CN105826215B - The forming method of semiconductor structure - Google Patents
The forming method of semiconductor structure Download PDFInfo
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- CN105826215B CN105826215B CN201510011859.7A CN201510011859A CN105826215B CN 105826215 B CN105826215 B CN 105826215B CN 201510011859 A CN201510011859 A CN 201510011859A CN 105826215 B CN105826215 B CN 105826215B
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Abstract
The present invention provides a kind of forming method of semiconductor structure, and the forming method includes：First wafer and the second wafer are provided, it is formed with MEMS structure in first wafer, it is formed with TSV structure in second wafer, therefore the wafer bonding structure that the first wafer and the second wafer are formed can be used in making MEMS TSV bonding structures, by immersing the wet etching in etching liquid, it synchronizes and thinning back side of silicon wafer is carried out to the first wafer and the second wafer, it is smaller to the damage of the first wafer and the second wafer, effectively increase the production efficiency of MEMS TSV bonding structures.Due to being sealed between the first wafer and the second wafer, etching liquid will not will not cause to damage from wafer bonding structure is entered between the first wafer and the second wafer, improve the quality of MEMS TSV bonding structures to wafer bonding structure.
Description
Technical field
The present invention relates to semiconductor applications, and in particular to a kind of forming method of semiconductor structure.
Background technology
With the development of semiconductor technology, MEMS (Micro-Electro-Mechanical System, MEMS)
As the research hotspot of current semiconductor technology.
MEMS usually has complicated multilayered structure, and multiple wafer bondings is needed to be formed together.Therefore,
MEMS-TSV bonding structures become the primary study object of current MEMS manufacturing technologies, for example, forming MEMS in the first wafer
Cavity structure and operating circuit form TSV (through-silicon via penetrate silicon interconnection) mutually connection in the second wafer
Structure forms the MEMS with complete function together by the first wafer and the second wafer bonding later.First wafer and
After second wafer bonding, it can also continue to by the second wafer and with the third wafer key of MEMS cavity structures and operating circuit
It is combined, the wafer bonding structure of the first, second, third wafer bonding together is formed, to form increasingly complex microcomputer
Electric system.
Referring to figs. 1 to Fig. 4, a kind of sectional view of MEMS-TSV bonding structures forming method of the prior art is shown.
With reference to figure 1, the first wafer 20 includes the first substrate 21,23 and of MEMS cavity structures on the first substrate 21
Operating circuit 22, the second wafer 10 include the second substrate 11, the interconnection structure 13 being located on the second substrate 11, the first wafer 20
It is linked together by wafer bonding component 30 with the second wafer 10, makes MEMS cavity structures 23, operating circuit 22 and mutually connection
Structure 13 is electrically connected.TSV structure 12 is formed in the second substrate 11, the TSV structure 12 is connected with interconnection structure 13, for for
Operating circuit 22 provides the input and output of electric signal.20 and second wafer 10 of such first wafer bonds together to form MEMS-TSV bondings
Structure, the MEMS-TSV bonding structures can be separated into multiple MEMS working cells.
With reference to figure 2, in the prior art, to make the MEMS working cell volume smaller to be formed, in the first wafer 20
After being bonded together with the second wafer 10, the first wafer 20 is carried out back thinning, that is, removes the substrate 21 of segment thickness.It is logical
It is carried out back thinning frequently with the first wafer of technique 20 of mechanical lapping, but mechanical lapping may damage substrate 21, Jin Erke
It can influence the performance of MEMS cavity structures 23 and operating circuit 22.
With reference to figure 3, Fig. 4, after the first wafer 20 is thinned, also dry etching is carried out to the second substrate 11, TSV is made to tie
Structure 12 exposes, and metal terminal 14 is formed in the TSV structure 12, and exposed portion metal terminal 14 is formed on metal terminal 14
Insulating layer 15.The metal terminal 14 provides the input and output of electric signal for interconnection structure 13 for being connected with external power supply.
But dry etching remove the second substrate 11 thickness it is larger, cost is higher, and can only to single-wafer operation,
Spend the time longer when batch production.Production efficiency is relatively low.
Invention content
Problems solved by the invention is to provide a kind of forming method of semiconductor structure, improves MEMS-TSV bonding structures
Production efficiency.
To solve the above problems, the present invention provides a kind of forming method of semiconductor structure, including：
First wafer and the second wafer are provided, are formed with MEMS structure in first wafer, shape in second wafer
At there is TSV structure；
Make first wafer together with second wafer bonding, forms wafer bonding structure；
Region between the first wafer and the second wafer is sealed processing；
The wafer bonding structure is immersed in etching liquid, wet etching is carried out to the wafer bonding structure, is synchronized pair
First wafer and the second wafer carry out thinning back side of silicon wafer.
Optionally, the etching liquid of the wet etching includes：TMAH solution.
Optionally, the operating circuit being connected with the MEMS structure, second wafer are formed in first wafer
On be formed with the interconnection structure being connected with the TSV structure；Make first wafer together with second wafer bonding, shape
In the step of wafer bonding structure, the operating circuit of first wafer is connected with the interconnection structure of second wafer.
Optionally, synchronizing the step of carrying out thinning back side of silicon wafer to the first wafer and the second wafer includes：Make the second wafer
In TSV structure expose.
Optionally, synchronizing the step of carrying out thinning back side of silicon wafer to the first wafer and the second wafer includes：Make the first wafer
Thickness reduce 200 to 400 microns.
Optionally, synchronizing the step of carrying out thinning back side of silicon wafer to the first wafer and the second wafer includes：Make the second wafer
Thickness reduce 200 to 400 microns.
It optionally, will be described after the step of region between the first wafer and the second wafer is sealed processing
Before wafer bonding structure immerses in etching liquid, the forming method further includes：Pre- be thinned is carried out to second wafer rear.
Optionally, carrying out pre- thinned step to second wafer rear includes：Using mechanical lapping, dry etching or
The method of person's wet etching carries out pre- be thinned to second wafer rear.
Optionally, after synchronizing to the first wafer and the second wafer progress thinning back side of silicon wafer, the forming method is also
Including：Second wafer rear is thinned again, the TSV structure in the second wafer is made to expose.
Optionally, the step of region between the first wafer and the second wafer is sealed processing include：In the first crystalline substance
Circle and the fringe region in the second wafer bonding face form sealing structure.
Optionally, include the step of the fringe region in the first wafer and the second wafer bonding face forms sealing structure：
First wafer and the fringe region in the second wafer bonding face are coated with colloidal materials, toast, make to the wafer bonding structure
The colloidal materials solidification, forms sealing structure.
Optionally, the colloidal materials are epoxy resin.
Compared with prior art, technical scheme of the present invention has the following advantages：
Be formed with MEMS structure in first wafer of the invention, be formed with TSV structure in the second wafer, thus the first wafer and
The wafer bonding structure that second wafer is formed can be used in making MEMS-TSV bonding structures, by immersing the wet method in etching liquid
Etching synchronizes and carries out thinning back side of silicon wafer to the first wafer and the second wafer, smaller to the damage of the first wafer and the second wafer,
Effectively increase the production efficiency of MEMS-TSV bonding structures.Due to the regional seal between the first wafer and the second wafer, carve
Erosion liquid will not enter wafer bonding structure between the first wafer and the second wafer, into without being constructed to MEMS-TSV bonding junctions
At damage, the quality of MEMS-TSV bonding structures is improved.
Description of the drawings
Fig. 1 to Fig. 4 is a kind of schematic diagram of MEMS-TSV bonding structures forming method of the prior art；
Fig. 5 to Fig. 9 be semiconductor structure of the present invention one embodiment of forming method in each step sectional view；
Figure 10 to Figure 11 be semiconductor structure of the present invention one embodiment of forming method in each step sectional view.
Specific implementation mode
As stated in the background art, in the manufacturing process of MEMS-TSV bonding structures, to make the working cell volume to be formed
The first wafer of technique pair of smaller, generally use mechanical lapping carries out thinning back side of silicon wafer, but mechanical lapping may damage lining
The first wafer of bottom, and then MEMS structure and the performance of operating circuit may be influenced.It, will also be to second after the first wafer is thinned
Wafer carries out dry etching, and TSV structure is made to expose, but the thickness that the second wafer is thinned in dry etching is larger, and cost is higher, and
And can only be to single-wafer operation, when batch production, spends the time longer, and production efficiency is relatively low.
In order to solve the above-mentioned technical problem, the present invention proposes that a kind of forming method of semiconductor structure, the present invention first are brilliant
It is formed with MEMS structure in circle, TSV structure, therefore the wafer key that the first wafer and the second wafer are formed are formed in the second wafer
It closes structure to can be used in making MEMS-TSV bonding structures, by immersing the wet etching in etching liquid, synchronize to the first wafer
Thinning back side of silicon wafer is carried out with the second wafer, it is smaller to the damage of the first wafer and the second wafer, effectively increase MEMS-TSV
The production efficiency of bonding structure.Due to the regional seal between the first wafer and the second wafer, etching liquid will not be from the first wafer
And second improve MEMS- between wafer into wafer bonding structure into without causing to damage to MEMS-TSV bonding structures
The quality of TSV bonding structures.
To make the above purposes, features and advantages of the invention more obvious and understandable, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
With reference to figure 5 to Fig. 9, the section view of each step of one embodiment of forming method of semiconductor structure of the present invention is shown
Figure.
With reference to figure 5, the first wafer 200 and the second wafer 100 are provided.
In the present embodiment, first wafer 200 includes the first substrate 201, and the second wafer 100 includes the second substrate
101, first substrate, 201 and second substrate 101 is silicon substrate, and in other embodiments, the substrate can also be germanium
Other semiconductor substrates such as silicon substrate or silicon-on-insulator substrate do not do any restrictions to this present invention.
In the present embodiment, first wafer, 200 and second wafer 100 is used to form MEMS-TSV bonding structures.It is described
First wafer 200 includes the first substrate 201, and the first medium layer 204 and second sequentially formed on the first substrate 201 is situated between
Matter layer 205 is formed with operating circuit 202 in first medium layer 204, and MEMS structure is formed in second dielectric layer 205
203。
Specifically, in the present embodiment, the material of the first medium layer 204 is silica, the second dielectric layer 205
Material be silicon.As shown in figure 5, the MEMS structure 203 is to include the structure of cavity in second dielectric layer 205.
Second wafer 100 includes the second substrate 101 and the third dielectric layer 110 formed on the second substrate 101,
It is formed with interconnection structure 103 in the third dielectric layer 110, TSV structure 102 is formed in second substrate 101, it is described
TSV structure 102 is connected with the interconnection structure 103, for the first wafer and the second wafer bonding together after, it is described
TSV structure 102 is the input and output that interconnection structure 103 provides electric signal.
In the present embodiment, the material of the third dielectric layer 110 is silica, and the material of the interconnection structure 103 is
The material of copper, the TSV structure 102 is copper, but the present invention is to third dielectric layer 110, interconnection structure 103, TSV structure 102
Material be not limited.In other embodiments, the interconnection structure 103 and the material of TSV structure 102 can also be aluminium.
In the present embodiment, the first metal gasket 301 is also formed on first wafer 200, on second wafer 100
It is also formed with the second metal gasket 302.First metal gasket, 301 and second metal gasket 302 is used for the first wafer 200 and second
Wafer 100 is bonded together.
It should be noted that in the present embodiment, the thickness H1 of first substrate 201 is 700 microns, second lining
The thickness H2 at bottom 101 is 700 microns, but the present invention does not limit the thickness of first substrate, 201 and second substrate 101
System, optionally, the thickness H1 of first substrate 201 can in the range of 600 to 800 microns, second substrate 101
Thickness H2 can be in the range of 600 to 800 microns.It should also be noted that, in the present embodiment, 102 end of the TSV structure
Portion is 600 microns with second substrate, 101 surface distance H3, i.e., described 102 end of TSV structure and second wafer
The distance at 100 back sides is 600 microns.
With continued reference to Fig. 5, first wafer 200 is bonded on the second wafer 100, forms wafer bonding structure.This
In embodiment, the wafer bonding structure is used to form MEMS-TSV bonding structures.
Specifically, in the present embodiment, brilliant by described first using first metal gasket, 301 and second metal gasket 302
Circle 200 and the second wafer 100 are bonded together.In the present embodiment, the material of first metal gasket, 301 and second metal gasket 302
Material is aluminium, and first metal gasket, 301 and second metal gasket 302 can be incorporated in one by the way that eutectic reaction occurs with germanium material
It rises.But the present invention is not limited the specific bonding technology of first wafer, 200 and second wafer 100, to the first metal
The material of pad 301 and the second metal gasket 302 is not also limited.
It should be noted that after the bonding of first wafer, 200 and second wafer 100, the first wafer 200 and second is brilliant
100 opposite surfaces of circle are bonding face.
With continued reference to Fig. 5, the region between the first wafer 200 and the second wafer 100 is sealed processing.
In the present embodiment, sealing structure 303 is formed in the fringe region of 100 bonding face of the first wafer 200 and the second wafer,
Make to seal between the first wafer 200 and the second wafer 100.
Specifically, in the present embodiment, it is coated with glue in the fringe region of 100 bonding face of the first wafer 200 and the second wafer
Body material toasts the wafer bonding structure, and the colloidal materials is made to cure, and forms sealing structure 303.It may be used
Syringe needle with colloid coating function, surrounds the wafer bonding structure one week, to first wafer, 200 and second wafer
The fringe region of 100 bonding faces is coated with colloidal materials.By first wafer 200 and second by the way of being coated with colloidal materials
Regional seal between wafer 100, operating method is simple and direct, and sealing effect is preferable, but the present invention is to by the first wafer and second
The specific method in the region between wafer is not limited.
It should be noted that in the present embodiment, the colloidal materials are epoxy resin.The solidification temperature of epoxy resin compared with
Low, the influence to wafer bonding structure is smaller, and leakproofness is strong, but the present invention to the specific materials of the colloidal materials not
It is limited.
With reference to figure 6, the wafer bonding structure is immersed in etching liquid, wet method quarter is carried out to the wafer bonding structure
Erosion synchronizes and carries out thinning back side of silicon wafer to the first wafer 200 and the second wafer 100.
Specifically, in the present embodiment, 200 back side of the first wafer is the first substrate 201 away from first medium layer 204
Surface, 100 back side of the second wafer are the surface that the second substrate 101 deviates from third dielectric layer 110.
It synchronizes the purpose for carrying out thinning back side of silicon wafer to the first wafer 200 and the second wafer 100 to be, makes wafer bonding knot
Structure is thinned, so that the MEMS-TSV structural volume smallers formed, and expose the TSV structure 102 in the second wafer 100, or
TSV structure 102 is set to be more nearly the back side of the second wafer 100.
In the present embodiment, the step of thinning back side of silicon wafer is carried out to the first wafer 200 and the second wafer 100 packet is synchronized
It includes：The first substrate 201 for removing segment thickness, removes the second substrate 101 of segment thickness, the TSV in the second wafer 100 is made to tie
102 end of structure is close to the back side of the second wafer 100.
It should be noted that in the present embodiment, due to the material identical of the first substrate 201 and the second substrate 101, etching liquid
The rate for removing the first substrate 201 and the second substrate 101 is also identical.Therefore, when the first substrate 201 and second lining for needing to remove
When the thickness at bottom 101 is identical, using the wet etching that the wafer bonding structure is immersed to etching liquid, a wet method can be passed through
Etching completes being thinned to the first wafer 200 and the second wafer 100, and 102 end of TSV structure is close in the second wafer 100
The back side of second wafer 100, effectively increases production efficiency.
By immersing the wet etching in etching liquid, wafer rear is carried out to the first wafer 200 and the second wafer 100 and is subtracted
It is thin, it is smaller to the damage of the first wafer 200 and the second wafer 100.The method for using mechanical lapping compared with the existing technology is thinned
First wafer, the present invention carry out thinning back side of silicon wafer using the first wafer of wet etching pair 200, it is not easy to the first wafer 200
In, semiconductor devices, circuit etc. in especially the first substrate 201 cause to damage, and then are conducive to what raising was subsequently formed
The quality of MEMS-TSV bonding structures.
Further, since the regional seal in the present embodiment between the first wafer 200 and the second wafer 100, etching liquid will not
Enter wafer bonding structure between the first wafer and the second wafer, into without to the first wafer 200 and the second wafer 100 it
Between the first metal gasket 301, the second metal gasket 302 and the MEMS structure 203 exposed or other semiconductor devices cause to damage, into
And improve the quality for the MEMS-TSV bonding structures being subsequently formed.
It should be noted that when the thickness difference of the first substrate 201 and the second substrate 101 that need to remove, pass through leaching
Enter the wet etching in etching liquid, the first wafer 200 of same thickness and the second wafer 100 of segment thickness can be removed, it is right
In the first wafer 200 or the second wafer 100 that need removal thickness bigger, the wet etching immersed in etching liquid can passed through
Before or after, individually remove the first wafer 200 or the second wafer 100 of segment thickness.
In the present embodiment, other semiconductor devices being connected with MEMS structure 203 are also formed in the first wafer 200,
Therefore it is 300 microns that 200 back side of the first wafer, which needs thinned thickness, that is, it is 300 micro- to need 201 thickness of the first substrate removed
Rice.Since 102 end of the TSV structure and second substrate, 101 surface distance H3 are 600 microns, it is therefore desirable to remove
101 thickness of the second substrate be 600 microns, with expose the second wafer 100 in 102 end of TSV structure.
Therefore, in the present embodiment, by immersing the wet etching in etching liquid, synchronize to the first wafer 200 and second
Wafer 100 carries out thinning back side of silicon wafer, the first substrate 201 and 300 microns thick of the second substrate of 300 microns thick of removal
101, so that the thickness H1 of the first substrate 201 is reduced to 400 microns, the thickness H1 of the second substrate 101 is also reduced to 400 microns.By
Before synchronizing and carrying out thinning back side of silicon wafer to the first wafer 200 and the second wafer 100,102 end of the TSV structure and institute
The distance H3 for stating 101 surface of the second substrate is 600 microns, and the second substrate 101 of 300 microns thick of removal can be such that the TSV ties
102 end of structure is close to the second wafer rear.
The wet etching in etching liquid, the thickness H1 of the first substrate 201 and the second substrate 101 are immersed in through this embodiment
Thickness H2 be reduced 300 microns simultaneously, and the wet etching step immersed in etching liquid can be to multiple wafers
Bonding structure operation simultaneously, effectively increases the rate of thinned wafer bonding structure, also improves and exposes the TSV structure 102
The rate of end, and then improve the production efficiency of MEMS-TSV bonding structures.
It should be noted that the present invention carries out thinning back side of silicon wafer to synchronizing to the first wafer 200 and the second wafer 100
In step, the thickness that the first wafer 200 and the second wafer 100 is thinned is not limited, optionally, wet in etching liquid by immersing
Method etches, and the thickness that the first wafer 200 and the second wafer 100 is thinned can also be at 200 to 400 microns.
It should also be noted that, in the present embodiment, immersed in etching liquid by the wafer bonding structure, to the wafer
Bonding structure carried out in the step of wet etching, and used etching liquid is TMAH (tetramethylammonium hydroxide) solution, and TMAH is molten
Liquid is preferable to the first substrate 201 and 101 etching effect of the second substrate of silicon materials, in the first wafer 200 and the second wafer 100
Other semiconductor devices cannot be easily caused damage.But the present invention is not limited the etching liquid that the wet etching uses.
With reference to figure 7, after the wet etching step in the immersion etching liquid, to 100 back side of the second wafer into
Row is thinned again, and the TSV structure 102 in the second wafer 100 is made to expose.
Specifically, dry etching is carried out to second substrate 101 in the present embodiment, continues to remove the second of segment thickness
Substrate 101 makes 102 end of the TSV structure expose.
In the etching process of the dry etching, etching apparatus adsorbs the first wafer 200, makes etching gas individually to institute
The second substrate 101 stated on the second wafer 100 performs etching, therefore dry etching will not impact the first substrate 201.It is dry
Influence of the method etching to TSV structure 102 is smaller, and after dry etching exposes 102 end of TSV structure, the TSV knots
Structure 102 can partly protrude from 101 surface of the second substrate, be conducive to be formed after insulating layer subsequently on the second substrate 101, described
TSV structure 102 is easy to expose insulating layer.
But after the present invention is to the wet etching step in the immersion etching liquid, continue to remove the of segment thickness
The specific method of two substrates 101 is not limited, and in other embodiments, can also use the side of mechanical lapping or wet etching
Method continues to remove the second substrate 101 of segment thickness.For example, diamond lap head may be used to 101 table of the second substrate
Face carries out mechanical lapping, and the rate that mechanical lapping removes the second substrate 101 is very fast.It should be noted that mechanical lapping here
Or the method for wet etching, it is after adsorbing first wafer 200, individually to handle the second wafer 100, to avoid
It is damaged to the first wafer 200.
With reference to figure 8, exposes 102 end of TSV structure in dry etching, make the TSV structure 102 that can partly protrude from
After second substrate, 101 surface, insulating layer 104 is formed on second substrate 101, the insulating layer 104 exposes TSV structure
102 ends.
Specifically, insulation material layer (not shown) can be covered on second substrate 101 and the TSV structure 102,
The insulation material layer on 102 end of the TSV structure, remaining insulation material layer are removed by dry etching or wet etching
The insulating layer 104 is formed, the insulating layer 104 exposes 102 end of TSV structure.
The metal terminal and the second substrate 102 that the insulating layer 104 is used to make to be subsequently formed insulate.In the present embodiment,
The material of the insulating layer 104 is silica.
With reference to figure 9, metal terminal 105 is formed in the TSV structure 102, exposed portion is formed on metal terminal 105
The protective layer 106 of metal terminal 105.The metal terminal 105 provides electricity for being connected with external power supply, for interconnection structure 103
The input and output of signal.
The forming method of the protective layer 106 includes that photoresist material is coated in the TSV structure 102 and insulating layer 104
Material continues exposure imaging, the photoresist on removal part metals terminal 105, remaining photoresist to the photoresist
The protective layer 106 is formed, there is the opening of exposed portion metal terminal 105 in the protective layer 106.
Form MEMS-TSV bonding structures in this way, the quality of the MEMS-TSV bonding structures that the present embodiment is formed compared with
It is good, and production efficiency is higher.The MEMS-TSV bonding structures can pass through the techniques such as cutting encapsulation and form MEMS
Working cell.
With reference to figures 10 to Figure 11, the schematic diagram of another embodiment of the forming method of semiconductor structure of the present invention is shown.This
The step of another embodiment of forming method of invention semiconductor structure is with above-described embodiment is roughly the same, same as the previously described embodiments
The step of details are not described herein, place unlike the embodiments above is：
Referring to FIG. 10, after being sealed between the first wafer 200 and the second wafer frontside edge region, by the wafer
Before bonding structure immerses in etching liquid, pre- be thinned is carried out to 100 back side of the second wafer.In the present embodiment, to described
Second wafer, 100 back side carries out the second substrate 101 that pre- thinned step removes segment thickness.
In the present embodiment, the thickness of the second substrate 101 of removal is 300 microns, in the second substrate of removal segment thickness
After 101, the thickness H2 of second substrate 101 is reduced to 400 microns.
In the present embodiment, it is that mechanical lapping specifically can that 100 back side of the second wafer, which carries out pre- thinned method,
To carry out mechanical lapping to 101 surface of the second substrate using diamond lap head, mechanical lapping removes the second substrate 101
Rate is very fast.But the present invention carries out pre- thinned specific method to 100 back side of the second wafer not to be limited, in other realities
It applies in example, the second substrate 101 of dry etching or wet etching removal segment thickness can also be used.It should be noted that
Here the method for dry etching or wet etching is after adsorbing first wafer 200, individually to second wafer
The progress of 100 back sides is pre- to be thinned, to avoid the first wafer 200 is damaged to.
The wafer bonding structure is immersed and is carved after 100 back side of the second wafer carries out pre- be thinned with reference to figure 11
Lose in liquid, wet etching carried out to the wafer bonding structure, remove segment thickness the first wafer 200 and segment thickness the
Two wafers 100 make 102 end of TSV structure in the second wafer 100 expose the second wafer 100 backwards to 200 direction of the first wafer
Surface.
In the present embodiment, the wafer bonding structure is immersed in etching liquid, the wafer bonding structure is carried out wet
Method etches, and the thickness for removing the first substrate 201 and the second substrate 101 is 300 microns, after the wet etching, described the
The thickness of one substrate 201 is reduced to 400 microns, and the TSV structure 102 exposes the surface of the second substrate 101.
In the present embodiment, the second substrate 101 of the method removal segment thickness of mechanical lapping is first used, the second substrate is removed
101 rate is very fast.It is immersed in etching liquid by circle bonding structure again, wet etching is carried out to the wafer bonding structure, together
When remove segment thickness the first substrate 201 and the second substrate 101.Wet etching can be by mechanical lapping in the second substrate 101
The roughened finish of upper formation removes so that the insulating layer and metal terminal pattern subsequently formed on 101 surface of the second substrate is more preferable.
Above is only a specific embodiment of the present invention, in order to those skilled in the art be made to be better understood from this
The spirit of invention, however protection scope of the present invention is not specifically described as restriction range, Ren Heben with the specific embodiment
The technical staff in field without departing from the spirit of the scope of the invention, can make an amendment specific embodiments of the present invention, without
It is detached from protection scope of the present invention.
Claims (10)
1. a kind of forming method of semiconductor structure, which is characterized in that including：
First wafer and the second wafer are provided, MEMS structure is formed in first wafer, is formed in second wafer
TSV structure；
Make first wafer together with second wafer bonding, forms wafer bonding structure；
Region between the first wafer and the second wafer is sealed processing；
The wafer bonding structure is immersed in etching liquid, wet etching is carried out to the wafer bonding structure, is synchronized to first
Wafer and the second wafer carry out thinning back side of silicon wafer；
Described the step of being sealed processing includes：Fringe region in the first wafer and the second wafer bonding face is coated with colloid material
Material, toasts the wafer bonding structure, and the colloidal materials is made to cure, and forms sealing structure.
2. forming method as described in claim 1, which is characterized in that the etching liquid of the wet etching includes：TMAH solution.
3. forming method as described in claim 1, which is characterized in that be formed in first wafer and the MEMS structure
Connected operating circuit is formed with the interconnection structure being connected with the TSV structure on second wafer；Make first wafer
Together with second wafer bonding, formed wafer bonding structure the step of in, the operating circuit of first wafer and institute
The interconnection structure for stating the second wafer is connected.
4. forming method as described in claim 1, which is characterized in that synchronize and carry out the wafer back of the body to the first wafer and the second wafer
The thinned step in face includes：The TSV structure in the second wafer is set to expose.
5. forming method as described in claim 1, which is characterized in that synchronize and carry out the wafer back of the body to the first wafer and the second wafer
The thinned step in face includes：The thickness of the first wafer is set to reduce 200 to 400 microns.
6. forming method as described in claim 1, which is characterized in that synchronize and carry out the wafer back of the body to the first wafer and the second wafer
The thinned step in face includes：The thickness of the second wafer is set to reduce 200 to 400 microns.
7. forming method as described in claim 1, which is characterized in that the region between the first wafer and the second wafer into
After the step of row encapsulation process, before the wafer bonding structure is immersed in etching liquid, the forming method further includes：It is right
Second wafer rear carries out pre- be thinned.
8. forming method as claimed in claim 7, which is characterized in that carry out pre- thinned step to second wafer rear
Including：Using the method for mechanical lapping, dry etching or wet etching, pre- be thinned is carried out to second wafer rear.
9. forming method as described in claim 1, which is characterized in that carry out wafer to the first wafer and the second wafer synchronizing
After thinning back side, the forming method further includes：Second wafer rear is thinned again, is made in the second wafer
TSV structure is exposed.
10. forming method as described in claim 1, which is characterized in that the colloidal materials are epoxy resin.
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| US8022433B2 (en) * | 2006-09-06 | 2011-09-20 | Hitachi Metals, Ltd. | Semiconductor sensor device and method for manufacturing same |
| CN103818874A (en) * | 2014-02-12 | 2014-05-28 | 北京时代民芯科技有限公司 | Novel packaging method of MEMS (Micro-electromechanical Systems) structure and processing circuit integrated system |
| CN103832964A (en) * | 2012-11-20 | 2014-06-04 | 苏州敏芯微电子技术有限公司 | Micro-electro-mechanical system device manufacturing method |
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| US8022433B2 (en) * | 2006-09-06 | 2011-09-20 | Hitachi Metals, Ltd. | Semiconductor sensor device and method for manufacturing same |
| CN101434374A (en) * | 2008-12-23 | 2009-05-20 | 中国科学院上海微系统与信息技术研究所 | Structure and implementing method of MEMS device disc grade chip size hermetic package |
| CN103832964A (en) * | 2012-11-20 | 2014-06-04 | 苏州敏芯微电子技术有限公司 | Micro-electro-mechanical system device manufacturing method |
| CN104016298A (en) * | 2013-03-01 | 2014-09-03 | 台湾积体电路制造股份有限公司 | MEMS structures and methods of forming the same |
| CN103818874A (en) * | 2014-02-12 | 2014-05-28 | 北京时代民芯科技有限公司 | Novel packaging method of MEMS (Micro-electromechanical Systems) structure and processing circuit integrated system |
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