CN103035482B - The interim bonding method of silicon chip - Google Patents
The interim bonding method of silicon chip Download PDFInfo
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- CN103035482B CN103035482B CN201210290712.2A CN201210290712A CN103035482B CN 103035482 B CN103035482 B CN 103035482B CN 201210290712 A CN201210290712 A CN 201210290712A CN 103035482 B CN103035482 B CN 103035482B
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Abstract
The invention discloses a kind of interim bonding method of silicon chip, comprise step as follows: 1) on slide glass, make an annular slotted; 2) at the bonding face coating adhesive of silicon chip, and to its baking; 3) interim bonding is carried out by silicon chip with the slide glass of annular slotted; 4) silicon chip back side is ground thinning; 5) silicon chip back side technique is carried out; 6) silicon chip after thinning is dissociated from the slide glass with annular slotted.The present invention can prevent the side residual adhesive at slide edge, thus in the dissociation process of silicon chip and slide glass, can solve the silicon chip splintering problem caused because of this adhesive residue in traditional handicraft, improves rate of finished products.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacturing process, relate to a kind of process of thin silicon wafer, particularly relate to a kind of interim bonding method being applied to thin silicon wafer.
Background technology
Along with semiconductor chip is to various components and parts integrated level and the more and more higher requirement of function, traditional two-dimensional integrated circuit has been difficult to meet its demand, therefore a kind of new technology, three dimensional integrated circuits (3DIC) arises at the historic moment, and its cardinal principle is exactly by improving the integrated level of chip or various electronic devices and components by the mode of silicon chip and silicon chip (WafertoWafer) or chip and the upper and lower stacked in multi-layers of silicon chip (ChiptoWafer).In 3DIC technique, need to carry out thinning to silicon chip, one is to reduce package thickness, and two is by thinning through hole (Via) metal closures exposed for chaining down two silicon chips.
In addition, in recent years, igbt (IGBT) becomes the study hotspot of domestic semi-conductor discrete device gradually, the collector electrode of this transistorlike is formed at the back side of silicon chip, therefore in order to meet the requirement of IGBT product to junction depth, puncture voltage and heat radiation, also need to carry out thinning to silicon chip back side.
Different according to the requirement of 3DIC or IGBT product, thickness after required wafer thinning is different (10-200 micron) also, minimum even only have 10 microns, for silicon chip thin as a piece of paper like this, due to the reduction of its mechanical strength and the increase of angularity/flexibility, common semiconductor equipment has almost been difficult to support and transmission action, and fragment rate is very high.In order to solve support and the transmission problem of this thin silicon wafer, industry adopts the process of interim bonding/dissociate usually, its cardinal principle is exactly be combined in by silicon chip ephemeral key on the similar slide glass of a diameter (glass, sapphire or silicon materials), utilize this slide glass to realize the support to thin silicon wafer and transmission, thin silicon wafer can be prevented to be out of shape simultaneously, again slide glass is dissociated from thin silicon wafer after completing related process, its technological process as shown in Figure 1, comprise the steps: (1) bonding face coating adhesive at silicon chip, and it is toasted; (2) silicon chip and slide glass carry out interim bonding; (3) by thinning for described silicon chip back side grinding; (4) silicon chip back side technique is carried out; (5) the dissociating and cleaning of silicon chip and slide glass.The method of traditional interim bonding/dissociate has a shortcoming: as shown in Figure 2, in the bonding process of silicon chip 100 and slide glass 200, due to the relation of pressure and temperature, adhesive 300 easily " is squeezed " to the side at slide glass 200 edge, thus form adhesive residue (adhesive 302 of slide edge as shown in Figure 2) in side, slide glass 200 edge, like this in the dissociation process of silicon chip and slide glass, easily stick together and thin silicon wafer is broken.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of interim bonding method of silicon chip, the problem that the silicon chips periphery occurred during to solve dissociation process in traditional handicraft is broken.
For solving the problems of the technologies described above, the invention provides a kind of interim bonding method of silicon chip, comprising step as follows:
(1) on slide glass, an annular slotted is made;
(2) at the bonding face coating adhesive of silicon chip, and it is toasted;
(3) interim bonding is carried out by silicon chip with the slide glass of annular slotted;
(4) silicon chip back side is ground thinning;
(5) silicon chip back side technique is carried out;
(6) silicon chip after thinning is dissociated from the slide glass with annular slotted.
In step (1), described slide glass material is any one in glass, sapphire or silicon; Larger than silicon chip diameter 0 ~ 2 millimeter of described slide glass diameter, the thickness of described slide glass is 200-2000 micron.Preferably, described slide glass is diameter is 201 millimeters, and thickness is the glass wafer of 500 microns.
In step (1), described annular slotted, by machine cuts, or dry etching, or the method for wet etching is formed; The width of described annular slotted is 1-10 millimeter, and the degree of depth is 10-100 micron, and the outer rim of described annular slotted is 1-10 millimeter to the distance of slide edge.Preferably, described annular slotted is formed by the method for machine cuts, and the width of described annular slotted is 5 millimeters, and the degree of depth is 30 microns, and the outer rim of described annular slotted is 5 millimeters to the distance of slide edge.
In step (2), described adhesive refers to heat resolve type adhesive, or laser induced breakdown type adhesive, or dissolution with solvents type adhesive; The coating method of described coating adhesive adopts spin coating mode or spray mode; Described coating adhesive thickness is after baking 5-100 micron.Preferably, described adhesive is the heat decomposition type adhesive WaferBONDHT10.10 of BrewerScinece company; The coating method of described coating adhesive adopts spin coating mode; Described coating adhesive thickness is after baking 25 microns.
In step (3), described interim bonding process is complete in the airtight cavity of 0.001-0.1 milli handkerchief in a vacuum degree, and silicon chip and slide glass need be heated to 80-250 DEG C, and apply the pressure of 100-5000 newton in the side of silicon chip or slide glass, bonding time is 1-20 minute.Preferably, described vacuum degree is 0.01 milli handkerchief, and heating-up temperature is 160 DEG C, applies the pressure of 1000 newton in the side of slide glass, and bonding time is 5 minutes.After step (3) completes, the adhesive of silicon chip edge can be pressed against in the annular slotted of slide glass, thus prevents the side residual adhesive at slide edge.
In step (4), described silicon chip back side grinding thining method comprises following three steps: corase grind, fine grinding and polishing; Described corase grind and fine grinding adopt the diamond dust break bar of different meshes to be completed by mechanical lapping mode, and described polishing adopts chemical mechanical milling method, dry etching method or wet etching method; The thickness of the thinning rear silicon chip of described grinding is 10-400 micron.Preferably, described polishing adopts wet etching method; The thickness of the thinning rear silicon chip of described grinding is 80 microns.
In step (5), described silicon chip back side technique comprises etching, photoetching, ion implantation, removes photoresist or one or more techniques in cleaning.
In step (6), described dissociating refers to that chemical solvent dissociates method, or adds thermal dissociation method, or laser irradiates method of dissociating.Preferably, described employing of dissociating adds thermal dissociation method, be heated to 200-350 DEG C by the silicon chip after thinning after bonding and slide glass, there is thermal decomposition and lose viscosity in adhesive, thus is dissociated from slippage the slide glass of annular slotted the silicon chip after thinning at this temperature.
Compared to the prior art, the present invention has following beneficial effect: by making an annular slotted on slide glass, in bonding process, make adhesive " be squeezed " in this annular slotted, prevent the side residual adhesive at slide edge, thus the problem that the silicon chips periphery caused due to adhesive residue occurred when solving silicon chip and slide glass dissociation process in traditional handicraft is broken, to improve rate of finished products.
Accompanying drawing explanation
Fig. 1 is that traditional interim bonding/dissociate process chart;
Fig. 2 is slide edge side adhesive residue schematic diagram in traditional interim bonding/solution separating process;
Fig. 3 is that interim bonding of the present invention/dissociate process chart;
Fig. 4 (A) is the schematic top plan view after the step (1) of the inventive method completes;
Fig. 4 (B) is the generalized section of Fig. 4 (A) along X-X ' direction;
Fig. 4 (C) is the generalized section after the step (2) of the inventive method completes;
Fig. 4 (D) is the generalized section after the step (3) of the inventive method completes;
Fig. 4 (E) is the generalized section after the step (4) of the inventive method completes;
Fig. 4 (F) is the generalized section after the step (6) of the inventive method completes.
In figure, description of reference numerals is as follows:
100-silicon chip, the silicon chip after 100a-is thinning, 200-slide glass, 300-adhesive, the adhesive of 302-slide edge, the annular slotted on 400-slide glass, the width of a-annular slotted, the degree of depth of b-annular slotted, the outer rim of c-annular slotted is to the distance of slide edge.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further detailed explanation.
The interim bonding method of a kind of silicon chip of the present invention, its technological process as shown in Figure 3, it is characterized in that conciliating on separating process basis at traditional interim bonding, by making an annular slotted on slide glass, in bonding process, make adhesive " be squeezed " in this fluting, prevent the side residual adhesive at slide edge, thus the problem that the silicon chips periphery occurred when solving dissociation process in traditional handicraft is broken.
As shown in Fig. 3 and Fig. 4 (A)-Fig. 4 (F), the interim bonding method of a kind of silicon chip of the present invention, its detailed process step is as follows:
(1) as shown in Fig. 4 (A) and Fig. 4 (B), it is the vertical view having made the rear slide glass 200 of annular slotted 400 that slide glass 200 makes an annular slotted 400: Fig. 4 (A), Fig. 4 (B) is the generalized section of Fig. 4 (A) along X-X ' direction, described slide glass 200 is diameters than needing the large 0-2 millimeter of the silicon chip diameter of bonding, thickness is the disk of 100-2000 micron, and the material that slide glass 200 adopts is any one in glass, sapphire or silicon; Preferably, what the present embodiment was selected is diameter is 201 millimeters, and thickness is that the glass wafer of 500 microns is as slide glass.As shown in Fig. 4 (B), the width a of described annular slotted 400 is 1-10 millimeter, and degree of depth b is 10-100 micron, and the outer rim of described annular slotted 400 is 1-10 millimeter to the distance c at slide glass 200 edge; The manufacture method of annular slotted 400 can be machine cuts method, or dry etching method, or wet etching method; Preferably, the present embodiment uses machine cuts method, and namely using diamond dust break bar on above-mentioned slide glass 200, cut out a width is 5 millimeters, and the degree of depth is the annular slotted 400 of 30 microns, and the outer rim of this annular slotted 400 is 5 millimeters to the distance c at slide glass 200 edge.
(2) as shown in Fig. 4 (C), at the bonding face coating adhesive 300 of silicon chip 100, and it is toasted: described adhesive 300 refers to heat resolve type adhesive (WaferBONDHT10.10 as BrewerScinece company), or laser induced breakdown type adhesive (LC3200 and LTHC as 3M company), or dissolution with solvents type adhesive (A0006 and A4001 as TOK company), also namely these adhesive 300 materials are being heated to uniform temperature, or irradiate through the laser of certain power, or by after specific organic solvent dissolution, can reduce because there occurs chemical breakdown or lose its viscosity, the coating method of adhesive 300 has two kinds, and one is spin coating (SpinCoat) mode, and another kind is spray (Spray) mode, the thickness of described adhesive 300 after baking is 5-100 micron, to ensure after silicon chip 100 and slide glass 200 bonding (as Fig. 4 (D)), adhesive 300 fully can cover the shoulder height (Topography, not shown) of silicon chip 100 bonding face, preferably, adhesive 300 selected in the present embodiment is heat decomposition type adhesive WaferBONDHT10.10 of BrewerScinece company, adopts the mode of spin coating to be coated with at the bonding face of silicon chip 100, and to toast later thickness be 25 microns.
(3) as shown in Fig. 4 (D), interim bonded silica is carried out: this bonding process is complete in the airtight cavity of 0.001-0.1 milli handkerchief in a vacuum degree by silicon chip 100 with the slide glass 200 of annular slotted 400, and silicon chip 100 and slide glass 200 to 80-250 DEG C need be heated, and the pressure of 100-5000 newton is applied in the side of silicon chip 100 or slide glass 200, bonding time is 1-20 minute, preferably, the above-mentioned bonding conditions of the present embodiment is respectively: vacuum degree 0.01 milli handkerchief, heating-up temperature 160 DEG C, in slide glass 200 side, applied pressure is 1000 newton, bonding time is 5 minutes, as shown in Fig. 4 (D), after bonding, due to the relation of pressure and temperature, the adhesive 300 meeting " being squeezed " of silicon chip frontside edge in the annular slotted 400 of slide glass 200, thus prevents the side residual adhesive (adhesive 302 of the slide edge namely shown in Fig. 2) at slide glass 200 edge.
(4) as shown in Fig. 4 (E), grinding is carried out to silicon chip 100 thinning; The thinning another side being embodied in bonding face of described grinding, grinding thining method generally comprises three step corase grind, fine grinding and polishings, corase grind and fine grinding are generally completed by mechanical lapping mode with the diamond dust break bar of different meshes, and the methods such as polishing step then useful chemical mechanical lapping (CMP), dry etching or wet etching have been come.Preferably, the polishing after the present embodiment adopts the method for wet etching to grind.Silicon chip 100a thickness after thinning depends on product demand, is generally 10-400 micron, and the thickness of the silicon chip 100a after the present embodiment is preferably thinning is 80 microns.
(5) carry out silicon chip back side technique, described back process comprises etching, photoetching, ion implantation, removes photoresist or one or more industry conventional process in the technique such as cleaning.
(6), shown in Fig. 4 (F), the silicon chip 100a after thinning is dissociated from the slide glass 200 with annular slotted 400, described dissociating mainly contains chemical solvent and to dissociate method, add thermal dissociation method, laser irradiates method etc. of dissociating, preferably, the present embodiment adopts and adds thermal dissociation method, uniform temperature (as 200-350 DEG C) is heated to by the silicon chip 100a after thinning after bonding and slide glass 200, there is thermal decomposition at this temperature and lose viscosity in adhesive, thus the silicon chip 100a after thinning can be dissociated from slippage the slide glass 200 of annular slotted 400, from above-mentioned steps (3), in the side at slide glass 200 edge because there is no residual adhesive, so the problem that the silicon chips periphery occurred because edge adhesives remains when can solve dissociation process in traditional handicraft is broken.
Claims (14)
1. an interim bonding method for silicon chip, is characterized in that, comprise step as follows:
(1) on slide glass, an annular slotted is made;
(2) at the bonding face coating adhesive of silicon chip, and it is toasted;
(3) interim bonding is carried out by silicon chip with the slide glass of annular slotted; After step (3) completes, the adhesive of silicon chip edge can be pressed against in the annular slotted of slide glass, thus prevents the side residual adhesive at slide edge;
(4) silicon chip back side is ground thinning;
(5) silicon chip back side technique is carried out;
(6) silicon chip after thinning is dissociated from the slide glass with annular slotted.
2. method according to claim 1, is characterized in that, in step (1), described slide glass material is any one in glass, sapphire or silicon; Larger than silicon chip diameter 0 ~ 2 millimeter of described slide glass diameter, the thickness of described slide glass is 200-2000 micron.
3. method according to claim 2, is characterized in that, in step (1), described slide glass is diameter is 201 millimeters, and thickness is the glass wafer of 500 microns.
4. method according to claim 1, is characterized in that, in step (1), described annular slotted, is formed by the method for machine cuts or dry etching or wet etching; The width of described annular slotted is 1-10 millimeter, and the degree of depth is 10-100 micron, and the outer rim of described annular slotted is 1-10 millimeter to the distance of slide edge.
5. method according to claim 4, is characterized in that, in step (1), described annular slotted is formed by the method for machine cuts; The width of described annular slotted is 5 millimeters, and the degree of depth is 30 microns, and the outer rim of described annular slotted is 5 millimeters to the distance of slide edge.
6. method according to claim 1, is characterized in that, in step (2), described adhesive refers to heat resolve type adhesive or laser induced breakdown type adhesive or dissolution with solvents type adhesive; The coating method of described coating adhesive adopts spin coating mode or spray mode; Described coating adhesive thickness is after baking 5-100 micron.
7. method according to claim 6, is characterized in that, in step (2), described adhesive is the heat decomposition type adhesive WaferBONDHT10.10 of BrewerScinece company; The coating method of described coating adhesive adopts spin coating mode; Described coating adhesive thickness is after baking 25 microns.
8. method according to claim 1, it is characterized in that, in step (3), described interim bonding process is complete in the airtight cavity of 0.001-0.1 milli handkerchief in a vacuum degree, and silicon chip and slide glass need be heated to 80-250 DEG C, and the pressure of 100-5000 newton is applied in the side of silicon chip or slide glass, bonding time is 1-20 minute.
9. method according to claim 8, is characterized in that, in step (3), described vacuum degree is 0.01 milli handkerchief, and heating-up temperature is 160 DEG C, applies the pressure of 1000 newton in the side of slide glass, and bonding time is 5 minutes.
10. method according to claim 1, is characterized in that, in step (4), described silicon chip back side grinding thining method comprises following three steps: corase grind, fine grinding and polishing; Described corase grind and fine grinding adopt the diamond dust break bar of different meshes to be completed by mechanical lapping mode, and described polishing adopts chemical mechanical milling method, dry etching method or wet etching method; The thickness of the thinning rear silicon chip of described grinding is 10-400 micron.
11. methods according to claim 10, is characterized in that, in step (4), described polishing adopts wet etching method; The thickness of the thinning rear silicon chip of described grinding is 80 microns.
12. methods according to claim 1, is characterized in that, in step (5), described silicon chip back side technique comprises etching, photoetching, ion implantation, removes photoresist or one or more techniques in cleaning.
13. methods according to claim 1, is characterized in that, in step (6), described dissociating refers to that chemical solvent dissociates method or add thermal dissociation method or laser and irradiate method of dissociating.
14. methods according to claim 13, it is characterized in that, in step (6), described employing of dissociating adds thermal dissociation method, 200-350 DEG C is heated to by the silicon chip after thinning after bonding and slide glass, there is thermal decomposition and lose viscosity in adhesive, thus is dissociated from slippage the slide glass of annular slotted the silicon chip after thinning at this temperature.
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| CN104425249A (en) * | 2013-08-30 | 2015-03-18 | 无锡华润上华半导体有限公司 | Insulated gate bipolar transistor and manufacturing method thereof |
| CN104425257A (en) * | 2013-08-30 | 2015-03-18 | 无锡华润上华半导体有限公司 | Insulated gate bipolar transistor and manufacturing method thereof |
| CN104425254A (en) * | 2013-08-30 | 2015-03-18 | 无锡华润上华半导体有限公司 | Manufacturing method of IGBT (Insulated Gate Bipolar Translator) |
| CN103441074B (en) * | 2013-08-30 | 2016-08-31 | 吴宗宪 | A kind of manufacture is integrated with the method for the IGBT device of diode |
| CN103426808B (en) * | 2013-09-05 | 2016-04-13 | 华进半导体封装先导技术研发中心有限公司 | For interim bonding slide structure and bonding and tear bonding method open |
| CN103441093B (en) * | 2013-09-05 | 2016-02-03 | 华进半导体封装先导技术研发中心有限公司 | For the slide structure and preparation method thereof of interim bonding |
| CN103606517B (en) * | 2013-09-18 | 2016-06-01 | 中国东方电气集团有限公司 | A kind of silicon slice thinning method |
| CN104576533B (en) * | 2013-10-24 | 2018-10-12 | 无锡华润上华科技有限公司 | The preparation method of Trench IGBT with reverse-conducting structure |
| CN103730383B (en) * | 2014-01-02 | 2016-06-01 | 中国东方电气集团有限公司 | Novel sheet bonding method |
| CN105702563B (en) * | 2016-01-29 | 2019-01-18 | 天水华天科技股份有限公司 | A kind of novel wafer thining method |
| CN105742173A (en) * | 2016-03-02 | 2016-07-06 | 上海朕芯微电子科技有限公司 | Processing method for ultra-thin wafer |
| CN110189993A (en) * | 2018-02-23 | 2019-08-30 | 东莞新科技术研究开发有限公司 | The method of semiconductor surface elimination internal stress |
| CN115890021B (en) * | 2023-01-05 | 2023-05-16 | 成都功成半导体有限公司 | Wafer laser cutting method and wafer |
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