CN105695818A - Preparation method of electronic aluminium alloy material - Google Patents
Preparation method of electronic aluminium alloy material Download PDFInfo
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- CN105695818A CN105695818A CN201610165721.7A CN201610165721A CN105695818A CN 105695818 A CN105695818 A CN 105695818A CN 201610165721 A CN201610165721 A CN 201610165721A CN 105695818 A CN105695818 A CN 105695818A
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- aluminium alloy
- manufacture method
- aluminum alloy
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- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 36
- 239000000956 alloy Substances 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title abstract 3
- 238000003756 stirring Methods 0.000 claims abstract description 17
- 238000005266 casting Methods 0.000 claims abstract description 12
- 238000005096 rolling process Methods 0.000 claims abstract description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 7
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000003723 Smelting Methods 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 239000011651 chromium Substances 0.000 claims abstract description 6
- 239000010949 copper Substances 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 238000010791 quenching Methods 0.000 claims abstract description 6
- 230000000171 quenching effect Effects 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011701 zinc Substances 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000006104 solid solution Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 238000013019 agitation Methods 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 239000011572 manganese Substances 0.000 claims description 5
- 238000003801 milling Methods 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 239000007787 solid Substances 0.000 abstract 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000001125 extrusion Methods 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- 238000010907 mechanical stirring Methods 0.000 abstract 1
- 239000012776 electronic material Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/026—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/002—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working by rapid cooling or quenching; cooling agents used therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
- C22F1/043—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys with silicon as the next major constituent
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Conductive Materials (AREA)
Abstract
The invention relates to a preparation method of an electronic aluminium alloy material. the electronic aluminium alloy material is prepared from the following components in parts by weight: 30-45 parts of silicon, 8-10 parts of iron, 3-6 parts of copper, 1-3 parts of magnesium, 2-5 parts of boron, 2-3.5 parts of chromium, 2.71-5.08 parts of zinc, 0.28-0.61 parts of titanium, 0.08-0.30 parts of vanadium, 1-3 parts of rare earth, and the balance of aluminium and unavoidable impurities. The preparation method of the electronic aluminium alloy material is characterized by comprising the following steps: 1. pretreating the materials and then putting the materials into a smelting furnace, and meanwhile carrying out mechanical stirring; 2. stirring for 5-10 minutes by keeping the temperature at 700-800 DEG C, and after stirring is completed, cooling to 580-650 DEG C, standing for 15-20 minutes and then carrying out rolling casting by using a rolling mill; 3. carrying out solid melting on the aluminium alloy after rolling casting at the temperature of 650 DEG C for 8 hours; and 4. carrying out extrusion forming on the aluminium alloy after solid melting, and finally carrying out quenching treatment with cold water.
Description
Technical field
The present invention relates to aluminium alloy production technical field and particularly relate to the manufacture method of a kind of electronics aluminum alloy materials。
Background technology
Miniaturization recently as electronic device, highly integrated fast development, phone housing, the electronic equipments such as notebook computer casing are also increasing to the application of aluminium alloy, and the tensile strength of the aluminum alloy materials now used, electric conductivity, hardness, the combination properties such as heat conductivity have certain defect can not well adapt to the demand in market, for electronic material, fundamental characteristics as goods, require that high intensity and high electric conductivity or heat conductivity have both except mechanical strength and excellent conductivity, also require good bending machining type, invention well solves existing exists technical problem。
Summary of the invention
The technical problem to be solved is to improve proportioning and the manufacture method of existing aluminium alloy, it is provided that the technical problem of the manufacture method of a kind of electronics aluminum alloy materials。
The present invention is achieved by the following technical solutions: the manufacture method of a kind of electronics aluminum alloy materials of the present invention, its feature is respectively as follows: silicon by following parts by weight composition: 30-45 part, ferrum: 8-10 part, copper: 3-6 part, manganese: 1-3 part, boron: 2-5 part, chromium: 2-3.5 part, zinc: 2.71-5.08 part, titanium: 0.28-0.61 part, vanadium 0.08-0.30 part, rare earth: 1-3 part, all the other are aluminum and inevitable impurity。
Further, it is also possible to add stannum: 0.6-1 part。
Further, it is also possible to add silicon dioxide: 0.6-1 part。
Further, it is also possible to add graphite: 2.6-3.5 part。
The manufacture method of a kind of electronics aluminum alloy materials of the present invention, its feature comprises the following steps: 1), be placed in smelting furnace by above-mentioned raw materials pretreatment, carries out mechanical agitation simultaneously；2) ensure during stirring that temperature is at 700-800 degree, stirs 5-10 minute, after stirring terminates, cool to after 580-650 degree stands 15-20 minute and carry out rolling casting with milling train；3) aluminium alloy solid solution 8 hours at temperature 650 DEG C after casting will be rolled；4), by the aluminium alloy extruded molding after solid solution, last cold water Quenching Treatment。?Detailed description of the invention
Describe the concrete technical scheme of the present invention by the following examples in detail it should be appreciated that below example is only capable of for explaining that the present invention is not to be construed as limitation of the present invention。
Embodiment 1:
A kind of manufacture method of the electronics aluminum alloy materials of the present invention, its feature is respectively as follows: silicon by following parts by weight composition: 30 parts, ferrum: 8 parts, copper: 3 parts, manganese: 1 part, boron: 2 parts, chromium: 2 parts, zinc: 2.71 parts, titanium: 0.28 part, vanadium 0.08 part, rare earth: 1 part, stannum: 0.6 part, silicon dioxide: 0.6 part, graphite: 2.6 parts, all the other are aluminum and inevitable impurity。
The manufacture method of a kind of electronics aluminum alloy materials of the present invention, its feature comprises the following steps: 1), be placed in smelting furnace by above-mentioned raw materials pretreatment, carries out mechanical agitation simultaneously；2) ensure during stirring that temperature is at 700-800 degree, stirs 5-10 minute, after stirring terminates, cool to after 580-650 degree stands 15-20 minute and carry out rolling casting with milling train；3) aluminium alloy solid solution 8 hours at temperature 650 DEG C after casting will be rolled；4), by the aluminium alloy extruded molding after solid solution, last cold water Quenching Treatment。
Embodiment 2:
A kind of manufacture method of the electronics aluminum alloy materials of the present invention, its feature is respectively as follows: silicon by following parts by weight composition: 38 parts, ferrum: 8.5 parts, copper: 3.8 parts, manganese: 1.25 parts, boron: 2.56 parts, chromium: 2.35 parts, zinc: 3.71 parts, titanium: 0.38 part, vanadium 0.12 part, rare earth: 1.9 parts, stannum: 0.75 part, silicon dioxide: 0.68 part, graphite: 2.9 parts, all the other are aluminum and inevitable impurity。
The manufacture method of a kind of electronics aluminum alloy materials of the present invention, its feature comprises the following steps: 1), be placed in smelting furnace by above-mentioned raw materials pretreatment, carries out mechanical agitation simultaneously；2) ensure during stirring that temperature is at 700-800 degree, stirs 5-10 minute, after stirring terminates, cool to after 580-650 degree stands 15-20 minute and carry out rolling casting with milling train；3) aluminium alloy solid solution 8 hours at temperature 650 DEG C after casting will be rolled；4), by the aluminium alloy extruded molding after solid solution, last cold water Quenching Treatment。
Embodiment 3:
A kind of manufacture method of the electronics aluminum alloy materials of the present invention, its feature is respectively as follows: silicon by following parts by weight composition: 42 parts, ferrum: 9.5 parts, copper: 5.8 parts, manganese: 2.25 parts, boron: 4.56 parts, chromium: 3.35 parts, zinc: 4.71 parts, titanium: 0.58 part, vanadium 0.27 part, rare earth: 2.9 parts, stannum: 0.88 part, silicon dioxide: 0.89 part, graphite: 3.25 parts, all the other are aluminum and inevitable impurity。
The manufacture method of a kind of electronics aluminum alloy materials of the present invention, its feature comprises the following steps: 1), be placed in smelting furnace by above-mentioned raw materials pretreatment, carries out mechanical agitation simultaneously；2) ensure during stirring that temperature is at 700-800 degree, stirs 5-10 minute, after stirring terminates, cool to after 580-650 degree stands 15-20 minute and carry out rolling casting with milling train；3) aluminium alloy solid solution 8 hours at temperature 650 DEG C after casting will be rolled；4), by the aluminium alloy extruded molding after solid solution, last cold water Quenching Treatment。
The invention has the beneficial effects as follows: the equilibrium of the intensity of the material that the present invention prepares, electric conductivity and bendability is greatly improved, and the rare earth in composition can improve the toughness of electronic material, wearability, corrosion resistance significantly, and Weldability and the cryogenic property of electronic material can also be improved。
The foregoing is only specific embodiments of the invention, but the architectural feature of the present invention is not limited thereto, any those skilled in the art is in the field of the invention, and change or the modification made all are encompassed among the scope of the claims of the present invention。
Claims (5)
1. the manufacture method of an electronics aluminum alloy materials, its feature is respectively as follows: silicon by following parts by weight composition: 30-45 part, ferrum: 8-10 part, copper: 3-6 part, manganese: 1-3 part, boron: 2-5 part, chromium: 2-3.5 part, zinc: 2.71-5.08 part, titanium: 0.28-0.61 part, vanadium 0.08-0.30 part, rare earth: 1-3 part, all the other are aluminum and inevitable impurity。
2. the manufacture method of an electronics aluminum alloy materials, it is characterised in that stannum can also be added: 0.6-1 part。
3. the manufacture method of an electronics aluminum alloy materials, it is characterised in that silicon dioxide can also be added: 0.6-1 part。
4. the manufacture method of an electronics aluminum alloy materials, it is characterised in that graphite can also be added: 2.6-3.5 part。
5. a manufacture method for electronics aluminum alloy materials, its feature comprises the following steps:
1), above-mentioned raw materials pretreatment is placed in smelting furnace, carries out mechanical agitation simultaneously；
2) ensure during stirring that temperature is at 700-800 degree, stirs 5-10 minute, after stirring terminates, cool to after 580-650 degree stands 15-20 minute and carry out rolling casting with milling train；
3) aluminium alloy solid solution 8 hours at temperature 650 DEG C after casting will be rolled；
4), by the aluminium alloy extruded molding after solid solution, last cold water Quenching Treatment。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610165721.7A CN105695818A (en) | 2016-03-22 | 2016-03-22 | Preparation method of electronic aluminium alloy material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610165721.7A CN105695818A (en) | 2016-03-22 | 2016-03-22 | Preparation method of electronic aluminium alloy material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105695818A true CN105695818A (en) | 2016-06-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610165721.7A Withdrawn CN105695818A (en) | 2016-03-22 | 2016-03-22 | Preparation method of electronic aluminium alloy material |
Country Status (1)
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| CN (1) | CN105695818A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020119501A1 (en) * | 2018-12-14 | 2020-06-18 | 珠海市润星泰电器有限公司 | High-conductivity aluminum alloy and preparation method therefor |
| CN116179903A (en) * | 2023-02-07 | 2023-05-30 | 帅翼驰新材料集团有限公司 | Low-carbon heat-free high-pressure cast aluminum alloy |
| CN116200635A (en) * | 2023-02-07 | 2023-06-02 | 帅翼驰新材料集团有限公司 | Manufacturing method of low-carbon heat-treatment-free high-pressure casting aluminum alloy |
-
2016
- 2016-03-22 CN CN201610165721.7A patent/CN105695818A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020119501A1 (en) * | 2018-12-14 | 2020-06-18 | 珠海市润星泰电器有限公司 | High-conductivity aluminum alloy and preparation method therefor |
| CN116179903A (en) * | 2023-02-07 | 2023-05-30 | 帅翼驰新材料集团有限公司 | Low-carbon heat-free high-pressure cast aluminum alloy |
| CN116200635A (en) * | 2023-02-07 | 2023-06-02 | 帅翼驰新材料集团有限公司 | Manufacturing method of low-carbon heat-treatment-free high-pressure casting aluminum alloy |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C04 | Withdrawal of patent application after publication (patent law 2001) | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20160622 |
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| DD01 | Delivery of document by public notice |
Addressee: Du Shenglong Document name: Notification of Approving Refund |