CN105514274B - It is a kind of based on lithium fluoride/polyvinyl alcohol alternate thin films organic semiconductor device thin film encapsulation technology - Google Patents
It is a kind of based on lithium fluoride/polyvinyl alcohol alternate thin films organic semiconductor device thin film encapsulation technology Download PDFInfo
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- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 title claims abstract description 114
- 238000005538 encapsulation Methods 0.000 title claims abstract description 52
- 239000004372 Polyvinyl alcohol Substances 0.000 title claims abstract description 46
- 229920002451 polyvinyl alcohol Polymers 0.000 title claims abstract description 46
- 239000010409 thin film Substances 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000005516 engineering process Methods 0.000 title abstract description 7
- 239000010408 film Substances 0.000 claims abstract description 20
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 12
- 238000004528 spin coating Methods 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052731 fluorine Inorganic materials 0.000 claims abstract 2
- 239000011737 fluorine Substances 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 4
- 230000005693 optoelectronics Effects 0.000 claims 1
- 238000012536 packaging technology Methods 0.000 abstract description 6
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 abstract 2
- 229910001947 lithium oxide Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 39
- 238000004806 packaging method and process Methods 0.000 description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002641 lithium Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本发明公开了一种基于氟化锂/聚乙烯醇交替薄膜的有机半导体器件薄膜封装技术,其特征在于,首先制备氟化锂缓冲层(6),然后依次制备聚乙烯醇(701)/氟化锂(702)交替封装薄膜。本专利薄膜封装技术通过如下的步骤实现:①在有机半导体器件(5)之上采用真空热蒸发的方式沉积氟化锂缓冲层,其尺度适当,以使待封装有机半导体器件的电极(2和4)露在外面,而其有机半导体活性层(3)被完全封装在里面;②在氟化锂缓冲层上用旋涂法制备聚乙烯醇封装层;③进行干燥处理;④在聚乙烯醇封装层上采用真空热蒸发的方式沉积氟化锂封装层;⑤重复上述步骤②‑④,直至在氟化锂封装层上再制备第(N‑1)层的聚乙烯醇/氟化锂交替薄膜(NO);⑥在200℃温度下对封装器件加热2小时,对聚乙烯醇进行交联。
The invention discloses a thin film encapsulation technology for organic semiconductor devices based on lithium fluoride/polyvinyl alcohol alternating thin films, which is characterized in that a lithium fluoride buffer layer (6) is prepared first, and then polyvinyl alcohol (701)/fluorine Lithium oxide (702) alternately encapsulates the film. The patented thin-film packaging technology is realized through the following steps: ① Deposit a lithium fluoride buffer layer on the organic semiconductor device (5) by vacuum thermal evaporation, and its scale is appropriate so that the electrodes (2 and 2) of the organic semiconductor device to be packaged 4) exposed outside, and its organic semiconductor active layer (3) is completely encapsulated inside; ② prepare polyvinyl alcohol encapsulation layer on the lithium fluoride buffer layer by spin coating; ③ carry out drying treatment; ④ in polyvinyl alcohol The lithium fluoride encapsulation layer is deposited on the encapsulation layer by vacuum thermal evaporation; ⑤Repeat the above steps ②-④, until the (N-1)th layer of polyvinyl alcohol/lithium fluoride alternately is prepared on the lithium fluoride encapsulation layer Thin film (NO); ⑥Heat the packaged device at 200°C for 2 hours to cross-link the polyvinyl alcohol.
Description
【技术领域】【Technical field】
本发明属于有机半导体器件封装领域,特别涉及一种基于氟化锂/聚乙烯醇交替薄膜的有机半导体器件薄膜封装技术。The invention belongs to the field of packaging of organic semiconductor devices, in particular to a film packaging technology of organic semiconductor devices based on lithium fluoride/polyvinyl alcohol alternating thin films.
【背景技术】【Background technique】
有机半导体器件除了具备无机器件的基本特性以外,还秉承了有机半导体材料质轻、成本低、制备工艺简单、柔韧性好、易于大面积化和小型化等优点,具有广阔的应用前景。自上世纪80年代以来,包括IBM、索尼、三星、普林斯顿大学和剑桥大学等众多知名公司、大学研究机构均在有机半导体器件领域进行了大量的研究。目前,有机半导体器件主要包括有机场效应晶体管(OFET)、有机发光二极管(OLED)和有机光伏电池(OPC)等。In addition to the basic characteristics of inorganic devices, organic semiconductor devices also inherit the advantages of light weight, low cost, simple preparation process, good flexibility, easy large-scale and miniaturization of organic semiconductor materials, and have broad application prospects. Since the 1980s, many well-known companies and university research institutions, including IBM, Sony, Samsung, Princeton University and Cambridge University, have conducted a lot of research in the field of organic semiconductor devices. Currently, organic semiconductor devices mainly include organic field-effect transistors (OFETs), organic light-emitting diodes (OLEDs), and organic photovoltaic cells (OPCs).
有机半导体器件更新的速度约来越快,其产品也向着重量更轻,体积更小,厚度更薄,性能更优的趋势发展。但相比于无机器件,有机半导体器件在稳定性方面则显示出很大的不足。科学家们通过在不同湿度、不同温度的的测试环境中对有机半导体器件进行测量时发现:影响有机电子器件寿命的主要因素是空气中的水、氧。它们会从器件的表面向内渗透,对有机半导体器件造成很大的损伤,严重影响有机半导体材料以及电极材料的性能,从而使得器件性能严重下降。因此,有机半导体器件的封装就显得十分重要。The update speed of organic semiconductor devices is getting faster and faster, and its products are also developing towards the trend of lighter weight, smaller volume, thinner thickness and better performance. However, compared with inorganic devices, organic semiconductor devices show great shortcomings in terms of stability. Scientists found that the main factors affecting the life of organic electronic devices are water and oxygen in the air when they measured organic semiconductor devices in different humidity and different temperature test environments. They will infiltrate from the surface of the device, causing great damage to the organic semiconductor device, seriously affecting the performance of the organic semiconductor material and the electrode material, thereby seriously degrading the performance of the device. Therefore, the packaging of organic semiconductor devices is very important.
传统的玻璃/金属后盖封装方法在很多时候,都能够基本达到器件对封装的要求,但随着半导体制造技术的不断发展以及对芯片封装的技术要求的不断提高,传统的封装方法已经无法满足器件对于封装更轻、更薄发展的要求,而且这种封装方式的成本相对较高。取代这种传统封装方式的新型封装办法就是采用薄膜封装,目前最常用的薄膜封装方式有有机薄膜封装、无机薄膜封装、有机/无机混合薄膜封装、无机/无机薄膜混合封装等。The traditional glass/metal back cover packaging method can basically meet the packaging requirements of the device in many cases, but with the continuous development of semiconductor manufacturing technology and the continuous improvement of technical requirements for chip packaging, the traditional packaging method has been unable to meet Devices require lighter and thinner packaging, and the cost of this packaging method is relatively high. The new packaging method to replace this traditional packaging method is to use thin film packaging. At present, the most commonly used thin film packaging methods include organic thin film packaging, inorganic thin film packaging, organic/inorganic hybrid thin film packaging, inorganic/inorganic thin film hybrid packaging, etc.
无机薄膜一般具有很好的机械性能,并且薄膜通常都是连续并且十分致密的,对于水汽和氧气有很高的隔阻能力。但无机薄膜在沉积的过程中,会无法避免地在薄膜上形成缺陷,比如针孔状的裂纹等;随着薄膜厚度的慢慢增加,在无机薄膜封装层会形成比较大的内应力。这些内应力的形成和缺陷的产生,会使得水汽和氧气很容易通过无机薄膜封装层进入器件内部,严重影响器件的性能,进而导致封装的效果大大降低。相比于无机薄膜,有机薄膜柔韧性能好,可以很好地用于柔性器件的封装;有机薄膜封装的器件重量也很轻,产品的性价比比较高。但与无机薄膜相比,有机薄膜对于水汽和氧气的阻隔性能比较差。Inorganic films generally have good mechanical properties, and the films are usually continuous and very dense, and have a high barrier capacity for water vapor and oxygen. However, during the deposition process of the inorganic thin film, defects, such as pinhole-like cracks, etc. will inevitably be formed on the thin film; as the thickness of the thin film increases slowly, relatively large internal stress will be formed in the inorganic thin film packaging layer. The formation of these internal stresses and the generation of defects will make water vapor and oxygen easily enter the device through the inorganic thin film packaging layer, seriously affecting the performance of the device, and thus greatly reducing the packaging effect. Compared with inorganic thin films, organic thin films have good flexibility and can be well used for the packaging of flexible devices; the weight of devices encapsulated by organic thin films is also very light, and the cost performance of products is relatively high. However, compared with inorganic films, organic films have poor barrier properties to water vapor and oxygen.
综合考虑有机与无机薄膜的这些优缺点,单纯采用有机或者无机薄膜来封装有机电子器件,都会使水汽和氧气比较容易的通过薄膜封装层而进入器件内部,严重影响器件的性能,进而导致封装的效果大大降低。而同时采用有机/无机薄膜层叠交替的封装方式时,无机薄膜封装层内针孔状的缺陷以及薄膜层的内应力都得到了大幅的减少,相比于采用单层的无机薄膜封装,封装的效果以及质量都得到了明显的提升。Considering the advantages and disadvantages of organic and inorganic thin films, simply using organic or inorganic thin films to encapsulate organic electronic devices will make it easier for water vapor and oxygen to enter the device through the thin film encapsulation layer, which will seriously affect the performance of the device and lead to packaging failure. The effect is greatly reduced. At the same time, when the organic/inorganic thin film packaging method is used alternately, the pinhole-like defects in the inorganic thin film packaging layer and the internal stress of the thin film layer have been greatly reduced. Compared with the single-layer inorganic thin film packaging, the packaging The effect and quality have been significantly improved.
本发明提供的一种基于氟化锂/聚乙烯醇交替薄膜的有机半导体器件薄膜封装技术不限定有机半导体器件的种类,其中使用的无机材料氟化锂对于器件的封装起到了很好的保护作用,而有机材料聚乙烯醇可以改善氟化锂的封装效果。这种氟化锂/聚乙烯醇交替薄膜封装能有效地提高有机半导体器件的寿命和稳定性。The thin film packaging technology for organic semiconductor devices based on lithium fluoride/polyvinyl alcohol alternating thin films provided by the present invention does not limit the type of organic semiconductor devices, and the inorganic material lithium fluoride used in it plays a very good role in protecting the packaging of devices , while the organic material polyvinyl alcohol can improve the encapsulation effect of lithium fluoride. The lithium fluoride/polyvinyl alcohol alternate film encapsulation can effectively improve the lifetime and stability of organic semiconductor devices.
【发明内容】【Content of invention】
本发明的目的是提供一种基于氟化锂/聚乙烯醇交替薄膜的有机半导体器件薄膜封装技术。The object of the present invention is to provide a thin film encapsulation technology for organic semiconductor devices based on lithium fluoride/polyvinyl alcohol alternating thin film.
利用本发明提供的基于氟化锂/聚乙烯醇交替薄膜的有机半导体器件薄膜封装技术封装的器件,其结构如图1所示,包括衬底(1)、有机半导体器件(5)、氟化锂缓冲层(6)、第一聚乙烯醇封装层(701)、第一氟化锂封装层(702)、第N聚乙烯醇封装层(N01)、第N氟化锂封装层(N02);氟化锂缓冲层覆盖于有机半导体器件之上,第一聚乙烯醇封装层覆盖于氟化锂缓冲层之上,第一氟化锂封装层覆盖于第一聚乙烯醇封装层之上,氟化锂封装层和聚乙烯醇封装层可不断交替重叠至第N氟化锂封装层,N为大于等于1的整数。该封装技术中,有机半导体器件的宽度小于衬底的宽度,且封装层覆盖整个有机半导体器件;氟化锂封装层的制备方法为真空热蒸发法,聚乙烯醇封装层的制备方法为溶液旋涂法;氟化锂缓冲层用于防止旋涂过程中聚乙烯醇水溶液对有机半导体器件造成影响。The device packaged by the organic semiconductor device thin film packaging technology based on lithium fluoride/polyvinyl alcohol alternating thin film provided by the present invention has a structure as shown in Figure 1, including a substrate (1), an organic semiconductor device (5), a fluorinated Lithium buffer layer (6), first polyvinyl alcohol encapsulation layer (701), first lithium fluoride encapsulation layer (702), Nth polyvinyl alcohol encapsulation layer (N01), Nth lithium fluoride encapsulation layer (N02) The lithium fluoride buffer layer covers the organic semiconductor device, the first polyvinyl alcohol encapsulation layer covers the lithium fluoride buffer layer, the first lithium fluoride encapsulation layer covers the first polyvinyl alcohol encapsulation layer, The lithium fluoride encapsulation layer and the polyvinyl alcohol encapsulation layer may alternately overlap until the Nth lithium fluoride encapsulation layer, where N is an integer greater than or equal to 1. In this encapsulation technology, the width of the organic semiconductor device is smaller than the width of the substrate, and the encapsulation layer covers the entire organic semiconductor device; the preparation method of the lithium fluoride encapsulation layer is vacuum thermal evaporation, and the preparation method of the polyvinyl alcohol encapsulation layer is solution spin Coating method; the lithium fluoride buffer layer is used to prevent the polyvinyl alcohol aqueous solution from affecting the organic semiconductor device during the spin coating process.
本发明提供的基于氟化锂/聚乙烯醇交替薄膜的有机半导体器件薄膜封装技术,包括如下步骤:The thin film packaging technology for organic semiconductor devices based on lithium fluoride/polyvinyl alcohol alternating thin films provided by the present invention comprises the following steps:
①在有机半导体器件(5)之上采用真空热蒸发的方式沉积氟化锂缓冲层,其尺度适当,以使待封装有机半导体器件的电极(2和4)露在外面,而其有机半导体活性层(3)被完全封装在里面;① Deposit a lithium fluoride buffer layer on the organic semiconductor device (5) by vacuum thermal evaporation, and its size is appropriate so that the electrodes (2 and 4) of the organic semiconductor device to be packaged are exposed outside, while the organic semiconductor is active. Layer (3) is fully encapsulated inside;
②在氟化锂缓冲层上用旋涂法制备聚乙烯醇封装层;②Preparing a polyvinyl alcohol encapsulation layer on the lithium fluoride buffer layer by spin coating;
③制备聚乙烯醇封装后,进行干燥处理;③After preparing polyvinyl alcohol for encapsulation, carry out drying treatment;
④在聚乙烯醇封装层上采用真空热蒸发的方式沉积氟化锂封装层;④ Deposit the lithium fluoride encapsulation layer on the polyvinyl alcohol encapsulation layer by vacuum thermal evaporation;
⑤重复上述步骤②-④,直至在氟化锂封装层上再制备第(N-1)层的聚乙烯醇/氟化锂交替薄膜(NO);⑤ Repeat the above steps ②-④ until the (N-1)th layer of polyvinyl alcohol/lithium fluoride alternating film (NO) is prepared on the lithium fluoride encapsulation layer;
⑥在200℃温度下对封装器件加热2小时,对聚乙烯醇进行交联。⑥Heating the packaged device at 200°C for 2 hours to cross-link the polyvinyl alcohol.
本发明的技术分析:Technical analysis of the present invention:
本发明提供的一种基于氟化锂/聚乙烯醇交替薄膜的封装技术首先在有机半导体器件的表面用真空热蒸发方法制备一层氟化锂薄膜,为后面旋涂平整的聚乙烯醇薄膜做好了保护,同时减小水溶剂对器件的影响;然后采用旋涂方法和真空热蒸发方法制备聚乙烯醇/氟化锂交替薄膜对有机半导体器件进行封装。A kind of encapsulation technology based on lithium fluoride/polyvinyl alcohol alternate film provided by the present invention first prepares a layer of lithium fluoride thin film on the surface of the organic semiconductor device by vacuum thermal evaporation method, and then spin-coats the smooth polyvinyl alcohol film as a The protection is good, and the influence of the water solvent on the device is reduced at the same time; then, the polyvinyl alcohol/lithium fluoride alternate film is prepared by a spin coating method and a vacuum thermal evaporation method to encapsulate the organic semiconductor device.
【附图说明】【Description of drawings】
图1为采用本发明提供的薄膜封装技术封装的有机半导体器件的结构示意图。图中,(1)为衬底、(2)为底电极、(3)为有源层、(4)为顶电极、(5)为有机半导体器件、(6)为氟化锂缓冲层、(701)为第一聚乙烯醇封装层、(702)为第一氟化锂封装层、(N01)为第N聚乙烯醇封装层、(N02)为第N氟化锂封装层。Fig. 1 is a schematic structural view of an organic semiconductor device encapsulated by the thin film encapsulation technology provided by the present invention. In the figure, (1) is the substrate, (2) is the bottom electrode, (3) is the active layer, (4) is the top electrode, (5) is the organic semiconductor device, (6) is the lithium fluoride buffer layer, (701) is the first polyvinyl alcohol encapsulation layer, (702) is the first lithium fluoride encapsulation layer, (N01) is the Nth polyvinyl alcohol encapsulation layer, (N02) is the Nth lithium fluoride encapsulation layer.
【具体实施方式】【Detailed ways】
下面以结构为“氧化铟锡(ITO)玻璃(导电衬底)/酞菁铜(有源层)/铝(顶电极)”的有机半导体二极管薄膜封装为例对本发明作进一步说明。The present invention will be further described below by taking an organic semiconductor diode thin film package with the structure of "indium tin oxide (ITO) glass (conductive substrate)/copper phthalocyanine (active layer)/aluminum (top electrode)" as an example.
实施例Example
本实施例按照下述步骤采用基于氟化锂/聚乙烯醇交替薄膜的封装技术对有机半导体器件进行薄膜封装:In this embodiment, the packaging technology based on lithium fluoride/polyvinyl alcohol alternate film is used to encapsulate the organic semiconductor device according to the following steps:
1)在清洗干净的ITO上面依次用真空热蒸发方法制备酞菁铜薄膜和铝薄膜;1) Prepare copper phthalocyanine thin film and aluminum thin film by vacuum thermal evaporation method successively on the cleaned ITO;
2)采用真空热蒸镀的方法制备氟化锂缓冲层,蒸发时的真空度为1×10-3帕斯卡,使用的加热源为钼舟。氟化锂的蒸发速率为6埃/秒,时间为1小时,制备的氟化锂薄膜厚度为2μm;2) The lithium fluoride buffer layer was prepared by vacuum thermal evaporation, the vacuum degree during evaporation was 1×10 −3 Pascal, and the heating source used was a molybdenum boat. The evaporation rate of lithium fluoride is 6 angstroms/second, the time is 1 hour, and the thickness of the prepared lithium fluoride film is 2 μm;
3)采用旋涂法制备聚乙烯醇封装薄膜,开始旋涂9秒钟内的转速为40转/分钟,之后的转速达到3000转/分钟,旋涂时间为3分钟。制备的聚乙烯醇薄膜厚度为1.13μm;3) The polyvinyl alcohol encapsulation film was prepared by spin coating, the rotation speed was 40 rpm within 9 seconds after the start of spin coating, and the subsequent rotation speed reached 3000 rpm, and the spin coating time was 3 minutes. The thickness of the prepared polyvinyl alcohol film is 1.13 μm;
4)制备好聚乙烯醇封装薄膜后,需要在恒温干燥箱中烘干,真空度为10帕斯卡,温度为40℃,时间为2小时;4) After the polyvinyl alcohol encapsulation film is prepared, it needs to be dried in a constant temperature drying oven with a vacuum of 10 Pascals, a temperature of 40°C, and a time of 2 hours;
5)采用真空热蒸镀的方法制备氟化锂封装薄膜,蒸发时的真空度为1×10-3帕斯卡,使用的加热源为钼舟,加热源的驱动电流电流为50A。氟化锂的蒸发速率为6埃/秒,时间为1小时,制备的氟化锂薄膜厚度为2μm;5) The lithium fluoride encapsulation thin film was prepared by vacuum thermal evaporation, the vacuum degree during evaporation was 1×10 -3 Pascal, the heating source used was a molybdenum boat, and the driving current of the heating source was 50A. The evaporation rate of lithium fluoride is 6 angstroms/second, the time is 1 hour, and the thickness of the prepared lithium fluoride film is 2 μm;
6)重复步骤2)~5),制备5周期的聚乙烯醇/氟化锂封装薄膜;6) Repeat steps 2) to 5) to prepare 5 cycles of polyvinyl alcohol/lithium fluoride encapsulation film;
7)将封装的器件在200℃温度下加热2小时,对聚乙烯醇进行交联。7) The packaged device is heated at 200° C. for 2 hours to cross-link the polyvinyl alcohol.
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