CN105305225B - A kind of semiconductor laser cooling heat sink device - Google Patents
A kind of semiconductor laser cooling heat sink device Download PDFInfo
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- CN105305225B CN105305225B CN201510744505.3A CN201510744505A CN105305225B CN 105305225 B CN105305225 B CN 105305225B CN 201510744505 A CN201510744505 A CN 201510744505A CN 105305225 B CN105305225 B CN 105305225B
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Abstract
本发明涉及半导体激光列阵技术领域,公开了一种半导体激光器冷却热沉装置,包括:依序设置的进水侧盖、进水层、导引层、回水层以及回水侧盖;其中,进水侧盖的外表面设置有进水孔,回水侧盖的外表面设置有出水孔;在进水侧盖、进水层以及导引层之间形成有减缓导热介质流速的缓流区;导引层中靠近半导体激光器的一侧设置有供导热介质从缓流区流入回水层的若干个通孔;在导引层、回水层以及回水侧盖之间还形成有供导热介质流出的出水通道。本发明提供的半导体激光器冷却热沉装置是3D打印一体成型的装置,避免了现有技术中由于各层焊接引入的热应力及热阻,也避免了装置内壁镀金材料脱落导致热沉堵塞,提高换热效率。
The invention relates to the technical field of semiconductor laser arrays, and discloses a semiconductor laser cooling heat sink device, comprising: a water inlet side cover, a water inlet layer, a guide layer, a water return layer and a water return side cover arranged in sequence; , the outer surface of the water inlet side cover is provided with a water inlet hole, and the outer surface of the return water side cover is provided with a water outlet hole; between the water inlet side cover, the water inlet layer and the guide layer, there is a slow flow that slows down the flow rate of the heat transfer medium area; the side of the guide layer close to the semiconductor laser is provided with several through holes for the heat-conducting medium to flow into the backwater layer from the slow flow area; The outlet channel through which the heat transfer medium flows out. The semiconductor laser cooling heat sink device provided by the present invention is a 3D printing integrated device, which avoids the thermal stress and thermal resistance introduced by the welding of each layer in the prior art, and also avoids the heat sink being blocked by the gold-plated material on the inner wall of the device. heat transfer efficiency.
Description
技术领域technical field
本发明涉及半导体激光列阵技术领域,尤其涉及一种半导体激光器冷却热沉装置。The invention relates to the technical field of semiconductor laser arrays, in particular to a semiconductor laser cooling heat sink device.
背景技术Background technique
半导体激光器具有电光转换效率高、体积小重量轻、寿命长等特点,使得它具有广泛的应用,提高输出功率和光束质量一直是大功率半导体激光器的主要研究课题。随着半导体激光器功率的不断提高,功率密度不断地增大,激光器芯片的热量过高直接影响半导体激光器的寿命。针对上述问题,一般采用微通道冷却热沉来降低激光器芯片的热量。Semiconductor lasers have the characteristics of high electro-optical conversion efficiency, small size, light weight, and long life, which make them widely used. Improving output power and beam quality has always been the main research topic of high-power semiconductor lasers. As the power of semiconductor lasers continues to increase, the power density continues to increase, and the high heat of the laser chip directly affects the life of the semiconductor laser. In view of the above problems, a microchannel cooling heat sink is generally used to reduce the heat of the laser chip.
现有技术的单片式微通道冷却热沉由五层形态各异的无氧铜薄片组合而成,激光芯片位于进水侧盖层的上表面。导热介质从入水口进入微通道层的微通道区,经过导水层的狭缝再次进入微通道区,再由出水口进入回水侧盖层,对芯片完成一次循环制冷。The monolithic microchannel cooling heat sink in the prior art is composed of five layers of oxygen-free copper sheets with different shapes, and the laser chip is located on the upper surface of the water inlet side cover layer. The heat-conducting medium enters the micro-channel area of the micro-channel layer from the water inlet, enters the micro-channel area again through the slit of the water-conducting layer, and then enters the backwater side cover layer from the water outlet to complete a cycle of cooling for the chip.
然而现有的冷却热沉中,导热介质从入水口进入之后直接流入微通道区对芯片进行冷却,无法在微通道内充分均匀循环地,导致局部散热效果不好,容易将激光器芯片烧坏,换热效率低。此外,五片无氧铜薄片是不是一体成型的,而是相互焊接连接。在焊接处容易产生额外的热阻和热应力。且无氧铜材料的表现需要镀金,长期使用后表面金层容易脱落导致热沉堵塞。However, in the existing cooling heat sink, the heat conduction medium directly flows into the microchannel area to cool the chip after entering the water inlet, and cannot circulate fully and uniformly in the microchannel, resulting in poor local heat dissipation effect, and easily burns out the laser chip. The heat exchange efficiency is low. In addition, the five oxygen-free copper sheets are not integrally formed, but welded to each other. It is easy to generate additional thermal resistance and thermal stress at the soldering place. And the performance of the oxygen-free copper material needs to be plated with gold. After long-term use, the gold layer on the surface is easy to fall off and cause the heat sink to be blocked.
发明内容Contents of the invention
本发明要解决的技术问题是:如何提高半导体激光器冷却热沉装置换热效率。The technical problem to be solved by the invention is: how to improve the heat exchange efficiency of the semiconductor laser cooling heat sink device.
为实现上述的发明目的,本发明提供了一种半导体激光器冷却热沉装置,包括:依序设置的进水侧盖、进水层、导引层、回水层以及回水侧盖;In order to achieve the above-mentioned purpose of the invention, the present invention provides a semiconductor laser cooling heat sink device, including: a water inlet side cover, a water inlet layer, a guide layer, a water return layer and a water return side cover arranged in sequence;
其中,in,
所述进水侧盖的外表面设置有进水孔,所述回水侧盖的外表面设置有出水孔;所述出水孔位于所述进水孔远离所述半导体激光器耙条的一侧;The outer surface of the water inlet side cover is provided with a water inlet, and the outer surface of the return water side cover is provided with a water outlet; the water outlet is located on the side of the water inlet away from the rake of the semiconductor laser;
在所述进水侧盖、进水层以及导引层之间形成有减缓导热介质流速的缓流区;A slow flow zone is formed between the water inlet side cover, the water inlet layer and the guide layer to slow down the flow velocity of the heat transfer medium;
所述导引层中靠近所述半导体激光器的一侧设置有供导热介质从所述缓流区流入所述回水层的若干个通孔;The side of the guide layer close to the semiconductor laser is provided with several through holes for the heat conduction medium to flow into the backwater layer from the slow flow area;
在所述导引层、回水层以及回水侧盖之间还形成有供导热介质流出的出水通道;A water outlet channel for the heat transfer medium to flow out is also formed between the guide layer, the return water layer and the return water side cover;
所述进水孔连通所述缓流区,所述缓流区通过所述若干个通孔连通所述出水通道,所述出水通道与所述出水孔连通;The water inlet hole communicates with the slow flow area, and the slow flow area communicates with the water outlet channel through the several through holes, and the water outlet channel communicates with the water outlet hole;
导热介质从所述进水孔进入,在所述进水层的缓流区中缓流,通过所述导引层的通孔流入所述回水层,再经过所述回水层的出水通道从所述出水孔流出。The heat conduction medium enters from the water inlet hole, flows slowly in the slow flow area of the water inlet layer, flows into the backwater layer through the through hole of the guide layer, and then passes through the water outlet channel of the backwater layer Flow out from the outlet hole.
其中较优地,所述缓流区是由:Wherein preferably, described slow flow area is made of:
所述进水层上的镂空区域形成的;或,formed by hollowed-out areas on the water-intake layer; or,
所述导引层靠近所述进水层的表面上的凹陷与所述进水层上的镂空区域结合形成的。The depression on the surface of the guide layer close to the water inlet layer is combined with the hollow area on the water inlet layer.
其中较优地,所述出水通道是由:Wherein preferably, described outlet channel is made of:
所述回水层上的镂空区域形成的;Formed by the hollow area on the backwater layer;
所述回水侧盖内表面上的凹陷与所述回水层上的镂空区域结合形成的。The depression on the inner surface of the backwater side cover is combined with the hollow area on the backwater layer.
其中较优地,所述回水层还设置有用于为半导体激光器均匀散热的若干个微通道,所述通孔与所述若干个微通道对应连通,所述若干个微通道与所述出水通道连通;Preferably, the backwater layer is also provided with several micro-channels for evenly dissipating heat from the semiconductor laser, the through holes communicate with the several micro-channels correspondingly, and the several micro-channels are connected with the water outlet channel. connected;
导热介质进入到所述缓流区后,通过所述通孔流入对应的所述微通道中从而对半导体激光器进行散热,再经过所述出水通道从所述出水孔流出。After entering the slow flow area, the heat conduction medium flows into the corresponding microchannel through the through hole to dissipate heat from the semiconductor laser, and then flows out from the water outlet hole through the water outlet channel.
其中较优地,所述若干个微通道是由若干个等间距的分隔脊分隔而成,且所述若干个微通道向靠近所述出水孔方向延伸的长度相同,所述若干个微通道的宽度相同。Wherein preferably, described several microchannels are separated by several equidistant dividing ridges, and the lengths that described several microchannels extend toward the direction close to described outlet holes are identical, and the lengths of described several microchannels Same width.
其中较优地,所述回水层还包括与所述微通道相连的汇流区,所述汇流区还与所述出水通道相连;Preferably, the backwater layer further includes a confluence area connected to the microchannel, and the confluence area is also connected to the water outlet channel;
在所述汇流区内远离所述微通道的一端,还设有供导热介质向所述出水通道汇流的斜坡。At the end of the confluence area away from the microchannel, there is also a slope for the heat transfer medium to confluence to the water outlet channel.
其中较优地,所述出水通道包括主出水通道以及分流通道;Wherein preferably, the water outlet channel includes a main water outlet channel and a distribution channel;
所述分流通道设置在所述主出水通道靠近所述出水孔的延伸方向,且所述主出水通道与所述分流通道均与所述出水孔相连;The distribution channel is arranged in the extension direction of the main water outlet channel close to the water outlet hole, and the main water outlet channel and the distribution channel are both connected to the water outlet hole;
所述出水通道连通所述进水层、导引层以及回水层。The water outlet channel communicates with the water inlet layer, the guide layer and the water return layer.
其中较优地,Among them preferably,
所述主出水通道以及分流通道,在所述进水层以及导引层中是通过分隔条相互隔开的;The main water outlet channel and the distribution channel are separated from each other by partition bars in the water inlet layer and the guide layer;
所述主出水通道以及分流通道,在所述回水层中连通的,所述主出水通道以及分流通道之间还设置有厚度小于所述回水层厚度的分流脊。The main water outlet channel and the distribution channel are connected in the backwater layer, and a distribution ridge with a thickness smaller than that of the backwater layer is arranged between the main water outlet channel and the distribution channel.
其中较优地,所述半导体激光器冷却热沉装置是一体成型的。Wherein preferably, the semiconductor laser cooling heat sink device is integrally formed.
其中较优地,所述半导体激光器冷却热沉装置是通过3D打印一体成型的。Preferably, the semiconductor laser cooling heat sink device is integrally formed by 3D printing.
本发明提供了一种半导体激光器冷却热沉装置。导热介质从进水孔进入该装置后,在进水层的空腔中缓流,通过导引层的通孔流入回水层的微通道中,最终经过回水层的出水通道从出水孔流出,实现了导热介质在装置内的匀速循环流动。此外,本装置通过3D打印技术一体成型制备,避免了现有技术中各层之间由于焊接所引入的额外的热应力及热阻,提高了装置整体的散热能力。且采用镍基合金粉或钨铜合金粉作为材料进行3D打印,可以很好的实现热沉与耙条芯片的热膨胀系数相匹配,且装置内壁不需要镀金,也避免了现有技术中由于长期使用无氧铜表面金层脱落而导致热沉堵塞的问题,提高换热效率。The invention provides a semiconductor laser cooling heat sink device. After the heat conduction medium enters the device from the water inlet hole, it flows slowly in the cavity of the water inlet layer, flows into the microchannel of the return water layer through the through hole of the guide layer, and finally flows out of the water outlet hole through the water outlet channel of the return water layer , to realize the uniform circulation flow of the heat transfer medium in the device. In addition, the device is integrally formed by 3D printing technology, which avoids the additional thermal stress and thermal resistance introduced by welding between layers in the prior art, and improves the overall heat dissipation capacity of the device. Moreover, nickel-based alloy powder or tungsten-copper alloy powder is used as material for 3D printing, which can well match the thermal expansion coefficient of the heat sink and the rake chip, and the inner wall of the device does not need to be plated with gold, which also avoids the long-term problems in the prior art. Use the problem that the gold layer on the surface of oxygen-free copper falls off to cause the blockage of the heat sink, and improve the heat exchange efficiency.
附图说明Description of drawings
通过阅读下文优选实施方式的详细描述,各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的,而并不认为是对本发明的限制。而且在整个附图中,用相同的参考符号表示相同的部件。在附图中:Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiment. The drawings are only for the purpose of illustrating a preferred embodiment and are not to be considered as limiting the invention. Also throughout the drawings, the same reference numerals are used to designate the same components. In the attached picture:
图1是本发明第一实施例提供的冷却热沉装置整体结构示意图;Fig. 1 is a schematic diagram of the overall structure of the cooling heat sink device provided by the first embodiment of the present invention;
图2是本发明第一实施例提供的冷却热沉装置侧视纵向剖面示意图;Fig. 2 is a side view longitudinal sectional view of the cooling heat sink device provided by the first embodiment of the present invention;
图3是本发明第一实施例提供的进水侧盖立体结构示意图;Fig. 3 is a schematic diagram of the three-dimensional structure of the water inlet side cover provided by the first embodiment of the present invention;
图4是本发明第一实施例提供的回水侧盖立体结构示意图;Fig. 4 is a schematic diagram of the three-dimensional structure of the return water side cover provided by the first embodiment of the present invention;
图5是本发明第一实施例提供的进水层立体结构示意图;Fig. 5 is a schematic diagram of the three-dimensional structure of the water inlet layer provided by the first embodiment of the present invention;
图6是本发明第一实施例提供的一种缓流区结构示意图;Fig. 6 is a schematic diagram of the structure of a slow flow area provided by the first embodiment of the present invention;
图7是本发明第一实施例提供的导引层立体结构示意图;Fig. 7 is a schematic diagram of the three-dimensional structure of the guiding layer provided by the first embodiment of the present invention;
图8是本发明第一实施例提供的回水层立体结构示意图;Fig. 8 is a schematic diagram of the three-dimensional structure of the backwater layer provided by the first embodiment of the present invention;
图9是本发明第一实施例提供的一种出水通道结构示意图。Fig. 9 is a schematic structural diagram of a water outlet channel provided by the first embodiment of the present invention.
具体实施方式Detailed ways
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.
如图1-7所示,本发明提供了一种半导体激光器冷却热沉装置。该装置包括:依序设置的进水侧盖19、进水层12、导引层13、回水层14以及回水侧盖20;其中,进水侧盖19的外表面设置有进水孔1,回水侧盖20的外表面设置有出水孔3;出水孔3位于进水孔1远离半导体激光器的一侧;在进水侧盖19、进水层12以及导引层13之间形成有减缓导热介质流速的缓流区4;导引层13中靠近半导体激光器的一侧设置有供导热介质从缓流区4流入回水层的若干个通孔5;在导引层13、回水层14以及回水侧盖20之间还形成有供导热介质流出的出水通道;进水孔1连通缓流区4,缓流区4通过若干个通孔5连通出水通道,出水通道与出水孔3连通;导热介质从进水孔1进入,在进水层12的缓流区4中缓流,通过导引层13的通孔5流入回水层14,再经过回水层14的出水通道从出水孔3流出。本发明提供的半导体激光器冷却热沉装置是通过3D打印技术一体成型的。下面将对本发明提供的半导体激光器冷却热沉装置展开详细说明。As shown in Figures 1-7, the present invention provides a semiconductor laser cooling heat sink device. The device includes: a water inlet side cover 19, a water inlet layer 12, a guide layer 13, a water return layer 14 and a water return side cover 20 arranged in sequence; wherein, the outer surface of the water inlet side cover 19 is provided with a water inlet hole 1. The outer surface of the water return side cover 20 is provided with a water outlet hole 3; the water outlet hole 3 is located on the side of the water inlet hole 1 away from the semiconductor laser; it is formed between the water inlet side cover 19, the water inlet layer 12 and the guide layer 13 There is a slow-flow area 4 that slows down the flow velocity of the heat-conducting medium; the side of the guide layer 13 close to the semiconductor laser is provided with several through holes 5 for the heat-conducting medium to flow into the return layer from the slow-flow area 4; in the guide layer 13, the return A water outlet channel is also formed between the water layer 14 and the backwater side cover 20 for the heat transfer medium to flow out; the water inlet hole 1 is connected to the slow flow area 4, and the slow flow area 4 is connected to the water outlet channel through several through holes 5, and the water outlet channel and the water outlet The hole 3 is connected; the heat conduction medium enters from the water inlet hole 1, flows slowly in the slow flow area 4 of the water inlet layer 12, flows into the backwater layer 14 through the through hole 5 of the guide layer 13, and then passes through the water outlet of the backwater layer 14 The channel flows out from the outlet hole 3. The semiconductor laser cooling heat sink device provided by the present invention is integrally formed by 3D printing technology. The semiconductor laser cooling heat sink device provided by the present invention will be described in detail below.
实施例一Embodiment one
本实施例提供了一种半导体激光器冷却热沉装置。其中,如图1、2所示,该装置还包括定位孔2以及螺丝孔15。定位孔2设置在进水孔1以及出水孔2之间。进水孔1、定位孔2以及出水孔3均连通进水侧盖19、进水层12、导引层13、回水层14以及回水侧盖20。螺丝孔15优选的设置在装置出水孔一侧的两个角上,同样地连通进水侧盖19、进水层12、导引层13、回水层14以及回水侧盖20。定位孔2以及螺丝孔15均用于固定整个热沉装置。如图4、图5所示,装置的进水侧盖19以及回水侧盖20的结构基本相同,唯一不同的地方是进水侧盖19上的进水孔1以及出水孔3的半径大于回水侧盖20上进水孔1以及出水孔3的半径。This embodiment provides a semiconductor laser cooling heat sink device. Wherein, as shown in FIGS. 1 and 2 , the device also includes positioning holes 2 and screw holes 15 . The positioning hole 2 is arranged between the water inlet hole 1 and the water outlet hole 2 . The water inlet hole 1 , the positioning hole 2 and the water outlet hole 3 are all connected to the water inlet side cover 19 , the water inlet layer 12 , the guiding layer 13 , the water return layer 14 and the water return side cover 20 . The screw holes 15 are preferably arranged on two corners on one side of the water outlet hole of the device, and are also connected to the water inlet side cover 19, the water inlet layer 12, the guide layer 13, the return water layer 14 and the return water side cover 20. Both the positioning holes 2 and the screw holes 15 are used to fix the entire heat sink device. As shown in Figure 4 and Figure 5, the structures of the water inlet side cover 19 and the return water side cover 20 of the device are basically the same, the only difference is that the radius of the water inlet hole 1 and the water outlet hole 3 on the water inlet side cover 19 is larger than Radius of the water inlet hole 1 and the water outlet hole 3 on the return water side cover 20 .
图5示出了进水层12的立体结构示意图。其中,在进水侧盖19、进水层12以及导引层13之间形成有与进水孔1相连通的缓流区4,用于对从进水孔1进入的导热介质进水缓流。缓流区4为一敞开空间。其中较优地,如图5所示,缓流区4是由进水层12上的镂空区域形成的;或如图6所示,是由导引层13靠近进水层12的表面上的凹陷21与进水层12上的镂空区域22结合形成的(其中,箭头的方向为导热介质流动的方向)。其开口尺寸由出水孔1至进水层12的边缘逐渐增大,并适应进水层12内壁的形状。FIG. 5 shows a schematic perspective view of the three-dimensional structure of the water inlet layer 12 . Wherein, between the water inlet side cover 19, the water inlet layer 12 and the guide layer 13, a slow flow zone 4 communicating with the water inlet hole 1 is formed, which is used to slow down the water inlet of the heat transfer medium entering from the water inlet hole 1. flow. The slow flow zone 4 is an open space. Wherein preferably, as shown in Figure 5, the slow flow area 4 is formed by the hollow area on the water inlet layer 12; The depression 21 is formed in combination with the hollow area 22 on the water inlet layer 12 (wherein, the direction of the arrow is the direction in which the heat-conducting medium flows). The opening size gradually increases from the water outlet hole 1 to the edge of the water inlet layer 12 and adapts to the shape of the inner wall of the water inlet layer 12 .
图7示出了导引层13的立体结构示意图。其中,在导引层13内设置有与进水层12的缓流区4相连通的若干个通孔5,用于将进水层12中的导热介质引流至回水层。若干个通孔5优选地设置在导引层13的边缘。图8示出了回水层14的立体结构示意图。其中,在回水层14内设置有与导引层13中若干个通孔5相对应的若干个微通道6。若干个微通道6由若干个等间隔的分隔脊7分隔而成。每个微通道6以及每个分隔脊7的宽度均为300微米,微通道6向靠近出水孔3方向延伸的长度相同。若干个微通道6以及若干个分隔脊7组成了尺片散热结构,用于对设置在整个装置靠近微通道6一端的半导体激光器进行尺片散热。在回水层14内还设置有与微通道6相连通的用于将导热介质汇流的汇流区8。汇流区8在远离微通道6的一端还设有斜坡,用于进一步将导热介质从微通道6中引出。FIG. 7 shows a schematic perspective view of the three-dimensional structure of the guiding layer 13 . Among them, several through holes 5 communicating with the slow flow area 4 of the water inlet layer 12 are provided in the guide layer 13 for leading the heat transfer medium in the water inlet layer 12 to the return water layer. Several through holes 5 are preferably arranged at the edge of the guiding layer 13 . FIG. 8 shows a schematic perspective view of the three-dimensional structure of the backwater layer 14 . Wherein, several microchannels 6 corresponding to several through holes 5 in the guide layer 13 are arranged in the return water layer 14 . Several microchannels 6 are separated by several equally spaced partition ridges 7 . The width of each microchannel 6 and each dividing ridge 7 is 300 microns, and the microchannels 6 extend to the same length toward the water outlet hole 3 . Several microchannels 6 and several dividing ridges 7 form a chip heat dissipation structure, which is used for the chip heat dissipation of the semiconductor laser arranged at the end of the whole device close to the microchannel 6 . In the backwater layer 14 there is also a confluence area 8 communicating with the microchannel 6 for converging the heat conduction medium. The confluence area 8 is further provided with a slope at the end away from the microchannel 6 , which is used to further lead the heat-conducting medium out of the microchannel 6 .
此外,如图5、7、8所示,在导引层13、回水层14以及回水侧盖20之间还形成供导热介质流出的出水通道,用于将导热介质引流至出水孔3从而排出。其中较优地,如图8所示,出水通道是由回水层14上的镂空区域21形成的;或如图9所示,是由回水侧盖20内表面上的凹陷23与回水层14上的镂空区域24结合形成的(其中,箭头的方向为导热介质流动的方向)。In addition, as shown in Figures 5, 7, and 8, a water outlet channel for the heat transfer medium to flow out is formed between the guide layer 13, the return water layer 14, and the return water side cover 20, for guiding the heat transfer medium to the water outlet hole 3 thereby discharged. Wherein preferably, as shown in Figure 8, the water outlet channel is formed by the hollow area 21 on the backwater layer 14; The hollow area 24 on the layer 14 is formed in combination (wherein, the direction of the arrow is the direction in which the heat-conducting medium flows).
其中,出水通道包括主出水通道9和分流通道10。其中,在进水层12中,主出水通道9与缓流区4相邻但不相通,主出水通道9从与缓流区4相邻的位置一直延伸至出水孔3的两侧;分流通道10设置在主水流通道9在出水孔3的两侧的延伸端,且与主水流通道9通过分隔条16分隔开。主出水通道9和分流通道10均与出水孔3相连通。在导引层13中,主出水通道9和分流通道10设置在与进水层12中的主出水通道9和分流通道10相应的位置;同样地,主水流通道9与分流通道10通过分隔条17相互分隔开。在回水层14中,主出水通道9和分流通道10设置在与导引层13中的主出水通道9和分流通道10相应的位置;主出水通道9的一端与汇流区8通过汇流区8中的斜坡相连通,另一端与分流通道10通过分流脊18相连通;在回水层14中,出水孔3的边缘有一层加厚区,主出水通道9和分流通道10在该加厚区的下方与出水孔3连通。Wherein, the water outlet channel includes a main water outlet channel 9 and a distribution channel 10 . Wherein, in the water inlet layer 12, the main water outlet channel 9 is adjacent to but not connected to the slow flow area 4, and the main water outlet channel 9 extends from the position adjacent to the slow flow area 4 to both sides of the water outlet hole 3; 10 is arranged at the extension ends of the main water flow channel 9 on both sides of the water outlet hole 3 , and is separated from the main water flow channel 9 by a partition bar 16 . Both the main water outlet channel 9 and the distribution channel 10 are in communication with the water outlet hole 3 . In the guide layer 13, the main water outlet channel 9 and the distribution channel 10 are arranged at the positions corresponding to the main water outlet channel 9 and the distribution channel 10 in the water inlet layer 12; 17 separated from each other. In the backwater layer 14, the main water outlet channel 9 and the diversion channel 10 are arranged at corresponding positions with the main water outlet channel 9 and the diversion channel 10 in the guide layer 13; one end of the main water outlet channel 9 and the confluence area 8 pass through the confluence area 8 The slope in the middle is connected, and the other end is connected with the distribution channel 10 through the distribution ridge 18; in the backwater layer 14, there is a layer of thickened area on the edge of the outlet hole 3, and the main outlet channel 9 and the distribution channel 10 are in the thickened area. The bottom is communicated with water outlet hole 3.
导热介质从进水侧盖19的进水孔1进入到进水层12中,在缓流区4中缓流;之后,由导引层13上的若干个通孔5将导热介质从缓流区4引流至回水层14对应的若干个微通道6中;导热介质在微通道6中匀速流动,对半导体激光器进行充分换热;吸收了热量的导热介质沿着若干个微通道6流入汇流区8;汇流区8末端的斜坡将导热介质引流至主出水通道9;由于出水孔3的边缘设有一层加厚区,导致主出水通道9的流向末端出现一个阶梯,大大阻碍了导热介质的流出,因此一部分导热介质通过分流脊18被分流至分流通道10,最终主出水通道9以及分流通道10中的导热介质一同从出水孔3中流出。The heat conduction medium enters the water inlet layer 12 from the water inlet hole 1 of the water inlet side cover 19, and flows slowly in the slow flow area 4; after that, the heat conduction medium is transferred from the slow flow zone 4 by several through holes 5 on the guide layer 13. Area 4 is drained into several microchannels 6 corresponding to the backwater layer 14; the heat conduction medium flows at a constant speed in the microchannels 6 to fully exchange heat for the semiconductor laser; the heat conduction medium that has absorbed heat flows into the confluence along several microchannels 6 Area 8; the slope at the end of the confluence area 8 guides the heat transfer medium to the main water outlet channel 9; since the edge of the water outlet hole 3 is provided with a layer of thickened area, a step appears at the end of the main water outlet channel 9, which greatly hinders the flow of the heat transfer medium. Therefore, a part of the heat transfer medium is diverted to the distribution channel 10 through the distribution ridge 18 , and finally the heat transfer medium in the main water outlet channel 9 and the distribution channel 10 flows out from the water outlet hole 3 together.
实施例二Embodiment two
本实施例提供了一种半导体激光器冷却热沉装置。该热沉装置是一体成型的。其中较优地,是基于3D打印从装置设有激光器耙条的一端至另一端在竖直方向上一体成型的。且为了便于一体成型,如图5所示,在进水层中进水孔1开口处的缓流区4的斜边,与装置靠近激光器耙条一侧边沿的夹角优选地大于45度。本实施例提供的热沉装置的其他特征与实施例一相同,在此不再赘述。This embodiment provides a semiconductor laser cooling heat sink device. The heat sink device is integrally formed. Wherein preferably, based on 3D printing, it is integrally formed in the vertical direction from one end of the device provided with the laser rake to the other end. And in order to facilitate integral molding, as shown in Figure 5, the angle between the hypotenuse of the slow flow area 4 at the opening of the water inlet hole 1 in the water inlet layer and the edge of the device near the laser rake is preferably greater than 45 degrees. Other features of the heat sink device provided in this embodiment are the same as those in Embodiment 1, and will not be repeated here.
本实施例提供的3D打印一体成型冷却热沉装置避免了现有技术中因各层焊接而增加的额外的热应力与热阻。此外,装置的材料为不同配比的镍基合金粉末或钨铜合金粉,具有很好的抗腐蚀性具有很长的寿命,且其热匹配系数要好于无氧铜材料,可以减小因热沉与激光芯片的热膨胀系数不匹配而产生smile效应(大功率半导体激光器列阵在工作时,从激光器到热沉温度梯度很大,由于半导体激光器列阵衬底材料(砷化镓)与热沉材料(无氧铜)线性热膨胀系数不匹配,从而导致热应力的产生热应力引起半导体激光器列阵中各个发光单元在垂直于P-N结方向发生位移。再加上垂直于P-N结方向发光尺寸只有约1微米,所以较小的位移对发光产生较大影响,使列阵中各个发光单元不在一条直线上,从而导致半导体激光器整体发光弯曲,这种现象被称为smile效应)。The 3D printing integrated cooling heat sink device provided in this embodiment avoids the additional thermal stress and thermal resistance caused by the welding of various layers in the prior art. In addition, the material of the device is nickel-based alloy powder or tungsten-copper alloy powder with different proportions, which has good corrosion resistance and long life, and its thermal matching coefficient is better than that of oxygen-free copper material, which can reduce the heat loss caused by heat. The thermal expansion coefficient of the sink and the laser chip does not match, resulting in a smile effect (when the high-power semiconductor laser array is working, the temperature gradient from the laser to the heat sink is very large, due to the substrate material (gallium arsenide) of the semiconductor laser array and the heat sink The linear thermal expansion coefficient of the material (oxygen-free copper) does not match, which leads to the generation of thermal stress. Thermal stress causes the displacement of each light-emitting unit in the semiconductor laser array in the direction perpendicular to the P-N junction. In addition, the light-emitting size perpendicular to the direction of the P-N junction is only about 1 micron, so a small displacement has a greater impact on the light emission, so that each light-emitting unit in the array is not in a straight line, resulting in the overall light-emitting bending of the semiconductor laser, this phenomenon is called the smile effect).
同时,采用镍基合金粉末或钨铜合金粉作为打印材料,装置内部表层不再需要镀金,避免出现现有技术中因长期使用内部金层脱落而导致热沉堵塞的问题,镍及合金材料制备的热沉结构性要好于传统的铜材料,因而冷却水流可以比传统制备的热沉流量更大,散热效果更好。At the same time, nickel-based alloy powder or tungsten-copper alloy powder is used as the printing material, and the inner surface of the device does not need to be plated with gold, which avoids the problem of heat sink blockage caused by long-term use of the internal gold layer in the prior art. Preparation of nickel and alloy materials The structure of the heat sink is better than that of traditional copper materials, so the cooling water flow can be larger than that of traditionally prepared heat sinks, and the heat dissipation effect is better.
综上所述,本发明提供了一种半导体激光器冷却热沉装置。导热介质从进水孔进入该装置后,在进水层的空腔中缓流,通过导引层的通孔流入回水层的微通道中,最终经过回水层的出水通道从出水孔流出,实现了导热介质在装置内的匀速循环流动。此外,本装置通过3D打印技术一体成型制备,避免了现有技术中各层之间由于焊接所引入的额外的热应力及热阻,提高了装置整体的散热能力。且采用镍基合金粉或钨铜合金粉作为材料进行3D打印,可以很好的实现热沉与耙条芯片的,且装置内壁不需要镀金,也避免了现有技术中由于长期使用无氧铜表面金层脱落而导致热沉堵塞的问题,提高换热效率。To sum up, the present invention provides a semiconductor laser cooling heat sink device. After the heat conduction medium enters the device from the water inlet hole, it flows slowly in the cavity of the water inlet layer, flows into the microchannel of the return water layer through the through hole of the guide layer, and finally flows out of the water outlet hole through the water outlet channel of the return water layer , to realize the uniform circulation flow of the heat transfer medium in the device. In addition, the device is integrally formed by 3D printing technology, which avoids the additional thermal stress and thermal resistance introduced by welding between layers in the prior art, and improves the overall heat dissipation capacity of the device. Moreover, nickel-based alloy powder or tungsten-copper alloy powder is used as material for 3D printing, which can well realize the integration of heat sink and rake chip, and the inner wall of the device does not need to be plated with gold, which also avoids the long-term use of oxygen-free copper in the prior art. The problem of heat sink blockage caused by the peeling off of the gold layer on the surface improves the heat exchange efficiency.
以上实施方式仅用于说明本发明,而并非对本发明的限制,有关技术领域的普通技术人员,在不脱离本发明的精神和范围的情况下,还可以做出各种变化和变型,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应由权利要求限定。The above embodiments are only used to illustrate the present invention, but not to limit the present invention. Those of ordinary skill in the relevant technical field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, all Equivalent technical solutions also belong to the category of the present invention, and the scope of patent protection of the present invention should be defined by the claims.
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