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CN105763047B - A kind of all-wave inductive current sample circuit - Google Patents

A kind of all-wave inductive current sample circuit Download PDF

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Publication number
CN105763047B
CN105763047B CN201610131510.1A CN201610131510A CN105763047B CN 105763047 B CN105763047 B CN 105763047B CN 201610131510 A CN201610131510 A CN 201610131510A CN 105763047 B CN105763047 B CN 105763047B
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sampling
nmos transistor
current
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drain
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CN105763047A (en
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郑彦祺
祝磊
陈彪
郭建平
陈弟虎
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Tuoer Microelectronics Co ltd
Xi'an Tuoer Microelectronics Co ltd
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Sun Yat Sen University
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/02Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/32Means for protecting converters other than automatic disconnection

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)

Abstract

本发明公开了一种全波电感电流采样电路,包括系统功率级电路、比例MOS管电流采样电路、电压转电流及电流求和电路和采样直流校正及采样积分电路,所述系统功率级电路的第一输出端通过比例MOS管电流采样电路进而连接至采样直流校正及采样积分电路的第一输入端,所述系统功率级电路的第二输出端通过电压转电流及电流求和电路进而连接至采样直流校正及采样积分电路的第二输入端。本发明通过系统功率级电路、比例MOS管电流采样电路、电压转电流及电流求和电路和采样直流校正及采样积分电路能实现精确的全波电感电流采样,而且能得到采样信号连续,有效避免了出现毛刺的问题。本发明可广泛应用于电子电路领域中。

The invention discloses a full-wave inductor current sampling circuit, which includes a system power stage circuit, a proportional MOS tube current sampling circuit, a voltage-to-current and current summation circuit, and a sampling DC correction and sampling integration circuit. The power stage circuit of the system The first output end is further connected to the first input end of the sampling DC correction and sampling integration circuit through the proportional MOS tube current sampling circuit, and the second output end of the system power stage circuit is further connected to the voltage-to-current and current summation circuit. The second input end of the sampling DC correction and sampling integration circuit. The present invention can realize accurate full-wave inductor current sampling through the system power level circuit, proportional MOS tube current sampling circuit, voltage-to-current and current summation circuit, sampling DC correction and sampling integration circuit, and can obtain continuous sampling signals, effectively avoiding There is a glitch problem. The invention can be widely applied in the field of electronic circuits.

Description

一种全波电感电流采样电路A full-wave inductor current sampling circuit

技术领域technical field

本发明涉及电子电路技术领域,尤其涉及一种全波电感电流采样电路。The invention relates to the technical field of electronic circuits, in particular to a full-wave inductor current sampling circuit.

背景技术Background technique

单电感多输出(Single-Inductor Multiple-Output,SIMO)DC-DC转换器是一种将电感分时复用的新型DC-DC转换器结构,系统只需要一个电感,就能提供多路独立的输出。因此大大减少了片外电感的数目,减小了转换器的体积,从而降低了成本。近年来提出的自动升降压型单电感多输出DC-DC转换器更是拓展了此类转换器的应用范围。Single-inductor multiple-output (Single-Inductor Multiple-Output, SIMO) DC-DC converter is a new type of DC-DC converter structure in which inductors are time-division multiplexed. The system only needs one inductor to provide multiple independent output. Therefore, the number of off-chip inductors is greatly reduced, the volume of the converter is reduced, and the cost is reduced. In recent years, the automatic buck-boost single-inductance multi-output DC-DC converter has expanded the application range of this type of converter.

自动升降型单电感多输出DC-DC变换器的功率级电路如图1所示,该功率级电路包括输入级开关组和输出级开关组,其中输入级开关组包括一个PMOS管Mip和一个NMOS管Min,输出级开关组包括一个NMOS管Mon和n个PMOS管Mop1~Mopn。转换器工作时,控制信号Go1~Gon控制输出级开关组依次导通,并且不会发生同时导通的情况。The power stage circuit of the automatic lifting type single-inductance multi-output DC-DC converter is shown in Figure 1. The power stage circuit includes an input-stage switch group and an output-stage switch group. The input-stage switch group includes a PMOS transistor M ip and a The NMOS transistor M in , the output stage switch group includes an NMOS transistor M on and n PMOS transistors M op1 -M opn . When the converter is working, the control signals G o1 ˜G on control the switch groups of the output stage to be turned on sequentially, and simultaneous conduction will not occur.

目前使用最为广泛的单电感多输出DC-DC变换器的控制方法为依序供能控制法(Ordered Power Distributive Control,OPDC),即在一个周期之内,对电感进行一次充电,然后依照一定的顺序给各个输出通道放电。为了实现电流模控制、过流保护以及探测不连续导通模式(Discontinuous Conduction Mode,DCM),我们必须在整个工作周期内精确探测电感电流。目前比较常用的、采样精度较高的电感电流采样电路为比例MOS管电感电流采样电路。At present, the most widely used control method of single-inductor multiple-output DC-DC converter is Ordered Power Distributive Control (OPDC), that is, within one cycle, the inductor is charged once, and then according to a certain Discharge each output channel sequentially. In order to implement current-mode control, over-current protection, and detect discontinuous conduction mode (Discontinuous Conduction Mode, DCM), we must accurately sense the inductor current during the entire duty cycle. At present, the commonly used inductor current sampling circuit with high sampling accuracy is the proportional MOS tube inductor current sampling circuit.

图2所示的是半波比例MOS管电感电流采样电路,其中功率开关管Mip的宽长比是采样管Mpsen的宽长比的K倍。在功率开关管Mip导通(即功率开关管Min截止)时,开关S1断开,开关S2闭合,VX1被接到运放Amp1的反相输入端,运放Amp1和调整管Mn使得运放的同相输入端和反相输入端电位相等,此时即有功率开关管Mip和采样管Mpsen的栅极、源极、漏极电位都分别相等,而功率开关管Mip的宽长比是采样管Mpsen的宽长比的K倍,因此流过采样管Mpsen的电流即为功率开关管Mip电流(在此期间等于电感电流)的1/K,然后再通过采样电阻Rsen将采样电流转换成电压Vsen。它们之间的关系是在功率开关管Min导通(即功率开关管Mip截止)时,开关S2断开,开关S1闭合,Vin被接到运放Amp1的反相输入端,因此运放的输出被拉低,调整管Mn截止,Vsen为0,此时无法探测电感电流信息,因此为半波电感电流采样。这种比例MOS管电流采样电路的优点是电路结构简单,采样精度高,功耗相对较小,可工作在10MHz以上的开关频率电路中;缺点是只能半波电感电流采样,无法运用于自动升降压型单电感多输出DC-DC转换器中。Figure 2 shows a half-wave proportional MOS tube inductor current sampling circuit, in which the width-to-length ratio of the power switch tube M ip is K times the width-to-length ratio of the sampling tube M psen . When the power switch M ip is turned on (that is, the power switch M in is cut off), the switch S 1 is disconnected, the switch S 2 is closed, V X1 is connected to the inverting input terminal of the operational amplifier Amp1, and the operational amplifier Amp1 and the adjustment tube M n makes the potentials of the non-inverting input terminal and the inverting input terminal of the operational amplifier equal, at this time, the potentials of the gate, source and drain of the power switch M ip and the sampling tube M psen are respectively equal, and the power switch M The width-to-length ratio of ip is K times the width-to-length ratio of the sampling tube M psen , so the current flowing through the sampling tube M psen is 1/K of the current of the power switch tube M ip (equal to the inductor current during this period), and then The sampling current is converted into a voltage V sen through the sampling resistor R sen . The relationship between them is When the power switch M in is turned on (that is, the power switch M ip is cut off), the switch S 2 is turned off, the switch S 1 is closed, and V in is connected to the inverting input terminal of the operational amplifier Amp1, so the output of the operational amplifier is When it is pulled low, the adjustment tube M n is cut off, and V sen is 0. At this time, the inductor current information cannot be detected, so it is a half-wave inductor current sampling. The advantage of this proportional MOS tube current sampling circuit is that the circuit structure is simple, the sampling accuracy is high, the power consumption is relatively small, and it can work in a switching frequency circuit above 10MHz; the disadvantage is that it can only sample the half-wave inductor current and cannot be used in automatic Buck-boost single inductor multiple output DC-DC converter.

图3所示的是全波比例MOS管电感电流采样电路,该电路的实质是将两个半波采样电路相结合,两个半波采样电路分别探测功率开关管Mip导通期间和功率开关管Min导通期间的电感电流,然后将探测到的电流通过同一个采样电阻Rsen将采样电流转换成电压Vsen。这种方法得到的虽然是全波电感电流信息,但是仍然存在不少缺点。第一,由于在功率开关管Mip导通和功率开关管Min导通之间存在死区时间以及开关S1~S4动作,导致探测到的电流波形在切换时存在很多毛刺,如图4所示,这会造成系统误触发。第二,由于存在电路不匹配的问题,导致探测到的电流波形在切换时会发生突变(如图4中的虚线椭圆内所示,采样电压Vsen发生突变),而实际上电感电流是不可能发生突变的,这种突变可能会引起系统的不稳定。Figure 3 shows the full-wave proportional MOS tube inductor current sampling circuit. The essence of this circuit is to combine two half-wave sampling circuits. The two half-wave sampling circuits respectively detect the conduction period of the power switch tube M ip and the power switch The inductor current during the turn-on period of the tube Min , and then the detected current is converted into a voltage V sen through the same sampling resistor R sen . Although this method obtains full-wave inductor current information, there are still many shortcomings. First, due to the dead time between the conduction of the power switch M ip and the conduction of the power switch M in and the action of the switches S 1 ~ S 4 , there are many glitches in the detected current waveform during switching, as shown in the figure 4, this can cause false triggering of the system. Second, due to the problem of circuit mismatch, the detected current waveform will change suddenly when switching (as shown in the dotted ellipse in Figure 4, the sampling voltage V sen will change suddenly), but in fact the inductor current is not Mutations may occur, which may cause system instability.

发明内容Contents of the invention

为了解决上述技术问题,本发明的目的是提供一种能连续采样,且采样精度较高的一种全波电感电流采样电路。In order to solve the above technical problems, the object of the present invention is to provide a full-wave inductor current sampling circuit capable of continuous sampling and high sampling accuracy.

本发明所采取的技术方案是:The technical scheme that the present invention takes is:

一种全波电感电流采样电路,包括系统功率级电路、比例MOS管电流采样电路、电压转电流及电流求和电路和采样直流校正及采样积分电路,所述系统功率级电路的第一输出端通过比例MOS管电流采样电路进而连接至采样直流校正及采样积分电路的第一输入端,所述系统功率级电路的第二输出端通过电压转电流及电流求和电路进而连接至采样直流校正及采样积分电路的第二输入端。A full-wave inductor current sampling circuit, including a system power stage circuit, a proportional MOS tube current sampling circuit, a voltage-to-current and current summation circuit, and a sampling DC correction and sampling integration circuit, the first output terminal of the system power stage circuit The proportional MOS tube current sampling circuit is further connected to the first input terminal of the sampling DC correction and sampling integration circuit, and the second output terminal of the system power stage circuit is further connected to the sampling DC correction and the sampling integration circuit through the voltage-to-current and current summation circuit. The second input terminal of the sampling integration circuit.

作为本发明的进一步改进,所述系统功率级电路包括第一PMOS管、第一NMOS管、第二NMOS管和电感,所述第一PMOS管的源极分别与比例MOS管电流采样电路的输入端和电压输入端连接,所述第一PMOS管的漏极分别与比例MOS管电流采样电路的第二输入端、第一NMOS管的漏极和电压转电流及电流求和电路的输入端连接,所述第一PMOS管的漏极通过电感连接至第二NMOS管的漏极,所述第二NMOS管的漏极与电压转电流及电流求和电路的第三输入端相连接。As a further improvement of the present invention, the system power stage circuit includes a first PMOS transistor, a first NMOS transistor, a second NMOS transistor and an inductor, and the source of the first PMOS transistor is connected to the input of the proportional MOS transistor current sampling circuit respectively. terminal is connected to the voltage input terminal, and the drain of the first PMOS tube is connected to the second input terminal of the proportional MOS tube current sampling circuit, the drain of the first NMOS tube, and the input terminal of the voltage-to-current and current summation circuit respectively The drain of the first PMOS transistor is connected to the drain of the second NMOS transistor through an inductor, and the drain of the second NMOS transistor is connected to the third input end of the voltage-to-current and current summation circuit.

作为本发明的进一步改进,所述电压转电流及电流求和电路包括第二PMOS管、第三PMOS管、第四PMOS管、第五PMOS管、第三NMOS管、第四NMOS管、第五NMOS管、第六NMOS管、第一电阻、第二电阻、第一运算放大器和第二运算放大器,所述第二PMOS管的源极、第三PMOS管的源极、第四PMOS管的源极和第五PMOS管的源极均连接至电源端,所述第二PMOS管的栅极分别与第二PMOS管的漏极、第三NMOS管的漏极和第三PMOS管的栅极连接,所述第五PMOS管的栅极分别与第五PMOS管的漏极、第四NMOS管的漏极和第四PMOS管的栅极连接,所述第三PMOS管的漏极分别与采样直流校正及采样积分电路的第二输入端和第五NMOS管的漏极连接,所述第四PMOS管的漏极分别与第六NMOS管的漏极、第六NMOS管的栅极和第五NMOS管的栅极连接,所述第三NMOS管的栅极与第一运算放大器的输出端连接,所述第三NMOS管的源极分别与第一电阻的第一端和第一运算器的反相输入端连接,所述第一运算器的同相输入端与第一PMOS管的漏极连接,所述第四NMOS管的栅极与第二运算放大器的输出端连接,所述第四NMOS管的源极分别与第二电阻的第一端和第二运算器的反相输入端连接,所述第二运算器的同相输入端与第二NMOS管的漏极连接。As a further improvement of the present invention, the voltage-to-current and current summation circuit includes a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a fifth PMOS transistor, a third NMOS transistor, a fourth NMOS transistor, a fifth An NMOS transistor, a sixth NMOS transistor, a first resistor, a second resistor, a first operational amplifier, and a second operational amplifier, the source of the second PMOS transistor, the source of the third PMOS transistor, and the source of the fourth PMOS transistor and the source of the fifth PMOS transistor are connected to the power supply terminal, and the gate of the second PMOS transistor is respectively connected to the drain of the second PMOS transistor, the drain of the third NMOS transistor, and the gate of the third PMOS transistor , the gate of the fifth PMOS transistor is respectively connected to the drain of the fifth PMOS transistor, the drain of the fourth NMOS transistor and the gate of the fourth PMOS transistor, and the drain of the third PMOS transistor is respectively connected to the sampling DC The second input terminal of the correction and sampling integration circuit is connected to the drain of the fifth NMOS transistor, and the drain of the fourth PMOS transistor is respectively connected to the drain of the sixth NMOS transistor, the gate of the sixth NMOS transistor, and the fifth NMOS transistor. The gate of the transistor is connected, the gate of the third NMOS transistor is connected to the output terminal of the first operational amplifier, and the source of the third NMOS transistor is respectively connected to the first end of the first resistor and the opposite of the first operator. The non-inverting input terminal of the first operator is connected to the drain of the first PMOS transistor, the gate of the fourth NMOS transistor is connected to the output terminal of the second operational amplifier, and the fourth NMOS transistor The source of the second resistor is respectively connected to the first terminal of the second resistor and the inverting input terminal of the second operator, and the non-inverting input terminal of the second operator is connected to the drain of the second NMOS transistor.

作为本发明的进一步改进,所述采样直流校正及采样积分电路包括缓冲器、开关和采样积分电容,所述比例MOS管电流采样电路的输出端与缓冲器的输入端连接,所述缓冲器的输出端通过开关连接至采样积分电容的第一端,所述采样积分电容的第一端连接至第三PMOS管的漏极。As a further improvement of the present invention, the sampling DC correction and sampling integration circuit includes a buffer, a switch and a sampling integration capacitor, the output end of the proportional MOS tube current sampling circuit is connected to the input end of the buffer, and the output end of the buffer is The output end is connected to the first end of the sampling integration capacitor through the switch, and the first end of the sampling integration capacitor is connected to the drain of the third PMOS transistor.

作为本发明的进一步改进,所述采样直流校正及采样积分电路包括第三运算放大器、采样积分电容、第一电容、第二电容、第三电阻、第四电阻、第六PMOS管、第七PMOS管、第八PMOS管、第七NMOS管、第八NMOS管、第九NMOS管、第十NMOS管和第十一NMOS管,所述比例MOS管电流采样电路的输出端连接至第三运算放大器的反相输入端,所述第三运算放大器的输出端分别与第一电容的第一端和第七NMOS管的栅极连接,所述第三运算放大器的输出端通过第三电阻连接至第二电容的第一端,所述第六PMOS管的源极、第七PMOS管的源极和第八PMOS管的源极均连接至电源端,所述第六PMOS管的栅极分别与第六PMOS管的漏极和第七NMOS管的漏极连接,所述第七PMOS管的栅极分别与第七PMOS管的漏极、第八PMOS管的栅极和第八NMOS管的漏极相连接,所述第七NMOS管的源极分别与第四电阻的第一端和第九NMOS管的漏极连接,所述第八NMOS管的源极分别与第四电阻的第二端和第十NMOS管的漏极连接,所述第九NMOS管的栅极、第十NMOS管的栅极和第十一NMOS管的栅极均连接至偏置电压端,所述第三运算放大器的同相输入端分别与第八PMOS管的漏极、第十一NMOS管的漏极、采样积分电容的第一端和第三PMOS管的漏极相连接。As a further improvement of the present invention, the sampling DC correction and sampling integration circuit includes a third operational amplifier, a sampling integration capacitor, a first capacitor, a second capacitor, a third resistor, a fourth resistor, a sixth PMOS transistor, and a seventh PMOS transistor. tube, the eighth PMOS tube, the seventh NMOS tube, the eighth NMOS tube, the ninth NMOS tube, the tenth NMOS tube and the eleventh NMOS tube, the output end of the proportional MOS tube current sampling circuit is connected to the third operational amplifier The inverting input terminal of the third operational amplifier, the output terminal of the third operational amplifier is respectively connected to the first terminal of the first capacitor and the gate of the seventh NMOS transistor, and the output terminal of the third operational amplifier is connected to the first terminal through the third resistor. The first end of the second capacitor, the source of the sixth PMOS transistor, the source of the seventh PMOS transistor and the source of the eighth PMOS transistor are all connected to the power supply terminal, and the gate of the sixth PMOS transistor is connected to the first PMOS transistor respectively. The drains of the six PMOS transistors are connected to the drains of the seventh NMOS transistors, and the gates of the seventh PMOS transistors are respectively connected to the drains of the seventh PMOS transistors, the gates of the eighth PMOS transistors, and the drains of the eighth NMOS transistors. The source of the seventh NMOS transistor is respectively connected to the first end of the fourth resistor and the drain of the ninth NMOS transistor, and the source of the eighth NMOS transistor is respectively connected to the second end of the fourth resistor and the drain of the ninth NMOS transistor. The drain of the tenth NMOS transistor is connected, the grid of the ninth NMOS transistor, the grid of the tenth NMOS transistor and the grid of the eleventh NMOS transistor are all connected to the bias voltage terminal, and the gate of the third operational amplifier The non-inverting input end is respectively connected with the drain of the eighth PMOS transistor, the drain of the eleventh NMOS transistor, the first terminal of the sampling integration capacitor and the drain of the third PMOS transistor.

本发明的有益效果是:The beneficial effects of the present invention are:

本发明一种全波电感电流采样电路通过系统功率级电路、比例MOS管电流采样电路、电压转电流及电流求和电路和采样直流校正及采样积分电路能实现精确的全波电感电流采样,而且能得到采样信号连续,有效避免了出现毛刺的问题,可用于单电感多输出DC-DC转换器中的精确控制以及过流保护、非连续电感电流模式探测等。A full-wave inductor current sampling circuit of the present invention can realize accurate full-wave inductor current sampling through a system power stage circuit, a proportional MOS tube current sampling circuit, a voltage-to-current and current summation circuit, and a sampling DC correction and sampling integration circuit, and The continuous sampling signal can be obtained, effectively avoiding the problem of glitches, and can be used for precise control, overcurrent protection, and detection of discontinuous inductor current modes in single-inductor multi-output DC-DC converters.

附图说明Description of drawings

下面结合附图对本发明的具体实施方式作进一步说明:The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

图1是一种自动升降型单电感多输出DC-DC变换器的功率级电路图;Figure 1 is a power stage circuit diagram of an automatic lifting type single-inductance multi-output DC-DC converter;

图2是半波比例MOS管电感电流采样电路原理图;Figure 2 is a schematic diagram of a half-wave proportional MOS tube inductance current sampling circuit;

图3是全波比例MOS管电感电流采样电路原理图;Fig. 3 is a schematic diagram of a full-wave proportional MOS tube inductance current sampling circuit;

图4是全波比例MOS管电感电流采样电路的典型采样波形图;Fig. 4 is a typical sampling waveform diagram of a full-wave proportional MOS tube inductance current sampling circuit;

图5是本发明一种全波电感电流采样电路的原理方框图;Fig. 5 is the principle block diagram of a kind of full-wave inductor current sampling circuit of the present invention;

图6是本发明一种全波电感电流采样电路实施例1的电路原理图;Fig. 6 is the circuit principle diagram of a kind of full-wave inductor current sampling circuit embodiment 1 of the present invention;

图7是本发明一种全波电感电流采样电路实施例2的电路原理图。FIG. 7 is a schematic circuit diagram of Embodiment 2 of a full-wave inductor current sampling circuit of the present invention.

具体实施方式Detailed ways

参考图5,本发明一种全波电感电流采样电路,包括系统功率级电路、比例MOS管电流采样电路、电压转电流及电流求和电路和采样直流校正及采样积分电路,所述系统功率级电路的第一输出端通过比例MOS管电流采样电路进而连接至采样直流校正及采样积分电路的第一输入端,所述系统功率级电路的第二输出端通过电压转电流及电流求和电路进而连接至采样直流校正及采样积分电路的第二输入端。With reference to Fig. 5, a kind of full-wave inductor current sampling circuit of the present invention comprises system power level circuit, proportional MOS tube current sampling circuit, voltage conversion current and current summation circuit and sampling DC correction and sampling integral circuit, described system power level The first output terminal of the circuit is further connected to the first input terminal of the sampling DC correction and sampling integration circuit through the proportional MOS tube current sampling circuit, and the second output terminal of the system power stage circuit is further connected to the voltage-to-current and current summation circuit. Connect to the second input end of the sampling DC correction and sampling integration circuit.

进一步作为优选的实施方式,所述系统功率级电路包括第一PMOS管M1、第一NMOS管N1、第二NMOS管N2和电感L,所述第一PMOS管M1的源极分别与比例MOS管电流采样电路的输入端和电压输入端连接,所述第一PMOS管M1的漏极分别与比例MOS管电流采样电路的第二输入端、第一NMOS管N1的漏极和电压转电流及电流求和电路的输入端连接,所述第一PMOS管M1的漏极通过电感L连接至第二NMOS管N2的漏极,所述第二NMOS管N2的漏极与电压转电流及电流求和电路的第三输入端相连接。As a further preferred embodiment, the system power stage circuit includes a first PMOS transistor M1, a first NMOS transistor N1, a second NMOS transistor N2 and an inductor L, and the source of the first PMOS transistor M1 is connected to the proportional MOS transistor The input end of the current sampling circuit is connected to the voltage input end, and the drain electrode of the first PMOS transistor M1 is respectively connected to the second input end of the proportional MOS transistor current sampling circuit, the drain electrode of the first NMOS transistor N1, and the voltage conversion current and the current The input end of the summation circuit is connected, the drain of the first PMOS transistor M1 is connected to the drain of the second NMOS transistor N2 through the inductor L, and the drain of the second NMOS transistor N2 is converted from voltage to current and summed The third input terminal of the circuit is connected.

本发明实施例中,所述电压转电流及电流求和电路包括两个电压转电流电路和一个电流求和电路。两个电压转电流电路分别将电感L两端的电压VX1和VX2转换成电流,然后将两路电流进行相减,相减之后的电流为采样电容充电,采样电容两端的电压即为采样信号。由于非理想因素如电感L的直流电阻DCR的影响,导致采样信号的DC值有所偏移,因此需要一个采样直流校正电路来进行直流校正。在校正过程中,需要用传统的比例MOS管采样方法得到一个参考信号。In the embodiment of the present invention, the voltage-to-current and current summation circuit includes two voltage-to-current circuits and a current summation circuit. The two voltage-to-current circuits convert the voltages V X1 and V X2 at both ends of the inductor L into currents, and then subtract the two currents. The subtracted current charges the sampling capacitor, and the voltage at both ends of the sampling capacitor is the sampling signal. . Due to the impact of non-ideal factors such as the DC resistance DCR of the inductor L, the DC value of the sampling signal is offset, so a sampling DC correction circuit is needed to perform DC correction. In the calibration process, a reference signal needs to be obtained by traditional proportional MOS tube sampling method.

在理想情况下,即不考虑电感L的直流电阻DCR的影响,根据电感L电流与电感L两端电压关系可以知道,某一时刻电感L电流大小为:假设两个电压转电流电路的增益均为gm,那么电感L两端的电压VX1(τ)和VX2(τ)转换成电流之后分别为gm*VX1(τ)和gm*VX2(τ),两个电流相减之后为采样电容充电,根据电容两端的电压与电容充电电流之间的关系可以知道,某一时刻电容两端的电压大小为:由此得到:或者可以看出,某一时刻电容两端的电压uC(t)与流过电感L的电流iL(t)是成比例的,而且比例系数gmL/C是一个固定值,因此可以说电容两端的电压uC(t)是电感L的电流iL(t)的采样值。In an ideal situation, that is, regardless of the influence of the DC resistance DCR of the inductor L, according to the relationship between the current of the inductor L and the voltage across the inductor L, it can be known that the current of the inductor L at a certain moment is: Assuming that the gains of the two voltage-to-current circuits are both g m , then the voltages V X1 (τ) and V X2 (τ) across the inductor L are converted into currents, respectively g m *V X1 (τ) and g m *V X2 (τ), the two currents are subtracted to charge the sampling capacitor. According to the relationship between the voltage across the capacitor and the charging current of the capacitor, it can be known that the voltage across the capacitor at a certain moment is: From this we get: or It can be seen that the voltage u C (t) across the capacitor at a certain moment is proportional to the current i L (t) flowing through the inductor L, and the proportionality coefficient g m L/C is a fixed value, so it can be said that the capacitor The voltage u C (t) across both ends is the sampling value of the current i L (t) of the inductor L.

但是在实际情况中,电感L存在直流电阻DCR,因此就会存在一个直流电压误差uDC(t)=iL(t)*DCR,在这种情况下,某一时刻电感L电流大小为:But in the actual situation, the inductor L has a DC resistance DCR, so there will be a DC voltage error u DC (t)=i L (t)*DCR, in this case, the current of the inductor L at a certain moment is:

而电容两端的电压大小仍然为:由此得到:由于DC-DC中的电感L电流不能倒流,即iL(t)≥0,因此uDC(t)≥0。所以可以看出,某一时刻电容两端的电压uC(t)与流过电感L的电流iL(t)不再是成比例的,而是存在一个误差而且此误差随着时间的推移会越来越大,导致电容采样得到的电感L电流值存在一个直流偏差,因此需要采样直流校正及采样积分电路来进行直流校正。在校正过程中,需要用传统的比例MOS管采样方法得到一个参考信号。The voltage across the capacitor is still: From this we get: Since the current of the inductor L in the DC-DC cannot flow backwards, that is, i L (t)≥0, so u DC (t)≥0. So it can be seen that the voltage u C (t) across the capacitor at a certain moment is no longer proportional to the current i L (t) flowing through the inductor L, but there is an error Moreover, this error will become larger and larger as time goes by, resulting in a DC deviation in the inductor L current value obtained by capacitance sampling, so sampling DC correction and sampling integration circuits are required for DC correction. In the calibration process, a reference signal needs to be obtained by traditional proportional MOS tube sampling method.

参考图6,本发明实施例1中,所述电压转电流及电流求和电路包括第二PMOS管M2、第三PMOS管M3、第四PMOS管M4、第五PMOS管M5、第三NMOS管N3、第四NMOS管N4、第五NMOS管N5、第六NMOS管N6、第一电阻R1、第二电阻R2、第一运算放大器Amp1和第二运算放大器Amp2,所述第二PMOS管M2的源极、第三PMOS管M3的源极、第四PMOS管M4的源极和第五PMOS管M5的源极均连接至电源端,所述第二PMOS管M2的栅极分别与第二PMOS管M2的漏极、第三NMOS管N3的漏极和第三PMOS管M3的栅极连接,所述第五PMOS管M5的栅极分别与第五PMOS管M5的漏极、第四NMOS管N4的漏极和第四PMOS管M4的栅极连接,所述第三PMOS管M3的漏极分别与采样直流校正及采样积分电路的输入端和第五NMOS管N5的漏极连接,所述第四PMOS管M4的漏极分别与第六NMOS管N6的漏极、第六NMOS管N6的栅极和第五NMOS管N5的栅极连接,所述第三NMOS管N3的栅极与第一运算放大器Amp1的输出端连接,所述第三NMOS管N3的源极分别与第一电阻R1的第一端和第一运算器的反相输入端连接,所述第一运算器的同相输入端与第一PMOS管M1的漏极连接,所述第四NMOS管N4的栅极与第二运算放大器Amp2的输出端连接,所述第四NMOS管N4的源极分别与第二电阻R2的第一端和第二运算器的反相输入端连接,所述第二运算器的同相输入端与第二NMOS管N2的漏极连接。所述采样直流校正及采样积分电路包括缓冲器Buffer、开关S和采样积分电容C,所述比例MOS管电流采样电路的输出端与缓冲器Buffer的输入端连接,所述缓冲器Buffer的输出端通过开关S连接至采样积分电容C的第一端,所述采样积分电容C的第一端连接至第三PMOS管M3的漏极。Referring to FIG. 6, in Embodiment 1 of the present invention, the voltage-to-current and current summation circuit includes a second PMOS transistor M2, a third PMOS transistor M3, a fourth PMOS transistor M4, a fifth PMOS transistor M5, and a third NMOS transistor N3, the fourth NMOS transistor N4, the fifth NMOS transistor N5, the sixth NMOS transistor N6, the first resistor R1, the second resistor R2, the first operational amplifier Amp1 and the second operational amplifier Amp2, the second PMOS transistor M2 The source, the source of the third PMOS transistor M3, the source of the fourth PMOS transistor M4 and the source of the fifth PMOS transistor M5 are all connected to the power supply terminal, and the gate of the second PMOS transistor M2 is connected to the second PMOS transistor M2 respectively. The drain of the transistor M2, the drain of the third NMOS transistor N3 are connected to the gate of the third PMOS transistor M3, and the gate of the fifth PMOS transistor M5 is respectively connected to the drain of the fifth PMOS transistor M5 and the fourth NMOS transistor. The drain of N4 is connected to the gate of the fourth PMOS transistor M4, the drain of the third PMOS transistor M3 is respectively connected to the input terminal of the sampling DC correction and sampling integration circuit and the drain of the fifth NMOS transistor N5, and the drain of the third PMOS transistor M3 is connected to the drain of the fifth NMOS transistor N5. The drain of the fourth PMOS transistor M4 is respectively connected to the drain of the sixth NMOS transistor N6, the gate of the sixth NMOS transistor N6, and the gate of the fifth NMOS transistor N5, and the gate of the third NMOS transistor N3 is connected to the gate of the sixth NMOS transistor N6. The output terminal of an operational amplifier Amp1 is connected, the source of the third NMOS transistor N3 is respectively connected with the first terminal of the first resistor R1 and the inverting input terminal of the first computing unit, and the non-inverting input terminal of the first computing unit The terminal is connected to the drain of the first PMOS transistor M1, the gate of the fourth NMOS transistor N4 is connected to the output end of the second operational amplifier Amp2, and the source of the fourth NMOS transistor N4 is respectively connected to the second resistor R2. The first end is connected to the inverting input end of the second arithmetic unit, and the non-inverting input end of the second arithmetic unit is connected to the drain of the second NMOS transistor N2. The sampling direct current correction and sampling integration circuit includes a buffer Buffer, a switch S and a sampling integration capacitor C, the output end of the proportional MOS tube current sampling circuit is connected with the input end of the buffer Buffer, and the output end of the buffer Buffer The switch S is connected to the first terminal of the sampling and integrating capacitor C, and the first terminal of the sampling and integrating capacitor C is connected to the drain of the third PMOS transistor M3.

其中,所述系统功率级电路的详细介绍参见图1。所述比例MOS管电流采样电路既可以采用图2中的半波比例MOS管电感电流采样电路,也可以采用图3中的全波比例MOS管电感电流采样电路,至于电路内部详细介绍,参见技术背景部分。电压转电流及电流求和电路中由第一运算放大器Amp1、第三NMOS管N3、第一电阻R1组成的电压转电流电路1,由第二运算放大器Amp2、第四NMOS管N4、第二电阻R2组成的电压转电流电路2,由第二PMOS管M2与第三PMOS管M3、第四PMOS管M4与第五PMOS管M5、第五NMOS管N5与第六NMOS管N6组成的三对电流镜。电压转电流电路1将VX1处的电压转换成电流,然后通过第二PMOS管M2与第三PMOS管M3组成的电流镜将电流镜像复制,然后向Vsense节点灌入电流;电压转电流电路2将VX2处的电压转换成电流,然后通过第五PMOS管M5与第四PMOS管M4、第五NMOS管N5与第六NMOS管N6组成的电流镜将电流镜像复制,然后从Vsense节点拉出电流,从而在该节点处实现了电流相减,即相减后的电流从Vsense节点流出,为采样积分电容C充电。最后是采样直流校正电路及采样积分电容C模块,该模块包括一个缓冲器Buffer和一个开关S以及采样积分电容C。所述缓冲器Buffer的输入接到比例MOS管电流采样电路的Vsen输出,在比例MOS管电流采样电路稳定工作时,其输出Vsen是比较精确的,因此在此时可以将开关S闭合一小段时间,强制采样积分电容C的电压等于比例MOS管电流采样电路的输出Vsen,从而实现了复位校正。前面分析得出,误差信号大小为如果在SIMO DC-DC的每一个工作周期内将开关S闭合一小段时间,实现一次复位,那么由于误差累积时间短,因此产生的误差很小,采样电容上面得到的采样电压可以精确反映出电感电流信息。Wherein, refer to FIG. 1 for a detailed introduction of the power stage circuit of the system. The proportional MOS tube current sampling circuit can either adopt the half-wave proportional MOS tube inductance current sampling circuit in FIG. 2 or the full-wave proportional MOS tube inductance current sampling circuit in FIG. background part. In the voltage-to-current and current summation circuit, the voltage-to-current circuit 1 composed of the first operational amplifier Amp1, the third NMOS transistor N3, and the first resistor R1 is composed of the second operational amplifier Amp2, the fourth NMOS transistor N4, and the second resistor The voltage-to-current circuit 2 composed of R2, three pairs of current circuits composed of the second PMOS transistor M2 and the third PMOS transistor M3, the fourth PMOS transistor M4 and the fifth PMOS transistor M5, the fifth NMOS transistor N5 and the sixth NMOS transistor N6 mirror. The voltage-to-current circuit 1 converts the voltage at V X1 into a current, and then copies the current mirror through the current mirror composed of the second PMOS transistor M2 and the third PMOS transistor M3, and then injects current into the V sense node; the voltage-to-current circuit 2 Convert the voltage at V X2 into a current, and then copy the current mirror through the current mirror composed of the fifth PMOS transistor M5 and the fourth PMOS transistor M4, the fifth NMOS transistor N5 and the sixth NMOS transistor N6, and then from the V sense node The current is pulled out, so that the current subtraction is realized at this node, that is, the subtracted current flows out from the V sense node to charge the sampling integration capacitor C. Finally, there is a sampling DC correction circuit and a sampling integration capacitor C module, which includes a buffer Buffer, a switch S and a sampling integration capacitor C. The input of the buffer Buffer is connected to the V sen output of the proportional MOS tube current sampling circuit. When the proportional MOS tube current sampling circuit works stably, its output V sen is relatively accurate, so the switch S can be closed for a period of time at this time. In a short period of time, the voltage of the sampling integration capacitor C is forced to be equal to the output V sen of the proportional MOS tube current sampling circuit, thereby realizing reset correction. According to the previous analysis, the size of the error signal is If the switch S is closed for a short period of time in each working cycle of SIMO DC-DC to realize a reset, the error accumulation time is short, so the error generated is very small, and the sampling voltage obtained on the sampling capacitor can accurately reflect the inductance current information.

参考图7,本发明实施例2中,所述电压转电流及电流求和电路包括第二PMOS管M2、第三PMOS管M3、第四PMOS管M4、第五PMOS管M5、第三NMOS管N3、第四NMOS管N4、第五NMOS管N5、第六NMOS管N6、第一电阻R1、第二电阻R2、第一运算放大器Amp1和第二运算放大器Amp2,所述第二PMOS管M2的源极、第三PMOS管M3的源极、第四PMOS管M4的源极和第五PMOS管M5的源极均连接至电源端,所述第二PMOS管M2的栅极分别与第二PMOS管M2的漏极、第三NMOS管N3的漏极和第三PMOS管M3的栅极连接,所述第五PMOS管M5的栅极分别与第五PMOS管M5的漏极、第四NMOS管N4的漏极和第四PMOS管M4的栅极连接,所述第三PMOS管M3的漏极分别与采样直流校正及采样积分电路的输入端和第五NMOS管N5的漏极连接,所述第四PMOS管M4的漏极分别与第六NMOS管N6的漏极、第六NMOS管N6的栅极和第五NMOS管N5的栅极连接,所述第三NMOS管N3的栅极与第一运算放大器Amp1的输出端连接,所述第三NMOS管N3的源极分别与第一电阻R1的第一端和第一运算器的反相输入端连接,所述第一运算器的同相输入端与第一PMOS管M1的漏极连接,所述第四NMOS管N4的栅极与第二运算放大器Amp2的输出端连接,所述第四NMOS管N4的源极分别与第二电阻R2的第一端和第二运算器的反相输入端连接,所述第二运算器的同相输入端与第二NMOS管N2的漏极连接。所述采样直流校正及采样积分电路包括第三运算放大器Amp3、采样积分电容C、第一电容C1、第二电容C2、第三电阻R3、第四电阻R4、第六PMOS管M6、第七PMOS管M7、第八PMOS管M8、第七NMOS管N7、第八NMOS管N8、第九NMOS管N9、第十NMOS管N10和第十一NMOS管N11,所述比例MOS管电流采样电路的输出端连接至第三运算放大器Amp3的反相输入端,所述第三运算放大器Amp3的输出端分别与第一电容C1的第一端和第七NMOS管N7的栅极连接,所述第三运算放大器Amp3的输出端通过第三电阻R3连接至第二电容C2的第一端,所述第六PMOS管M6的源极、第七PMOS管M7的源极和第八PMOS管M8的源极均连接至电源端,所述第六PMOS管M6的栅极分别与第六PMOS管M6的漏极和第七NMOS管N7的漏极连接,所述第七PMOS管M7的栅极分别与第七PMOS管M7的漏极、第八PMOS管M8的栅极和第八NMOS管N8的漏极相连接,所述第七NMOS管N7的源极分别与第四电阻R4的第一端和第九NMOS管N9的漏极连接,所述第八NMOS管N8的源极分别与第四电阻R4的第二端和第十NMOS管N10的漏极连接,所述第九NMOS管N9的栅极、第十NMOS管N10的栅极和第十一NMOS管N11的栅极均连接至偏置电压端,所述第三运算放大器Amp3的同相输入端分别与第八PMOS管M8的漏极、第十一NMOS管N11的漏极、采样积分电容C的第一端和第三PMOS管M3的漏极相连接。Referring to FIG. 7, in Embodiment 2 of the present invention, the voltage-to-current and current summation circuit includes a second PMOS transistor M2, a third PMOS transistor M3, a fourth PMOS transistor M4, a fifth PMOS transistor M5, and a third NMOS transistor. N3, the fourth NMOS transistor N4, the fifth NMOS transistor N5, the sixth NMOS transistor N6, the first resistor R1, the second resistor R2, the first operational amplifier Amp1 and the second operational amplifier Amp2, the second PMOS transistor M2 The source, the source of the third PMOS transistor M3, the source of the fourth PMOS transistor M4 and the source of the fifth PMOS transistor M5 are all connected to the power supply terminal, and the gate of the second PMOS transistor M2 is connected to the second PMOS transistor M2 respectively. The drain of the transistor M2, the drain of the third NMOS transistor N3 are connected to the gate of the third PMOS transistor M3, and the gate of the fifth PMOS transistor M5 is respectively connected to the drain of the fifth PMOS transistor M5 and the fourth NMOS transistor. The drain of N4 is connected to the gate of the fourth PMOS transistor M4, the drain of the third PMOS transistor M3 is respectively connected to the input terminal of the sampling DC correction and sampling integration circuit and the drain of the fifth NMOS transistor N5, and the drain of the third PMOS transistor M3 is connected to the drain of the fifth NMOS transistor N5. The drain of the fourth PMOS transistor M4 is respectively connected to the drain of the sixth NMOS transistor N6, the gate of the sixth NMOS transistor N6, and the gate of the fifth NMOS transistor N5, and the gate of the third NMOS transistor N3 is connected to the gate of the sixth NMOS transistor N6. The output terminal of an operational amplifier Amp1 is connected, the source of the third NMOS transistor N3 is respectively connected with the first terminal of the first resistor R1 and the inverting input terminal of the first computing unit, and the non-inverting input terminal of the first computing unit The terminal is connected to the drain of the first PMOS transistor M1, the gate of the fourth NMOS transistor N4 is connected to the output end of the second operational amplifier Amp2, and the source of the fourth NMOS transistor N4 is respectively connected to the second resistor R2. The first end is connected to the inverting input end of the second arithmetic unit, and the non-inverting input end of the second arithmetic unit is connected to the drain of the second NMOS transistor N2. The sampling DC correction and sampling integration circuit includes a third operational amplifier Amp3, a sampling integration capacitor C, a first capacitor C1, a second capacitor C2, a third resistor R3, a fourth resistor R4, a sixth PMOS transistor M6, and a seventh PMOS transistor Tube M7, eighth PMOS tube M8, seventh NMOS tube N7, eighth NMOS tube N8, ninth NMOS tube N9, tenth NMOS tube N10 and eleventh NMOS tube N11, the output of the proportional MOS tube current sampling circuit terminal is connected to the inverting input terminal of the third operational amplifier Amp3, the output terminal of the third operational amplifier Amp3 is respectively connected to the first terminal of the first capacitor C1 and the gate of the seventh NMOS transistor N7, the third operational amplifier The output end of the amplifier Amp3 is connected to the first end of the second capacitor C2 through the third resistor R3, the source of the sixth PMOS transistor M6, the source of the seventh PMOS transistor M7 and the source of the eighth PMOS transistor M8 are all The gate of the sixth PMOS transistor M6 is connected to the drain of the sixth PMOS transistor M6 and the drain of the seventh NMOS transistor N7 respectively, and the gate of the seventh PMOS transistor M7 is connected to the drain of the seventh NMOS transistor M7 respectively. The drain of the PMOS transistor M7, the gate of the eighth PMOS transistor M8, and the drain of the eighth NMOS transistor N8 are connected, and the source of the seventh NMOS transistor N7 is respectively connected to the first end of the fourth resistor R4 and the ninth end of the fourth resistor R4. The drain of the NMOS transistor N9 is connected, the source of the eighth NMOS transistor N8 is respectively connected to the second end of the fourth resistor R4 and the drain of the tenth NMOS transistor N10, the gate of the ninth NMOS transistor N9, Both the gate of the tenth NMOS transistor N10 and the gate of the eleventh NMOS transistor N11 are connected to the bias voltage terminal, and the non-inverting input terminal of the third operational amplifier Amp3 is respectively connected to the drain of the eighth PMOS transistor M8 and the tenth PMOS transistor M8. The drain of an NMOS transistor N11, the first terminal of the sampling integration capacitor C and the drain of the third PMOS transistor M3 are connected.

其中,所述系统功率级电路的详细介绍参见图1。所述比例MOS管电流采样电路即为图3中的全波比例MOS管电感电流采样电路,其详细介绍参见技术背景部分对图3的介绍。电压转电流电路及电流求和电路模块与实施例1相同,相减后的电流从Vsense节点流出,为采样积分电容C充电。最后是采样直流校正及采样积分电路,该电路模块包括由第三运算放大器Amp3、第一电容C1、第二电容C2、第三电阻R3组成的比例积分器(图7中虚线方框内)以及由第七NMOS管N7、第八NMOS管N8、第九NMOS管N9、第十NMOS管N10、第十一NMOS管N11和第四电阻R4组成的电流减法电路。第三运算放大器Amp3的同相输入端接采样积分电容C上的采样电压Vsense,反相输入端接比例MOS管电流采样电路的采样电压Vsen,通过比例积分器之后,比例积分器的输出端接第七NMOS管N7的栅极。所述第九NMOS管N9、第十NMOS管N10和第十一NMOS管N11由同一个固定电压Vbias偏置,因此第九NMOS管N9、第十NMOS管N10和第十一NMOS管N11相当于三个恒流源,且电流相等。Wherein, refer to FIG. 1 for a detailed introduction of the power stage circuit of the system. The proportional MOS tube current sampling circuit is the full-wave proportional MOS tube inductance current sampling circuit in FIG. 3 . For a detailed introduction, refer to the introduction to FIG. 3 in the technical background section. The voltage-to-current circuit and the current summation circuit module are the same as those in Embodiment 1, and the subtracted current flows out from the V sense node to charge the sampling integration capacitor C. Finally, it is a sampling DC correction and sampling integration circuit. This circuit module includes a proportional integrator (in the dotted line box in Fig. 7) composed of the third operational amplifier Amp3, the first capacitor C1, the second capacitor C2, and the third resistor R3; A current subtraction circuit composed of the seventh NMOS transistor N7, the eighth NMOS transistor N8, the ninth NMOS transistor N9, the tenth NMOS transistor N10, the eleventh NMOS transistor N11 and the fourth resistor R4. The non-inverting input terminal of the third operational amplifier Amp3 is connected to the sampling voltage V sense on the sampling integration capacitor C, and the inverting input terminal is connected to the sampling voltage V sen of the proportional MOS tube current sampling circuit. After passing through the proportional integrator, the output terminal of the proportional integrator Connect to the gate of the seventh NMOS transistor N7. The ninth NMOS transistor N9, the tenth NMOS transistor N10 and the eleventh NMOS transistor N11 are biased by the same fixed voltage V bias , so the ninth NMOS transistor N9, the tenth NMOS transistor N10 and the eleventh NMOS transistor N11 are equivalent In three constant current sources, and the currents are equal.

当比例积分器的输入Vsense与Vsen相等时,比例积分器的输出为运放的共模输出,其值约为VCC/2,此时,第七NMOS管N7与第八NMOS管N8的偏置情况相同,因此流过MOS管N7与N8的电流相等,且都等于MOS管N9、N10和N11提供的恒定电流。由于第七NMOS管N7与第八NMOS管N8组成电流镜,因此流过第八PMOS管M8的电流等于流过第七PMOS管M7的电流,也等于第九NMOS管N9、第十NMOS管N10和第十一NMOS管N11提供的恒定电流,因此直流校正电路在Vsense节点的输出电流为0,流过第四电阻R4的电流也为0,此时无需校正。When the input V sense of the proportional integrator is equal to V sen , the output of the proportional integrator is the common mode output of the operational amplifier, and its value is about V CC /2. At this time, the seventh NMOS transistor N7 and the eighth NMOS transistor N8 The bias conditions are the same, so the currents flowing through the MOS transistors N7 and N8 are equal, and they are all equal to the constant currents provided by the MOS transistors N9, N10 and N11. Since the seventh NMOS transistor N7 and the eighth NMOS transistor N8 form a current mirror, the current flowing through the eighth PMOS transistor M8 is equal to the current flowing through the seventh PMOS transistor M7, which is also equal to the ninth NMOS transistor N9 and the tenth NMOS transistor N10 and the constant current provided by the eleventh NMOS transistor N11, so the output current of the DC correction circuit at the V sense node is 0, and the current flowing through the fourth resistor R4 is also 0, and correction is not required at this time.

当比例积分器的输入的Vsense大于Vsen时,比例积分器的输出增大,因此流过第七NMOS管N7的电流增大,而流过第九NMOS管N9、第十NMOS管N10和第十一NMOS管N11的电流是恒定值,因此多余的电流通过第四电阻R4流向第十NMOS管N10,且流过第八NMOS管N8的电流减小,因此流过第七PMOS管M7和第八PMOS管M8的电流减小。此时,对于Vsense节点来说,通过第八PMOS管M8灌入的电流小于通过第十一NMOS管N11拉出的电流,因此采样积分电容C会被采样直流校正及采样积分电路放电,节点Vsense的电压会减小,直到Vsense与Vsen相等,因此实现校正。When the input V sense of the proportional integrator is greater than V sen , the output of the proportional integrator increases, so the current flowing through the seventh NMOS transistor N7 increases, and flows through the ninth NMOS transistor N9, the tenth NMOS transistor N10 and The current of the eleventh NMOS transistor N11 is a constant value, so the excess current flows to the tenth NMOS transistor N10 through the fourth resistor R4, and the current flowing through the eighth NMOS transistor N8 decreases, so it flows through the seventh PMOS transistor M7 and The current of the eighth PMOS transistor M8 decreases. At this time, for the V sense node, the current poured through the eighth PMOS transistor M8 is smaller than the current pulled out through the eleventh NMOS transistor N11, so the sampling integration capacitor C will be discharged by the sampling DC correction and sampling integration circuit, and the node The voltage of V sense decreases until V sense is equal to V sen , thus achieving correction.

当比例积分器的输入Vsense小于Vsen时,比例积分器的输出减小,因此流过第七NMOS管N7的电流减小,而流过第九NMOS管N9、第十NMOS管N10和第十一NMOS管N11的电流是恒定值,因此不足的电流由第八NMOS管N8通过第四电阻R4提供,因此流过第八NMOS管N8的电流增大,故流过第七PMOS管M7和第八PMOS管M8的电流也增大。此时,对于Vsense节点来说,通过第八PMOS管M8灌入的电流大于通过第十一NMOS管N11拉出的电流,因此采样积分电容C会被采样直流校正电路充电,节点Vsense的电压会增大,直到Vsense与Vsen相等,因此实现校正。When the input V sense of the proportional integrator is smaller than V sen , the output of the proportional integrator decreases, so the current flowing through the seventh NMOS transistor N7 decreases, and flows through the ninth NMOS transistor N9, the tenth NMOS transistor N10 and the The current of the eleventh NMOS transistor N11 is a constant value, so the insufficient current is provided by the eighth NMOS transistor N8 through the fourth resistor R4, so the current flowing through the eighth NMOS transistor N8 increases, so it flows through the seventh PMOS transistor M7 and The current of the eighth PMOS transistor M8 also increases. At this time, for the V sense node, the current poured in through the eighth PMOS transistor M8 is greater than the current pulled out through the eleventh NMOS transistor N11, so the sampling integration capacitor C will be charged by the sampling DC correction circuit, and the node V sense The voltage will increase until V sense is equal to V sen , thus achieving correction.

通过校正后的采样积分电容C上的采样电压Vsense与比例MOS管电流采样电路采样得到的电压Vsen相等,这样既实现了电感L电流的精确采样,又是连续波形,且在电路状态切换时不会产生毛刺,因此可用于自动升降压型单电感L多输出DC-DC变换器的精确控制以及过流保护、非连续电感L电流模式(DCM)探测等。不会出现误触发,也不会造成系统不稳定。The sampling voltage V sense on the corrected sampling integration capacitor C is equal to the voltage V sen sampled by the proportional MOS tube current sampling circuit, which not only realizes accurate sampling of the inductor L current, but also has a continuous waveform, and switches between circuit states Therefore, it can be used for precise control of automatic buck-boost single-inductor L multi-output DC-DC converter, over-current protection, and detection of discontinuous inductance L current mode (DCM). There will be no false triggers and no system instability.

以上是对本发明的较佳实施进行了具体说明,但本发明创造并不限于所述实施例,熟悉本领域的技术人员在不违背本发明精神的前提下还可做作出种种的等同变形或替换,这些等同的变形或替换均包含在本申请权利要求所限定的范围内。The above is a specific description of the preferred implementation of the present invention, but the invention is not limited to the described embodiments, and those skilled in the art can also make various equivalent deformations or replacements without violating the spirit of the present invention. , these equivalent modifications or replacements are all within the scope defined by the claims of the present application.

Claims (5)

1.一种全波电感电流采样电路,其特征在于:包括系统功率级电路、比例MOS管电流采样电路、电压转电流及电流求和电路和采样直流校正及采样积分电路,所述系统功率级电路的第一输出端通过比例MOS管电流采样电路进而连接至采样直流校正及采样积分电路的第一输入端,所述系统功率级电路的第二输出端通过电压转电流及电流求和电路进而连接至采样直流校正及采样积分电路的第二输入端。1. A full-wave inductance current sampling circuit is characterized in that: comprise system power level circuit, proportional MOS tube current sampling circuit, voltage conversion current and current summation circuit and sampling DC correction and sampling integral circuit, described system power level The first output terminal of the circuit is further connected to the first input terminal of the sampling DC correction and sampling integration circuit through the proportional MOS tube current sampling circuit, and the second output terminal of the system power stage circuit is further connected to the voltage-to-current and current summation circuit. Connect to the second input end of the sampling DC correction and sampling integration circuit. 2.根据权利要求1所述的一种全波电感电流采样电路,其特征在于:所述系统功率级电路包括第一PMOS管、第一NMOS管、第二NMOS管和电感,所述第一PMOS管的源极分别与比例MOS管电流采样电路的输入端和电压输入端连接,所述第一PMOS管的漏极分别与比例MOS管电流采样电路的第二输入端、第一NMOS管的漏极和电压转电流及电流求和电路的输入端连接,所述第一PMOS管的漏极通过电感连接至第二NMOS管的漏极,所述第二NMOS管的漏极与电压转电流及电流求和电路的第三输入端相连接。2. A kind of full-wave inductor current sampling circuit according to claim 1, characterized in that: said system power stage circuit comprises a first PMOS transistor, a first NMOS transistor, a second NMOS transistor and an inductor, said first The source of the PMOS tube is connected to the input terminal and the voltage input terminal of the proportional MOS tube current sampling circuit respectively, and the drain of the first PMOS tube is connected to the second input terminal of the proportional MOS tube current sampling circuit and the first NMOS tube respectively. The drain is connected to the input terminal of the voltage-to-current and current summation circuit, the drain of the first PMOS transistor is connected to the drain of the second NMOS transistor through an inductor, and the drain of the second NMOS transistor is connected to the voltage-to-current and the third input terminal of the current summation circuit. 3.根据权利要求2所述的一种全波电感电流采样电路,其特征在于:所述电压转电流及电流求和电路包括第二PMOS管、第三PMOS管、第四PMOS管、第五PMOS管、第三NMOS管、第四NMOS管、第五NMOS管、第六NMOS管、第一电阻、第二电阻、第一运算放大器和第二运算放大器,所述第二PMOS管的源极、第三PMOS管的源极、第四PMOS管的源极和第五PMOS管的源极均连接至电源端,所述第二PMOS管的栅极分别与第二PMOS管的漏极、第三NMOS管的漏极和第三PMOS管的栅极连接,所述第五PMOS管的栅极分别与第五PMOS管的漏极、第四NMOS管的漏极和第四PMOS管的栅极连接,所述第三PMOS管的漏极分别与采样直流校正及采样积分电路的第二输入端和第五NMOS管的漏极连接,所述第四PMOS管的漏极分别与第六NMOS管的漏极、第六NMOS管的栅极和第五NMOS管的栅极连接,所述第三NMOS管的栅极与第一运算放大器的输出端连接,所述第三NMOS管的源极分别与第一电阻的第一端和第一运算器的反相输入端连接,所述第一运算器的同相输入端与第一PMOS管的漏极连接,所述第四NMOS管的栅极与第二运算放大器的输出端连接,所述第四NMOS管的源极分别与第二电阻的第一端和第二运算器的反相输入端连接,所述第二运算器的同相输入端与第二NMOS管的漏极连接。3. A kind of full-wave inductance current sampling circuit according to claim 2, is characterized in that: described voltage turns current and current summation circuit comprises second PMOS transistor, the 3rd PMOS transistor, the 4th PMOS transistor, the 5th PMOS transistor PMOS transistor, third NMOS transistor, fourth NMOS transistor, fifth NMOS transistor, sixth NMOS transistor, first resistor, second resistor, first operational amplifier and second operational amplifier, the source of the second PMOS transistor , the source of the third PMOS transistor, the source of the fourth PMOS transistor, and the source of the fifth PMOS transistor are all connected to the power supply terminal, and the gate of the second PMOS transistor is connected to the drain of the second PMOS transistor, the drain of the second PMOS transistor, and the source of the fifth PMOS transistor. The drains of the three NMOS transistors are connected to the gates of the third PMOS transistors, and the gates of the fifth PMOS transistors are respectively connected to the drains of the fifth PMOS transistors, the drains of the fourth NMOS transistors, and the gates of the fourth PMOS transistors. connected, the drain of the third PMOS transistor is respectively connected to the second input terminal of the sampling DC correction and sampling integration circuit and the drain of the fifth NMOS transistor, and the drain of the fourth PMOS transistor is respectively connected to the sixth NMOS transistor The drain of the sixth NMOS transistor is connected to the gate of the fifth NMOS transistor, the gate of the third NMOS transistor is connected to the output terminal of the first operational amplifier, and the sources of the third NMOS transistor are respectively It is connected with the first end of the first resistor and the inverting input end of the first operator, the non-inverting input end of the first operator is connected with the drain of the first PMOS transistor, and the gate of the fourth NMOS transistor is connected with the The output end of the second operational amplifier is connected, the source of the fourth NMOS transistor is respectively connected to the first end of the second resistor and the inverting input end of the second operational unit, and the non-inverting input end of the second operational unit is connected to the inverting input end of the second operational unit. The drain connection of the second NMOS transistor. 4.根据权利要求3所述的一种全波电感电流采样电路,其特征在于:所述采样直流校正及采样积分电路包括缓冲器、开关和采样积分电容,所述比例MOS管电流采样电路的输出端与缓冲器的输入端连接,所述缓冲器的输出端通过开关连接至采样积分电容的第一端,所述采样积分电容的第一端连接至第三PMOS管的漏极。4. A kind of full-wave inductance current sampling circuit according to claim 3, is characterized in that: described sampling DC correction and sampling integration circuit comprise buffer, switch and sampling integration capacitor, the ratio MOS tube current sampling circuit The output end is connected to the input end of the buffer, and the output end of the buffer is connected to the first end of the sampling integration capacitor through the switch, and the first end of the sampling integration capacitor is connected to the drain of the third PMOS transistor. 5.根据权利要求3所述的一种全波电感电流采样电路,其特征在于:所述采样直流校正及采样积分电路包括第三运算放大器、采样积分电容、第一电容、第二电容、第三电阻、第四电阻、第六PMOS管、第七PMOS管、第八PMOS管、第七NMOS管、第八NMOS管、第九NMOS管、第十NMOS管和第十一NMOS管,所述比例MOS管电流采样电路的输出端连接至第三运算放大器的反相输入端,所述第三运算放大器的输出端分别与第一电容的第一端和第七NMOS管的栅极连接,所述第三运算放大器的输出端通过第三电阻连接至第二电容的第一端,所述第六PMOS管的源极、第七PMOS管的源极和第八PMOS管的源极均连接至电源端,所述第六PMOS管的栅极分别与第六PMOS管的漏极和第七NMOS管的漏极连接,所述第七PMOS管的栅极分别与第七PMOS管的漏极、第八PMOS管的栅极和第八NMOS管的漏极相连接,所述第七NMOS管的源极分别与第四电阻的第一端和第九NMOS管的漏极连接,所述第八NMOS管的源极分别与第四电阻的第二端和第十NMOS管的漏极连接,所述第九NMOS管的栅极、第十NMOS管的栅极和第十一NMOS管的栅极均连接至偏置电压端,所述第三运算放大器的同相输入端分别与第八PMOS管的漏极、第十一NMOS管的漏极、采样积分电容的第一端和第三PMOS管的漏极相连接。5. a kind of full-wave inductive current sampling circuit according to claim 3 is characterized in that: described sampling direct current correction and sampling integration circuit comprise the 3rd operational amplifier, sampling integration capacitance, first electric capacity, second electric capacity, the first The third resistor, the fourth resistor, the sixth PMOS transistor, the seventh PMOS transistor, the eighth PMOS transistor, the seventh NMOS transistor, the eighth NMOS transistor, the ninth NMOS transistor, the tenth NMOS transistor and the eleventh NMOS transistor, the The output terminal of the proportional MOS tube current sampling circuit is connected to the inverting input terminal of the third operational amplifier, and the output terminal of the third operational amplifier is respectively connected to the first terminal of the first capacitor and the gate of the seventh NMOS tube, so The output end of the third operational amplifier is connected to the first end of the second capacitor through the third resistor, and the source electrode of the sixth PMOS transistor, the source electrode of the seventh PMOS transistor and the source electrode of the eighth PMOS transistor are all connected to power supply end, the gate of the sixth PMOS transistor is connected to the drain of the sixth PMOS transistor and the drain of the seventh NMOS transistor respectively, and the gate of the seventh PMOS transistor is respectively connected to the drain of the seventh PMOS transistor, The gate of the eighth PMOS transistor is connected to the drain of the eighth NMOS transistor, the source of the seventh NMOS transistor is respectively connected to the first end of the fourth resistor and the drain of the ninth NMOS transistor, and the eighth NMOS transistor is connected to the drain of the ninth NMOS transistor. The source of the NMOS transistor is respectively connected to the second end of the fourth resistor and the drain of the tenth NMOS transistor, the gate of the ninth NMOS transistor, the gate of the tenth NMOS transistor and the gate of the eleventh NMOS transistor are connected to the bias voltage end, and the non-inverting input end of the third operational amplifier is respectively connected to the drain of the eighth PMOS transistor, the drain of the eleventh NMOS transistor, the first end of the sampling integration capacitor, and the third PMOS transistor. connected to the drain.
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