CN105742195A - Manufacturing method for etching buried hole-type surface sound filter chip packaging structure - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 15
- 238000005530 etching Methods 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000003292 glue Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000005520 cutting process Methods 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 76
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 9
- 238000011161 development Methods 0.000 claims description 8
- 238000000206 photolithography Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000001914 filtration Methods 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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Abstract
本发明涉及一种蚀刻埋孔型表面声滤波芯片封装结构的制造方法，所述方法包括以下步骤：步骤一、取一片表面声滤波芯片晶圆；步骤二、在表面声滤波芯片晶圆的电极区域制备第一金属层；步骤三、制备绝缘层；步骤四、贴合晶圆开孔并进行贴合；步骤五、埋孔用导电胶或电镀金属埋入开孔内；步骤六，制备第二金属层在步骤五开孔内埋入的导电胶或电镀金属的表面制备第二金属层；步骤七、植球在第二金属层表面进行植球；步骤八、切割切割分成单颗产品。本发明一种蚀刻埋孔型表面声滤波芯片封装结构的制造方法，它能提供一种更小面积和体积的表面声滤波器件，具有更低的制造成本。
The invention relates to a manufacturing method of etching a buried hole type surface acoustic filter chip packaging structure. The method comprises the following steps: step 1, taking a piece of surface acoustic filter chip wafer; step 2, placing an electrode on the surface acoustic filter chip wafer Prepare the first metal layer in the area; step 3, prepare the insulating layer; step 4, attach the wafer opening and bond it; step 5, bury the hole in the opening with conductive glue or electroplated metal; step 6, prepare the second The second metal layer prepares the second metal layer on the surface of the conductive glue or electroplated metal embedded in the opening in step five; step seven, planting balls on the surface of the second metal layer; step eight, cutting and cutting into individual products. The invention relates to a method for manufacturing an encapsulation structure of an etched buried hole type surface acoustic filter chip, which can provide a surface acoustic filter device with a smaller area and volume, and has lower manufacturing cost.
Description
技术领域 technical field
本发明涉及一种蚀刻埋孔型表面声滤波芯片封装结构的制造方法，属于半导体封装技术领域。 The invention relates to a method for manufacturing an encapsulation structure of an etched buried hole type surface acoustic filter chip, belonging to the technical field of semiconductor encapsulation.
背景技术 Background technique
表面声滤波设备广泛用于RF和IF应用，其中包括便携式电话机、无线电话机、以及各种无线电装置。通过使用表面声滤波，对这些电子设备进行电信号的滤波、延时等处理。因表面声滤器产品性能和设计功能需求，需要保证滤波芯片功能区域不能接触任何物质，即空腔结构设计。 Surface acoustic filtering devices are widely used in RF and IF applications, including cellular phones, radiotelephones, and various radios. Through the use of surface acoustic filtering, these electronic devices are processed by filtering and delaying electrical signals. Due to the product performance and design functional requirements of the surface acoustic filter, it is necessary to ensure that the functional area of the filter chip cannot touch any substance, that is, the cavity structure design.
现有的表面声滤波器件封装结构是将滤波芯片通过导电凸块倒装焊与陶瓷基板相连并完全嵌于基材腔体内，基板表面加金属盖保护。但是此种结构金属盖的成本较高，而且陶瓷基板与金属盖的平整度要求比较高，容易有封闭不良的情况。另外其他表面声滤波器件的制作方法是使用顶部密封或包膜工艺对模块加以密封，形成空腔结构。 In the existing surface acoustic filter device packaging structure, the filter chip is connected to the ceramic substrate through conductive bump flip-chip welding and completely embedded in the cavity of the substrate, and the surface of the substrate is protected by a metal cover. However, the cost of the metal cover of this structure is relatively high, and the flatness requirements of the ceramic substrate and the metal cover are relatively high, which is prone to poor sealing. In addition, other manufacturing methods of surface acoustic filter devices use top sealing or coating process to seal the module to form a cavity structure.
现有的表面声滤波器件的封装方法，流程较长，成本较高，且结构尺寸还是比较大，在目前电子设备越做越小的潮流趋势下，需要不断减小电子装置及其中所使用的表面声滤波器件的重量和尺寸。 The existing packaging method of surface acoustic filter devices has a long process, high cost, and relatively large structural size. Under the current trend of electronic equipment becoming smaller and smaller, it is necessary to continuously reduce the size of electronic devices and the components used in them. Weight and dimensions of surface acoustic filter components.
发明内容 Contents of the invention
本发明所要解决的技术问题是针对上述现有技术提供一种蚀刻埋孔型表面声滤波芯片封装结构的制造方法，它能提供一种更小面积和体积的表面声滤波器件，并且具有更低的制造成本。 The technical problem to be solved by the present invention is to provide a method for manufacturing an etched buried hole type surface acoustic filter chip packaging structure for the above-mentioned prior art, which can provide a surface acoustic filter device with a smaller area and volume, and has a lower manufacturing cost.
本发明解决上述问题所采用的技术方案为：一种蚀刻埋孔型表面声滤波芯片封装结构的制造方法，所述方法包括以下工艺步骤： The technical solution adopted by the present invention to solve the above problems is: a method for manufacturing the encapsulation structure of an etched buried-hole type surface acoustic filter chip, the method comprising the following process steps:
步骤一、取一片表面声滤波芯片晶圆； Step 1. Take a surface acoustic filter chip wafer;
步骤二、在表面声滤波芯片晶圆的电极区域制备第一金属层； Step 2, preparing the first metal layer in the electrode region of the surface acoustic filter chip wafer;
步骤三、制备绝缘层 Step 3. Prepare the insulating layer
用涂胶工艺在表面声滤波芯片晶圆上涂一层一定厚度的绝缘胶，用光刻，显影的方法将电极区域和芯片感应区域位置的绝缘胶去除； Apply a layer of insulating glue with a certain thickness on the surface acoustic filter chip wafer by glue coating process, and remove the insulating glue in the electrode area and the sensing area of the chip by photolithography and development;
步骤四、贴合晶圆开孔并进行贴合 Step 4: Bonding wafer openings and bonding
取一片贴合晶圆，先将贴合晶圆对应于表面声滤波芯片晶圆的电极上方的位置进行开孔，然后将已经完成开孔的贴合晶圆通过粘合胶与表面声滤波芯片晶圆贴合在一起，，从而在芯片感应区域上方形成空腔； Take a piece of bonded wafer, first make a hole on the bonded wafer corresponding to the position above the electrode of the surface acoustic filter chip wafer, and then pass the bonded wafer that has been drilled through the adhesive glue and the surface acoustic filter chip The wafers are bonded together to form a cavity above the sensing area of the chip;
步骤五、埋孔 Step 5. Buried holes
用导电胶或电镀金属埋入开孔内； Embed in the opening with conductive glue or electroplated metal;
步骤六，制备第二金属层 Step 6, preparing the second metal layer
在步骤五开孔内埋入的导电胶或电镀金属的表面制备第二金属层； Prepare a second metal layer on the surface of the conductive glue or electroplated metal embedded in the opening in step five;
步骤七、切割 Step 7. Cutting
切割分成单颗产品。 Cut into individual products.
一种蚀刻埋孔型表面声滤波芯片封装结构的制造方法，所述方法包括以下工艺步骤： A method for manufacturing an etched buried-hole type surface acoustic filter chip packaging structure, said method comprising the following process steps:
步骤一、取一片表面声滤波芯片晶圆； Step 1. Take a surface acoustic filter chip wafer;
步骤二、在表面声滤波芯片晶圆的电极区域制备第一金属层； Step 2, preparing the first metal layer in the electrode region of the surface acoustic filter chip wafer;
步骤三、制备绝缘层 Step 3. Prepare the insulating layer
用涂胶工艺在表面声滤波芯片晶圆上涂一层一定厚度的绝缘胶，用光刻，显影的方法将电极区域和芯片感应区域位置的绝缘胶去除； Apply a layer of insulating glue with a certain thickness on the surface acoustic filter chip wafer by glue coating process, and remove the insulating glue in the electrode area and the sensing area of the chip by photolithography and development;
步骤四、半蚀刻贴合晶圆并进行贴合 Step 4. Half-etching and bonding the wafer and bonding
取一片贴合晶圆，先将贴合晶圆对应于表面声滤波芯片晶圆的电极上方的位置进行半蚀刻开孔，然后将已经完成半蚀刻的贴合晶圆通过粘合胶与表面声滤波芯片晶圆贴合在一起，从而在芯片感应区域上方形成空腔； Take a piece of bonded wafer, first half-etch and open the bonded wafer corresponding to the position above the electrode of the surface acoustic filter chip wafer, and then pass the bonded wafer that has been half-etched through the adhesive glue and the surface acoustic wave. The filter chip wafers are bonded together to form a cavity above the sensing area of the chip;
步骤五、减薄 Step five, thinning
将贴合晶圆进行研磨、减薄至贴合晶圆半蚀刻的位置，以露出开孔； Grinding and thinning the bonded wafer to the half-etched position of the bonded wafer to expose the opening;
步骤六、埋孔 Step 6. Buried holes
用导电胶或电镀金属埋入开孔内； Embed in the opening with conductive glue or electroplated metal;
步骤七，制备第二金属层 Step 7, preparing the second metal layer
在步骤六开孔内埋入的导电胶或电镀金属的表面制备第二金属层； Prepare a second metal layer on the surface of the conductive glue or electroplated metal embedded in the opening in step six;
步骤八、切割 Step 8. Cutting
切割分成单颗产品。 Cut into individual products.
所述步骤七与步骤八之间对第二金属层表面进行植球。 Ball planting is carried out on the surface of the second metal layer between the step 7 and the step 8.
所述绝缘层采用B-stage胶，可不需要在贴合晶圆上涂粘合胶，直接进行贴合。 The insulating layer adopts B-stage glue, which can be directly bonded without applying adhesive glue on the bonded wafers.
所述贴合晶圆采用玻璃材料、绝缘材料。 The bonded wafer is made of glass material and insulating material.
与现有技术相比，本发明的优点在于： Compared with the prior art, the present invention has the advantages of:
1、与传统的工艺相比，整体生产流程是晶圆级的，能形成小尺寸的封装结构，而且工艺简单，能保证芯片感应区的空腔结构，能形成可靠性较高的蚀刻埋孔型表面声滤波芯片封装结构； 1. Compared with the traditional process, the overall production process is at the wafer level, which can form a small-sized packaging structure, and the process is simple, which can ensure the cavity structure of the chip sensing area and form a highly reliable etched buried hole Type surface acoustic filter chip packaging structure;
2、本发明的蚀刻埋孔型表面声滤波芯片封装结构可以直接使用，也可以将整个结构和其他封装结构在基板上形成二次封装，形成系统级封装。 2. The encapsulation structure of the etched-buried-hole type surface acoustic filter chip of the present invention can be used directly, or the entire structure and other encapsulation structures can be packaged on the substrate for secondary encapsulation to form a system-level encapsulation.
附图说明 Description of drawings
图1为本发明一种蚀刻埋孔型表面声滤波芯片封装结构的示意图。 FIG. 1 is a schematic diagram of a packaging structure of an etched buried hole type surface acoustic filter chip according to the present invention.
图2~图9为本发明一种蚀刻埋孔型表面声滤波芯片封装结构的制造方法实施例一的工艺流程图。 2 to 9 are process flow charts of Embodiment 1 of a manufacturing method for etching a buried-hole type surface acoustic filter chip packaging structure according to the present invention.
图10~图18为本发明一种蚀刻埋孔型表面声滤波芯片封装结构的制造方法实施例二的工艺流程图。 10 to 18 are process flow charts of Embodiment 2 of a method for manufacturing a package structure of an etched buried-hole type surface acoustic filter chip according to the present invention.
其中： in:
表面声滤波芯片晶圆1 Surface Acoustic Filter Chip Wafer 1
电极区域1.1 Electrode area 1.1
感应区域1.2 Sensing area 1.2
第一金属层2 first metal layer 2
绝缘层3 Insulation layer 3
贴合晶圆4 Bonded Wafer 4
粘合胶5 Adhesive 5
金属球6 metal ball 6
空腔7 Cavity 7
开孔8 Hole 8
导电胶或电镀金属9 Conductive glue or plated metal9
第二金属层10。 The second metal layer 10.
具体实施方式 detailed description
以下结合附图实施例对本发明作进一步详细描述。 The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.
如图1所示，本实施例中的一种蚀刻埋孔型表面声滤波芯片封装结构，它包括表面声滤波芯片晶圆1，所述表面声滤波芯片晶圆1表面包括电极区域1.1和感应区域1.2，所述电极区域1.1表面设置有第一金属层2，所述表面声滤波芯片晶圆1除电极区域1.1和感应区域1.2外的区域设置有绝缘层3，所述绝缘层3上方通过粘合胶5设置有贴合晶圆4，所述贴合晶圆4与感应区域1.2之间形成空腔7，所述贴合晶圆4在电极区域1.1位置处设置有开孔8，所述开孔8内填充有导电胶或电镀金属9，所述导电胶或电镀金属9的表面设置有第二金属层10。 As shown in Figure 1, a package structure of etched and buried surface acoustic filter chip in this embodiment includes a surface acoustic filter chip wafer 1, and the surface of the surface acoustic filter chip wafer 1 includes an electrode area 1.1 and a sensor Area 1.2, the surface of the electrode area 1.1 is provided with a first metal layer 2, and the area of the surface acoustic filter chip wafer 1 except the electrode area 1.1 and the sensing area 1.2 is provided with an insulating layer 3, above which the insulating layer 3 passes The adhesive 5 is provided with a bonded wafer 4, a cavity 7 is formed between the bonded wafer 4 and the sensing area 1.2, and the bonded wafer 4 is provided with an opening 8 at the position of the electrode area 1.1, so The opening 8 is filled with conductive glue or electroplated metal 9 , and the surface of the conductive glue or electroplated metal 9 is provided with a second metal layer 10 .
所述第二金属层10上设置有金属球6。 Metal balls 6 are disposed on the second metal layer 10 .
实施例一： Embodiment one:
一种蚀刻埋孔型表面声滤波芯片封装结构的制造方法，它包括以下工艺步骤： A method for manufacturing a package structure of an etched buried hole type surface acoustic filter chip, comprising the following process steps:
步骤一、参见图2，取一片表面声滤波芯片晶圆； Step 1, see Figure 2, take a surface acoustic filter chip wafer;
步骤二、参见图3，在表面声滤波芯片晶圆的电极区域制备第一金属层； Step 2, referring to Fig. 3, preparing the first metal layer in the electrode region of the surface acoustic filter chip wafer;
表面声滤波芯片晶圆通过清洗，烘烤，溅射，涂光刻胶，光刻，显影，电镀铜层，去光刻胶，蚀刻的方法在电极区域制备第一金属层； The surface acoustic filter chip wafer is cleaned, baked, sputtered, coated with photoresist, photoetched, developed, copper plated, photoresist removed, and etched to prepare the first metal layer in the electrode area;
步骤三、制备绝缘层 Step 3. Prepare the insulating layer
参见图4，用涂胶工艺在表面声滤波芯片晶圆上涂一层一定厚度的绝缘胶，如PI（聚酰亚胺）、PA(尼龙，聚酰胺)，用光刻，显影的方法将电极区域和芯片感应区域位置的绝缘胶去除； Referring to Figure 4, apply a layer of insulating glue of a certain thickness on the surface acoustic filter chip wafer with the glue coating process, such as PI (polyimide), PA (nylon, polyamide), and use photolithography and development to paint Removal of the insulating glue in the electrode area and the sensing area of the chip;
步骤四、贴合晶圆开孔并进行贴合 Step 4: Bonding wafer openings and bonding
参见图5，取一片贴合晶圆，先将贴合晶圆对应于表面声滤波芯片晶圆的电极上方的位置进行开孔，然后将已经完成开孔的贴合晶圆通过粘合胶与表面声滤波芯片晶圆贴合在一起，从而在芯片感应区域上方形成空腔； Referring to Fig. 5, take a piece of bonded wafer, firstly make a hole on the bonded wafer corresponding to the position above the electrode of the surface acoustic filter chip wafer, and then connect the bonded wafer that has been holed through the adhesive glue The surface acoustic filter chip wafers are bonded together to form a cavity above the sensing area of the chip;
步骤五、埋孔 Step 5. Buried holes
参见图6，用导电胶或电镀金属埋入开孔内； See Figure 6, use conductive glue or electroplated metal to bury in the opening;
步骤六，制备第二金属层 Step 6, preparing the second metal layer
参见图7，通过清洗，烘烤，溅射，涂光刻胶，光刻，显影，电镀铜层，去光刻胶，蚀刻的方法在导电胶或电镀金属的表面制备第二金属层； Referring to Fig. 7, prepare the second metal layer on the surface of the conductive glue or electroplated metal by cleaning, baking, sputtering, coating photoresist, photolithography, development, electroplating copper layer, removing photoresist, and etching;
步骤七、植球 Step 7. Plant the ball
参见图8，在第二金属层表面进行植球； Referring to Figure 8, ball planting is performed on the surface of the second metal layer;
步骤八、切割 Step 8. Cutting
参见图9，切割分成单颗产品。 See Figure 9, cut into individual products.
上述步骤中，步骤七可以省略； Among the above steps, step seven can be omitted;
上述步骤中，所述绝缘层可以是B-stage胶，胶体加热后熔融，此时可以不需要在贴合晶圆上涂粘合胶，直接进行贴合； In the above steps, the insulating layer can be B-stage glue, which melts after being heated. At this time, it is not necessary to apply adhesive glue on the bonded wafers, and directly bond them;
所述贴合晶圆采用玻璃材料或其他绝缘材料； The bonded wafer is made of glass material or other insulating materials;
实施例二： Embodiment two:
一种蚀刻埋孔型表面声滤波芯片封装结构的制造方法，它包括以下工艺步骤： A method for manufacturing a package structure of an etched buried hole type surface acoustic filter chip, comprising the following process steps:
步骤一、参见图10，取一片表面声滤波芯片晶圆； Step 1, see Figure 10, take a surface acoustic filter chip wafer;
步骤二、参见图11，在表面声滤波芯片晶圆的电极区域制备第一金属层； Step 2, referring to FIG. 11 , preparing the first metal layer in the electrode region of the surface acoustic filter chip wafer;
表面声滤波芯片晶圆通过清洗，烘烤，溅射，涂光刻胶，光刻，显影，电镀铜层，去光刻胶，蚀刻的方法在电极区域制备第一金属层； The surface acoustic filter chip wafer is cleaned, baked, sputtered, coated with photoresist, photoetched, developed, copper plated, photoresist removed, and etched to prepare the first metal layer in the electrode area;
步骤三、制备绝缘层 Step 3. Prepare the insulating layer
参见图12，用涂胶工艺在表面声滤波芯片晶圆上涂一层一定厚度的绝缘胶，如PI（聚酰亚胺）、PA(尼龙，聚酰胺)，用光刻，显影的方法将电极区域和芯片感应区域位置的绝缘胶去除； Referring to Figure 12, apply a certain thickness of insulating glue on the surface acoustic filter chip wafer with the glue coating process, such as PI (polyimide), PA (nylon, polyamide), and use photolithography and development to paint Removal of the insulating glue in the electrode area and the sensing area of the chip;
步骤四、半蚀刻贴合晶圆并进行贴合 Step 4. Half-etching and bonding the wafer and bonding
参见图13，取一片贴合晶圆，先将贴合晶圆对应于表面声滤波芯片晶圆的电极上方的位置进行半蚀刻开孔，然后将已经完成半蚀刻的贴合晶圆通过粘合胶与表面声滤波芯片晶圆贴合在一起，从而在芯片感应区域上方形成空腔； Referring to Figure 13, take a piece of bonded wafer, first half-etch and open holes on the bonded wafer corresponding to the position above the electrode of the surface acoustic filter chip wafer, and then pass the bonded wafer that has been half-etched The glue is bonded to the surface acoustic filter chip wafer to form a cavity above the sensing area of the chip;
步骤五、减薄 Step five, thinning
参见图14，将贴合晶圆进行研磨、减薄至贴合晶圆半蚀刻的位置，以露出开孔； Referring to Figure 14, the bonded wafer is ground and thinned to the half-etched position of the bonded wafer to expose the opening;
步骤六、埋孔 Step 6. Buried holes
参见图15，用导电胶或电镀金属埋入开孔内； See Figure 15, use conductive glue or electroplated metal to bury in the opening;
步骤七，制备第二金属层 Step 7, preparing the second metal layer
参见图16，通过清洗，烘烤，溅射，涂光刻胶，光刻，显影，电镀铜层，去光刻胶，蚀刻的方法在导电胶或电镀金属的表面制备第二金属层； Referring to Figure 16, the second metal layer is prepared on the surface of the conductive glue or electroplated metal by cleaning, baking, sputtering, coating photoresist, photolithography, development, electroplating copper layer, removing photoresist, and etching;
步骤八、植球 Step 8. Plant the ball
参见图17，在第二金属层表面进行植球； Referring to Figure 17, ball planting is performed on the surface of the second metal layer;
步骤九、切割 Step 9. Cutting
参见图18，切割分成单颗产品。 See Figure 18, cut into individual products.
上述步骤中，步骤八可以省略。 Among the above steps, step eight can be omitted.
除上述实施例外，本发明还包括有其他实施方式，凡采用等同变换或者等效替换方式形成的技术方案，均应落入本发明权利要求的保护范围之内。 In addition to the above-mentioned embodiments, the present invention also includes other implementations, and any technical solution formed by equivalent transformation or equivalent replacement shall fall within the protection scope of the claims of the present invention.
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