CN105954829B - The silicon photoconductive tube of hexagonal channel - Google Patents
The silicon photoconductive tube of hexagonal channel Download PDFInfo
- Publication number
- CN105954829B CN105954829B CN201610575965.2A CN201610575965A CN105954829B CN 105954829 B CN105954829 B CN 105954829B CN 201610575965 A CN201610575965 A CN 201610575965A CN 105954829 B CN105954829 B CN 105954829B
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- Prior art keywords
- silicon
- oxide layer
- silicon oxide
- area
- section
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 56
- 239000010703 silicon Substances 0.000 title claims abstract description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000000694 effects Effects 0.000 abstract description 4
- 230000037361 pathway Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 20
- 150000002500 ions Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000026267 regulation of growth Effects 0.000 description 2
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0096—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the lights guides being of the hollow type
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
The invention discloses a kind of silicon photoconductive tubes of hexagonal channel, including silicon-based substrate；Extension has the first silicon oxide layer on the silicon-based substrate；It is the silicon area of regular hexagon that growth, which has section, on first silicon oxide layer；The bottom edge of the silicon area and the surface of the first silicon oxide layer coincide；Using the central axes in horizontal direction in the section of the regular hexagon of the silicon area as boundary, between this central axes and first silicon oxide layer, the periphery of the silicon area be enclosed with the second silicon oxide layer, on second silicon oxide layer, the periphery of the silicon area be enclosed with third silicon oxide layer；1 μm~3 μm of cornerwise length of the cross section of the silicon area.Light conduction pathway in the present invention is regular hexagon, and by basic mathematical knowledge it is found that for the light conduction pathway of regular quadrangle, the present invention is that circular light passes to channel closer to ideal cross section, and conducting effect is more preferable.
Description
Technical field
The present invention relates to silicon photoconductive tubes, and in particular to a kind of silicon photoconductive tube of hexagonal channel.
Background technique
Refractive index of the light in silicon is 3.42, and the refractive index of light in silica is between 1.4~1.5, according to light
Basic refraction principle it is found that if light conducts in silicon, and if silicon and silica form a contact surface, light can be in silicon
It is middle to conduct and be totally reflected by the contact surface of silicon and silica.So if there is the structure of the fully wrapped around silicon of silica
If, light can be made to conduct in silicon without loss.
The section of silicon structure in silicon photoconductive tube in the prior art is regular quadrangle.According to light conduction mode it is found that
When the section of optical channel is round, best conducting effect can reach.And still have between regular quadrangle and circle very big
Distance, light conduction can not reach optimal effect.
Summary of the invention
In view of the deficiencies of the prior art, the invention discloses a kind of silicon photoconductive tubes of hexagonal channel.
Technical scheme is as follows:
A kind of silicon photoconductive tube of hexagonal channel, including silicon-based substrate；Extension has the first silicon oxygen on the silicon-based substrate
Compound layer；It is the silicon area of regular hexagon that growth, which has section, on first silicon oxide layer；The bottom edge of the silicon area with
The surface of first silicon oxide layer coincides；It is with the central axes in horizontal direction in the section of the regular hexagon of the silicon area
Boundary, between this central axes and first silicon oxide layer, the periphery of the silicon area be enclosed with the second silicon oxide layer,
On second silicon oxide layer, the periphery of the silicon area be enclosed with third silicon oxide layer；The silicon area it is transversal
1 μm~3 μm of cornerwise length in face.
The method have the benefit that:
It is regular hexagon that light in the present invention, which passes to channel, by basic mathematical knowledge it is found that relative to regular quadrangle
For light conduction pathway, the present invention is that circular light passes to channel closer to ideal cross section, and conducting effect is more preferable.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention.
Fig. 2 is the schematic diagram of step 1.
Fig. 3 is the schematic diagram of step 2.
Fig. 4 is the schematic diagram of step 3.
Fig. 5 is the schematic diagram of step 4.
Fig. 6 is the schematic diagram of step 5.
Fig. 7 is the schematic diagram of step 6.
Fig. 8 is the schematic diagram of step 7.
Fig. 9 is the schematic diagram of step 8.
Figure 10 is the schematic diagram of step 9.
Specific embodiment
Fig. 1 is structural schematic diagram of the invention.As shown in Figure 1, the present invention includes silicon-based substrate 1.It is outer on silicon-based substrate 1
Prolonging has the first silicon oxide layer 2.It is the silicon area 4 of regular hexagon that growth, which has section, on first silicon oxide layer 2.Silicon area 4
Bottom edge and the surface of the first silicon oxide layer 2 coincide.With the section of the regular hexagon of silicon area 4 in horizontal direction in
Axis is boundary, between this central axes and the first silicon oxide layer 2, the periphery of silicon area 4 be enclosed with the second silicon oxide layer 3,
On the second silicon oxide layer 3, the periphery of silicon area 4 be enclosed with third silicon oxide layer 5.Pair of the cross section of silicon area 4
1 μm~3 μm of the length of linea angulata.In the present embodiment, above-mentioned silicon oxide layer refers both to dioxide layer.
The making step of structure of the present invention is as shown in Fig. 2~Figure 10.
Fig. 2 is the schematic diagram of step 1.Step 1, the first silicon oxide layer of extension 2 on silicon-based substrate 1.
Fig. 3 is the schematic diagram of step 2.Step 2, two silicon oxide layer 3 of growth regulation on silicon-based substrate 1.
Fig. 4 is the schematic diagram of step 3.Step 3 grinds the second silicon oxide layer 3, be allowed to height with hexagon
The half of the depth of section in channel is equal；And photoresist 31 is laid with above the second silicon oxide layer 3.Photoresist 31 is symmetrically spread
If the uncovered area of blank, cornerwise length in the section of the width and hexagonal channel of uncovered area are exposed in centre
It is equal；
Fig. 5 is the schematic diagram of step 4.Intermediate hole area is etched using the method for ion etching.Since centre is one
A regular hexagon will use the direction of electric field controls ion so when ion etching, so that the incident direction of ion and hanging down
Histogram is at 30 ° of angles.
Fig. 6 is the schematic diagram of step 5.Step 5, growth silicon area 4.
Fig. 7 is the schematic diagram of step 6.Step 6 grinds silicon area 4, makes the height of its height with hexagonal channel
It is equal.And it is laid with photoresist 41 on 4 top of silicon area, the width of photoresist and the side length of hexagonal channel are equal；
Fig. 8 is the schematic diagram of step 7.Step 7 carries out ion etching to silicon area 4, with the direction of electric field controls ion,
So that the incident direction of ion is with a vertical 30 ° of angles.
Fig. 9 is the schematic diagram of step 8.Step 8, three silicon oxide layer 5 of growth regulation.
Figure 10 is the schematic diagram of step 9.Step 9, to third silicon oxide layer 5 carry out grinding make surfacing thereon.
Through the invention, the silicon photoconductive tube of regular hexagon has been obtained, it is therefore apparent that such shape is due in the prior art
The silicon photoconductive tube of regular quadrangle, the number of edges of the polygon of cross section is more, closer to circular, gets over to the conductive performance of light
It is good.
What has been described above is only a preferred embodiment of the present invention, and present invention is not limited to the above embodiments.It is appreciated that this
The other improvements and change that field technical staff directly exports or associates without departing from the spirit and concept in the present invention
Change, is considered as being included within protection scope of the present invention.
Claims (1)
1. a kind of silicon photoconductive tube of hexagonal channel, which is characterized in that including silicon-based substrate (1)；On the silicon-based substrate (1)
Extension has the first silicon oxide layer (2)；It is the silicon area of regular hexagon that growth, which has section, on first silicon oxide layer (2)
(4)；The bottom edge of the silicon area (4) and the surface of the first silicon oxide layer (2) coincide；With positive the six of the silicon area (4)
The central axes in horizontal direction in the section of side shape are boundary, between this central axes and first silicon oxide layer (2), described
The periphery of silicon area (4) is enclosed with the second silicon oxide layer (3), on second silicon oxide layer (3), the silicon area
(4) periphery is enclosed with third silicon oxide layer (5)；1 μm~3 μm of cornerwise length of the cross section of the silicon area (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610575965.2A CN105954829B (en) | 2016-07-19 | 2016-07-19 | The silicon photoconductive tube of hexagonal channel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610575965.2A CN105954829B (en) | 2016-07-19 | 2016-07-19 | The silicon photoconductive tube of hexagonal channel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105954829A CN105954829A (en) | 2016-09-21 |
| CN105954829B true CN105954829B (en) | 2019-01-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610575965.2A Active CN105954829B (en) | 2016-07-19 | 2016-07-19 | The silicon photoconductive tube of hexagonal channel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105954829B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6365406A (en) * | 1986-09-05 | 1988-03-24 | Fujitsu Ltd | Method of manufacturing optical waveguide |
| US6287487B1 (en) * | 1997-02-07 | 2001-09-11 | Micron Technology, Inc. | Method of forming flat panel display spacers |
| CN1284987C (en) * | 2004-03-01 | 2006-11-15 | 中国科学院半导体研究所 | Method for realizing optical waveguide fabrication |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6850665B2 (en) * | 1999-05-12 | 2005-02-01 | Sabeus Photonics | Wavelength-selective optical fiber components using cladding-mode assisted coupling |
| US7078445B2 (en) * | 2001-02-01 | 2006-07-18 | E. I. Du Pont De Nemours And Company | Photosensitive acrylate composition and waveguide device |
-
2016
- 2016-07-19 CN CN201610575965.2A patent/CN105954829B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6365406A (en) * | 1986-09-05 | 1988-03-24 | Fujitsu Ltd | Method of manufacturing optical waveguide |
| US6287487B1 (en) * | 1997-02-07 | 2001-09-11 | Micron Technology, Inc. | Method of forming flat panel display spacers |
| CN1284987C (en) * | 2004-03-01 | 2006-11-15 | 中国科学院半导体研究所 | Method for realizing optical waveguide fabrication |
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| Publication number | Publication date |
|---|---|
| CN105954829A (en) | 2016-09-21 |
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