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CN105789298A - 横向绝缘栅双极型晶体管及其制造方法 - Google Patents

横向绝缘栅双极型晶体管及其制造方法 Download PDF

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CN105789298A
CN105789298A CN201410799646.0A CN201410799646A CN105789298A CN 105789298 A CN105789298 A CN 105789298A CN 201410799646 A CN201410799646 A CN 201410799646A CN 105789298 A CN105789298 A CN 105789298A
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bipolar transistor
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gate bipolar
lateral insulated
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CN105789298B (zh
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祁树坤
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CSMC Technologies Corp
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Wuxi CSMC Semiconductor Co Ltd
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Priority to PCT/CN2015/090914 priority patent/WO2016095585A1/zh
Priority to EP15869096.6A priority patent/EP3240042A4/en
Priority to US15/537,753 priority patent/US10084073B2/en
Priority to JP2017533196A priority patent/JP6437657B2/ja
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Abstract

本发明涉及一种横向绝缘栅双极型晶体管，包括衬底、衬底上的阳极端和阴极端，以及位于阳极端与阴极端之间的漂移区和栅极，阳极端包括衬底上的P型埋层、P型埋层上的N型缓冲区以及N型缓冲区表面的P+集电区；横向绝缘栅双极型晶体管还包括与阳极端邻接的沟槽栅极，沟槽栅极从N型缓冲区和P+集电区表面贯穿至P型埋层，沟槽栅极包括沟槽内表面的氧化层和填充于氧化层内的多晶硅。本发明还涉及一种横向绝缘栅双极型晶体管的制造方法。本发明当LIGBT关断时，集电极的P+区与沟槽栅极为反向偏置，寄生PMOS开启并处于放大状态，开始抽取漂移区中残余的少子空穴，通过栅氧的厚度可控制器件耐压，并保证较快的开关速度，达到快速关断的目的。

Description

横向绝缘栅双极型晶体管及其制造方法
技术领域
本发明涉及半导体工艺，特别是涉及一种横向绝缘栅双极型晶体管，还涉及一种横向绝缘栅双极型晶体管的制造方法。
背景技术
横向绝缘栅双极型晶体管(LateralInsulated-GateBipolarTransistor,LIGBT)常用于高压功率驱动集成电路的输出级。在电导调制效应带来低导通压降的同时，会伴随漂移区中由于残留少子导致的关断时间偏长的问题，因此如何在开态压降和关断时间之间取得平衡，成为LIGBT器件持续改进的方向。
发明内容
基于此，有必要提供一种能够快速关断的横向绝缘栅双极型晶体管。
一种横向绝缘栅双极型晶体管，包括衬底、衬底上的阳极端和阴极端，以及位于阳极端与阴极端之间的漂移区和栅极，所述阳极端包括衬底上的P型埋层、P型埋层上的N型缓冲区以及N型缓冲区表面的P+集电区；所述横向绝缘栅双极型晶体管还包括与阳极端邻接的沟槽栅极，所述沟槽栅极从N型缓冲区和P+集电区表面贯穿至所述P型埋层，所述沟槽栅极包括沟槽内表面的氧化层和填充于所述氧化层内的多晶硅。
在其中一个实施例中，所述P型埋层和N型缓冲区之间被所述漂移区分隔开。
在其中一个实施例中，所述横向绝缘栅双极型晶体管为绝缘体上硅型横向绝缘栅双极型晶体管，所述横向绝缘栅双极型晶体管还包括位于衬底和漂移区之间的埋氧层，所述P型埋层设于所述埋氧层上，所述衬底为P型衬底，所述漂移区为N型漂移区。
在其中一个实施例中，所述阴极端包括衬底上的P型体区，以及P型体区表面的P+区和N+区。
在其中一个实施例中，所述阴极端还包括阴极金属，所述栅极包括栅氧化层和栅氧化层上的多晶硅栅。
还有必要提供一种横向绝缘栅双极型晶体管的制造方法。
一种横向绝缘栅双极型晶体管的制造方法，包括下列步骤：提供形成有漂移区的衬底；高能离子注入P型离子在漂移区内形成P型埋层；在所述P型埋层上方注入N型离子，形成N型缓冲区；热推阱使注入的P型离子和N型离子扩散；注入P型离子并热退火形成P型体区；光刻并刻蚀形成自所述N型缓冲区表面贯穿至所述P型埋层的深槽；在所述深槽的内表面形成氧化层；在所述氧化层内填充多晶硅；离子注入形成N型缓冲区表面的P+集电区，以及所述P型体区表面的P+区和N+区，所述P+集电区与所述氧化层接触。
在其中一个实施例中，所述光刻并刻蚀形成自所述N型缓冲区表面贯穿至所述P型埋层的深槽的步骤是采用反应离子刻蚀工艺进行刻蚀。
在其中一个实施例中，所述在所述深槽的内表面形成氧化层的步骤是通过热氧化形成栅氧层，所述在所述氧化层内填充多晶硅的步骤是通过淀积工艺形成多晶硅栅。
在其中一个实施例中，所述提供形成有漂移区的衬底的步骤中，漂移区与衬底之间还形成有埋氧层；所述高能离子注入P型离子在漂移区内形成P型埋层的步骤中，P型埋层是形成于所述埋氧层上。
在其中一个实施例中，所述高能离子注入P型离子在漂移区内形成P型埋层的步骤中，注入的离子为硼离子。
上述横向绝缘栅双极型晶体管，当LIGBT关断时，集电极的P+区与沟槽栅极为反向偏置，寄生PMOS开启并处于放大状态，开始抽取漂移区中残余的少子空穴，通过栅氧的厚度可控制器件耐压，并保证较快的开关速度，达到快速关断的目的。
附图说明
通过附图中所示的本发明的优选实施例的更具体说明，本发明的上述及其它目的、特征和优势将变得更加清晰。在全部附图中相同的附图标记指示相同的部分，且并未刻意按实际尺寸等比例缩放绘制附图，重点在于示出本发明的主旨。
图1是一实施例中横向绝缘栅双极型晶体管的截面示意图；
图2一实施例中横向绝缘栅双极型晶体管的制造方法的流程图。
具体实施方式
为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的首选实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容更加透彻全面。
需要说明的是，当元件被称为“固定于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“竖直的”、“水平的”、“上”、“下”、“左”、“右”以及类似的表述只是为了说明的目的。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。
图1是一实施例中横向绝缘栅双极型晶体管的截面示意图，横向绝缘栅双极型晶体管包括衬底10、衬底10上的阳极端和阴极端，位于阳极端与阴极端之间的漂移区30和栅极61，以及与阳极端邻接的沟槽栅极。阳极端包括衬底上的P型埋层52、P型埋层52上的N型缓冲区54以及N型缓冲区54表面的P+集电区56。阴极端包括衬底10上的P型体区42，P型体区42表面的P+区44和N+区46，以及作为发射极的电极的阴极金属41。栅极61包括栅氧化层和多晶硅栅。沟槽栅极从N型缓冲区54和P+集电区56表面贯穿至P型埋层52，沟槽栅极包括槽内表面的氧化层51和填充于氧化层51内的多晶硅53。
上述横向绝缘栅双极型晶体管，通过P+集电区56、N型缓冲区54、P型埋层52以及氧化层51和多晶硅53形成纵向的PMOSFET(其中氧化层51作为栅氧、多晶硅53作为多晶硅栅)。当横向绝缘栅双极型晶体管的栅极61正偏时，电子电流由发射极的N+区46穿过P型体区42的沟道先后进入漂移区30、N型缓冲区54。随着阳极端P+区56正偏，空穴由集电极注入漂移区30，并由于电子的吸引进入P型体区42，横向绝缘栅双极型晶体管进入工作状态。此时寄生的纵向PMOSFET由于沟槽栅极与阳极端相连，故处于关断状态。
当横向绝缘栅双极型晶体管关断时，集电极的P+区56与沟槽栅极为反向偏置，纵向PMOSFET开启并处于放大状态，开始抽取漂移区30中残余的少子空穴。通过调整栅氧(氧化层51)的厚度可控制器件耐压，并保证较快的开关速度，达到快速关断的目的。
在图1所示实施例中，N型缓冲区54的深度不足以到达P型埋层52，故P型埋层52和N型缓冲区54之间被漂移区30分隔开。
绝缘体上硅(SOI)技术正在HVIC及SPIC应用领域体现出愈来愈大的重要性，而IGBT器件则由于高输入阻抗及电导调制效应带来的低导通电阻特性，在功率器件应用领域中日益占据重要地位。相比于体硅结隔离型器件，SOI的LIGBT器件由于槽式隔离带来的低漏电、低开态电阻、高输入阻抗、高封装密度、快速开关、降噪效果显著及高温工作下的可行性，在汽车电子、家用电子及通信和工业应用上取得较为广泛的应用。图1所示的LIGBT为绝缘体上硅型横向绝缘栅双极型晶体管(SOI-LIGBT)，包括位于衬底10和漂移区30之间的埋氧层20，其中衬底10为P型衬底，漂移区30为N型漂移区。
参见图2，本发明还提供一种横向绝缘栅双极型晶体管的制造方法，用于制备上述横向绝缘栅双极型晶体管。包括下列步骤：
S210，提供形成有漂移区的衬底。
在本实施例中，是提供形成有衬底、衬底上的埋氧层及埋氧层上的漂移区上的硅片。
S220，高能离子注入P型离子在漂移区内形成P型埋层。
在阳极端进行注入，由于对注入深度有较高的要求，因此需要采用高能离子注入的方式。在本实施例中注入的是硼离子。
S230，在P型埋层上方注入N型离子，形成N型缓冲区。
S240，热推阱使注入的P型离子和N型离子扩散。
扩散后形成纵向的N型缓冲区和P型埋层的结，P型埋层形成于埋氧层上。
S250，注入P型离子并热退火形成P型体区。
在阴极端注入形成P型体区，作为LIGBT的基区。
S260，光刻并刻蚀形成自N型缓冲区表面贯穿至P型埋层的深槽。
在本实施例中，是采用反应离子刻蚀(RIE)工艺进行刻蚀。
S270，在深槽的内表面形成氧化层。
在本实施例中，是通过热氧化在深槽的侧壁和底面均形成一层氧化层作为PMOSFET的栅氧。
S280，在氧化层内填充多晶硅。
在本实施例中，是通过淀积工艺形成深槽内的多晶硅栅作为PMOS的栅极，以及形成阴极端与阳极端之间的多晶硅栅作为LIGBT的栅极。
S290，离子注入形成N型缓冲区表面的P+集电区，以及P型体区表面的P+区和N+区。
形成发射极、集电极及PMOSFET的漏极，其中P+集电区与沟槽内的氧化层接触，同时作为PMOSFET的漏极。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

1.一种横向绝缘栅双极型晶体管，包括衬底、衬底上的阳极端和阴极端，以及位于阳极端与阴极端之间的漂移区和栅极，其特征在于，所述阳极端包括衬底上的P型埋层、P型埋层上的N型缓冲区以及N型缓冲区表面的P+集电区；所述横向绝缘栅双极型晶体管还包括与阳极端邻接的沟槽栅极，所述沟槽栅极从N型缓冲区和P+集电区表面贯穿至所述P型埋层，所述沟槽栅极包括沟槽内表面的氧化层和填充于所述氧化层内的多晶硅。
2.根据权利要求1所述的横向绝缘栅双极型晶体管，其特征在于，所述P型埋层和N型缓冲区之间被所述漂移区分隔开。
3.根据权利要求1所述的横向绝缘栅双极型晶体管，其特征在于，所述横向绝缘栅双极型晶体管为绝缘体上硅型横向绝缘栅双极型晶体管，所述横向绝缘栅双极型晶体管还包括位于衬底和漂移区之间的埋氧层，所述P型埋层设于所述埋氧层上，所述衬底为P型衬底，所述漂移区为N型漂移区。
4.根据权利要求1所述的横向绝缘栅双极型晶体管，其特征在于，所述阴极端包括衬底上的P型体区，以及P型体区表面的P+区和N+区。
5.根据权利要求4所述的横向绝缘栅双极型晶体管，其特征在于，所述阴极端还包括阴极金属，所述栅极包括栅氧化层和栅氧化层上的多晶硅栅。
6.一种横向绝缘栅双极型晶体管的制造方法，包括下列步骤：
提供形成有漂移区的衬底；
高能离子注入P型离子在漂移区内形成P型埋层；
在所述P型埋层上方注入N型离子，形成N型缓冲区；
热推阱使注入的P型离子和N型离子扩散；
注入P型离子并热退火形成P型体区；
光刻并刻蚀形成自所述N型缓冲区表面贯穿至所述P型埋层的深槽；
在所述深槽的内表面形成氧化层；
在所述氧化层内填充多晶硅；
离子注入形成N型缓冲区表面的P+集电区，以及所述P型体区表面的P+区和N+区，所述P+集电区与所述氧化层接触。
7.根据权利要求6所述的横向绝缘栅双极型晶体管的制造方法，其特征在于，所述光刻并刻蚀形成自所述N型缓冲区表面贯穿至所述P型埋层的深槽的步骤是采用反应离子刻蚀工艺进行刻蚀。
8.根据权利要求6所述的横向绝缘栅双极型晶体管的制造方法，其特征在于，所述在所述深槽的内表面形成氧化层的步骤是通过热氧化形成栅氧层，所述在所述氧化层内填充多晶硅的步骤是通过淀积工艺形成多晶硅栅。
9.根据权利要求6所述的横向绝缘栅双极型晶体管的制造方法，其特征在于，所述提供形成有漂移区的衬底的步骤中，漂移区与衬底之间还形成有埋氧层；所述高能离子注入P型离子在漂移区内形成P型埋层的步骤中，P型埋层是形成于所述埋氧层上。
10.根据权利要求6所述的横向绝缘栅双极型晶体管的制造方法，其特征在于，所述高能离子注入P型离子在漂移区内形成P型埋层的步骤中，注入的离子为硼离子。
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