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CN105702858B - Phase-change memory and its manufacturing method - Google Patents

Phase-change memory and its manufacturing method Download PDF

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Publication number
CN105702858B
CN105702858B CN201610168967.XA CN201610168967A CN105702858B CN 105702858 B CN105702858 B CN 105702858B CN 201610168967 A CN201610168967 A CN 201610168967A CN 105702858 B CN105702858 B CN 105702858B
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layer
heating
patterning
layer structure
phase
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CN105702858A (en
Inventor
吴孝哲
王博文
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Beijing Times Full Core Storage Technology Co ltd
Being Advanced Memory Taiwan Ltd
Jiangsu Advanced Memory Semiconductor Co Ltd
Original Assignee
British Vigin Islands Manufacturer Epoch Quan Xin Science And Technology Ltd
Jiangsu Advanced Memory Technology Co Ltd
Jiangsu Advanced Memory Semiconductor Co Ltd
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Application filed by British Vigin Islands Manufacturer Epoch Quan Xin Science And Technology Ltd, Jiangsu Advanced Memory Technology Co Ltd, Jiangsu Advanced Memory Semiconductor Co Ltd filed Critical British Vigin Islands Manufacturer Epoch Quan Xin Science And Technology Ltd
Priority to CN201810068238.6A priority Critical patent/CN108110139B/en
Priority to CN201610168967.XA priority patent/CN105702858B/en
Publication of CN105702858A publication Critical patent/CN105702858A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

A kind of phase-change memory and its manufacturing method.The method for manufacturing phase-change memory includes following operation：(a) formed and stack layer structure on base material, stacking layer structure includes the first heating material layer, the second heating material layer and the first dielectric layer；(b) the first recess is formed through stacking layer structure；(c) the first conductive contact structure is formed in the first recess；(d) patterning stacks layer structure, and the remainder of stacking layer structure is made to form the first patterning heating material layer, the second patterning heating material layer and the first pattern dielectric layer；(e) the second recess is formed through the remainder for stacking layer structure, and the second recess disconnects the first patterning heating material layer and the second patterning heating material layer, and forms the first Multi-layer warming element and the second Multi-layer warming element；And (f) forms phase change element in the second recess.A kind of phase-change memory is also disclosed herein.The phase-change memory disclosed herein has higher write data speed and reliability.

Description

Phase-change memory and its manufacturing method
Technical field
The invention relates to a kind of phase-change memory and its manufacturing methods.
Background technology
Computer or other electronic devices are commonly configured with various types of memory bodys, such as random access memory (RAM), read-only memory (ROM), Dynamic Random Access Memory (DRAM), synchronous dynamic random-access memory body (SDRAM), Phase change random access memory (PCRAM) or fast flash memory bank.Phase-change memory is non-volatile memory body, can be passed through It measures the resistance value of memory cell and obtains and be stored in data therein.Add in general, phase-change memory unit includes Thermal element and phase change cell, phase change cell can be because be heated and undergoing phase transition.When being passed through electric current to heating element, Heating element converts electric energy into heat, and generated heat promotes phase change cell to occur the change of phase, such as from amorphous phase (amorphous) it is transformed into crystalline phase (crystalline).Phase change cell has different resistance values in different crystalline phases, Via the resistance value for detecting or reading phase change cell, just it is able to judge the data types of memory cell.Higher write is provided Enter speed and better reliability is always target that memory body manufacturer makes great efforts.
The content of the invention
Multiple embodiments according to the present invention, provide a kind of manufacturing method of phase-change memory, and the method can allow Crystalline phase variation occurs more quickly for phase change element, and can improve the reliability of phase-change memory.The method include with Under operation：(a) a pile laminated construction is formed on a base material, and stacking layer structure includes one first heating material layer, one second Heating material layer and one first dielectric layer are located between the first heating material layer and the second heating material layer；(b) one is formed First recess is through stacking layer structure；(c) one first conductive contact structure is formed in the first recess, makes the first conductive contact knot Structure contacts the first heating material layer and the second heating material layer；(d) patterning stacks layer structure, makes a residue of stacking layer structure Part forms one first patterning heating material layer, one second patterning heating material layer and one first pattern dielectric layer folder Arranged on first patterning heating material layer and second patterning heating material layer between, wherein first patterning heating material layer and Second patterning heating material layer contacts the first conductive contact structure；(e) one second recess is formed through the surplus of stacking layer structure Remaining part point, the second recess disconnects the first patterning heating material layer and the second patterning heating material layer, wherein the first pattern The residual fraction for changing heating material layer and the second patterning heating material layer is respectively formed in the both sides of the second recess more than one first Layer heating element and one second Multi-layer warming element, wherein the first Multi-layer warming element contacts the first conductive contact structure；With And (f) forms a phase change element in the second recess, and phase change element contact the first Multi-layer warming element and more than second Layer heating element.
In some embodiments, the above method can further following operation：One second dielectric layer covering first is formed to lead Electric contact structure and phase change element；One the 3rd recess is formed through the second dielectric layer and the second Multi-layer warming element；And One second conductive contact structure is formed in the 3rd recess, the second conductive contact structure is made to contact the second Multi-layer warming element.
In some embodiments, layer structure is stacked also comprising one the 3rd dielectric layer and one the 4th dielectric layer, the 3rd to be situated between Electric layer is folded between base material and the first dielectric layer, and the 4th dielectric layer is located on the second heating material layer.
In some embodiments, after the second recess is formed, also include：Etch the first dielectric layer in the second recess One side wall, the one side wall of the 3rd dielectric layer and the one side wall of the 4th dielectric layer, make an edge of the first Multi-layer warming element Protrude the side wall, the side wall of the 3rd dielectric layer and the side wall of the 4th dielectric layer of the first dielectric layer.
In some embodiments, in the operation for stacking layer structure in patterning, the first patterning heating material layer and the Two patterning heating material layers respectively contain one first wide portion, one second wide portion and a neck, each neck bridge and each correspond to The first wide portion and the second width portion, and a width of the width of each neck less than the corresponding first wide portion and the second width portion A width.
In some embodiments, the operation for forming the second recess includes the part for removing each neck, and disconnects first Pattern heating material layer and the second patterning heating material layer.
In some embodiments, the second recess is being formed in the operation of remainder for stacking layer structure, first One remainder of the remainder and the second patterning heating material layer that pattern heating material layer is respectively formed first One first heating layer structure of Multi-layer warming element and one second heating layer structure, and the first patterning heating material layer is another Another remainder of one remainder and the second patterning heating material layer is respectively formed the one of the second Multi-layer warming element 3rd heating layer structure and one the 4th heating layer structure.
Multiple embodiments according to the present invention, the method for providing another manufacture phase-change memory, the method include It operates below：(i) a patterning stacked structure is formed on a base material, is patterned wherein patterning stacked structure includes one first Heating material layer, one second patterning heating material layer and a patterned conductive layer be interposed in the first patterning heating material layer and Between second patterning heating material layer, wherein the first patterning heating material layer, the second patterning heating material layer and pattern Change conductive layer and respectively contain one first wide portion, one second wide portion and one first narrow portion, each first narrow portion bridge joint is corresponding First wide portion and the second width portion；(ii) the first narrow portion of patterned conductive layer is removed, and removes the first wide of patterned conductive layer Portion and the second respective part in width portion, to form one first conductive structure and one second conductive structure that are separated from each other, wherein First conductive structure is interposed in the first wide portion and the first of the second patterning heating material layer of the first patterning heating material layer Between wide portion, the second conductive structure is interposed in the second wide portion and the second patterning heating material of the first patterning heating material layer Between second width portion of layer；(iii) form the first patterning heating material layer of one first dielectric layer covering and the second patterning adds Hot material layer and the first conductive structure and the second conductive structure；(iv) the first patterning heating material layer and the second pattern are removed Change a part for each first narrow portion of heating material layer and remove a part for the first dielectric layer, and form that block each first narrow One first recess in portion；And (v) forms a phase change element in the first recess.
In some embodiments, above-mentioned method, also comprising following operation：Form one the 3rd dielectric layer covering phase change Element and the first dielectric layer；One second recess is formed in the 3rd dielectric layer and the first dielectric layer, the second recess exposes second Pattern the second width portion of heating material layer；And one second conductive contact structure is formed in the second recess, make the second conduction Second width portion of contact structures contact the second patterning heating material layer.
In some embodiments, in (iv) is operated, a remainder and for the first patterning heating material layer One remainder of two patterning heating material layers is respectively formed one first heating layer structure and one second heating layer structure, and Another remainder difference of another remainder of first patterning heating material layer and the second patterning heating material layer One the 3rd heating layer structure and one the 4th heating layer structure are formed, wherein the first heating layer structure and the second heating layer structure bit In the one side of the first recess, and the 3rd heating layer structure and the 4th heating layer structure are located at the opposite side of the first recess.
In some embodiments, in (iv) is operated, the first recess is further extended in the second dielectric layer.
In some embodiments, after (iv) is operated, also include：Etch one of the first dielectric layer in the first recess The one side wall of side wall and the second dielectric layer makes one side of at least one of the first heating layer structure and the second heating layer structure The side wall of edge point the second dielectric layer of protrusion and the side wall of the first dielectric layer.
In some embodiments, in (i) is operated, the first patterning heating material layer, the second patterning heating material Each also comprising one second narrow portion, each second narrow portion bridges corresponding first wide portion and second wide for layer and patterned conductive layer Portion, and wherein operate (iv) and also include the second of each first patterning heating material layer of removal and the second patterning heating material layer A part for narrow portion, and form the first recess.
Multiple embodiments according to the present invention, provide another phase-change memory.This phase-change memory includes one First conductive contact structure, a phase change element, one first Multi-layer warming element and one second conductive contact structure.Phase change Element has a first side wall one and a second sidewall.First Multi-layer warming element is electrically connected the first conductive contact knot Structure.The first Multi-layer warming element includes one first heating layer structure, one second heating layer structure and one first conductive structure, First conductive structure be interposed in this first heating layer structure and this second heating layer structure between, this first heating layer structure and The first side wall of the second heating layer form touch phase change element.Second conductive contact structure is configured at phase change member Above part.
In some embodiments, which contacts directly the phase change element.
In some embodiments, the phase-change memory is also comprising one second Multi-layer warming element, this more than second Layer heating element includes one the 3rd heating layer structure, one the 4th heating layer structure and one second conductive structure, second conduction Structure is interposed between the 3rd and the 4th heating layer structure, the 3rd heating layer structure and the 4th heating layer form touch The second sidewall of the phase change element, second conductive contact structure are electrically connected the second Multi-layer warming element.
In some embodiments, first conductive contact structure run through and contact this first heating layer structure and this second Layer structure is heated, which, which runs through and contact the 3rd, heats layer structure and the 4th heating layer structure.
In some embodiments, this first heating layer structure and this second heating layer structure respectively one first height and It is extended laterally in one second height, and the 3rd heating layer structure and the 4th heating layer structure in first height and are somebody's turn to do respectively It is extended laterally in second height.
In some embodiments, the first heating layer structure and the second heating layer structure respectively contain a wide portion, one First narrow portion, and respectively a width in the wide portion is more than a width of respectively first narrow portion, which is extended by the width portion And contact the first side wall of the phase change element.
In some embodiments, which contacts directly the phase change element.
In some embodiments, the phase-change memory is also comprising one second Multi-layer warming element, wherein this Two Multi-layer warming elements include one the 3rd heating layer structure, one the 4th heating layer structure and one second conductive structure, this second Conductive structure is interposed between the 3rd heating layer structure and the 4th heating layer structure, the 3rd heating layer structure and the 4th The second sidewall of the heating layer form touch phase change element, second conductive contact structure are electrically connected second multilayer and add Thermal element.
In some embodiments, first conductive contact structure run through and contact this first heating layer structure and this second Layer structure is heated, which, which runs through and contact the 3rd, heats layer structure and the 4th heating layer structure.
In some embodiments, this first heating layer structure and this second heating layer structure respectively one first height and It is extended laterally in one second height, and the 3rd heating layer structure and the 4th heating layer structure in first height and are somebody's turn to do respectively It is extended laterally in second height.
In some embodiments, the first heating layer structure and the second heating layer structure respectively contain a wide portion, one First narrow portion, and respectively a width in the wide portion is more than a width of respectively first narrow portion, which is extended by the width portion And contact the first side wall of the phase change element.
In some embodiments, the first heating layer structure and the second heating layer structure are each also narrow comprising one second Portion, second narrow portion are extended by the width portion and contact the first side wall of the phase change element.
In some embodiments, the first heating layer structure and the second heating layer structure at least one of which include phase The multiple sub-structures mutually stacked, and the material of the two adjacent sub-structures is different each other, and described two adjacent sons is allowed to tie There are a resistivity differences between the material of structure layer.
In some embodiments, one side of the first heating layer structure and the second heating layer structure at least one of which Edge is partially submerged into the first side wall of the phase change element.
Description of the drawings
Figure 1A illustrates the flow chart of the method for the manufacture phase-change memory of certain embodiments according to the present invention；
Figure 1B illustrates the flow chart of other operations of the method for the manufacture phase-change memory of certain embodiments of the present invention；
Fig. 2A-Figure 10 B figures illustrate each system of the method for the manufacture phase-change memory of certain embodiments of the present invention respectively The upper schematic diagram and diagrammatic cross-section in journey stage；
Figure 11 A- Figure 13 B figures illustrate the method for the manufacture phase-change memory of in addition certain embodiments of the invention respectively The upper schematic diagram and diagrammatic cross-section of different process stages；
Figure 14 illustrates the diagrammatic cross-section of the in addition phase-change memory of certain embodiments of the invention；
Figure 15 A illustrate the flow chart of the method for the manufacture phase-change memory of other certain embodiments according to the present invention；
Figure 15 B illustrate the stream of other operations of the method for the manufacture phase-change memory of in addition certain embodiments of the invention Cheng Tu；
Figure 16 A- Figure 24 C illustrate each processing procedure of the method for the manufacture phase-change memory of in addition certain embodiments of the invention The upper schematic diagram and diagrammatic cross-section in stage；
Figure 25-Figure 26 illustrates the diagrammatic cross-section of the in addition phase-change memory of certain embodiments of the invention；
Figure 27 A- Figure 27 B illustrate the upper schematic diagram and section of the in addition phase-change memory of certain embodiments of the invention Schematic diagram.
Specific embodiment
In order to make the description of the present invention more exhaustive and complete, below for embodiment aspect, the embodiment of the present invention Illustrative description is proposed with specific embodiment；But this not implements or the unique forms with the specific embodiment of the invention. Disclosed each embodiment below, beneficial in the case of can be mutually combined or substitute, can also add other in one embodiment Embodiment, and need not further record or explanation.
In the following description, many specific details be will be described in detail so that reader can fully understand following embodiment. However, the embodiment of the present invention can be put into practice in the case of without these specific details.In other cases, it is ripe to simplify attached drawing The structure known only symbolically is illustrated in figure with device.
Space relative terms used herein, for example, " lower section ", " under ", " top ", " on " etc., this is in order to just Relativeness between one element of narration or feature and another element or feature, as depicted in figure.These phases spatially Other orientation are included to the true meaning of term.For example, when diagram spins upside down 180 degree, an element and another element it Between relation, may from " lower section ", " under " become " top ", " on ".In addition, spatially opposite used herein Narration also should be explained similarly.
The various embodiment aspects or embodiment of the present invention are to provide a kind of method for manufacturing phase-change memory.Figure 1A is painted Show the flow chart of the method 1 of the manufacture phase-change memory of certain embodiments according to the present invention.Method 1 includes operation 10, behaviour Make 20, operation 30, operation 40, operation 50 and operation 60.
Although hereinafter illustrating the method disclosed herein using a series of operation or step, these operations or step Order shown in rapid is not necessarily to be construed as the limitation of the present invention.For example, it is some operation or step can by different order carry out and/ Or it is carried out at the same time with other steps.In addition, it is not necessary to perform all the step of illustrating could realize the present invention embodiment aspect, Embodiment or Real apply example.In addition, each operation described herein or step can include several sub-steps or action.
Embodiment aspect 1
In the operation 10 of Figure 1A, formed and stack layer structure on base material.Fig. 2A illustrates certain embodiments of the present invention The upper schematic diagram of operation 10 is performed, Fig. 2 B are illustrated in Fig. 2A along the diagrammatic cross-section of line segment B-B '.As shown in Figure 2 A and 2 B, It is formed on base material 101 and stacks layer structure 110, stacked layer structure 110 and include the first heating material layer 111, the second heating material 112 and first dielectric layer 113 of layer.First dielectric layer 113 is located in the first heating material layer 111 and the second heating material layer Between 112.In some embodiments, stack layer structure 110 and also include the 3rd dielectric layer 114 and the 4th dielectric layer 115, the Three dielectric layers 114 are folded between 101 and first heating material layer 111 of base material, and the 4th dielectric layer 115 is located at the second heating material On layer 112.In one embodiment, the 3rd dielectric layer 114 contact 101 and first heating material layer 111 of base material, the 4th dielectric layer 115 form the uppermost surface for stacking layer structure 110.
In some embodiments, base material 101 can include doped or undoped Silicon Wafer or semiconductor upper insulator (SOI) base material or similar semi-conducting material.
In some embodiments, blanket-deposited can be used in the first heating material layer 111 and the second heating material layer 112 Technology is formed, such as physical vapour deposition (PVD) processing procedure (PVD), chemical vapor deposition process (CVD), plasma enhanced chemical vapor (PECVD), atomic layer deposition processing procedure (ALD) and/or atomic layer chemical vapor deposition processing procedure (ALCVD) etc..In some embodiments In, the first heating material layer 111 and the second heating material layer 112 can include titanium nitride (TiN), tantalum nitride (TaN), titanium (Ti), The combination of iridium (Ir), β-tantalum (β-Ta), tungsten nitride (WN), tungsten (W), platinum (Pt) or similar material or above-mentioned material.Some In embodiment, the thickness of the first heating material layer 111 and the second heating material layer 112 can be about 2nm to about 40nm, preferably about 3nm to about 20nm, more preferably about 5nm are to about 10nm.If the thickness for patterning heating material layer 130 is too thick, may be unfavorable for final The performance of product, but the thickness for working as patterning heating material layer 130 is too thin, and the dose rate of follow-up process may be caused to decline, under Text will describe in more detail.
First dielectric layer 113, the 3rd dielectric layer 114 and the 4th dielectric layer 115 can be any suitable dielectric materials, example Such as silicon nitride, silica, the silica glass dielectric material of doping, the first dielectric layer 113, the 3rd dielectric layer 114 and the 4th dielectric Layer 115 can also be formed by the dielectric material of low-k, such as phosphosilicate glass (PSG), boron-phosphorosilicate glass (BPSG), fluorine silica glass (FSG), carbofrax material or combinations of the above or similar material.
In subsequent Fig. 3 A to Figure 13 B, the attached drawing of alphabetical " A ", such as Fig. 3 A, Fig. 4 A, Fig. 5 A are included in accompanying drawing number It is upper schematic diagram Deng figure；The attached drawing of primary and secondary " B ", such as the figures such as Fig. 3 B, Fig. 4 B, Fig. 5 B are included in accompanying drawing number, are along line segment The diagrammatic cross-section of B-B '.
In the operation 20 of Figure 1A, the first recess is formed through stacking layer structure.Refer to Fig. 3 A and Fig. 3 B, operation 20 to It is few to include the part, the part and the first dielectric layer of the second heating material layer 112 that remove the first heating material layer 111 113 part, and formed through the first recess 120 for stacking layer structure 110.In addition, form the operation bag of the first recess 120 Containing the side wall 111S for forming the first heating material layer 111 and side wall 112S of the second heating material layer 112, side wall 111S and side Wall 112S is exposed via the first recess 120.In some embodiments, the first recess 120 also exposes one of base material 101 Point.According to some embodiments of the present invention, in operation 20, patterning shade 121 is initially formed on the second dielectric layer 112, Patterning shade 121 has an opening.Then, processing procedure is etched, removes and is located in the opening range of patterning shade 121 Layer structure 110 is stacked, and forms the first recess 120.Afterwards, patterning shade 121 is removed.
In the operation 30 of Figure 1A, the first conductive contact structure is formed in the first recess 120.It refer to Fig. 4 A and figure 4B forms the first conductive contact structure 130 in the first recess 120, makes the first conductive contact structure 130 contact the first heating material The side wall 112S of the side wall 111S of the bed of material 111 and the second heating material layer 112.In some embodiments, first sink blanket-like Product layer of conductive material layer, this conductive material layer fill up the first recess 120, and are deposited on the top for stacking layer structure 110.So Afterwards, chemical mechanical grinding is carried out, removes the conductive material layer for stacking the top of layer structure 110, and the is formed in the first recess 120 One conductive contact structure 130.
In the operation 40 of Figure 1A, Fig. 5 A and Fig. 5 B are refer to, patterning process is carried out to stacking layer structure 110, allows heap The remainder 110R of laminated construction 110 forms the first patterning heating material layer 141, second and patterns heating material layer 142 And first pattern dielectric layer 143.First pattern dielectric layer 143 is folded in the first patterning heating material layer 141 and Between two patterning heating material layers 142.First and second patterning heating material layer 141,142 contacts the first conductive contact knot Structure 130.For example, in operation 40, it is initially formed patterning shade 122 and covers the first conductive contact structure 130 and stack layer Then a part for structure 110 is etched processing procedure, remove the portion for the stacking layer structure 110 for not being patterned the covering of shade 122 Point.Afterwards, patterning shade 122 is removed, obtains stacking the remainder 110R of layer structure 110.In some embodiments, heap The remainder 110R of laminated construction 110 also includes pattern dielectric layer 144 and pattern dielectric layer 145.In present embodiment In, the pattern for stacking the remainder 110R of layer structure 110 is rectangle.
Fig. 6 A and Fig. 6 B are refer to, after operation 40, can be selectively formed dielectric layer 146 in stacking layer structure 110 Remainder 110R around.In some embodiments, one layer of dielectric materials layer covering remainder 110R is first deposited, and Fill the space around remainder 110R；Then CMP step removal is carried out to be deposited on above remainder 110R Dielectric material, and form dielectric layer 146.
In the operation 50 of Figure 1A, Fig. 7 A and Fig. 7 B are refer to, form the second recess 150 through stacking layer structure 110 Remainder 110R, and form the first Multi-layer warming element 151 and the second Multi-layer warming element 154.Specifically, the is formed The operation of two recesses 150 includes first and second patterning heating material layer 141,142 for removing part, and the second recess 150 disconnect first and second patterning heating material layer 141,142.First and second patterns some residual of heating material layer Part 141a, 142a is stayed to form the first Multi-layer warming element 151 in the one side of the second recess 150, first and second patterning adds Other some residual fraction 141b, 142b of hot material layer 141,142 form the second multilayer in the opposite side of the second recess 150 and add Thermal element 154.First Multi-layer warming element 151 is spaced apart by the second recess 150 with the second Multi-layer warming element 154, more than first Layer 151 the first conductive contact structure of material contact 130 of heating element.
In some embodiments, the residual fraction 141a of the first patterning heating material layer 141 forms the first heating layer Structure 152, the residual fraction 142a of the second patterning heating material layer 142 form the second heating layer structure 153, and first and the Two heating layer structures 152,153 collectively form the first Multi-layer warming element 151.Similarly, the first patterning heating material layer 141 Another residual fraction 141b form the 3rd heating layer structure 155, second patterning heating material layer 142 another residual fraction 142b forms the 4th heating layer structure 156, and the 3rd and the 4th heating layer structure 155,156 collectively forms the second Multi-layer warming member Part 154.First heating layer structure 152 is between the first pattern dielectric layer 143 and pattern dielectric layer 144, the second heating Layer structure 153 is between the first pattern dielectric layer 143 and pattern dielectric layer 145.
According to some embodiments of the present invention, in operation 50, it is initially formed the knot that patterning shade 123 is illustrated in Fig. 6 B On structure, there is patterning shade 123 opening to correspond to first and second patterning heating material layer 141,142.Then, carry out Etch process removes the material part being located in the opening range of patterning shade 123, and forms the second recess 150.Second is recessed The depth of mouth 150 can at least reach the depth through the first patterning heating material layer 141, and the length L of the second recess 150 is at least It is enough to block first and second patterning heating material layer 141,142.Afterwards, patterning shade 123 is removed.
In the operation 60 of Figure 1A, Fig. 8 A and Fig. 8 B are refer to, form phase change element 160 in the second recess 150, and And phase change element 160 contacts the first Multi-layer warming element 151 and the second Multi-layer warming element 154.For example, can first sink One layer of phase-change material layer of product fills up the second recess 150 in pattern dielectric layer 145.Then, chemical machinery is carried out to grind Mill removes phase-change material layer and is located at the part of 145 top of pattern dielectric layer, and obtains being filled in the second recess 150 Phase change element 160.
In some embodiments, phase change element includes germanium-antimony-tellurium (GST) material, such as Ge2Sb2Te5、 Ge1Sb2Te4、Ge1Sb4Te7Or combinations of the above or similar material.Other phase-transition materials may be, for example, GeTe, Sb2Te3、 GaSb、InSb、Al-Te、Te-Sn-Se、Ge-Sb-Te、In-Sb-Te、Ge-Se-Ga、Bi-Se-Sb、Ga-Se-Te、Sn-Sb- Te、In-Sb-Ge、Te-Ge-Sb-S、Te-Ge-Sn-O、Sb-Te-Bi-Se、Te-Ge-Sn-Au、Pd-Te-Ge-Sn、In-Se- Ti-Co, Ge-Sb-Te-Pd, Ag-In-Sb-Te, Ge-Te-Sn-Pt, Ge-Te-Sn-Ni, Ge-Te-Sn-Pd and Ge-Sb-Se- Te。
Phase change element 160 can be because be heated and undergoing phase transition.In phase-change memory running, electric current is led from first Electric contact structure 130 heats layer structure 153 via the first heating layer structure 152 and second of the first Multi-layer warming element 151 and passes Phase change element 160 is led, a part of electric energy can be transformed into heat by first and second heating layer structure 152,153, produced Heat promote phase change element 160 that the change of phase occurs, such as be transformed into polycrystalline phase from amorphous phase (amorphous) (polycrystalline) or crystalline phase (crystalline) or from polycrystalline phase or crystal transition into amorphous phase.Phase change member Part 160 has different resistance values in different crystalline phases, via the resistance value for detecting or reading phase change element 160, is just able to Judge the data types of memory cell.
As it was noted above, some embodiments according to the present invention, the first heating material layer 111 and the second heating material layer 112 The thickness of (being indicated in Fig. 3 B and Fig. 4 B) can be about 2nm to about 40nm, the first heating material layer 111 and the second heating material layer 112 thickness substantially determine first, second, third and the 4th heating layer structure 152,153,155,156 thickness.If First heating material layer 111 and 112 respective thickness of the second heating material layer are too thick, are greater than about 40nm, then and first and Two heating layer structures 152,153 and the contact area of phase change element 160 become larger.When electric current passes through the first Multi-layer warming element When 151, the current density for causing first and second heating layer structure 152,153 is reduced, so as to reduce first and second heating The heating effect of 152,153 pairs of phase change elements 160 of layer structure, therefore it is unfavorable for the performance of final products.Anti-, if first Heating material layer 111 and second heating material layer, 112 respective thickness are too thin, for example, less than about 2nm, then and first, second, third And the 4th heating layer structure 152,153,155,156 and the contact area of phase change element 160 it is too small, contact interface may be caused Reliability it is bad.So some embodiments according to the present invention, first, second, third and the 4th heating layer structure 152,153, 155th, the thickness of 156 (or the first heating material layer 111 and second heating material layers 112) is about 2nm to about 40nm.
Fig. 8 C illustrate the partial enlarged view of the region C in Fig. 8 B, in some embodiments of present embodiment, form second The side wall and patterning of the first pattern dielectric layer 143 in the second recess 150 of etching can be further included after recess 150 The side wall of dielectric layer 144,145 so that the edge of the heating layer structures 153 of edge 152a and second of the first heating layer structure 152 153a protrudes the side wall of the second recess 150.Thus, after the formation phase change element described in operation 60 is performed, first The edge 153a for heating the heating layer structures 153 of edge 152a and second of layer structure 152 is just able to embedded phase change element 160 The first side wall 161.The length DL of the first heating layer structure 152 (or second heating layer structure 153) embedded phase change element 160 can For the thickness DT of the first heating layer structure 152 (or second heating layer structure 153) about 1/5 to about 1/20, for example, about 1/6, About 1/7, about 1/8, about 1/10, about 1/12, about 1/15 or about 1/18.The edge insertion phase of first and/or second heating layer structure When the side wall of variation element can improve phase-change memory running, phase change element 160 is made to generate deformation because of high temperature and is led The problem of loose contact of cause, further ensures that the reliability of phase change memory.
After operation 60, method 1 is selectively included other operations, such as operation 70, the operation 80 that Figure 1B is illustrated And operation 90.
In operation 70, as shown in Fig. 8 A and Fig. 8 B, form the second dielectric layer 171 and cover the first conductive contact structure 130 And phase change element 160.In some embodiments, be using code-pattern deposition technique whole face form the second dielectric layer 171.Second dielectric layer 171 can be any suitable dielectric material, such as silicon nitride, silica, Jie such as silica glass of doping Electric material, the second dielectric layer 171 can also be formed by the dielectric material of low-k, such as phosphosilicate glass (PSG), Boron-phosphorosilicate glass (BPSG), fluorine silica glass (FSG), carbofrax material or combinations of the above or similar material.
In operation 80, as shown in Fig. 9 A and Fig. 9 B, form the 3rd recess 180 and run through the second dielectric layer 171 and second Multi-layer warming element 154.For example, in operation 80, patterning shade 124 is initially formed on the second dielectric layer 171, pattern Changing shade 124 has an opening.Then, processing procedure is etched, removes the part being located in the opening range of patterning shade 124 Material, and form the 3rd recess 180.Afterwards, patterning shade 124 is removed.3rd recess 180 through the second dielectric layer 171 to All layers between 3rd heating layer structure 155 are other.In addition, the operation for forming the 3rd recess 180 also forms the 3rd heating layer knot The side wall 156a of the heating layer structures 156 of the side wall 155a of structure 155 and the 4th.Side wall 155a and side wall 156a are via the 3rd recess 180 expose.
In operation 90, as shown in Figure 10 A and Figure 10 B, the second conductive contact structure 190 is formed in the 3rd recess 180, The second conductive contact structure 190 is made to contact the second Multi-layer warming element 154.For the clear purpose of attached drawing, Figure 10 A do not illustrate Two conductive contact structures 190.In certain embodiments, the side of the 3rd heating layer structure 155 of the second conductive contact structure 190 contact The side wall 156a of the heating layer structures 156 of wall 155a and the 4th.In certain embodiments, the second conductive contact structure 190 can be such as For the metal material comprising tungsten (W) or other suitable metal materials.In certain embodiments, the second conductive contact structure 190 It fills up the 3rd recess 180 and covers at least part of second dielectric layer 171.
The content of the above-mentioned exposure of the present invention provides a kind of phase-change memory 100 simultaneously.Figure 10 A and Figure 10 B are refer to, Phase-change memory 100 includes the first conductive contact structure 130, the first Multi-layer warming element 151, the second Multi-layer warming element 154th, 160 and second conductive contact structure 190 of phase change element.First Multi-layer warming element 151 includes the first heating layer knot Structure 152 and second heats layer structure 153, first and second heating layer structure 152,153 is upper horizontal at various height respectively Extension, and contact the first side wall 161 of phase change element 160.First conductive contact structure 130 runs through and contacts first and second Heat layer structure 152,153.Second Multi-layer warming element 154 includes the 3rd heating layer structure 155 and the 4th and heats layer structure 156, the 3rd and the 4th heating layer structure 155,156 respectively at various height on extend laterally, and contact phase change element 160 Second sidewall 162.Second conductive contact structure 190 runs through and contacts the 3rd and the 4th heating layer structure 155,156.Some In embodiment, first and second heating layer structure 152,153 extends laterally on the first height L1 and the second height L2 respectively, And the 3rd and the 4th heating layer structure 155,156 extended laterally respectively on the first height L1 and the second height L2.In other words, 3rd heating layer structure 155 is extended laterally with the first heating layer structure 152 in substantially identical height, the 4th heating layer structure 156 extend laterally with the second heating layer structure 153 in substantially identical height.
Embodiment aspect 2
Embodiment aspect 2 includes the operation 10-60 described in embodiment aspect 1, and compared to embodiment aspect 1, embodiment aspect 2 is wherein One the difference is that, embodiment aspect 2 patterning stack layer structure 110 operation 40 formed in remainder 110R With different upper end out lines.Figure 11 A illustrate the top view that embodiment aspect 2 forms structure in operation 40, and Figure 11 B illustrate figure Along the diagrammatic cross-section of line segment BB ' in 11A.In Figure 11 A and Figure 11 B, the same or similar element in embodiment aspect 1 is with identical Component symbol represent.
In multiple embodiments of embodiment aspect 2, first and second patterning heating material layer 141,142 and first Pattern dielectric layer 143 has substantially the same upper end out line.Specifically, the first patterning heating material layer 141 includes First wide portion 141x, the second width portion 141y and neck 141z, neck 141z bridge joint the first wide portion 141x and the second width portion 141y, And the width W3 of width W2s and second width portion 141y of the width W1 of neck 141z less than the first wide portion 141x.Similarly, Two patterning heating material layers 142 include the first wide portion 142x, the second width portion 142y and neck 142z, neck 142z and bridge the One wide portion 142x and the second width portion 142y, and the width W1 of neck 142z is wide less than the width W2 and second of the first wide portion 142x The width W3 of portion 142y.Similarly, the first pattern dielectric layer 143 includes the first wide portion 143x, the second width portion 143y and neck Portion 143z, neck 143z bridge the first wide portion 143x and the second width portion 143y, and the width W1 of neck 143z is wide less than first The width W3 of the width W2 of portion 143x and the second width portion 143y.
Compared to embodiment aspect 1, embodiment aspect 2 another difference is that, the operation 50 of embodiment aspect 2, which includes, to be removed A part of each neck 141z, 142z, 143z, and first and second is patterned into heating material layer 141,142 and the first figure Case dielectric layer 143 disconnects.Figure 12 A illustrate this embodiment aspect 2 and are performing operation 50 (i.e.-the second recess 150 of formation) and operation Upper schematic diagram after 60 (i.e.-formation phase change elements 160), Figure 12 B are illustrated in Figure 12 A to be illustrated along the section of line segment BB ' Figure.
The second recess 150 that operation 50 is formed is Chong Die with a part of each neck 141z, 142z, 143z, therefore operates 50 include the part for removing each neck 141z, 142z, 143z.Second recess 150 is in the position of each neck 141z, 142z, 143z It puts and disconnects first and second patterning heating material layer 141,142, and form the first Multi-layer warming element more than 151 and second Layer heating element 154.First and second heating layer structure 152,153 of first Multi-layer warming element 151 respectively contains wide portion 152x, 153x and neck 152z, 153z.The width of wide portion 152x, 153x are more than the width of neck 152z, 153z, wherein neck Portion 152z, 153z extend to the first side wall 161 of phase change element 160 from corresponding wide portion 152x, 153x.
In other words, the pattern of first and second heating layer structure 152,153 of this embodiment aspect 2 is similar to " convex " Word shape, and the pattern of the the 2nd the 3rd and the 4th heating layer structure 155,156 is rectangle.Phase change element 160 is filled in In second recess 150.The other details of embodiment aspect 2 can be identical with embodiment aspect 1.After operation 60 is performed, embodiment aspect 2 It is selectively included operation 70, operation 80 and operation 90 that Figure 1B is illustrated.
Figure 13 A illustrate the upper schematic diagram of the phase-change memory 200 obtained by this embodiment aspect 2, and Figure 13 B illustrate figure The diagrammatic cross-section of 13A middle conductors B-B '.In Figure 13 A and Figure 13 B, the same or similar element in embodiment aspect 1 is with identical Component symbol represent.
Phase-change memory 200 includes the first conductive contact structure 130, the first Multi-layer warming element 151, the second multilayer and adds Thermal element 154,160 and second conductive contact structure 190 of phase change element.First Multi-layer warming element 151 includes first and adds Thermosphere structure 152 and second heats layer structure 153, and the first heating layer structure 152 and second heats layer structure 153 respectively not It is extended laterally in same height, and contacts the first side wall 161 of phase change element 160.First conductive contact structure 130 is through simultaneously Contact first and second heating layer structure 153.Second Multi-layer warming element 154 includes the 3rd heating layer structure 155 and the 4th Heat layer structure 156, the 3rd heating layer structure 155 and the 4th heat layer structure 156 respectively at various height on extend laterally, And contact the second sidewall 162 of phase change element 160.Second conductive contact structure 190 runs through and contacts the 3rd and the 4th heating Layer structure 156.First Multi-layer warming element 151 first and second heating layer structure 152,153 respectively contain wide portion 152x, 153x and neck 152z, 153z.The width of wide portion 152x, 153x are more than the width of neck 152z, 153z, wherein neck 152z, 153z extend to the first side wall 161 of phase change element 160 from corresponding wide portion 152x, 153x.
Because the width of neck 152z, 153z of first and second heating layer structure 152,153 are less than width portion 152x, 153x Width, when electric current is transferred to neck 152z, 153z by wide portion 152x, 153x, current density is improved, so neck The engagement edge of the first side wall 161 of 152z, 153z and phase change element 160 has very big current density, helps to allow phase Crystalline phase change rapidly occurs for variation element 160, so as to improve the speed and reliability of write-in data.
Embodiment aspect 3
Figure 14 illustrates 300 diagrammatic cross-section of phase-change memory of the embodiment aspect 3 of the present invention.Compared to embodiment aspect 1, Embodiment aspect 3 one of them except that formed stack layer structure 110 operation 10 in, the first heating material layer 111 And second heating material layer 112 (being indicated in Fig. 2 B, Fig. 3 B and Fig. 4 B) respectively contain the multiple sub-structures being stacked with, because This subsequent operation formed first, second, third and the 4th heating layer structure 152,153,155,156 respectively contain mutually The multiple sub-structures stacked.For example, the first heating layer structure 152 includes sub-structure 1521,1522,1523, and son knot The material of two adjacent sub-structures is different each other in structure layer 1521,1522,1523, makes have resistance between two adjacent sub-structures Rate difference.In various embodiments, this resistivity differences is has about 3 times of the material of minimum specific resistance in these sub-structures To about 80 times, for example, about 3 times to about 70 times, about 3 times to about 60 times, about 3 times to about 50 times, about 3 times to about 40 times, about 3 times To about 30 times, about 3 times to about 20 times or about 3 times to about 10 times.Resistivity differences between above-mentioned two adjacent sub-structure, allow Interface between two adjacent sub-structures forms higher resistivity.When electric current by conductive contact structure 130 flow through first with Second heating layer structure 152,153, when being transferred to phase change element 160, more electric current will be limited in low resistivity Sub-structure, therefore the sub-structure of low-resistivity has larger current density, also therefore in sub-structure and phase change element 160 interface generates higher temperature, and is conducive to promote phase change element 160 that crystalline phase change occurs.
Similarly, second heating layer structure 153 include sub-structure 1531,1532,1533, and sub-structure 1531, 1532nd, the material of at least two adjacent sub-structures is different each other in 1533, makes have a resistivity between two adjacent sub-structures Difference.This resistivity differences is has about the 3 of the material of minimum specific resistance again to about 80 times in these sub-structures, for example, about 3 times to about 70 times, about 3 times to about 60 times, about 3 times to about 50 times, about 3 times to about 40 times, about 3 times to about 30 times, about 3 times to about 20 times or about 3 times to about 10 times.
In multiple embodiments, the 3rd heating layer structure 155 includes sub-structure 1551,1552,1553, above-mentioned sub- knot The material for the sub-structure 1521,1522,1523 that the material of structure layer 1551,1552,1553 heats layer structure 152 with first respectively It is identical.In addition, the 4th heating layer structure 156 include sub-structure 1561,1562,1563, above-mentioned sub-structure 1561,1562, The material identical for the sub-structure 1531,1532,1533 that 1563 material heats layer structure 153 with second respectively.
In some embodiments of this embodiment aspect 3, above-mentioned sub-structure 1521,1522,1523,1531,1532, 1533rd, 1551,1552,1553,1561,1562,1563 material can include titanium nitride (TiN), tantalum nitride independently (TaN), the combination or similar of titanium (Ti), iridium (Ir), β-titanium (β-Ta), tungsten nitride (WN), tungsten (W), platinum (Pt) or above-mentioned material Material.For example, the material of sub-structure 1521/1522/1523 can be TaN/TiN/TaN, TiN/TaN/TiN, TiN/ Ir/TiN、Ir/TiN/Ir、β-Ta/TiN/β-Ta、TiN/β-Ta/TiN、WN/TiN/WN、TiN/WN/TiN、TiN/W/TiN、W/ TaN/W, Pt/Ir/Pt or Ir/Pt/Ir.
In some embodiments, first, second, third and the 4th heating layer structure 152,153,155,156 it is respective Thickness can be 2 to 40nm, preferable 3 to 20nm, more preferably 5 to 10nm.The thickness of sub-structure in each heating layer structure can be identical It is or different.Compared with embodiment aspect 1 or embodiment aspect 2, embodiment aspect 3 is with 1 or 2 same thickness of embodiment aspect First, under second, third and the 4th heating layer structure 152,153,155,156, phase change element 160 has the higher electric current close Degree is more conducive to promote phase change element 160 that crystalline phase change occurs.
The first, second, third of this embodiment aspect 3 and the 4th heating 152,153,155,156 pattern of layer structure can It is same or similar with embodiment aspect 1 or embodiment aspect 2.
Similar to the content described in previously for Fig. 8 B and Fig. 8 C, the first, second, third of this embodiment aspect 3 and the 4th The marginal portion of heating layer structure 152,153,155,156 can be embedded in the first side wall 161 and/or the of phase change element 160 One side wall 162.
Embodiment aspect 4
Figure 15 A illustrate the flow chart of the method 2 of the manufacture phase-change memory according to this embodiment aspect.Method 2 includes behaviour Make 12, operation 22, operation 32, operation 42 and operation 52.In subsequent drawings Figure 16 A to Figure 24 C, word is included in accompanying drawing number The attached drawing of female " A ", such as the figures such as Figure 16 A, Figure 17 A, Figure 18 A are upper schematic diagram；It is attached comprising primary and secondary " B " in accompanying drawing number Figure, such as the figures such as Figure 16 B, Figure 17 B, Figure 18 B are the diagrammatic cross-section along line segment B-B '；Comprising primary and secondary " C " in accompanying drawing number Attached drawing, such as the figures such as Figure 18 C, Figure 19 C, Figure 20 C are the diagrammatic cross-section along line segment C-C '.
In operation 12, patterning stacked structure is formed on base material, it is some that Figure 16 A to Figure 18 C illustrate this embodiment aspect The detailed step schematic diagram of the execution operation 12 of embodiment.First, as shown in Figure 16 A and Figure 16 B, provide or receive base material 210.Base material 210 includes the second dielectric layer 212, the first conductive contact structure 214 and substrate 216, the first conductive contact structure 214 and second dielectric layer 212 be formed on substrate 216, the first conductive contact structure 214 run through the second dielectric layer 212.Base material 210 can include doped or undoped Silicon Wafer or semiconductor upper insulator (SOI) base material or similar semi-conducting material.The One conductive contact structure 214 may be, for example, the metal material comprising tungsten (W) or other suitable metal materials, the second dielectric layer 212 can be any suitable dielectric material, such as silicon nitride, silica, the dielectric materials such as silica glass of doping, the second dielectric Layer 212 can also be formed by the dielectric material of low-k, such as phosphosilicate glass (PSG), boron-phosphorosilicate glass (BPSG), fluorine silica glass (FSG), carbofrax material or combinations of the above or similar material.
In Figure 17 A- Figure 17 B, the first heating material layer of deposited in sequential 217,218 and second heating material layer of conductive layer 219 on base material 210.Multiple embodiments according to the present invention, the material of conductive layer 218 are different from first and second heating material The material of the bed of material 217,219.The material of first heating material layer 217 may be, for example, titanium nitride (TiN), tantalum nitride (TaN), titanium (Ti), the combination of iridium (Ir), β-tantalum (β-Ta), tungsten nitride (WN), platinum (Pt) or similar material or above-mentioned material.Conductive layer 218 material may be, for example, the metal material comprising tungsten (W) or other suitable metal materials.In some embodiments, The material of two heating material layers 219 can be identical with the first heating material layer 217, but in other embodiments, the second heating material The material of the bed of material 219 can be different from the first heating material layer 217.First and second heating material layer 217,219 respective thickness Less than the thickness of conductive layer 218.In certain embodiments, first and second heating material layer 217,219 respective thickness are about 2nm to about 40nm, about preferably 3nm are to about 20nm, more preferably about 5nm to about 10nm.If first and second heating material after patterning The thickness of the bed of material 217,219 is too thick, may be unfavorable for the performance of final products, but first and second after patterning heats The thickness of material layer 217,219 is too thin, and the dose rate of follow-up process may be caused to decline.Such as physical vapour deposition (PVD) system can be used Journey (PVD), chemical vapor deposition process (CVD), plasma enhanced chemical vapor (PECVD), atomic layer deposition processing procedure (ALD) And/or the technologies such as atomic layer chemical vapor deposition processing procedure (ALCVD) form the first heating material layer 217, conductive layer 218 and the Two heating material layers 219.
In Figure 18 A- Figure 18 C, to the first heating material layer 217,218 and second heating material layer 219 of conductive layer into Row patterning process, and form patterning stacked structure 220.It patterns stacked structure 220 and includes the first patterning heating material Layer 230, second patterns heating material layer 240 and patterned conductive layer 250.Patterned conductive layer 250 is interposed in first and Between two patterning heating material layers 230,240.In multiple embodiments, the first patterning heating material layer 230, the second figure Case heating material layer 240 and patterned conductive layer 250 generally have identical upper end out line.For example, can be initially formed Shade 221 is patterned on the second heating material layer 219, the patterning definition of shade 221 patterns the top view of stacked structure 220 Then case is etched processing procedure, remove the material for not being patterned the covering of shade 221, and forms patterning stacked structure 220. Specifically, the first patterning heating material layer 230 includes the first wide portion 230x, the second wide portion 230y and the first narrow portion 230z.Similarly, the second patterning heating material layer 240 includes the first wide portion 240x, the second wide portion 240y and the first narrow portion 240z.Similarly, patterned conductive layer 250 includes the first wide portion 250x, the second wide portion 250y and the first narrow portion 250z.First Pattern the first narrow portion 230z bridge joints the first wide portion 230x and the second width portion 230y of heating material layer 230.Second patterning adds The first narrow portion 240z bridge joints the first wide portion 240x and the second width portion 240y of hot material layer 240.The first of patterned conductive layer 250 Narrow portion 250z bridges the first wide portion 250x and the second width portion 250y.In some embodiments, the first patterning heating material layer 230th, the second patterning heating material layer 240 and patterned conductive layer 250 are respectively also comprising the second narrow portion 230w, the second narrow portion 240w and the second narrow portion 250w.It is wide from the corresponding first wide portion of each second narrow portion 230w, 240w, 250w bridge joint and second Portion.In some embodiments, the first width portion 230x (and/or 240x, 250x) 1 and second width portion 230y of width D (and/or 240y, 250y) width D 2 be more than the first narrow portion 230z (and/or 240z, 250z) 3 and/or second narrow portion 230w of width D The width D 4 of (and/or 240w, 250w).In one embodiment, the pattern for patterning stacked structure 220 is with opening The rectangle of 220a.
In the operation 22 of Figure 15 A, referring to Figure 18 A- Figure 18 C and Figure 19 A- Figure 19 C, patterned conductive layer is removed 250 the first narrow portion 250z, and remove the first wide respective one of wide portion 250y of portion 250x and second of patterned conductive layer 250 Point, and form the first conductive structure 261 and the second conductive structure 265 (being shown in Figure 19 A and Figure 19 B) being separated from each other.More in detail Thin says, in some embodiments, using wet etch process, and selects have high selectivity to patterned conductive layer 250 Etchant, Figure 18 A- Figure 18 C structures illustrated are etched, part is removed from the sidewall direction of patterned conductive layer 250 Patterned conductive layer 250.Since the characteristic size of the first narrow portion 250z of patterned conductive layer 250 is smaller, so in wet type It can be completely removed in etch process.On the other hand, the first of patterned conductive layer 250 the wide portion 250x and the second width portion 250y Characteristic size it is larger, so will not all be removed, and the residual fraction of the first wide portion 250x and the second width portion 250y are distinguished Form the first conductive structure 261 and the second conductive structure 265.When patterned conductive layer 250 includes the second narrow portion 250w, second Narrow portion 250w can be also completely removed, therefore the first conductive structure 261 formed and the second conductive structure 265 are to be separated from each other , as shown in Figure 19 A and Figure 19 B.
First conductive structure 261 is interposed in the first wide portion 230x and the second pattern of the first patterning heating material layer 230 Between the first width portion 240x for changing heating material layer 240, the second conductive structure 265 is interposed in the first patterning heating material layer Between second width portion 240y of the patterning heating material layers 240 of 230 the second wide portion 230y and second.In addition, the first conductive knot The characteristic size D5 of structure 261 is less than the first patterning heating material layer 230 (and/or second patterning heating material layer 240) The characteristic size D6 of first width portion 230x (and/or 240x).Similarly, the characteristic size D7 of the second conductive structure 265 is less than first Pattern the second width portion 230y's (and/or 240y) of heating material layer 230 (and/or second patterning heating material layer 240) Characteristic size D8.It note that since the first narrow portion 250z and/or the second narrow portion 250w of patterned conductive layer 250 are all moved It removes, and the size reduction of the first wide portion 250x and the second width portion 250y, so in the position of C-C ' hatchings (as shown in fig. 19 c) It puts, the first patterning heating material layer 230 and second has no remaining patterned conductive layer between patterning heating material layer 240 250.After operation 22 is performed, removal that can be selective patterns shade 221.
In the operation 32 of Figure 15 A, Figure 20 A- Figure 20 C are refer to, the first dielectric layer 270 is formed and covers first and second figure Case heating material layer 230,240 and first and second conductive structure 261,265.First dielectric layer 270 can be any is suitble to Dielectric material, such as silicon nitride, silica, doping dielectric materials, first dielectric layer 270 such as silica glass can also be by low Jie The dielectric material of electrostrictive coefficient is formed, for example, phosphosilicate glass (PSG), boron-phosphorosilicate glass (BPSG), fluorine silica glass (FSG), Carbofrax material or combinations of the above or similar material.Physical vapour deposition (PVD) processing procedure (PVD), chemical vapor deposition can be used Processing procedure (CVD), plasma enhanced chemical vapor (PECVD), atomic layer deposition processing procedure (ALD) and/or atomic layer chemical vapor are sunk The technologies such as product processing procedure (ALCVD) form the first dielectric layer 270.
In the operation 42 of Figure 15 A, Figure 21 A- Figure 21 C are refer to, remove first and second patterning heating material layer 230th, a part for 240 respective first narrow portions 230z, 240z and the part of the first dielectric layer 270 is removed, and forms the One recess 274 blocks each first narrow portion 230z, 240z.When first and second patterning heating material layer 230,240 each also wraps During containing the second narrow portion 230w, 240w, operation 42 can also remove a part for the second narrow portion 230w, 240w, and the first recess 274 Also the second narrow portion 230w, 240w can be blocked.For example, patterning shade 222 can be initially formed on the first dielectric layer 270, schemed Case shade 222 has position of the opening corresponding to the first narrow portion 230z, 240z and/or the second narrow portion 230w, 240w, then Processing procedure is etched, removes the portion of material in the opening range of patterning shade 222, and forms the first recess 274.First is recessed The depth of mouth 274 is at least enough through the first patterning heating material layer 230, and the length E1 of the first recess 274 is at least enough to cut Disconnected first narrow portion 230z, 240z and/or the second narrow portion 230w, 240w.Afterwards, patterning shade 222 is removed.
In some embodiments, the patternings of remainder 230a and second of the first patterning heating material layer 230 The remainder 240a of heating material layer 240 respectively constitutes the first heating layer structure 231 and the second heating layer structure 242. In some embodiments, the first heating layer structure 231 is located on the first conductive contact structure 214.In addition, the first patterning heating material Another remainder 240b difference structures of the patterning heating material layers 240 of another remainder 230b of the bed of material 230 and second Layer structure 244 is heated into the 3rd heating layer structure 233 and the 4th.First and second heating layer structure 231,242 is located at first The one side of recess 274, the 3rd and the 4th heating layer structure 233,244 are located at the other side of the first recess 274.First heating layer Structure 231, second heats 242 and first conductive structure 261 of layer structure and collectively forms the first Multi-layer warming element 281.In addition, 3rd heating layer structure the 233, the 4th heats 244 and second conductive structure 265 of layer structure and collectively forms the second Multi-layer warming element 285.In one embodiment, the first recess 274 is further extended in the second dielectric layer 212.
In the operation 52 of Figure 15 A, Figure 22 A- Figure 22 C are refer to, form phase change element 290 in the first recess 274. For example, one layer of phase-change material layer can be first deposited on the first dielectric layer 270, and fills up the first recess 274.Then, Chemical mechanical grinding is carried out, phase-change material layer is removed and is deposited on the part of the top of the first dielectric layer 270, and obtains being filled in the Phase change element 290 in one recess 274.The contact of phase change element 290 first heating layer structure 231, second heats layer structure 242nd, the 3rd heating layer structure 233 and the 4th heats layer structure 244.The material of phase change element 290 can be with foregoing embodiment aspect It is identical.
In some embodiments of this embodiment aspect, perform operation 40 described in the first recess of formation 274 after, can more into One step includes the side wall of the first dielectric layer 270 and the side wall of the second dielectric layer 212 in the first recess 274 of etching, makes first And second heating layer structure 231, at least one of 242 a marginal portion protrude the second dielectric layer 212 (being indicated in Figure 21 C) Side wall and the first dielectric layer 270 side wall.Thus, after the formation phase change element described in operation 50 is performed, The edge of the first heating heating layer structure 242 of layer structure 231 and/or second is just able to the side wall of embedded phase change element 290, His details or feature, refer to previously for described in Fig. 8 C of embodiment aspect 1.
After operation 52, method 2 is selectively included other operations, such as operation 62, the operation 72 that Figure 15 B are illustrated And operation 82.
In operation 62, as shown in Figure 22 A- Figure 22 C, the 3rd dielectric layer 271 covering phase change element 290 and first is formed Dielectric layer 270.In some embodiments, be using code-pattern deposition technique whole face form the 3rd dielectric layer 271.The Three dielectric layers 271 can be any suitable dielectric material, such as silicon nitride, silica, the dielectric materials such as silica glass of doping, 3rd dielectric layer 271 can also be formed by the dielectric material of low-k, such as phosphosilicate glass (PSG), boron phosphorus silicon Glass (BPSG), fluorine silica glass (FSG), carbofrax material or combinations of the above or similar material.
In operation 72, as shown in Figure 23 A- Figure 23 C, second is formed in the 3rd dielectric layer 271 and the first dielectric layer 270 Recess 277, the second recess 277 expose the second width portion 240y of the second patterning heating material layer 240.For example, grasping In making 72, patterning shade 223 is initially formed on the 3rd dielectric layer 271, patterning shade 223 has an opening.Then, carry out Etch process removes the portion of material being located in the opening range of patterning shade 223, and forms the second recess 277 and expose Second width portion 240y of the second patterning heating material layer 240.
In operation 82, as shown in Figure 24 A- Figure 24 C, 294 structure of the second conductive contact is formed in the second recess 277, Make the second width portion 240y of 294 form touch second of the second conductive contact patterning heating material layer 240.In some embodiments In, the second conductive contact structure 294 may be, for example, the metal material comprising tungsten (W) or other suitable metal materials.Some In embodiment, the second conductive contact structure 294 fills up the second recess 277, and covers the 3rd dielectric layer 271 of a part.
The content of the above-mentioned exposure of the present invention provides a kind of phase-change memory 400 simultaneously.Figure 24 A- Figure 24 C are refer to, Phase-change memory 400 includes the first Multi-layer warming element 281, the second Multi-layer warming element 285 and phase change element 290. Phase change element 290 has the first side wall 291 and second sidewall 292.First Multi-layer warming element 281 includes the first heating layer Structure 231, second heats 242 and first conductive structure 261 of layer structure, and the first conductive structure 261 is interposed in the first heating layer Structure 231 and second is heated between layer structure 242.First heating layer structure 231 and second heats layer structure 242 respectively in difference Height on extend laterally.First heating layer structure 231 include wide portion 231x and the first narrow portion 231z, the first narrow portion 231z by Wide portion 231x extends and contacts the first side wall 291 of phase change element 290.Second Multi-layer warming element 285 includes the 3rd and adds Thermosphere structure the 233, the 4th heats 244 and second conductive structure 265 of layer structure.Second conductive structure 265 be interposed in the 3rd with Between 4th heating layer structure 233,244.3rd heating layer structure 233 and the 4th heats layer structure 244 respectively in different height It is extended laterally on degree, and contacts the second sidewall 292 of phase change element 290.In some embodiments, the first heating layer structure 231 also comprising the second narrow portion 231w, and the second narrow portion 231w is extended by wide portion 231x and contacts the first side of phase change element 290 Wall 291.In one embodiment, the width E2 of the second narrow portion 231w and the width E3 of the first narrow portion 231z are substantially the same.
Phase change element 290 can be because be heated and undergoing phase transition.In phase-change memory running, electric current is from more than first Layer heating element 281 first heating layer structure 231 and second heat layer structure 242 be transmitted to phase change element 290, first and A part of electric energy can be transformed into heat by the second heating layer structure 231,242, and generated heat promotes phase change element 290 to send out The change of raw phase, such as it is transformed into polycrystalline phase (polycrystalline) or crystalline phase from amorphous phase (amorphous) (crystalline) or from polycrystalline phase or crystal transition into amorphous phase.Phase change element 290 has not in different crystalline phases With resistance value, via the resistance value for detecting or reading phase change element 290, be just able to judge the data type of memory cell State.
Because the width E4 of the wide portion 231x of the first heating layer structure is narrow more than the width E3 and second of the first narrow portion 231z The summation of the wide E2 of portion 231w, when electric current is transferred to the first narrow portion 231z and the second narrow portion 231w by wide portion 231x, first is narrow The current density of portion 231z and the second narrow portion 231w are improved, so the first narrow portion 231z and the second narrow portion 231w and phase change The engagement edge of the first side wall 291 of element 290 has very big current density, helps to allow phase change element 290 rapidly Generation crystalline phase changes, so as to improve the speed and reliability of write-in data.
In other certain embodiments, the second heating layer structure 242 has substantial phase with the first heating layer structure 231 Same upper end out line, therefore the second heating layer structure 242 also includes wide portion 242x, the first narrow portion 242z and the second narrow portion 242w. The the first narrow portion 242z and the second narrow portion 242w of second heating layer structure 242 extend to phase change element 290 by wide portion 242x The first side wall 291.Therefore, in phase-change memory 400, the first narrow portion 231z and second of the first heating layer structure 231 is narrow The the first narrow portion 242z and the second narrow portion 242w of the heating layer structures 242 of portion 231w and second contact phase change element 290 The first side wall 291, so the first Multi-layer warming element 281 and 290 a total of 4 contact points of phase change element, when one of them Or during two or three contact point failures, phase-change memory 400 still can operate.
According to multiple embodiments of this embodiment aspect, the area of the first conductive structure 261 is less than the first heating layer structure The area of 231 areas and the second heating layer structure 242, so 261 phase change element not in direct contact of the first conductive structure 290。
In various embodiments, the first heating layer structure 231 and second Multi-layer warming member of the first Multi-layer warming element 281 The 3rd of part 285 heats to be extended laterally in the substantially identical height of layer structure 233, and the first Multi-layer warming element 281 The second heating layer structure 242 and the second Multi-layer warming element 285 the 4th heat substantially identical another of layer structure 244 It is extended laterally in height.
Embodiment aspect 5
Figure 25 and Figure 26 illustrates 500 diagrammatic cross-section of phase-change memory of the embodiment aspect 5 of the present invention, Figure 25 and Figure 26 Hatching may be, for example, along the line segment B-B ' and line segment C-C ' in Figure 24 C.Compared to embodiment aspect 4, this embodiment aspect its In one except that operation 12 it is described formed patterning stacked structures 220 in, first patterning heating material layer 230 And second patterning heating material layer 240 (being indicated in Figure 18 B and Figure 18 C) respectively contain the multiple minor structures being stacked with Layer, thus subsequent operation formed first, second, third and the 4th heating layer structure 231,242,233,244 each wrap Containing the multiple sub-structures being stacked with.For example, the first heating layer structure 231 includes sub-structure 2311,2312,2313, and And in sub-structure 2311,2312,2,313 two adjacent sub-structures material it is different each other, make to have between two adjacent sub-structures There are resistivity differences.In various embodiments, this resistivity differences is the material with minimum specific resistance in these sub-structures About 3 again to about 80 times, for example, about 3 times to about 70 times, about 3 times to about 60 times, about 3 times to about 50 times, about 3 times to about 40 Again, about 3 times to about 30 times, about 3 times to about 20 times or about 3 times to about 10 times.Resistivity between above-mentioned two adjacent sub-structure Difference, the interface allowed between two adjacent sub-structures form higher resistivity.
Similarly, second heating layer structure 242 include sub-structure 2421,2422,2423, and sub-structure 2421, 2422nd, the material of at least two adjacent sub-structures is different each other in 2423, makes have a resistivity between two adjacent sub-structures Difference.This resistivity differences is has about the 3 of the material of minimum specific resistance again to about 80 times in these sub-structures, for example, about 3 times to about 70 times, about 3 times to about 60 times, about 3 times to about 50 times, about 3 times to about 40 times, about 3 times to about 30 times, about 3 times to about 20 times or about 3 times to about 10 times.Layer structure 231,242 is heated when electric current flows through first and second by conductive contact structure 214, When being transferred to phase change element 290, more electric current will be limited in the sub-structure of low resistivity, therefore low-resistivity Sub-structure has larger current density, and higher temperature is also therefore generated in the interface of sub-structure and phase change element 290 Degree, and be conducive to promote phase change element 160 that crystalline phase change occurs.
In multiple embodiments, the 3rd heating layer structure 233 includes sub-structure 2331,2332,2333, above-mentioned sub- knot The material for the sub-structure 2311,2312,2313 that the material of structure layer 2331,2332,2333 heats layer structure 231 with first respectively It is identical.In addition, the 4th heating layer structure 244 include sub-structure 2441,2442,2443, above-mentioned sub-structure 2441,2442, The material identical for the sub-structure 2421,2422,2423 that 2443 material heats layer structure 242 with second respectively.
Above-mentioned sub-structure 2311 in this embodiment aspect 5,2312,2313,2421,2422,2423,2331,2332, 2333rd, 2441,2442,2443 material can be identical with described in previously for embodiment aspect 3.In some embodiments, First, second, third and the 4th heating layer structure 231,242,233,244 respective thickness can be 2 to 40nm, preferable 3 to 20nm, More preferably 5 to 10nm.The thickness of sub-structure in each heating layer structure may be the same or different.
Embodiment aspect 6
Figure 27 A illustrate the upper schematic diagram of the phase-change memory 600 of this embodiment aspect 6, and Figure 27 B illustrate edge in Figure 27 A The diagrammatic cross-section of C-C' line segments.In Figure 27 A and Figure 27 B, the same or similar element in embodiment aspect 4 or embodiment aspect 5 It is represented with identical component symbol.
Referring to Figure 27 A and Figure 27 B, phase-change memory 600 includes the first conductive contact structure 214, Multi-layer warming element 286th, 290 and second conductive contact structure 294 of phase change element.Multi-layer warming element 286 is electrically connected the first conductive contact Structure 214.Multi-layer warming element 286 includes the first heating layer structure 231, second and heats the conductive knot of layer structure 242 and first Structure 261.First conductive structure 261 is interposed between the first heating layer structure 231 and the second heating layer structure 242.First heating Layer structure 231 and second heat layer structure 242 respectively at various height on extend laterally.First heating layer structure 231 includes Wide portion 231x, the first narrow portion 231z and the second narrow portion 231w, the first narrow portion 231z and the second narrow portion 231w are prolonged by wide portion 231x It stretches out.Phase change element 290 has side wall 291, side wall 291 material contact the first narrow portion 231z and the second narrow portion 231w.Second Conductive contact structure 294 is configured at 290 top of phase change element.The top surface of phase change element 290 contacts directly the second conduction and connects Touch structure 294.
In some embodiments, the second heating layer structure 242 also includes wide portion 242x, one first narrow portion 242z and one Second narrow portion 242w, the first narrow portion 242z and the second narrow portion 242w is extended by wide portion 242x.In various embodiments, first adds Thermosphere structure 231 and second, which heats layer structure 242, has substantially the same upper end out line.
As it was noted above, the first heating layer structure 231 and/or second of this embodiment aspect 6 heats layer structure 242 and includes width Portion 231x, 242x, the first narrow portion 231z, 242z and the second narrow portion 231w, 242w, because the width E5 of width portion 231x, 242x are big In the summation of the width E7 of the width E6 and the second narrow portion 231w, 242w of the first narrow portion 231z, 242z, when electric current is by wide portion When 231x, 242x are transferred to the first narrow portion 231z, 242z and the second narrow portion 231w, 242w, the first narrow portion 231z, 242z and second The engagement edge of narrow portion 231w, 242w and phase change element is capable of providing the current density of bigger, helps to allow phase change element 290, which rapidly occur crystalline phase, changes, so as to improve the speed and reliability of write-in data.Further, since Multi-layer warming is first Tool is there are four contact point between part 286 and phase change element 290, thus when wherein one or two or three contact point contacts not When good, electric current still has other contact points to can be used as conductive path, makes phase-change memory that can maintain normally to operate.
Similar to embodiment aspect 5, in an embodiment of embodiment aspect 6, the first heating layer structure 231 includes mutual heap Folded multiple sub-structures 2311/2312/2313, the second heating layer structure 242 include the multiple sub-structures being stacked with 2421/2422/2423.Material, thickness and other feature or functions of above-mentioned each sub-structure can with previously for embodiment aspect 3 The content is identical.
Similar to the content described in previously for Fig. 8 C, in another embodiment of embodiment aspect 6, above-mentioned first and The first narrow portion 231z, 242z and the second narrow portion 231w, 242w of two heating layer structures 231,242 can be embedded in phase change element 160 side wall 160b, the length and others of the first narrow portion 231z, 242z and the second narrow portion 231w, 242w insertion side wall 291 are thin Section or feature, can be identical with previously for the 8C figures content.
Although the present invention is disclosed above with embodiment aspect, however, it is not to limit the invention, any to be familiar with this skill Person, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations, therefore protection scope of the present invention is worked as Subject to the scope of which is defined in the appended claims.

Claims (9)

  1. A kind of 1. method for manufacturing phase-change memory, which is characterized in that include following operation：
    (i) a patterning stacked structure is formed on a base material, and wherein the patterning stacked structure includes one first patterning and adds Hot material layer, one second patterning heating material layer and a patterned conductive layer be interposed in this first patterning heating material layer and This second patterning heating material layer between, wherein this first patterning heating material layer, this second patterning heating material layer And the patterned conductive layer respectively contains one first wide portion, one second wide portion and one first narrow portion, respectively first narrow portion bridges Corresponding first wide portion and the second width portion；
    (ii) remove first narrow portion of the patterned conductive layer, and remove the patterned conductive layer the first wide portion and this The two respective parts in width portion, to form one first conductive structure and one second conductive structure that are separated from each other, wherein this first Conductive structure is interposed in the first wide portion of the first patterning heating material layer and being somebody's turn to do for the second patterning heating material layer Between first width portion, which is interposed in the second wide portion and second figure of the first patterning heating material layer Between the second width portion of case heating material layer；
    (iii) formed one first dielectric layer cover this first patterning heating material layer and this second patterning heating material layer with And first conductive structure and second conductive structure；
    (iv) the one of the first patterning heating material layer and respectively first narrow portion of the second patterning heating material layer is removed Part and the part for removing first dielectric layer, and form one first recess for blocking respectively first narrow portion；And
    (v) phase change element is formed in first recess.
  2. 2. the method for manufacture phase-change memory as described in claim 1, which is characterized in that also comprising following operation：
    It forms one the 3rd dielectric layer and covers the phase change element and first dielectric layer；
    One second recess is formed in the 3rd dielectric layer and first dielectric layer, which exposes second patterning The second width portion of heating material layer；And
    One second conductive contact structure is formed in second recess, second conductive contact structure is made to contact second patterning The second width portion of heating material layer.
  3. 3. the method for manufacture phase-change memory as described in claim 1, which is characterized in that in (iv) is operated, this first One remainder of the remainder and the second patterning heating material layer that pattern heating material layer is respectively formed one First heating layer structure and one second heating layer structure, and this first patterning heating material layer another remainder and Another remainder of the second patterning heating material layer is respectively formed one the 3rd heating layer structure and one the 4th heating layer Structure, the wherein first heating layer structure and the second heating layer structure are located at the one side of first recess, and the 3rd heating Layer structure and the 4th heating layer structure are located at the opposite side of first recess.
  4. 4. the method for manufacture phase-change memory as claimed in claim 3, which is characterized in that wherein the base material includes one second Dielectric layer, which is located at second dielectric layer, and in (iv) is operated, which further prolongs It extends in second dielectric layer.
  5. 5. the method for manufacture phase-change memory as claimed in claim 4, which is characterized in that after (iv) is operated, also wrap Contain：Etch the one side wall of first dielectric layer in first recess and the one side wall of second dielectric layer, make this first plus Marginal portion for thermosphere structure and the second heating at least one of layer structure protrude the side wall of second dielectric layer with And side wall of first dielectric layer.
  6. 6. the method for manufacture phase-change memory as described in claim 1, which is characterized in that in (i) is operated, first figure Case heating material layer, the second patterning heating material layer and the patterned conductive layer each also include one second narrow portion, respectively Second narrow portion bridges the corresponding first wide portion and the second width portion, and wherein operate (iv) also comprising removal respectively this A part for second narrow portion of one patterning heating material layer and the second patterning heating material layer, and it is first recessed to form this Mouthful.
  7. 7. a kind of phase-change memory, which is characterized in that include：
    One first conductive contact structure；
    One phase change element has a first side wall one and a second sidewall；
    One first Multi-layer warming element is electrically connected first conductive contact structure, and wherein the first Multi-layer warming element includes One first heating layer structure, one second heating layer structure and one first conductive structure, first conductive structure be interposed in this Between one heating layer structure and the second heating layer structure, the first heating layer structure and the second heating layer form touch phase Change the first side wall of element；
    One second conductive contact structure is configured above the phase change element；
    And
    One second Multi-layer warming element, wherein the second Multi-layer warming element include one the 3rd heating layer structure, one the 4th heating Layer structure and one second conductive structure, second conductive structure are interposed in the 3rd heating layer structure and the 4th heating layer knot Between structure, the second sidewall of the 3rd heating layer structure and the 4th heating layer form touch phase change element, this second Conductive contact structure is electrically connected the second Multi-layer warming element；
    Wherein, which runs through and contacts the first heating layer structure and the second heating layer structure, this Two conductive contact structures, which run through and contact the 3rd, heats layer structure and the 4th heating layer structure；
    Wherein, the first heating layer structure and the second heating layer structure are horizontal in one first height and one second height respectively Extension, and the 3rd heating layer structure and the 4th heating layer structure laterally prolong in first height and second height respectively It stretches；
    Wherein, the first heating layer structure and the second heating layer structure respectively contain a wide portion, one first narrow portion and one second Narrow portion, and respectively a width in the wide portion is more than a width of respectively first narrow portion, which is extended and is connect by the width portion Touch the phase change element the first side wall, second narrow portion extended by the wide portion and contact the phase change element this first Side wall.
  8. 8. phase-change memory as claimed in claim 7, which is characterized in that the first heating layer structure and second heating layer Structure at least one of which includes multiple sub-structures for being stacked with, and the material of two adjacent sub-structures phase each other It is different, allow between the material of described two adjacent sub-structures there are a resistivity differences.
  9. 9. phase-change memory as claimed in claim 7, which is characterized in that the first heating layer structure and second heating layer One marginal portion of structure at least one of which is embedded in the first side wall of the phase change element.
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