CN105372891A - Array substrate and display device - Google Patents
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- CN105372891A CN105372891A CN201510887454.XA CN201510887454A CN105372891A CN 105372891 A CN105372891 A CN 105372891A CN 201510887454 A CN201510887454 A CN 201510887454A CN 105372891 A CN105372891 A CN 105372891A
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- 239000000758 substrate Substances 0.000 title claims abstract description 57
- 239000011159 matrix material Substances 0.000 claims abstract description 4
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ZXTFQUMXDQLMBY-UHFFFAOYSA-N alumane;molybdenum Chemical compound [AlH3].[Mo] ZXTFQUMXDQLMBY-UHFFFAOYSA-N 0.000 description 1
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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Abstract
本发明描述了一种阵列基板以及显示装置,所述阵列基板包括像素阵列,由多个像素单元以m行×n列的矩阵方式排布构成;多条沿行方向延伸的栅极线,多条沿列方向延伸的数据线和扫描线,所述扫描线与所述栅极线中的一条连接且与其余所述栅极线绝缘;相邻两列像素单元之间为第一走线区或者第二走线区,所述第一走线区和第二走线区沿行方向交替排布;每个第一走线区中设有两条所述数据线,每个第二走线区中设有至多一条所述扫描线。本发明提供的阵列基板可以增加扫描线与数据线之间的距离,降低数据线上电压耦合,解决了显示装置在中低灰阶时出现部分像素过亮的情况。
The present invention describes an array substrate and a display device. The array substrate includes a pixel array, which is composed of a plurality of pixel units arranged in a matrix of m rows×n columns; a plurality of gate lines extending along the row direction, and a plurality of A data line and a scan line extending along the column direction, the scan line is connected to one of the gate lines and is insulated from the rest of the gate lines; between two adjacent columns of pixel units is the first wiring area Or the second routing area, the first routing area and the second routing area are arranged alternately along the row direction; two data lines are arranged in each first routing area, and each second routing area There is at most one scan line in a region. The array substrate provided by the invention can increase the distance between the scanning line and the data line, reduce the voltage coupling on the data line, and solve the problem that some pixels of the display device are too bright when the gray scale is low or medium.
Description
技术领域technical field
本发明涉及薄膜晶体管(ThinFilmTransistor,TFT)显示技术领域,特别是涉及一种阵列基板及包括该阵列基板的显示装置。The present invention relates to the field of thin film transistor (ThinFilm Transistor, TFT) display technology, in particular to an array substrate and a display device including the array substrate.
背景技术Background technique
阵列基板,又称为TFT基板,具有体积小、功耗低等特点,在当前的显示器领域占据了主导地位。Array substrates, also known as TFT substrates, have the characteristics of small size and low power consumption, and occupy a dominant position in the current display field.
目前的TFT基板上包括像素阵列,像素阵列包括多个阵列式排布的像素单元,每个像素单元内设置TFT开关以及像素电极。TFT开关的功能是一个三端开关管,一端是栅极,对应栅极线;一端是源极,对应数据线;一端是漏极,对应像素电极。阵列基板上还包括栅极驱动电路和数据驱动电路,栅极驱动电路向栅极线输入扫描信号,数据驱动电路向数据线输入数据信号。栅极驱动电路和数据驱动电路设置在像素阵列以外的区域。A current TFT substrate includes a pixel array, and the pixel array includes a plurality of pixel units arranged in an array, and a TFT switch and a pixel electrode are arranged in each pixel unit. The function of the TFT switch is a three-terminal switch tube, one end is the gate, which corresponds to the gate line; one end is the source, which corresponds to the data line; the other end is the drain, which corresponds to the pixel electrode. The array substrate also includes a gate drive circuit and a data drive circuit, the gate drive circuit inputs scan signals to the gate lines, and the data drive circuit inputs data signals to the data lines. The gate driving circuit and the data driving circuit are arranged outside the pixel array.
图1是现有技术中一种阵列基板的俯视图。如图1,阵列基板1包括像素阵列2,多条栅极线4和多条数据线3。栅极线4和数据线3需要连接至驱动芯片6,驱动芯片6为栅极线4和数据线3提供驱动信号。栅极线4通过栅极线连接部4-1连接至驱动芯片6,栅极线连接部4-1设置在像素阵列2的两侧,因此栅极线连接部4-1在阵列基板1上占用了一部分区域,导致阵列基板1的边框较宽。FIG. 1 is a top view of an array substrate in the prior art. As shown in FIG. 1 , an array substrate 1 includes a pixel array 2 , a plurality of gate lines 4 and a plurality of data lines 3 . The gate lines 4 and the data lines 3 need to be connected to the driving chip 6 , and the driving chip 6 provides driving signals for the gate lines 4 and the data lines 3 . The gate line 4 is connected to the drive chip 6 through the gate line connection part 4-1, and the gate line connection part 4-1 is arranged on both sides of the pixel array 2, so the gate line connection part 4-1 is on the array substrate 1 Part of the area is occupied, resulting in a wider frame of the array substrate 1 .
发明内容Contents of the invention
有鉴于此,本发明提供一种阵列基板及包括该阵列基板的显示装置。In view of this, the present invention provides an array substrate and a display device including the array substrate.
本发明提供一种阵列基板,包括:像素阵列,所述像素阵列包括多个像素单元,所述像素单元以m行×n列的矩阵方式排布,m和n均为正整数;The present invention provides an array substrate, comprising: a pixel array, the pixel array includes a plurality of pixel units, the pixel units are arranged in a matrix of m rows×n columns, and m and n are both positive integers;
所述阵列基板还包括多条沿行方向延伸的栅极线,多条沿列方向延伸的数据线和扫描线,扫描线与栅极线中的一条连接且与其余的栅极线绝缘;The array substrate further includes a plurality of gate lines extending along the row direction, a plurality of data lines and scanning lines extending along the column direction, and the scanning line is connected to one of the gate lines and is insulated from the rest of the gate lines;
第一走线区和第二走线区,相邻两列像素单元之间为第一走线区或者第二走线区,并且第一走线区和第二走线区沿行方向交替排布;每个第一走线区中设有两条数据线,每个第二走线区中设有至多一条扫描线。The first routing area and the second routing area, between two adjacent columns of pixel units is the first routing area or the second routing area, and the first routing area and the second routing area are arranged alternately along the row direction two data lines are arranged in each first routing area, and at most one scanning line is arranged in each second routing area.
本发明还提供一种显示装置,包括:本发明所提供的阵列基板。The present invention also provides a display device, including: the array substrate provided by the present invention.
与现有技术相比,本发明至少具有如下突出的优点之一:不仅窄边框;而且扫描线与数据线平行设置且在扫描线和数据线间设置了像素单元,减少了二者之间的干扰,即降低了数据线上电压耦合,解决了显示装置在中低灰阶时出现部分像素过亮的情况。Compared with the prior art, the present invention has at least one of the following outstanding advantages: not only the narrow frame; but also the scanning line and the data line are arranged in parallel and the pixel unit is arranged between the scanning line and the data line, which reduces the distance between the two. Interference, that is, reduces the voltage coupling on the data line, and solves the problem that some pixels of the display device are too bright when the display device is in a low-middle gray scale.
附图说明Description of drawings
图1是现有技术中一种阵列基板的俯视图;FIG. 1 is a top view of an array substrate in the prior art;
图2是本发明中一种阵列基板的俯视图;Fig. 2 is a top view of an array substrate in the present invention;
图3是本发明中再一种阵列基板的俯视图;Fig. 3 is a top view of another array substrate in the present invention;
图4是本发明中又一种阵列基板的俯视图;Fig. 4 is a top view of another array substrate in the present invention;
图5是一种像素单元的俯视图;Fig. 5 is a top view of a pixel unit;
图6是图5中沿AA’线和BB’线的剖视图;Fig. 6 is a sectional view along AA' line and BB' line among Fig. 5;
图7是再一种像素单元的俯视图;Fig. 7 is a top view of another pixel unit;
图8是图7中沿CC’线和DD’线的剖视图;Fig. 8 is a sectional view along CC' line and DD' line among Fig. 7;
图9是又一种像素单元的俯视图;Fig. 9 is a top view of another pixel unit;
图10是图9中沿EE’线和FF’线的剖视图;Fig. 10 is a sectional view along EE' line and FF' line among Fig. 9;
图11是本发明中又一种阵列基板的俯视图;Fig. 11 is a top view of another array substrate in the present invention;
图12是沿图11中GG’线的剖视图;Fig. 12 is a sectional view along GG' line among Fig. 11;
图13是本发明中又一种阵列基板的俯视图;Fig. 13 is a top view of another array substrate in the present invention;
图14是沿图13中HH’线的剖视图;Fig. 14 is a sectional view along HH' line among Fig. 13;
图15是图9中沿EE’线和FF’线的另一种剖视图;Fig. 15 is another kind of sectional view along EE ' line and FF ' line among Fig. 9;
图16是又一种像素单元的俯视图;Fig. 16 is a top view of another pixel unit;
图17是图16中沿II’线和JJ’线的剖视图;Fig. 17 is a sectional view along II' line and JJ' line among Fig. 16;
具体实施方式detailed description
为使本发明的上述目的、特征和优点能够更为明显易懂,下面将结合附图和实施例对本发明做进一步说明。In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described below in conjunction with the accompanying drawings and embodiments.
需要说明的是,在以下描述中阐述了具体细节以便于充分理解本发明。但是本发明能够以多种不同于在此描述的其它方式来实施,本领域技术人员可以在不违背本发明内涵的情况下做类似推广。因此本发明不受下面公开的具体实施方式的限制。It should be noted that in the following description, specific details are set forth in order to fully understand the present invention. However, the present invention can be implemented in many other ways than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the present invention is not limited to the specific embodiments disclosed below.
图2是本发明中一种阵列基板的示意图。请参考图2,阵列基板100包括像素阵列110,像素阵列110包括多个像素单元111。需要说明的是,像素单元111包括栅极、源极、漏极组成的薄膜晶体管、像素电极等结构,为了图示简洁,突出本发明的内容,在图2中以本领域常用的简图示意了每一像素单元中的薄膜晶体管、像素电极等结构。多个像素单元111以m行×n列的矩阵方式排布,m和n均为正整数。FIG. 2 is a schematic diagram of an array substrate in the present invention. Please refer to FIG. 2 , the array substrate 100 includes a pixel array 110 , and the pixel array 110 includes a plurality of pixel units 111 . It should be noted that the pixel unit 111 includes a thin film transistor composed of a gate, a source, and a drain, and a pixel electrode. Structures such as thin film transistors and pixel electrodes in each pixel unit. A plurality of pixel units 111 are arranged in a matrix of m rows×n columns, and both m and n are positive integers.
阵列基板100还包括多条沿行方向X延伸的栅极线10和多条沿列方向Y延伸的数据线20,栅极线10和数据线20用于驱动像素单元111。阵列基板100还包括多条沿列方向Y延伸的扫描线30。扫描线30与栅极线10中的一条连接,与其余的栅极线10绝缘。需要说明的是,在本发明中,所述行方向X和列方向Y互相垂直,但本发明对此不做限制。The array substrate 100 further includes a plurality of gate lines 10 extending along the row direction X and a plurality of data lines 20 extending along the column direction Y. The gate lines 10 and the data lines 20 are used to drive the pixel units 111 . The array substrate 100 also includes a plurality of scan lines 30 extending along the column direction Y. The scan line 30 is connected to one of the gate lines 10 and is insulated from the other gate lines 10 . It should be noted that, in the present invention, the row direction X and the column direction Y are perpendicular to each other, but the present invention is not limited thereto.
阵列基板100还包括第一走线区120和第二走线区130,相邻两列像素单元111之间为第一走线区120或第二走线区130,所述第一走线区120和第二走线区130沿着行方向X交替排布,每个第一走线区120中设有两条数据线20,每条数据线20都与其相邻的,即距离最近的一列像素单元111连接。每个第二走线区130中设有一条扫描线30。The array substrate 100 also includes a first wiring area 120 and a second wiring area 130, between two adjacent columns of pixel units 111 is the first wiring area 120 or the second wiring area 130, the first wiring area 120 and the second wiring area 130 are arranged alternately along the row direction X, and each first wiring area 120 is provided with two data lines 20, and each data line 20 is adjacent to it, that is, the nearest column The pixel units 111 are connected. One scan line 30 is disposed in each second wiring area 130 .
本发明中,存在当第二走线区130的数量多于扫描线30的数量的情况,请参考图3,图3与图2的不同之处在于,当第二走线区130的数量多于扫描线30的数量,部分第二走线区130-1中不设置扫描线,因此本发明中第二走线区130中设有至多一条扫描线30。In the present invention, when the number of the second routing area 130 is greater than the number of scanning lines 30, please refer to FIG. 3. The difference between FIG. 3 and FIG. 2 is that when the number of the second routing area 130 is large Due to the number of scanning lines 30 , there are no scanning lines in part of the second routing area 130 - 1 , so in the present invention, there is at most one scanning line 30 in the second routing area 130 .
本发明中,阵列基板100还包括虚拟线(dummy线)。如图4,以m=5,n=14为例,像素阵列100内包括5条栅极线10和5条扫描线30,6个第二走线区130,其中5个第二走线区130中设置一条扫描线30,因此多余出一个第二走线区130-2不设置扫描线。当第二走线区130-2不设置扫描线时,存在数据线20对像素单元111的不平衡影响,为了避免这种影响,在第二走线区130-2内可以设置一条虚拟线50,用以平衡像素电极受到的电容耦合效应,提高显示品质。虚拟线50的设置方式与扫描线30相同,均为沿列方向Y延伸,但实质上虚拟线50并不与栅极线10连接,可以悬空设置也可以接入1/2V的电压。设置扫描线30的第二走线区130和设置虚拟线50的第二走线区130-2可以任意组合分布。In the present invention, the array substrate 100 further includes dummy lines. As shown in Figure 4, taking m=5, n=14 as an example, the pixel array 100 includes 5 gate lines 10, 5 scan lines 30, 6 second wiring areas 130, and 5 second wiring areas One scan line 30 is set in 130, so there is one more second wiring area 130-2 without a scan line. When the second wiring area 130-2 does not have a scanning line, there is an unbalanced influence of the data line 20 on the pixel unit 111. In order to avoid this influence, a dummy line 50 can be set in the second wiring area 130-2. , to balance the capacitive coupling effect on the pixel electrodes and improve the display quality. The setting method of the virtual line 50 is the same as that of the scanning line 30 , both of which extend along the column direction Y, but the virtual line 50 is not connected to the gate line 10 in essence, and can be suspended or connected to a voltage of 1/2V. The second wiring area 130 for setting the scan line 30 and the second wiring area 130 - 2 for setting the dummy line 50 can be distributed in any combination.
本发明中,存在当第二走线区130的数量少于扫描线30的数量的情况,可以将多余的扫描线30设置在像素阵列110的一侧或两侧。In the present invention, when the number of the second wiring area 130 is less than the number of the scan lines 30 , the redundant scan lines 30 can be arranged on one side or both sides of the pixel array 110 .
本发明中,优选的第一列像素单元和第二列像素单元之间为第一走线区,如果n为奇数时,第n列像素单元单独设置一根数据线20。当第一列像素单元和第二列像素单元之间为第二走线区时,需要为第一列和/或第n列像素单元单独设置一根数据线20。In the present invention, preferably, the first wiring area is between the pixel units in the first column and the pixel units in the second column. If n is an odd number, a single data line 20 is provided for the pixel units in the nth column. When there is a second wiring area between the pixel units in the first column and the pixel units in the second column, one data line 20 needs to be separately provided for the pixel units in the first column and/or the nth column.
请继续参考图4,在本发明中,第一基板100上还设有数据驱动电路140和扫描驱动电路150,每条数据线20连接至数据驱动电路140,数据驱动电路140为数据线20提供数据信号;每条栅极线10通过扫描线30连接至所述扫描驱动电路150,扫描驱动电路150为栅极线10提供扫描信号。数据驱动电路140和扫描驱动电路150都设置在像素阵列110的同一侧。Please continue to refer to FIG. 4 , in the present invention, a data drive circuit 140 and a scan drive circuit 150 are also provided on the first substrate 100 , each data line 20 is connected to the data drive circuit 140 , and the data drive circuit 140 provides data lines 20 Data signal; each gate line 10 is connected to the scan driving circuit 150 through a scan line 30 , and the scan drive circuit 150 provides scan signals for the gate lines 10 . Both the data driving circuit 140 and the scanning driving circuit 150 are disposed on the same side of the pixel array 110 .
在本发明中,扫描线30与栅极线10的连接方式有两种:In the present invention, there are two ways to connect the scan lines 30 and the gate lines 10:
第一种连接方式中,可以在阵列基板100的制备过程中,使用同一道光刻或者掩膜(mask),将栅极线10与扫描线30的部分走线以相同的材质做在同一膜层,在连接部分,扫描线30与栅极线10中的一条相交实现连接;在绝缘部分,扫描线30使用跨桥与其余栅极线10绝缘,或者栅极线10使用跨桥与其余扫描线30绝缘。In the first connection method, in the preparation process of the array substrate 100, the same photolithography or mask can be used to make part of the wiring of the gate line 10 and the scanning line 30 on the same film with the same material. Layer, in the connection part, the scan line 30 intersects with one of the gate lines 10 to realize connection; in the insulation part, the scan line 30 uses a bridge to insulate from the rest of the gate lines 10, or the gate line 10 uses a bridge to insulate from the rest of the scan lines. Wire 30 is insulated.
为了清楚的说明本发明中阵列基板100上各膜层间的关系,图5中示意了具体的像素单元的结构,像素单元111内具有与栅极15相连的栅极线10,与源极12相连的数据线20,与漏极11相连的像素电极13,扫描线30。扫描线30包括多段扫描走线部31和多个扫描跨接部32,扫描跨接部32包括扫描连接孔33和扫描连接部34。像素单元111还包括公共电极,因为与本实施例的发明点无直接关系,因此未示出。In order to clearly illustrate the relationship between the film layers on the array substrate 100 in the present invention, the structure of a specific pixel unit is shown in FIG. The connected data line 20 , the pixel electrode 13 connected to the drain electrode 11 , and the scanning line 30 . The scan line 30 includes a multi-segment scan line portion 31 and a plurality of scan jumper portions 32 , and the scan jumper portion 32 includes a scan connection hole 33 and a scan connection portion 34 . The pixel unit 111 also includes a common electrode, which is not shown because it is not directly related to the invention of this embodiment.
请参考图6,需要说明的是,为了清楚的示意不同膜层在不同位置处的位置关系,图6分为两部分,其中第一部分为沿图5中AA’线的剖视图;第二部分为沿图5中BB’线的剖视图。Please refer to Figure 6. It should be noted that, in order to clearly illustrate the positional relationship of different film layers at different positions, Figure 6 is divided into two parts, wherein the first part is a cross-sectional view along the line AA' in Figure 5; the second part is Sectional view along line BB' in Fig. 5.
请继续参考图6,阵列基板100中包括源极11,漏极12,栅极15,像素电极13,栅极线10和栅极绝缘层50。扫描线30包括多段扫描走线部31和多个扫描跨接部32,扫描走线部31和扫描跨接部32异层,扫描跨接部32包括扫描连接孔33和扫描连接部34,扫描走线部31和栅极线10同层,扫描连接部34和数据线20同层。扫描线30在需要与栅极线10绝缘的位置处,通过扫描连接部34和两个扫描连接孔33将相邻的两段扫描走线部31连接,从而避免与栅极线10相交实现绝缘。同时,因为扫描线30的多段扫描走线部31和多个扫描跨接部32都可以利用现有的膜层刻蚀形成,可以在不增加mask的情况下实现该技术方案。Please continue to refer to FIG. 6 , the array substrate 100 includes a source 11 , a drain 12 , a gate 15 , a pixel electrode 13 , a gate line 10 and a gate insulating layer 50 . The scan line 30 includes a multi-segment scan line part 31 and a plurality of scan jumper parts 32, the scan line part 31 and the scan jumper part 32 are in different layers, the scan jumper part 32 includes a scan connection hole 33 and a scan connection part 34, and the scan line part 31 and the scan jumper part 32 are in different layers. The wiring part 31 is on the same layer as the gate line 10 , and the scanning connection part 34 is on the same layer as the data line 20 . At the position where the scanning line 30 needs to be insulated from the gate line 10, two adjacent sections of the scanning line 31 are connected through the scanning connection part 34 and the two scanning connection holes 33, so as to avoid intersecting with the gate line 10 to achieve insulation . At the same time, since the multi-segment scanning line part 31 and the multiple scanning jumper parts 32 of the scanning line 30 can be formed by using existing film layer etching, this technical solution can be realized without increasing the mask.
在扫描线30与所栅极线10的第一种连接方式中,请参考图7,图7是再一种像素单元的俯视图,图7与图5的不同之处在于,栅极线10设置多个栅极走线部11和多个栅极跨接部12,栅极跨接部12包括栅极连接孔13和栅极连接部14。In the first connection mode between the scan line 30 and the gate line 10, please refer to FIG. 7. FIG. 7 is a top view of another pixel unit. The difference between FIG. 7 and FIG. 5 is that the gate line 10 is set A plurality of gate wiring parts 11 and a plurality of gate jumper parts 12 , the gate jumper parts 12 include a gate connection hole 13 and a gate connection part 14 .
请参考图8,图8分为两部分,其中第一部分为沿图7中CC’线的剖视图;第二部分为沿图7中DD’线的剖视图。栅极走线部11和栅极跨接部12异层,栅极跨接部12包括栅极连接孔13和栅极连接部14,栅极走线部11和扫描线30同层,栅极连接部14和数据线20同层。在扫描线30在需要与栅极线10绝缘的位置处,栅极线10通过栅极跨接部12实现与扫描线30绝缘。Please refer to Figure 8, Figure 8 is divided into two parts, wherein the first part is a cross-sectional view along line CC' in Figure 7; the second part is a cross-sectional view along line DD' in Figure 7. The gate wiring part 11 and the gate jumper part 12 are in different layers, the gate jumper part 12 includes a gate connection hole 13 and a gate connection part 14, the gate wiring part 11 and the scanning line 30 are in the same layer, and the gate The connecting portion 14 is on the same layer as the data line 20 . Where the scan line 30 needs to be insulated from the gate line 10 , the gate line 10 is isolated from the scan line 30 through the gate jumper 12 .
扫描线30与所栅极线10的第二种连接方式是:扫描线30与所述栅极线10异层并且二者之间的膜层上设置过孔,扫描线30通过所述过孔与栅极线10中的一条连接。具体实施方式如下:The second connection mode between the scanning line 30 and the gate line 10 is: the scanning line 30 is in a different layer from the gate line 10 and a via hole is set on the film layer between the two, and the scanning line 30 passes through the via hole One of the gate lines 10 is connected. The specific implementation is as follows:
图9是又一种像素单元的俯视图,参考图9,像素单元111内具有与栅极15相连的栅极线10,与源极12相连的数据线20,与漏极11相连的像素电极13和扫描线30。其中,扫描线30通过过孔40和一条栅极线10连接。FIG. 9 is a top view of another pixel unit. Referring to FIG. 9, the pixel unit 111 has a gate line 10 connected to the gate 15, a data line 20 connected to the source 12, and a pixel electrode 13 connected to the drain 11. and scanline 30. Wherein, the scan line 30 is connected to a gate line 10 through a via hole 40 .
请参考图10,图10分为两部分,其中第一部分为沿图9中EE’线的剖视图;第二部分为沿图9中FF’线的剖视图。扫描线30与数据线20设置在同一膜层,栅极绝缘层50中具有过孔40,扫描线30通过过孔40和栅极线10中的一条连接,与其余栅极线绝缘。Please refer to Fig. 10, Fig. 10 is divided into two parts, wherein the first part is a sectional view along EE' line in Fig. 9; the second part is a sectional view along FF' line in Fig. 9 . The scanning line 30 and the data line 20 are arranged in the same film layer, and the gate insulating layer 50 has a via hole 40, and the scanning line 30 is connected to one of the gate lines 10 through the via hole 40, and is insulated from the other gate lines.
图11是本发明中又一种阵列基板的俯视图,当扫描线30与数据线20设置在同一膜层时,扫描线30与数据线20在像素阵列110所在区域内均沿列方向Y延伸,不存在相交的问题,但是扫描线30与数据线20需要分别连接至数据驱动电路140和扫描驱动电路150,在像素阵列110和数据驱动电路140以及扫描驱动电路150之间的区域A内,存在数据驱动电路140和扫描驱动电路150相交的问题。为了解决这一技术问题,需要将扫描线30与数据线20在区域A内设置在不同膜层。数据线20包括第一数据线部20-1、第二数据线部20-2和数据线换线孔21,数据线换线孔21连接一数据线部20-1和第二数据线部20-2。第一数据线部20-1在像素阵列110所在区域内沿列方向Y延伸,并且第一数据线部20-1与扫描线30设置在同一膜层。11 is a top view of another array substrate in the present invention. When the scanning lines 30 and the data lines 20 are arranged in the same film layer, the scanning lines 30 and the data lines 20 both extend along the column direction Y in the region where the pixel array 110 is located. There is no intersection problem, but the scan line 30 and the data line 20 need to be connected to the data drive circuit 140 and the scan drive circuit 150 respectively, in the area A between the pixel array 110 and the data drive circuit 140 and the scan drive circuit 150, there is The problem that the data driving circuit 140 and the scanning driving circuit 150 intersect. In order to solve this technical problem, it is necessary to arrange the scan lines 30 and the data lines 20 in different film layers in the region A. The data line 20 includes a first data line part 20-1, a second data line part 20-2 and a data line changing hole 21, and the data line changing hole 21 connects a data line part 20-1 and the second data line part 20 -2. The first data line portion 20 - 1 extends along the column direction Y in the region where the pixel array 110 is located, and the first data line portion 20 - 1 and the scan line 30 are arranged in the same film layer.
请参考图12,图12是沿图11中GG’线的剖视图,第二数据线部20-2和栅极线10设置在同一膜层,栅极绝缘层50中设置数据线换线孔21,数据线换线孔21连接一数据线部20-1和第二数据线部20-2。在区域A内,扫描线30与数据线20异层,避免了相交。Please refer to FIG. 12. FIG. 12 is a cross-sectional view along line GG' in FIG. , the data line changing hole 21 connects the first data line part 20-1 and the second data line part 20-2. In the region A, the scan lines 30 and the data lines 20 are in different layers, avoiding intersection.
在本实施例中,还可以保持数据线20设置在同一膜层,将扫描线30在区域A内换线至栅极线10所在膜层,避免与数据线20相交。请参考图13,图13与图11的不同之处在于,扫描线30包括第一扫描线部30-1、第二扫描线部30-2和扫描线换线孔31。第一扫描线部30-1在像素阵列110所在区域内沿列方向Y延伸,并且第一扫描线部30-1数据线20设置在同一膜层。In this embodiment, the data line 20 can also be kept on the same film layer, and the scanning line 30 can be switched to the film layer where the gate line 10 is located in the area A to avoid intersecting with the data line 20 . Please refer to FIG. 13 . The difference between FIG. 13 and FIG. 11 is that the scan line 30 includes a first scan line portion 30 - 1 , a second scan line portion 30 - 2 and a scan line replacement hole 31 . The first scan line portion 30 - 1 extends along the column direction Y in the region where the pixel array 110 is located, and the data lines 20 of the first scan line portion 30 - 1 are disposed on the same film layer.
请参考图14,图14是沿图13中HH’线的剖视图,第二扫描线部30-2与栅极线10设置在同一膜层,栅极绝缘层50中设置扫描线换线孔31,第一扫描线部30-1与所述第二扫描线部30-2通过所述扫描线换线孔31连接。在区域A内,扫描线30与数据线20异层,避免了相交。Please refer to FIG. 14. FIG. 14 is a cross-sectional view along line HH' in FIG. , the first scan line part 30 - 1 is connected to the second scan line part 30 - 2 through the scan line changing hole 31 . In the region A, the scan lines 30 and the data lines 20 are in different layers, avoiding intersection.
扫描线30与所栅极线10的第二种连接方式中,阵列基板100还可以包括触控电极和触控电极引线,将触摸功能集成至阵列基板100内,可以减薄模组整体的厚度。In the second connection mode between the scanning lines 30 and the gate lines 10, the array substrate 100 can also include touch electrodes and touch electrode leads, and the touch function can be integrated into the array substrate 100, which can reduce the overall thickness of the module. .
参考图15,图15分为两部分,其中第一部分为沿图9中EE’线的剖视图;第二部分为沿图9中FF’线的剖视图。图15中,阵列基板100还包括触控电极14和触控电极引线16,触控电极14通过触控电极引线16与设置在阵列基板上的驱动单元相连。这种情况下可以将扫描线30与触控电极引线16使用同一道光刻或者掩膜(mask)制作在同一层,扫描线30与栅极线10中的一条通过过孔40连接。Referring to Fig. 15, Fig. 15 is divided into two parts, wherein the first part is a sectional view along EE' line in Fig. 9; the second part is a sectional view along FF' line in Fig. 9 . In FIG. 15 , the array substrate 100 further includes touch electrodes 14 and touch electrode leads 16 , and the touch electrodes 14 are connected to the driving unit disposed on the array substrate through the touch electrode leads 16 . In this case, the scan line 30 and the touch electrode lead 16 can be fabricated on the same layer using the same photolithography or mask, and the scan line 30 is connected to one of the gate lines 10 through the via hole 40 .
以上实施例中的阵列基板100可以使用非晶硅(a-Si)、氧化物(IndiumGalliumZincOxide,IGZO)或者低温多晶硅(LowTemperaturePoly-Silicon,LTPS)制作薄膜晶体管开关(TFT开关)。当使用低温多晶硅(LTPS)制作TFT开关时,像素单元111的结构如图16所示,像素单元111包括遮光层17,栅极15,扫描线30,栅极线10。图17是沿图16中II’线和JJ’线的剖视图,阵列基板100还包括遮光层17,栅极15,源极12,漏极11,因为其他膜层或者结构与本发明点无直接关系,因此未示出。遮光层17的材质例如为钼铝合金、铬金属、钼金属或是其他同时具有遮光功能与导电性质的材质,所述扫描线30可以与所述遮光层17同层设置,使用同一金属层利用同一掩膜刻蚀形成。所述扫描线30与所述栅极线10中的一条通过过孔40连接。The array substrate 100 in the above embodiments can use amorphous silicon (a-Si), oxide (IndiumGalliumZincOxide, IGZO) or low temperature polysilicon (LowTemperaturePoly-Silicon, LTPS) to make thin film transistor switches (TFT switches). When low temperature polysilicon (LTPS) is used to make the TFT switch, the structure of the pixel unit 111 is shown in FIG. Fig. 17 is a cross-sectional view along line II' and line JJ' in Fig. 16, the array substrate 100 also includes a light-shielding layer 17, a gate 15, a source 12, and a drain 11, because other film layers or structures are not directly related to the present invention. relationship and is therefore not shown. The material of the light-shielding layer 17 is, for example, molybdenum-aluminum alloy, chromium metal, molybdenum metal, or other materials with both light-shielding function and conductive properties. Formed by etching with the same mask. The scan line 30 is connected to one of the gate lines 10 through a via hole 40 .
本发明还提供一种包括上述阵列基板100的显示装置。显示装置可以包括:液晶面板、液晶电视、手机、电脑等。The present invention also provides a display device comprising the above-mentioned array substrate 100 . The display device may include: a liquid crystal panel, a liquid crystal TV, a mobile phone, a computer, and the like.
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be assumed that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deduction or replacement can be made, which should be regarded as belonging to the protection scope of the present invention.
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