机基可使得分子间的π-π堆叠力增强,以及含有衍生自4,4'-二胺基苯酰基苯胺的二价有机基可使得分子间具有氢键,因此,包括式2所示的结构的聚合物通过含有衍生自对苯二胺和/或4,4'-二胺基苯酰基苯胺的二价有机基,可使得其热膨胀系数降低。详细而言,与未含有衍生自对苯二胺及4,4'-二胺基苯酰基苯胺的二价有机基的聚合物相比,包括式2所示的含有衍生自对苯二胺和/或4,4'-二胺基苯酰基苯胺的二价有机基的结构的聚合物具有较低的热膨胀系数。It is worth noting that, as mentioned above, containing divalent organic groups derived from p-phenylenediamine in the structure can enhance the π-π stacking force between molecules, and containing divalent organic groups derived from 4,4'-diaminobenzene The divalent organic group of the anilide can make the intermolecular hydrogen bond, therefore, the polymer including the structure shown in formula 2 can be derived from p-phenylenediamine and/or 4,4'-diaminobenzoanilide A divalent organic group can reduce its coefficient of thermal expansion. In detail, compared with polymers that do not contain divalent organic groups derived from p-phenylenediamine and 4,4'-diaminobenzoanilide, including those shown in Formula 2 that contain divalent organic groups derived from p-phenylenediamine and And/or 4,4'-diaminobenzanilide polymers with a divalent organic group structure have a lower coefficient of thermal expansion.
也就是说,包括式2所示的结构的聚合物通过含有具有良好热稳定性且可使介电常数及介电损耗降低的衍生自4,4'-二氨基二环己基甲烷、1,3-二(氨甲基)环己烷、1,4-二(氨甲基)环己烷、双(氨甲基)双环[2.2.1]庚烷及二氨甲基环己基甲烷中的至少一种的二价有机基外,更进一步搭配可增强分子间作用力的衍生自对苯二胺和/或4,4'-二胺基苯酰基苯胺的二价有机基,使得其在介电性质、热稳定性及尺寸安定性等物理特性之间能够取得良好的平衡。也就是说,包括式2所示的结构的聚合物得以同时具有低介电常数、低介电损耗、与铜箔相近的热膨胀系数及高热稳定性的性质。That is to say, the polymer comprising the structure shown in formula 2 is derived from 4,4'-diaminodicyclohexylmethane, 1,3 - At least one of bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cyclohexane, bis(aminomethyl)bicyclo[2.2.1]heptane and diaminomethylcyclohexylmethane In addition to a kind of divalent organic group, it is further matched with a divalent organic group derived from p-phenylenediamine and/or 4,4'-diaminobenzoanilide that can enhance the intermolecular force, making it in the dielectric A good balance can be achieved among physical properties such as properties, thermal stability and dimensional stability. That is to say, the polymer including the structure shown in formula 2 can simultaneously have the properties of low dielectric constant, low dielectric loss, thermal expansion coefficient similar to that of copper foil, and high thermal stability.
另外,本发明的聚合物可为薄膜、粉体或溶液等的形态。下文中,以聚合物为薄膜形态为例来加以说明。In addition, the polymer of the present invention may be in the form of a film, powder, or solution. Hereinafter, the polymer in the form of a thin film will be described as an example.
本发明的另一实施方式提供一种绝缘膜,包括前述聚合物。详细而言,所述绝缘膜的介电常数为2.8至3.5、以及介电损耗为0.005至0.014。Another embodiment of the present invention provides an insulating film including the aforementioned polymer. In detail, the dielectric constant of the insulating film is 2.8 to 3.5, and the dielectric loss is 0.005 to 0.014.
值得说明的是,如前文所述,由于聚合物不但可具有低介电常数、低介电损耗及高热稳定性,进一步还可具有与铜箔相近的热膨胀系数,故绝缘膜同样地能够具有低介电常数、低介电损耗及高热稳定性,以及进一步具有与铜箔相近的热膨胀系数,藉此所述绝缘膜不但符合产业上的需求而适用于软性铜箔基板中,还具有工业化价值。It is worth noting that, as mentioned above, since the polymer not only has low dielectric constant, low dielectric loss and high thermal stability, but also has a thermal expansion coefficient close to that of copper foil, the insulating film can also have low The dielectric constant, low dielectric loss and high thermal stability, and further have a thermal expansion coefficient similar to that of copper foil, so that the insulating film not only meets the needs of the industry and is suitable for flexible copper foil substrates, but also has industrial value .
本发明的另一实施方式还提供一种软性铜箔基板(flexible copper cladlaminate,简称FCCL),包括铜箔以及前述的绝缘膜,其中绝缘膜即作为软性铜箔基板中的软性基板。作为铜箔,可利用所属领域中技术人员所周知的软性铜箔基板所使用的任一种铜箔,例如可为电解铜箔或压延铜箔,且厚度也并不特别限定。Another embodiment of the present invention also provides a flexible copper clad laminate (FCCL for short), including copper foil and the aforementioned insulating film, wherein the insulating film serves as a flexible substrate in the flexible copper clad laminate. As the copper foil, any copper foil known to those skilled in the art for flexible copper foil substrates can be used, such as electrolytic copper foil or rolled copper foil, and the thickness is not particularly limited.
另外,本发明的软性铜箔基板还包括配置在铜箔与绝缘膜之间的粘着层,用以使铜箔能够紧密地附着在绝缘膜上。粘着层的材质例如是热固性树脂。In addition, the flexible copper foil substrate of the present invention also includes an adhesive layer disposed between the copper foil and the insulating film, so as to enable the copper foil to adhere closely to the insulating film. The material of the adhesive layer is, for example, thermosetting resin.
值得说明的是,如前文所述,由于绝缘膜具有低介电常数、低介电损耗及高热稳定性,故软性铜箔基板能够拥有良好的可靠性以及制程良率。详细而言,绝缘膜具有低介电常数及低介电损耗,藉此使得软性铜箔基板制成的软性电路板中线路之间的电性干扰降低,有助于避免发生寄生电容及其衍生的功率负载,及避免讯号延迟或干扰而造成功率消耗上升。另外,由于绝缘膜进一步可具有与铜箔相近的热膨胀系数,藉此能够有效抑制绝缘膜由于制造软性铜箔基板时的高温制程而引起的尺寸变化,进而避免发生对位偏移而提高软性铜箔基板的尺寸安定性。It is worth noting that, as mentioned above, due to the low dielectric constant, low dielectric loss and high thermal stability of the insulating film, the flexible copper foil substrate can have good reliability and process yield. In detail, the insulating film has a low dielectric constant and low dielectric loss, thereby reducing the electrical interference between the lines in the flexible circuit board made of the flexible copper foil substrate, and helping to avoid the occurrence of parasitic capacitance and The resulting power load, and avoid signal delay or interference caused by increased power consumption. In addition, since the insulating film can further have a thermal expansion coefficient similar to that of the copper foil, it can effectively suppress the dimensional change of the insulating film caused by the high-temperature process when manufacturing the flexible copper foil substrate, thereby avoiding the occurrence of alignment shift and improving the flexibility. Dimensional stability of permanent copper foil substrate.
下文将参照实施例1-12及比较例1,更具体地描述本发明的特征。虽然描述了以下实施例1-12,但是在不逾越本发明范畴的情况下,可适当地改变所用材料、其量及比率、处理细节以及处理流程等等。因此,不应由下文所述的实施例对本发明作出限制性地解释。Hereinafter, the features of the present invention will be described more specifically with reference to Examples 1-12 and Comparative Example 1. Although the following Examples 1 to 12 are described, the materials used, their amounts and ratios, processing details, processing flow, and the like can be appropriately changed without departing from the scope of the present invention. Therefore, the present invention should not be limitedly interpreted by the Examples described below.
制备实施例1至实施例7及比较例1的绝缘膜所使用的主要材料及设备的信息如下所示。Information on the main materials and equipment used to prepare the insulating films of Examples 1 to 7 and Comparative Example 1 is as follows.
4,4'-二氨基二环己基甲烷:购自TCI公司。4,4'-Diaminodicyclohexylmethane: purchased from TCI Company.
对苯二胺:购自东信化学公司。p-Phenylenediamine: purchased from Dongshin Chemical Company.
4,4'-二氨基苯酰基苯胺:购自TCI公司。4,4'-Diaminobenzanilide: purchased from TCI Company.
3,3',4,4'-联苯四羧酸二酐:购自JFE化学股份有限公司。3,3',4,4'-Biphenyltetracarboxylic dianhydride: purchased from JFE Chemical Co., Ltd.
均苯四甲酸二酐:购自JFE公司。Pyromellitic dianhydride: purchased from JFE Company.
4,4'-氧双邻苯二甲酸酐:购自JFE公司。4,4'-Oxydiphthalic anhydride: purchased from JFE Company.
N-甲基-2-吡咯烷酮:购自TEDIA公司。N-methyl-2-pyrrolidone: purchased from TEDIA Company.
低测定力测定仪:由三丰美国公司(Mitutoyo America Corporation)制造,设备名为Litematic LV-50A。Low Determination Force Tester: manufactured by Mitutoyo America Corporation, the equipment name is Litematic LV-50A.
实施例1Example 1
在水浴(室温)下秤取0.1486mol(31.27g)的4,4'-二氨基二环己基甲烷(以下简称MBCHA)溶于作为溶剂的420g的N-甲基-2-吡咯烷酮(以下简称NMP)中。在水浴下加入0.1486mol(43.73g)的3,3',4,4'-联苯四羧酸二酐(以下简称BPDA)。接着,在水浴下,反应5~7小时后即获得固含量为15%的聚酰胺酸溶液。之后,将所述聚酰胺酸溶液在150℃下烘烤10分钟后,在350℃的氮气环境下进行酰亚胺化反应(脱水环化)30~40分钟,以获得实施例1的绝缘膜,其中酰亚胺化比率为100%,且以低测定力测定仪进行厚度的测量,得到厚度约为12μm至22μm。Weigh 0.1486mol (31.27g) of 4,4'-diaminodicyclohexylmethane (hereinafter referred to as MBCHA) in a water bath (room temperature) and dissolve it in 420g of N-methyl-2-pyrrolidone (hereinafter referred to as NMP) as a solvent )middle. 0.1486mol (43.73g) of 3,3',4,4'-biphenyltetracarboxylic dianhydride (hereinafter referred to as BPDA) was added under a water bath. Next, under a water bath , a polyamic acid solution with a solid content of 15% is obtained after reacting for 5-7 hours. Afterwards, after baking the polyamic acid solution at 150°C for 10 minutes, an imidization reaction (dehydration cyclization) was carried out under a nitrogen atmosphere at 350°C for 30 to 40 minutes to obtain the insulating film of Example 1 , wherein the imidization ratio is 100%, and the thickness is measured with a low force measuring instrument, and the thickness is about 12 μm to 22 μm.
实施例2Example 2
在水浴(室温)下,秤取0.0438mol(9.21g)的MBCHA溶于作为溶剂的425g的NMP中。在水浴下加入0.1753mol(51.57g)的BPDA。接着,将0.1315mol(14.21g)的对苯二胺(以下简称PDA)加入前述溶液中。之后,反应5~7小时后即获得固含量为15%的聚酰胺酸溶液。接着,将所述聚酰胺酸溶液在150℃下烘烤10分钟后,在350℃的氮气环境下进行酰亚胺化反应30~40分钟,以获得实施例2的绝缘膜,其中酰亚胺化比率为100%,且以低测定力测定仪进行厚度的测量,得到厚度约为12μm至22μm。In a water bath (room temperature), 0.0438 mol (9.21 g) of MBCHA was weighed and dissolved in 425 g of NMP as solvent. 0.1753 mol (51.57 g) of BPDA was added under a water bath. Next, 0.1315 mol (14.21 g) of p-phenylenediamine (hereinafter referred to as PDA) was added to the aforementioned solution. Afterwards, a polyamic acid solution with a solid content of 15% was obtained after reacting for 5-7 hours. Next, after baking the polyamic acid solution at 150°C for 10 minutes, an imidization reaction was carried out under a nitrogen atmosphere at 350°C for 30 to 40 minutes to obtain the insulating film of Example 2, wherein the imide The ratio is 100%, and the thickness is measured with a low force measuring instrument, and the thickness is about 12 μm to 22 μm.
实施例3Example 3
按照与实施例2相同的制造程序制造实施例3的绝缘膜,其差异之处仅在于:在实施例2中,MBCHA、PDA与BPDA的摩尔比为0.25:0.75:1,而在实施例3中,MBCHA、PDA与BPDA的摩尔比为0.5:0.5:1。另外,在实施例3中,聚酰胺酸溶液的固含量、酰亚胺化比率以及绝缘膜的厚度分别示于表1中。The insulating film of Example 3 is manufactured according to the same manufacturing procedure as that of Example 2, the only difference is that in Example 2, the molar ratio of MBCHA, PDA and BPDA is 0.25:0.75:1, and in Example 3 Among them, the molar ratio of MBCHA, PDA and BPDA is 0.5:0.5:1. In addition, in Example 3, the solid content of the polyamic acid solution, the imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.
实施例4Example 4
按照与实施例2相同的制造程序制造实施例4的绝缘膜,其差异之处仅在于:在实施例2中,MBCHA、PDA与BPDA的摩尔比为0.25:0.75:1,而在实施例4中,MBCHA、PDA与BPDA的摩尔比为0.75:0.25:1。另外,在实施例4中,聚酰胺酸溶液的固含量、酰亚胺化比率以及绝缘膜的厚度分别示于表1中。The insulating film of embodiment 4 is manufactured according to the same manufacturing procedure as embodiment 2, and its difference is only: in embodiment 2, the molar ratio of MBCHA, PDA and BPDA is 0.25:0.75:1, and in embodiment 4 Among them, the molar ratio of MBCHA, PDA and BPDA is 0.75:0.25:1. In addition, in Example 4, the solid content of the polyamic acid solution, the imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.
实施例5Example 5
在水浴(室温)下,秤取0.074mol(15.56g)的MBCHA以及0.074mol(16.81g)的4,4'-二氨基苯酰基苯胺(以下简称DABA)溶于作为溶剂的425g的NMP中。在水浴下加入0.148mol(42.64g)的BPDA。之后,在水浴下,反应5~7小时后即获得固含量为15%的聚酰胺酸溶液。接着,将所述聚酰胺酸溶液在150℃下烘烤10分钟后,在350℃的氮气环境下进行酰亚胺化反应30~40分钟,以获得实施例5的绝缘膜,其中酰亚胺化比率为100%,且以低测定力测定仪进行厚度的测量,得到厚度约为12μm至22μm。In a water bath (room temperature), 0.074 mol (15.56 g) of MBCHA and 0.074 mol (16.81 g) of 4,4'-diaminobenzoylaniline (hereinafter referred to as DABA) were weighed and dissolved in 425 g of NMP as a solvent. 0.148 mol (42.64 g) of BPDA was added under a water bath. Afterwards, under a water bath, a polyamic acid solution with a solid content of 15% is obtained after reacting for 5-7 hours. Next, after baking the polyamic acid solution at 150° C. for 10 minutes, an imidization reaction was carried out under a nitrogen atmosphere at 350° C. for 30 to 40 minutes to obtain the insulating film of Example 5, wherein the imide The ratio is 100%, and the thickness is measured with a low force measuring instrument, and the thickness is about 12 μm to 22 μm.
实施例6Example 6
按照与实施例5相同的制造程序制造实施例6的绝缘膜,其差异之处仅在于:在实施例5中,MBCHA、DABA与BPDA的摩尔比为0.5:0.5:1,而在实施例6中,MBCHA、DABA与BPDA的摩尔比为0.75:0.25:1。另外,在实施例6中,聚酰胺酸溶液的固含量、酰亚胺化比率以及绝缘膜的厚度分别示于表1中。The insulating film of Example 6 is manufactured according to the same manufacturing procedure as that of Example 5, the only difference is that in Example 5, the molar ratio of MBCHA, DABA and BPDA is 0.5:0.5:1, and in Example 6 Among them, the molar ratio of MBCHA, DABA and BPDA is 0.75:0.25:1. In addition, in Example 6, the solid content of the polyamic acid solution, the imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.
实施例7Example 7
在水浴(室温)下,秤取0.0806mol(16.95g)的MBCHA、0.0644mol(6.97g)的PDA以及0.0161mol(3.66g)的DABA溶于作为溶剂的425g的NMP中。在水浴下加入0.1611mol(47.42g)的BPDA。之后,在水浴下,反应5~7小时后即获得固含量为15%的聚酰胺酸溶液。接着,将所述聚酰胺酸溶液在150℃下烘烤10分钟后,在350℃的氮气环境下进行酰亚胺化反应30~40分钟,以获得实施例7的绝缘膜,其中酰亚胺化比率为100%,且以低测定力测定仪进行厚度的测量,得到厚度约为12μm至22μm。In a water bath (room temperature), 0.0806 mol (16.95 g) of MBCHA, 0.0644 mol (6.97 g) of PDA and 0.0161 mol (3.66 g) of DABA were weighed and dissolved in 425 g of NMP as a solvent. 0.1611 mol (47.42 g) of BPDA was added under a water bath. Afterwards, under a water bath, a polyamic acid solution with a solid content of 15% is obtained after reacting for 5-7 hours. Next, after baking the polyamic acid solution at 150°C for 10 minutes, an imidization reaction was carried out under a nitrogen atmosphere at 350°C for 30 to 40 minutes to obtain the insulating film of Example 7, wherein the imide The ratio is 100%, and the thickness is measured with a low force measuring instrument, and the thickness is about 12 μm to 22 μm.
实施例8Example 8
按照与实施例7相同的制造程序制造实施例8的绝缘膜,其差异之处仅在于:在实施例7中,MBCHA、PDA、DABA与BPDA的摩尔比为0.5:0.4:0.1:1,而在实施例8中,MBCHA、PDA、DABA与BPDA的摩尔比为0.5:0.35:0.15:1。另外,在实施例8中,聚酰胺酸溶液的固含量、酰亚胺化比率以及绝缘膜的厚度分别示于表1中。The insulating film of Example 8 is manufactured according to the same manufacturing procedure as that of Example 7, the only difference is that in Example 7, the molar ratio of MBCHA, PDA, DABA and BPDA is 0.5:0.4:0.1:1, and In Example 8, the molar ratio of MBCHA, PDA, DABA and BPDA is 0.5:0.35:0.15:1. In addition, in Example 8, the solid content of the polyamic acid solution, the imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.
实施例9Example 9
按照与实施例7相同的制造程序制造实施例9的绝缘膜,其差异之处仅在于:在实施例7中,MBCHA、PDA、DABA与BPDA的摩尔比为0.5:0.4:0.1:1,而在实施例9中,MBCHA、PDA、DABA与BPDA的摩尔比为0.5:0.3:0.2:1。另外,在实施例9中,聚酰胺酸溶液的固含量、酰亚胺化比率以及绝缘膜的厚度分别示于表1中。The insulating film of Example 9 is manufactured according to the same manufacturing procedure as that of Example 7, the only difference is that in Example 7, the molar ratio of MBCHA, PDA, DABA and BPDA is 0.5:0.4:0.1:1, and In Example 9, the molar ratio of MBCHA, PDA, DABA and BPDA is 0.5:0.3:0.2:1. In addition, in Example 9, the solid content of the polyamic acid solution, the imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.
实施例10Example 10
在水浴(室温)下,秤取0.2334mol(50.90g)的均苯四甲酸二酐(以下简称PMDA)溶于作为溶剂的200g的NMP中,以及秤取0.2334mol(49.10g)的MBCHA溶于作为溶剂的200g的NMP中。接着,将PMDA溶液与MBCHA溶液均匀混合后,在水浴下,反应10~12小时后即获得固含量为20%的聚酰胺酸溶液。接着,将所述聚酰胺酸溶液在150℃下烘烤10分钟后,在350℃的氮气环境下进行酰亚胺化反应30~40分钟,以获得实施例10的绝缘膜,其中酰亚胺化比率为100%,且以低测定力测定仪进行厚度的测量,得到厚度约为12μm至22μm。In a water bath (room temperature), weigh 0.2334mol (50.90g) of pyromellitic dianhydride (hereinafter referred to as PMDA) to be dissolved in 200g of NMP as a solvent, and weigh 0.2334mol (49.10g) of MBCHA to be dissolved in 200 g of NMP as solvent. Next, the PMDA solution and the MBCHA solution were evenly mixed, and reacted in a water bath for 10-12 hours to obtain a polyamic acid solution with a solid content of 20%. Next, after baking the polyamic acid solution at 150°C for 10 minutes, an imidization reaction was carried out in a nitrogen atmosphere at 350°C for 30 to 40 minutes to obtain the insulating film of Example 10, wherein the imide The ratio is 100%, and the thickness is measured with a low force measuring instrument, and the thickness is about 12 μm to 22 μm.
实施例11Example 11
按照与实施例10相同的制造程序制造实施例11的绝缘膜,其差异之处仅在于:在实施例10中,所使用的二酐单体为PMDA,而在实施例11中,所使用的二酐单体为4,4'-氧双邻苯二甲酸酐(以下简称ODPA)。另外,在实施例11中,聚酰胺酸溶液的固含量、酰亚胺化比率以及绝缘膜的厚度分别示于表1中。The insulating film of Example 11 is manufactured according to the same manufacturing procedure as that of Example 10, the only difference is that in Example 10, the dianhydride monomer used is PMDA, and in Example 11, the used The dianhydride monomer is 4,4'-oxydiphthalic anhydride (hereinafter referred to as ODPA). In addition, in Example 11, the solid content of the polyamic acid solution, the imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.
实施例12Example 12
在水浴(室温)下,秤取0.1723mol(36.25g)的MBCHA以及0.0191mol(4.35g)的DABA溶于作为溶剂的400g的NMP中。在水浴下,加入0.1914mol(59.40g)的ODPA。之后,在水浴下,反应5~7小时后即获得固含量为20%的聚酰胺酸溶液。接着,将所述聚酰胺酸溶液在150℃下烘烤10分钟后,在350℃的氮气环境下进行酰亚胺化反应30~40分钟,以获得实施例12的绝缘膜,其中酰亚胺化比率为100%,且以低测定力测定仪进行厚度的测量,得到厚度约为12μm至22μm。In a water bath (room temperature), 0.1723 mol (36.25 g) of MBCHA and 0.0191 mol (4.35 g) of DABA were weighed and dissolved in 400 g of NMP as a solvent. Under a water bath, 0.1914 mol (59.40 g) of ODPA was added. Afterwards, under a water bath, a polyamic acid solution with a solid content of 20% is obtained after reacting for 5-7 hours. Next, after baking the polyamic acid solution at 150°C for 10 minutes, an imidization reaction was carried out under a nitrogen atmosphere at 350°C for 30 to 40 minutes to obtain the insulating film of Example 12, wherein the imide The ratio is 100%, and the thickness is measured with a low force measuring instrument, and the thickness is about 12 μm to 22 μm.
比较例1Comparative example 1
按照与实施例1相同的制造程序制造比较例1的绝缘膜,其差异之处仅在于:在实施例1中,所使用的二胺单体为MBCHA,而在比较例1中,所使用的二胺单体为DABA。另外,在比较例1中,聚酰胺酸溶液的固含量、酰亚胺化比率以及绝缘膜的厚度分别示于表1中。The insulating film of Comparative Example 1 was manufactured according to the same manufacturing procedure as that of Example 1, the only difference being that in Example 1, the diamine monomer used was MBCHA, while in Comparative Example 1, the used The diamine monomer is DABA. In addition, in Comparative Example 1, the solid content of the polyamic acid solution, the imidization ratio, and the thickness of the insulating film are shown in Table 1, respectively.
之后,分别对实施例1至实施例10及比较例1的绝缘膜进行介电常数、介电损耗、热膨胀系数(coefficient of thermal expansion,简称CTE)、玻璃转移温度及热裂解温度的测定。前述测定的说明如下,且测定的结果显示于表2中。Afterwards, the dielectric constant, dielectric loss, coefficient of thermal expansion (CTE), glass transition temperature and thermal cracking temperature of the insulating films of Examples 1 to 10 and Comparative Example 1 were measured respectively. The foregoing assays are described below, and the results of the assays are shown in Table 2.
〈介电常数、介电损耗的测定〉<Measurement of dielectric constant and dielectric loss>
首先,将实施例1至实施例10及比较例1的绝缘膜分别制作成长宽尺寸为7cm×10cm的膜材。接着,将该些膜材置于烘箱中以130℃的温度烘烤2小时后,将其放置于大气环境下五天。之后,使用介电常数测定装置(罗德史瓦兹公司(ROHDE&SCHWARZ)制造,设备名为ZVB20V Vector Network Analyzer)对该些膜材的介电常数及介电损耗进行量测,其中量测频率为10GHz。在业界中,在软性铜箔基板的应用中,绝缘膜的介电常数为3.2以下符合产品需求,且数值越低表示介电性质越好;以及绝缘膜的介电损耗为0.01以下符合产品需求,且数值越低表示介电性质越好。First, the insulating films of Examples 1 to 10 and Comparative Example 1 were made into film materials with a length and width of 7 cm×10 cm. Next, these film materials were placed in an oven and baked at a temperature of 130° C. for 2 hours, and then placed in an atmospheric environment for five days. After that, use a dielectric constant measuring device (manufactured by Rohde & Schwarz (ROHDE & SCHWARZ), the equipment name is ZVB20V Vector Network Analyzer) to measure the dielectric constant and dielectric loss of these films, and the measurement frequency is 10GHz. In the industry, in the application of flexible copper foil substrates, the dielectric constant of the insulating film is less than 3.2, which meets the product requirements, and the lower the value, the better the dielectric properties; and the dielectric loss of the insulating film is less than 0.01, which meets the product requirements. The lower the value, the better the dielectric properties.
〈热膨胀系数的测定〉<Measurement of Coefficient of Thermal Expansion>
首先,将实施例1至实施例10及比较例1的绝缘膜分别制作成长宽尺寸为2mm×30mm的膜材。接着,使用热机械分析仪(日本精工电子有限公司(Seiko Instrument Inc.)制造,设备名为EXSTAR 6000),在氮气环境以及升温速度设定为10℃/min的条件下,将该些膜材从30℃升温至450℃,并求出50℃至200℃之间的尺寸变化量的平均值,以获得热膨胀系数。在业界中,在软性铜箔基板的应用中,热膨胀系数为30ppm/℃以下即可视为与铜箔的热膨胀系数(17ppm/℃)相近。First, the insulating films of Examples 1 to 10 and Comparative Example 1 were made into film materials with a length and width of 2 mm×30 mm, respectively. Then, using a thermomechanical analyzer (manufactured by Seiko Instrument Inc., the device name is EXSTAR 6000), these membrane materials were tested under a nitrogen atmosphere and a heating rate of 10 °C/min. The temperature was raised from 30°C to 450°C, and the average value of the dimensional changes between 50°C and 200°C was calculated to obtain the coefficient of thermal expansion. In the industry, in the application of flexible copper foil substrates, a thermal expansion coefficient below 30ppm/°C can be regarded as similar to that of copper foil (17ppm/°C).
〈玻璃转移温度的测定〉<Measurement of Glass Transition Temperature>
首先,将实施例1至实施例10及比较例1的绝缘膜分别制作成长宽尺寸为5mm×40mm的膜材。接着,使用动态机械分析仪(日本精工电子有限公司(Seiko InstrumentInc.)制造,设备名为EXSTAR 6100),在氮气环境以及升温速度设定为10℃/min的条件下,将该些膜材从30℃升温至450℃,并将损失正切(tanδ)变化率达到最大时所量测到的温度作为玻璃转移温度。一般而言,当绝缘膜应用至软性铜箔基板时,会通过焊锡测试(SolderTest)来测试其耐焊锡的程度,而焊锡测试的测试条件通常在300℃下维持30秒。因此,在软性铜箔基板的应用中,绝缘膜的玻璃转移温度较佳为300℃以上,且数值越大,表示绝缘膜的热稳定性越佳。First, the insulating films of Examples 1 to 10 and Comparative Example 1 were made into film materials with a length and width of 5 mm×40 mm, respectively. Then, using a dynamic mechanical analyzer (manufactured by Seiko Instrument Inc., the device name is EXSTAR 6100), these films were removed from The temperature was raised from 30°C to 450°C, and the temperature measured when the change rate of loss tangent (tanδ) reached the maximum was taken as the glass transition temperature. Generally speaking, when an insulating film is applied to a flexible copper foil substrate, its solder resistance is tested through a solder test (Solder Test), and the test condition of the solder test is usually maintained at 300°C for 30 seconds. Therefore, in the application of flexible copper foil substrates, the glass transition temperature of the insulating film is preferably above 300° C., and the larger the value, the better the thermal stability of the insulating film.
〈热裂解温度的测定〉<Measurement of thermal cracking temperature>
首先,分别秤取0.5克至0.8克的实施例1至实施例10及比较例1的绝缘膜,以作为测试膜材。接着,使用热重损失分析仪(日本精工电子有限公司(Seiko Instrument Inc.)制造,设备名为EXSTAR 6000),在氮气环境以及升温速度设定为10℃/min的条件下,将该些膜材从30℃升温至600℃,并将膜材损失5%重量时所量测到的温度作为热裂解温度。在业界中,在软性铜箔基板的应用中,绝缘膜的热裂解温度一般至少需要达到400℃以上,且数值越大,表示绝缘膜的热稳定性越佳。Firstly, 0.5 g to 0.8 g of the insulating films of Examples 1 to 10 and Comparative Example 1 were weighed to serve as test film materials. Next, using a thermogravimetric loss analyzer (manufactured by Seiko Instrument Inc., equipment named EXSTAR 6000), these films were tested under a nitrogen atmosphere and a heating rate of 10°C/min. The material is heated from 30°C to 600°C, and the temperature measured when the film material loses 5% weight is taken as the thermal cracking temperature. In the industry, in the application of flexible copper foil substrates, the thermal cracking temperature of the insulating film generally needs to reach at least 400°C, and the larger the value, the better the thermal stability of the insulating film.
表2Table 2
由表2可知,与比较例1的未含有衍生自4,4'-二氨基二环己基甲烷的二价有机基的绝缘膜相比,实施例1至实施例10的含有衍生自4,4'-二氨基二环己基甲烷的二价有机基的绝缘膜皆具有较低的介电常数及介电损耗。另外,由表2可知,实施例1至实施例10的绝缘膜的玻璃转移温度介于262℃至352℃之间且热裂解温度介于464℃至495℃之间,此显示实施例1至实施例10的绝缘膜具有良好的热稳定性。As can be seen from Table 2, compared with the insulating film of Comparative Example 1 that does not contain divalent organic groups derived from 4,4'-diaminodicyclohexylmethane, the insulating films of Examples 1 to 10 containing divalent organic groups derived from 4,4'-diaminodicyclohexylmethane The insulating films of divalent organic radicals of '-diaminodicyclohexylmethane all have low dielectric constant and dielectric loss. In addition, it can be seen from Table 2 that the glass transition temperature of the insulating films of Examples 1 to 10 is between 262°C and 352°C and the thermal cracking temperature is between 464°C and 495°C, which shows that Examples 1 to 10 The insulating film of Example 10 has good thermal stability.
另外,由表2可知,与实施例1的绝缘膜相比,实施例2至实施例9还含有衍生自对苯二胺和/或4,4'-二胺基苯酰基苯胺的二价有机基的绝缘膜皆具有较低的热膨胀系数。更进一步而言,由表2可知,实施例7至实施例9的绝缘膜的介电常数介于3.15至3.17之间、介电损耗介于0.052至0.063之间、热膨胀系数介于28.8ppm/℃至31.5ppm/℃之间、玻璃转移温度介于285℃至296℃之间且热裂解温度介于477℃至489℃之间,此显示实施例7至实施例9的绝缘膜同时具有低介电常数、低介电损耗、与铜箔相近的热膨胀系数及高热稳定性的性质。In addition, as can be seen from Table 2, compared with the insulating film of Example 1, Examples 2 to 9 also contain divalent organic compounds derived from p-phenylenediamine and/or 4,4'-diaminobenzoanilide. The base insulating film has a relatively low coefficient of thermal expansion. Furthermore, it can be seen from Table 2 that the dielectric constant of the insulating films of Examples 7 to 9 is between 3.15 and 3.17, the dielectric loss is between 0.052 and 0.063, and the thermal expansion coefficient is between 28.8ppm/ °C to 31.5ppm/°C, the glass transition temperature is between 285°C and 296°C, and the thermal cracking temperature is between 477°C and 489°C, which shows that the insulating films of Examples 7 to 9 have low The properties of dielectric constant, low dielectric loss, thermal expansion coefficient similar to copper foil and high thermal stability.
另外,由表2可知,与实施例2及实施例3的绝缘膜相比,实施例5及实施例6的绝缘膜皆具有较低的热膨胀系数,此显示结构中含有衍生自4,4'-二胺基苯酰基苯胺的二价有机基对于热膨胀系数的调控能力优于结构中含有衍生自对苯二胺的二价有机基。In addition, it can be seen from Table 2 that compared with the insulating films of Example 2 and Example 3, the insulating films of Example 5 and Example 6 have lower coefficients of thermal expansion. This shows that the structure contains - The ability of the divalent organic group of diaminobenzoaniline to regulate the coefficient of thermal expansion is better than that of the divalent organic group derived from p-phenylenediamine in the structure.
另外,虽然未对实施例11~12的绝缘膜进行前述性质的测定,但根据实施例1至实施例10及比较例1的绝缘膜的测定结果,领域中技术人员应理解实施例11~12的绝缘膜也具有良好的介电性质,以及相对于实施例11的绝缘膜,实施例12的聚酰亚胺膜具有较低的热膨胀系数。In addition, although the aforementioned properties were not measured for the insulating films of Examples 11 to 12, according to the measurement results of the insulating films of Examples 1 to 10 and Comparative Example 1, those skilled in the art should understand that Examples 11 to 12 The insulating film of Example 12 also has good dielectric properties, and compared to the insulating film of Example 11, the polyimide film of Example 12 has a lower coefficient of thermal expansion.
最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.
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