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CN105572980A - 液晶面板及其像素结构 - Google Patents

液晶面板及其像素结构 Download PDF

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CN105572980A
CN105572980A CN201510964545.9A CN201510964545A CN105572980A CN 105572980 A CN105572980 A CN 105572980A CN 201510964545 A CN201510964545 A CN 201510964545A CN 105572980 A CN105572980 A CN 105572980A
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common electrode
pixel electrode
liquid crystal
dot structure
protective seam
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李亚锋
彭香艺
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to CN201510964545.9A priority Critical patent/CN105572980A/zh
Priority to US14/907,865 priority patent/US10156756B2/en
Priority to PCT/CN2016/070627 priority patent/WO2017101185A1/zh
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Abstract

本发明公开一种液晶面板及其像素结构，其中所述像素结构包含一共通电极、一保护层、多个像素电极及多个第一通道。所述保护层位于所述共通电极上。所述多个多个像素电极位于所述保护层上。所述多个第一通道位于相邻的所述像素电极之间并贯穿所述保护层，其中所述多个第一通道裸露所述共通电极的一上表面。

Description

液晶面板及其像素结构
技术领域
本发明是有关于液晶显示技术领域，特别是有关于一种液晶面板及其像素结构。
背景技术
液晶穿透率是背光的光线能够穿透液晶层的能力，与液晶电场分布和电场密度有着重要联系。液晶电场分布和电场密度是由像素结构中的像素电极和外加电场决定的。因此，像素电极的设计具有非常重要的意义。
对于一个像素而言，像素电极会通过一个穿过保护层的通道来与源/漏极连接，故在制程工艺中需要制造此通道孔。传统的像素结构中，此通道孔只有一个，而共通电极是整面型的。电场是通过两层电极(共通电极与像素电极)产生，而像素电极要穿过保护层才能和共通电极形成电势差。当电场穿过保护层时，电场强度会衰减，因此势必导致形成电场线分布面小，且电场密度低。
故，有必要提供一种液晶面板及其像素结构，以解决现有技术所存在的问题。
发明内容
有鉴于此，本发明提供一种液晶面板及其像素结构，以解决现有技术所存在的电场线分布面小，且电场密度低问题。
为达成本发明的前述目的，本发明一实施例提供一种像素结构，其中所述像素结构包含︰一共通电极、一保护层、多个像素电极及多个第一通道。所述保护层位于所述共通电极上。所述多个多个像素电极位于所述保护层上。所述多个第一通道位于相邻的所述像素电极之间并贯穿所述保护层，其中所述多个第一通道裸露所述共通电极的一上表面。
在本发明的一实施例中，更包含多个第二通道，所述多个第二通道中的每一个分别对应形成于所述多个像素电极中的每一个的一端部，其中所述多个第二通道裸露所述共通电极的上表面。
在本发明的一实施例中，所述多个像素电极的每一个在一延伸方向上彼此平行的延伸形成于所述共通电极上。
在本发明的一实施例中，所述共通电极及所述多个像素电极的材料是氧化铟锡。
再者，本发明另一实施例提供一种液晶面板结构，其中所述液晶面板结构包含一像素结构，所述像素结构包含︰一共通电极、一保护层、多个像素电极及多个第一通道。所述保护层位于所述共通电极上。所述多个多个像素电极位于所述保护层上。所述多个第一通道位于相邻的所述像素电极之间并贯穿所述保护层，其中所述多个第一通道裸露所述共通电极的一上表面。
在本发明的一实施例中，还包含一阵列基板，其中所述阵列基板上具有所述像素结构。
在本发明的一实施例中，所述像素结构更包含多个第二通道，所述多个第二通道中的每一个分别对应形成于所述多个像素电极中的每一个的一端部，其中所述多个第二通道裸露所述共通电极的上表面。
在本发明的一实施例中，所述第二通道为一导通孔，用以电性连接所述多个像素电极的每一个与所述共通电极。
在本发明的一实施例中，所述多个像素电极的每一个在一延伸方向上彼此平行的延伸形成于所述共通电极上。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
附图说明
图1是本发明一实施例的液晶面板结构的像素结构的上视示意图。
图2A是沿着图1的A-A’线的剖面示意图。
图2B是沿着图1的B-B’线的剖面示意图。
具体实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图1至2B所示，图1是本发明一实施例的液晶面板结构26的像素结构10的上视示意图；图2A是沿着图1的A-A’线的剖面示意图；及图2B是沿着图1的B-B’线的剖面示意图。本发明一实施例的像素结构10主要包含一共通电极12、一保护层14、多个像素电极16及多个第一通道18。所述共通电极12的材料可以是氧化铟锡。所述保护层14位于所述共通电极12上。在一实施例中，所述保护层14是一钝化层，其材质例如选自氮化硅(SiNx)及氧化硅(SiOx)。所述保护层14用以保护并区隔所述共通电极12及所述多个像素电极16。所述多个像素电极16位于所述保护层14上，其中所述多个像素电极16的材料可以是氧化铟锡。在一实施例中，所述多个像素电极16的每一个在一延伸方向20上彼此平行的延伸形成于所述共通电极12上。例如，所述延伸方向20在图1中系指上下方向，而相邻的所述多个像素电极16之间形成狭缝(slit)，用以对液晶进行配向。所述多个第一通道18位于相邻的所述像素电极16之间并贯穿所述保护层14，其中所述多个第一通道16裸露所述共通电极的一上表面22。所述多个第一通道18主要是用来避免电场线分布面小且电场密度低的问题。在一实施例中，所述多个第一通道18可以沿着所述延伸方向20排列设置。详言之，所述共通电极12及所述多个像素电极16之间会产生电势差，而位在所述共通电极12及所述多个像素电极16之间的所述保护层14会降低所述电势差，因为所述保护层14的存在不可避免的会降低所述电势差。因此，所述多个第一通道18用来裸露所述共通电极12的上表面22，通过减少所述保护层14的比例来减少所述电势差的下降量，从而使电场线分布面大且电场密度高。
在一实施例中，本发明一实施例的像素结构10更包含多个第二通道24，所述多个第二通道24中的每一个分别对应形成于所述多个像素电极16中的每一个的一端部25，其中所述多个第二通道24裸露所述共通电极12的上表面22。所述第二通道24为一导通孔，用以电性连接所述多个像素电极16的每一个与所述共通电极12。
在本发明另一实施例之一液晶面板结构26中，还可包含所述像素结构10。所述液晶面板结构26可包含一阵列基板28，其中所述阵列基板28上具有所述像素结构10。在一实施例中，所述液晶面板结构26还可包含一遮光层29、一第一绝缘层30、一多晶层32、一第二绝缘层34、一第三绝缘层36及一平坦保护层38。例如，所述遮光层28可以是黑色矩阵；所述第一绝缘层30、所述第二绝缘层34及所述第三绝缘层36的材质包含氮化硅(SiNx)及氧化硅(SiOx)。所述像素结构10设于所述平坦保护层38上，其中所述共通电极12是整面的形成于所述平坦保护层38上。所述平坦保护层38的材质例如选自有机物。所述多个第一通道18主要是形成在所述保护层14之内，且所述多个第一通道18并不是位在所述多个像素电极16的位置，而是位在相邻的所述像素电极16之间。因此，所述多个第一通道18用来裸露所述共通电极12的上表面22，通过减少所述保护层14的比例来减少所述电势差的下降量，从而使电场线分布面大且电场密度高。
综上所述，本发明提供一种液晶面板及其像素结构，透过在像素结构的保护层中形成多个第一通道，以解决现有技术所存在的电场线分布面小，且电场密度低问题。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (10)

1.一种像素结构，其特征在于：所述像素结构包含：
一共通电极；
一保护层，位于所述共通电极上；
多个像素电极，位于所述保护层上；及
多个第一通道，位于相邻的所述像素电极之间并贯穿所述保护层，其中所述多个第一通道裸露所述共通电极的一上表面。
2.如权利要求1所述的像素结构，其特征在于：更包含多个第二通道，所述多个第二通道中的每一个分别对应形成于所述多个像素电极中的每一个的一端部，其中所述多个第二通道裸露所述共通电极的上表面。
3.如权利要求2所述的像素结构，其特征在于：所述第二通道为一导通孔，用以电性连接所述多个像素电极的每一个与所述共通电极。
4.如权利要求1所述的像素结构，其特征在于：所述多个像素电极的每一个在一延伸方向上彼此平行的延伸形成于所述共通电极上。
5.如权利要求1所述的像素结构，其特征在于：所述共通电极及所述多个像素电极的材料是氧化铟锡。
6.一种液晶面板结构，其特征在于：所述液晶面板结构包含一像素结构，所述像素结构包含：
一共通电极；
一保护层，位于所述共通电极上；
多个像素电极，位于所述保护层上；及
多个第一通道，位于相邻的所述像素电极之间并贯穿所述保护层，其中所述多个第一通道裸露所述共通电极的一上表面。
7.如权利要求6所述的液晶面板结构，其特征在于：还包含一阵列基板，其中所述阵列基板上具有所述像素结构。
8.如权利要求6所述的液晶面板结构，其特征在于：所述像素结构更包含多个第二通道，所述多个第二通道中的每一个分别对应形成于所述多个像素电极中的每一个的一端部，其中所述多个第二通道裸露所述共通电极的上表面。
9.如权利要求8所述的液晶面板结构，其特征在于：所述第二通道为一导通孔，用以电性连接所述多个像素电极的每一个与所述共通电极。
10.如权利要求6所述的液晶面板结构，其特征在于：所述多个像素电极的每一个在一延伸方向上彼此平行的延伸形成于所述共通电极上。
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