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CN105812685A - Pixel array and method for improving light response uniformity of pixel array - Google Patents

Pixel array and method for improving light response uniformity of pixel array Download PDF

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CN105812685A
CN105812685A CN201410844157.2A CN201410844157A CN105812685A CN 105812685 A CN105812685 A CN 105812685A CN 201410844157 A CN201410844157 A CN 201410844157A CN 105812685 A CN105812685 A CN 105812685A
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area
distance
pixel
photosensitive area
pixel array
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赵立新
陈家诚
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Galaxycore Shanghai Ltd Corp
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Abstract

一种像素阵列和提高像素阵列的光响应均匀性的方法。其中,所述像素阵列包括阵列分布的多个像素,所述像素阵列还包括:到镜头光轴所在直线的距离小于等于第一距离的第一区域;到镜头光轴所在直线的距离大于第一距离的第二区域;位于所述第一区域内的每个像素具有第一感光面积;位于所述第二区域内的每个像素具有第二感光面积;所述第二感光面积大于所述第一感光面积。所述像素阵列能够避免因固有余弦四次方曝光规律导致的光响应差异问题,提高像素阵列不同区域内像素光响应的均匀性。

A pixel array and a method for improving the photoresponse uniformity of the pixel array. Wherein, the pixel array includes a plurality of pixels distributed in an array, and the pixel array also includes: a first area whose distance to the straight line where the optical axis of the lens is located is less than or equal to the first distance; a distance to the straight line where the optical axis of the lens is located is greater than the first The second area of the distance; each pixel located in the first area has a first photosensitive area; each pixel located in the second area has a second photosensitive area; the second photosensitive area is larger than the first photosensitive area A photosensitive area. The pixel array can avoid the problem of photoresponse difference caused by the inherent cosine fourth power exposure rule, and improve the uniformity of pixel photoresponse in different regions of the pixel array.

Description

像素阵列和提高像素阵列的光响应均匀性的方法Pixel array and method for improving photoresponse uniformity of pixel array

技术领域technical field

本发明涉及半导体制造领域,尤其涉及一种像素阵列和提高像素阵列的光响应均匀性的方法。The invention relates to the field of semiconductor manufacturing, in particular to a pixel array and a method for improving the photoresponse uniformity of the pixel array.

背景技术Background technique

图像传感器是一种将光学信息(opticalinformation)转换为电信号的装置。图像传感器可以被进一步地分为两种不同的类型:互补金属氧化物半导体(CMOS)图像传感器和电荷耦合器件(CCD)图像传感器。其中CMOS图像传感器具有结构简单、体积小和应用方便等优点,具有广泛的用途。An image sensor is a device that converts optical information into electrical signals. Image sensors can be further divided into two different types: Complementary Metal Oxide Semiconductor (CMOS) image sensors and Charge Coupled Device (CCD) image sensors. Among them, the CMOS image sensor has the advantages of simple structure, small size and convenient application, and has a wide range of uses.

对图像传感器来说,通过镜头到达传感器的光强在像面光轴上以及周边不同,其中像面四周的明亮度,称为周边光量,以相对与中心亮度百分比来表示,为相对照度(RelativeIllumination)曲线。周边光量因受到镜头余弦四次方定律及渐晕现象的影响,与中心部相比,明亮度必然减少。导致传感器周围出现暗角等现象。即与镜头光轴平行的入射光,聚集在画面中心部分成像,假设它的照度为I0,则与光轴不平行的斜光线,与光轴成任意角θ入射,这时的像面照度为Iθ,则有下列关系:For an image sensor, the light intensity reaching the sensor through the lens is different on the optical axis of the image plane and its surroundings. The brightness around the image plane is called the peripheral light amount, which is expressed as a percentage of the relative brightness to the center, and is the Relative Illumination (RelativeIllumination) )curve. The amount of peripheral light is affected by the fourth power law of cosine of the lens and the vignetting phenomenon, so the brightness will inevitably decrease compared with the central part. Causes phenomena such as vignetting around the sensor. That is, the incident light parallel to the optical axis of the lens gathers in the center of the screen to form an image. Assuming its illuminance is I 0 , then the oblique light that is not parallel to the optical axis is incident at an arbitrary angle θ with the optical axis, and the image surface illuminance at this time is I θ , then there is the following relationship:

Iθ=I0cos4θI θ = I 0 cos 4 θ

相应的相对照度曲线如图1所示。斜光线成像的亮度与这个斜角的余弦四次方成正比。因此与画面中心部分相比,越向边缘,影像越暗。特别是用广角镜头或大口径镜头,受边缘减光的影响更大。The corresponding relative illuminance curve is shown in Figure 1. The brightness of an oblique ray image is proportional to the fourth power of the cosine of this oblique angle. Therefore, compared with the center part of the frame, the image will be darker towards the edge. Especially with a wide-angle lens or a large aperture lens, it is more affected by edge light reduction.

由于上述余弦四次方曝光规律,导致现有像素阵列中不同区域的像素存在光响应差异问题。Due to the above cosine fourth power exposure law, there is a problem of light response difference between pixels in different regions in the existing pixel array.

为消减余弦四次方以及渐晕现象作用导致的传感器出现暗角等问题,通过缩小光圈可以消除渐晕现象。In order to reduce the vignetting of the sensor caused by cosine fourth power and vignetting, the vignetting phenomenon can be eliminated by reducing the aperture.

如图2所示,现有方法通常通过设计复杂的镜头组合200,从而提升开口效率,以防止到达像素阵列100周边的光量较少,从而达到消减余弦四次方曝光规律导致的光响应差异的目的。图2中的点划线所在直线即为镜头光轴所在直线,而镜头光轴经过像素阵列100的位置为像素阵列100的中点101。As shown in FIG. 2 , the existing method usually designs a complex lens combination 200 to increase the aperture efficiency, so as to prevent the light amount reaching the periphery of the pixel array 100 from being less, so as to reduce the light response difference caused by the cosine fourth power exposure rule. Purpose. The straight line where the dotted line in FIG. 2 is located is the straight line where the optical axis of the lens is located, and the position where the optical axis of the lens passes through the pixel array 100 is the midpoint 101 of the pixel array 100 .

另一种现有方法是在像素上方增加一层掩膜层,通过不同的开口尺寸来控制到达像素上的进光量来改变每个像素的响应。然而,这种方法增加了工艺的复杂性。Another existing method is to add a mask layer above the pixels, and control the amount of light entering the pixels through different opening sizes to change the response of each pixel. However, this method increases the complexity of the process.

但是,上述两种方法都无法避免固有余弦四次方曝光规律导致的光响应差异问题。However, neither of the above two methods can avoid the problem of photoresponse differences caused by the inherent cosine fourth power exposure rule.

发明内容Contents of the invention

本发明解决的问题是提供一种像素阵列及提高像素阵列的光响应均匀性的方法,以解决不同区域的像素光响应差异问题。The problem to be solved by the present invention is to provide a pixel array and a method for improving the uniformity of photoresponse of the pixel array, so as to solve the problem of difference in photoresponse of pixels in different regions.

为解决上述问题,本发明提供一种像素阵列,所述像素阵列包括阵列分布的多个像素,所述像素阵列包括:In order to solve the above problems, the present invention provides a pixel array, the pixel array includes a plurality of pixels distributed in an array, and the pixel array includes:

到镜头光轴所在直线的距离小于等于第一距离的第一区域;The first area whose distance to the straight line where the optical axis of the lens is located is less than or equal to the first distance;

到镜头光轴所在直线的距离大于第一距离的第二区域;The second area whose distance to the straight line where the optical axis of the lens is located is greater than the first distance;

位于所述第一区域内的每个像素具有第一感光面积;Each pixel located in the first area has a first photosensitive area;

位于所述第二区域内的每个像素具有第二感光面积;Each pixel located in the second area has a second photosensitive area;

所述第二感光面积大于所述第一感光面积。The second photosensitive area is larger than the first photosensitive area.

可选的,所述像素阵列的最小边长为2.84mm以上,所述第一距离的大小范围为1.29mm~1.42mm。Optionally, the minimum side length of the pixel array is more than 2.84 mm, and the first distance ranges from 1.29 mm to 1.42 mm.

可选的,所述第一感光面积的大小范围为0.589μm2~0.711μm2,所述第二感光面积为所述第一感光面积的1.8倍~2.0倍。Optionally, the size range of the first photosensitive area is 0.589 μm 2 to 0.711 μm 2 , and the second photosensitive area is 1.8 times to 2.0 times that of the first photosensitive area.

可选的,所述第二区域到镜头光轴所在直线的距离小于等于第二距离,所述像素阵列还包括:Optionally, the distance from the second area to the straight line where the optical axis of the lens is located is less than or equal to the second distance, and the pixel array further includes:

到镜头光轴所在直线的距离大于第二距离的第三区域;The third area whose distance to the straight line where the optical axis of the lens is located is greater than the second distance;

位于所述第三区域内的每个像素具有第三感光面积;Each pixel located in the third area has a third photosensitive area;

所述第三感光面积大于所述第二感光面积。The third photosensitive area is larger than the second photosensitive area.

可选的,所述像素阵列的最小边长为2.84mm以上,所述第一距离为0.91mm~1.00mm,所述第二距离为1.29mm~1.42mm。Optionally, the minimum side length of the pixel array is more than 2.84mm, the first distance is 0.91mm-1.00mm, and the second distance is 1.29mm-1.42mm.

可选的,所述第一感光面积的大小范围为0.589μm2~0.711μm2,所述第二感光面积为所述第一感光面积的1.6倍~1.7倍,所述第三感光面积为所述第二感光面积的1.8倍~2.0倍。Optionally, the size range of the first photosensitive area is 0.589 μm 2 to 0.711 μm 2 , the second photosensitive area is 1.6 to 1.7 times the first photosensitive area, and the third photosensitive area is the 1.8 to 2.0 times the second photosensitive area.

可选的,所述第三区域到镜头光轴所在直线的距离小于等于第三距离,所述像素阵列还包括:Optionally, the distance from the third area to the straight line where the optical axis of the lens is located is less than or equal to the third distance, and the pixel array further includes:

到镜头光轴所在直线的距离大于第三距离的第四区域;The fourth area whose distance to the straight line where the optical axis of the lens is located is greater than the third distance;

位于所述第四区域内的每个像素具有第四感光面积;Each pixel located in the fourth area has a fourth photosensitive area;

所述第四感光面积大于所述第三感光面积。The fourth photosensitive area is larger than the third photosensitive area.

可选的,所述第四区域到镜头光轴所在直线的距离小于等于第四距离,所述像素阵列还包括:Optionally, the distance between the fourth area and the straight line where the optical axis of the lens is located is less than or equal to the fourth distance, and the pixel array further includes:

到镜头光轴所在直线的距离大于第四距离的第五区域;The fifth area whose distance to the straight line where the optical axis of the lens is located is greater than the fourth distance;

位于所述第五区域内的每个像素具有第五感光面积;Each pixel located in the fifth area has a fifth photosensitive area;

所述第五感光面积大于所述第四感光面积。The fifth photosensitive area is larger than the fourth photosensitive area.

为解决上述问题,本发明还提供了一种提高像素阵列的光响应均匀性的方法,包括:In order to solve the above problems, the present invention also provides a method for improving the photoresponse uniformity of the pixel array, including:

提供像素阵列,所述像素阵列包括阵列排布的多个像素;providing a pixel array comprising a plurality of pixels arranged in an array;

设置所述像素阵列中到镜头光轴所在直线的距离小于等于第一距离的区域为第一区域;Setting the area in the pixel array whose distance to the straight line where the optical axis of the lens is located is less than or equal to the first distance as the first area;

设置所述像素阵列中到镜头光轴所在直线的距离大于第一距离的区域为第二区域;Setting the area in the pixel array whose distance to the straight line where the optical axis of the lens is located is greater than the first distance as the second area;

设置所述第一区域内的每个像素具有第一感光面积;setting each pixel in the first area to have a first photosensitive area;

设置所述第二区域内的每个像素具有第二感光面积;setting each pixel in the second area to have a second photosensitive area;

设置所述第二感光面积大于所述第一感光面积,以减小所述第一区域内的像素和所述第二区域内的像素之间的光响应差异。The second photosensitive area is set to be larger than the first photosensitive area to reduce the photoresponse difference between the pixels in the first area and the pixels in the second area.

可选的,所述方法还包括:Optionally, the method also includes:

设置所述第二区域到镜头光轴所在直线的距离小于等于第二距离;Setting the distance from the second area to the straight line where the optical axis of the lens is located is less than or equal to the second distance;

设置所述像素阵列中到镜头光轴所在直线的距离大于第二距离的区域为第三区域;Setting the area in the pixel array whose distance to the straight line where the optical axis of the lens is located is greater than the second distance as the third area;

设置所述第三区域内的每个像素具有第三感光面积;setting each pixel in the third area to have a third photosensitive area;

设置所述第三感光面积大于所述第二感光面积,以减小所述第二区域内的像素和所述第三区域内的像素之间的光响应差异。The third light-sensing area is set larger than the second light-sensing area to reduce the light response difference between the pixels in the second area and the pixels in the third area.

与现有技术相比,本发明的技术方案具有以下优点:Compared with the prior art, the technical solution of the present invention has the following advantages:

本发明的技术方案中,像素阵列分为第一区域和第二区域,并且第一区域内的像素到镜头光轴所在直线的距离小于等于第一距离。像素阵列中的其它像素位于第二区域中。位于第一区域内的每个像素具有第一感光面积,位于第二区域内的每个像素具有第二感光面积,并且第二感光面积大于第一感光面积。通过设置第二感光面积大于第一感光面积,能够调整第一区域内的像素与第二区域内的像素的感光差异,从而避免因固有余弦四次方曝光规律导致的光响应差异问题,从而提高像素阵列不同区域内像素光响应的均匀性。In the technical solution of the present invention, the pixel array is divided into a first area and a second area, and the distance between the pixels in the first area and the straight line where the optical axis of the lens is located is less than or equal to the first distance. Other pixels in the pixel array are located in the second area. Each pixel located in the first area has a first photosensitive area, each pixel located in the second area has a second photosensitive area, and the second photosensitive area is larger than the first photosensitive area. By setting the second photosensitive area larger than the first photosensitive area, the photosensitive difference between the pixels in the first area and the pixels in the second area can be adjusted, thereby avoiding the problem of photoresponse differences caused by the inherent cosine fourth power exposure law, thereby improving The uniformity of the photoresponse of pixels in different regions of the pixel array.

进一步,所述第二感光面积控制在所述第一感光面积的1.8倍~2.0倍。根据余弦四次方曲线计算得到,第一距离处与像素阵列中心处的光量比大约为(1/1.8)~(1/2.0),再根据此光量比的关系,控制第二感光面积约为第一感光面积1.8~2.0倍,从而保证第二区域内的第二像素能够达到与第一区域内的第一像素大体相当的光响应灵敏度。Further, the second photosensitive area is controlled at 1.8 to 2.0 times of the first photosensitive area. Calculated according to the cosine quadratic curve, the ratio of the light intensity at the first distance to the center of the pixel array is about (1/1.8)~(1/2.0), and then according to the relationship of the light intensity ratio, the second photosensitive area is controlled to be about The first light-sensing area is 1.8-2.0 times, so as to ensure that the second pixel in the second area can achieve the photoresponse sensitivity roughly equivalent to that of the first pixel in the first area.

附图说明Description of drawings

图1是余弦四次方曝光规律影响下的相对照度曲线;Figure 1 is the relative illuminance curve under the influence of cosine fourth power exposure rule;

图2是现有像素阵列和镜头组合的结构示意图;Fig. 2 is a structural schematic diagram of an existing pixel array and lens combination;

图3是本发明实施例所提供的像素阵列示意图;Fig. 3 is a schematic diagram of a pixel array provided by an embodiment of the present invention;

图4是本发明另一实施例所提供的像素阵列示意图;FIG. 4 is a schematic diagram of a pixel array provided by another embodiment of the present invention;

图5是图4所示像素阵列的剖面示意图;5 is a schematic cross-sectional view of the pixel array shown in FIG. 4;

图6是现有像素阵列不同区域的像素对应的曝光时间-灰度值曲线;6 is an exposure time-gray value curve corresponding to pixels in different regions of the existing pixel array;

图7是图4所示像素阵列不同区域的像素对应的曝光时间-灰度值曲线。FIG. 7 is an exposure time-gray value curve corresponding to pixels in different regions of the pixel array shown in FIG. 4 .

具体实施方式detailed description

为解决上述光响应差异问题,本发明提供了一种新的像素阵列,通常设计使得不同区域内的像素具有不同感光面积,并且越靠近镜头光轴所在直线的区域,像素的感光面积越小,越远离镜头光轴所在直线的区域,像素的感光面积越大。像素的感光面积越大,在同样的光照条件和曝光时间内能够接收到的光子数量越多,相应地产生的电荷数量越多,补偿了由于余弦四次方曝光规律导致远离镜头光轴的周边区域光量减小的影响,从而使得不同像素区域的像素具有大体相同的感光灵敏度,避免因固有余弦四次方曝光规律导致的光响应差异问题,提高像素阵列不同区域内像素光响应的均匀性。In order to solve the above-mentioned problem of photoresponse difference, the present invention provides a new pixel array, which is usually designed so that pixels in different regions have different photosensitive areas, and the closer to the area where the optical axis of the lens is located, the smaller the photosensitive area of the pixel. The farther away from the straight line where the optical axis of the lens is located, the larger the photosensitive area of the pixel. The larger the photosensitive area of a pixel, the more photons it can receive under the same lighting conditions and exposure time, and the correspondingly more charges will be generated, which compensates for the surrounding area far away from the optical axis of the lens due to the cosine fourth power exposure law. The influence of the reduction of the amount of light in the area, so that the pixels in different pixel areas have roughly the same photosensitivity, avoid the problem of light response differences caused by the inherent cosine fourth power exposure rule, and improve the uniformity of pixel light response in different areas of the pixel array.

为使本发明的上述目的、特征和优点能够更为明显易懂,下面结合附图对本发明的具体实施例做详细的说明。In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

本发明实施例提供一种像素阵列300,请参考图3。An embodiment of the present invention provides a pixel array 300 , please refer to FIG. 3 .

所述像素阵列300包括阵列分布的多个像素(未全部示出),所述像素阵列300包括到镜头光轴所在直线的距离小于等于第一距离D31的第一区域Z31,以及到镜头光轴所在直线的距离大于第一距离D31的第二区域Z32。第一区域Z31内的像素为第一像素P31,图3中显示其中一个第一像素P31为例。第二区域Z32内的像素为第二像素P32,图3中显示其中一个第二像素P32为例。全部第一像素P31和第二像素P32即为上述像素阵列300所包括的多个像素。其中,位于第一区域Z31内的每个像素具有第一感光面积,即第一像素P31具有第一感光面积。位于所述第二区域Z32内的每个像素具有第二感光面积,即第二像素P32具有第二感光面积。并且,所述第二感光面积大于所述第一感光面积。The pixel array 300 includes a plurality of pixels (not all shown) distributed in an array, the pixel array 300 includes a first zone Z31 whose distance to the straight line where the optical axis of the lens is located is less than or equal to the first distance D31, and a distance to the optical axis of the lens The second zone Z32 where the distance of the straight line is greater than the first distance D31. The pixels in the first zone Z31 are first pixels P31, and one of the first pixels P31 is shown in FIG. 3 as an example. The pixels in the second area Z32 are the second pixels P32, and one of the second pixels P32 is shown in FIG. 3 as an example. All the first pixels P31 and the second pixels P32 are the plurality of pixels included in the above-mentioned pixel array 300 . Wherein, each pixel located in the first zone Z31 has a first photosensitive area, that is, the first pixel P31 has a first photosensitive area. Each pixel located in the second zone Z32 has a second photosensitive area, that is, the second pixel P32 has a second photosensitive area. Moreover, the second photosensitive area is larger than the first photosensitive area.

本实施例中,所述像素阵列300的平面形状可以为矩形,像素阵列300具有一个矩形中心301。此矩形中心301亦为镜头光轴所在直线经过像素阵列300的位置(可参考图2)。In this embodiment, the planar shape of the pixel array 300 may be a rectangle, and the pixel array 300 has a rectangular center 301 . The rectangle center 301 is also the position where the line where the optical axis of the lens is located passes through the pixel array 300 (refer to FIG. 2 ).

本实施例中,矩形像素阵列300的最小边长(最小边长即矩形相互平行的两条短边的边长)可以为2.84mm以上,从而保证整个像素阵列300的像素个数值较高(例如5M以上)。例如具体的,像素阵列300的最小边长可以为2.84mm。In this embodiment, the minimum side length of the rectangular pixel array 300 (the minimum side length is the length of the two short sides of the rectangle parallel to each other) can be more than 2.84mm, so as to ensure that the number of pixels in the entire pixel array 300 is high (for example 5M or more). For example, specifically, the minimum side length of the pixel array 300 may be 2.84 mm.

本实施例中,考虑到矩形像素阵列300的最小边长可以为2.84mm以上,则所述第一距离D31的大小范围可以为1.29mm~1.42mm,即全部第一像素P31到矩形中心301的距离均小于1.29mm,或者均小于1.42mm,例如具体可以为1.42mm。由于第一距离D31恰好为像素阵列300短边边长的一半,因此,此时第一区域Z31恰好为以矩形中心301为圆心的内切圆。而在其它实施例中,第一区域Z31的直径可以小于1.42mm,相应的,此时第一区域Z31为以矩形中心301为圆心的圆形区域,所述圆形区域位于矩形像素阵列300内。In this embodiment, considering that the minimum side length of the rectangular pixel array 300 can be more than 2.84 mm, the size range of the first distance D31 can be 1.29 mm to 1.42 mm, that is, the distance from all the first pixels P31 to the center of the rectangle 301 The distances are all less than 1.29mm, or both are less than 1.42mm, for example, can be specifically 1.42mm. Since the first distance D31 is exactly half the length of the short side of the pixel array 300 , the first zone Z31 is just an inscribed circle with the center of the rectangle 301 as the center. In other embodiments, the diameter of the first zone Z31 may be less than 1.42mm. Correspondingly, at this time, the first zone Z31 is a circular area with the center of the rectangle 301 as the center, and the circular area is located in the rectangular pixel array 300. .

本实施例中,所述第一感光面积的大小范围可以为0.589μm2~0.711μm2。位于第一区域Z31内的像素接受到的光照照度较强,因此,当第一区域Z31的半径为1.29mm~1.42mm时(即第一距离D31的大小为1.29mm~1.42mm时),所述第一感光面积可以较小,即选择在0.589μm2~0.711μm2,从而即保证第一像素P31具有足够的光响应灵敏度,又能够防止第一像素P31与第二像素P32的光响应差异增大。In this embodiment, the size range of the first photosensitive area may be 0.589 μm 2 to 0.711 μm 2 . Pixels located in the first zone Z31 receive relatively strong illuminance. Therefore, when the radius of the first zone Z31 is 1.29mm˜1.42mm (that is, when the size of the first distance D31 is 1.29mm˜1.42mm), the The above-mentioned first photosensitive area can be relatively small, that is, it can be selected from 0.589 μm 2 to 0.711 μm 2 , so as to ensure that the first pixel P31 has sufficient photoresponse sensitivity, and to prevent the photoresponse difference between the first pixel P31 and the second pixel P32 increase.

本实施例中,所述第二感光面积控制在所述第一感光面积的1.8倍~2.0倍。根据图2所示余弦四次方曲线计算得到,第一距离D31处与中心301处的光量比大约为(1/1.8)~(1/2.0),再根据此光量比的关系,控制第二感光面积约为第一感光面积1.8~2.0倍,从而保证第二区域Z32内的第二像素P32能够达到与第一区域Z31内的第一像素P31大体相当的光响应灵敏度。In this embodiment, the second photosensitive area is controlled to be 1.8 to 2.0 times the first photosensitive area. Calculated according to the cosine quadratic curve shown in Figure 2, the light quantity ratio between the first distance D31 and the center 301 is about (1/1.8)~(1/2.0), and then according to the relationship between the light quantity ratio, control the second The light-sensing area is approximately 1.8-2.0 times the first light-sensing area, so as to ensure that the second pixel P32 in the second zone Z32 can achieve a photoresponse sensitivity roughly equivalent to that of the first pixel P31 in the first zone Z31.

本实施例所提供的像素阵列300中,像素阵列300分为第一区域Z31和第二区域Z32,并且第一区域Z31内的像素到镜头光轴所在直线的距离小于等于第一距离D31,此部分像素为第一像素P31。像素阵列300中的其它像素位于第二区域Z32中,此部分像素为第二像素P32。并且,第一像素P31具有第一感光面积,第二像素P32具有第二感光面积,而第二感光面积大于第一感光面积。通过设置第二感光面积大于第一感光面积,能够调整第二像素P32和第一像素P31的感光差异,从而避免因固有余弦四次方曝光规律导致的光响应差异问题,提高像素阵列不同区域内像素光响应的均匀性。In the pixel array 300 provided in this embodiment, the pixel array 300 is divided into a first zone Z31 and a second zone Z32, and the distance between the pixels in the first zone Z31 and the straight line where the optical axis of the lens is located is less than or equal to the first distance D31. Some of the pixels are the first pixels P31. Other pixels in the pixel array 300 are located in the second region Z32, and this part of pixels is the second pixel P32. Moreover, the first pixel P31 has a first light-sensing area, the second pixel P32 has a second light-sensing area, and the second light-sensing area is larger than the first light-sensing area. By setting the second photosensitive area larger than the first photosensitive area, the photosensitive difference between the second pixel P32 and the first pixel P31 can be adjusted, thereby avoiding the problem of photoresponse differences caused by the inherent cosine fourth power exposure law, and improving the pixel array in different areas. Uniformity of pixel light response.

本发明另一实施例提供另外一种像素阵列400,请参考图4。Another embodiment of the present invention provides another pixel array 400 , please refer to FIG. 4 .

所述像素阵列400包括阵列分布的多个像素(未全部示出),所述像素阵列400包括到镜头光轴所在直线的距离小于等于第一距离D41的第一区域Z41,以及到镜头光轴所在直线的距离大于第一距离D41的第二区域Z42,并且像素阵列400的第二区域Z42到镜头光轴所在直线的距离小于等于第二距离D42。第一区域Z41内的像素为第一像素P41,图4中显示其中一个第一像素P41为例。第二区域Z42内的像素为第二像素P42,图4中显示其中一个第二像素P42为例。其中,位于第一区域Z41内的每个像素具有第一感光面积,即第一像素P41具有第一感光面积。位于所述第二区域Z42内的每个像素具有第二感光面积,即第二像素P42具有第二感光面积。并且,所述第二感光面积大于所述第一感光面积。The pixel array 400 includes a plurality of pixels (not all shown) distributed in an array, the pixel array 400 includes a first zone Z41 whose distance to the straight line where the optical axis of the lens is located is less than or equal to the first distance D41, and a distance to the optical axis of the lens The second zone Z42 where the distance of the straight line is greater than the first distance D41, and the distance from the second zone Z42 of the pixel array 400 to the straight line where the optical axis of the lens is located is less than or equal to the second distance D42. The pixels in the first zone Z41 are first pixels P41, and one of the first pixels P41 is shown in FIG. 4 as an example. The pixels in the second area Z42 are the second pixels P42, and one of the second pixels P42 is shown in FIG. 4 as an example. Wherein, each pixel located in the first zone Z41 has a first photosensitive area, that is, the first pixel P41 has a first photosensitive area. Each pixel located in the second zone Z42 has a second photosensitive area, that is, the second pixel P42 has a second photosensitive area. Moreover, the second photosensitive area is larger than the first photosensitive area.

请继续参考图4,与前述实施例不同的是,本实施例中,所述像素阵列400还包括到镜头光轴所在直线的距离大于第二距离D42的第三区域Z43。第三区域Z43内的像素为第三像素P43,图4中显示其中一个第三像素P43为例。位于第三区域Z43内的每个像素具有第三感光面积,即第三像素P43具有第三感光面积,并且,所述第三感光面积大于所述第二感光面积。全部第一像素P41、第二像素P42和第三像素P43即为上述像素阵列400所包括的多个像素。Please continue to refer to FIG. 4 , different from the foregoing embodiments, in this embodiment, the pixel array 400 further includes a third region Z43 whose distance to the line where the optical axis of the lens is located is greater than the second distance D42 . The pixels in the third area Z43 are third pixels P43, and one of the third pixels P43 is shown in FIG. 4 as an example. Each pixel located in the third zone Z43 has a third photosensitive area, that is, the third pixel P43 has a third photosensitive area, and the third photosensitive area is larger than the second photosensitive area. All of the first pixel P41 , the second pixel P42 and the third pixel P43 are the plurality of pixels included in the above pixel array 400 .

请参考图5,示出了像素阵列400的剖面示意图。在剖面结构中,镜头光轴所在直线为图5所示点划线所在直线。结合图4和图5可知,第一距离D41为第一区域Z41边缘到镜头光轴所在直线的距离,第二距离D42为第二区域Z42外边缘到镜头光轴所在直线的距离。Please refer to FIG. 5 , which shows a schematic cross-sectional view of the pixel array 400 . In the cross-sectional structure, the straight line where the optical axis of the lens is located is the straight line where the dotted line shown in FIG. 5 is located. 4 and 5, the first distance D41 is the distance from the edge of the first zone Z41 to the straight line where the optical axis of the lens is located, and the second distance D42 is the distance from the outer edge of the second zone Z42 to the straight line where the optical axis of the lens is located.

本实施例中,所述像素阵列400的平面形状同样可以为矩形,像素阵列400具有一个矩形中心401。此矩形中心401亦为镜头光轴所在直线经过像素阵列400的位置(可结合参考图2和图5)。In this embodiment, the planar shape of the pixel array 400 may also be a rectangle, and the pixel array 400 has a center 401 of a rectangle. The rectangle center 401 is also the position where the line where the optical axis of the lens is located passes through the pixel array 400 (refer to FIG. 2 and FIG. 5 in combination).

本实施例中,矩形像素阵列400的最小边长(最小边长即矩形相互平行的两条短边的边长)可以为2.84mm以上,从而保证整个像素阵列400的像素个数值较高(例如5M以上)。例如具体的,像素阵列400的最小边长可以为2.84mm。In this embodiment, the minimum side length of the rectangular pixel array 400 (the minimum side length is the length of the two short sides of the rectangle parallel to each other) can be more than 2.84mm, so as to ensure that the number of pixels in the entire pixel array 400 is relatively high (for example 5M or more). For example, specifically, the minimum side length of the pixel array 400 may be 2.84mm.

本实施例中,考虑到矩形像素阵列400的最小边长可以为2.84mm以上,则所述第一距离D41的大小范围可以为0.91mm~1.00mm,即全部第一像素P41到矩形中心401的距离均小于0.91mm,或者均小于1.00mm,例如具体可以为1.00mm。第一区域Z41为以矩形中心401为圆心的圆形区域,所述圆形区域位于矩形像素阵列400内。In this embodiment, considering that the minimum side length of the rectangular pixel array 400 can be more than 2.84 mm, the size range of the first distance D41 can be 0.91 mm to 1.00 mm, that is, the distance from all the first pixels P41 to the center of the rectangle 401 The distances are all less than 0.91 mm, or both are less than 1.00 mm, for example, can be specifically 1.00 mm. The first area Z41 is a circular area centered on the rectangular center 401 , and the circular area is located in the rectangular pixel array 400 .

本实施例中,第二距离为1.29mm~1.42mm,即全部第二像素P42到矩形中心401的距离均大于第一距离D41,并且小于或者等于1.29mm~1.42mm。第二区域Z42为以矩形中心401为圆心的圆环形区域,所述圆环形区域同样位于矩形像素阵列400内。In this embodiment, the second distance is 1.29mm˜1.42mm, that is, the distances from all the second pixels P42 to the center of the rectangle 401 are larger than the first distance D41 and less than or equal to 1.29mm˜1.42mm. The second area Z42 is an annular area centered on the rectangular center 401 , and the annular area is also located in the rectangular pixel array 400 .

在本发明的其它实施例中,也可以进一步设置第一区域Z41的面积等于第二区域Z42的面积,则此时,第二距离D2等于1.414倍的第一距离D1。In other embodiments of the present invention, it is also possible to further set the area of the first zone Z41 to be equal to the area of the second zone Z42, then at this time, the second distance D2 is equal to 1.414 times the first distance D1.

本实施例中,所述第一感光面积的大小范围可以为0.589μm2~0.711μm2。位于第一区域Z41内的像素接受到的光照照度较强,因此,当第一区域Z41的半径为0.91mm~1.00mm时(即第一距离D41的大小为0.91mm~1.00mm时),所述第一感光面积可以较小,即选择在0.589μm2~0.711μm2,从而即保证第一像素P41具有足够的光响应灵敏度,又能够防止第一像素P41与第二像素P42的光响应差异增大。In this embodiment, the size range of the first photosensitive area may be 0.589 μm 2 to 0.711 μm 2 . Pixels located in the first zone Z41 receive relatively strong illuminance. Therefore, when the radius of the first zone Z41 is 0.91mm˜1.00mm (that is, when the size of the first distance D41 is 0.91mm˜1.00mm), the The above-mentioned first photosensitive area can be relatively small, that is, it can be selected from 0.589 μm 2 to 0.711 μm 2 , so as to ensure that the first pixel P41 has sufficient photoresponse sensitivity, and to prevent the photoresponse difference between the first pixel P41 and the second pixel P42 increase.

本实施例中,所述第二感光面积控制在所述第一感光面积的1.6倍~1.7倍。根据图2所示余弦四次方曲线计算得到,第一距离D41处与中心401处的光量比大约为(1/1.6)~(1/1.7),再根据此光量比的关系,控制第二感光面积约为第一感光面积1.6~1.7倍,从而保证第二区域Z42内的第二像素P42能够达到与第一区域Z41内的第一像素P41大体相当的光响应灵敏度。In this embodiment, the second photosensitive area is controlled to be 1.6 to 1.7 times the first photosensitive area. Calculated according to the cosine quadratic curve shown in Figure 2, the light quantity ratio between the first distance D41 and the center 401 is about (1/1.6) to (1/1.7), and then according to the light quantity ratio relationship, control the second The light-sensing area is about 1.6-1.7 times the first light-sensing area, so as to ensure that the second pixel P42 in the second zone Z42 can achieve a photoresponse sensitivity roughly equivalent to that of the first pixel P41 in the first zone Z41.

本实施例中,所述第三感光面积为所述第二感光面积的1.8倍~2.0倍。由于像素阵列400中,第三区域Z43是除了第一区域Z41和第二区域Z42以外的其它区域,因此第三区域Z43位于整个像素阵列400的边角位置。根据图2所示余弦四次方曲线计算得到,第二距离D42处与第一距离D41处的光量比大约为(1/1.8)~(1/2.0),再根据此光量比的关系,控制第三感光面积约为第二感光面积1.8~2.0倍,从而保证第三区域Z43内的第三像素P43能够达到与第二区域Z42内的第二像素P42大体相当的光响应灵敏度。In this embodiment, the third photosensitive area is 1.8 to 2.0 times the second photosensitive area. Since in the pixel array 400 , the third area Z43 is an area other than the first area Z41 and the second area Z42 , the third area Z43 is located at a corner of the entire pixel array 400 . Calculated according to the cosine quadratic curve shown in Figure 2, the light quantity ratio at the second distance D42 and the first distance D41 is about (1/1.8) to (1/2.0), and then according to the relationship between the light quantity ratio, control The third light-sensing area is approximately 1.8-2.0 times the second light-sensing area, so as to ensure that the third pixel P43 in the third zone Z43 can achieve a photoresponse sensitivity roughly equivalent to that of the second pixel P42 in the second zone Z42.

需要说明的是,在本发明的其它实施例中,当像素阵列的总面积调整时,也可以以像素阵列最小边长的三分之一作为第一距离,以像素阵列最小边长的三分之二作为第二距离,并以此将像素阵列划分成为第一区域、第二区域和第三区域三个部分。It should be noted that, in other embodiments of the present invention, when the total area of the pixel array is adjusted, one-third of the minimum side length of the pixel array can also be used as the first distance, and one-third of the minimum side length of the pixel array can also be used as the first distance. The second distance is used as the second distance, and the pixel array is divided into three parts: the first area, the second area and the third area.

需要说明的是,在设置了上述各区域中各像素的感光面积之后,还可以调整镜头(未示出)到像素阵列的距离,从而使整个像素阵列达到更好的感光效果。It should be noted that, after setting the photosensitive area of each pixel in each of the above areas, the distance from the lens (not shown) to the pixel array can be adjusted, so that the entire pixel array can achieve a better photosensitive effect.

本实施例中,可以通过控制整个像素的面积来达到控制像素中感光面积的目的。具体的,由于一个像素中,感光区域面积占整个像素面积的比例较为固定,当增加整个像素的面积时,相应地就能够增加此像素的感光面积。In this embodiment, the purpose of controlling the photosensitive area in the pixel can be achieved by controlling the area of the entire pixel. Specifically, since the ratio of the area of the photosensitive area to the area of the entire pixel is relatively fixed in a pixel, when the area of the entire pixel is increased, the photosensitive area of the pixel can be correspondingly increased.

本实施例所提供的像素阵列400中,像素阵列400分为第一区域Z41、第二区域Z42和第三区域Z43,第一区域Z41内的像素到镜头光轴所在直线的距离小于等于第一距离D41,位于第一区域D41内的像素为第一像素P41,第二区域Z42内的像素到镜头光轴所在直线的距离大于第一距离D41且小于等于第二距离D42,位于第二区域D42内的像素为第二像素P42,第三区域Z43内的像素到镜头光轴所在直线的距离大于第二距离D42,位于第三区域D43内的像素为第三像素P43。并且,第一像素P41具有第一感光面积,第二像素P42具有第二感光面积,第三像素P43具有第三感光面积。而第二感光面积大于第一感光面积,第三感光面积大于第二感光面积。通过设置第二感光面积大于第一感光面积,并设置第三感光面积大于第二感光面积,能够调整第三像素P43、第二像素P42和第一像素P41的感光差异,从而避免因固有余弦四次方曝光规律导致的光响应差异问题,提高像素阵列不同区域内像素光响应的均匀性。In the pixel array 400 provided in this embodiment, the pixel array 400 is divided into a first zone Z41, a second zone Z42, and a third zone Z43, and the distance between the pixels in the first zone Z41 and the straight line where the optical axis of the lens is located is less than or equal to the first Distance D41, the pixels located in the first area D41 are the first pixels P41, the distance between the pixels in the second area Z42 and the line where the optical axis of the lens is located is greater than the first distance D41 and less than or equal to the second distance D42, and they are located in the second area D42 The pixels in the third area Z43 are the second pixels P42, the distance between the pixels in the third area Z43 and the line where the optical axis of the lens is located is greater than the second distance D42, and the pixels in the third area D43 are the third pixels P43. Moreover, the first pixel P41 has a first photosensitive area, the second pixel P42 has a second photosensitive area, and the third pixel P43 has a third photosensitive area. The second photosensitive area is larger than the first photosensitive area, and the third photosensitive area is larger than the second photosensitive area. By setting the second photosensitive area larger than the first photosensitive area, and setting the third photosensitive area larger than the second photosensitive area, it is possible to adjust the photosensitivity difference between the third pixel P43, the second pixel P42 and the first pixel P41, thereby avoiding the inherent cosine four The problem of photoresponse difference caused by the power exposure law improves the uniformity of pixel photoresponse in different regions of the pixel array.

图6示出了现有像素阵列不同区域的像素的曝光时间-灰度值曲线。其中,特别采用本实施例的划分方法对现有像素阵列进行划分,以划分出第一区域、第二区域和第三区域,此时不同区域中的像素感光面积是相同的。并选择各区域中位于中间位置的一个像素为代表,制作相应的曲线。三个区域中间位置的像素对应的灰度值与曝光时间曲线分别如图中的L1、L2和L3所示:三条曲线均包括斜线部分和横线部分,斜线部分表示灰度值随着曝光时间的增加而增加,而横线部分代表像素已经到达饱和曝光量。从图6中可以看到,由于余弦四次方曝光规律,在达到饱和曝光量之前,三条曲线斜线部分的斜率不同,其中,L1的斜线斜率明显大于L3的斜线斜率,也就是说,在现有像素阵列中所有像素感光面积相同的情况下,靠近镜头光轴的第一区域的光响应明显高于远离镜头光轴的第三区域的光响应,因此,现有像素阵列中的像素之间存在较为严重的光响应差异问题。FIG. 6 shows exposure time-gray value curves of pixels in different regions of a conventional pixel array. Wherein, the division method of this embodiment is used to divide the existing pixel array to divide into the first area, the second area and the third area. At this time, the photosensitive areas of the pixels in different areas are the same. And select a pixel in the middle of each area as a representative, and make a corresponding curve. The gray value and exposure time curves corresponding to the pixels in the middle of the three areas are shown as L1, L2 and L3 in the figure respectively: the three curves include oblique lines and horizontal lines, and the oblique parts indicate that the gray value increases with time. The exposure time increases, and the horizontal line represents that the pixel has reached the saturation exposure. It can be seen from Figure 6 that due to the cosine fourth power exposure law, before reaching the saturation exposure, the slopes of the slopes of the three curves are different. Among them, the slope of the slope of L1 is obviously greater than the slope of the slope of L3, that is to say , in the case of the same photosensitive area of all pixels in the existing pixel array, the photoresponse of the first area close to the optical axis of the lens is significantly higher than the photoresponse of the third area far away from the optical axis of the lens, therefore, the photoresponse of the existing pixel array There is a more serious problem of photoresponse differences between pixels.

而图7示出了本实施例所提供的像素阵列400中,第一像素P41、第二像素P42和第三像素P43的曝光时间-灰度值曲线。从中可以看到,由于本实施例设置第一像素P41、第二像素P42和第三像素P43具有不同的感光面积,并且是第二感光面积大于第一感光面积,第三感光面积大于第二感光面积。像素的感光面积越大,在同样的光照条件和曝光时间内能够接收到的光子数量越多,相应地产生的电荷数量越多,补偿了由于余弦四次方曝光规律导致远离镜头光轴的周边区域光量减小的影响,从而使得不同像素区域的像素具有大体相同的感光灵敏度,因此三条折线L41、L42和L43基本完全重合。因此,第一像素P41、第二像素P42和第三像素P43基本不存在光响应差异问题,即,像素阵列间不同区域内的像素光响应均匀性高。FIG. 7 shows the exposure time-gray value curves of the first pixel P41 , the second pixel P42 and the third pixel P43 in the pixel array 400 provided by this embodiment. It can be seen from the above that since the first pixel P41, the second pixel P42, and the third pixel P43 are set to have different light-sensing areas in this embodiment, and the second light-sensing area is larger than the first light-sensing area, the third light-sensing area is larger than the second light-sensing area area. The larger the photosensitive area of a pixel, the more photons it can receive under the same lighting conditions and exposure time, and the correspondingly more charges will be generated, which compensates for the surrounding area far away from the optical axis of the lens due to the cosine fourth power exposure law. Due to the influence of the reduction of the light quantity in the area, the pixels in different pixel areas have substantially the same photosensitivity, so the three broken lines L41 , L42 and L43 basically overlap completely. Therefore, the first pixel P41 , the second pixel P42 and the third pixel P43 basically do not have the problem of photoresponse difference, that is, the photoresponse uniformity of pixels in different regions among the pixel arrays is high.

需要说明的是,在本发明的其它实施例中,也可以将像素阵列分为四个区域。其中,到镜头光轴所在直线的距离小于等于第一距离的第一区域。到镜头光轴所在直线的距离大于第一距离的第二区域。所述第二区域到镜头光轴所在直线的距离小于等于第二距离。到镜头光轴所在直线的距离大于第二距离的第三区域。所述第三区域到镜头光轴所在直线的距离小于等于第三距离。到镜头光轴所在直线的距离大于第三距离的第四区域。位于所述第一区域内的每个像素具有第一感光面积。位于所述第二区域内的每个像素具有第二感光面积。位于所述第三区域内的每个像素具有第三感光面积。位于所述第四区域内的每个像素具有第四感光面积。所述第二感光面积大于所述第一感光面积。所述第三感光面积大于所述第二感光面积。所述第四感光面积大于所述第三感光面积。It should be noted that, in other embodiments of the present invention, the pixel array may also be divided into four regions. Wherein, the first area whose distance to the straight line where the optical axis of the lens is located is less than or equal to the first distance. A second area whose distance to the straight line where the optical axis of the lens is located is greater than the first distance. The distance from the second area to the straight line where the optical axis of the lens is located is less than or equal to the second distance. A third area whose distance to the straight line where the optical axis of the lens is located is greater than the second distance. The distance from the third area to the straight line where the optical axis of the lens is located is less than or equal to the third distance. The fourth area whose distance to the straight line where the optical axis of the lens is located is greater than the third distance. Each pixel located in the first area has a first photosensitive area. Each pixel located in the second area has a second photosensitive area. Each pixel located in the third area has a third photosensitive area. Each pixel located in the fourth area has a fourth photosensitive area. The second photosensitive area is larger than the first photosensitive area. The third photosensitive area is larger than the second photosensitive area. The fourth photosensitive area is larger than the third photosensitive area.

需要说明的是,在本发明的其它实施例中,也可以将像素阵列分为五个区域。即除了上述第四区域之外,还可以包括第五区域。此时,所述第四区域到镜头光轴所在直线的距离小于等于第四距离。而第五区域到镜头光轴所在直线的距离大于第四距离。It should be noted that, in other embodiments of the present invention, the pixel array may also be divided into five regions. That is, in addition to the above-mentioned fourth region, a fifth region may also be included. At this time, the distance from the fourth area to the straight line where the optical axis of the lens is located is less than or equal to the fourth distance. And the distance from the fifth area to the straight line where the optical axis of the lens is located is greater than the fourth distance.

需要说明的是,在本发明的其它实施例中,也可以将像素阵列分为六个以上的区域。本发明对此不作限定。It should be noted that, in other embodiments of the present invention, the pixel array may also be divided into more than six regions. The present invention is not limited thereto.

本发明实施例还提供了一种提高像素阵列的光响应均匀性的方法。The embodiment of the present invention also provides a method for improving the photoresponse uniformity of the pixel array.

所述方法首先提供像素阵列,所述像素阵列包括阵列排布的多个像素。所述像素阵列可以参考图3所示的像素阵列300,也可以参考图4中的像素阵列400。The method first provides a pixel array including a plurality of pixels arranged in an array. The pixel array may refer to the pixel array 300 shown in FIG. 3 or the pixel array 400 shown in FIG. 4 .

所述方法继续设置所述像素阵列中到镜头光轴所在直线的距离小于等于第一距离的区域为第一区域。The method continues to set an area in the pixel array whose distance to the line where the optical axis of the lens is located is less than or equal to a first distance as the first area.

设置所述像素阵列中到镜头光轴所在直线的距离大于第一距离的区域为第二区域。An area in the pixel array whose distance to the straight line where the optical axis of the lens is located is greater than the first distance is set as the second area.

设置所述第一区域内的每个像素具有第一感光面积。具体可以通过调整第一区域内像素的整体面积以调整第一感光面积的大小。Each pixel in the first area is set to have a first photosensitive area. Specifically, the size of the first photosensitive area can be adjusted by adjusting the overall area of the pixels in the first region.

设置所述第二区域内的每个像素具有第二感光面积。具体可以通过调整第二区域内像素的整体面积以调整第二感光面积的大小。Each pixel in the second area is set to have a second photosensitive area. Specifically, the size of the second photosensitive area can be adjusted by adjusting the overall area of the pixels in the second area.

设置所述第二感光面积大于所述第一感光面积,以减小所述第一区域内的像素和所述第二区域内的像素之间的光响应差异,,从而提高像素阵列不同区域内像素光响应的均匀性。Setting the second photosensitive area to be larger than the first photosensitive area to reduce the photoresponse difference between the pixels in the first area and the pixels in the second area, thereby improving the Uniformity of pixel light response.

由于设置所述第二感光面积大于所述第一感光面积,根据本说明书前述各实施例可知,像素阵列内不同区域内的像素光响应差异问题能够得到较好的解决。Since the second light-sensing area is set larger than the first light-sensing area, according to the foregoing embodiments of the present specification, it can be known that the problem of differences in pixel light responses in different regions within the pixel array can be better resolved.

需要说明的是,在本发明的其它实施例中,所述方法也可以继续设置所述第二区域到镜头光轴所在直线的距离小于等于第二距离。设置所述像素阵列中到镜头光轴所在直线的距离大于第二距离的区域为第三区域。设置所述第三区域内的每个像素具有第三感光面积。设置所述第三感光面积大于所述第二感光面积,以减小所述第二区域内的像素和所述第三区域内的像素之间的光响应差异,提高像素阵列不同区域内像素光响应的均匀性。It should be noted that, in other embodiments of the present invention, the method may continue to set the distance from the second region to the straight line where the optical axis of the lens is located to be less than or equal to the second distance. A region in the pixel array whose distance to the straight line where the optical axis of the lens is located is greater than the second distance is set as the third region. Each pixel in the third area is set to have a third photosensitive area. The third photosensitive area is set to be larger than the second photosensitive area, so as to reduce the photoresponse difference between the pixels in the second area and the pixels in the third area, and improve the pixel light in different areas of the pixel array. uniformity of response.

需要说明的是,在本发明的其它实施例中,所述方法也可以提供一种像素阵列,所述像素阵列包括阵列排布的多个像素。然后设置所述像素阵列具有N个区域。其中,设置第n区域到镜头光轴所在直线的距离小于等于第n距离,第(n+1)区域到镜头光轴所在直线的距离大于第n距离且小于等于第(n+1)距离。设置所述第n区域内的每个像素具有第n感光面积。设置所述第(n+1)区域内的每个像素具有第(n+1)感光面积。并设置所述第(n+1)感光面积大于所述第n感光面积,以减小所述第n区域内的像素和所述第(n+1)区域内的像素之间的光响应差异。其中,N为大于等于4的自然数,n为1至(N-1)的自然数。It should be noted that, in other embodiments of the present invention, the method may also provide a pixel array, and the pixel array includes a plurality of pixels arranged in an array. Then set the pixel array to have N areas. Wherein, the distance from the nth area to the straight line where the optical axis of the lens is located is set to be less than or equal to the nth distance, and the distance from the (n+1)th area to the straight line where the lens optical axis is located is greater than the nth distance and less than or equal to the (n+1)th distance. Each pixel in the nth area is set to have an nth photosensitive area. Each pixel in the (n+1)th area is set to have an (n+1)th photosensitive area. And setting the (n+1) photosensitive area to be larger than the n photosensitive area, so as to reduce the photoresponse difference between the pixels in the nth region and the pixels in the (n+1)th region . Wherein, N is a natural number greater than or equal to 4, and n is a natural number from 1 to (N−1).

虽然本发明披露如上,但本发明并非限定于此。任何本领域技术人员,在不脱离本发明的精神和范围内,均可作各种更动与修改,因此本发明的保护范围应当以权利要求所限定的范围为准。Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, so the protection scope of the present invention should be based on the scope defined in the claims.

Claims (10)

1. a pel array, described pel array includes multiple pixels of array distribution, it is characterised in that described pel array includes:
To the distance of camera lens optical axis place straight line less than or equal to the first area of the first distance;
To the distance of camera lens optical axis place straight line more than the second area of the first distance;
The each pixel being positioned at described first area has the first photosensitive area;
The each pixel being positioned at described second area has the second photosensitive area;
Described second photosensitive area is more than described first photosensitive area.
2. pel array as claimed in claim 1, it is characterised in that the minimum length of side of described pel array is more than 2.84mm, and the magnitude range of described first distance is 1.29mm~1.42mm.
3. pel array as claimed in claim 2, it is characterised in that the magnitude range of described first photosensitive area is 0.589 μm2~0.711 μm2, described second photosensitive area is 1.8 times~2.0 times of described first photosensitive area.
4. pel array as claimed in claim 1, it is characterised in that described second area is to the distance of camera lens optical axis place straight line less than or equal to second distance, and described pel array also includes:
To the distance of camera lens optical axis place straight line more than the 3rd region of second distance;
The each pixel being positioned at described 3rd region has the 3rd photosensitive area;
Described 3rd photosensitive area is more than described second photosensitive area.
5. pel array as claimed in claim 4, it is characterised in that the minimum length of side of described pel array is more than 2.84mm, and described first distance is 0.91mm~1.00mm, and described second distance is 1.29mm~1.42mm.
6. pel array as claimed in claim 5, it is characterised in that the magnitude range of described first photosensitive area is 0.589 μm2~0.711 μm2, described second photosensitive area is 1.6 times~1.7 times of described first photosensitive area, and described 3rd photosensitive area is 1.8 times~2.0 times of described second photosensitive area.
7. pel array as claimed in claim 4, it is characterised in that described 3rd region is to the distance of camera lens optical axis place straight line less than or equal to the 3rd distance, and described pel array also includes:
To the distance of camera lens optical axis place straight line more than the 4th region of the 3rd distance;
The each pixel being positioned at described 4th region has the 4th photosensitive area;
Described 4th photosensitive area is more than described 3rd photosensitive area.
8. pel array as claimed in claim 7, it is characterised in that described 4th region is to the distance of camera lens optical axis place straight line less than or equal to the 4th distance, and described pel array also includes:
To the distance of camera lens optical axis place straight line more than the 5th region of the 4th distance;
The each pixel being positioned at described 5th region has the 5th photosensitive area;
Described 5th photosensitive area is more than described 4th photosensitive area.
9. the method for the photoresponse uniformity improving pel array, it is characterised in that described method includes:
Thering is provided pel array, described pel array includes multiple pixels of array arrangement;
Arranging in described pel array to the distance of camera lens optical axis place straight line less than or equal to the region of the first distance is first area;
Arranging in described pel array to the distance of camera lens optical axis place straight line more than the region of the first distance is second area;
The each pixel arranged in described first area has the first photosensitive area;
The each pixel arranged in described second area has the second photosensitive area;
Described second photosensitive area is set more than described first photosensitive area, to reduce the photoresponse difference between the pixel in described first area and the pixel in described second area.
10. the method for the photoresponse uniformity improving pel array as claimed in claim 9, it is characterised in that also include:
The described second area distance to camera lens optical axis place straight line is set less than or equal to second distance;
Arranging in described pel array to the distance of camera lens optical axis place straight line more than the region of second distance is the 3rd region;
The each pixel arranged in described 3rd region has the 3rd photosensitive area;
Described 3rd photosensitive area is set more than described second photosensitive area, to reduce the photoresponse difference between the pixel in described second area and the pixel in described 3rd region.
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