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CN105789549A - Method for preparing electrode on two-dimensional material - Google Patents

Method for preparing electrode on two-dimensional material Download PDF

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CN105789549A
CN105789549A CN201610261497.1A CN201610261497A CN105789549A CN 105789549 A CN105789549 A CN 105789549A CN 201610261497 A CN201610261497 A CN 201610261497A CN 105789549 A CN105789549 A CN 105789549A
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adhesive tape
dimensional material
electrode
dimensional
film
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CN105789549B (en
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郑伟涛
范苏娜
刘仁威
于陕升
田宏伟
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Jilin University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/04Processes of manufacture in general
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/84Processes for the manufacture of hybrid or EDL capacitors, or components thereof
    • H01G11/86Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

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Abstract

本发明的一种简便可控的在二维材料上制备电极的方法属于材料科学及电子技术领域,步骤有,将载网(3)粘在打孔的胶带(4)的粘性面上,将聚合物薄膜(5)固定在胶带(4)的光滑面上,利用微观操作手转移至二维材料(2)的目标位置处并压紧,在载网(3)和二维材料(2)上沉积金属电极,用镊子去除载网(3),在二维材料(2)上得到微电极(7)。本发明的方法对设备要求低、条件温和、操作简便;而且仅通过改变载网的种类,即可方便地调控电极的形状及尺寸,适用性广。

A simple and controllable method for preparing electrodes on two-dimensional materials according to the present invention belongs to the field of material science and electronic technology. The polymer film (5) is fixed on the smooth surface of the adhesive tape (4), and transferred to the target position of the two-dimensional material (2) by the microscopic manipulator and pressed tightly, and the carrier net (3) and the two-dimensional material (2) Metal electrodes are deposited on the top, the grid (3) is removed with tweezers, and a microelectrode (7) is obtained on the two-dimensional material (2). The method of the invention has low requirements on equipment, mild conditions and simple operation; and the shape and size of the electrode can be conveniently adjusted only by changing the type of the carrier net, and has wide applicability.

Description

一种在二维材料上制备电极的方法A method for preparing electrodes on two-dimensional materials

技术领域technical field

本发明属于材料科学及电子技术领域,涉及一种简便可控的在二维材料上制备电极的方法。The invention belongs to the field of material science and electronic technology, and relates to a simple and controllable method for preparing electrodes on two-dimensional materials.

背景技术Background technique

石墨烯、过渡金属二硫化物、氮化硼、二维聚合物等二维材料因其独特的性质引起了研究者的广泛关注,有望在微型电池、超级电容器、晶体管、微电子器件等领域得到广泛应用。其中,在二维材料表面制备电极是进行基础科学研究和实际应用的关键。然而,二维材料的尺寸较小,形状各异,造成了微电极的制备困难。目前,研究者主要通过紫外光刻法、电子束沉积法和聚焦离子束沉积法等微加工方法在二维材料表面制备电极。其中,紫外光刻法需经过涂胶、紫外曝光、显影、刻蚀等工艺,不仅步骤繁琐,而且易对二维材料造成破坏。电子束沉积法和聚焦离子束沉积法能在二维材料的指定位置沉积电极,但所需设备昂贵,操作繁琐,耗时较长,并且易对二维聚合物造成辐照损伤,影响性能表征。因而,本领域仍然需要开发一种简便的适用性广的在二维材料上制备电极的方法。Two-dimensional materials such as graphene, transition metal dichalcogenides, boron nitride, and two-dimensional polymers have attracted extensive attention from researchers due to their unique properties, and are expected to be widely used in the fields of micro batteries, supercapacitors, transistors, and microelectronic devices. widely used. Among them, the preparation of electrodes on the surface of two-dimensional materials is the key to basic scientific research and practical applications. However, the small size and various shapes of 2D materials make the preparation of microelectrodes difficult. At present, researchers mainly prepare electrodes on the surface of two-dimensional materials through microfabrication methods such as ultraviolet lithography, electron beam deposition, and focused ion beam deposition. Among them, the ultraviolet lithography method needs to go through processes such as glue coating, ultraviolet exposure, development, and etching. Not only are the steps cumbersome, but it is also easy to cause damage to the two-dimensional material. Electron beam deposition and focused ion beam deposition can deposit electrodes at specified positions on two-dimensional materials, but the required equipment is expensive, the operation is cumbersome, time-consuming, and it is easy to cause radiation damage to two-dimensional polymers, affecting performance characterization . Therefore, the field still needs to develop a simple and widely applicable method for preparing electrodes on two-dimensional materials.

发明内容Contents of the invention

本发明要解决的技术问题是,克服背景技术存在的问题,提供一种简便可控的在二维材料上制备电极的方法,用于在各种二维材料的目标位置制备形状和尺寸可控的微电极,并在制备过程中避免对二维材料造成损伤和破坏,适用范围广、操作简便、耗时短。The technical problem to be solved by the present invention is to overcome the problems existing in the background technology and provide a simple and controllable method for preparing electrodes on two-dimensional materials, which is used to prepare electrodes with controllable shapes and sizes at the target positions of various two-dimensional materials. The microelectrode can avoid damage and damage to the two-dimensional material during the preparation process, and has a wide range of applications, easy operation, and short time-consuming.

具体的技术方案如下:The specific technical scheme is as follows:

一种在二维材料上制备电极的方法,有以下步骤:A method for preparing an electrode on a two-dimensional material, comprising the following steps:

1)将二维材料2转移至SiO2/Si基底1上;1) Transfer the two-dimensional material 2 onto the SiO 2 /Si substrate 1;

2)采用打孔器在胶带4上打一个直径为1~2.5mm的小孔;2) Punch a small hole with a diameter of 1 to 2.5 mm on the tape 4 with a hole puncher;

3)将载网3粘在胶带4的粘性面上,其中载网3的中心点与胶带4上的小孔的中心点重合;3) Stick the carrier net 3 on the adhesive surface of the adhesive tape 4, wherein the center point of the carrier net 3 coincides with the center point of the small hole on the adhesive tape 4;

4)将聚合物薄膜5固定在胶带4的光滑面上,所述聚合物薄膜5的厚度为1~5mm;4) fixing the polymer film 5 on the smooth surface of the adhesive tape 4, the thickness of the polymer film 5 being 1-5 mm;

5)将步骤4)得到的载网3/胶带4/聚合物薄膜5的组合体安装在微观操作手上的载玻片6上并利用微观操作手将组合体转移至步骤1)中的二维材料2的目标位置处,使组合体带有载网3的一侧朝向二维材料2并压紧;5) The assembly of the carrier grid 3/adhesive tape 4/polymer film 5 obtained in step 4) is installed on the glass slide 6 on the microscopic manipulator and the assembly is transferred to the second step in step 1) using the microscopic manipulator. At the target position of the two-dimensional material 2, make the side of the assembly with the carrier net 3 face the two-dimensional material 2 and compress it;

6)将步骤5)所述的微观操作手缓慢垂直抬起,并移除聚合物薄膜5,在SiO2/Si基底1上得到覆盖载网3及胶带4的二维材料2;6) Slowly lift the micromanipulator described in step 5) vertically, and remove the polymer film 5, and obtain a two-dimensional material 2 covering the grid 3 and the adhesive tape 4 on the SiO 2 /Si substrate 1;

7)在载网3、胶带4和二维材料2上沉积50nm~200nm厚度的金属电极;7) Depositing a metal electrode with a thickness of 50nm to 200nm on the grid 3, the adhesive tape 4 and the two-dimensional material 2;

8)用镊子去除载网3和胶带4,在二维材料2上得到微电极7。8) Remove the grid 3 and the adhesive tape 4 with tweezers, and obtain the microelectrode 7 on the two-dimensional material 2 .

本发明的一种在二维材料上制备电极的方法中,所述的二维材料2优选石墨烯、二硫化钼、二硫化钨、二氧化钛、氮化硼或二维聚合物;所述的二维材料的二维尺寸优选200nm×500nm~10cm×10cm,厚度优选0.3nm~100μm;所述的SiO2/Si基底1中SiO2层的厚度优选100~500nm;所述的胶带4上的小孔直径优选为2mm。In a method for preparing an electrode on a two-dimensional material of the present invention, the two-dimensional material 2 is preferably graphene, molybdenum disulfide, tungsten disulfide, titanium dioxide, boron nitride or a two-dimensional polymer; The two-dimensional size of the dimensional material is preferably 200nm×500nm~10cm×10cm, and the thickness is preferably 0.3nm~100μm; the thickness of the SiO 2 layer in the SiO 2 /Si substrate 1 is preferably 100~500nm; the small The hole diameter is preferably 2 mm.

本发明的一种在二维材料上制备电极的方法中,所述的载网3可以是铜网、镍网、金网、钛网或钼网。In a method for preparing an electrode on a two-dimensional material according to the present invention, the carrier grid 3 may be a copper grid, a nickel grid, a gold grid, a titanium grid or a molybdenum grid.

本发明的一种在二维材料上制备电极的方法中,步骤4)中所述的将聚合物薄膜5固定在胶带4的光滑面上,可以利用胶带4的光滑面与聚合物薄膜5之间的粘附力固定的;所述的聚合物薄膜5优选聚二甲基硅氧烷薄膜、聚对苯二甲酸乙二醇酯薄膜、聚甲基丙烯酸甲酯薄膜或聚氯乙烯薄膜;聚合物薄膜5的厚度优选为3mm。In a method for preparing an electrode on a two-dimensional material of the present invention, the polymer film 5 described in step 4) is fixed on the smooth surface of the adhesive tape 4, the smooth surface of the adhesive tape 4 and the polymer film 5 can be used The adhesive force between is fixed; The preferred polydimethylsiloxane film of described polymer film 5, polyethylene terephthalate film, polymethyl methacrylate film or polyvinyl chloride film; The thickness of the object film 5 is preferably 3mm.

本发明的一种在二维材料上制备电极的方法中,步骤5)可以在光学显微镜下进行操作。In a method for preparing an electrode on a two-dimensional material of the present invention, step 5) can be performed under an optical microscope.

本发明的一种简便可控的在二维材料上制备电极的方法中,步骤7)中所述的金属电极优选金电极、铂电极、钨电极或镍电极;金属电极的厚度优选100nm;金属电极的形状和尺寸可以通过选择不同的载网进行调控。In a simple and controllable method for preparing electrodes on two-dimensional materials of the present invention, the metal electrode described in step 7) is preferably a gold electrode, a platinum electrode, a tungsten electrode or a nickel electrode; the thickness of the metal electrode is preferably 100nm; the metal electrode The shape and size of the electrodes can be adjusted by choosing different grids.

与现有技术相比,本发明具有以下有益效果:Compared with the prior art, the present invention has the following beneficial effects:

1、本发明方法在光学显微镜下进行操作,可准确定位,在二维材料的指定位置沉积电极。1. The method of the present invention is operated under an optical microscope, which can accurately position and deposit electrodes at designated positions of two-dimensional materials.

2、本发明方法利用普通的蒸镀设备即可实现电极的制备,设备要求低、操作简便;而且仅通过改变载网的种类,即可方便地调控电极的形状及尺寸。2. The method of the present invention can realize the preparation of electrodes by using ordinary evaporation equipment, which has low equipment requirements and is easy to operate; and only by changing the type of the carrier net, the shape and size of the electrodes can be adjusted conveniently.

3、本发明的方法制备的电极制备的电极附着力良好,接触电阻小;在保证较好的电极质量的前提下,在较温和的条件下操作进行,更重要的是避免对各种二维材料的损伤和破坏,适用性广。3. The electrode prepared by the method of the present invention has good adhesion and small contact resistance; under the premise of ensuring better electrode quality, the operation is carried out under milder conditions, and more importantly, avoiding the use of various two-dimensional Material damage and destruction, wide applicability.

附图说明:Description of drawings:

图1是本发明步骤1)中将二维材料转移至SiO2/Si基底上的光学显微镜图。Fig. 1 is an optical microscope image of transferring a two-dimensional material onto a SiO 2 /Si substrate in step 1) of the present invention.

图2是本发明步骤3)得到的带有载网的胶带示意图。Fig. 2 is a schematic diagram of an adhesive tape with a carrier net obtained in step 3) of the present invention.

图3是本发明步骤4)将胶带固定在聚合物薄膜上的结构示意图。Fig. 3 is a structural schematic diagram of step 4) of the present invention to fix the adhesive tape on the polymer film.

图4是本发明步骤5)安装聚合物薄膜后的载玻片示意图。Fig. 4 is a schematic diagram of a glass slide after installing a polymer film in step 5) of the present invention.

图5是本发明步骤5)将带有载网和胶带的聚合物薄膜转移到二维材料上的示意图。Fig. 5 is a schematic diagram of step 5) of the present invention to transfer the polymer film with the grid and adhesive tape onto the two-dimensional material.

图6是本发明步骤6)得到的覆盖有载网和胶带的二维材料的示意图。Fig. 6 is a schematic diagram of a two-dimensional material covered with a carrier grid and adhesive tape obtained in step 6) of the present invention.

图7是本发明步骤7)沉积金属电极后的二维材料示意图。Fig. 7 is a schematic diagram of a two-dimensional material after depositing a metal electrode in step 7) of the present invention.

图8是本发明步骤8)移除载网之后的制备好微电极的二维材料示意图。Fig. 8 is a schematic diagram of the two-dimensional material of the prepared microelectrode after removing the grid in step 8) of the present invention.

图9是实施例1制备好微电极后的二维材料的光学显微镜图。FIG. 9 is an optical microscope image of the two-dimensional material after the microelectrode is prepared in Example 1.

上述各图中的附图标记均为:1为SiO2/Si基底,2为二维材料,3为载网,4为胶带,5为聚合物薄膜,6为载玻片,7为微电极。The reference signs in the above figures are: 1 is SiO 2 /Si substrate, 2 is two-dimensional material, 3 is grid, 4 is adhesive tape, 5 is polymer film, 6 is glass slide, 7 is microelectrode .

具体实施方式detailed description

下面结合具体实施方式,进一步阐述本发明。应理解,这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解,在阅读了本发明的内容之后,本领域技术人员可以对本发明作各种改动或修改,这些等价形式同样落于本申请所附权利要求书所限定的范围。The present invention will be further described below in combination with specific embodiments. It should be understood that these examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the content of the present invention, those skilled in the art may make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the present application.

实施例1Example 1

1)将二维聚卟啉转移至SiO2(300nm)/Si基底上(注:300nm指的是SiO2的厚度,以下各实施例该处括号内数字均表示SiO2的厚度),参见附图1。本实施例中二维材料2是二维聚卟啉。由图1的光学显微镜图可以看出,在视野范围内二维聚卟啉的尺寸约为5μm×50μm,厚度为4nm;1) Transfer two-dimensional polyporphyrin to SiO 2 (300nm)/Si substrate (note: 300nm refers to the thickness of SiO 2 , and the numbers in brackets in the following embodiments all indicate the thickness of SiO 2 ), see the attached figure 1. In this embodiment, the two-dimensional material 2 is two-dimensional polyporphyrin. From the optical microscope picture in Figure 1, it can be seen that the size of the two-dimensional polyporphyrin within the field of view is about 5 μm × 50 μm, and the thickness is 4 nm;

2)采用打孔器在胶带上进行打孔,获得带有小孔的胶带,小孔的直径为2mm;2) Use a puncher to punch holes on the adhesive tape to obtain an adhesive tape with small holes, and the diameter of the small holes is 2mm;

3)将2000目的铜网固定在步骤2)得到的带有小孔的胶带的粘性面上,得到带有2000目的铜网的胶带,其中铜网的中心点与小孔的中心点重合;3) 2000 mesh copper mesh is fixed on the sticky surface of the adhesive tape with small holes obtained in step 2), to obtain an adhesive tape with 2000 mesh copper mesh, wherein the center point of the copper mesh coincides with the center point of the small hole;

4)将步骤3)得到的带有2000目的铜网的胶带的光滑面固定在聚二甲基硅氧烷薄膜上,聚二甲基硅氧烷薄膜的厚度为2mm;4) Fix the smooth surface of the adhesive tape with 2000-mesh copper mesh obtained in step 3) on the polydimethylsiloxane film, and the thickness of the polydimethylsiloxane film is 2mm;

5)经步骤4)得到的带有的铜网和胶带的聚二甲基硅氧烷薄膜安装在微观操作手上的载玻片上并利用微观操作手将其转移至步骤1)中SiO2(300nm)/Si基底上的二维聚卟啉的目标位置处并压紧;5) The polydimethylsiloxane film with the copper mesh and adhesive tape obtained in step 4) is installed on the glass slide on the micromanipulator and transferred to the SiO 2 ( 300nm)/Si substrate on the target position of the two-dimensional polyporphyrin and compacted;

6)将微观操作手缓慢垂直抬起,并移除聚二甲基硅氧烷薄膜,在SiO2(300nm)/Si基底上得到覆盖铜网及胶带的二维聚卟啉;6) Slowly lift the micromanipulator vertically, and remove the polydimethylsiloxane film, and obtain a two-dimensional polyporphyrin covered with copper mesh and tape on the SiO 2 (300nm)/Si substrate;

7)在铜网、胶带和二维聚卟啉上沉积厚度为100nm的金电极;7) Depositing a gold electrode with a thickness of 100nm on the copper mesh, adhesive tape and two-dimensional polyporphyrin;

8)沉积完电极后,用镊子去除铜网和胶带,在二维聚卟啉上得到微电极。其光学显微镜图如图9所示,从图中可以看出用本发明的方法制备的微电极清晰分明,电极质量较高,且在沉积完金电极后,二维聚卟啉形貌完好,说明本发明的方法对二维材料没有造成损伤和破坏。8) After depositing the electrodes, use tweezers to remove the copper mesh and tape to obtain microelectrodes on the 2D polyporphyrin. Its optical microscope picture is as shown in Figure 9, it can be seen from the figure that the microelectrode prepared by the method of the present invention is clear and distinct, the electrode quality is high, and after the gold electrode is deposited, the two-dimensional polyporphyrin has a good morphology. It shows that the method of the present invention does not cause damage and destruction to the two-dimensional material.

实施例2Example 2

1)将石墨烯转移至SiO2(200nm)/Si基底上;1) transfer graphene to SiO 2 (200nm)/Si substrate;

2)采用打孔器在胶带上进行打孔,获得带有小孔的胶带,小孔的直径为1.5mm;2) Use a puncher to punch holes on the adhesive tape to obtain an adhesive tape with small holes, the diameter of which is 1.5mm;

3)将1000目的镍网固定在步骤2)得到的带有小孔的胶带的粘性面上,得到带有1000目的镍网的胶带,其中镍网的中心点与小孔的中心点重合;3) 1000 mesh nickel meshes are fixed on the sticky surface of the adhesive tape with small holes obtained in step 2), to obtain tapes with 1000 mesh nickel meshes, wherein the central point of the nickel mesh coincides with the central point of the small holes;

4)将步骤3)得到的带有1000目的镍网的胶带的光滑面固定在聚对苯二甲酸乙二醇酯薄膜上,聚对苯二甲酸乙二醇酯薄膜的厚度为3mm;4) the smooth surface of the adhesive tape with 1000 mesh nickel mesh obtained in step 3) is fixed on the polyethylene terephthalate film, and the thickness of the polyethylene terephthalate film is 3mm;

5)经步骤4)得到的带有的镍网和胶带的聚对苯二甲酸乙二醇酯薄膜安装在微观操作手上的载玻片上并利用微观操作手将其转移至步骤1)中SiO2(200nm)/Si基底上的石墨烯的目标位置处并压紧;5) The polyethylene terephthalate film with the nickel mesh and adhesive tape obtained in step 4) was mounted on a glass slide on the micromanipulator and transferred to the SiO2 film in step 1) using the micromanipulator. 2 (200nm)/Si substrate on the target position of graphene and compacted;

6)将微观操作手缓慢垂直抬起,移除聚对苯二甲酸乙二醇酯薄膜,在SiO2(200nm)/Si基底上得到覆盖镍网和胶带的石墨烯;6) Slowly lift the micromanipulator vertically, remove the polyethylene terephthalate film, and obtain graphene covered with nickel mesh and adhesive tape on the SiO 2 (200nm)/Si substrate;

7)在镍网、胶带和石墨烯上沉积厚度为150nm的铂电极;7) Depositing a platinum electrode with a thickness of 150nm on nickel mesh, adhesive tape and graphene;

8)沉积完电极后用镊子去除已镍网和胶带,在石墨烯上得到微电极。8) After depositing the electrode, remove the nickel mesh and tape with tweezers, and obtain a microelectrode on the graphene.

实施例3Example 3

1)将二硫化钼转移至SiO2(500nm)/Si基底上;1) transfer molybdenum disulfide to SiO 2 (500nm)/Si substrate;

2)采用打孔器在胶带上进行打孔,获得带有小孔的胶带,小孔的直径为2.5mm;2) Use a puncher to punch holes on the adhesive tape to obtain an adhesive tape with small holes, the diameter of which is 2.5 mm;

3)将800目的钛网固定在步骤2)得到的带有小孔的胶带的粘性面上,得到带有800目的钛网的胶带,其中钛网的中心点与小孔的中心点重合;3) Fixing the 800 mesh titanium mesh on the sticky surface of the adhesive tape with small holes obtained in step 2) to obtain an adhesive tape with 800 mesh titanium mesh, wherein the central point of the titanium mesh coincides with the central point of the small hole;

4)将步骤3)得到的带有800目的钛网的胶带的光滑面固定在聚甲基丙烯酸甲酯薄膜上,聚甲基丙烯酸甲酯薄膜的厚度为4mm;4) The smooth surface of the adhesive tape with 800 mesh titanium mesh obtained in step 3) is fixed on the polymethyl methacrylate film, and the thickness of the polymethyl methacrylate film is 4mm;

5)经步骤4)得到的带有的钛网和胶带的聚甲基丙烯酸甲酯薄膜安装在微观操作手上的载玻片上并利用微观操作手将其转移至步骤1)中SiO2(500nm)/Si基底上的二硫化钼的目标位置处并压紧;5) The polymethyl methacrylate film with the titanium mesh and adhesive tape obtained in step 4) is installed on the glass slide on the micromanipulator and transferred to the SiO2 (500nm )/Molybdenum disulfide target position on the Si substrate and compacted;

6)将微观操作手缓慢垂直抬起,移除聚甲基丙烯酸甲酯薄膜,在SiO2(500nm)/Si基底上得到覆盖钛网和胶带的二硫化钼;6) Slowly lift the micromanipulator vertically, remove the polymethyl methacrylate film, and obtain molybdenum disulfide covered with titanium mesh and tape on the SiO 2 (500nm)/Si substrate;

7)在钛网、胶带和二硫化钼上沉积厚度为50nm的钨电极;7) Depositing a tungsten electrode with a thickness of 50nm on the titanium mesh, adhesive tape and molybdenum disulfide;

8)在沉积完电极后,用镊子去除钛网和胶带,在二硫化钼上得到微电极。8) After the electrodes are deposited, the titanium mesh and tape are removed with tweezers to obtain microelectrodes on molybdenum disulfide.

实施例4Example 4

1)将氮化硼转移至SiO2(100nm)/Si基底上;1) Transfer boron nitride onto SiO 2 (100nm)/Si substrate;

2)采用打孔器在胶带上进行打孔,获得带有小孔的胶带,小孔的直径为1mm;2) Use a puncher to punch holes on the adhesive tape to obtain an adhesive tape with small holes, the diameter of which is 1mm;

3)将1500目的金网固定在步骤2)得到的带有小孔的胶带的粘性面上,得到带有1500目的金网的胶带,其中金网的中心点与小孔的中心点重合;3) Fix the 1500-mesh gold mesh on the sticky surface of the adhesive tape with small holes obtained in step 2) to obtain an adhesive tape with 1500-mesh gold mesh, wherein the center point of the gold mesh coincides with the center point of the small hole;

4)将步骤3)得到的带有1500目的金网的胶带的光滑面固定在聚氯乙烯薄膜上,聚氯乙烯薄膜的厚度为1mm;4) the smooth surface of the adhesive tape with 1500 mesh gold mesh obtained in step 3) is fixed on the polyvinyl chloride film, and the thickness of the polyvinyl chloride film is 1mm;

5)经步骤4)得到的带有的金网和胶带的聚氯乙烯薄膜安装在微观操作手上的载玻片上并利用微观操作手将其转移至步骤1)中SiO2(100nm)/Si基底上的氮化硼的目标位置处并压紧;5) The polyvinyl chloride film with the gold mesh and adhesive tape obtained in step 4) is installed on the glass slide on the micromanipulator and transferred to the SiO 2 (100nm)/SiO2 (100nm)/Si boron nitride on the substrate at the target position and compacted;

6)将微观操作手缓慢垂直抬起,移除聚氯乙烯薄膜,在SiO2(100nm)/Si基底上得到覆盖金网的氮化硼;6) Slowly lift the micromanipulator vertically, remove the polyvinyl chloride film, and obtain boron nitride covered with gold mesh on the SiO 2 (100nm)/Si substrate;

7)在金网、胶带和氮化硼上沉积厚度为200nm的镍电极;7) Depositing a nickel electrode with a thickness of 200nm on the gold mesh, adhesive tape and boron nitride;

8)沉积完电极后用镊子去除金网和胶带,在氮化硼上得到微电极。8) After depositing the electrodes, use tweezers to remove the gold mesh and tape, and obtain microelectrodes on boron nitride.

实施例5Example 5

1)将二硫化钨转移至SiO2(400nm)/Si基底上;1) transfer tungsten disulfide to SiO 2 (400nm)/Si substrate;

2)采用打孔器在胶带上进行打孔,获得带有小孔的胶带,小孔的直径为2mm;2) Use a puncher to punch holes on the adhesive tape to obtain an adhesive tape with small holes, and the diameter of the small holes is 2mm;

3)将钼网固定在步骤2)得到的带有小孔的胶带的粘性面上,得到带有钼网的胶带,其中钼网的中心点与小孔的中心点重合;3) the molybdenum mesh is fixed on the sticky surface of the adhesive tape with small holes obtained in step 2), and the adhesive tape with molybdenum mesh is obtained, wherein the central point of the molybdenum mesh coincides with the central point of the small hole;

4)将步骤3)得到的带有钼网的胶带的光滑面固定在聚二甲基硅氧烷薄膜上,聚二甲基硅氧烷薄膜的厚度为5mm;4) The smooth surface of the adhesive tape with molybdenum mesh obtained in step 3) is fixed on the polydimethylsiloxane film, and the thickness of the polydimethylsiloxane film is 5mm;

5)经步骤4)得到的带有钼网和胶带的聚二甲基硅氧烷薄膜安装在微观操作手上的载玻片上并利用微观操作手将其转移至步骤1)中SiO2(400nm)/Si基底上的二硫化钨的目标位置处并压紧;5) The polydimethylsiloxane film with molybdenum mesh and adhesive tape obtained in step 4) is installed on the glass slide on the micromanipulator and transferred to the SiO2 (400nm )/Si substrate on the target position of tungsten disulfide and compacted;

6)将微观操作手缓慢垂直抬起,移除聚二甲基硅氧烷薄膜,在SiO2(400nm)/Si基底上得到覆盖钼网的二硫化钨;6) Slowly lift the micromanipulator vertically, remove the polydimethylsiloxane film, and obtain tungsten disulfide covered with molybdenum mesh on the SiO 2 (400nm)/Si substrate;

7)在钼网和二硫化钨上沉积厚度为100nm的金电极;7) Depositing a gold electrode with a thickness of 100nm on the molybdenum mesh and tungsten disulfide;

8)沉积完电极后用镊子去除钼网,在二硫化钨上得到微电极。8) After the electrodes are deposited, the molybdenum mesh is removed with tweezers, and a microelectrode is obtained on the tungsten disulfide.

需要说明的是,本发明提供的图示仅以示意图的方式阐述本发明的基本构相,因此图示中仅显示与本发明中的有关组件而非按照实际实施时的组件数目、形状及尺寸绘制,其实际实施时各组件的型态、数量及比例可随意改变,且其组件布局型态也可能更为复杂。It should be noted that the diagrams provided by the present invention are only schematic diagrams illustrating the basic configuration of the present invention, so only the components related to the present invention are shown in the diagrams rather than the number, shape and size of the components in actual implementation Drawing, the type, quantity and proportion of each component can be changed at will during its actual implementation, and its component layout type may also be more complicated.

Claims (6)

1. the method preparing electrode in two-dimensional material, has following steps:
1) two-dimensional material (2) is transferred to SiO2In/Si substrate (1);
2) adopting card punch above to make a call to a diameter at adhesive tape (4) is the aperture of 1~2.5mm;
3) being bonded in the adhesive faces of adhesive tape (4) by load net (3), the central point of the central point and the aperture on adhesive tape (4) that wherein carry net (3) overlaps;
4) being fixed on the shiny surface of adhesive tape (4) by thin polymer film (5), the thickness of described thin polymer film (5) is 1~5mm;
5) by step 4) to be arranged on microtechnique microscope slide (6) on hand upper and utilize microtechnique hands that assembly is transferred to step 1 for the assembly of load net (3)/adhesive tape (4)/thin polymer film (5) that obtains) in the target location of two-dimensional material (2), make assembly and compress towards two-dimensional material (2) with the side of load net (3);
6) by step 5) described in microtechnique hands slowly vertically pick up, and removing polymer thin film (5), at SiO2/ Si substrate (1) obtains covering the two-dimensional material (2) of load net (3) and adhesive tape (4);
7) in load net (3) adhesive tape (4) and two-dimensional material (2), deposit the metal electrode of 50nm~200nm thickness;
8) remove load net (3) and adhesive tape (4) with tweezers, two-dimensional material (2) obtains microelectrode (7).
2. a kind of method preparing electrode in two-dimensional material according to claim 1, it is characterised in that described two-dimensional material (2) is Graphene, molybdenum bisuphide, tungsten disulfide, titanium dioxide, boron nitride or two-dimensional polymer;The two-dimensional of described two-dimensional material is 200nm × 500nm~10cm × 10cm, and thickness is 0.3nm~100 μm;Described SiO2SiO in/Si substrate (1)2The thickness of layer is 100~500nm;The described hole diameter on adhesive tape (4) is 2mm.
3. a kind of method preparing electrode in two-dimensional material according to claim 1, it is characterised in that described load net (3) is copper mesh, nickel screen, gold net, titanium net or molybdenum net.
4. a kind of method preparing electrode in two-dimensional material according to claim 1, it is characterized in that, step 4) described in thin polymer film (5) is fixed on the shiny surface of adhesive tape (4), be utilize adhesion between the shiny surface of adhesive tape (4) and thin polymer film (5) fixing;Described thin polymer film (5) is polydimethylsiloxanefilm film, pet film, polymethyl methacrylate film or polyvinyl chloride film;The thickness of thin polymer film (5) is 3mm.
5. a kind of method preparing electrode in two-dimensional material according to claim 1, it is characterised in that step 5) it is operated under an optical microscope.
6. according to the arbitrary a kind of described method preparing electrode in two-dimensional material of Claims 1 to 5, it is characterised in that step 7) described in metal electrode be gold electrode, platinum electrode, tungsten electrode or nickel electrode;The thickness of metal electrode is 100nm.
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CN110767377A (en) * 2019-10-15 2020-02-07 北京理工大学 Method for accurately manufacturing microelectrode by using oxygen-poor two-dimensional thin-layer material
CN113755827A (en) * 2021-08-23 2021-12-07 上海纳米技术及应用国家工程研究中心有限公司 Preparation method of ultrathin molybdenum disulfide crystal nanocomposite taking titanium mesh as substrate, product and application
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