CN103779400A - Composite electrode and preparation method thereof - Google Patents

Abstract

The invention provides a composite electrode, which comprises an electrode substrate, a micro structure array and a conductive film layer, wherein the micro structure array is arranged on the upper surface of the electrode substrate; and the conductive film is deposited on the surface of the electrode substrate provided with the micro structure array. Correspondingly, the invention further provides a preparation method for the composite electrode. According to the invention, a surface modification layer provided with the micro structure layer is prepared on the surface of the electrode substrate, thereby enabling the electrode surface to have the micro structure array, and being capable of effectively increasing the mutual contact area when the composite electrode and other materials are contacted or friction is generated therebetween.

Description

A kind of composite electrode and preparation method thereof

technical field

The invention relates to the field of semiconductor devices, in particular to a composite electrode and a preparation method thereof.

Background technique

In semiconductor devices, the surface structure of the electrode has an important impact on the performance of the device. Usually, the surface formed naturally when the electrode material is prepared is in contact with other parts of the device. Since the electrode surface formed in this way is a flat surface, it cannot meet the needs of the rough electrode surface. It is necessary to increase the contact area when the electrode contacts or rubs with other materials.

Contents of the invention

The invention provides a compound electrode with a simple structure and a microstructure array on its surface, comprising:

electrode substrate;

a microstructure array arranged on the upper surface of the electrode substrate;

A conductive thin film layer deposited on the surface of the electrode substrate provided with the microstructure array.

Preferably, the array of microstructures is selected from arrays of nanowires, nanotubes, nanoparticles, nanogrooves, microgrooves, nanocones, microcones, nanospheres and microsphere structures.

Preferably, the material of the microstructure array is selected from oxide semiconductor materials.

Preferably, the microstructure array is a ZnO nanowire array.

Preferably, the height of the microstructure array is between 200 nanometers and 2 micrometers.

Preferably, the conductive thin film layer is a metal thin film or a conductive oxide thin film.

Preferably, the metal is selected from Ag, Au, Cu, Al; the conductive oxide is selected from indium tin oxide.

Preferably, the thickness of the conductive film layer is between 50 nanometers and 400 nanometers.

Preferably, the electrode substrate is a conductor.

Preferably, the electrode substrate is a flexible substrate.

Preferably, the electrode substrate and the conductive film layer are made of the same material.

Correspondingly, the present invention also provides a method for preparing a composite electrode, comprising the steps of:

Provide electrode substrate;

setting a microstructure array on the upper surface of the electrode substrate;

A conductive thin film layer is deposited on the surface of the electrode substrate provided with the microstructure array.

The composite electrode provided by the invention and its preparation method have the following beneficial effects:

1. In the composite electrode provided by the present invention, a surface modification layer with a microstructure array is prepared on the surface of the electrode substrate, so that the electrode surface has a microstructure array, which effectively increases the surface area and surface energy of the electrode. When the composite electrode of the present invention contacts or rubs with other materials, it can effectively increase the contact area between each other, and can be applied to devices that need to increase the contact area when the electrode contacts or rubs with other materials, such as electrostatic pulse generators, gas sensors, etc. Sensors, fuel cells and other devices.

2. The nanostructured composite electrode can effectively increase the surface area and surface energy of the electrode, thereby significantly enhancing the surface effect of the composite electrode, which has important application value and scientific significance for the rapid realization of the miniaturization and intelligence of devices.

3. The composite electrode using a flexible material electrode substrate can be used as a flexible electrode on a flexible device.

4. The composite electrode preparation method provided by the present invention is to deposit a conductive thin film layer after setting a microstructure array on the surface of the electrode substrate. Each step can be precisely controlled according to design requirements. The method is simple and compatible with other semiconductor device preparation processes.

Description of drawings

The above and other objects, features and advantages of the present invention will be more clearly illustrated by the accompanying drawings. Like reference numerals designate like parts throughout the drawings. The drawings are not intentionally scaled according to the actual size, and the emphasis is on illustrating the gist of the present invention.

Fig. 1 is the structural representation of composite electrode of the present invention;

Fig. 2 is the preparation flowchart of composite electrode of the present invention;

Figure 3 and Figure 4 are schematic diagrams of the preparation process of the composite electrode.

Detailed ways

In semiconductor devices, the surface structure of the electrode has an important impact on the performance of the device. Usually, the surface formed naturally when the electrode material is prepared is in contact with other parts of the device. Contact or friction devices cannot meet the need to increase the contact area when the electrode contacts or rubs with other materials.

The invention provides a composite electrode whose surface can be a microstructure array. The technical solution is to deposit a microstructure array on the surface of a substrate as a template, and then deposit a conductive thin film layer material to obtain an electrode with a microstructure array modification layer on the surface.

Specifically, a microstructure array can be prepared on the surface of the electrode substrate by a chemical method, and then a conductive thin film layer can be deposited by a physical method to achieve the purpose of increasing the surface roughness of the electrode material. The inventor believes that when the nano-array structure obtained by the comprehensive chemical and physical modification method of the surface of the material is in contact with another material, these nano-arrays can be inserted into the other material to increase the friction and contact area. Studies have shown that additional friction and increased contact area can effectively increase the contact charge density. Therefore, the composite electrode of the present invention can be used in electrostatic nanogenerators, and at the same time as a friction layer of the generator, friction with other materials higher output power can be obtained. In devices such as gas sensors, fuel cells, etc., the composite electrode of the invention can increase the contact area between gas or liquid and the electrode surface, thereby obtaining higher output.

The specific implementation of the cantilever pulse generator of the present invention will be described in detail below in conjunction with the accompanying drawings.

Fig. 1 is the structure diagram of composite electrode of the present invention, and described composite electrode comprises electrode substrate 10, the microstructure array 20 that is arranged on the upper surface of electrode substrate 10, and the conductive film deposited on the surface of electrode substrate 10 that is provided with microstructure array 20 Layer 30.

In the present invention, the electrode substrate 10 is a substrate material selected according to actual needs, which is not particularly limited here, and may be a conductor, a semiconductor or an insulator. Preferably, the electrode substrate 10 is a conductor. More preferably, the conductive film layer 30 is made of the same material as the electrode substrate 10 .

The material of the electrode substrate 10 can be rigid, such as rigid substrates such as glass and aluminum plate, or flexible, such as PMMA film, copper foil, etc. Composite electrodes using flexible electrode substrates can be used in flexible devices.

In the present invention, the microstructure array 20 may be an array selected from nanowires, nanotubes, nanoparticles, nanogrooves, microgrooves, nanocones, microcones, nanospheres and microsphere structures, wherein each array unit The size is between 20 nanometers and 2 micrometers. The height of the microstructure array 20 is preferably between 200 nm and 2 microns.

In the present invention, the microstructure array 20 is equivalent to setting a microstructure template on the surface of the electrode substrate, so there is no special requirement for the material selection of the microstructure array, and it can be any conductor, semiconductor or insulator material that can be prepared into a microstructure of micron or nanometer size In the present invention, it is preferably an oxide semiconductor material, such as ZnO, SnO ₂ and other semiconductor materials, and more specifically, it can be a ZnO nanowire array. The microstructure array 20 can be a microstructure array obtained by directly growing on the surface of the electrode substrate by physical or chemical methods, or it can be obtained by placing a pre-prepared microstructure directly on the surface of the electrode substrate by using micro-nano processing technology. array.

The material of the conductive thin film layer 30 can be metal thin film material or conductive oxide material, the metal material is preferably Ag, Au, Cu, Al and other thin films, and the conductive oxide thin film is preferably indium tin oxide (ITO) thin film. In the composite electrode of the present invention, the conductive thin film layer 30 is deposited to form a thin film by conventional thin film preparation methods such as sputtering and evaporation. The deposition thickness of the conductive thin film layer 30 is preferably within a range of 50 nm to 400 nm.

Correspondingly, the present invention also provides a method for preparing a composite electrode. FIG. 2 is a flow chart for preparing a composite electrode, including:

Step S1, providing an electrode substrate.

In the present invention, the electrode substrate may be a flexible substrate or a rigid substrate. The electrode substrate may be a conductive substrate, or a semiconductor or insulator substrate according to actual device requirements.

Step S2, setting a microstructure array on the upper surface of the electrode substrate.

In the present invention, the material of the microstructure array can be selected from any conductor, semiconductor or insulator material that can be prepared into microstructures of micron or nanometer size.

Step S3, depositing a conductive film layer on the surface of the electrode substrate provided with the microstructure array.

In the present invention, the conductive thin film layer may be a metal or conductive oxide thin film layer, and the conductive thin film layer may be deposited by conventional thin film preparation methods such as sputtering and evaporation.

The preparation method of the composite electrode provided by the invention is to deposit a conductive thin film layer after setting the microstructure array on the surface of the electrode substrate, and each step can be precisely controlled according to the needs. The method is simple and compatible with other semiconductor device preparation processes. The preparation process of the composite electrode of the present invention will be described below with a specific example.

Select the beryllium-copper alloy sheet as the electrode substrate, see Fig. 3, adopt the hydrothermal synthesis method to prepare the ZnO nanowire array 20 on the upper surface of the beryllium-copper alloy electrode substrate 10, the ZnO nanowire is basically perpendicular to the surface of the electrode substrate 10, the ZnO nanometer Wire Length The length of the nanowire is about 500 nanometers.

Referring to Fig. 4, on the surface of the electrode substrate 10 prepared with the ZnO nanowire array 20, the Au film layer 30 with a thickness of about 200 nanometers is deposited by the magnetron sputtering method, and a modified layer with a microstructure array is obtained on the surface of the beryllium copper alloy. Preparation of composite electrodes.

The above descriptions are only preferred embodiments of the present invention, and do not limit the present invention in any form. Any person familiar with the art, without departing from the scope of the technical solution of the present invention, can use the methods and technical content disclosed above to make many possible changes and modifications to the technical solution of the present invention, or modify it into an equivalent of equivalent change Example. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention, which do not deviate from the technical solution of the present invention, still fall within the protection scope of the technical solution of the present invention.

Claims (12)

1. A composite electrode, characterized in that, comprising: electrode substrate; a microstructure array arranged on the upper surface of the electrode substrate; A conductive thin film layer deposited on the surface of the electrode substrate provided with the microstructure array. 2. The composite electrode according to claim 1, wherein the microstructure array is selected from the group consisting of nanowires, nanotubes, nanoparticles, nanogrooves, microgrooves, nanocones, microcones, nanospheres and microstructures. Array of spherical structures. 3. The composite electrode according to claim 1 or 2, characterized in that, the material of the microstructure array is selected from oxide semiconductor materials. 4. The composite electrode according to claim 3, wherein the microstructure array is a ZnO nanowire array. 5. The composite electrode according to any one of claims 1-4, characterized in that the height of the microstructure array is between 200 nanometers and 2 micrometers. 6. The composite electrode according to any one of claims 1-5, characterized in that, the conductive thin film layer is a metal thin film or a conductive oxide thin film. 7. The composite electrode according to claim 6, wherein the metal is selected from Ag, Au, Cu, Al; and the conductive oxide is selected from indium tin oxide. 8. The composite electrode according to any one of claims 1-7, characterized in that, the thickness of the conductive film layer is between 50 nanometers and 400 nanometers. 9. The composite electrode according to any one of claims 1-8, wherein the electrode substrate is a conductor. 10. The composite electrode according to any one of claims 1-9, wherein the electrode substrate is a flexible substrate. 11. The composite electrode according to any one of claims 1-10, characterized in that the electrode substrate and the conductive film layer are made of the same material. 12. A composite electrode preparation method, characterized in that, comprising the steps of: Provide electrode substrate; setting a microstructure array on the upper surface of the electrode substrate; A conductive thin film layer is deposited on the surface of the electrode substrate provided with the microstructure array.

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