CN106019461B - The method for manufacturing the silicon photoconductive tube of hexagonal channel - Google Patents
The method for manufacturing the silicon photoconductive tube of hexagonal channel Download PDFInfo
- Publication number
- CN106019461B CN106019461B CN201610571646.4A CN201610571646A CN106019461B CN 106019461 B CN106019461 B CN 106019461B CN 201610571646 A CN201610571646 A CN 201610571646A CN 106019461 B CN106019461 B CN 106019461B
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- Prior art keywords
- silicon
- oxide layer
- silicon oxide
- hexagonal channel
- area
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 30
- 150000002500 ions Chemical class 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 14
- 238000000992 sputter etching Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000026267 regulation of growth Effects 0.000 claims abstract description 8
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 230000037361 pathway Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 20
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0096—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the lights guides being of the hollow type
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of silicon photoconductive tubes for manufacturing hexagonal channel, comprising the following steps: the first silicon oxide layer of extension on silicon-based substrate；Two silicon oxide layer of growth regulation on silicon-based substrate；Photoresist is laid with above the second silicon oxide layer；Cornerwise equal length in the section of the width and hexagonal channel of photoresist uncovered area；The lower half portion of hexagonal channel is etched using the method for ion etching；Step 5, growth silicon area；Step 6 grinds silicon area, keeps its height equal with the height of hexagonal channel；Ion etching is carried out to silicon area, using the direction of electric field controls ion, so that the incident direction of ion is with a vertical 30 ° of angles；Three silicon oxide layer of growth regulation；Can manufacturing method through the invention, obtain the silicon photoconductive tube that light conduction pathway is regular hexagon, be circular smooth conduction pathway closer to ideal cross section, conducting effect is more preferable.
Description
Technical field
The present invention relates to silicon photoconductive tubes, and in particular to a method of the silicon photoconductive tube of manufacture hexagonal channel.
Background technique
Refractive index of the light in silicon is 3.42, and the refractive index of light in silica is between 1.4~1.5, according to light
Basic refraction principle it is found that if light conducts in silicon, and if silicon and silica form a contact surface, light can be in silicon
It is middle to conduct and be totally reflected by the contact surface of silicon and silica.So if there is the structure of the fully wrapped around silicon of silica
If, light can be made to conduct in silicon without loss.
The section of silicon structure in silicon photoconductive tube in the prior art is regular quadrangle.According to light conduction mode it is found that
When the section of optical channel is round, best conducting effect can reach.And still have between regular quadrangle and circle very big
Distance, light conduction can not reach optimal effect.
Summary of the invention
In view of the deficiencies of the prior art, a kind of silicon photoconductive tube of hexagonal channel can be designed, the invention discloses a kind of systems
The method for making the silicon photoconductive tube of hexagonal channel.
Technical scheme is as follows:
A kind of silicon photoconductive tube manufacturing hexagonal channel, comprising the following steps:
Step 1, the first silicon oxide layer of extension on silicon-based substrate；
Step 2, two silicon oxide layer of growth regulation on silicon-based substrate；
Step 3 grinds the second silicon oxide layer, is allowed to a half-phase of height with the depth of section of hexagonal channel
Deng；And photoresist is laid with above the second silicon oxide layer；The width of photoresist uncovered area and the section of hexagonal channel
Cornerwise equal length；
Step 4, the lower half portion that hexagonal channel is etched using the method for ion etching；Carry out ion etching when
It waits, using the direction of electric field controls ion, so that the incident direction of ion is with a vertical 30 ° of angles；
Step 5, growth silicon area；
Step 6 grinds silicon area, keeps its height equal with the height of hexagonal channel；And on 4 top of silicon area
It is laid with photoresist, the width of photoresist and the side length of hexagonal channel are equal；
Step 7 carries out ion etching to silicon area, using the direction of electric field controls ion, so that the incident direction of ion
With a vertical 30 ° of angles；
Step 8, three silicon oxide layer of growth regulation；
Step 9, to third silicon oxide layer carry out grinding make surfacing thereon.
The method have the benefit that:
Can manufacturing method through the invention, the silicon photoconductive tube that light conduction pathway is regular hexagon is obtained, by basic number
It gains knowledge it is found that the obtained structure of the present invention is closer ideal transversal for the light conduction pathway of regular quadrangle
Face is circular smooth conduction pathway, and conducting effect is more preferable.
Detailed description of the invention
Fig. 1 is the obtained structural schematic diagram of the present invention.
Fig. 2 is the schematic diagram of step 1.
Fig. 3 is the schematic diagram of step 2.
Fig. 4 is the schematic diagram of step 3.
Fig. 5 is the schematic diagram of step 4.
Fig. 6 is the schematic diagram of step 5.
Fig. 7 is the schematic diagram of step 6.
Fig. 8 is the schematic diagram of step 7.
Fig. 9 is the schematic diagram of step 8.
Figure 10 is the schematic diagram of step 9.
Specific embodiment
Fig. 1 is structural schematic diagram of the invention.As shown in Figure 1, the present invention includes silicon-based substrate 1.It is outer on silicon-based substrate 1
Prolonging has the first silicon oxide layer 2.It is the silicon area 4 of regular hexagon that growth, which has section, on first silicon oxide layer 2.Silicon area 4
Bottom edge and the surface of the first silicon oxide layer 2 coincide.With the section of the regular hexagon of silicon area 4 in horizontal direction in
Axis is boundary, between this central axes and the first silicon oxide layer 2, the periphery of silicon area 4 be enclosed with the second silicon oxide layer 3,
On the second silicon oxide layer 3, the periphery of silicon area 4 be enclosed with third silicon oxide layer 5.Pair of the cross section of silicon area 4
1 μm~3 μm of the length of linea angulata.In the present embodiment, above-mentioned silicon oxide layer refers both to dioxide layer.
The making step of structure of the present invention is as shown in Fig. 2~Figure 10.
Fig. 2 is the schematic diagram of step 1.Step 1, the first silicon oxide layer of extension 2 on silicon-based substrate 1.
Fig. 3 is the schematic diagram of step 2.Step 2, two silicon oxide layer 3 of growth regulation on silicon-based substrate 1.
Fig. 4 is the schematic diagram of step 3.Step 3 grinds the second silicon oxide layer 3, be allowed to height with hexagon
The half of the depth of section in channel is equal；And photoresist 31 is laid with above the second silicon oxide layer 3.Photoresist 31 is symmetrically spread
If the uncovered area of blank, cornerwise length in the section of the width and hexagonal channel of uncovered area are exposed in centre
It is equal；
Fig. 5 is the schematic diagram of step 4.Intermediate hole area is etched using the method for ion etching.Since centre is one
A regular hexagon will use the direction of electric field controls ion so when ion etching, so that the incident direction of ion and hanging down
Histogram is at 30 ° of angles.
Fig. 6 is the schematic diagram of step 5.Step 5, growth silicon area 4.
Fig. 7 is the schematic diagram of step 6.Step 6 grinds silicon area 4, makes the height of its height with hexagonal channel
It is equal.And it is laid with photoresist 41 on 4 top of silicon area, the width of photoresist and the side length of hexagonal channel are equal；
Fig. 8 is the schematic diagram of step 7.Step 7 carries out ion etching to silicon area 4, with the direction of electric field controls ion,
So that the incident direction of ion is with a vertical 30 ° of angles.
Fig. 9 is the schematic diagram of step 8.Step 8, three silicon oxide layer 5 of growth regulation.
Figure 10 is the schematic diagram of step 9.Step 9, to third silicon oxide layer 5 carry out grinding make surfacing thereon.
Through the invention, the silicon photoconductive tube of regular hexagon has been obtained, it is therefore apparent that such shape is due in the prior art
The silicon photoconductive tube of regular quadrangle, the number of edges of the polygon of cross section is more, closer to circular, gets over to the conductive performance of light
It is good.
What has been described above is only a preferred embodiment of the present invention, and present invention is not limited to the above embodiments.It is appreciated that this
The other improvements and change that field technical staff directly exports or associates without departing from the spirit and concept in the present invention
Change, is considered as being included within protection scope of the present invention.
Claims (1)
1. a kind of method for the silicon photoconductive tube for manufacturing hexagonal channel, which comprises the following steps:
Step 1, the first silicon oxide layer of extension (2) on silicon-based substrate 1；
Step 2, two silicon oxide layer of growth regulation (3) on silicon-based substrate 1；
Step 3 grinds the second silicon oxide layer (3), is allowed to the half of height with the depth of section with hexagonal channel
It is equal；And photoresist (31) are laid with above the second silicon oxide layer (3)；The width of photoresist (31) uncovered area and six sides
Cornerwise equal length in the section in shape channel；
Step 4, the lower half portion that hexagonal channel is etched using the method for ion etching；When carrying out ion etching,
Using the direction of electric field controls ion, so that the incident direction of ion is with a vertical 30 ° of angles；
Step 5, growth silicon area (4)；
Step 6 grinds silicon area (4), keeps its height equal with the height of hexagonal channel；And on 4 top of silicon area
It is laid with photoresist (41), the width of photoresist (41) is equal with the side length of hexagonal channel；
Step 7 carries out ion etching to silicon area (4), using the direction of electric field controls ion so that the incident direction of ion with
Vertical direction is at 30 ° of angles；
Step 8, three silicon oxide layer of growth regulation (5)；
Step 9, to third silicon oxide layer (5) carry out grinding make surfacing thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610571646.4A CN106019461B (en) | 2016-07-19 | 2016-07-19 | The method for manufacturing the silicon photoconductive tube of hexagonal channel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610571646.4A CN106019461B (en) | 2016-07-19 | 2016-07-19 | The method for manufacturing the silicon photoconductive tube of hexagonal channel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106019461A CN106019461A (en) | 2016-10-12 |
| CN106019461B true CN106019461B (en) | 2018-12-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610571646.4A Active CN106019461B (en) | 2016-07-19 | 2016-07-19 | The method for manufacturing the silicon photoconductive tube of hexagonal channel |
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Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0727090B2 (en) * | 1986-09-05 | 1995-03-29 | 富士通株式会社 | Method of manufacturing optical waveguide |
| US5906037A (en) * | 1997-02-07 | 1999-05-25 | Micron Technology, Inc. | Method of forming flat panel display |
| US7078445B2 (en) * | 2001-02-01 | 2006-07-18 | E. I. Du Pont De Nemours And Company | Photosensitive acrylate composition and waveguide device |
| US6849171B2 (en) * | 2001-03-05 | 2005-02-01 | Fuji Xerox Co., Ltd. | Light waveguide forming method, electrolyte solution, light waveguide forming apparatus and light waveguide |
| CN1284987C (en) * | 2004-03-01 | 2006-11-15 | 中国科学院半导体研究所 | Method for realizing optical waveguide fabrication |
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| CN106019461A (en) | 2016-10-12 |
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