CN105374808A - Power module - Google Patents
Power module Download PDFInfo
- Publication number
- CN105374808A CN105374808A CN201510816485.6A CN201510816485A CN105374808A CN 105374808 A CN105374808 A CN 105374808A CN 201510816485 A CN201510816485 A CN 201510816485A CN 105374808 A CN105374808 A CN 105374808A
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- CN
- China
- Prior art keywords
- brachium pontis
- copper
- power switch
- layers
- lower brachium
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 103
- 239000010949 copper Substances 0.000 claims abstract description 101
- 229910052802 copper Inorganic materials 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000009413 insulation Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 77
- 239000002344 surface layer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-OIOBTWANSA-N copper-61 Chemical compound [61Cu] RYGMFSIKBFXOCR-OIOBTWANSA-N 0.000 description 2
- RYGMFSIKBFXOCR-YPZZEJLDSA-N copper-62 Chemical compound [62Cu] RYGMFSIKBFXOCR-YPZZEJLDSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000014616 translation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/70—Wind energy
- Y02E10/76—Power conversion electric or electronic aspects
Landscapes
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a power module, which comprises a bottom plate, a positive electrode, a negative electrode, an output electrode and an insulating substrate, wherein the insulating substrate is arranged on the bottom plate; insulating layers are arranged between the positive electrode and the bottom plate, between the negative electrode and the bottom plate and between the output electrode and the bottom plate; the insulating substrate comprises a heat conducting insulating layer and a copper layer; the copper layer is formed on the heat conducting insulating layer; a plurality of independent annular insulating grooves are formed in the copper layer of the insulating substrate; the copper layers surrounded by the insulating grooves are lower bridge arm copper layers; the copper layers at the outer sides of the insulating grooves are upper bridge arm copper layers; a lower bridge arm power chip unit is arranged on each lower bridge arm copper layer; an upper bridge arm power chip unit is arranged on each upper bridge arm copper layer; working current which flows outside from the positive electrode flows into the upper bridge arm power chip units through the upper bridge arm copper layers and finally flows to the output electrode; and freewheel current which flows outside from the negative electrode flows into the lower bridge arm copper layers through the lower bridge arm power chip units and finally flows to the output electrode.
Description
Technical field
The present invention relates to field of power electronics, particularly relate to a kind of power model.
Background technology
Power model is that power electronic electrical device is as metal-oxide semiconductor (MOS) (power MOS pipe), insulated-gate type field effect transistor (IGBT), the power switch module that fast recovery diode (FRD) is combined and packaged into by certain function, it is mainly used in electric automobile, photovoltaic generation, wind power generation, the power transfer under the various occasion such as industrial frequency conversion.
Because the power switch in module is repeatedly switched, the inductance produced by its structural allocation can reduce the reliability of power model.Existing module continuous current circuit area is large, and the continuous current circuit inductance of module is very large, and make the switching loss of module large, reliability is low.
Summary of the invention
Goal of the invention: the object of this invention is to provide the power model that a kind of stray inductance is low, switching loss is little, reliability is high.
Technical scheme: for reaching this object, the present invention by the following technical solutions:
Power model of the present invention, comprise base plate, positive electrode, negative electrode, output electrode and insulated substrate, insulated substrate is located on base plate, positive electrode, negative electrode and be equipped with insulating barrier between output electrode and base plate, insulated substrate comprises thermally conductive insulating layer and is formed at the layers of copper in this thermally conductive insulating layer; The layers of copper of described insulated substrate is provided with multiple separate annular insulation tank, the layers of copper that insulation tank surrounds is lower brachium pontis layers of copper, layers of copper outside insulation tank is upper brachium pontis layers of copper, and lower brachium pontis layers of copper is provided with lower brachium pontis power chip unit, and upper brachium pontis layers of copper is provided with brachium pontis power chip unit; The operating current flowed out by positive electrode flows into upper brachium pontis power chip unit by upper brachium pontis layers of copper, finally flow to output electrode; The freewheel current flowed out by negative electrode flows into lower brachium pontis layers of copper by lower brachium pontis power chip unit, finally flow to output electrode.
Further, described positive electrode and the direction superimposed layer that negative electrode is being parallel to base plate are arranged, and are also provided with insulating barrier between positive electrode and negative electrode.
Further, described insulation tank is etched in the layers of copper of insulated substrate.
Further, described upper brachium pontis power chip unit comprises the upper brachium pontis power chip group of multiple parallel connection, and lower brachium pontis power chip unit comprises the lower brachium pontis power chip group of multiple parallel connection; Described upper brachium pontis power chip group comprises the upper brachium pontis power switch and upper brachium pontis internal body diodes that are integrated in one, and upper brachium pontis power switch and the parallel connection of upper brachium pontis internal body diodes; Lower brachium pontis power chip unit comprises the lower brachium pontis power switch and lower brachium pontis internal body diodes that are integrated in one, and lower brachium pontis power switch and the parallel connection of lower brachium pontis internal body diodes; The freewheel current flowed out by negative electrode flows through the positive pole of lower brachium pontis internal body diodes, the negative pole of lower brachium pontis internal body diodes, then flow to output electrode through lower brachium pontis layers of copper.
Further, described upper brachium pontis power chip unit comprises the upper brachium pontis power chip group of multiple parallel connection, and lower brachium pontis power chip unit comprises the lower brachium pontis power chip group of multiple parallel connection; Described upper brachium pontis power chip group comprises upper brachium pontis power switch in parallel, upper brachium pontis internal body diodes and upper brachium pontis external diode, and upper brachium pontis power switch and upper brachium pontis internal body diodes are integrated in one; Lower brachium pontis power chip group comprises lower brachium pontis power switch in parallel, lower brachium pontis internal body diodes and lower brachium pontis external diode, and lower brachium pontis power switch and lower brachium pontis internal body diodes are integrated in one; The freewheel current flowed out by negative electrode flows through the negative pole of the positive pole of lower brachium pontis internal body diodes and lower brachium pontis external diode, lower brachium pontis internal body diodes and lower brachium pontis external diode, then flow to output electrode through lower brachium pontis layers of copper.
Further, described upper brachium pontis power chip unit comprises the upper brachium pontis power chip group of multiple parallel connection, and lower brachium pontis power chip unit comprises the lower brachium pontis power chip group of multiple parallel connection; Described upper brachium pontis power chip group comprises brachium pontis power switch, and upper brachium pontis power switch parallel connection outside has upper brachium pontis external diode; Lower brachium pontis power chip group comprises lower brachium pontis power switch, and lower brachium pontis power switch is parallel with lower brachium pontis external diode; The freewheel current flowed out by negative electrode flows through the positive pole of lower brachium pontis external diode, the negative pole of lower brachium pontis external diode, then flow to output electrode through lower brachium pontis layers of copper.
Further, described upper brachium pontis power switch and lower brachium pontis power switch are power MOS pipe; The operating current flowed out by positive electrode flows into the drain electrode of upper brachium pontis power switch by upper brachium pontis layers of copper, and the source electrode then through upper brachium pontis power switch flows out to output electrode.
Further, described upper brachium pontis power switch and lower brachium pontis power switch are IGBT pipe; The operating current flowed out by positive electrode flows into the collector electrode of upper brachium pontis power switch by upper brachium pontis layers of copper, and the emitter then through upper brachium pontis power switch flows out to output electrode.
Further, described upper brachium pontis power switch is metal-oxide-semiconductor, and lower brachium pontis power switch is IGBT pipe; The operating current flowed out by positive electrode flows into the drain electrode of upper brachium pontis power switch by upper brachium pontis layers of copper, and the source electrode then through upper brachium pontis power switch flows out to output electrode.
Further, described upper brachium pontis power switch is IGBT pipe, and lower brachium pontis power switch is metal-oxide-semiconductor; The operating current flowed out by positive electrode flows into the collector electrode of upper brachium pontis power switch by upper brachium pontis layers of copper, and the emitter then through upper brachium pontis power switch flows out to output electrode.
Beneficial effect:
1) in power model provided by the invention, the layers of copper of insulated substrate is provided with multiple separate annular insulation tank, the layers of copper that insulation tank surrounds is lower brachium pontis layers of copper, layers of copper outside insulation tank is upper brachium pontis layers of copper, lower brachium pontis layers of copper forms isolated island, and positive electrode and negative electrode lamination are arranged, the operating current flowed out by positive electrode is made to be split into multichannel, flow through the upper brachium pontis layers of copper between adjacent lower brachium pontis layers of copper respectively, and the freewheel current flowed out by negative electrode flows through in the middle of adjacent operating current, therefore, the area that operating current path and freewheeling current path surround is little, effectively can reduce stray inductance, reduce switching loss, improve reliability,
2) number of upper brachium pontis power chip group of the present invention and lower brachium pontis power chip group can be odd number or even numbers, makes design more flexible;
3) when power model provided by the invention is applied in high-speed power module field, stray inductance can be reduced better, reduce switching loss;
4) power model provided by the invention can adopt nation's alignment each electrode, each layers of copper and each power chip unit to be directly communicated with, and effectively simplifies circuit structure, reduces cost.
Accompanying drawing explanation
Fig. 1 is the current direction schematic diagram of embodiments of the invention;
Fig. 2 is the structure chart of embodiments of the invention;
Fig. 3 is the structure chart of the band housing of embodiments of the invention;
Fig. 4 is circuit diagram when upper brachium pontis power switch and lower brachium pontis power switch are IGBT pipe in embodiments of the invention;
Fig. 5 is circuit diagram when upper brachium pontis power switch and lower brachium pontis power switch are power MOS pipe in embodiments of the invention.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is further elaborated.
As shown in Figure 1, Figure 2, Figure 3 shows, the power model of first embodiment of the invention comprises base plate 1, the shell 9 insulated, positive electrode 2, negative electrode 3, output electrode 4, insulated substrate 5, upper brachium pontis power chip unit 6 and lower brachium pontis power chip unit 7.Shell 9 is arranged on base plate 1, a part is dug up in the middle of bottom it, one circle at edge retains, and positive electrode 2, negative electrode 3 and output electrode 4 are injection-moulded in the part that shell 9 bottom margin retains, also i.e. positive electrode 2, negative electrode 3 and be all insulate between output electrode 4 and base plate 1.Output electrode 4 is arranged at the one end bottom shell 9, and positive electrode 2 and negative electrode 3 are arranged at the other end bottom shell 9.Insulated substrate 5 is located on base plate 1, it is three-decker, comprise upper surface layers of copper, the aluminium oxide of lower surface layers of copper and centre or aluminium nitride ceramics, wherein upper surface layers of copper is connected with chip, be etched with circuit diagram, the distribution form changing upper surface layers of copper can change the path of insulated substrate 5 upper surface electric current.The upper surface layers of copper of insulated substrate 5 is etched with three separate annular insulation tanks 12, the layers of copper that insulation tank 12 surrounds is lower brachium pontis layers of copper, layers of copper outside insulation tank 12 is upper brachium pontis layers of copper, make three lower brachium pontis layers of copper isolated, formation isolated island each other, and except being provided with two insulation tanks 12 between adjacent two lower brachium pontis layers of copper, be also provided with the upper brachium pontis layers of copper of part.Upper brachium pontis layers of copper is provided with a upper brachium pontis power chip unit, and upper brachium pontis power chip unit comprises six upper brachium pontis power chip groups 6 in parallel; Lower brachium pontis layers of copper is provided with three lower brachium pontis power chip unit, and each lower brachium pontis power chip unit includes two lower brachium pontis power chip groups 7 in parallel, has six lower brachium pontis power chip groups 7.The number of upper brachium pontis power chip group and lower brachium pontis power chip group can be odd number or even numbers, makes design more flexible.
The first structure of upper brachium pontis power chip group 6 and lower brachium pontis power chip group 7 is: upper brachium pontis power chip group 6 comprises the upper brachium pontis power switch and upper brachium pontis internal body diodes that are integrated in one, and upper brachium pontis power switch and the parallel connection of upper brachium pontis internal body diodes; Lower brachium pontis power chip unit comprises the lower brachium pontis power switch and lower brachium pontis internal body diodes that are integrated in one, and lower brachium pontis power switch and the parallel connection of lower brachium pontis internal body diodes; The freewheel current 11 flowed out by negative electrode 3 flows through the positive pole of lower brachium pontis internal body diodes, the negative pole of lower brachium pontis internal body diodes, then flow to output electrode 4 through lower brachium pontis layers of copper.
The second structure of upper brachium pontis power chip group 6 and lower brachium pontis power chip group 7 is: upper brachium pontis power chip group 6 comprises upper brachium pontis power switch in parallel, upper brachium pontis internal body diodes and upper brachium pontis external diode, and upper brachium pontis power switch and upper brachium pontis internal body diodes are integrated in one; Lower brachium pontis power chip group 7 comprises lower brachium pontis power switch in parallel, lower brachium pontis internal body diodes and lower brachium pontis external diode, and lower brachium pontis power switch and lower brachium pontis internal body diodes are integrated in one; The freewheel current 11 flowed out by negative electrode 3 flows through the negative pole of the positive pole of lower brachium pontis internal body diodes and lower brachium pontis external diode, lower brachium pontis internal body diodes and lower brachium pontis external diode, then flow to output electrode 4 through lower brachium pontis layers of copper.
The third structure of upper brachium pontis power chip group 6 and lower brachium pontis power chip group 7 is: upper brachium pontis power chip group 6 comprises brachium pontis power switch, and upper brachium pontis power switch parallel connection outside has upper brachium pontis external diode; Lower brachium pontis power chip group 7 comprises lower brachium pontis power switch, and lower brachium pontis power switch is parallel with lower brachium pontis external diode; The freewheel current 11 flowed out by negative electrode 3 flows through the positive pole of lower brachium pontis external diode, the negative pole of lower brachium pontis external diode, then flow to output electrode 4 through lower brachium pontis layers of copper.
Wherein, upper brachium pontis power switch is power MOS pipe or IGBT pipe, and lower brachium pontis power switch is power MOS pipe or IGBT pipe.
When upper brachium pontis power switch and lower brachium pontis power switch are power MOS pipe, upper brachium pontis layers of copper comprises brachium pontis drain electrode layers of copper 51 and upper brachium pontis source electrode layers of copper 52, and lower brachium pontis layers of copper comprises lower brachium pontis drain electrode layers of copper 61 and lower brachium pontis source electrode layers of copper 62.As shown in Figure 1 and Figure 5, the operating current 10 flowed out by positive electrode 2 flows into the drain electrode of upper brachium pontis power switch by upper brachium pontis layers of copper, and the source electrode then through upper brachium pontis power switch flows out to output electrode 4.
When upper brachium pontis power switch and lower brachium pontis power switch are IGBT pipe, as shown in Figure 4, the operating current 10 flowed out by positive electrode 2 flows into the collector electrode of upper brachium pontis power switch by upper brachium pontis layers of copper, and the emitter then through upper brachium pontis power switch flows out to output electrode 4.
Upper brachium pontis power switch is metal-oxide-semiconductor, and lower brachium pontis power switch is IGBT pipe; The operating current 10 flowed out by positive electrode 2 flows into the drain electrode of upper brachium pontis power switch by upper brachium pontis layers of copper, and the source electrode then through upper brachium pontis power switch flows out to output electrode 4.
Upper brachium pontis power switch is IGBT pipe, and lower brachium pontis power switch is metal-oxide-semiconductor; The operating current 10 flowed out by positive electrode 2 flows into the collector electrode of upper brachium pontis power switch by upper brachium pontis layers of copper, and the emitter then through upper brachium pontis power switch flows out to output electrode 4.
Above brachium pontis power switch and lower brachium pontis power switch are power MOS pipe below, upper brachium pontis power chip group 6 and lower brachium pontis power chip group 7 all adopt the first structure to be example, introduce the process of power model work of the present invention and afterflow, alleged nation alignment is all translations of English bonding below:
During work, the grid of upper brachium pontis power switch accepts control signal and connects, operating current 10 flows out from positive electrode 2, upper brachium pontis drain electrode layers of copper 51 is flowed into through positive pole nation alignment 111, owing to being isolate between upper brachium pontis drain electrode layers of copper 51 and lower brachium pontis layers of copper, and between adjacent two lower brachium pontis layers of copper, be equipped with brachium pontis drain electrode layers of copper 51, therefore operating current 10 is split into four tunnels, wherein two-way flows through a left side for brachium pontis drain electrode layers of copper 51 respectively, right two rear flank flow into the drain electrode of upper brachium pontis power switch in upper brachium pontis power chip group 6, two-way flows through the rear drain electrode flowing into upper brachium pontis power switch in upper brachium pontis power chip group 6 of upper brachium pontis drain electrode layers of copper 51 between adjacent two lower brachium pontis layers of copper respectively in addition, then flowed out by the source electrode of brachium pontis power switch upper in upper brachium pontis power chip group, then upper brachium pontis source electrode layers of copper 52 is flow to by upper brachium pontis nation alignment 113, finally flow out to output electrode 4.
During afterflow, freewheel current 11 flows out from negative electrode 3, lower brachium pontis source electrode layers of copper 62 is flowed into through negative pole nation alignment 112, the positive pole of the lower brachium pontis internal body diodes in lower brachium pontis power chip group 7 is flowed into through lower brachium pontis nation alignment 114, then lower brachium pontis drain electrode layers of copper 61 is flowed out to from the negative pole of the lower brachium pontis internal body diodes in lower brachium pontis power chip group 7 respectively, then flow to upper brachium pontis source electrode layers of copper 52 through upper brachium pontis nation alignment 113, finally flow out to output electrode 4.
More than adopt nation's alignment each electrode, each layers of copper and each power chip unit to be directly communicated with, effectively simplify circuit structure, reduce cost.In addition, the mode of ultrasonic bonding also can be adopted each electrode, each layers of copper and each power chip unit to be directly communicated with.
In order to make operating current 10 and freewheel current 11 flow through different paths, not influencing each other, needing the structure changing positive electrode 2 and negative electrode 3, adopt polar stack to be formed, as shown in Figure 2.Described positive electrode 2 comprises and the positive electrode lead division 21 be connected bottom shell 9 and the positive electrode connecting portion 22 be connected with positive electrode lead division 21, negative electrode 3 comprises and the negative electrode lead division 31 be connected bottom shell 9 and the negative electrode connecting portion 32 be connected with negative electrode lead division 31, wherein, positive electrode connecting portion 22 and the direction superimposed layer that negative electrode connecting portion 32 is being parallel to base plate 1 are arranged, and be provided with insulating barrier between positive electrode connecting portion 22 and negative electrode connecting portion 32, make positive electrode 2, negative electrode 3 not conducting each other.Adopt the structure of this positive electrode 2 and negative electrode 3, operating current 10 and freewheel current 11 are flowed respectively on the path that two kinds different, and the structure be also separated with lower brachium pontis layers of copper with upper brachium pontis layers of copper adapts.
In power model provided by the invention, the layers of copper of insulated substrate 5 is provided with multiple separate annular insulation tank 12, the layers of copper that insulation tank 12 surrounds is lower brachium pontis layers of copper, layers of copper outside insulation tank 12 is upper brachium pontis layers of copper, lower brachium pontis layers of copper forms isolated island, and positive electrode connecting portion 22 and negative electrode connecting portion 32 lamination are arranged, the operating current 10 flowed out by positive electrode 2 is made to be split into multichannel, flow through the upper brachium pontis layers of copper between adjacent lower brachium pontis layers of copper respectively, and the freewheel current 11 flowed out by negative electrode 3 flows through in the middle of adjacent operating current 10, therefore, the area that operating current 10 path and freewheel current 11 path surround is little, effectively can reduce stray inductance, reduce switching loss, improve reliability.
When power model provided by the invention is applied in high-speed power module field, stray inductance can be reduced better, reduce switching loss.
Claims (10)
1. a power model, comprise base plate (1), positive electrode (2), negative electrode (3), output electrode (4) and insulated substrate (5), insulated substrate (5) is located on base plate (1), positive electrode (2), negative electrode (3) and be equipped with insulating barrier between output electrode (4) and base plate (1), insulated substrate (5) comprises thermally conductive insulating layer and is formed at the layers of copper in this thermally conductive insulating layer; It is characterized in that: the layers of copper of described insulated substrate (5) is provided with multiple separate annular insulation tank (12), the layers of copper that insulation tank (12) surrounds is lower brachium pontis layers of copper, the layers of copper in insulation tank (12) outside is upper brachium pontis layers of copper, lower brachium pontis layers of copper is provided with lower brachium pontis power chip unit, and upper brachium pontis layers of copper is provided with brachium pontis power chip unit; The operating current (10) flowed out by positive electrode (2) flows into upper brachium pontis power chip unit by upper brachium pontis layers of copper, finally flow to output electrode (4); The freewheel current (11) flowed out by negative electrode (3) flows into lower brachium pontis layers of copper by lower brachium pontis power chip unit, finally flow to output electrode (4).
2. power model according to claim 1, it is characterized in that: described positive electrode (2) and the direction superimposed layer that negative electrode (3) is being parallel to base plate (1) are arranged, and are also provided with insulating barrier between positive electrode (2) and negative electrode (3).
3. power model according to claim 1, is characterized in that: described insulation tank (12) is etched in the layers of copper of insulated substrate (5).
4. power model according to claim 1, it is characterized in that: described upper brachium pontis power chip unit comprises the upper brachium pontis power chip group (6) of multiple parallel connection, lower brachium pontis power chip unit comprises the lower brachium pontis power chip group (7) of multiple parallel connection; Described upper brachium pontis power chip group (6) comprises the upper brachium pontis power switch and upper brachium pontis internal body diodes that are integrated in one, and upper brachium pontis power switch and the parallel connection of upper brachium pontis internal body diodes; Lower brachium pontis power chip unit comprises the lower brachium pontis power switch and lower brachium pontis internal body diodes that are integrated in one, and lower brachium pontis power switch and the parallel connection of lower brachium pontis internal body diodes; The freewheel current (11) flowed out by negative electrode (3) flows through the positive pole of lower brachium pontis internal body diodes, the negative pole of lower brachium pontis internal body diodes, then flow to output electrode (4) through lower brachium pontis layers of copper.
5. power model according to claim 1, it is characterized in that: described upper brachium pontis power chip unit comprises the upper brachium pontis power chip group (6) of multiple parallel connection, lower brachium pontis power chip unit comprises the lower brachium pontis power chip group (7) of multiple parallel connection; Described upper brachium pontis power chip group (6) comprises upper brachium pontis power switch in parallel, upper brachium pontis internal body diodes and upper brachium pontis external diode, and upper brachium pontis power switch and upper brachium pontis internal body diodes are integrated in one; Lower brachium pontis power chip group (7) comprises lower brachium pontis power switch in parallel, lower brachium pontis internal body diodes and lower brachium pontis external diode, and lower brachium pontis power switch and lower brachium pontis internal body diodes are integrated in one; The freewheel current (11) flowed out by negative electrode (3) flows through the negative pole of the positive pole of lower brachium pontis internal body diodes and lower brachium pontis external diode, lower brachium pontis internal body diodes and lower brachium pontis external diode, then flow to output electrode (4) through lower brachium pontis layers of copper.
6. power model according to claim 1, it is characterized in that: described upper brachium pontis power chip unit comprises the upper brachium pontis power chip group (6) of multiple parallel connection, lower brachium pontis power chip unit comprises the lower brachium pontis power chip group (7) of multiple parallel connection; Described upper brachium pontis power chip group (6) comprises brachium pontis power switch, and upper brachium pontis power switch parallel connection outside has upper brachium pontis external diode; Lower brachium pontis power chip group (7) comprises lower brachium pontis power switch, and lower brachium pontis power switch is parallel with lower brachium pontis external diode; The freewheel current (11) flowed out by negative electrode (3) flows through the positive pole of lower brachium pontis external diode, the negative pole of lower brachium pontis external diode, then flow to output electrode (4) through lower brachium pontis layers of copper.
7. according to the power model in claim 4 to 6 described in any one, it is characterized in that: described upper brachium pontis power switch and lower brachium pontis power switch are power MOS pipe; The operating current (10) flowed out by positive electrode (2) flows into the drain electrode of upper brachium pontis power switch by upper brachium pontis layers of copper, and the source electrode then through upper brachium pontis power switch flows out to output electrode (4).
8. according to the power model in claim 4 to 6 described in any one, it is characterized in that: described upper brachium pontis power switch and lower brachium pontis power switch are IGBT pipe; The operating current (10) flowed out by positive electrode (2) flows into the collector electrode of upper brachium pontis power switch by upper brachium pontis layers of copper, and the emitter then through upper brachium pontis power switch flows out to output electrode (4).
9. according to the power model in claim 4 to 6 described in any one, it is characterized in that: described upper brachium pontis power switch is metal-oxide-semiconductor, lower brachium pontis power switch is IGBT pipe; The operating current (10) flowed out by positive electrode (2) flows into the drain electrode of upper brachium pontis power switch by upper brachium pontis layers of copper, and the source electrode then through upper brachium pontis power switch flows out to output electrode (4).
10. according to the power model in claim 4 to 6 described in any one, it is characterized in that: described upper brachium pontis power switch is IGBT pipe, and lower brachium pontis power switch is metal-oxide-semiconductor; The operating current (10) flowed out by positive electrode (2) flows into the collector electrode of upper brachium pontis power switch by upper brachium pontis layers of copper, and the emitter then through upper brachium pontis power switch flows out to output electrode (4).
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| CN201510816485.6A CN105374808B (en) | 2015-11-23 | 2015-11-23 | A kind of power module |
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| CN105914199A (en) * | 2016-06-17 | 2016-08-31 | 扬州国扬电子有限公司 | Power module for equalizing currents of chips connected in parallel |
| CN108447846A (en) * | 2018-06-06 | 2018-08-24 | 臻驱科技（上海）有限公司 | Power semiconductor module substrate and power semiconductor module |
| CN109360820A (en) * | 2018-11-05 | 2019-02-19 | 深圳市慧成功率电子有限公司 | The power module and power modules of multiple branches placement-and-routing |
| CN109768039A (en) * | 2018-12-17 | 2019-05-17 | 深圳市慧成功率电子有限公司 | A kind of two-side radiation power module |
| CN111106098A (en) * | 2019-12-13 | 2020-05-05 | 扬州国扬电子有限公司 | Power module with low parasitic inductance layout |
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| CN105914199A (en) * | 2016-06-17 | 2016-08-31 | 扬州国扬电子有限公司 | Power module for equalizing currents of chips connected in parallel |
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| CN111106098B (en) * | 2019-12-13 | 2021-10-22 | 扬州国扬电子有限公司 | Power module with low parasitic inductance layout |
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