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CN105912066A - Low-power-consumption high-PSRR band-gap reference circuit - Google Patents

Low-power-consumption high-PSRR band-gap reference circuit Download PDF

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CN105912066A
CN105912066A CN201610388834.3A CN201610388834A CN105912066A CN 105912066 A CN105912066 A CN 105912066A CN 201610388834 A CN201610388834 A CN 201610388834A CN 105912066 A CN105912066 A CN 105912066A
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transistor
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CN105912066B (en
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李娅妮
庞光艺
朱樟明
杨银堂
孙亚东
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Xidian University
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    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current 
    • G05F1/46Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/565Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation

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Abstract

本发明公开了一种低功耗高PSRR的带隙基准电路,其特征在于,由无运放带隙核心电路、启动电路和负反馈控制环路组成,在无运放带隙核心电路中,电阻R6的阻值远远大于电阻R4及电阻R5,使得晶体管Q4的基极电流减小到可以忽略的程度,同时避免了使用运算放大器,降低了电路设计的复杂性,进一步减小了整体功耗;在负反馈控制环路中,检测节点V2的电压变化以及A、B节点电位误差,分别通过该环路中的晶体管MN2产生负反馈电压及电流镜的镜像作用,抑制电源电压变化和器件失配对电路造成负面的影响,提高了带隙电路的稳定性;在启动电路中,通过晶体管MP4触发带隙电路启动工作,使得启动电路在带隙电路正常工作后能够快速的关断,节省了电路的功耗。

The invention discloses a bandgap reference circuit with low power consumption and high PSRR, which is characterized in that it is composed of a bandgap core circuit without an op amp, a start-up circuit and a negative feedback control loop, and in the bandgap core circuit without an op amp, The resistance value of resistor R6 is much larger than that of resistor R4 and resistor R5, so that the base current of transistor Q4 is reduced to a negligible level, and at the same time avoids the use of operational amplifiers, reduces the complexity of circuit design, and further reduces the overall power In the negative feedback control loop, the voltage change of node V2 and the potential error of nodes A and B are detected, and the negative feedback voltage and the mirror effect of the current mirror are generated respectively through the transistor MN2 in the loop to suppress the power supply voltage change and the device The mismatch has a negative impact on the circuit and improves the stability of the bandgap circuit; in the start-up circuit, the start-up of the bandgap circuit is triggered by the transistor MP4, so that the start-up circuit can be quickly shut down after the bandgap circuit works normally, saving power consumption of the circuit.

Description

一种低功耗高PSRR的带隙基准电路A Bandgap Reference Circuit with Low Power Consumption and High PSRR

技术领域technical field

本发明涉及一种带隙基准电路,具体涉及一种低功耗高PSRR的带隙基准电路,属于电学技术领域。The invention relates to a bandgap reference circuit, in particular to a bandgap reference circuit with low power consumption and high PSRR, and belongs to the field of electrical technology.

背景技术Background technique

模拟集成电路的一个主要电路结构就是带隙基准源,广泛地用于模拟混合集成电路中,用以提供一个不依赖于电源电压和温度变化的稳定的直流电压。传统的带隙基准电压源(附图1)当中普遍地要使用到运算放大器,然而由于CMOS技术的低电压趋势,在深亚微米工艺下,晶体管的本征增益典型值大约为20-30dB,这将导致运算放大器的性能下降,无法满足带隙基准电路对其增益、带宽等的要求,降低了带隙基准电路的PSRR及其稳定性。因此,必须采用新的设计技术和电路结构来实现低压低功耗带隙基准源,以提高电路性能,获得良好的带隙性能;其他技术如高阶温度补偿等也可以用来提高带隙基准电压源的性能,然而这些技术的使用不可避免地会增加电路的功耗,这在低功耗应用中是无法容忍的,因此从功耗的角度看,低功耗带隙基准电压源更加受到人们的关注。One of the main circuit structures of analog integrated circuits is the bandgap reference source, which is widely used in analog hybrid integrated circuits to provide a stable DC voltage that does not depend on power supply voltage and temperature changes. Operational amplifiers are commonly used in traditional bandgap reference voltage sources (Fig. 1). However, due to the low voltage trend of CMOS technology, the typical value of intrinsic gain of transistors is about 20-30dB in deep submicron technology. This will lead to the degradation of the performance of the operational amplifier, which cannot meet the requirements of the bandgap reference circuit on its gain and bandwidth, and reduces the PSRR and stability of the bandgap reference circuit. Therefore, new design techniques and circuit structures must be used to realize low-voltage and low-power bandgap reference sources to improve circuit performance and obtain good bandgap performance; other techniques such as high-order temperature compensation can also be used to improve bandgap reference However, the use of these technologies will inevitably increase the power consumption of the circuit, which cannot be tolerated in low-power applications. Therefore, from the perspective of power consumption, low-power bandgap voltage references are more affected. people's attention.

图1所示的是传统的带隙基准电路的电路图。在图1所示的电路中,由于运算放大器的使用,不仅增加了整体电路的核心面积,而且使其消耗的功率大大上升,很大程度上增加了带隙基准电路的功耗及电路设计的复杂性,同时,如果运算放大器的设计不合理,其非理想因素如失调等若无法得到很好的消除、抑制,将会严重影响到带隙基准的稳定性和精确性,甚至可能导致带隙基准电路功能的丧失。What Fig. 1 shows is the circuit diagram of the traditional bandgap reference circuit. In the circuit shown in Figure 1, due to the use of operational amplifiers, not only the core area of the overall circuit is increased, but also the power consumption is greatly increased, which greatly increases the power consumption of the bandgap reference circuit and the limitations of the circuit design. At the same time, if the design of the operational amplifier is unreasonable, if its non-ideal factors such as offset cannot be well eliminated and suppressed, it will seriously affect the stability and accuracy of the bandgap reference, and may even cause the bandgap Loss of function of the reference circuit.

发明内容Contents of the invention

为解决现有技术的不足,本发明的目的在于提供一种低功耗、高PSRR的带隙基准电路。In order to solve the deficiencies of the prior art, the object of the present invention is to provide a bandgap reference circuit with low power consumption and high PSRR.

为了实现上述目标,本发明采用如下的技术方案:In order to achieve the above object, the present invention adopts the following technical solutions:

一种低功耗高PSRR的带隙基准电路,其特征在于,由无运放带隙核心电路、启动电路和负反馈控制环路组成,其中,A bandgap reference circuit with low power consumption and high PSRR is characterized in that it is composed of a bandgap core circuit without an operational amplifier, a start-up circuit and a negative feedback control loop, wherein,

无运放带隙核心电路:用于实现电路核心功能,产生所需的带隙基准参考电压;No operational amplifier bandgap core circuit: used to realize the core function of the circuit and generate the required bandgap reference voltage;

启动电路:用于完成带隙基准电路的启动,使带隙基准电路进入正常工作状态;Start-up circuit: used to complete the start-up of the bandgap reference circuit, so that the bandgap reference circuit enters a normal working state;

负反馈控制环路:用于控制、提高带隙基准电路的稳定性,消除运放的使用,减小功耗及芯片面积;Negative feedback control loop: used to control and improve the stability of the bandgap reference circuit, eliminate the use of operational amplifiers, reduce power consumption and chip area;

整个电路的工作过程是:电路上电,启动电路首先开始工作,开启无运放带隙核心电路,带隙基准电路产生参考电压,同时,负反馈控制环路抑制非理想因素对电路的恶性影响。The working process of the whole circuit is: the circuit is powered on, the start-up circuit starts to work first, the core circuit without op amp bandgap is turned on, the bandgap reference circuit generates a reference voltage, and at the same time, the negative feedback control loop suppresses the harmful influence of non-ideal factors on the circuit .

前述的低功耗高PSRR的带隙基准电路,其特征在于,前述无运放带隙核心电路主要由晶体管Q3、晶体管Q4、电阻R1、电阻R2、电阻R3、电阻R4、电阻R5和电阻R6组成,前述晶体管为NPN型双极晶体管,前述电阻R6的阻值远远大于电阻R4及电阻R5,其中,The aforementioned bandgap reference circuit with low power consumption and high PSRR is characterized in that the bandgap core circuit without an operational amplifier is mainly composed of transistor Q3, transistor Q4, resistor R1, resistor R2, resistor R3, resistor R4, resistor R5 and resistor R6 The aforementioned transistor is an NPN type bipolar transistor, and the resistance value of the aforementioned resistor R6 is much larger than that of the resistor R4 and the resistor R5, wherein,

晶体管Q3的发射极与地相连,晶体管Q3的基极与电阻R2的一端、电阻R4的一端相连,晶体管Q3的集电极与电阻R4的另一端、电阻R6的一端相连;The emitter of the transistor Q3 is connected to the ground, the base of the transistor Q3 is connected to one end of the resistor R2 and one end of the resistor R4, and the collector of the transistor Q3 is connected to the other end of the resistor R4 and one end of the resistor R6;

晶体管Q4的发射极与电阻R5的一端相连,电阻R5的另一端与地相连,晶体管Q4的基极与电阻R6的另一端相连,晶体管Q4的集电极与电阻R3的一端相连,电阻R3的另一端与电阻R2的另一端相连,二者的连接节点与电阻R1的一端相连;The emitter of the transistor Q4 is connected to one end of the resistor R5, the other end of the resistor R5 is connected to the ground, the base of the transistor Q4 is connected to the other end of the resistor R6, the collector of the transistor Q4 is connected to one end of the resistor R3, and the other end of the resistor R3 One end is connected to the other end of the resistor R2, and the connection node of the two is connected to one end of the resistor R1;

其中,晶体管Q3的基极为无运放带隙核心电路的第一钳位匹配端,其与负反馈控制环路的第一反馈检测输入端相连;晶体管Q4的集电极为无运放带隙核心电路的第二钳位匹配端,其与负反馈控制环路的第二反馈检测输入端相连;电阻R1的另一端为无运放带隙核心电路的输出端,其与带隙基准输出电压Vref相连。Among them, the base of transistor Q3 is the first clamp matching end of the core circuit without op amp bandgap, which is connected to the first feedback detection input end of the negative feedback control loop; the collector of transistor Q4 is the core circuit without op amp bandgap The second clamp matching end of the circuit is connected to the second feedback detection input end of the negative feedback control loop; the other end of the resistor R1 is the output end of the non-op-amp bandgap core circuit, which is connected to the bandgap reference output voltage V ref is connected.

前述的低功耗高PSRR的带隙基准电路,其特征在于,前述启动电路主要由晶体管MP4、晶体管MP5、晶体管Q5、晶体管Q6、电阻R7、电阻R8和电阻R9组成,前述晶体管MP4、晶体管MP5为PMOS晶体管,前述晶体管Q5、晶体管Q6为NPN型双极晶体管,其中,The aforementioned bandgap reference circuit with low power consumption and high PSRR is characterized in that the aforementioned start-up circuit is mainly composed of transistor MP4, transistor MP5, transistor Q5, transistor Q6, resistor R7, resistor R8 and resistor R9, and the aforementioned transistor MP4, transistor MP5 It is a PMOS transistor, and the aforementioned transistor Q5 and transistor Q6 are NPN type bipolar transistors, wherein,

晶体管MP4的栅端与晶体管MP5的漏端、晶体管Q6的集电极相连,晶体管MP4的源端与电源电压相连,晶体管MP4的漏端与电阻R7的一端相连,电阻R7的另一端为启动电路的输出端,其与负反馈控制环路的启动输入端相连;The gate terminal of the transistor MP4 is connected with the drain terminal of the transistor MP5 and the collector of the transistor Q6, the source terminal of the transistor MP4 is connected with the power supply voltage, the drain terminal of the transistor MP4 is connected with one terminal of the resistor R7, and the other terminal of the resistor R7 is used for starting the circuit an output terminal connected to the start input terminal of the negative feedback control loop;

晶体管MP5的源端与电源电压相连,晶体管MP5的漏端与晶体管Q6的集电极相连,晶体管MP5的栅端为启动电路的开关端口,其与负反馈控制环路中晶体管MP2的栅端相连;The source terminal of the transistor MP5 is connected to the power supply voltage, the drain terminal of the transistor MP5 is connected to the collector of the transistor Q6, and the gate terminal of the transistor MP5 is a switch port of the startup circuit, which is connected to the gate terminal of the transistor MP2 in the negative feedback control loop;

晶体管Q6的基极与晶体管Q5的集电极相连,晶体管Q6的发射极与地相连;The base of the transistor Q6 is connected to the collector of the transistor Q5, and the emitter of the transistor Q6 is connected to the ground;

晶体管Q5的基极与电阻R8的一端、电阻R9的一端相连,晶体管Q5的集电极与电阻R8的另一端相连,晶体管Q5的发射极与地相连,电阻R9的另一端接电源电压。The base of the transistor Q5 is connected to one end of the resistor R8 and one end of the resistor R9, the collector of the transistor Q5 is connected to the other end of the resistor R8, the emitter of the transistor Q5 is connected to the ground, and the other end of the resistor R9 is connected to the power supply voltage.

前述的低功耗高PSRR的带隙基准电路,其特征在于,前述负反馈控制环路主要由晶体管MP1、晶体管MP2、晶体管MP3、晶体管MN1、晶体管MN2、晶体管MN3、晶体管Q1、晶体管Q2、电阻R0和电阻R10组成,前述晶体管MP1、晶体管MP2、晶体管MP3为PMOS晶体管,前述晶体管MN1、晶体管MN2、晶体管MN3为NMOS晶体管,前述晶体管Q1、晶体管Q2为NPN型晶体管,其中,The aforementioned bandgap reference circuit with low power consumption and high PSRR is characterized in that the aforementioned negative feedback control loop is mainly composed of transistor MP1, transistor MP2, transistor MP3, transistor MN1, transistor MN2, transistor MN3, transistor Q1, transistor Q2, resistor Composed of R0 and resistor R10, the aforementioned transistor MP1, transistor MP2, and transistor MP3 are PMOS transistors, the aforementioned transistor MN1, transistor MN2, and transistor MN3 are NMOS transistors, and the aforementioned transistor Q1 and transistor Q2 are NPN transistors, wherein,

晶体管MP1的栅端、晶体管MP2的栅端和晶体管MP3的栅端相连,晶体管MP1的源端、晶体管MP2的源端、晶体管MP3的源端与电源电压相连,晶体管MP1的漏端与晶体管MN1的源端、晶体管Q1的集电极相连,晶体管MP2的漏端与晶体管MP2的栅端、晶体管MN1的漏端相连,晶体管MP3的漏端与晶体管MN1的栅端、晶体管MN2的栅端、晶体管MN2的漏端、晶体管MN3的栅端相连;The gate terminal of the transistor MP1, the gate terminal of the transistor MP2 are connected to the gate terminal of the transistor MP3, the source terminal of the transistor MP1, the source terminal of the transistor MP2, and the source terminal of the transistor MP3 are connected to the power supply voltage, and the drain terminal of the transistor MP1 is connected to the transistor MN1. The source terminal is connected to the collector of the transistor Q1, the drain terminal of the transistor MP2 is connected to the gate terminal of the transistor MP2, and the drain terminal of the transistor MN1, and the drain terminal of the transistor MP3 is connected to the gate terminal of the transistor MN1, the gate terminal of the transistor MN2, and the gate terminal of the transistor MN2. The drain terminal is connected to the gate terminal of the transistor MN3;

晶体管MN1的栅端与晶体管MN2的栅端、晶体管MN2的漏端、晶体管MN3的栅端相连,晶体管MN2的漏端为负反馈控制环路的启动输入端,其与启动电路的输出端相连;The gate terminal of the transistor MN1 is connected to the gate terminal of the transistor MN2, the drain terminal of the transistor MN2, and the gate terminal of the transistor MN3, and the drain terminal of the transistor MN2 is the starting input terminal of the negative feedback control loop, which is connected to the output terminal of the starting circuit;

晶体管MN1的源端与晶体管Q1的集电极相连,晶体管MN2的源端与晶体管Q2的集电极相连,晶体管MN3的源端与带隙基准输出电压Vref相连,晶体管MN3的漏端与电阻R0的一端相连,电阻R0的另一端与电源电压相连;The source terminal of the transistor MN1 is connected to the collector of the transistor Q1, the source terminal of the transistor MN2 is connected to the collector of the transistor Q2, the source terminal of the transistor MN3 is connected to the bandgap reference output voltage Vref , the drain terminal of the transistor MN3 is connected to the resistor R0 One end is connected, and the other end of the resistor R0 is connected to the power supply voltage;

晶体管Q1的发射极与电阻R10的一端相连,电阻R10的另一端与地相连,晶体管Q1的基极为负反馈控制环路的第一反馈检测输入端,其与无运放带隙核心电路的第一钳位匹配端相连;The emitter of the transistor Q1 is connected to one end of the resistor R10, and the other end of the resistor R10 is connected to the ground. The base of the transistor Q1 is the first feedback detection input end of the negative feedback control loop, and it is connected to the first end of the bandgap-free core circuit of the op amp. A clamp matching terminal is connected;

晶体管Q2的发射极与地相连,晶体管Q2的基极为负反馈控制环路的第二反馈检测输入端,其与无运放带隙核心电路的第二钳位匹配端相连。The emitter of the transistor Q2 is connected to the ground, and the base of the transistor Q2 is the second feedback detection input terminal of the negative feedback control loop, which is connected to the second clamp matching terminal of the non-op-amp bandgap core circuit.

本发明的有益之处在于:The benefits of the present invention are:

(一)具有更低的功耗(1) Has lower power consumption

在带隙基准电路中,鉴于传统的带隙基准电路利用复杂的运算放大器来提高带隙基准电路的稳定性,而运算放大器占据了绝大部分的功耗,所以我们改用负反馈控制环路技术来提高带隙基准电路的稳定性,避免使用高功耗的运算放大器,节省的功耗可观,非常适用于低功耗场合。In the bandgap reference circuit, since the traditional bandgap reference circuit uses a complex operational amplifier to improve the stability of the bandgap reference circuit, and the operational amplifier occupies most of the power consumption, we use a negative feedback control loop instead Technology to improve the stability of the bandgap reference circuit, avoid the use of high-power operational amplifiers, save considerable power consumption, and is very suitable for low-power applications.

(二)具有更高的电源电压抑制比(PSRR)和稳定性(2) Higher power supply rejection ratio (PSRR) and stability

在本发明的带隙基准电路中,由晶体管Q1、晶体管Q2、晶体管MP1、晶体管MP2、晶体管MP3、晶体管MN1、晶体管MN2组成负反馈控制环路,同时产生偏置。其中,晶体管MP1、晶体管MP2和晶体管MP3构成电流镜,分别为3、1、4个单元晶体管并联而成,在相同的电压偏置条件下,流过晶体管MP1、晶体管MP2、晶体管MP3的电流比例将为3:1:4,流过晶体管Q1的电流为晶体管MP1和晶体管MP2的电流之和,而流过晶体管Q2的电流即为流过晶体管MP3的电流,此处由于晶体管Q1、晶体管Q2的基极电流很小而被忽略,进而保证了电流I4和I5相等。此外,晶体管MP1、晶体管MP2、晶体管MP3、晶体管MN1、晶体管MN2共同构成了共源共栅电流镜,一旦电源电压发生变化,或者失调电压的存在,借助于负反馈机制将有利于抑制电源电压的波动,提高电源电压抑制比。In the bandgap reference circuit of the present invention, a negative feedback control loop is composed of transistor Q1, transistor Q2, transistor MP1, transistor MP2, transistor MP3, transistor MN1, and transistor MN2, and bias is generated at the same time. Among them, the transistor MP1, the transistor MP2 and the transistor MP3 form a current mirror, which is formed by parallel connection of 3, 1 and 4 unit transistors respectively. Under the same voltage bias condition, the ratio of the current flowing through the transistor MP1, the transistor MP2 and the transistor MP3 It will be 3:1:4, the current flowing through the transistor Q1 is the sum of the currents of the transistor MP1 and the transistor MP2, and the current flowing through the transistor Q2 is the current flowing through the transistor MP3, here due to the transistor Q1, the transistor Q2 The base current is so small that it is ignored, thus ensuring that the currents I4 and I5 are equal. In addition, transistor MP1, transistor MP2, transistor MP3, transistor MN1, and transistor MN2 together constitute a cascode current mirror. Once the power supply voltage changes or there is an offset voltage, the negative feedback mechanism will help suppress the power supply voltage. fluctuations, improve the power supply voltage rejection ratio.

就传统带隙基准电路结构而言,本发明的带隙基准电路使用负反馈环路控制技术的带隙基准电路具有更高的电源电压抑制比(PSRR)和稳定性。As far as the traditional bandgap reference circuit structure is concerned, the bandgap reference circuit of the present invention using the negative feedback loop control technology has higher power supply voltage rejection ratio (PSRR) and stability.

(三)具有更简单的电路结构和更小核心面积(3) It has a simpler circuit structure and a smaller core area

在本发明的带隙基准电压源电路中,相比于传统带隙基准电压源,消除复杂的运算放大器的使用是本发明电路的一大特点,得益于此,整个带隙电路在结构上更为简单,无需使用复杂的电路设计技术,因而在设计层面也更为方便,相应地占用的芯片面积也随之减少,大大降低了生产成本。In the bandgap reference voltage source circuit of the present invention, compared with the traditional bandgap reference voltage source, eliminating the use of complex operational amplifiers is a major feature of the circuit of the present invention. Thanks to this, the entire bandgap circuit is structurally It is simpler and does not need to use complex circuit design technology, so it is more convenient at the design level, and the chip area occupied is correspondingly reduced, which greatly reduces the production cost.

附图说明Description of drawings

图1是传统的带隙基准电路的电路图;Fig. 1 is the circuit diagram of traditional bandgap reference circuit;

图2(a)是本发明的带隙基准电路的组成原理图;Fig. 2 (a) is the composition schematic diagram of the bandgap reference circuit of the present invention;

图2(b)是图2(a)中的带隙基准电路的电路图;Fig. 2 (b) is the circuit diagram of the bandgap reference circuit in Fig. 2 (a);

图3是图2(b)中的无运放带隙核心电路的电路图;Fig. 3 is the circuit diagram of the core circuit without operational amplifier bandgap among Fig. 2 (b);

图4是图2(b)中的反馈控制环路的电路图;Fig. 4 is the circuit diagram of the feedback control loop among Fig. 2 (b);

图5是图2(b)中的启动电路的电路图。Fig. 5 is a circuit diagram of the starting circuit in Fig. 2(b).

具体实施方式detailed description

本发明的带隙基准电路,其是在传统带隙基准电路的基础上,结合负反馈控制环路技术设计而成的,设计出的带隙电路不仅具有更低的功耗,而且具有更高的电源电压抑制比(PSRR)。The bandgap reference circuit of the present invention is designed on the basis of the traditional bandgap reference circuit and combined with negative feedback control loop technology. The designed bandgap circuit not only has lower power consumption, but also has higher power supply rejection ratio (PSRR).

以下结合附图和具体实施例对本发明作具体的介绍。The present invention will be specifically introduced below in conjunction with the accompanying drawings and specific embodiments.

参照图2(a)和图2(b),本发明的低功耗高PSRR的带隙基准电路由无运放带隙核心电路、启动电路和负反馈控制环路组成,其中,With reference to Fig. 2 (a) and Fig. 2 (b), the bandgap reference circuit of low power consumption high PSRR of the present invention is made up of no operational amplifier bandgap core circuit, start-up circuit and negative feedback control loop, wherein,

无运放带隙核心电路:用于实现电路核心功能,产生所需的带隙基准参考电压。No op amp bandgap core circuit: used to realize the core function of the circuit and generate the required bandgap reference voltage.

启动电路:用于完成带隙基准电路的正常启动,使带隙基准电路进入正常工作状态。Start-up circuit: used to complete the normal start-up of the bandgap reference circuit, so that the bandgap reference circuit enters a normal working state.

负反馈控制环路:用于控制、提高带隙基准电路的稳定性,消除运放的使用,减小功耗及芯片面积。Negative feedback control loop: used to control and improve the stability of the bandgap reference circuit, eliminate the use of operational amplifiers, and reduce power consumption and chip area.

整个电路的工作过程是:电路上电,启动电路首先开始工作,开启无运放带隙核心电路,带隙基准电路产生参考电压,同时,负反馈控制环路抑制非理想因素(如电源电压波动、器件失配等)对电路的恶性影响,从而提高电路的稳定性,保证电路的功能实现。The working process of the whole circuit is: the circuit is powered on, the startup circuit starts to work first, the core circuit without the op amp bandgap is turned on, the bandgap reference circuit generates a reference voltage, and at the same time, the negative feedback control loop suppresses non-ideal factors (such as power supply voltage fluctuations , Device mismatch, etc.) have a vicious influence on the circuit, thereby improving the stability of the circuit and ensuring the realization of the function of the circuit.

下面分别详细介绍无运放带隙核心电路、启动电路和负反馈控制环路。The following describes in detail the non-op amp bandgap core circuit, start-up circuit and negative feedback control loop.

一、无运放带隙核心电路1. No op amp bandgap core circuit

参照图3,无运放带隙核心电路主要由晶体管Q3、晶体管Q4、电阻R1、电阻R2、电阻R3、电阻R4、电阻R5和电阻R6组成,其中,晶体管为NPN型双极晶体管,电阻R6的阻值远远大于电阻R4及电阻R5。Referring to Figure 3, the non-op-amp bandgap core circuit is mainly composed of transistors Q3, transistors Q4, resistors R1, resistors R2, resistors R3, resistors R4, resistors R5 and resistors R6, wherein the transistors are NPN bipolar transistors, and the resistors R6 The resistance value is much larger than the resistor R4 and the resistor R5.

各元器件之间的连接关系如下:The connection relationship between each component is as follows:

晶体管Q3的发射极与地相连,晶体管Q3的基极与电阻R2的一端、电阻R4的一端相连,晶体管Q3的集电极与电阻R4的另一端、电阻R6的一端相连;The emitter of the transistor Q3 is connected to the ground, the base of the transistor Q3 is connected to one end of the resistor R2 and one end of the resistor R4, and the collector of the transistor Q3 is connected to the other end of the resistor R4 and one end of the resistor R6;

晶体管Q4的发射极与电阻R5的一端相连,电阻R5的另一端与地相连,晶体管Q4的基极与电阻R6的另一端相连,晶体管Q4的集电极与电阻R3的一端相连,电阻R3的另一端与电阻R2的另一端相连,二者的连接节点(即节点C)与电阻R1的一端相连。The emitter of the transistor Q4 is connected to one end of the resistor R5, the other end of the resistor R5 is connected to the ground, the base of the transistor Q4 is connected to the other end of the resistor R6, the collector of the transistor Q4 is connected to one end of the resistor R3, and the other end of the resistor R3 One end is connected to the other end of the resistor R2, and the connection node (namely node C) of the two is connected to one end of the resistor R1.

在该无运放带隙核心电路中:In this no-op-amp bandgap core circuit:

(1)晶体管Q3的基极为无运放带隙核心电路的第一钳位匹配端(即节点A),其与负反馈控制环路的第一反馈检测输入端(即晶体管Q1的基极)相连;(1) The base of the transistor Q3 is the first clamp matching end (i.e. node A) of the bandgap-free core circuit of the op amp, which is connected to the first feedback detection input end of the negative feedback control loop (i.e. the base of the transistor Q1) connected;

(2)晶体管Q4的集电极为无运放带隙核心电路的第二钳位匹配端(即节点B),其与负反馈控制环路的第二反馈检测输入端(即晶体管Q2的基极)相连;(2) The collector of transistor Q4 is the second clamping matching end (i.e. node B) of the core circuit without op-amp bandgap, which is connected to the second feedback detection input end of the negative feedback control loop (i.e. the base of transistor Q2 ) connected;

(3)电阻R1的另一端为无运放带隙核心电路的输出端,其与带隙基准输出电压Vref相连。(3) The other end of the resistor R1 is the output end of the non-op-amp bandgap core circuit, which is connected to the bandgap reference output voltage V ref .

图1是传统的带隙基准电压源的电路图。在图1所示的电路中,由于运算放大器的使用,使得电路的结构复杂性及功耗明显增加。Figure 1 is a circuit diagram of a conventional bandgap reference voltage source. In the circuit shown in Figure 1, due to the use of operational amplifiers, the structural complexity and power consumption of the circuit increase significantly.

本设计中的带隙基准电路就是在图1所示的电路的基础上进行的改进,目的是消除运算放大器的使用,简化电路结构设计,降低电路的功耗。具体如下:The bandgap reference circuit in this design is an improvement on the basis of the circuit shown in Figure 1. The purpose is to eliminate the use of operational amplifiers, simplify the circuit structure design, and reduce the power consumption of the circuit. details as follows:

在暂时不考虑器件失配的情况下,通过设置电阻R2、电阻R3的阻值相等,来使得节点A、节点B的电位相等,进而使得晶体管Q3的基射极电压VBE3等于晶体管Q4的基射极电压VBE4,由此可以获得一个以基射极压差ΔVBE表示的PTAT电流,该电流流经电阻后可以获得一个正温度系数的电压,此正温度系数电压与具有负温度系数的晶体管Q3的基射极电压VBE3求和之后便得到希望的带隙基准输出电压VrefIn the case of temporarily disregarding device mismatch, the potentials of nodes A and B are equalized by setting the resistance values of resistors R2 and R3 to be equal, so that the base-emitter voltage V BE3 of transistor Q3 is equal to the base-emitter voltage V BE3 of transistor Q4 Emitter voltage V BE4 , thus a PTAT current represented by the base-emitter voltage difference ΔV BE can be obtained. After the current flows through the resistor, a voltage with a positive temperature coefficient can be obtained. The desired bandgap reference output voltage V ref is obtained after the base-emitter voltage V BE3 of the transistor Q3 is summed.

可见,在无运放带隙核心电路中,通过设置电阻R6的阻值,使其远远大于电阻R4及电阻R5,使得晶体管Q4的基极电流减小到可以忽略的程度,这不仅有利于提高带隙输出电压的精度,而且避免了使用运算放大器,降低了电路设计的复杂性,进一步减小了整体功耗。It can be seen that in the non-op-amp bandgap core circuit, by setting the resistance value of resistor R6 to be much larger than resistor R4 and resistor R5, the base current of transistor Q4 is reduced to a negligible level, which is not only beneficial The accuracy of the bandgap output voltage is improved, and the use of an operational amplifier is avoided, the complexity of circuit design is reduced, and the overall power consumption is further reduced.

二、启动电路2. Start circuit

参照图5,启动电路主要由晶体管MP4、晶体管MP5、晶体管Q5、晶体管Q6、电阻R7、电阻R8和电阻R9组成,其中,晶体管MP4、晶体管MP5为PMOS晶体管,晶体管Q5、晶体管Q6为NPN型双极晶体管。Referring to Figure 5, the starting circuit is mainly composed of transistor MP4, transistor MP5, transistor Q5, transistor Q6, resistor R7, resistor R8 and resistor R9, wherein transistor MP4 and transistor MP5 are PMOS transistors, transistor Q5 and transistor Q6 are NPN double pole transistor.

各元器件之间的连接关系如下:The connection relationship between each component is as follows:

晶体管MP4的栅端与晶体管MP5的漏端、晶体管Q6的集电极相连,晶体管MP4的源端与电源电压相连,晶体管MP4的漏端与电阻R7的一端相连,电阻R7的另一端为启动电路的输出端,其与负反馈控制环路的启动输入端(即晶体管MN2的漏端)相连;The gate terminal of the transistor MP4 is connected with the drain terminal of the transistor MP5 and the collector of the transistor Q6, the source terminal of the transistor MP4 is connected with the power supply voltage, the drain terminal of the transistor MP4 is connected with one terminal of the resistor R7, and the other terminal of the resistor R7 is used for starting the circuit an output terminal, which is connected to the start input terminal of the negative feedback control loop (that is, the drain terminal of the transistor MN2);

晶体管MP5的源端与电源电压相连,晶体管MP5的漏端与晶体管Q6的集电极相连,晶体管MP5的栅端为启动电路的开关端口,其与负反馈控制环路的电流镜栅端V1相连;The source terminal of the transistor MP5 is connected to the power supply voltage, the drain terminal of the transistor MP5 is connected to the collector of the transistor Q6, and the gate terminal of the transistor MP5 is a switch port of the starting circuit, which is connected to the current mirror gate terminal V1 of the negative feedback control loop;

晶体管Q6的基极与晶体管Q5的集电极相连,晶体管Q6的发射极与地相连;The base of the transistor Q6 is connected to the collector of the transistor Q5, and the emitter of the transistor Q6 is connected to the ground;

晶体管Q5的基极与电阻R8的一端、电阻R9的一端相连,晶体管Q5的集电极与电阻R8的另一端相连,晶体管Q5的发射极与地相连,电阻R9的另一端接电源电压。The base of the transistor Q5 is connected to one end of the resistor R8 and one end of the resistor R9, the collector of the transistor Q5 is connected to the other end of the resistor R8, the emitter of the transistor Q5 is connected to the ground, and the other end of the resistor R9 is connected to the power supply voltage.

在图5所示的启动电路中,在电路上电初始,晶体管Q5、晶体管Q6均处于关断状态,随着电压的上升,晶体管Q6管打开,这导致电压V4输出为较低点平,使晶体管MP4管导通,进而使带隙基准电路启动,随着电压的继续升高,晶体管Q5管也打开,使得晶体管Q6管的基极相当于接地,晶体管Q6管就被关断。此时,带隙基准电路已经启动,电流镜栅压V1使得晶体管MP5管也被打开,又将电压V4拉高到高电平,将晶体管MP4关断,这样启动电路与带隙基准电路的连接断开,完成电路的启动。此处电阻R8的阻值远远大于电阻R9的阻值,使得晶体管Q6管基极上的压降小于晶体管Q5管基极上的压降,保证了在带隙基准电路工作时能有效地关闭启动电路。In the start-up circuit shown in Figure 5, when the circuit is initially powered on, both transistors Q5 and Q6 are in the off state, and as the voltage rises, the transistor Q6 is turned on, which causes the voltage V4 to be output at a lower level, making the The transistor MP4 is turned on, and then the bandgap reference circuit is started. As the voltage continues to rise, the transistor Q5 is also turned on, so that the base of the transistor Q6 is equivalent to grounding, and the transistor Q6 is turned off. At this time, the bandgap reference circuit has been started, the current mirror grid voltage V1 makes the transistor MP5 tube also be turned on, and the voltage V4 is pulled up to a high level, and the transistor MP4 is turned off, so that the connection between the startup circuit and the bandgap reference circuit Disconnect to complete the start-up of the circuit. Here, the resistance value of resistor R8 is much greater than that of resistor R9, so that the voltage drop on the base of transistor Q6 is smaller than the voltage drop on the base of transistor Q5, which ensures that the bandgap reference circuit can be effectively turned off when the circuit is working. Start the circuit.

可见,在启动电路中,通过晶体管MP4触发带隙电路启动工作,使得启动电路在带隙电路正常工作后能够快速的关断,节省了电路的功耗。It can be seen that in the start-up circuit, the start-up of the bandgap circuit is triggered by the transistor MP4, so that the start-up circuit can be shut down quickly after the bandgap circuit works normally, saving power consumption of the circuit.

三、负反馈控制环路3. Negative feedback control loop

参照图4,负反馈控制环路主要由晶体管MP1、晶体管MP2、晶体管MP3、晶体管MN1、晶体管MN2、晶体管MN3、晶体管Q1、晶体管Q2、电阻R0和电阻R10组成,其中,晶体管MP1、晶体管MP2、晶体管MP3为PMOS晶体管,晶体管MN1、晶体管MN2、晶体管MN3为NMOS晶体管,晶体管Q1、晶体管Q2为NPN型晶体管。Referring to Fig. 4, the negative feedback control loop is mainly composed of transistor MP1, transistor MP2, transistor MP3, transistor MN1, transistor MN2, transistor MN3, transistor Q1, transistor Q2, resistor R0 and resistor R10, wherein transistor MP1, transistor MP2, The transistor MP3 is a PMOS transistor, the transistor MN1 , the transistor MN2 , and the transistor MN3 are NMOS transistors, and the transistor Q1 and the transistor Q2 are NPN transistors.

各元器件之间的连接关系如下:The connection relationship between each component is as follows:

晶体管MP1的栅端、晶体管MP2的栅端和晶体管MP3的栅端相连,晶体管MP1的源端、晶体管MP2的源端、晶体管MP3的源端与电源电压相连,晶体管MP1的漏端与晶体管MN1的源端、晶体管Q1的集电极相连,晶体管MP2的漏端与晶体管MP2的栅端、晶体管MN1的漏端相连,晶体管MP3的漏端与晶体管MN1的栅端、晶体管MN2的栅端、晶体管MN2的漏端、晶体管MN3的栅端相连;The gate terminal of the transistor MP1, the gate terminal of the transistor MP2 are connected to the gate terminal of the transistor MP3, the source terminal of the transistor MP1, the source terminal of the transistor MP2, and the source terminal of the transistor MP3 are connected to the power supply voltage, and the drain terminal of the transistor MP1 is connected to the transistor MN1. The source terminal is connected to the collector of the transistor Q1, the drain terminal of the transistor MP2 is connected to the gate terminal of the transistor MP2, and the drain terminal of the transistor MN1, and the drain terminal of the transistor MP3 is connected to the gate terminal of the transistor MN1, the gate terminal of the transistor MN2, and the gate terminal of the transistor MN2. The drain terminal is connected to the gate terminal of the transistor MN3;

晶体管MN1的栅端与晶体管MN2的栅端、晶体管MN2的漏端、晶体管MN3的栅端相连,晶体管MN2的漏端为负反馈控制环路的另一个输入端,其与启动电路的输出端(即电阻R7的另一端)相连;The gate terminal of the transistor MN1 is connected with the gate terminal of the transistor MN2, the drain terminal of the transistor MN2, and the gate terminal of the transistor MN3, and the drain terminal of the transistor MN2 is another input terminal of the negative feedback control loop, and it is connected with the output terminal of the starting circuit ( That is, the other end of the resistor R7) is connected;

晶体管MN1的源端与晶体管Q1的集电极相连,晶体管MN2的源端与晶体管Q2的集电极相连,晶体管MN3的源端与带隙基准输出电压Vref相连,晶体管MN3的漏端与电阻R0的一端相连,电阻R0的另一端与电源电压相连;The source terminal of the transistor MN1 is connected to the collector of the transistor Q1, the source terminal of the transistor MN2 is connected to the collector of the transistor Q2, the source terminal of the transistor MN3 is connected to the bandgap reference output voltage Vref , the drain terminal of the transistor MN3 is connected to the resistor R0 One end is connected, and the other end of the resistor R0 is connected to the power supply voltage;

晶体管Q1的发射极与电阻R10的一端相连,电阻R10的另一端与地相连,晶体管Q1的基极为负反馈控制环路的第一反馈检测输入端,其与无运放带隙核心电路的第一钳位匹配端(即节点A)相连;The emitter of the transistor Q1 is connected to one end of the resistor R10, and the other end of the resistor R10 is connected to the ground. The base of the transistor Q1 is the first feedback detection input end of the negative feedback control loop, and it is connected to the first end of the bandgap-free core circuit of the op amp. A clamping matching terminal (namely node A) is connected;

晶体管Q2的发射极与地相连,晶体管Q2的基极为负反馈控制环路的第二反馈检测输入端,其与无运放带隙核心电路的第二钳位匹配端(即节点B)相连。The emitter of the transistor Q2 is connected to the ground, and the base of the transistor Q2 is the second feedback detection input terminal of the negative feedback control loop, which is connected to the second clamp matching terminal (namely node B) of the non-op-amp bandgap core circuit.

在图4所示的负反馈控制环路中,晶体管MP2、晶体管MP3、晶体管MN1、晶体管MN2构成共源共栅电流镜,该结构有助于抑制电源的扰动,提高电源电压抑制比。该电路结构对于电压偏置的稳定以及电源波动的抑制原理具体如下:In the negative feedback control loop shown in Figure 4, transistor MP2, transistor MP3, transistor MN1, and transistor MN2 form a cascode current mirror, which helps to suppress power supply disturbance and improve power supply voltage rejection ratio. The principle of the circuit structure for the stability of the voltage bias and the suppression of power fluctuations is as follows:

当电流镜栅压V1受到扰动而产生一个增量时,晶体管MP1、晶体管MP2的栅源电压会减小,继而晶体管MP1、晶体管MP2的电流会减,流过双极管的电流I4与I5要保持不变,就会相应的使电流镜栅压V1被拉低,保持稳定。为了保证I4与I5保持不变,就要抑制晶体管MP1、晶体管MP2两个支路的电流的变化。当电流镜栅压V1受到扰动产生一个增量,晶体管MP1的栅源电压减小,流过晶体管MP1的电流也会相应减小,为了抑制其减小,晶体管MP1的漏源电压会相应增加,即晶体管MN1源端电压V2会减小。源端电压V2减小就会使晶体管MN1的栅源电压相应增大,流过晶体管MN1的电流会随着增大,为了抑制其增加,晶体管MN1的漏源电压会相应的减小,即源端电压V2会减小,抑制了源端电压V2原来的变化,保持稳定。When the gate voltage V1 of the current mirror is disturbed to produce an increase, the gate-source voltage of transistor MP1 and transistor MP2 will decrease, and then the current of transistor MP1 and transistor MP2 will decrease, and the currents I4 and I5 flowing through the bipolar transistors will decrease. If kept unchanged, the grid voltage V1 of the current mirror will be pulled down correspondingly to keep stable. In order to ensure that I4 and I5 remain unchanged, it is necessary to suppress changes in the currents of the two branches of the transistor MP1 and the transistor MP2. When the gate voltage V1 of the current mirror is disturbed to generate an increase, the gate-source voltage of the transistor MP1 decreases, and the current flowing through the transistor MP1 also decreases accordingly. In order to suppress the decrease, the drain-source voltage of the transistor MP1 increases accordingly. That is, the voltage V2 at the source terminal of the transistor MN1 will decrease. The decrease of the source terminal voltage V2 will cause the gate-source voltage of the transistor MN1 to increase correspondingly, and the current flowing through the transistor MN1 will increase accordingly. In order to suppress the increase, the drain-source voltage of the transistor MN1 will decrease accordingly, that is, the source The terminal voltage V2 will decrease, which suppresses the original change of the source terminal voltage V2 and remains stable.

同时该负反馈结构对电源电压的变化也有抑制作用。当电源电压VDD受到一个扰动而增加时,晶体管MP1的栅源电压会增大,继而晶体管MP1的电流会增大。为了抑制这种增大,晶体管MP1的漏源电压会相应减小,即源端电压V2增大。由于源端电压V2的增大,使得晶体管MN1的栅源电压减小,为了保证电流的稳定,就会将电流镜栅压V1拉高使晶体管MN1的栅压增大,即电流镜栅压V1的增大就会相应抵消由于VDD增大而带来的负面影响,使PMOS晶体管的栅源电压基本保持不变,抑制了VDD的变化对电流的影响,提高了电路的电源电压抑制比,增强了电路的稳定性。At the same time, the negative feedback structure also has an inhibitory effect on the change of the power supply voltage. When the power supply voltage VDD is increased by a disturbance, the gate-source voltage of the transistor MP1 will increase, and then the current of the transistor MP1 will increase. In order to suppress this increase, the drain-source voltage of the transistor MP1 will decrease accordingly, that is, the source terminal voltage V2 will increase. Due to the increase of the source terminal voltage V2, the gate-source voltage of the transistor MN1 decreases. In order to ensure the stability of the current, the current mirror gate voltage V1 will be pulled up to increase the gate voltage of the transistor MN1, that is, the current mirror gate voltage V1 The increase of VDD will correspondingly offset the negative impact caused by the increase of VDD, keep the gate-source voltage of the PMOS transistor basically unchanged, suppress the influence of VDD changes on the current, improve the power supply voltage rejection ratio of the circuit, and enhance the stability of the circuit.

对于器件失配,该负反馈结构也具备有抑制作用。若VA>VB,则流经晶体管Q1的电流I4会上升,由于电流镜的镜像作用,会使得流经晶体管Q2的电流I5也会上升,即晶体管Q2的基射极电压升高,而晶体管Q2的发射极电压因接地而保持不变,故晶体管Q2的基极电压VB会被抬高,缩小与VA的差距。For device mismatch, the negative feedback structure also has a suppressive effect. If VA>VB, the current I4 flowing through the transistor Q1 will rise, and due to the mirror effect of the current mirror, the current I5 flowing through the transistor Q2 will also rise, that is, the base-emitter voltage of the transistor Q2 rises, and the transistor Q2 The emitter voltage of Q2 remains unchanged due to grounding, so the base voltage VB of transistor Q2 will be raised to narrow the gap with VA.

可见,在负反馈控制环路中,检测节点V2的电压变化以及A、B节点电位误差,分别通过该环路中的晶体管MN2产生负反馈电压及电流镜的镜像作用,抑制电源电压变化和器件失配对电路造成负面的影响,提高了带隙电路的稳定性。It can be seen that in the negative feedback control loop, the voltage change of the detection node V2 and the potential error of the A and B nodes are detected, and the negative feedback voltage and the mirror effect of the current mirror are generated respectively through the transistor MN2 in the loop to suppress the power supply voltage change and the device The mismatch negatively impacts the circuit, improving the stability of the bandgap circuit.

综上所述,本发明的带隙基准电路不仅具有更低的功耗,而且具有更高的PSRR,同时在工艺、电压、温度变化时仍能稳定工作。To sum up, the bandgap reference circuit of the present invention not only has lower power consumption, but also has higher PSRR, and can still work stably when the process, voltage and temperature vary.

需要说明的是,上述实施例不以任何形式限制本发明,凡采用等同替换或等效变换的方式所获得的技术方案,均落在本发明的保护范围内。It should be noted that the above embodiments do not limit the present invention in any form, and all technical solutions obtained by means of equivalent replacement or equivalent transformation fall within the protection scope of the present invention.

Claims (4)

1.一种低功耗高PSRR的带隙基准电路,其特征在于,由无运放带隙核心电路、启动电路和负反馈控制环路组成,其中,1. A bandgap reference circuit with low power consumption and high PSRR is characterized in that it is made up of no operational amplifier bandgap core circuit, start-up circuit and negative feedback control loop, wherein, 无运放带隙核心电路:用于实现电路核心功能,产生所需的带隙基准参考电压;No operational amplifier bandgap core circuit: used to realize the core function of the circuit and generate the required bandgap reference voltage; 启动电路:用于完成带隙基准电路的启动,使带隙基准电路进入正常工作状态;Start-up circuit: used to complete the start-up of the bandgap reference circuit, so that the bandgap reference circuit enters a normal working state; 负反馈控制环路:用于控制、提高带隙基准电路的稳定性,消除运放的使用,减小功耗及芯片面积;Negative feedback control loop: used to control and improve the stability of the bandgap reference circuit, eliminate the use of operational amplifiers, reduce power consumption and chip area; 整个电路的工作过程是:电路上电,启动电路首先开始工作,开启无运放带隙核心电路,带隙基准电路产生参考电压,同时,负反馈控制环路抑制非理想因素对电路的恶性影响。The working process of the whole circuit is: the circuit is powered on, the start-up circuit starts to work first, the core circuit without op amp bandgap is turned on, the bandgap reference circuit generates a reference voltage, and at the same time, the negative feedback control loop suppresses the harmful influence of non-ideal factors on the circuit . 2.根据权利要求1所述的低功耗高PSRR的带隙基准电路,其特征在于,所述无运放带隙核心电路主要由晶体管Q3、晶体管Q4、电阻R1、电阻R2、电阻R3、电阻R4、电阻R5和电阻R6组成,所述晶体管为NPN型双极晶体管,所述电阻R6的阻值远远大于电阻R4及电阻R5,其中,2. The bandgap reference circuit of low power consumption and high PSRR according to claim 1, wherein the bandgap core circuit without an operational amplifier is mainly composed of transistor Q3, transistor Q4, resistor R1, resistor R2, resistor R3, Composed of resistor R4, resistor R5 and resistor R6, the transistor is an NPN type bipolar transistor, and the resistance value of the resistor R6 is much larger than that of the resistor R4 and the resistor R5, wherein, 晶体管Q3的发射极与地相连,晶体管Q3的基极与电阻R2的一端、电阻R4的一端相连,晶体管Q3的集电极与电阻R4的另一端、电阻R6的一端相连;The emitter of the transistor Q3 is connected to the ground, the base of the transistor Q3 is connected to one end of the resistor R2 and one end of the resistor R4, and the collector of the transistor Q3 is connected to the other end of the resistor R4 and one end of the resistor R6; 晶体管Q4的发射极与电阻R5的一端相连,电阻R5的另一端与地相连,晶体管Q4的基极与电阻R6的另一端相连,晶体管Q4的集电极与电阻R3的一端相连,电阻R3的另一端与电阻R2的另一端相连,二者的连接节点与电阻R1的一端相连;The emitter of the transistor Q4 is connected to one end of the resistor R5, the other end of the resistor R5 is connected to the ground, the base of the transistor Q4 is connected to the other end of the resistor R6, the collector of the transistor Q4 is connected to one end of the resistor R3, and the other end of the resistor R3 One end is connected to the other end of the resistor R2, and the connection node of the two is connected to one end of the resistor R1; 其中,晶体管Q3的基极为无运放带隙核心电路的第一钳位匹配端,其与负反馈控制环路的第一反馈检测输入端相连;晶体管Q4的集电极为无运放带隙核心电路的第二钳位匹配端,其与负反馈控制环路的第二反馈检测输入端相连;电阻R1的另一端为无运放带隙核心电路的输出端,其与带隙基准输出电压Vref相连。Among them, the base of transistor Q3 is the first clamp matching end of the core circuit without op amp bandgap, which is connected to the first feedback detection input end of the negative feedback control loop; the collector of transistor Q4 is the core circuit without op amp bandgap The second clamp matching end of the circuit is connected to the second feedback detection input end of the negative feedback control loop; the other end of the resistor R1 is the output end of the non-op-amp bandgap core circuit, which is connected to the bandgap reference output voltage V ref is connected. 3.根据权利要求2所述的低功耗高PSRR的带隙基准电路,其特征在于,所述启动电路主要由晶体管MP4、晶体管MP5、晶体管Q5、晶体管Q6、电阻R7、电阻R8和电阻R9组成,所述晶体管MP4、晶体管MP5为PMOS晶体管,所述晶体管Q5、晶体管Q6为NPN型双极晶体管,其中,3. The bandgap reference circuit of low power consumption and high PSRR according to claim 2, wherein the start-up circuit is mainly composed of transistor MP4, transistor MP5, transistor Q5, transistor Q6, resistor R7, resistor R8 and resistor R9 composition, the transistor MP4 and the transistor MP5 are PMOS transistors, and the transistor Q5 and the transistor Q6 are NPN bipolar transistors, wherein, 晶体管MP4的栅端与晶体管MP5的漏端、晶体管Q6的集电极相连,晶体管MP4的源端与电源电压相连,晶体管MP4的漏端与电阻R7的一端相连,电阻R7的另一端为启动电路的输出端,其与负反馈控制环路的启动输入端相连;The gate terminal of the transistor MP4 is connected with the drain terminal of the transistor MP5 and the collector of the transistor Q6, the source terminal of the transistor MP4 is connected with the power supply voltage, the drain terminal of the transistor MP4 is connected with one terminal of the resistor R7, and the other terminal of the resistor R7 is used for starting the circuit an output terminal connected to the start input terminal of the negative feedback control loop; 晶体管MP5的源端与电源电压相连,晶体管MP5的漏端与晶体管Q6的集电极相连,晶体管MP5的栅端为启动电路的开关端口,其与负反馈控制环路中晶体管MP2的栅端相连;The source terminal of the transistor MP5 is connected to the power supply voltage, the drain terminal of the transistor MP5 is connected to the collector of the transistor Q6, and the gate terminal of the transistor MP5 is a switch port of the starting circuit, which is connected to the gate terminal of the transistor MP2 in the negative feedback control loop; 晶体管Q6的基极与晶体管Q5的集电极相连,晶体管Q6的发射极与地相连;The base of the transistor Q6 is connected to the collector of the transistor Q5, and the emitter of the transistor Q6 is connected to the ground; 晶体管Q5的基极与电阻R8的一端、电阻R9的一端相连,晶体管Q5的集电极与电阻R8的另一端相连,晶体管Q5的发射极与地相连,电阻R9的另一端接电源电压。The base of the transistor Q5 is connected to one end of the resistor R8 and one end of the resistor R9, the collector of the transistor Q5 is connected to the other end of the resistor R8, the emitter of the transistor Q5 is connected to the ground, and the other end of the resistor R9 is connected to the power supply voltage. 4.根据权利要求3所述的低功耗高PSRR的带隙基准电路,其特征在于,所述负反馈控制环路主要由晶体管MP1、晶体管MP2、晶体管MP3、晶体管MN1、晶体管MN2、晶体管MN3、晶体管Q1、晶体管Q2、电阻R0和电阻R10组成,所述晶体管MP1、晶体管MP2、晶体管MP3为PMOS晶体管,所述晶体管MN1、晶体管MN2、晶体管MN3为NMOS晶体管,所述晶体管Q1、晶体管Q2为NPN型晶体管,其中,4. The bandgap reference circuit of low power consumption and high PSRR according to claim 3, wherein the negative feedback control loop is mainly composed of transistor MP1, transistor MP2, transistor MP3, transistor MN1, transistor MN2, transistor MN3 , transistor Q1, transistor Q2, resistor R0 and resistor R10, the transistor MP1, transistor MP2, and transistor MP3 are PMOS transistors, the transistor MN1, transistor MN2, and transistor MN3 are NMOS transistors, and the transistor Q1 and transistor Q2 are NPN type transistors, where, 晶体管MP1的栅端、晶体管MP2的栅端和晶体管MP3的栅端相连,晶体管MP1的源端、晶体管MP2的源端、晶体管MP3的源端与电源电压相连,晶体管MP1的漏端与晶体管MN1的源端、晶体管Q1的集电极相连,晶体管MP2的漏端与晶体管MP2的栅端、晶体管MN1的漏端相连,晶体管MP3的漏端与晶体管MN1的栅端、晶体管MN2的栅端、晶体管MN2的漏端、晶体管MN3的栅端相连;The gate terminal of the transistor MP1, the gate terminal of the transistor MP2 are connected to the gate terminal of the transistor MP3, the source terminal of the transistor MP1, the source terminal of the transistor MP2, and the source terminal of the transistor MP3 are connected to the power supply voltage, and the drain terminal of the transistor MP1 is connected to the transistor MN1 The source terminal is connected to the collector of the transistor Q1, the drain terminal of the transistor MP2 is connected to the gate terminal of the transistor MP2, and the drain terminal of the transistor MN1, and the drain terminal of the transistor MP3 is connected to the gate terminal of the transistor MN1, the gate terminal of the transistor MN2, and the gate terminal of the transistor MN2. The drain terminal is connected to the gate terminal of the transistor MN3; 晶体管MN1的栅端与晶体管MN2的栅端、晶体管MN2的漏端、晶体管MN3的栅端相连,晶体管MN2的漏端为负反馈控制环路的启动输入端,其与启动电路的输出端相连;The gate terminal of the transistor MN1 is connected to the gate terminal of the transistor MN2, the drain terminal of the transistor MN2, and the gate terminal of the transistor MN3, and the drain terminal of the transistor MN2 is the starting input terminal of the negative feedback control loop, which is connected to the output terminal of the starting circuit; 晶体管MN1的源端与晶体管Q1的集电极相连,晶体管MN2的源端与晶体管Q2的集电极相连,晶体管MN3的源端与带隙基准输出电压Vref相连,晶体管MN3的漏端与电阻R0的一端相连,电阻R0的另一端与电源电压相连;The source terminal of the transistor MN1 is connected to the collector of the transistor Q1, the source terminal of the transistor MN2 is connected to the collector of the transistor Q2, the source terminal of the transistor MN3 is connected to the bandgap reference output voltage Vref , the drain terminal of the transistor MN3 is connected to the resistor R0 One end is connected, and the other end of the resistor R0 is connected to the power supply voltage; 晶体管Q1的发射极与电阻R10的一端相连,电阻R10的另一端与地相连,晶体管Q1的基极为负反馈控制环路的第一反馈检测输入端,其与无运放带隙核心电路的第一钳位匹配端相连;The emitter of the transistor Q1 is connected to one end of the resistor R10, and the other end of the resistor R10 is connected to the ground. The base of the transistor Q1 is the first feedback detection input end of the negative feedback control loop, which is connected to the first end of the bandgap-free core circuit of the op amp. A clamp matching terminal is connected; 晶体管Q2的发射极与地相连,晶体管Q2的基极为负反馈控制环路的第二反馈检测输入端,其与无运放带隙核心电路的第二钳位匹配端相连。The emitter of the transistor Q2 is connected to the ground, and the base of the transistor Q2 is the second feedback detection input terminal of the negative feedback control loop, which is connected to the second clamp matching terminal of the non-op-amp bandgap core circuit.
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CN110865677A (en) * 2019-12-09 2020-03-06 北京集创北方科技股份有限公司 Reference source circuit, chip, power supply and electronic equipment
CN110865677B (en) * 2019-12-09 2022-04-19 北京集创北方科技股份有限公司 Reference source circuit, chip, power supply and electronic equipment
US12164318B2 (en) 2019-12-09 2024-12-10 Chipone Technology (Beijing) Co., Ltd. Reference source circuit, chip, power supply, and electronic apparatus
CN112416045A (en) * 2020-10-30 2021-02-26 广东美的白色家电技术创新中心有限公司 Band gap reference circuit and chip
CN112416045B (en) * 2020-10-30 2022-07-19 广东美的白色家电技术创新中心有限公司 Band gap reference circuit and chip
CN114706442A (en) * 2022-04-12 2022-07-05 中国电子科技集团公司第五十八研究所 Low-power-consumption band-gap reference circuit
CN114706442B (en) * 2022-04-12 2023-07-14 中国电子科技集团公司第五十八研究所 Low-power consumption band-gap reference circuit

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