CN105976861B - A kind of high-power memristor circuit realized using SPWM controls - Google Patents

Abstract

The invention discloses a high-power memristor circuit realized by SPWM control, comprising an inductor L, a capacitor C, a resistor Rc, a resistor R1, a resistor R2, a thyristor, a PI controller, and a comparison amplifier. Inductor L makes the current continuous, and forms a low-pass filter with capacitor C and resistor Rc, so that the input voltage and output current have the same phase. The PI controller integrates the input voltage to obtain the magnetic flux variable, and the comparison amplifier compares the magnetic flux variable with the triangular carrier wave to obtain the SPWM waveform. The thyristor and resistor R2 are connected in parallel to form a variable resistance module controlled by the SPWM waveform. The invention uses the SPWM waveform to change the resistance value of the variable resistance module so that it conforms to the resistance value characteristics of the memristor; using power devices such as resistors, inductors, capacitors, and thyristors, the circuit structure is simple, and theoretically any level of power memristor can be realized ; Use a low-pass filter to make the output current continuous and have the same phase as the input voltage.

Description

A High Power Memristor Circuit Realized by SPWM Control

technical field

The invention relates to the technical field of power electronics, in particular to a high-power memristor circuit realized by SPWM control.

Background technique

The memristor is a basic component with memory characteristics proposed by the Chinese scientist Cai Shaotang. It is divided into a magnetron memristor and a charge-controlled memristor. The definition of the magnetron memristor is:

Its basic characteristic is that when a sine wave signal is input, the volt-ampere characteristic curve of the memristor is a "slope".

In 2008, Hewlett-Packard produced a nanoscale memristor, but the memristor is mainly used for computer storage, not suitable for power electronic circuits. Most of the existing memristor models are low-power models, which are built from multipliers, operational amplifiers and other devices, and their power is limited to a certain extent.

Connect the switch tube and the resistor in parallel, and use the chopping method to change the resistance value, and build a chopping controlled variable resistor. For details, please refer to Zhang Guangyi's "Chopping Variable Resistor Module and Its Application".

Contents of the invention

The purpose of the present invention is to overcome the shortcomings and deficiencies of the prior art, and provide a high-power memristor circuit realized by SPWM control.

The object of the present invention is achieved through the following technical solutions:

A high-power memristor circuit realized by SPWM control, said circuit comprising: a low-pass filter, a variable resistance module, a PI controller and a comparative amplifier, the input voltage Vin is connected through the first input terminal and the second input terminal After entering the high-power memristor circuit, it is connected to the input end of the low-pass filter, and the output end of the low-pass filter is connected to the variable resistance module;

The input voltage Vin is sampled and transmitted to the PI controller, the output of the PI controller is adjusted wave Vq and the carrier signal Vc is compared and amplified by the comparison amplifier to obtain a pulse voltage signal Vg, and the pulse voltage signal Vg controls The resistance of the variable resistance module changes.

Further, the low-pass filter includes an inductor L, a capacitor C, and a resistor Rc, one end of the capacitor C is connected in parallel with one end of the resistor Rc, and then connected in series with one end of the inductor L;

The first input end is connected to the other end of the inductor L, and the second input end is connected to the other end of the parallel capacitor C and resistor Rc.

Further, the variable resistance module includes a resistor R1, a resistor R2 and a thyristor, one end of the resistor R2 and one end of the thyristor are connected in parallel and connected in series with one end of the resistor R1, and the other end of the resistor R1 is connected to the inductor The other end of the R2 and the thyristor connected in parallel are connected with the other end of the capacitor C and the resistor Rc connected in parallel.

Further, the pulse voltage signal Vg controls the turn-on and turn-off of the thyristor so as to control the resistance change of the variable resistance module.

Further, the inductance L makes the output current continuous, the low-pass filter makes the output current have the same phase as the input voltage Vin, and the low-pass filter makes the high-power memristor circuit appear resistive as a whole.

Further, the PI controller integrates the input voltage Vin to obtain the magnetic flux variable, and then the magnetic flux variable is proportionally amplified and added to a constant term to obtain an adjustment wave Vq, and the comparison amplifier converts the adjustment wave Vq Compared with the carrier signal Vc, the pulse voltage signal Vg is obtained.

Further, the carrier signal Vc is a triangular carrier.

Further, the memristor value of the high-power memristor circuit is

In the above formula, R ₁ is the resistance value of resistor R1, R ₂ is the resistance value of resistor R2, R2, d(t) is the duty cycle,

in,

Represents the integral of the input voltage Vin to the time variable t, that is, the magnetic flux;

Represents the functional relationship between the magnetic flux and the input voltage Vin.

Compared with the prior art, the present invention has the following advantages and effects:

1. The present invention uses the required SPWM waveform to change the resistance value of the variable resistance module so that it conforms to the resistance characteristic of the memristor.

2. The present invention uses power devices such as resistors, inductors, capacitors, and thyristors. The circuit structure is simple, the cost of the memristor model is reduced and its reliability is improved, and any level of power memristor can be realized theoretically.

3. The present invention uses a low-pass filter to make the output current continuous and have the same phase as the input voltage.

4. Compared with the traditional type, the present invention is applicable to various power environments, including high-power circuit environments. Existing memristor models are limited by op amps to the power level of mW. The memristor model implemented by SPWM is not limited by the power of the main circuit because there are no operational amplifiers and other devices.

Description of drawings

Fig. 1 is a schematic diagram of a high-power memristor circuit realized by SPWM control disclosed in the present invention;

Fig. 2 is a circuit diagram of a high-power memristor circuit realized by using SPWM control disclosed in the present invention

Fig. 3 is the SPWM waveform of the control thyristor in the present invention;

FIG. 4 is a volt-ampere characteristic curve of a high-power memristor circuit realized by SPWM control disclosed in the present invention.

Detailed ways

In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

Example

As shown in Figure 1, the specific structure of a high-power memristor circuit realized by using SPWM and filter circuit is as follows: the first end of the input end (that is, the "1" end) is connected to one end of the inductance L, and the other end of the inductance L is connected to the capacitance C One end of the resistor Rc, one end of the resistor R1 is connected, the other end of the resistor R1 is connected to one end of the resistor R2, and one end of the switch tube is connected, and the other end of the resistor R2 is connected to the second end of the input end (that is, "2" end), The other end of the capacitor C, the other end of the resistor Rc, and the other end of the switch tube are connected. The input voltage Vin is sampled and transmitted to the PI controller (proportional-integral controller), and then the modulated wave Vq is obtained. The modulated wave Vq and the carrier signal Vc are compared and amplified to obtain the pulse voltage signal Vg. The pulse voltage signal Vg controls the conduction and switching of the thyristor. off to control the change in resistance.

As shown in Figure 2, a specific example circuit diagram is given. given input voltage

V _in = sin y

In the formula

y=100t

After the voltage detector V is sampled, it is integrated, scaled up and added to the constant term to obtain

V ₂ ＝∫V _in dt＝cos(100t)

Set the carrier signal as a triangle wave with a frequency of 10^5rad/s. At this time, Vq is compared with the triangular wave to obtain the SPWM waveform that controls the on-off of the thyristor, and its duty cycle is

Substitution of d(t) and the product of sum and difference of trigonometric functions can be obtained

In the above formula

x=100000t, means carrier signal;

Indicates the integral of the input voltage, that is, the magnetic flux;

Represents the functional relationship between magnetic flux and input voltage;

As shown in Figure 3. Through the SPWM waveform, the resistance value connected in parallel with the switch changes, and its resistance value is

d(t)R _off ,

Due to the filtering of inductors and capacitors, the memristor value of the entire circuit is

It can be seen that the resistance value of the circuit is a resistance value related to the magnetic flux, which conforms to the definition formula of the memristor. The volt-ampere characteristic curve of its current and voltage presents the "oblique figure-eight" model of the memristor. Its volt-ampere characteristic curve is shown in Fig. 4.

In summary, the present invention discloses a high-power memristor circuit realized by SPWM control, including an inductor L, a capacitor C, a resistor Rc, a resistor R1, a resistor R2, a thyristor, a PI controller, and a comparison amplifier. The inductance L makes the current continuous, and forms a low-pass filter with the capacitor C and the resistor Rc, so that the input voltage and the output current have the same phase. The PI controller integrates the input voltage to obtain the flux variable, and the comparison amplifier compares the flux variable with the triangular carrier wave to obtain the required SPWM waveform. The thyristor and resistor R2 are connected in parallel to form a variable resistance module controlled by the SPWM waveform. The invention uses the SPWM waveform to change the resistance value of the variable resistance module so that it conforms to the resistance value characteristics of the memristor; using power devices such as resistors, inductors, capacitors, and thyristors, the circuit structure is simple, and theoretically any level of power memristor can be realized ; Use a low-pass filter to make the output current continuous and have the same phase as the input voltage.

The above-mentioned embodiment is a preferred embodiment of the present invention, but the embodiment of the present invention is not limited by the above-mentioned embodiment, and any other changes, modifications, substitutions, combinations, Simplifications should be equivalent replacement methods, and all are included in the protection scope of the present invention.

Claims (8)

1. A high power memristor circuit implemented with SPWM control, the circuit comprising: the high-power memristor circuit comprises a low-pass filter, a variable resistance module, a PI controller and a comparison amplifier, wherein an input voltage Vin is connected with an input end of the low-pass filter after being connected with the high-power memristor circuit through a first input end and a second input end, and an output end of the low-pass filter is connected with the variable resistance module;

the input voltage Vin is sampled and transmitted to the PI controller, the PI controller outputs an adjusting wave Vq and then compares and amplifies a carrier signal Vc through the comparison amplifier to obtain a pulse voltage signal Vg, and the pulse voltage signal Vg controls the resistance change of the variable resistance module.

2. A high power memristor circuit implemented by SPWM control as claimed in claim 1, wherein the low pass filter comprises an inductor L, a capacitor C and a resistor Rc, one end of the capacitor C and one end of the resistor Rc are connected in parallel and then connected in series with one end of the inductor L;

the first input end is connected with the other end of the inductor L, and the second input end is connected with the other ends of the capacitor C and the resistor Rc which are connected in parallel.

3. The high-power memristor circuit implemented by SPWM control according to claim 2, wherein the variable resistance module comprises a resistor R1, a resistor R2 and a thyristor, one end of the resistor R2 and one end of the thyristor are connected in parallel and then connected in series with one end of the resistor R1, the other end of the resistor R1 is connected with one end of the inductor, the other end of the resistor R2 and the other end of the thyristor are connected in parallel and connected with the other end of the capacitor C and the resistor Rc, and the variable resistance module is a variable resistor implemented by simulating a circuit structure formed by the resistor R1, the resistor R2 and the thyristor.

4. A high power memristor circuit implemented by SPWM control as claimed in claim 3 wherein the pulse voltage signal Vg controls the on and off of the thyristor to control the resistance change of the variable resistance block.

5. A high power memristor circuit implemented with SPWM control as claimed in claim 2 wherein the inductor L makes the output current continuous, the low pass filter makes the output current have the same phase as the input voltage Vin, and the low pass filter makes the high power memristor circuit resistive as a whole.

6. A high power memristor circuit implemented with SPWM control as claimed in claim 1,

the PI controller integrates the input voltage Vin to obtain a magnetic flux variable, the magnetic flux variable is subjected to proportional amplification and is added with a constant term to obtain an adjusting wave Vq, and the comparing amplifier compares the adjusting wave Vq with the carrier signal Vc to obtain the pulse voltage signal Vg.

7. A high power memristor circuit implemented with SPWM control as claimed in claim 6 wherein the carrier signal Vc is a triangular carrier.

8. A high power memristor circuit implemented with SPWM control as claimed in any one of claims 1 to 7,

the high-power memristor circuit has the memristance value of

In the above formula, R₁Is the resistance of resistor R1, R₂Is the resistance of resistor R2, d (t) is the duty cycle,

wherein,

according to the basic theory of the circuit,represents the integral of the input voltage Vin with respect to the time variable t, i.e., the magnetic flux;

representing the flux as a function of the input voltage Vin.