CN105336880B - A kind of method that rubrene film is prepared based on double-deck inductive technology - Google Patents
A kind of method that rubrene film is prepared based on double-deck inductive technology Download PDFInfo
- Publication number
- CN105336880B CN105336880B CN201510691763.XA CN201510691763A CN105336880B CN 105336880 B CN105336880 B CN 105336880B CN 201510691763 A CN201510691763 A CN 201510691763A CN 105336880 B CN105336880 B CN 105336880B
- Authority
- CN
- China
- Prior art keywords
- layer
- rubrene
- film
- double
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 12
- 238000005516 engineering process Methods 0.000 title claims description 10
- 230000001939 inductive effect Effects 0.000 title claims description 8
- 238000002360 preparation method Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000007738 vacuum evaporation Methods 0.000 claims description 6
- 230000005693 optoelectronics Effects 0.000 claims description 2
- 230000006698 induction Effects 0.000 abstract description 14
- 239000010408 film Substances 0.000 description 18
- 239000010409 thin film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明设计了一种双层诱导红荧烯薄膜生长的制备方法，即通过增加有效诱导层的层数来诱导红荧烯薄膜生长，在高质量双层诱导层上外延生长高有序、高结晶性的红荧烯薄膜，通过调控外延层生长行为、结晶度和薄膜微结构，实现有机——有机外延生长关系，构筑高有序、高结晶性的多晶形态的红荧烯薄膜，达到提高其迁移率的目的。The present invention designs a preparation method for double-layer induced rubrene film growth, that is, the growth of rubrene film is induced by increasing the number of effective induction layers, and the epitaxial growth is highly ordered and high-quality on the high-quality double-layer induction layer. The crystalline rubrene film realizes the organic-organic epitaxial growth relationship by controlling the epitaxial layer growth behavior, crystallinity and film microstructure, and constructs a highly ordered and highly crystalline polycrystalline rubrene film to achieve to increase its mobility.
Description
技术领域technical field
本发明涉及红荧烯薄膜生长制备技术，属于有机光电子技术领域。The invention relates to the technology for growing and preparing rubrene thin films, and belongs to the technical field of organic optoelectronics.
背景技术Background technique
红荧烯(Rubrene，CH，5.6.11.12-四苯基四苯)作为一种高迁移率的有机半导体材料，近年来得到人们广泛关注。在目前相关报道中其单晶迁移率高达15-40cm2/Vs，是目前发现的有机半导体中载流子迁移率最高的材料。而且红荧烯具有低的升华温度，在可见光区域具有窄的吸收光谱和很低的吸收系数，因此，在基于有机半导体材料的器件研究中，红荧烯被认为是最有潜力的一种半导体材料。但是，相关研究发现，要制备高质量的大面积的红荧烯薄膜是非常难的。As a high-mobility organic semiconductor material, rubrene (Rubrene, CH, 5.6.11.12-tetraphenyltetraphenyl) has attracted extensive attention in recent years. According to current related reports, its single crystal mobility is as high as 15-40 cm 2 /Vs, which is the material with the highest carrier mobility among organic semiconductors discovered so far. Moreover, rubrene has a low sublimation temperature, a narrow absorption spectrum and a very low absorption coefficient in the visible region. Therefore, in the research of devices based on organic semiconductor materials, rubrene is considered to be the most potential semiconductor. Material. However, related studies have found that it is very difficult to prepare high-quality large-area rubrene films.
目前，主要的薄膜制备工艺主要有分子外延生长技术、真空蒸镀、溶液技术、软印刷技术、物理气相沉积技术。而真空蒸镀的优点在于工艺简单，制备薄膜质量较均匀，多层薄膜制备相对比较容易，而且成膜速率、效率较高。同时，弱取向外延生长则是利用诱导层材料和在诱导层上生长的材料两者晶格之间存在的外延关系，获得高质量、大尺寸连续的结晶性薄膜。利用该方法生长的有机半导体薄膜在较大面积内均具有取向性，提高了薄膜的有序度，使载流子的传输更趋于规整化。At present, the main thin film preparation technologies mainly include molecular epitaxy growth technology, vacuum evaporation, solution technology, soft printing technology, and physical vapor deposition technology. The advantages of vacuum evaporation are that the process is simple, the quality of the prepared film is relatively uniform, the preparation of multilayer films is relatively easy, and the film forming rate and efficiency are high. At the same time, weakly oriented epitaxial growth is to use the epitaxial relationship between the crystal lattice of the induced layer material and the material grown on the induced layer to obtain a high-quality, large-size continuous crystalline film. The organic semiconductor thin film grown by this method has orientation in a large area, which improves the order degree of the thin film and makes the transport of carriers tend to be more regular.
因此，结合真空蒸镀和弱取向外延生长，本发明设计了一种双层诱导红荧烯薄膜生长的制备方法，即通过增加有效诱导层的层数来诱导红荧烯薄膜生长，在高质量双层诱导层上外延生长高有序、高结晶性的红荧烯薄膜，通过调控外延层生长行为、结晶度和薄膜微结构，实现有机——有机外延生长关系，构筑高有序、高结晶性的多晶形态的红荧烯薄膜。双层诱导可以实现低温、柔性条件下在α-4噻吩(α-4T)和红荧烯之间建立外延关系，同时改变薄膜排列结构，使外延薄膜实现高有序、高平整度和有序性，从非晶态向多晶态过渡，诱导层形成多晶薄膜，达到提高其迁移率的目的。Therefore, in combination with vacuum evaporation and weakly oriented epitaxial growth, the present invention designs a preparation method for double-layer induced rubrene film growth, that is, by increasing the number of effective induction layers to induce rubrene film growth, in high quality Epitaxial growth of highly ordered and highly crystalline rubrene films on the double-layer induction layer, by adjusting the epitaxial layer growth behavior, crystallinity and film microstructure, realizes the organic-organic epitaxial growth relationship, and builds high order and high crystallinity Polymorphic rubrene thin films. Double-layer induction can realize the establishment of epitaxial relationship between α-4thiophene (α-4T) and rubrene under low temperature and flexible conditions, and at the same time change the film arrangement structure, so that the epitaxial film can achieve high order, high flatness and order Transition from an amorphous state to a polycrystalline state, the induced layer forms a polycrystalline film, and achieves the purpose of improving its mobility.
发明内容Contents of the invention
本发明是一种基于双层诱导技术制备红荧烯薄膜的方法，目的是为了克服红荧烯薄膜制备中出现的薄膜质量差、工艺复杂等问题。本发明采用真空蒸镀的方法，利用弱取向外延生长，通过双层诱导技术制备红荧烯薄膜。The invention is a method for preparing a rubrene film based on a double-layer induction technology, and aims to overcome the problems of poor film quality and complicated process in the preparation of the rubrene film. The invention adopts a vacuum evaporation method, utilizes weak orientation epitaxial growth, and prepares a rubrene thin film through a double-layer induction technique.
本发明是一种基于双层诱导技术制备红荧烯薄膜的方法。本发明是这样实现的，如图1所示，Si基底(1)，SiO2绝缘层(2)，六联苯(p-6P)第一诱导层(3)，α-4噻吩(α-4T)第二诱导层(4)，红荧烯有源层(5)，其中衬底包括Si基底(1)，SiO2绝缘层(2)。六联苯(p-6P)第一诱导层(3)，α-4噻吩(α-4T)第二诱导层(4)，红荧烯有源层(5)之间存在弱取向外延关系。所采用的设备为七工位OEL/EL光电薄膜联合制备系统。The invention is a method for preparing rubrene film based on double-layer induction technology. The present invention is achieved like this, as shown in Figure 1, Si substrate (1), SiO 2 insulating layer (2), hexabiphenyl (p-6P) first induction layer (3), α-4 thiophene (α- 4T) The second induction layer (4), the rubrene active layer (5), wherein the substrate includes a Si substrate (1), and the SiO 2 insulating layer (2). There is a weak orientation epitaxial relationship among the first induced layer of hexabiphenyl (p-6P), the second induced layer of α-4thiophene (α-4T) (4), and the active layer of rubrene (5). The equipment used is a seven-station OEL/EL photoelectric film joint preparation system.
附图说明Description of drawings
图1为基于双层诱导技术制备的红荧烯薄膜结构示意图。Figure 1 is a schematic diagram of the structure of a rubrene film prepared based on the double-layer induction technique.
具体实施方式detailed description
如图1所示，Si基底(1)，SiO2绝缘层(2)，p型六联苯(p-6P)第一诱导层(3)，α-4噻吩(α-4T)第二诱导层(4)，红荧烯有源层(5)。其中，绝缘层厚度为300nm的SiO2(2)。As shown in Figure 1, Si substrate (1), SiO 2 insulating layer (2), p-type hexabiphenyl (p-6P) first induction layer (3), α-4thiophene (α-4T) second induction layer Layer (4), rubrene active layer (5). Wherein, the thickness of the insulating layer is SiO 2 (2) of 300nm.
具体实现过程：衬底由基底Si(1)和其表面附有一层300nm厚的SiO2(2)组成；将衬底清洗干净后放入七工位OEL/EL光电薄膜联合制备系统的反应室中；反应室真空度抽至小于6.0×10-4Pa；在衬底上真空蒸镀第一层诱导层p-6P(3)，衬底温度为180℃，厚度约为3nm；在第一诱导层上真空蒸镀第二诱导层α-4T(4)，衬底温度为20℃，厚度为30nm；在第二层诱导层上真空蒸镀一层半导体层红荧烯(5)，衬底温度为20℃，厚度在30nm。The specific implementation process: the substrate is composed of the substrate Si (1) and a layer of SiO 2 (2) with a thickness of 300nm on the surface; the substrate is cleaned and placed in the reaction chamber of the seven-station OEL/EL photoelectric thin film joint preparation system middle; the vacuum degree of the reaction chamber was evacuated to less than 6.0×10 -4 Pa; the first layer of induction layer p-6P(3) was vacuum evaporated on the substrate, the substrate temperature was 180°C, and the thickness was about 3nm; The second inductive layer α-4T (4) was vacuum evaporated on the inductive layer, the substrate temperature was 20°C, and the thickness was 30nm; a semiconducting layer rubrene (5) was vacuum evaporated on the second inductive layer, and the lining The bottom temperature is 20°C and the thickness is 30nm.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510691763.XA CN105336880B (en) | 2015-10-23 | 2015-10-23 | A kind of method that rubrene film is prepared based on double-deck inductive technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510691763.XA CN105336880B (en) | 2015-10-23 | 2015-10-23 | A kind of method that rubrene film is prepared based on double-deck inductive technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105336880A CN105336880A (en) | 2016-02-17 |
| CN105336880B true CN105336880B (en) | 2017-09-12 |
Family
ID=55287282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510691763.XA Active CN105336880B (en) | 2015-10-23 | 2015-10-23 | A kind of method that rubrene film is prepared based on double-deck inductive technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105336880B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025101B (en) * | 2016-07-23 | 2017-08-08 | 长春工业大学 | A kind of method of the spherical rubrene crystal film of polymer inducing layer cosolvent regulation and control growth |
| CN107083530B (en) * | 2017-04-11 | 2019-02-05 | 长春工业大学 | A kind of method of graphene quantum dot chemical activity induced growth rubrene thin film |
| CN108461640B (en) * | 2018-03-16 | 2020-01-31 | 中国科学院长春应用化学研究所 | Crystalline organic electroluminescent diode and its application |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102154688A (en) * | 2011-03-25 | 2011-08-17 | 长春圣卓龙电子材料有限公司 | Rubrene weak epitaxial growth thin film and application thereof in organic thin-film transistor |
| CN102560632A (en) * | 2010-12-21 | 2012-07-11 | 上海中科联和显示技术有限公司 | Solid solution inducing layer for weak epitaxial growth of non-planar phthalocyanin thin film |
| CN104316571A (en) * | 2014-11-10 | 2015-01-28 | 长春工业大学 | Preparation method of carbon nanotube-heterojunction organic gas sensor |
-
2015
- 2015-10-23 CN CN201510691763.XA patent/CN105336880B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560632A (en) * | 2010-12-21 | 2012-07-11 | 上海中科联和显示技术有限公司 | Solid solution inducing layer for weak epitaxial growth of non-planar phthalocyanin thin film |
| CN102154688A (en) * | 2011-03-25 | 2011-08-17 | 长春圣卓龙电子材料有限公司 | Rubrene weak epitaxial growth thin film and application thereof in organic thin-film transistor |
| CN104316571A (en) * | 2014-11-10 | 2015-01-28 | 长春工业大学 | Preparation method of carbon nanotube-heterojunction organic gas sensor |
Non-Patent Citations (2)
| Title |
|---|
| 红荧烯多晶薄膜制备及晶体管性质;钱先锐;《中国博士学位论文全文数据库》;20141106;摘要 * |
| 高有序有机半导体薄膜的弱外延生长;黄丽珍;《中国博士学位论文全文数据库》;20111231;摘要 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105336880A (en) | 2016-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2011313917B2 (en) | Ordered organic-organic multilayer growth | |
| CN102618930B (en) | A kind of preparation method of AlN crystal | |
| Chang et al. | High performance of rubrene thin film transistor by weak epitaxy growth method | |
| JP2011155249A5 (en) | Method for manufacturing semiconductor device | |
| JP2011135051A5 (en) | ||
| CN105336880B (en) | A kind of method that rubrene film is prepared based on double-deck inductive technology | |
| CN105118851A (en) | Sapphire substrate-based multilayer gallium oxide thin film and growing method thereof | |
| CN113278948A (en) | Tin sulfide/tin disulfide heterojunction material and preparation method thereof | |
| Chen et al. | Intrinsic charge carrier mobility in single-crystal OFET by “fast trapping vs. slow detrapping” model | |
| JP2008110907A (en) | Method for producing silicon carbide single crystal ingot and silicon carbide single crystal ingot | |
| CN103227194A (en) | Large-size graphene stack structure wafer and preparation method thereof | |
| CN104485406A (en) | Method for preparing sapphire pattern substrate | |
| CN103779424B (en) | A kind of amorphous state gallium nitride or indium nitride film transistor and preparation method thereof | |
| CN103236400B (en) | Production method of low-temperature polysilicon thin film and production method of thin-film transistor | |
| CN103741220A (en) | Method for growing high-quality gallium nitride (GaN) crystals by using graphene or graphene oxide | |
| Huang et al. | Heteroepitaxy growth high performance films of perylene diimide derivatives | |
| CN105385993B (en) | A kind of method prepared by orderly patterned growth of rubrene thin-film self-assembling | |
| CN103811354B (en) | A kind of method improving epitaxially deposited layer crystal mass | |
| CN103346072A (en) | Method for manufacturing polycrystalline silicon thin film | |
| Li et al. | Micrometer‐and Nanometer‐Sized, Single‐Crystalline Ribbons of a Cyclic Triphenylamine Dimer and Their Application in Organic Transistors | |
| CN106549020B (en) | TFT structure based on flexible multilayer graphene quantum carbon-based plate material and manufacturing method | |
| TWI685993B (en) | Thin film semiconductor and organic semiconductor solution comprising a small-molecular semiconducting compound and a non-conductive polymer, and use of the solution | |
| CN105225928B (en) | A kind of preparation method of zinc oxide monocrystalline film | |
| CN104332540B (en) | A kind of method for preparing high luminescence energy p-type ZnO film | |
| CN107275209A (en) | A kind of preparation method of SiC super-pressure PiN diode component materials |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Lijuan Inventor after: Yan Chuang Inventor after: Zhang Yuting Inventor after: Sun Lijing Inventor after: Wang Yong Inventor after: Li Zhanguo Inventor before: Wang Lijuan Inventor before: Zhang Yuting Inventor before: Sun Lijing Inventor before: Wang Yong Inventor before: Li Zhanguo |
|
| CB03 | Change of inventor or designer information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |