CN105729298A - De-bonding method of retainer ring used for chemical mechanical polish - Google Patents
De-bonding method of retainer ring used for chemical mechanical polish Download PDFInfo
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- CN105729298A CN105729298A CN201410764453.1A CN201410764453A CN105729298A CN 105729298 A CN105729298 A CN 105729298A CN 201410764453 A CN201410764453 A CN 201410764453A CN 105729298 A CN105729298 A CN 105729298A
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- retaining ring
- basal disc
- stripping means
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Abstract
The invention provides a de-bonding method of a retainer ring used for chemical mechanical polish. A retaining ring comprises a basal disc and a resin ring. The basal disc and the resin ring are arranged along the axis direction and bonded by adhesive. The de-bonding method comprises the steps of heating the retainer ring until the adhesive softens and de-bonding the basal disc and the resin ring by external force. The de-bonded basal disc can be recycled, so that raw materials can be saved.
Description
Technical field
The present invention relates to stripping (de-bongding) method of the cmp of a kind of semiconductor production (CMP) retaining ring (RetainerRing).
Background technology
Chemically mechanical polishing (Chemicalmechanicalpolish, CMP) technology is to prepare the committed step of wafer, and this technology disclosure satisfy that necessary strict technology controlling and process time prepared by wafer, and obtains the wafer finished product of high-quality surface topography.
At present, in order to increase chip output, reducing manufacturing cost, brilliant diameter of a circle constantly increases；It addition, for the integrated level improving integrated circuit, the line width of wafer is more and more less, the required precision of crystal column surface is more and more higher.It is the wafer of more than 150mm for diameter, during grinding, easily forms overground phenomenon at crystal round fringes, cause that wafer quality reduces.
Prior art adopts the method adding a retaining ring outside wafer to solve this problem.Retaining ring generally comprises basal disc and the resin ring of bonding mutually, and during grinding, resin ring contacts with grinding pad.Owing to resin ring can be worn in grinding technics, cause that it can not meet technological requirement, therefore for used retaining ring, usual directly scrap process, do not recycle.But basal disc now is likely to also not be worn, directly abandoning retaining ring and mean to discard together with basal disc, this causes raw-material a large amount of waste.
Summary of the invention
The problem that this invention address that is that used retaining ring is directly scrapped by existing technique, causes raw-material waste.
For solving the problems referred to above, the present invention provides the stripping means of a kind of cmp retaining ring, and described retaining ring includes axially aligned basal disc and resin ring, bonding by solid between described basal disc and resin ring；Including:
By retaining ring heating to described solid softening；
Described basal disc and described resin ring is made to peel off by external force.
Optionally, the technique heating retaining ring carries out in heat-treatment furnace.
Optionally, before heating described retaining ring, heat-treatment furnace is preheated, and to make the temperature in described heat-treatment furnace rise to be 100 DEG C～300 DEG C.
Optionally, the time heating described retaining ring is 5min to 60min.
Optionally, the material of described retaining ring is the one in PPS, PEEK, PET, PAI plastics.
Optionally, the flatness of described retaining ring is not more than 0.015mm.
Optionally, described retaining ring is not more than 0.015mm towards the surface depth of parallelism of basal disc side.
Optionally, the surface roughness of described resin ring is not more than 0.2 μm.
Optionally, the material of described basal disc is rustless steel.
Optionally, the flatness of described basal disc is not more than 0.015mm.
Optionally, described basal disc is not more than 0.015mm towards the surface depth of parallelism of retaining ring side.
Optionally, described solid is synthetic resin.
Compared with prior art, technical scheme has the advantage that
Retaining ring being heated, makes the solid between basal disc and resin ring soften so that both are peeling-off under the effect of slight external force, do not damage basal disc, thus being repeated basal disc utilizing, saving material.
Accompanying drawing explanation
Fig. 1 is the structural representation that in prior art, wafer is fixed on rotary head by retaining ring；
Fig. 2 is the perspective view of retaining ring in the embodiment of the present invention；
Fig. 3 is to maintain the part sectioned view of ring, illustrated therein is each surface of basal disc and resin ring；
Fig. 4 is the block diagram of stripping means in the embodiment of the present invention.
Detailed description of the invention
As described in the background section, prior art adopts the method adding a retaining ring outside wafer to prevent crystal round fringes overground.
With reference to shown in Fig. 1, corresponding to CMP technique CMP system generally comprise the rotary head 3 for fixing wafer, the carrying workbench of grinding pad and lapping liquid feeder (not shown), wafer is pressed on grinding pad with certain pressure by rotary head 3.
Retaining ring 1 is around the periphery being fixed on wafer 2, for wafer 2 is fixed on rotary head 3.Retaining ring 1 includes axially aligned basal disc 1a and resin ring 1b, is pasted fixing between basal disc 1a and resin ring 1b by solid.Wherein, the flush to be ground of the resin ring 1b surface towards grinding pad and wafer 2, so when wafer 2 is pressed on grinding pad, it is possible to ensures that each position of grinding pad top surface is at sustained height.
During grinding, lapping liquid flows between wafer 2 and grinding pad and wafer 2 surface produces chemical reaction and produces chemical reactant, chemical reactant is removed by the mechanism relatively rotating generation between wafer 2 and grinding pad, finally realizes the polishing of the dual function of mechanical grinding and chemical attack.
In grinding technics, it is necessary to ensure retaining ring 1 and grinding pad uniform contact, otherwise grinding pad is it would be possible to damaged, and then affects the Grinding Quality of wafer.
In order to ensure retaining ring 1 and grinding pad uniform contact, the parameters of retaining ring 1 all had very high requirement.Such as, if the self level of retaining ring 1 is bad, can cause that the partial points of retaining ring 1 cannot touch grinding pad；If the depth of parallelism of retaining ring 1 is bad, after the one side that it is axial is installed on board, the other end also will be unable to uniform contact grinding pad.Therefore grinding technics all compare high for retaining ring 1 with the flatness on surface of flush to be ground, the depth of parallelism and surface roughness requirements in wafer 2.And resin ring 1b can be worn in grinding technics, cause that it can not meet above-mentioned requirements, therefore in existing technique, for used retaining ring, usual directly scrap process, do not recycle.
But owing to there being the stop of resin ring 1b between basal disc 1a and grinding pad, after once grinding, resin ring 1b is worn already and cannot reuse, and basal disc 1a is likely to also stand intact, if it can be carried out proper process and recycle, then can the effectively save energy and cost.
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, specific embodiments of the invention are described in detail.
The embodiment of the present invention provides the stripping means of a kind of cmp retaining ring, as shown in Figure 2, retaining ring 10 includes the basal disc 11 of axially aligned annular and the resin ring 12 of annular, bonding by solid (not shown) between basal disc 11 and resin ring 12.
As it is shown on figure 3, resin ring 12 has top surface 12a and the basal surface 12b for contacting polishing pad during polishing.Basal disc 11 has the basal surface 11b being fixed to resin ring 12 top surface 12a and the top surface 11a against rotary head.Solid is laid between the top surface 12a of resin ring 12 and the basal surface 11b of basal disc 11 equably, and basal disc 11 and resin ring 12 is adhesively fixed.During grinding, wafer, around the outer peripheral face of wafer, is fixed by retaining ring 10.The basal surface 12b of resin ring 12 and the surface to be ground of wafer are substantially flush.
Wherein, the material of retaining ring 10 can be any one in PPS (polyphenylene sulfide), PEEK (polyether-ether-ketone), PET (polyethylene terephthalate is commonly called as polyester resin), PAI plastics (polyamide-imides).The material of basal disc 11 is rustless steel, and stainless fusing point is generally higher than 1500 DEG C.Solid generally selects synthetic resin material, and the fusing point of synthetic resin is typically in the scope of 100 DEG C～300 DEG C.
In order to ensure the grinding precision of wafer, during manufacture, the parameters of retaining ring 10 all there is strict requirement.As it has been described above, flatness and the depth of parallelism are to maintain ring 10 major parameter.
Flatness refers to the deviation of macroscopical height of concave convex relative ideal plane that a plane has, and the value of flatness is more low, then more little with the deviation of ideal plane.In the present embodiment, the flatness of the resin ring 12 in retaining ring 10 is not more than 0.015mm, and accordingly, the flatness of basal disc 11 is also not more than 0.015mm.It should be noted that the surface roughness of resin ring 12 is not more than 0.2 μm, otherwise can affect its flatness.
The depth of parallelism refers to degree parallel between two planes, refers to the error maximum permissible value that a plane is parallel relative to another plane, and same, the value of the depth of parallelism is more low, then the depth of parallelism is more good.In the present embodiment, resin ring 12 is not more than 0.015mm towards the surface depth of parallelism of basal disc 11 side.Basal disc 11 is also not more than 0.015mm towards the surface depth of parallelism of retaining ring side.
When above-mentioned parameter all meets, can ensure to realize uniform contact between retaining ring 10 and grinding pad.
For the effectively save energy and cost, the present invention provides the stripping means of a kind of retaining ring so that the basal disc after stripping is maintained to the higher depth of parallelism and flatness so that basal disc can reuse.As shown in Figure 4, the stripping means of the embodiment of the present invention comprises the following steps:
S1: retaining ring 10 is heated to solid softening；
S2: make basal disc 11 and resin ring 12 peel off by external force.
Wherein, step S1 carries out in heat-treatment furnace.Wherein, heat-treatment furnace can select the type of furnace of various heating furnace, for instance gas heating furnace or electric furnace.
Specifically, before heating retaining ring 10, first heat-treatment furnace is preheated, and make the temperature in heat-treatment furnace rise to 100 DEG C～300 DEG C.The target preheating temperature of heat-treatment furnace is simultaneously as the heating-up temperature (also referred to as sealing-off temperature) of retaining ring 10, therefore the target temperature preheated should be not less than or at least close to the fusing point of solid, ideally, heating-up temperature and fusing point adapt, such as, if solid is epoxy resin, then heat treated target preheating temperature can be 140 DEG C to 160 DEG C.The purpose of preheating is so that the solid in retaining ring 10 can soften in the short period of time, shortens heat time heating time (also referred to as the sealing-off time).
In other embodiments, it is also possible to do not preheat, and directly retaining ring 10 is put into heat-treatment furnace, starts to warm up heating from 0 DEG C, in this case it is necessary to suitably extend the sealing-off time.
In the present embodiment, the time of heating retaining ring 10 is 5min to 60min.For selecting the solid of different synthetic material, the sealing-off time may be different, it is possible to perusal, to be heated softens to solid.
In practical operation, adjust heating-up temperature and heat time heating time according to different solids, so that solid can be softened in the short period of time, improve separation efficiency.If heating-up temperature is too low or heat time heating time is too short, solid does not soften, then when basal disc 11 and resin ring 12 are peeled off under external force, it is possible to cause peeling off or to damage basal disc 11；Whereas if heating-up temperature is too high or heat time heating time is long, solid likely can soften and excessively even melt completely, then solid secondary will be made to adhere on basal disc 11 and resin ring 12, cause that solid cannot separate with basal disc 11.
When peeling off, owing to solid is softened, only need very little power just can be peeled from basal disc 11 by resin ring 12 during stripping, therefore typically directly peel off with hands, need not peel off by plant equipment, when therefore can avoid peeling off by plant equipment, basal disc 11 be caused damage.
Adopt the stripping means of the present embodiment, it is possible to the basal disc 11 of retaining ring 10 and resin ring 12 are separated relatively easily, and do not damage basal disc 11.After resin ring 12 is worn in chemical mechanical milling tech, it is possible to it is peeled off from basal disc 11, the basal disc 11 stripped down changes new resin ring so that the basal disc 11 of used retaining ring 10 can recycle.The basal disc 11 peeled off by this stripping means generally can be re-used 1 to 5 time.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (12)
1. a stripping means for cmp retaining ring, described retaining ring includes axially aligned basal disc and resin ring, bonding by solid between described basal disc and resin ring；
It is characterized in that, including:
By retaining ring heating to described solid softening；
Described basal disc and described resin ring is made to peel off by external force.
2. stripping means as claimed in claim 1, it is characterised in that the technique of heating retaining ring carries out in heat-treatment furnace.
3. stripping means as claimed in claim 2, it is characterised in that before heating described retaining ring, heat-treatment furnace is preheated, and to make the temperature in described heat-treatment furnace rise to be 100 DEG C～300 DEG C.
4. stripping means as claimed in claim 3, it is characterised in that the time heating described retaining ring is 5min to 60min.
5. stripping means as claimed in claim 1, it is characterised in that the material of described retaining ring is the one in PPS, PEEK, PET, PAI plastics.
6. stripping means as claimed in claim 1, it is characterised in that the flatness of described retaining ring is not more than 0.015mm.
7. stripping means as claimed in claim 1, it is characterised in that described retaining ring is not more than 0.015mm towards the surface depth of parallelism of basal disc side.
8. stripping means as claimed in claim 1, it is characterised in that the surface roughness of described resin ring is not more than 0.2 μm.
9. stripping means as claimed in claim 1, it is characterised in that the material of described basal disc is rustless steel.
10. stripping means as claimed in claim 1, it is characterised in that the flatness of described basal disc is not more than 0.015mm.
11. stripping means as claimed in claim 1, it is characterised in that described basal disc is not more than 0.015mm towards the surface depth of parallelism of retaining ring side.
12. stripping means as claimed in claim 1, it is characterised in that described solid is synthetic resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410764453.1A CN105729298A (en) | 2014-12-11 | 2014-12-11 | De-bonding method of retainer ring used for chemical mechanical polish |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410764453.1A CN105729298A (en) | 2014-12-11 | 2014-12-11 | De-bonding method of retainer ring used for chemical mechanical polish |
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| Publication Number | Publication Date |
|---|---|
| CN105729298A true CN105729298A (en) | 2016-07-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410764453.1A Pending CN105729298A (en) | 2014-12-11 | 2014-12-11 | De-bonding method of retainer ring used for chemical mechanical polish |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108857909A (en) * | 2018-07-20 | 2018-11-23 | 宁波江丰电子材料股份有限公司 | It is a kind of for the processing method of CMP retaining ring bonding plane and the preparation method of CMP retaining ring |
| CN110091249A (en) * | 2019-05-06 | 2019-08-06 | 西安奕斯伟硅片技术有限公司 | The method for dismounting and heating device of a kind of installation method of grinding pad, grinding pad |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1910012A (en) * | 2003-11-13 | 2007-02-07 | 应用材料公司 | Retaining ring with shaped surface |
| KR100884236B1 (en) * | 2008-05-27 | 2009-02-17 | (주)아이에스테크노 | Retainer Ring for Wafer Polishing |
| CN201824257U (en) * | 2010-06-03 | 2011-05-11 | 万关良 | Abrasive fiber polishing disc and polishing machine having same |
| CN103802271A (en) * | 2012-11-05 | 2014-05-21 | 韩相孝 | Method of manufacturing retainer ring for polishing wafer |
-
2014
- 2014-12-11 CN CN201410764453.1A patent/CN105729298A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1910012A (en) * | 2003-11-13 | 2007-02-07 | 应用材料公司 | Retaining ring with shaped surface |
| KR100884236B1 (en) * | 2008-05-27 | 2009-02-17 | (주)아이에스테크노 | Retainer Ring for Wafer Polishing |
| CN201824257U (en) * | 2010-06-03 | 2011-05-11 | 万关良 | Abrasive fiber polishing disc and polishing machine having same |
| CN103802271A (en) * | 2012-11-05 | 2014-05-21 | 韩相孝 | Method of manufacturing retainer ring for polishing wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108857909A (en) * | 2018-07-20 | 2018-11-23 | 宁波江丰电子材料股份有限公司 | It is a kind of for the processing method of CMP retaining ring bonding plane and the preparation method of CMP retaining ring |
| CN110091249A (en) * | 2019-05-06 | 2019-08-06 | 西安奕斯伟硅片技术有限公司 | The method for dismounting and heating device of a kind of installation method of grinding pad, grinding pad |
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Application publication date: 20160706 |