CN105810629A - Support table and chip bonding method and device - Google Patents
Support table and chip bonding method and device Download PDFInfo
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- CN105810629A CN105810629A CN201610172852.8A CN201610172852A CN105810629A CN 105810629 A CN105810629 A CN 105810629A CN 201610172852 A CN201610172852 A CN 201610172852A CN 105810629 A CN105810629 A CN 105810629A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/83002—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Liquid Crystal (AREA)
Abstract
The invention provides a support table and a chip bonding method and device. The support table is used for supporting a substrate, wherein the substrate comprises a second region and a first region except the second region, the second region is attached to a circuit board to be bonded, the support table comprises a first support part and a second support part, the first support part is in correspondence to the first region, the support surface of the first support part can be in contact with the first region to support the substrate, the second support part is in correspondence to the second region and can move relative to the first support part so that the second support part is switched between a first state and a second state, the support surface of the second support part and the support surface of the first support part are arranged in different planes when the second support is in the first state, and the support surface of the second support part and the support surface of the first support part are arranged in the same plane when the second support is in the second state. With the technical scheme provided by the invention, the problem of chip on glass (COG) Mura in a light leakage form of an existing display device in an L0 state can be solved.
Description
Technical field
The present invention relates to the processing technology of display device, particularly relate to a kind of support platform, chip bonding method and device.
Background technology
Fig. 1 is the schematic cross-section of display panels in prior art, as shown in Figure 1, display panels mainly includes glass substrate 10, PCB (PrintedCircuitBoard, printed circuit board (PCB)) 11, IC (IntegratedCircuit, surface-mounted integrated circuit) 12 etc., general COG (ChipOnGlass, it is fixed on the chip on glass substrate) binding (Bonding) mode, and by ACF (AnisotropicConductiveadhesiveFilm, anisotropy conductiving glue) 13, glass substrate 10 is connected with IC12.
Tradition COG binding technique specifically include that glass substrate 10 clean, polarizer sheet sticking, ACF13 attaching, COG precompressed, this pressure of COG, FPC (flexible PCB) 14 attaching, the technical process such as PCB11 attaching.Wherein, what play Main Function is this pressure of COG, and ACF13 is hardened, thus IC12 and glass substrate 10 being linked together by acting as of this pressure of COG: be compressed on by the particle in ACF13 between the electrode of IC12 and glass substrate 10 simultaneously.
As shown in Figure 2, prior art is when carrying out this pressure of COG, owing to the hardening temperature of ACF is more than 140 DEG C, therefore, ACF13 in order to avoid being pasted between IC12 and glass substrate 10 was first hardened before utilizing joint tool 16 to carry out high-temperature pressurizing and occurs binding abnormal, and the temperature supporting platform 15 of bottom needs the hardening temperature lower than ACF.If on the other hand the temperature difference of glass substrate 10 upper and lower is relatively larger, glass substrate 10 can be distorted phenomenon, therefore, generally the temperature supporting platform 15 of bottom is arranged on about 80 DEG C.nullSo，When carrying out this pressure of COG，It is positioned at the high-temperature pressurizing that the joint tool 16 above IC12 is with 145 DEG C，And the temperature supporting platform 15 of bottom is approximately in about 80 DEG C，Due to joint tool 16 and the existence temperature difference supporting platform 15，Glass substrate 10 and IC12 also will appear from the temperature difference，As shown in Figure 3，ACF13 and the IC12 state hardening more to expand than glass substrate 10，When after this pressure, temperature drops to room temperature，Inflated IC12 will produce more contraction than glass substrate 10，As shown in Figure 4，Owing to the amount of contraction of IC12 is bigger，The bending of local is produced with U direction，In the process，The liquid crystal arrangement state in the territory, effective display area near IC12 is brought impact，Cause that the COGMura (hot spot) of light leak form occurs in display device under L0 state.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of support platform, chip bonding method and device, it is possible to solve the problem that existing display device produces the COGMura of light leak form under L0 state.
For solving above-mentioned technical problem, embodiments of the invention provide technical scheme as follows:
On the one hand, it is provided that a kind of support platform, being used for supporting underlay substrate, described underlay substrate includes attaching the second area treating binding circuit board and the first area except described second area, and described support platform includes:
First support portion of corresponding described first area, the supporting surface of described first support portion can contact to support described underlay substrate with described first area；
Second support portion of corresponding described second area, described second support portion can occur relative motion thus switching between the first state and a second state with described first support portion, wherein, when being in the first state, the supporting surface of the supporting surface of described second support portion and described first support portion is positioned in Different Plane, when being in the second state, the supporting surface of described second support portion is in the same plane with the supporting surface of described first support portion.
Further, described first support portion is made up of a multiple separate bracer, and described second support portion is made up of more than one bracer, and a bracer of described first support portion is identical with the support block size of described second support portion.
Further, also include:
Lifting structure, for driving described second support portion to move upward in the side of the supporting surface being perpendicular to the first support portion.
Further, described lifting structure includes:
Support bar, is used for supporting described second support portion；
Drive motor, for driving described support bar to move upward in the side of the supporting surface being perpendicular to the first support portion.
The embodiment of the present invention additionally provides a kind of chip bonding device, including supporting platform as above.
Further, described device also includes:
Be positioned at above described support platform, the joint tool of corresponding second area, described joint tool for being not less than the area of described second area with the area of the contact surface treating binding circuit board contacts.
Further, described device also includes:
Temperature control module, for when this pressure of chip being fixed on glass substrate, control described first support portion and be in the first preset temperature, control described second support portion and be in the second preset temperature, wherein, first preset temperature is lower than the hardening temperature of anisotropy conductiving glue, and the second preset temperature is not less than the hardening temperature of anisotropy conductiving glue；
Motion module, for attach need binding circuit board underlay substrate be placed on the first support portion before, utilize lifting structure control described second support portion be in the first state；After attaching the underlay substrate needing to bind circuit board and being placed on the first support portion, control described joint tool move down until described contact surface with treat binding circuit board contacts, control the second support portion simultaneously and be move upwardly until the supporting surface of described second support portion and contact with described underlay substrate.
Further, the first preset temperature is 80 DEG C, and the second preset temperature is 145 DEG C.
The embodiment of the present invention additionally provides a kind of chip bonding method, is applied to chip bonding device as above, and described method includes:
Control described second support portion and be in the first state, control described first support portion simultaneously and be in the first preset temperature, control described second support portion and be in the second preset temperature, wherein, first preset temperature is lower than the hardening temperature of anisotropy conductiving glue, and the second preset temperature is not less than the hardening temperature of anisotropy conductiving glue；
It is placed on attaching the underlay substrate needing to be bound circuit board on the first support portion；
Control described joint tool move down until described contact surface with treat binding circuit board contacts, control the second support portion simultaneously and be move upwardly until the supporting surface of described second support portion and contact with described underlay substrate.
Further, also include attaching before the underlay substrate needing to bind circuit board is placed on the first support portion:
Clean underlay substrate；
Anisotropy conductiving glue band is pasted onto on the second area of underlay substrate；
To treat that binding circuit board is attached on described anisotropy conductiving glue band.
Embodiments of the invention have the advantages that
In such scheme, support platform and include the first support portion and the second support portion, the supporting surface of the first support portion can with attach treat binding circuit outside area contact to support underlay substrate, second support portion correspondence attaches the region treating binding circuit, can switch between the first state and a second state, wherein, when being in the first state, the supporting surface of the second support portion and the supporting surface of the first support portion are positioned in Different Plane, when being in the second state, the supporting surface of the second support portion and the supporting surface of the first support portion are in the same plane.So before carrying out this pressure of COG, first support portion is heated to be about 80 DEG C, second support portion is heated to be about 145 DEG C, second support portion does not contact with underlay substrate, first support portion supports underlay substrate, owing to the second support portion does not contact with underlay substrate, applies temperature thus without to ACF, ACF will not be hardened, it is to avoid before carrying out this pressure of COG, ACF is first hardened and occurs binding abnormal.When carrying out this pressure of COG, there is relative motion with the first support portion in the second support portion, contacts with ACF, ACF is hardened, it is achieved treats the binding of binding circuit.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of prior art display panels；
Fig. 2 is the schematic diagram that prior art carries out this pressure of COG；
Fig. 3 is the schematic diagram that in prior art, IC and glass substrate at high temperature expand；
Fig. 4 is the schematic diagram shunk under IC and the glass substrate room temperature after high temperature in prior art；
Fig. 5 is the schematic diagram that the embodiment of the present invention carries out this pressure of COG；
Fig. 6 is the floor map that the embodiment of the present invention supports platform.
Accompanying drawing labelling
10 glass substrate 11PCB12IC13ACF14FPC
15 support support portion, platform 16 joint tool 17 first support portion 18 second
Detailed description of the invention
For making embodiments of the invention solve the technical problem that, technical scheme and advantage clearly, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
Embodiments of the invention provide one to support platform, chip bonding method and device, it is possible to solve the problem that existing display device produces the COGMura of light leak form under L0 state.
Embodiment one
The present embodiment provides one to support platform, is used for supporting underlay substrate, and described underlay substrate includes attaching the second area treating binding circuit board and the first area except described second area, and described support platform includes:
First support portion of corresponding described first area, the supporting surface of described first support portion can contact to support described underlay substrate with described first area；
Second support portion of corresponding described second area, described second support portion can occur relative motion thus switching between the first state and a second state with described first support portion, wherein, when being in the first state, the supporting surface of the supporting surface of described second support portion and described first support portion is positioned in Different Plane, when being in the second state, the supporting surface of described second support portion is in the same plane with the supporting surface of described first support portion.
In the present embodiment, support platform and include the first support portion and the second support portion, the supporting surface of the first support portion can with attach treat binding circuit outside area contact to support underlay substrate, second support portion correspondence attaches the region treating binding circuit, can switch between the first state and a second state, wherein, when being in the first state, the supporting surface of the second support portion and the supporting surface of the first support portion are positioned in Different Plane, when being in the second state, the supporting surface of the second support portion and the supporting surface of the first support portion are in the same plane.So before carrying out this pressure of COG, first support portion is heated to be about 80 DEG C, second support portion is heated to be about 145 DEG C, second support portion does not contact with underlay substrate, first support portion supports underlay substrate, owing to the second support portion does not contact with underlay substrate, applies temperature thus without to ACF, ACF will not be hardened, it is to avoid before carrying out this pressure of COG, ACF is first hardened and occurs binding abnormal.When carrying out this pressure of COG, there is relative motion with the first support portion in the second support portion, contacts with ACF, ACF is hardened, and can realize treating the binding of binding circuit.
In specific embodiment, the first support portion is made up of a multiple separate bracer, and the second support portion is made up of more than one bracer, and a bracer of the first support portion and the support block size of the second support portion are identical.
It is possible to further drive the second support portion to move upward in the side of the supporting surface being perpendicular to the first support portion by lifting structure, support platform and also include:
Lifting structure, for driving described second support portion to move upward in the side of the supporting surface being perpendicular to the first support portion.
In specific embodiment, described lifting structure includes:
Support bar, is used for supporting described second support portion；
Drive motor, for driving described support bar to move upward in the side of the supporting surface being perpendicular to the first support portion.
Embodiment two
Present embodiments provide a kind of chip bonding device, including supporting platform as above.
Further, described device also includes:
Be positioned at above described support platform, the joint tool of corresponding second area, described joint tool for being not less than the area of described second area with the area of the contact surface treating binding circuit board contacts, so when carrying out this pressure of COG, joint tool can fully to treating that binding circuit board applies pressure.
Further, described device also includes:
Temperature control module, for when this pressure of chip being fixed on glass substrate, control described first support portion and be in the first preset temperature, control described second support portion and be in the second preset temperature, wherein, first preset temperature is lower than the hardening temperature of anisotropy conductiving glue, and the second preset temperature is not less than the hardening temperature of anisotropy conductiving glue；
Motion module, for attach need binding circuit board underlay substrate be placed on the first support portion before, utilize lifting structure control described second support portion be in the first state；After attaching the underlay substrate needing to bind circuit board and being placed on the first support portion, control described joint tool move down until described contact surface with treat binding circuit board contacts, control the second support portion simultaneously and be move upwardly until the supporting surface of described second support portion and contact with described underlay substrate.
So before carrying out this pressure of COG, second support portion does not contact with underlay substrate, first support portion supports underlay substrate, owing to the second support portion does not contact with underlay substrate, temperature is applied thus without to ACF, ACF will not be hardened, it is to avoid before carrying out this pressure of COG, ACF is first hardened and occurs binding abnormal.When carrying out this pressure of COG, motion module control joint tool move down until contact surface with treat binding circuit board contacts, control simultaneously the second support portion with first support portion occur relative motion, contact with ACF, ACF is hardened, it is achieved treat the binding of binding circuit.
Further, the first preset temperature is 80 DEG C, and the second preset temperature is 145 DEG C.
Embodiment three
Present embodiments providing a kind of chip bonding method, be applied to chip bonding device as above, described method includes:
Control described second support portion and be in the first state, control described first support portion simultaneously and be in the first preset temperature, control described second support portion and be in the second preset temperature, wherein, first preset temperature is lower than the hardening temperature of anisotropy conductiving glue, and the second preset temperature is not less than the hardening temperature of anisotropy conductiving glue；
It is placed on attaching the underlay substrate needing to be bound circuit board on the first support portion；
Control described joint tool move down until described contact surface with treat binding circuit board contacts, control the second support portion simultaneously and be move upwardly until the supporting surface of described second support portion and contact with described underlay substrate.
In the present embodiment, before carrying out this pressure of COG, control described second support portion and be in the first state, second support portion does not contact with underlay substrate, first support portion supports underlay substrate, control described first support portion simultaneously and be in the first preset temperature, control described second support portion and be in the second preset temperature, wherein, first preset temperature hardening temperature lower than ACF, second preset temperature is not less than the hardening temperature of ACF, owing to the second support portion does not contact with underlay substrate, temperature is applied thus without to ACF, ACF will not be hardened, avoid ACF before carrying out this pressure of COG to be first hardened and occur binding abnormal.When carrying out this pressure of COG, control joint tool move down until contact surface with treat binding circuit board contacts, control simultaneously the second support portion with first support portion occur relative motion, contact with ACF, ACF hardened, it is achieved treat binding circuit binding.
Further, also include attaching before the underlay substrate needing to bind circuit board is placed on the first support portion:
Clean underlay substrate；
Anisotropy conductiving glue band is pasted onto on the second area of underlay substrate；
To treat that binding circuit board is attached on described anisotropy conductiving glue band.
Embodiment four
Present embodiments provide a kind of chip bonding device, as it is shown in figure 5, this chip bonding device includes supporting platform and being positioned at the joint tool 16 supported above platform.Wherein, support platform and support underlay substrate 10, underlay substrate 10 includes attaching the second area treating binding circuit board and the first area except second area, support platform and include the first support portion 17 of corresponding first area and the second support portion 18 of corresponding second area, the supporting surface of the first support portion 17 contacts to support underlay substrate 10 with underlay substrate 10, relative motion can be there is thus switching between the first state and a second state in the second support portion 18 with the first support portion 17, wherein, when being in the first state, as shown in Fig. 5 left half, the supporting surface of the second support portion 18 and the supporting surface of the first support portion 17 are positioned in Different Plane, second support portion 18 does not contact with underlay substrate 10；When being in the second state, as shown in Fig. 5 right half, the supporting surface of the second support portion 18 and the supporting surface of the first support portion 17 are in the same plane, and the second support portion 18 contacts with underlay substrate 10.
Chip bonding device also includes: be positioned at support above platform, the joint tool 16 of corresponding second area, joint tool 16 is for treating that binding circuit board is with high-temperature pressurizing, joint tool 16 is not less than the area of second area with the area of contact surface treating binding circuit board contacts, so when carrying out this pressure of COG, joint tool can fully to treating that binding circuit board applies pressure.
Specifically, it is possible to drive the second support portion to move upward in the side of the supporting surface being perpendicular to the first support portion by lifting structure.Lifting structure may include that the support bar supporting the second support portion and the drive motor driving support bar to move upward in the side of the supporting surface being perpendicular to the first support portion.
Chip bonding device also includes temperature control module and motion module, wherein, temperature control module, when this pressure of chip being fixed on underlay substrate, controls the first support portion 17 and is in the first preset temperature, controls the second support portion 18 and is in the second preset temperature, wherein, first preset temperature is lower than the hardening temperature of anisotropy conductiving glue, and the second preset temperature is not less than the hardening temperature of anisotropy conductiving glue, usually, first preset temperature is 80 DEG C, and the second preset temperature is 145 DEG C；Attach need binding circuit board underlay substrate 10 be placed on the first support portion 17 before, motion module utilizes lifting structure to control the second support portion 18 and is in the first state；After attaching the underlay substrate 10 needing to bind circuit board and being placed on the first support portion 17, control joint tool 16 move down until contact surface with treat binding circuit board contacts, control the second support portion 18 simultaneously and be move upwardly until the supporting surface of the second support portion 18 and contact with underlay substrate 10.
Wherein, as shown in Figure 6, first support portion 17 can be made up of a multiple separate bracer, second support portion 18 can also be made up of more than one bracer, the size of a bracer of the first support portion 17 and a bracer of the second support portion 18 is all identical with specification, according to the size and location treating binding circuit board, in that case it can be decided which bracer forming the second support portion 18 by, remaining bracer forms the first support portion 17.
The chip bonding method of the present embodiment specifically includes following steps:
After step 1, cleaning underlay substrate 10, ACF13 is fixed on underlay substrate 10；
Concrete, first carry out the cleaning of underlay substrate 10, the alien material on underlay substrate 10 surface is disposed；Described alien material includes Organic substance and inorganic matter, it is possible to use physical cleaning mode cleans inorganic matter, utilizes Chemical cleaning mode cleaning organic matter；Followed by dehydrator, the underlay substrate 10 after cleaning is carried out drying and processing, and utilize organic solvent to be cleaned up in the pre-binding region on the underlay substrate 10 after above-mentioned process, and utilize the pre-binding region that ACF13 is fixed on underlay substrate 10 by equipment, then into COG binding technique.
Step 2, carry out COG bind technique precompressed process, IC12 is fixed on ACF13；
Concrete, after ACF13 is fixed on the pre-binding region on underlay substrate 10, carry out COG and bind the precompressed process of technique, by IC12 and underlay substrate 10 para-position, by certain pressure, IC12 is fixed on ACF13 after para-position, play the effect of para-position, after can be carried out COG bind technique this pressure process.
Step 3, the temperature controlling the first support portion 17 are 80 DEG C, and the temperature controlling the second support portion 18 is 145 DEG C, and the temperature controlling joint tool 16 is 145 DEG C, controls the second support portion 18 simultaneously and moves up, and joint tool 16 moves down；
In step 1 and 2, the supporting surface of the second support portion 18 and the supporting surface of the first support portion 17 are positioned in Different Plane, second support portion 18 does not contact with underlay substrate 10, therefore, before IC12 is fixed on ACF13, it is also possible to the temperature controlling the first support portion 17 is 80 DEG C, the temperature controlling the second support portion 18 is 145 DEG C, owing to the second support portion 18 does not contact with underlay substrate 10, applying temperature thus without to ACF13, ACF13 will not be hardened.
Step 4, while the second support portion 18 contacts with underlay substrate 10, joint tool 16 also contacts with IC12, second support portion 18 and joint tool 16 are common to ACF13 pressurization, underlay substrate 10, ACF13 and IC12 are carried out this pressure of high temperature, this pressure of low temperature and this pressure of high temperature and process by joint tool 16, complete whole pressure processing procedure, realize being fully cured of IC12 and underlay substrate 10, complete the binding of IC12.
In the present embodiment, before carrying out this pressure of COG, second support portion does not contact with underlay substrate, first support portion supports underlay substrate, owing to the second support portion does not contact with underlay substrate, applying temperature thus without to ACF, ACF will not be hardened, it is to avoid before carrying out this pressure of COG, ACF is first hardened and occurs binding abnormal.When carrying out this pressure of COG, there is relative motion with the first support portion in the second support portion, contacts with ACF, ACF is hardened, and can realize treating the binding of binding circuit.
The above is the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, under the premise without departing from principle of the present invention; can also making some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (10)
1. supporting a platform, be used for supporting underlay substrate, described underlay substrate includes attaching the second area treating binding circuit board and the first area except described second area, it is characterised in that described support platform includes:
First support portion of corresponding described first area, the supporting surface of described first support portion can contact to support described underlay substrate with described first area；
Second support portion of corresponding described second area, described second support portion can occur relative motion thus switching between the first state and a second state with described first support portion, wherein, when being in the first state, the supporting surface of the supporting surface of described second support portion and described first support portion is positioned in Different Plane, when being in the second state, the supporting surface of described second support portion is in the same plane with the supporting surface of described first support portion.
2. support platform according to claim 1, it is characterized in that, described first support portion is made up of a multiple separate bracer, and described second support portion is made up of more than one bracer, and a bracer of described first support portion is identical with the support block size of described second support portion.
3. support platform according to claim 1, it is characterised in that also include:
Lifting structure, for driving described second support portion to move upward in the side of the supporting surface being perpendicular to the first support portion.
4. support platform according to claim 1, it is characterised in that described lifting structure includes:
Support bar, is used for supporting described second support portion；
Drive motor, for driving described support bar to move upward in the side of the supporting surface being perpendicular to the first support portion.
5. a chip bonding device, it is characterised in that include the support platform as according to any one of claim 1-4.
6. chip bonding device according to claim 5, it is characterised in that described device also includes:
Be positioned at above described support platform, the joint tool of corresponding second area, described joint tool for being not less than the area of described second area with the area of the contact surface treating binding circuit board contacts.
7. chip bonding device according to claim 6, it is characterised in that described device also includes:
Temperature control module, for when this pressure of chip being fixed on glass substrate, control described first support portion and be in the first preset temperature, control described second support portion and be in the second preset temperature, wherein, first preset temperature is lower than the hardening temperature of anisotropy conductiving glue, and the second preset temperature is not less than the hardening temperature of anisotropy conductiving glue；
Motion module, for attach need binding circuit board underlay substrate be placed on the first support portion before, utilize lifting structure control described second support portion be in the first state；After attaching the underlay substrate needing to bind circuit board and being placed on the first support portion, control described joint tool move down until described contact surface with treat binding circuit board contacts, control the second support portion simultaneously and be move upwardly until the supporting surface of described second support portion and contact with described underlay substrate.
8. chip bonding device according to claim 7, it is characterised in that the first preset temperature is 80 DEG C, the second preset temperature is 145 DEG C.
9. a chip bonding method, it is characterised in that being applied to the chip bonding device as according to any one of claim 6-8, described method includes:
Control described second support portion and be in the first state, control described first support portion simultaneously and be in the first preset temperature, control described second support portion and be in the second preset temperature, wherein, first preset temperature is lower than the hardening temperature of anisotropy conductiving glue, and the second preset temperature is not less than the hardening temperature of anisotropy conductiving glue；
It is placed on attaching the underlay substrate needing to be bound circuit board on the first support portion；
Control described joint tool move down until described contact surface with treat binding circuit board contacts, control the second support portion simultaneously and be move upwardly until the supporting surface of described second support portion and contact with described underlay substrate.
10. chip bonding method according to claim 9, it is characterised in that also include attaching before the underlay substrate needing to bind circuit board is placed on the first support portion:
Clean underlay substrate；
Anisotropy conductiving glue band is pasted onto on the second area of underlay substrate；
To treat that binding circuit board is attached on described anisotropy conductiving glue band.
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| CN201610172852.8A CN105810629B (en) | 2016-03-24 | 2016-03-24 | Supporting table, chip bonding method and device |
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| CN201610172852.8A CN105810629B (en) | 2016-03-24 | 2016-03-24 | Supporting table, chip bonding method and device |
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| CN105810629B (en) | 2018-06-12 |
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