CN105762133B - A kind of stack encapsulation structure and its process - Google Patents
A kind of stack encapsulation structure and its process Download PDFInfo
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Abstract
本发明涉及一种堆叠式封装结构及其工艺方法,所述结构包括第一封装体(1)和第二封装体(2),所述第一封装体(1)包括第一基板(14)和第一芯片(16),所述第一基板(14)包括第一铜柱(11),所述第一基板上方的第一塑封料(17)上表面对应第一铜柱(11)的位置设置有开孔(18),所述第一铜柱(11)顶部设置有锡球(13),所述第二封装体(2)包括第二基板(19)、第二芯片(20)和第二塑封料(21),所述第二基板(19)下表面上设置有第二铜柱(12),所述第二铜柱(12)插装于第一塑封料(17)上的开孔(18)中。本发明一种堆叠式封装结构及其工艺方法,使回焊时的锡球能避免发生桥接现象,以提升产品的良率。
The invention relates to a stacked package structure and a process method thereof, the structure comprising a first package body (1) and a second package body (2), the first package body (1) comprising a first substrate (14) and the first chip (16), the first substrate (14) includes a first copper pillar (11), and the upper surface of the first molding compound (17) above the first substrate corresponds to the first copper pillar (11) An opening (18) is provided at the position, a solder ball (13) is provided on the top of the first copper pillar (11), and the second package (2) includes a second substrate (19), a second chip (20) and the second molding compound (21), the second substrate (19) is provided with a second copper pillar (12) on the lower surface, and the second copper pillar (12) is inserted on the first molding compound (17) in the opening (18). The invention discloses a stacked packaging structure and a process method thereof, which can prevent solder balls from bridging during reflowing, thereby improving the yield rate of products.
Description
技术领域technical field
本发明涉及一种堆叠式封装结构及其工艺方法,属于半导体封装技术领域。The invention relates to a stacked packaging structure and a process method thereof, belonging to the technical field of semiconductor packaging.
背景技术Background technique
随着近年来可携式电子产品的蓬勃发展,各类相关产品逐渐朝向高密度、高性能以及轻、薄、短、小的趋势而走,各式样封装层叠 (package on package,PoP)也因而配合推陈出新,以期能符合轻薄短小与高密度的要求。With the vigorous development of portable electronic products in recent years, all kinds of related products are gradually moving towards the trend of high density, high performance, light, thin, short and small, and various types of package stacking (package on package, PoP). Cooperate with innovation, in order to meet the requirements of thin, light, small and high density.
如图1所示,其为现有POP封装结构的剖视示意图。该封装堆栈装置包括两相叠的封装结构100与另一封装结构200。在形成第一封装体100后,对第一封装体上表面进行减薄,露出铜柱101,第二封装200借助其基板背面的锡球201堆叠且电性联接到下封装体100。As shown in FIG. 1 , it is a schematic cross-sectional view of an existing POP packaging structure. The package stacking device includes two stacked package structures 100 and another package structure 200 . After the first package 100 is formed, the upper surface of the first package is thinned to expose the copper pillars 101 , and the second package 200 is stacked and electrically connected to the lower package 100 by means of the solder balls 201 on the backside of the substrate.
上述的堆叠结构存在以下的缺陷:The above-mentioned stacking structure has the following defects:
1、随着电子组件的小型化,封装体内的线路间距变小,各焊接锡球间的间距需缩小, 致使相邻的锡球容易发生桥接(bridge)的现象;1. With the miniaturization of electronic components, the distance between the lines in the package becomes smaller, and the distance between the solder balls needs to be reduced, so that the adjacent solder balls are prone to bridging;
2、锡球于回焊后的体积及高度的公差大,回焊时,锡球会先变成软塌状态,同时于承受上方封装体200的重量后,容易塌扁变形,发生桥接;2. The volume and height tolerance of the solder balls after reflow is large. During reflow, the solder balls will first become soft and collapsed. At the same time, after bearing the weight of the package body 200 above, they are easy to collapse and deform, and bridging occurs;
3、锡球所排列成的栅状数组(grid array) 容易产生共面性不良,导致接点应力不平衡而容易造成堆叠结构倾斜。3. The grid array formed by the solder balls is likely to have poor coplanarity, resulting in unbalanced stress on the contacts and easily causing the stacked structure to tilt.
发明内容Contents of the invention
本发明所要解决的技术问题是针对上述现有技术提供一种堆叠式封装结构,使回焊时的锡球能避免发生桥接现象,以提升产品的良率,且能满足细间距的需求。The technical problem to be solved by the present invention is to provide a stacked packaging structure for the above prior art, so that the solder balls during reflow can avoid bridging phenomenon, so as to improve the yield of products and meet the requirements of fine pitch.
本发明的另一目的在于提供一种堆叠式封装结构,共面性(coplanarity)良好,易于控制产品高度,不倾斜;Another object of the present invention is to provide a stacked packaging structure with good coplanarity, easy to control product height, and no tilting;
本发明的再一目的是提供一种堆叠式封装结构的工艺方法,使堆叠结构在回焊时的锡球能避免发生桥接现象,以提升制程的良率。Another object of the present invention is to provide a process method of a stacked packaging structure, so that the solder balls of the stacked structure can avoid bridging during reflow, so as to improve the yield of the process.
本发明解决上述问题所采用的技术方案为:一种堆叠式封装结构,它包括第一封装体和第二封装体,所述第一封装体包括第一基板和第一芯片,所述第一基板包括第一线路图案和第一铜柱,所述第一基板上方设置有第一塑封料,所述第一塑封料上表面对应第一铜柱的位置设置有开孔,所述第一铜柱顶部暴露在第一塑封料上表面的开孔内,所述第一铜柱顶部设置有锡球,所述第二封装体包括第二基板、第二芯片和第二塑封料,所述第二基板下表面上设置有第二铜柱,所述第二铜柱插装于第一塑封料上的开孔中,并通过锡球与第一铜柱形成电性连接。The technical solution adopted by the present invention to solve the above problems is: a stacked packaging structure, which includes a first package and a second package, the first package includes a first substrate and a first chip, the first The substrate includes a first circuit pattern and a first copper pillar, a first molding compound is arranged above the first substrate, and openings are arranged on the upper surface of the first molding compound corresponding to the positions of the first copper pillars, and the first copper The top of the post is exposed in the opening on the upper surface of the first molding compound, the top of the first copper post is provided with solder balls, the second package includes a second substrate, a second chip and a second molding compound, the first A second copper column is arranged on the lower surface of the second substrate, and the second copper column is inserted into the opening on the first molding compound, and is electrically connected to the first copper column through solder balls.
所述第一芯片与第一基板中的第一线路图案实现电性连接,所述第一芯片和第一线路图案的上表面位于第一塑封料内部。The first chip is electrically connected to the first circuit pattern in the first substrate, and the upper surfaces of the first chip and the first circuit pattern are located inside the first molding compound.
所述第一铜柱和第二铜柱顶部呈凸形结构。The tops of the first copper pillar and the second copper pillar have a convex structure.
所述第一塑封料和第二塑封料采用有填料或无填料的环氧树脂。The first molding compound and the second molding compound are filled or unfilled epoxy resins.
一种堆叠式封装结构的工艺方法,所述方法包括以下步骤:A process method for a stacked packaging structure, the method comprising the following steps:
步骤一、取第一金属基板;Step 1, taking the first metal substrate;
步骤二、在第一金属基板正面及背面分别贴上可进行曝光显影的光阻膜,利用曝光显影设备将金属基板正面进行图形曝光、显影与去除部分图形光阻膜,以露出第一金属基板正面后续需要进行蚀刻的区域图形,对第一金属基板进行蚀刻,形成第一铜柱;Step 2: Paste photoresist films that can be exposed and developed on the front and back of the first metal substrate respectively, and use exposure and development equipment to perform pattern exposure, development and removal of part of the pattern photoresist film on the front of the metal substrate to expose the first metal substrate Etching the first metal substrate to form the first copper pillar in the area pattern that needs to be etched subsequently on the front side;
步骤三、在步骤二的第一金属基板正面贴上可进行曝光显影的光阻膜,利用曝光显影设备将第一金属基板正面再次进行图形曝光、显影与去除部分图形光阻膜,以露出第一金属基板正面后续需要进行蚀刻的区域图形,对第一金属基板进行蚀刻,形成第一线路图案,去除第一金属基板表面的光阻膜;Step 3: Paste a photoresist film that can be exposed and developed on the front of the first metal substrate in step 2, and use the exposure and development equipment to perform graphic exposure, development and removal of part of the graphic photoresist film on the front of the first metal substrate again to expose the first metal substrate. A region pattern to be subsequently etched on the front of the metal substrate, etching the first metal substrate to form a first circuit pattern, and removing the photoresist film on the surface of the first metal substrate;
步骤四、将芯片设置于步骤三中完成蚀刻的第一金属基板上,芯片与第一线路图案实现电性连接,再对第一金属基板正面进行环氧树脂塑封保护,形成第一塑封料,第一塑封料上表面高出第一铜柱的上表面;Step 4. Place the chip on the first metal substrate that has been etched in step 3. The chip is electrically connected to the first circuit pattern, and then the front side of the first metal substrate is protected by epoxy resin molding to form a first molding compound. The upper surface of the first plastic encapsulant is higher than the upper surface of the first copper pillar;
步骤五、在第一塑封料对应第一铜柱的位置进行开孔,暴露出第一铜柱;Step 5, opening a hole at the position corresponding to the first copper pillar in the first plastic encapsulant to expose the first copper pillar;
步骤六、对第一金属基板的下表面进行减薄,实现第一线路图案与第一铜柱的分离,从而形成第一封装体;Step 6, thinning the lower surface of the first metal substrate to separate the first circuit pattern from the first copper pillar, thereby forming a first package;
步骤七、取第二金属基板;Step 7, taking the second metal substrate;
步骤八、在步骤七的第二金属基板上设置第二芯片,第二芯片与第二金属基板实现电性连接,再对第二金属基板正面进行环氧树脂塑封保护,形成第二塑封料;Step 8, setting a second chip on the second metal substrate in step 7, the second chip is electrically connected to the second metal substrate, and then performing epoxy resin plastic sealing protection on the front of the second metal substrate to form a second plastic packaging compound;
步骤九、对步骤八完成包封的第二金属基板背面贴上可进行曝光显影的光阻膜,利用曝光显影设备将第二金属基板背面进行图形曝光、显影与去除部分图形光阻膜,以露出第二金属基板背面后续需要进行蚀刻的区域图形,对第二金属基板进行蚀刻,形成第二铜柱;Step 9: Paste a photoresist film that can be exposed and developed on the back of the second metal substrate that has been encapsulated in step 8, and use the exposure and development equipment to perform pattern exposure, development and removal of part of the pattern photoresist film on the back of the second metal substrate to Exposing the pattern of the area on the back of the second metal substrate that needs to be etched subsequently, etching the second metal substrate to form a second copper pillar;
步骤十、在步骤六形成的第一封装体的第一塑封料的开孔内放置锡球,将步骤九中形成的第二封装体和第一封装体合在一起,使第二封装体下表面的第二铜柱插入第一封装体的第一塑封料上表面的开孔内;Step 10. Place solder balls in the opening of the first molding compound of the first package formed in step 6, and combine the second package formed in step 9 with the first package, so that the second package Inserting the second copper pillar on the surface into the opening on the upper surface of the first plastic molding compound of the first package;
步骤十一、进行回流焊,使第二封装体下表面的第二铜柱通过锡球与第一封装体的第一铜柱形成电性连接;Step eleven, performing reflow soldering, so that the second copper pillar on the lower surface of the second package is electrically connected to the first copper pillar of the first package through solder balls;
步骤十二、将步骤十一完成封装体堆叠的半成品进行切割作业,制得堆叠式封装结构。Step 12: Cutting the semi-finished product stacked in step 11 to obtain a stacked package structure.
与现有技术相比,本发明的优点在于:Compared with the prior art, the present invention has the advantages of:
1、本发明第一封装体的铜柱11和第二封装体的铜柱12在开孔内通过锡球形成电性连接,金属柱接触金属球,使回焊时的融接处仅发生于开孔中金属柱接触端,融接处位于开孔中,所以能避免发生桥接现象,以提升产品的良率,且能满足细间距的需求;1. The copper pillars 11 of the first package and the copper pillars 12 of the second package of the present invention are electrically connected through solder balls in the openings, and the metal pillars contact the metal balls, so that the fusion during reflow occurs only at the The contact end of the metal post in the hole, the fusion joint is located in the hole, so the bridging phenomenon can be avoided to improve the yield of the product, and can meet the needs of fine pitch;
2、本发明在回焊时由于金属柱的支撑,封装高度的公差小,接点不易产生缺陷,共面性(coplanarity)良好,易于控制产品高度,不倾斜。2. Due to the support of the metal pillars during reflow, the present invention has a small package height tolerance, less likely to produce defects in the joints, good coplanarity, easy to control the height of the product, and no inclination.
附图说明Description of drawings
图1为现有POP封装结构的示意图。FIG. 1 is a schematic diagram of an existing POP packaging structure.
图2为本发明一种堆叠式封装结构的示意图。FIG. 2 is a schematic diagram of a package-on-package structure of the present invention.
图3~图13为本发明一种堆叠式封装结构的工艺流程图。3 to 13 are process flow charts of a stacked packaging structure of the present invention.
图14、图15为本发明一种堆叠式封装结构另一实施例的示意图。14 and 15 are schematic diagrams of another embodiment of a package-on-package structure of the present invention.
其中:in:
第一封装体1First Package 1
第二封装体2Second Package 2
第一铜柱11First Copper Pillar 11
第二铜柱12The second copper pillar 12
锡球13Solder ball 13
第一基板14first substrate 14
第一线路图案15First line pattern 15
第一芯片16first chip 16
第一塑封料17First Molding Compound 17
开孔18Hole 18
第二基板19second substrate 19
第二芯片 20second chip 20
第二塑封料 21。Second molding compound 21.
具体实施方式Detailed ways
以下结合附图实施例对本发明作进一步详细描述。The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.
如图2所示,本实施例中的一种堆叠式封装结构,它包括第一封装体1和第二封装体2,所述第一封装体1包括第一基板14和第一芯片16,所述第一基板14包括第一线路图案15和第一铜柱11,所述第一线路图案15上设置有第一芯片16,所述第一芯片16与第一线路图案15实现电性连接,所述第一基板14上方设置有第一塑封料17,所述第一塑封料17上表面对应第一铜柱11的位置设置有开孔18,所述第一铜柱11顶部暴露在第一塑封料17上表面的开孔18内,所述第一铜柱11顶部设置有锡球13,所述第二封装体2包括第二基板19、第二芯片20和第二塑封料21,所述第二基板19下表面上设置有第二铜柱12,所述第二铜柱12插装于第一塑封料17上的开孔18中,并通过锡球13与第一铜柱11形成电性连接。As shown in FIG. 2, a package-on-package structure in this embodiment includes a first package body 1 and a second package body 2, and the first package body 1 includes a first substrate 14 and a first chip 16, The first substrate 14 includes a first circuit pattern 15 and a first copper pillar 11, the first circuit pattern 15 is provided with a first chip 16, and the first chip 16 is electrically connected to the first circuit pattern 15 A first molding compound 17 is provided above the first substrate 14, and an opening 18 is provided on the upper surface of the first molding compound 17 corresponding to the position of the first copper pillar 11, and the top of the first copper pillar 11 is exposed at the In the opening 18 on the upper surface of a molding compound 17, the top of the first copper pillar 11 is provided with a solder ball 13, and the second package body 2 includes a second substrate 19, a second chip 20 and a second molding compound 21, The second copper column 12 is arranged on the lower surface of the second substrate 19, and the second copper column 12 is inserted into the opening 18 on the first molding compound 17, and is connected to the first copper column 11 by the solder ball 13. form an electrical connection.
其工艺步骤如下:Its process steps are as follows:
步骤一、参见图3,取第一金属基板;Step 1, see Figure 3, take the first metal substrate;
步骤二、参见图4,在第一金属基板正面及背面分别贴上可进行曝光显影的光阻膜,利用曝光显影设备将金属基板正面进行图形曝光、显影与去除部分图形光阻膜,以露出第一金属基板正面后续需要进行蚀刻的区域图形,对第一金属基板进行蚀刻,形成第一铜柱;Step 2. Referring to FIG. 4, attach a photoresist film that can be exposed and developed on the front and back of the first metal substrate, and use the exposure and development equipment to perform pattern exposure, development and removal of part of the pattern photoresist film on the front of the metal substrate to expose Etching the first metal substrate to form the first copper pillar by etching the pattern of the region that needs to be etched subsequently on the front of the first metal substrate;
步骤三、参见图5,在步骤二的第一金属基板正面贴上可进行曝光显影的光阻膜,利用曝光显影设备将第一金属基板正面再次进行图形曝光、显影与去除部分图形光阻膜,以露出第一金属基板正面后续需要进行蚀刻的区域图形,对第一金属基板进行蚀刻,形成第一线路图案,去除第一金属基板表面的光阻膜;Step 3, see Figure 5, paste a photoresist film that can be exposed and developed on the front of the first metal substrate in step 2, and use the exposure and development equipment to perform graphic exposure, development and removal of part of the graphic photoresist film on the front of the first metal substrate again Etching the first metal substrate to form a first circuit pattern and removing the photoresist film on the surface of the first metal substrate to expose the pattern of the area on the front surface of the first metal substrate that needs to be etched subsequently;
步骤四、参见图6,将芯片设置于步骤三中完成蚀刻的第一金属基板上,芯片与第一线路图案实现电性连接,再对第一金属基板正面进行环氧树脂塑封保护,形成第一塑封料,第一塑封料上表面高出第一铜柱的上表面,环氧树脂材料可以依据产品特性选择有填料或是没有填料的种类;Step 4, see Figure 6, set the chip on the first metal substrate etched in step 3, the chip is electrically connected to the first circuit pattern, and then the front of the first metal substrate is protected by epoxy resin molding to form the second A molding compound, the upper surface of the first molding compound is higher than the upper surface of the first copper pillar, and the epoxy resin material can be selected according to product characteristics with filler or without filler;
步骤五、参见图7,在第一塑封料对应第一铜柱的位置进行开孔,目的是暴露出第一铜柱;Step 5. Referring to Figure 7, make a hole at the position where the first plastic encapsulant corresponds to the first copper pillar, in order to expose the first copper pillar;
步骤六、参见图8,对第一金属基板的下表面进行减薄,目的是为了实现第一线路图案与第一铜柱的分离,从而形成第一封装体;Step 6, referring to FIG. 8 , thinning the lower surface of the first metal substrate in order to realize the separation of the first circuit pattern and the first copper pillar, thereby forming the first package;
步骤七、参见图9,取第二金属基板;Step 7, see Figure 9, take the second metal substrate;
步骤八、参见图10,在步骤七的第二金属基板上设置第二芯片,第二芯片与第二金属基板实现电性连接,再对第二金属基板正面进行环氧树脂塑封保护,形成第二塑封料,环氧树脂材料可以依据产品特性选择有填料或是没有填料的种类;Step 8, see Figure 10, set the second chip on the second metal substrate in step 7, realize electrical connection between the second chip and the second metal substrate, and then carry out epoxy resin plastic sealing protection on the front of the second metal substrate to form the second 2. Molding compound, epoxy resin material can choose the type with filler or without filler according to the product characteristics;
步骤九、参见图11,对步骤八完成包封的第二金属基板背面贴上可进行曝光显影的光阻膜,利用曝光显影设备将第二金属基板背面进行图形曝光、显影与去除部分图形光阻膜,以露出第二金属基板背面后续需要进行蚀刻的区域图形,对第二金属基板进行蚀刻,形成第二铜柱;Step 9, see Figure 11, paste a photoresist film that can be exposed and developed on the back of the second metal substrate that has been encapsulated in step 8, and use the exposure and developing equipment to perform graphic exposure, development and removal of part of the graphic light on the back of the second metal substrate The resist film is used to expose the pattern of the area on the back of the second metal substrate that needs to be etched subsequently, and the second metal substrate is etched to form the second copper pillar;
步骤十、参见图12,在步骤六形成的第一封装体的第一塑封料的开孔内放置锡球,将步骤九中形成的第二封装体和第一封装体合在一起,使第二封装体下表面的第二铜柱插入第一封装体的第一塑封料上表面的开孔内;Step 10. Referring to FIG. 12, place solder balls in the opening of the first molding compound of the first package formed in step 6, and combine the second package formed in step 9 with the first package to make the first package Inserting the second copper post on the lower surface of the second package into the opening on the upper surface of the first plastic molding compound of the first package;
步骤十一、参见图13,进行回流焊,使第二封装体下表面的第二铜柱通过锡球与第一封装体的第一铜柱形成电性连接;Step 11. Referring to FIG. 13 , perform reflow soldering so that the second copper pillar on the lower surface of the second package is electrically connected to the first copper pillar of the first package through solder balls;
步骤十二、将步骤十一完成封装体堆叠的半成品进行切割作业,制得堆叠式封装结构。Step 12: Cutting the semi-finished product stacked in step 11 to obtain a stacked package structure.
如图14、图15所示,为本发明一种堆叠式封装结构的另一实施例,它包括第一封装体1和第二封装体2,所述第一封装体1内的第一铜柱11顶部呈凸形结构,所述第二封装体2下表面第二铜柱12顶部呈凸形结构,所述第二铜柱12插装于第一塑封料17上的开孔18中,并通过锡球13与第一铜柱11形成电性连接,由于第一铜柱顶部和第二铜柱顶部呈凸形结构,在回流焊时,焊料会完全包覆住铜柱上的凸点,通过焊料对其包覆的凸点的抓附力,可以进一步加强第一封装体和第二封装体之间的结合力。As shown in Figure 14 and Figure 15, it is another embodiment of a stacked package structure of the present invention, which includes a first package body 1 and a second package body 2, the first copper in the first package body 1 The top of the column 11 has a convex structure, the top of the second copper column 12 on the lower surface of the second package body 2 has a convex structure, and the second copper column 12 is inserted into the opening 18 on the first molding compound 17, And form an electrical connection with the first copper pillar 11 through the solder ball 13, because the top of the first copper pillar and the top of the second copper pillar have a convex structure, during reflow soldering, the solder will completely cover the bump on the copper pillar , the bonding force between the first package and the second package can be further strengthened through the gripping force of the solder covering the bumps.
除上述实施例外,本发明还包括有其他实施方式,凡采用等同变换或者等效替换方式形成的技术方案,均应落入本发明权利要求的保护范围之内。In addition to the above-mentioned embodiments, the present invention also includes other implementations, and any technical solution formed by equivalent transformation or equivalent replacement shall fall within the protection scope of the claims of the present invention.
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