CN105280134A - Shift register circuit and operation method thereof - Google Patents
Shift register circuit and operation method thereof Download PDFInfo
- Publication number
- CN105280134A CN105280134A CN201510725407.5A CN201510725407A CN105280134A CN 105280134 A CN105280134 A CN 105280134A CN 201510725407 A CN201510725407 A CN 201510725407A CN 105280134 A CN105280134 A CN 105280134A
- Authority
- CN
- China
- Prior art keywords
- transistor
- circuit
- terminal
- signal
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
一种移位寄存器电路及其操作方法,该寄存器电路包括输入电路、第一下拉电路、上拉电路、第二下拉电路以及一第一补偿电路。输入电路是用来输出一驱动电路控制信号,第一下拉电路与输入电路电性耦接,是用以将驱动电路控制信号下拉至低电压电平,上拉电路与输入电路电性耦接,是用以根据驱动电路控制信号输出一第n级栅极驱动信号,第二下拉电路与上拉电路电性耦接,是用以将第n级栅极驱动信号下拉至低电压电平,当第一补偿电路的第一端的电位大于第一补偿电路的第二端的电位时,第一补偿电路产生由第一端往第二端流动的一第一电流以补偿驱动电路控制信号。
A shift register circuit and an operation method thereof, the register circuit comprising an input circuit, a first pull-down circuit, a pull-up circuit, a second pull-down circuit and a first compensation circuit. The input circuit is used to output a drive circuit control signal, the first pull-down circuit is electrically coupled to the input circuit, and is used to pull down the drive circuit control signal to a low voltage level, the pull-up circuit is electrically coupled to the input circuit, and is used to output an n-th level gate drive signal according to the drive circuit control signal, the second pull-down circuit is electrically coupled to the pull-up circuit, and is used to pull down the n-th level gate drive signal to a low voltage level, and when the potential of the first end of the first compensation circuit is greater than the potential of the second end of the first compensation circuit, the first compensation circuit generates a first current flowing from the first end to the second end to compensate for the drive circuit control signal.
Description
技术领域technical field
本发明涉及一种移位寄存器电路,尤其涉及一种应用于内嵌式触控显示装置的移位寄存器电路及其操作方法。The present invention relates to a shift register circuit, in particular to a shift register circuit applied to an embedded touch display device and an operation method thereof.
背景技术Background technique
现有的内嵌式触控显示装置包括具有触控感测元件的显示面板以及栅极驱动电路,栅极驱动电路还包括多个移位寄存器电路,移位寄存器电路是用以根据驱动信号正确地输出多个栅极驱动信号来驱动显示面板中的多个像素电路。当内嵌式触控显示装置感测到有触控事件发生时,内嵌式触控显示装置会由正常显示显示画面的显示时段进入感测触控事件的触控感测时段,此时应输出栅极驱动信号的移位寄存器电路会停止输出栅极驱动信号,内嵌式触控显示装置即停止更新显示画面,并同时进行触控感测。而此时移位寄存器电路已接收了驱动信号旦尚未输出栅极驱动信号,其驱动信号会因为移位寄存器电路中的漏电路径而泄漏其电压电平,因此当内嵌式触控显示装置结束触控感测时段并回复至一般显示时段时,应输出栅极驱动信号的移位寄存器电路的驱动信号因为漏电而使得驱动能力降低,导致移位寄存器电路输出的栅极驱动信号与触控感测时段前所输出的栅极驱动信号能力不同,进而使显示画面出现横纹,造成使用者在观赏显示画面时具有较差的观赏效果。The existing in-cell touch display device includes a display panel with touch sensing elements and a gate drive circuit, the gate drive circuit also includes a plurality of shift register circuits, and the shift register circuits are used to correctly output a plurality of gate driving signals to drive a plurality of pixel circuits in the display panel. When the in-cell touch display device senses that a touch event has occurred, the in-cell touch display device will enter the touch sensing period for sensing touch events from the display period for normally displaying the display screen. The shift register circuit outputting the gate driving signal will stop outputting the gate driving signal, and the embedded touch display device will stop updating the display screen and perform touch sensing at the same time. At this time, the shift register circuit has received the drive signal but has not yet output the gate drive signal, the drive signal will leak its voltage level due to the leakage path in the shift register circuit, so when the embedded touch display device ends When the touch sensing period returns to the normal display period, the drive signal of the shift register circuit that should output the gate drive signal is reduced due to leakage, which causes the gate drive signal output by the shift register circuit to be inconsistent with the touch sense. The gate drive signal output before the test period has different capabilities, which causes horizontal stripes to appear on the display screen, resulting in a poor viewing effect for the user when watching the display screen.
发明内容Contents of the invention
为了有效解决因为栅极驱动信号在触控感测时段时发生漏电而使内嵌式触控显示装置的显示画面出现横纹的缺憾,本发明提出一种移位寄存器电路的实施例,其包括输入电路、第一下拉电路、上拉电路、第二下拉电路以及一第一补偿电路,输入电路是用以根据第n-1级栅极驱动信号来输出一驱动电路控制信号,第一下拉电路与输入电路电性耦接,是用以将驱动电路控制信号下拉至低电压电平,上拉电路与输入电路电性耦接,是用以根据驱动电路控制信号输出一第n级栅极驱动信号,第二下拉电路与上拉电路电性耦接,是用以将第n级栅极驱动信号下拉至低电压电平,第一补偿电路具有一第一端以及一第二端,第一补偿电路的第一端与一第一补偿电路控制信号电性耦接,第一补偿电路的第二端与输入电路以及上拉电路电性耦接,于一触控感测时段,第一补偿电路控制信号为一高电压电平,第n级栅极驱动信号为禁能,第一补偿电路的第一端的电位大于第一补偿电路的第二端的电位时,第一补偿电路产生由第一端往第二端流动的一第一电流以补偿驱动电路控制信号。In order to effectively solve the defect that horizontal stripes appear on the display screen of the in-cell touch display device due to leakage of the gate drive signal during the touch sensing period, the present invention proposes an embodiment of a shift register circuit, which includes The input circuit, the first pull-down circuit, the pull-up circuit, the second pull-down circuit and a first compensation circuit, the input circuit is used to output a driving circuit control signal according to the n-1th stage gate driving signal, the first lower The pull-up circuit is electrically coupled with the input circuit, and is used to pull down the control signal of the drive circuit to a low voltage level, and the pull-up circuit is electrically coupled with the input circuit, and is used to output an n-th gate according to the control signal of the drive circuit. pole drive signal, the second pull-down circuit is electrically coupled to the pull-up circuit, and is used to pull down the nth gate drive signal to a low voltage level, the first compensation circuit has a first end and a second end, The first end of the first compensation circuit is electrically coupled to a first compensation circuit control signal, the second end of the first compensation circuit is electrically coupled to the input circuit and the pull-up circuit, and during a touch sensing period, the second end of the first compensation circuit is electrically coupled to the input circuit and the pull-up circuit. The control signal of a compensation circuit is at a high voltage level, the gate driving signal of the nth level is disabled, and when the potential of the first terminal of the first compensation circuit is greater than the potential of the second terminal of the first compensation circuit, the first compensation circuit generates A first current flowing from the first terminal to the second terminal compensates the driving circuit control signal.
在本发明的较佳实施例中,上述的第一补偿电路还包括一第一二极管以及一第二二极管,第一二极管以及第二二极管皆包括一正极端以及一负极端,第一二极管的正极端与第一补偿电路控制信号电性耦接,第一二极管的负极端与第二二极管的负极端电性耦接,第二二极管体的正极端与输入电路以及上拉电路电性耦接。In a preferred embodiment of the present invention, the above-mentioned first compensation circuit further includes a first diode and a second diode, and both the first diode and the second diode include an anode terminal and a The negative terminal, the positive terminal of the first diode is electrically coupled to the control signal of the first compensation circuit, the negative terminal of the first diode is electrically coupled to the negative terminal of the second diode, and the second diode The positive end of the body is electrically coupled to the input circuit and the pull-up circuit.
在本发明的较佳实施例中,上述的第二二极管的尺寸大于第一二极管。In a preferred embodiment of the present invention, the size of the above-mentioned second diode is larger than that of the first diode.
在本发明的较佳实施例中,上述的第一补偿电路还包括一第二输入电路、一第一晶体管、一第二晶体管、一第三晶体管,第一晶体管具有一第一端、一第二端以及一控制端,第一晶体管的第一端与第二输入电路电性耦接,第一晶体管的控制端与一控制信号电性耦接,第一晶体管的第二端与低电压电平电性耦接,第二晶体管具有一第一端、一第二端以及一控制端,第二晶体管的第一端是用以接收第一补偿电路控制信号,第二晶体管的控制端与第一晶体管的第一端电性耦接,第三晶体管具有一第一端、一第二端以及一控制端,第三晶体管的第一端与第二晶体管的第二端电性耦接,第三晶体管的控制端是用以接收第一补偿电路控制信号,第三晶体管的第二端与第一补偿电路的第二端电性耦接。In a preferred embodiment of the present invention, the above-mentioned first compensation circuit further includes a second input circuit, a first transistor, a second transistor, and a third transistor, and the first transistor has a first terminal, a first Two terminals and a control terminal, the first terminal of the first transistor is electrically coupled to the second input circuit, the control terminal of the first transistor is electrically coupled to a control signal, the second terminal of the first transistor is connected to the low voltage circuit Electrically coupled, the second transistor has a first terminal, a second terminal and a control terminal, the first terminal of the second transistor is used to receive the first compensation circuit control signal, the control terminal of the second transistor is connected to the first terminal The first end of a transistor is electrically coupled, the third transistor has a first end, a second end and a control end, the first end of the third transistor is electrically coupled to the second end of the second transistor, and the third transistor is electrically coupled to the second end of the second transistor. The control terminal of the three transistors is used to receive the control signal of the first compensation circuit, and the second terminal of the third transistor is electrically coupled to the second terminal of the first compensation circuit.
在本发明的较佳实施例中,上述的第一补偿电路还包括一第一晶体管、一第二晶体管、一第三晶体管以及一第四晶体管,第一晶体管具有一第一端、一第二端以及一控制端,第一晶体管的第一端是用以接收一第一扫描信号,第一晶体管的控制端是用以接收一第n-1级栅极驱动信号,第二晶体管具有一第一端、一第二端以及一控制端,第二晶体管的第一端是用以接收一第二扫描信号,第二晶体管的控制端是用以接收一第n+1级栅极驱动信号,第二晶体管的第二端与第一晶体管的第二端电性耦接,第三晶体管具有一第一端、一第二端以及一控制端,第三晶体管的第一端是用以接收第一补偿电路控制信号,第三晶体管的控制端与第一晶体管的第二端电性耦接,第四晶体管具有一第一端、一第二端以及一控制端,第四晶体管的第一端与第三晶体管的第二端电性耦接,第四晶体管的控制端是用以接收第一补偿电路控制信号,第四晶体管的第二端与第一补偿电路的第二端电性耦接。In a preferred embodiment of the present invention, the above-mentioned first compensation circuit further includes a first transistor, a second transistor, a third transistor and a fourth transistor, the first transistor has a first terminal, a second terminal and a control terminal, the first terminal of the first transistor is used to receive a first scan signal, the control terminal of the first transistor is used to receive an n-1th level gate drive signal, and the second transistor has a first One terminal, a second terminal and a control terminal, the first terminal of the second transistor is used to receive a second scan signal, the control terminal of the second transistor is used to receive an n+1th stage gate drive signal, The second terminal of the second transistor is electrically coupled to the second terminal of the first transistor. The third transistor has a first terminal, a second terminal and a control terminal. The first terminal of the third transistor is used to receive the first terminal. A compensation circuit control signal, the control terminal of the third transistor is electrically coupled to the second terminal of the first transistor, the fourth transistor has a first terminal, a second terminal and a control terminal, the first terminal of the fourth transistor Electrically coupled with the second end of the third transistor, the control end of the fourth transistor is used to receive the control signal of the first compensation circuit, the second end of the fourth transistor is electrically coupled with the second end of the first compensation circuit .
在本发明的较佳实施例中,上述的移位寄存器电路还包括一第二补偿电路,其具有一第一端以及一第二端,第二补偿电路的第一端与一第二补偿电路控制信号电性耦接,第二补偿电路的第二端与输入电路以及上拉电路电性耦接。In a preferred embodiment of the present invention, the above-mentioned shift register circuit further includes a second compensation circuit, which has a first terminal and a second terminal, and the first terminal of the second compensation circuit is connected to a second compensation circuit The control signal is electrically coupled, and the second end of the second compensation circuit is electrically coupled to the input circuit and the pull-up circuit.
本发明更提出一种移位寄存器电路的操作方法,上述的移位寄存器电路包括上拉电路以及补偿电路,上拉电路是用以根据一驱动电路控制信号输出一第n级栅极驱动信号,补偿电路具有一第一端以及一第二端,补偿电路的第一端与一补偿电路控制信号电性耦接,补偿电路的第二端与上拉电路电性耦接,其中移位寄存器电路的操作方法包括:于一触控感测时段,第n级栅极驱动信号为禁能,补偿电路控制信号为一高电压电平且第一补偿电路的第一端的电位大于第一补偿电路的第二端的电位,补偿电路产生由第一端往第二端流动的一第一电流以补偿驱动电路控制信号。The present invention further proposes an operation method of a shift register circuit. The shift register circuit includes a pull-up circuit and a compensation circuit. The pull-up circuit is used to output an n-th stage gate drive signal according to a drive circuit control signal. The compensation circuit has a first terminal and a second terminal, the first terminal of the compensation circuit is electrically coupled to a compensation circuit control signal, and the second terminal of the compensation circuit is electrically coupled to the pull-up circuit, wherein the shift register circuit The operation method includes: during a touch sensing period, the gate driving signal of the nth stage is disabled, the compensation circuit control signal is at a high voltage level, and the potential of the first end of the first compensation circuit is greater than that of the first compensation circuit The potential of the second end of the compensation circuit generates a first current flowing from the first end to the second end to compensate the driving circuit control signal.
在本发明的其他实施例中,上述的移位寄存器电路的操作方法还包括:于一显示时段,第n级栅极驱动信号于显示时段被致能,补偿电路控制信号为一低电压电平,第一补偿电路的第二端的电位大于第一补偿电路的第一端的电位,补偿电路产生由第二端往第一端流动的一第二电流。In other embodiments of the present invention, the above-mentioned operation method of the shift register circuit further includes: during a display period, the gate driving signal of the nth stage is enabled during the display period, and the compensation circuit control signal is at a low voltage level , the potential of the second terminal of the first compensation circuit is greater than the potential of the first terminal of the first compensation circuit, and the compensation circuit generates a second current flowing from the second terminal to the first terminal.
本发明所提出的移位寄存器电路实施例因具有上述的补偿电路,因此应输出栅极驱动信号的移位寄存器电路在触控感测时段时,可利用补偿电路所产生的电流来补偿驱动电路控制信号,故当触控感测时段结束,应输出栅极驱动信号的移位寄存器电路的驱动电路控制信号仍与触控感测时段前的驱动电路控制信号具有相同的驱动能力,避免因为驱动电路控制信号的驱动能力下降而发生显示画面出现横纹的情况。The embodiment of the shift register circuit proposed by the present invention has the above-mentioned compensation circuit, so the shift register circuit that should output the gate drive signal can use the current generated by the compensation circuit to compensate the drive circuit during the touch sensing period. Therefore, when the touch sensing period ends, the drive circuit control signal of the shift register circuit that should output the gate drive signal still has the same driving capability as the drive circuit control signal before the touch sensing period, avoiding the The driving ability of the circuit control signal is reduced, and horizontal stripes appear on the display screen.
为让本发明的上述和其他目的、特征和优点能更明显易懂,下文特举较佳实施例并配合说明书附图做详细说明如下。In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments are described below in detail together with the accompanying drawings.
附图说明Description of drawings
图1为内嵌式触控显示装置的实施例示意图。FIG. 1 is a schematic diagram of an embodiment of an in-cell touch display device.
图2为本发明的移位寄存器电路的实施例一示意图。FIG. 2 is a schematic diagram of Embodiment 1 of the shift register circuit of the present invention.
图3A为本发明的补偿电路的实施例一示意图。FIG. 3A is a schematic diagram of Embodiment 1 of the compensation circuit of the present invention.
图3B为本发明的补偿电路的实施例二示意图。FIG. 3B is a schematic diagram of Embodiment 2 of the compensation circuit of the present invention.
图4A为本发明的补偿电路的实施例三示意图。FIG. 4A is a schematic diagram of Embodiment 3 of the compensation circuit of the present invention.
图4B为本发明的补偿电路的实施例四示意图。FIG. 4B is a schematic diagram of Embodiment 4 of the compensation circuit of the present invention.
图4C为本发明的补偿电路的实施例五示意图。FIG. 4C is a schematic diagram of Embodiment 5 of the compensation circuit of the present invention.
图5A为本发明第二输入电路的实施例一示意图。FIG. 5A is a schematic diagram of Embodiment 1 of the second input circuit of the present invention.
图5B为本发明第二输入电路的实施例二示意图。FIG. 5B is a schematic diagram of Embodiment 2 of the second input circuit of the present invention.
图6A为本发明的补偿电路的实施例六示意图。FIG. 6A is a schematic diagram of Embodiment 6 of the compensation circuit of the present invention.
图6B为本发明的补偿电路的实施例七示意图。FIG. 6B is a schematic diagram of Embodiment 7 of the compensation circuit of the present invention.
图7为本发明的信号时序实施例示意图。FIG. 7 is a schematic diagram of a signal timing embodiment of the present invention.
图8为本发明的另一信号时序实施例示意图。FIG. 8 is a schematic diagram of another signal timing embodiment of the present invention.
图9为本发明的移位寄存器电路的实施例二示意图。FIG. 9 is a schematic diagram of Embodiment 2 of the shift register circuit of the present invention.
图10为本发明的移位寄存器电路的操作方法实施例示意图。FIG. 10 is a schematic diagram of an embodiment of the operation method of the shift register circuit of the present invention.
图11为本发明的移位寄存器电路的操作方法另一实施例示意图。FIG. 11 is a schematic diagram of another embodiment of the operation method of the shift register circuit of the present invention.
附图标记说明:Explanation of reference signs:
10内嵌式触控显示装置10 Embedded touch display device
11数据驱动电路11 data drive circuit
12栅极驱动电路12 gate drive circuit
121移位寄存器电路121 shift register circuit
1211输入电路1211 input circuit
1212第一下拉电路1212 first pull-down circuit
1213上拉电路1213 pull-up circuit
1214第二下拉电路1214 second pull-down circuit
1215第一补偿电路1215 first compensation circuit
1216第二补偿电路1216 second compensation circuit
13显示面板13 display panel
14触控感测电路14 Touch Sensing Circuit
131像素单元131 pixel unit
132触控感测单元132 touch sensing units
40第二输入电路40 second input circuit
M1、M2、M3、M4、M5、M6、M7、M8、M9、M10、M11、M12、M13、M14、M15、M16、M17、M18、M31、M32晶体管M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, M15, M16, M17, M18, M31, M32 Transistors
Bi输入信号Bi input signal
Gn-5第n-5级栅极驱动信号G n- 5 level n-5 gate drive signal
Gn-4第n-4级栅极驱动信号G n-4 n-4 level gate drive signal
Gn-3第n-3级栅极驱动信号G n- 3 level n-3 gate drive signal
Gn-2第n-2级栅极驱动信号G n- 2 level n-2 gate drive signal
Gn-1第n-1级栅极驱动信号G n- 1 level n-1 gate drive signal
Gn第n级栅极驱动信号G n nth stage gate drive signal
Gn+1第n+1级栅极驱动信号G n+ 1 level n+1 gate drive signal
CK第一时脉信号CK first clock signal
XCK第二时脉信号XCK second clock signal
VGL低电压电平VGL low voltage level
C1、C2、C3、C4电容C1, C2, C3, C4 capacitors
Qn驱动电路控制信号Q n drive circuit control signal
Reset1第一补偿电路控制信号Reset1 first compensation circuit control signal
Reset2第二补偿电路控制信号Reset2 second compensation circuit control signal
D1第一二极管D1 first diode
D2第二二极管D2 second diode
V1、V2高电压电平V 1 , V 2 high voltage level
T1、T2、T3、TD、TS时段T 1 , T 2 , T 3 , T D , T S period
U2D第一扫描信号U2D first scan signal
D2U第二扫描信号D2U second scan signal
L1、L2、Ln列L 1, L 2, L n columns
具体实施方式detailed description
图1为内嵌式触控显示装置10的实施例,内嵌式触控显示装置10包括一数据驱动电路11、一栅极驱动电路12、一显示面板13、一触控感测电路14以及一时脉控制电路15,显示面板13包括多个像素单元131以及多个触控感测单元132,数据驱动电路11与多个像素单元131电性耦接,是用以提供多个显示数据至电性耦接的多个像素单元131,触控感测电路14与多个触控感测单元132电性耦接,是用以接收多个触控感测单元132的触控感测信号,以判定触控事件的位置,栅极驱动电路12还包括多个移位寄存器电路121,每一移位寄存器电路121与对应的多个像素单元131电性耦接,移位寄存器电路121是用以让电性耦接的多个像素单元131可根据移位寄存器电路121所输出的栅极驱动信号开启,以使多个像素单元131可在正确的时段接收多个显示数据并据以显示,时脉控制电路15与数据驱动电路11、触控感测电路14以及多个移位寄存器电路121电性耦接,是用以提供多个时脉信号,例如第一时脉信号CK、第二时脉信号XCK以及补偿电路控制信号Reset至多个移位寄存器电路121,并根据内嵌式触控显示装置10的运作时段控制输出的时脉信号至电性耦接的数据驱动电路11以及触控感测电路14。1 is an embodiment of an in-cell touch display device 10. The in-cell touch display device 10 includes a data drive circuit 11, a gate drive circuit 12, a display panel 13, a touch sensing circuit 14 and A clock control circuit 15, the display panel 13 includes a plurality of pixel units 131 and a plurality of touch sensing units 132, the data drive circuit 11 is electrically coupled with the plurality of pixel units 131, and is used to provide a plurality of display data to the circuit The plurality of pixel units 131 are electrically coupled, and the touch sensing circuit 14 is electrically coupled to the plurality of touch sensing units 132 for receiving touch sensing signals of the plurality of touch sensing units 132, so as to To determine the position of the touch event, the gate drive circuit 12 also includes a plurality of shift register circuits 121, each shift register circuit 121 is electrically coupled to a corresponding plurality of pixel units 131, and the shift register circuits 121 are used for The plurality of pixel units 131 electrically coupled can be turned on according to the gate driving signal output by the shift register circuit 121, so that the plurality of pixel units 131 can receive a plurality of display data at a correct time period and display accordingly. The pulse control circuit 15 is electrically coupled with the data driving circuit 11, the touch sensing circuit 14 and a plurality of shift register circuits 121, and is used to provide a plurality of clock signals, such as the first clock signal CK, the second clock signal The pulse signal XCK and the compensation circuit control signal Reset are sent to a plurality of shift register circuits 121, and the output clock signal is controlled according to the operation period of the embedded touch display device 10 to the electrically coupled data drive circuit 11 and touch sense Test circuit 14.
图2为本发明的移位寄存器121的实施例,并以第n级的移位寄存器121为例。第n级的移位寄存器121包括一输入电路1211、一第一下拉电路1212、一第二下拉电路1214、一上拉电路1213以及一第一补偿电路1215。输入电路1211包括一晶体管M4,晶体管M4包括一第一端、一控制端以及一第二端,晶体管M4的第一端是用以接收一输入信号Bi,晶体管M4的控制端是用以接收上一级的移位寄存器121所输出的第n-1级栅极驱动信号Gn-1,晶体管M4的第二端则是用以输出一驱动电路控制信号Qn。第n级的移位寄存器121还包括一电容C1,电容C1包括一第一端以及一第二端,电容C1的第一端更与一第一时脉信号CK电性耦接。FIG. 2 is an embodiment of the shift register 121 of the present invention, and the nth stage shift register 121 is taken as an example. The n-th shift register 121 includes an input circuit 1211 , a first pull-down circuit 1212 , a second pull-down circuit 1214 , a pull-up circuit 1213 and a first compensation circuit 1215 . The input circuit 1211 includes a transistor M4, the transistor M4 includes a first terminal, a control terminal and a second terminal, the first terminal of the transistor M4 is used to receive an input signal Bi, and the control terminal of the transistor M4 is used to receive the above The second terminal of the transistor M4 is used to output a driving circuit control signal Q n for the n−1th stage gate driving signal G n−1 outputted by the shift register 121 of one stage. The shift register 121 of the nth stage further includes a capacitor C1. The capacitor C1 includes a first terminal and a second terminal. The first terminal of the capacitor C1 is further electrically coupled to a first clock signal CK.
第一下拉电路1212包括晶体管M1、晶体管M2以及晶体管M3,是用以将驱动电路控制信号Qn下拉至低电压电平VGL。晶体管M1包括一第一端、一控制端以及一第二端,晶体管M1的第一端是用以接收输入信号Bi,晶体管M1的控制端是用以接收下一级的移位寄存器121所输出的第n+1级栅极驱动信号Gn+1,晶体管M1的第二端则是与驱动电路控制信号Qn电性耦接。晶体管M2包括一第一端、一控制端以及一第二端,晶体管M2的第一端与电容C1的第二端电性耦接,晶体管M2的控制端是用以接收驱动电路控制信号Qn,晶体管M2的第二端则是与低电压电平VGL电性耦接,其中低电压电平VGL可以是逻辑低电位。晶体管M3包括一第一端、一控制端以及一第二端,晶体管M3的第一端与驱动电路控制信号Qn电性耦接,晶体管M3的控制端与电容C1的第二端电性耦接,晶体管M3的第二端则是与低电压电平VGL电性耦接。The first pull-down circuit 1212 includes a transistor M1 , a transistor M2 and a transistor M3 , and is used for pulling down the driving circuit control signal Qn to a low voltage level VGL. The transistor M1 includes a first terminal, a control terminal and a second terminal. The first terminal of the transistor M1 is used to receive the input signal Bi, and the control terminal of the transistor M1 is used to receive the output from the shift register 121 of the next stage. The gate driving signal Gn +1 of the n +1th stage, and the second terminal of the transistor M1 is electrically coupled to the driving circuit control signal Qn. The transistor M2 includes a first terminal, a control terminal and a second terminal. The first terminal of the transistor M2 is electrically coupled to the second terminal of the capacitor C1. The control terminal of the transistor M2 is used to receive the driving circuit control signal Q n , the second terminal of the transistor M2 is electrically coupled to the low voltage level VGL, wherein the low voltage level VGL may be a logic low potential. The transistor M3 includes a first terminal, a control terminal and a second terminal. The first terminal of the transistor M3 is electrically coupled to the driving circuit control signal Qn, and the control terminal of the transistor M3 is electrically coupled to the second terminal of the capacitor C1. connected, the second end of the transistor M3 is electrically coupled to the low voltage level VGL.
上拉电路1213包括一晶体管M7,是用以根据驱动电路控制信号Qn输出一第n级栅极驱动信号Gn,晶体管M7包括一第一端、一控制端以及一第二端,晶体管M7的第一端是用以接收第一时脉信号CK,晶体管M7的控制端是用以接收驱动电路控制信号Qn,晶体管M7第二端则是用以输出第n级栅极驱动信号Gn,此外第n级栅极驱动信号Gn更与一电容C2的第一端电性耦接,电容C2的第二端则与驱动电路控制信号Qn电性耦接。The pull-up circuit 1213 includes a transistor M7, which is used to output an nth stage gate drive signal Gn according to the drive circuit control signal Qn. The transistor M7 includes a first terminal, a control terminal and a second terminal. The transistor M7 The first end of the transistor M7 is used to receive the first clock signal CK, the control end of the transistor M7 is used to receive the drive circuit control signal Q n , and the second end of the transistor M7 is used to output the nth-level gate drive signal G n , in addition, the gate driving signal Gn of the nth stage is further electrically coupled to the first end of a capacitor C2, and the second end of the capacitor C2 is electrically coupled to the driving circuit control signal Qn.
第二下拉电路1214包括晶体管M5以及晶体管M6,是用以将第n级栅极驱动信号Gn下拉至低电压电平VGL,晶体管M5包括一第一端、一控制端以及一第二端,晶体管M5的第一端与第n级栅极驱动信号Gn电性耦接,晶体管M5的控制端与一第二时脉信号XCK电性耦接,晶体管M5的第二端则与低电压电平VGL电性耦接。晶体管M6包括一第一端、一控制端以及一第二端,晶体管M6的第一端与第n级栅极驱动信号Gn电性耦接,晶体管M6的控制端与电容C1的第二端电性耦接,晶体管M6的第二端则与低电压电平VGL电性耦接。The second pull-down circuit 1214 includes a transistor M5 and a transistor M6, and is used to pull down the gate driving signal G n of the nth stage to a low voltage level VGL. The transistor M5 includes a first terminal, a control terminal and a second terminal, The first terminal of the transistor M5 is electrically coupled to the gate driving signal Gn of the nth stage, the control terminal of the transistor M5 is electrically coupled to a second clock signal XCK, and the second terminal of the transistor M5 is electrically coupled to the low-voltage circuit. The flat VGL is electrically coupled. The transistor M6 includes a first terminal, a control terminal, and a second terminal. The first terminal of the transistor M6 is electrically coupled to the gate drive signal Gn of the nth stage, and the control terminal of the transistor M6 is connected to the second terminal of the capacitor C1. Electrically coupled, the second end of the transistor M6 is electrically coupled to the low voltage level VGL.
一第一补偿电路1215,其具有一第一端以及一第二端,第一补偿电路1215的第一端与一第一补偿电路控制信号Reset1电性耦接,第一补偿电路的第二端与驱动电路控制信号Qn电性耦接。A first compensation circuit 1215, which has a first end and a second end, the first end of the first compensation circuit 1215 is electrically coupled to a first compensation circuit control signal Reset1, the second end of the first compensation circuit It is electrically coupled with the driving circuit control signal Qn.
请参考图3A以及图3B,图3A以及图3B为上述的第一补偿电路1215的实施例。请先参考图3A,图3A为上述的第一补偿电路1215的实施例一,第一补偿电路1215可包括一第一二极管D1以及一第二二极管D2,第一二极管D1以及第二二极管D2皆包括一正极端以及一负极端,第一二极管D1的正极端与第一补偿电路控制信号Reset1电性耦接,第一二极管D1的负极端与第二二极管D2的负极端电性耦接,第二二极管体D2的正极端与驱动电路控制信号Qn电性耦接。图3B为上述的第一补偿电路1215的实施例二,第一补偿电路1215可包括一晶体管M31以及一晶体管M32,晶体管M31包括一第一端、一控制端以及一第二端,晶体管M32包括一第一端、一控制端以及一第二端,晶体管M31第一端与晶体管M31的控制端以及第一补偿电路控制信号Reset1电性耦接,晶体管M31的第二端与晶体管M32的第二端电性耦接,晶体管M32的第一端与晶体管M32的控制端以及驱动电路控制信号Qn电性耦接。Please refer to FIG. 3A and FIG. 3B . FIG. 3A and FIG. 3B are embodiments of the above-mentioned first compensation circuit 1215 . Please refer to FIG. 3A first. FIG. 3A is the first embodiment of the above-mentioned first compensation circuit 1215. The first compensation circuit 1215 may include a first diode D1 and a second diode D2. The first diode D1 and the second diode D2 both include a positive terminal and a negative terminal, the positive terminal of the first diode D1 is electrically coupled to the first compensation circuit control signal Reset1, and the negative terminal of the first diode D1 is electrically coupled to the first compensation circuit control signal Reset1. The negative terminal of the second diode D2 is electrically coupled, and the positive terminal of the second diode D2 is electrically coupled to the driving circuit control signal Qn. FIG. 3B is the second embodiment of the above-mentioned first compensation circuit 1215. The first compensation circuit 1215 may include a transistor M31 and a transistor M32. The transistor M31 includes a first terminal, a control terminal and a second terminal. The transistor M32 includes A first terminal, a control terminal and a second terminal, the first terminal of the transistor M31 is electrically coupled to the control terminal of the transistor M31 and the first compensation circuit control signal Reset1, the second terminal of the transistor M31 is connected to the second terminal of the transistor M32 The terminal is electrically coupled, and the first terminal of the transistor M32 is electrically coupled to the control terminal of the transistor M32 and the driving circuit control signal Qn.
请参考图4A,图4A为上述的第一补偿电路1215的实施例三,其包括电容C3、第二输入电路40、晶体管M11、晶体管M8以及晶体管M9,晶体管M11具有一第一端、一第二端以及一控制端,晶体管M11的第一端与第二输入电路40电性耦接,晶体管M11的控制端与第n级栅极驱动信号Gn电性耦接,晶体管M11的第二端与低电压电平VGL电性耦接。晶体管M8具有一第一端、一第二端以及一控制端,晶体管M8的第一端与第一补偿电路控制信号Reset1电性耦接,晶体管M8的控制端与晶体管M11的第一端电性耦接,晶体管M8的第二端则与电容C3电性耦接。电容C3具有一第一端以及一第二端,电容C3的第一端与晶体管M8的第二端电性耦接,电容C3的第二端与晶体管M8的控制端电性耦接。晶体管M9具有一第一端、一第二端以及一控制端,晶体管M9的第一端与晶体管M8的第二端电性耦接,晶体管M9的控制端接收第一补偿电路控制信号Reset1,晶体管M9的第二端与驱动电路控制信号Qn电性耦接。Please refer to FIG. 4A. FIG. 4A is a third embodiment of the above-mentioned first compensation circuit 1215, which includes a capacitor C3, a second input circuit 40, a transistor M11, a transistor M8, and a transistor M9. The transistor M11 has a first terminal, a first Two terminals and a control terminal, the first terminal of the transistor M11 is electrically coupled to the second input circuit 40, the control terminal of the transistor M11 is electrically coupled to the nth stage gate drive signal Gn, and the second terminal of the transistor M11 Electrically coupled to the low voltage level VGL. The transistor M8 has a first terminal, a second terminal and a control terminal. The first terminal of the transistor M8 is electrically coupled to the first compensation circuit control signal Reset1, and the control terminal of the transistor M8 is electrically coupled to the first terminal of the transistor M11. The second end of the transistor M8 is electrically coupled to the capacitor C3. The capacitor C3 has a first terminal and a second terminal, the first terminal of the capacitor C3 is electrically coupled to the second terminal of the transistor M8, and the second terminal of the capacitor C3 is electrically coupled to the control terminal of the transistor M8. The transistor M9 has a first terminal, a second terminal and a control terminal, the first terminal of the transistor M9 is electrically coupled to the second terminal of the transistor M8, the control terminal of the transistor M9 receives the first compensation circuit control signal Reset1, and the transistor M9 The second terminal of M9 is electrically coupled to the driving circuit control signal Qn.
请参考图4B,图4B为上述的第一补偿电路1215的实施例四,图4B与图4A的差别在于,晶体管M11的控制端是与第一时脉信号CK电性耦接。Please refer to FIG. 4B . FIG. 4B is a fourth embodiment of the above-mentioned first compensation circuit 1215 . The difference between FIG. 4B and FIG. 4A is that the control terminal of the transistor M11 is electrically coupled to the first clock signal CK.
请参考图4C,图4C为上述的第一补偿电路1215的实施例五,图4C与图4A的差别在于,图4C还包括了晶体管M12,晶体管M12具有一第一端、一第二端以及一控制端,晶体管M12的第一端与晶体管M11的第一端电性耦接,晶体管M12的控制端与第一时脉信号CK电性耦接,晶体管M12的第二端与低电压电平电性耦接。其中,晶体管M12是用以根据第一时脉信号CK将晶体管M8的控制端维持于低电压电平VGL。Please refer to FIG. 4C. FIG. 4C is the fifth embodiment of the above-mentioned first compensation circuit 1215. The difference between FIG. 4C and FIG. 4A is that FIG. 4C also includes a transistor M12. The transistor M12 has a first terminal, a second terminal and A control terminal, the first terminal of the transistor M12 is electrically coupled to the first terminal of the transistor M11, the control terminal of the transistor M12 is electrically coupled to the first clock signal CK, and the second terminal of the transistor M12 is connected to the low voltage level electrically coupled. Wherein, the transistor M12 is used for maintaining the control terminal of the transistor M8 at the low voltage level VGL according to the first clock signal CK.
请参阅图5A,图5A为上述的第二输入电路40实施例一,第二输入电路40包括一晶体管M10,晶体管M10具有一第一端、一第二端以及一控制端,晶体管M10的第一端与高电压电平VGH电性耦接,晶体管M10的控制端接收第n-1级栅极驱动信号Gn-1,晶体管M10的第二端与晶体管M11的第一端电性耦接,此外,晶体管M10的第一端也可与第n-1级栅极驱动信号Gn-1电性耦接,如图5B所示。Please refer to FIG. 5A, FIG. 5A is the first embodiment of the above-mentioned second input circuit 40, the second input circuit 40 includes a transistor M10, the transistor M10 has a first terminal, a second terminal and a control terminal, the first terminal of the transistor M10 One terminal is electrically coupled to the high voltage level VGH, the control terminal of the transistor M10 receives the n-1th stage gate driving signal Gn -1 , and the second terminal of the transistor M10 is electrically coupled to the first terminal of the transistor M11 , in addition, the first end of the transistor M10 may also be electrically coupled to the n-1th stage gate driving signal Gn -1 , as shown in FIG. 5B .
由于显示面板13的像素单元131可以由图1所示的L1列往Ln列的方向驱动,也可以由Ln列往L1列的方向驱动,因此本发明更提出以下的第一补偿电路1215的实施例。Since the pixel unit 131 of the display panel 13 can be driven in the direction from column L to column L as shown in FIG. 1 , or from column L to column L, the present invention further proposes the following first compensation An embodiment of circuit 1215.
请参阅图6A,图6A为第一补偿电路1215的实施例六,其包括电容C4、晶体管M13、晶体管M14、晶体管M15以及晶体管M16。晶体管M13具有一第一端、一控制端以及一第二端,晶体管M13的第一端与一第一扫描信号U2D电性耦接,晶体管M13的控制端与第n-1级栅极驱动信号Gn-1电性耦接,晶体管M13的第二端与晶体管M14电性耦接。晶体管M14具有一第一端、一控制端以及一第二端,晶体管M14的第一端与一第二扫描信号D2U电性耦接,晶体管M14的控制端与第n+1级栅极驱动信号Gn+1电性耦接,晶体管M14的第二端与晶体管M13的第二端电性耦接。晶体管M15具有一第一端、一控制端以及一第二端,晶体管M15的第一端与第一补偿电路控制信号Reset1电性耦接,晶体管M15的控制端与晶体管M13的第二端电性耦接,晶体管M15的第二端与电容C4电性耦接。电容C4具有一第端以及一第二端,电容C4的第一端与晶体管M15的第二端电性耦接,电容C4的第二端与晶体管M15的控制端电性耦接。晶体管M16具有一第一端、一控制端以及一第二端,晶体管M16的第一端与晶体管M15的第二端电性耦接,晶体管M16的控制端与第一补偿电路控制信号Reset1电性耦接,晶体管M16的第二端与驱动电路控制信号Qn电性耦接。其中,当第一扫描信号U2D为致能,显示面板13的像素单元131由图1所示的L1列往Ln列的方向驱动,当第二扫描信号D2U为致能,显示面板13的像素单元131由图1所示的Ln列往L1列的方向驱动,第一扫描信号U2D与第二扫描信号D2U的致能时间以及禁能时间为相反。Please refer to FIG. 6A . FIG. 6A is a sixth embodiment of the first compensation circuit 1215 , which includes a capacitor C4 , a transistor M13 , a transistor M14 , a transistor M15 and a transistor M16 . The transistor M13 has a first terminal, a control terminal and a second terminal, the first terminal of the transistor M13 is electrically coupled to a first scanning signal U2D, the control terminal of the transistor M13 is connected to the n-1th stage gate driving signal Gn -1 is electrically coupled, and the second terminal of the transistor M13 is electrically coupled to the transistor M14. The transistor M14 has a first terminal, a control terminal and a second terminal, the first terminal of the transistor M14 is electrically coupled to a second scanning signal D2U, the control terminal of the transistor M14 is connected to the n+1th stage gate driving signal Gn +1 is electrically coupled, and the second end of the transistor M14 is electrically coupled to the second end of the transistor M13. The transistor M15 has a first terminal, a control terminal and a second terminal. The first terminal of the transistor M15 is electrically coupled to the first compensation circuit control signal Reset1, and the control terminal of the transistor M15 is electrically coupled to the second terminal of the transistor M13. Coupled, the second end of the transistor M15 is electrically coupled to the capacitor C4. The capacitor C4 has a first terminal and a second terminal, the first terminal of the capacitor C4 is electrically coupled to the second terminal of the transistor M15, and the second terminal of the capacitor C4 is electrically coupled to the control terminal of the transistor M15. The transistor M16 has a first terminal, a control terminal and a second terminal, the first terminal of the transistor M16 is electrically coupled to the second terminal of the transistor M15, the control terminal of the transistor M16 is electrically connected to the first compensation circuit control signal Reset1 Coupled, the second end of the transistor M16 is electrically coupled to the driving circuit control signal Qn. Wherein, when the first scanning signal U2D is enabled, the pixel unit 131 of the display panel 13 is driven from column L to column L shown in FIG. The pixel unit 131 is driven from column L n to column L 1 shown in FIG. 1 , and the enable time and disable time of the first scan signal U2D and the second scan signal D2U are opposite.
请参阅图6B,图6B为第一补偿电路1215的实施例七,图6B与图6A的差别在于,图6B的第一补偿电路1215实施例七还包括了晶体管M17以及晶体管M18。晶体管M17具有一第一端、一控制端以及一第二端,晶体管M17的第一端与晶体管M13的第二端电性耦接,晶体管M17的控制端与第n级栅极驱动信号Gn电性耦接,晶体管M17的第二端与低电压电平VGL电性耦接。晶体管M18具有一第一端、一控制端以及一第二端,晶体管M18的第一端与晶体管M13的第二端电性耦接,晶体管M18的控制端与第一时脉信号CK电性耦接,晶体管M18的第二端与低电压电平VGL电性耦接。其中,晶体管M17以及晶体管M18是用以根据第n级栅极驱动信号Gn以及第一时脉信号CK将晶体管M15的控制端,也就是晶体管M13的第二端维持于低电压电平VGL。Please refer to FIG. 6B . FIG. 6B is a seventh embodiment of the first compensation circuit 1215 . The difference between FIG. 6B and FIG. 6A is that the seventh embodiment of the first compensation circuit 1215 in FIG. 6B also includes a transistor M17 and a transistor M18 . The transistor M17 has a first terminal, a control terminal and a second terminal, the first terminal of the transistor M17 is electrically coupled to the second terminal of the transistor M13, the control terminal of the transistor M17 is connected to the nth stage gate drive signal G n Electrically coupled, the second end of the transistor M17 is electrically coupled to the low voltage level VGL. The transistor M18 has a first terminal, a control terminal and a second terminal. The first terminal of the transistor M18 is electrically coupled to the second terminal of the transistor M13. The control terminal of the transistor M18 is electrically coupled to the first clock signal CK. connected, the second end of the transistor M18 is electrically coupled to the low voltage level VGL. Wherein, the transistor M17 and the transistor M18 are used to maintain the control terminal of the transistor M15 , that is, the second terminal of the transistor M13 at the low voltage level VGL according to the nth stage gate driving signal Gn and the first clock signal CK.
请参考图7,图7为移位寄存器121的实施例的信号时序图,其包括第一时脉信号CK、第二时脉信号XCK、输入信号Bi、驱动电路控制信号Qn、第n级栅极驱动信号Gn、第n-1级栅极驱动信号Gn-1以及第n+1级栅极驱动信号Gn+1,其中,第一时脉信号CK与第二时脉信号XCK的致能时间以及禁能时间为相反。Please refer to FIG. 7. FIG. 7 is a signal timing diagram of an embodiment of the shift register 121, which includes the first clock signal CK, the second clock signal XCK, the input signal Bi, the drive circuit control signal Q n , the nth stage The gate driving signal G n , the gate driving signal G n-1 of the n-1th stage, and the gate driving signal G n+1 of the n+1st stage, wherein the first clock signal CK and the second clock signal XCK The enabling time and disabling time are reversed.
以下将配合图2以及图7来说明内嵌式触控显示装置10操作于无触控事件发生且正常显示并更新画面的一显示时段时,移位寄存器121的实施例的运作方法。The operation method of the embodiment of the shift register 121 will be described below with reference to FIG. 2 and FIG. 7 when the in-cell touch display device 10 operates in a display period when no touch event occurs and the screen is normally displayed and updated.
首先,在第n-1级栅极驱动信号Gn-1为致能电压电平,例如为逻辑高电位的时段T1,此时第n+1级栅极驱动信号Gn+1为非致能电压电平,例如为逻辑低电位,输入信号Bi为致能电压电平,例如为逻辑高电位,第一时脉信号CK为非致能电压电平,例如为逻辑低电位,第二时脉信号XCK为致能电压电平,例如为逻辑高电位。因此晶体管M4开启,驱动电路控制信号Qn因为晶体管M4开启使得其电压电平提升至一高电压电平V1,晶体管M1为关闭,晶体管M2因为驱动电路控制信号Qn提升至高电压电平V1而开启,而将电容C1的第二端下拉至低电压电平VGL,故晶体管M3与晶体管M6为关闭,而晶体管M7因为驱动电路控制信号Qn而开启,但由于第一时脉信号CK目前为非致能电压电平,因此第n级栅极驱动信号Gn为逻辑低电位,此外晶体管M5为开启更将第n级栅极驱动信号Gn维持于低电压电平VGL。Firstly, the gate drive signal G n-1 of the n-1th stage is at the enable voltage level, for example, a period T 1 of logic high potential, and at this time the gate drive signal G n+1 of the n+1-th stage is not The enable voltage level is, for example, a logic low level, the input signal Bi is an enable voltage level, for example, a logic high level, the first clock signal CK is a non-enable voltage level, for example, a logic low level, and the second The clock signal XCK is at an enabling voltage level, such as a logic high level. Therefore, the transistor M4 is turned on, the driving circuit control signal Qn is raised to a high voltage level V 1 because the transistor M4 is turned on, the transistor M1 is turned off, and the transistor M2 is turned on because the driving circuit control signal Qn is raised to a high voltage level V 1 is turned on, and the second end of the capacitor C1 is pulled down to the low voltage level VGL, so the transistor M3 and the transistor M6 are turned off, and the transistor M7 is turned on due to the driving circuit control signal Qn, but because the first clock signal CK is currently non- The voltage level is enabled, so the gate driving signal Gn of the nth stage is logic low potential, and the transistor M5 is turned on to maintain the gate driving signal Gn of the nth stage at the low voltage level VGL.
接着在时段T2,第n-1级栅极驱动信号Gn-1、第n+1级栅极驱动信号Gn+1以及第二时脉信号XCK为逻辑低电位,输入信号Bi以及第一时脉信号CK为逻辑高电位,此时晶体管M4以及晶体管M1为关闭,晶体管M2因为驱动电路控制信号Qn保持开启,晶体管M3与晶体管M6保持关闭,晶体管M5因为第二时脉信号XCK为逻辑低电位为关闭,而此时由于第一时脉信号CK为逻辑高电位又晶体管M7维持开启,因此晶体管M7会输出逻辑高电位的第n级栅极驱动信号Gn,同时第n级栅极驱动信号Gn会通过电容C2使驱动电路控制信号Qn由高电压电平V1提升至高电压电平V2,更增进晶体管M7的驱动能力。Then in the period T 2 , the gate driving signal Gn -1 of the n-1th stage, the gate driving signal Gn+1 of the n+ 1th stage and the second clock signal XCK are logic low potentials, and the input signal Bi and the The first clock signal CK is at logic high potential, at this time, the transistor M4 and the transistor M1 are turned off, the transistor M2 is kept on because of the driving circuit control signal Qn, the transistor M3 and the transistor M6 are kept off, and the transistor M5 is turned on because of the second clock signal XCK. The low potential is off, and at this time, since the first clock signal CK is logic high potential and the transistor M7 remains on, the transistor M7 will output the nth stage gate driving signal Gn of logic high potential, and the nth stage gate The driving signal G n increases the driving circuit control signal Qn from the high voltage level V 1 to the high voltage level V 2 through the capacitor C2 , further enhancing the driving capability of the transistor M7 .
在时段T3时,第n-1级栅极驱动信号Gn-1、输入信号Bi以及第一时脉信号CK为逻辑低电位,第二时脉信号XCK以及第n+1级栅极驱动信号Gn+1为逻辑高电位,晶体管M4为关闭,晶体管M1因为第n+1级栅极驱动信号Gn+1而开启,而此时由于输入信号Bi为逻辑低电位,因此驱动电路控制信号Qn被晶体管M1下拉至逻辑低电位,由于驱动电路控制信号Qn被下拉至逻辑低电位,因此晶体管M2以及M7为关闭,而此时电容C1利用上一时段T2所储存的第一时脉信号CK的逻辑高电位使晶体管M3以及晶体管M6开启,因此使驱动电路控制信号Qn以及第n级栅极驱动信号Gn被维持于逻辑低电位,晶体管M5为开启,将第n级栅极驱动信号Gn维持于逻辑低电位。In the period T3, the n - 1th stage gate drive signal G n-1 , the input signal Bi and the first clock signal CK are logic low potentials, the second clock signal XCK and the n+1th stage gate drive The signal Gn +1 is a logic high potential, the transistor M4 is turned off, and the transistor M1 is turned on because of the n+1th stage gate drive signal Gn +1 , and at this time, because the input signal Bi is a logic low potential, the drive circuit controls The signal Qn is pulled down to a logic low potential by the transistor M1. Since the drive circuit control signal Qn is pulled down to a logic low potential, the transistors M2 and M7 are turned off. At this time, the capacitor C1 utilizes the first clock signal stored in the previous period T2 The logic high potential of CK turns on the transistor M3 and the transistor M6, so that the drive circuit control signal Qn and the gate drive signal G n of the nth stage are maintained at a logic low potential, and the transistor M5 is turned on, and the gate drive signal of the nth stage Gn is maintained at a logic low level.
根据上述的内容可以得知,当内嵌式触控显示装置10操作显示时段时,晶体管M7在时段T1被驱动电路控制信号Qn开启后,紧接着在时段T2即会根据第一时脉信号CK输出第n级栅极驱动信号Gn,因此驱动电路控制信号Qn不易受到漏电影响而导致其驱动能力下降的情况发生。According to the above content, it can be known that when the in-cell touch display device 10 operates the display period, after the transistor M7 is turned on by the driving circuit control signal Qn in the period T1, immediately after the period T2, it will be activated according to the first clock signal CK. The gate driving signal Gn of the nth stage is output, so the driving circuit control signal Qn is less likely to be affected by electric leakage and cause its driving capability to decline.
请参考图8,图8为移位寄存器121的实施例操作于一触控感测时段的信号时序图,其包括第一时脉信号CK、第二时脉信号XCK、第n-1级栅极驱动信号Gn-1、第n-2级栅极驱动信号Gn-2、第n-3级栅极驱动信号Gn-3、第n-4级栅极驱动信号Gn-4、第n-5级栅极驱动信号Gn-5、第n级栅极驱动信号Gn、第n+1级栅极驱动信号Gn+1以及一第一补偿电路控制信号Reset1,其中,第一时脉信号CK与第二时脉信号XCK的致能时间以及禁能时间为相反。Please refer to FIG. 8. FIG. 8 is a signal timing diagram of an embodiment of the shift register 121 operating in a touch sensing period, which includes the first clock signal CK, the second clock signal XCK, the n-1th gate pole drive signal G n-1 , n-2th gate drive signal G n-2 , n-3th gate drive signal G n-3 , n-4th gate drive signal G n-4 , The n-5th level gate driving signal Gn -5 , the nth level gate driving signal Gn, the n +1st level gate driving signal Gn +1 , and a first compensation circuit control signal Reset1, wherein the first level The enabling time and disabling time of the first clock signal CK and the second clock signal XCK are opposite.
以下将配合图2以及图8来说明内嵌式触控显示装置10操作于触控事件发生的触控感测时段时,移位寄存器121的实施例的运作方法。The operation method of the embodiment of the shift register 121 when the in-cell touch display device 10 operates in the touch sensing period when a touch event occurs will be described below with reference to FIG. 2 and FIG. 8 .
当内嵌式触控显示装置10操作于上述的显示时段,也就是图8的时段TD时,多个移位寄存器121将如上述显示时段的操作方式循序输出多个栅极驱动信号,如第n-5级栅极驱动信号Gn-5、第n-4级栅极驱动信号Gn-4、第n-3级栅极驱动信号Gn-3、第n-2级栅极驱动信号Gn-2以及第n-1级栅极驱动信号Gn-1,因此内嵌式触控显示装置10的显示面板13会据以更新对应列的像素单元131以显示画面,此时第一补偿电路控制信号Reset1为一低电压电平,例如为逻辑低电位。而当内嵌式触控显示装置10发生了触控事件时,内嵌式触控显示装置10即操作于触控感测时段,即图8中的时段TS,第n-1级的移位寄存器电路121输出第n-1级栅极驱动信号Gn-1后发生了触控事件,因此第一补偿电路控制信号Reset1转换为一高电压电平,例如为逻辑高电位,而由于在触控感测时段时,内嵌式触控显示装置10停止更新显示画面,因此用以提供逻辑高电压给晶体管M7以输出第n级栅极驱动信号Gn的第一时脉信号CK以及第二时脉信号XCK,因为触控感测时段而维持于逻辑低电位,使原本应输出第n级栅极驱动信号Gn的第n级移位寄存器121不输出第n级栅极驱动信号Gn。When the in-cell touch display device 10 operates in the above-mentioned display period, that is, the period T D in FIG. Level n-5 gate drive signal G n-5 , gate drive signal n-4 level G n-4 , gate drive signal n-3 level G n-3 , gate drive signal n-2 level The signal Gn -2 and the n-1th level gate driving signal Gn -1 , so the display panel 13 of the in-cell touch display device 10 will update the pixel units 131 of the corresponding row to display the picture. A compensation circuit control signal Reset1 is a low voltage level, such as a logic low level. When a touch event occurs on the in-cell touch display device 10, the in-cell touch display device 10 is operating in the touch sensing period, that is, the period T S in FIG. A touch event occurs after the bit register circuit 121 outputs the n-1th level gate driving signal G n-1 , so the control signal Reset1 of the first compensation circuit is converted to a high voltage level, for example, a logic high level, and due to the During the touch sensing period, the in-cell touch display device 10 stops updating the display screen, so it is used to provide a logic high voltage to the transistor M7 to output the first clock signal CK and the second gate driving signal Gn of the nth stage. The second clock signal XCK is maintained at a logic low level due to the touch sensing period, so that the nth-level shift register 121 that should output the n-level gate driving signal G n does not output the n-level gate driving signal G n .
然此时第n级移位寄存器121已接收了第n-1级栅极驱动信号Gn-1,因此驱动电路控制信号Qn已提升至上述的高电压电平V1,但第n级移位寄存器121在触控感测时段并不输出第n级栅极驱动信号Gn,因此驱动电路控制信号Qn需维持高电压电平V1直到第n级移位寄存器121输出第n级栅极驱动信号Gn。而在输出第n级栅极驱动信号Gn之前,驱动电路控制信号Qn会因为晶体管M1、晶体管M3以及晶体管M4所形成的漏电路径漏电,因此当漏电发生时,第一补偿电路控制信号Reset1的逻辑高电位会高于目前驱动电路控制信号Qn的电压电平,第一补偿电路1215自然产生由其第一端往第二端流动的一第一电流来补偿驱动电路控制信号Qn,使驱动电路控制信号Qn的电压电平在不输出第n级栅极驱动信号Gn的触控感测时段可维持于高电压电平V1。However, at this time, the nth stage shift register 121 has received the n-1th stage gate drive signal Gn -1 , so the driving circuit control signal Qn has been raised to the above - mentioned high voltage level V1, but the nth stage The shift register 121 does not output the gate driving signal Gn of the nth stage during the touch sensing period, so the driving circuit control signal Qn needs to maintain a high voltage level V1 until the shift register 121 of the nth stage outputs the nth stage Gate drive signal G n . Before outputting the gate driving signal Gn of the nth stage, the driving circuit control signal Qn will leak due to the leakage path formed by the transistor M1, the transistor M3 and the transistor M4. Therefore, when the leakage occurs, the first compensation circuit control signal Reset1 The logic high potential of the drive circuit 1215 will be higher than the current voltage level of the drive circuit control signal Qn , and the first compensation circuit 1215 naturally generates a first current flowing from its first terminal to the second terminal to compensate the drive circuit control signal Qn , The voltage level of the driving circuit control signal Q n can be maintained at the high voltage level V 1 during the touch sensing period when the nth gate driving signal G n is not output.
当触控感测时段结束,内嵌式触控显示装置10再次操作于显示时段,第一补偿电路控制信号Reset1转换为一低电压电平,第一时脉信号CK恢复为逻辑高电位以使第n级移位寄存器121可继续输出第n级栅极驱动信号Gn,第二时脉信号XCK则为相对于第一时脉信号CK的逻辑低电位,驱动电路控制信号Qn会因为电容C2而被第n级栅极驱动信号Gn提升至高电压电平V2,如图7所示,因此内嵌式触控显示装置10继续正常更新显示画面。When the touch sensing period ends and the in-cell touch display device 10 operates in the display period again, the first compensation circuit control signal Reset1 is converted to a low voltage level, and the first clock signal CK is restored to a logic high level so that The nth stage shift register 121 can continue to output the nth stage gate driving signal Gn, the second clock signal XCK is at a logic low level relative to the first clock signal CK, and the driving circuit control signal Qn will be affected by the capacitance C2 is boosted to the high voltage level V 2 by the nth gate driving signal Gn, as shown in FIG. 7 , so the in-cell touch display device 10 continues to update the display screen normally.
以下更配合图示说明第一补偿电路1215不同实施例的操作方式。The operation modes of different embodiments of the first compensation circuit 1215 are described below with illustrations.
请先以图3A、图3B以及图8为例,当内嵌式触控显示装置10操作于上述的触控感测时段时,第一二极管D1正极端所耦接的第一补偿电路控制信号Reset1转换为一高电压电平,正极端与第一补偿电路控制信号Reset1电性耦接的第一二极管D1导通,又因为工艺关系目前的电子元件的电性无法理想化,第二二极管D2仍会有电流流经,因此在第一补偿电路控制信号Reset1高于目前驱动电路控制信号Qn的电压电平的情况下,第一补偿电路1215实施例一自然产生由其第一端往第二端流动的一第一电流来补偿驱动电路控制信号Qn。当内嵌式触控显示装置10结束触控感测时段并操作于上述的显示时段时,第一补偿电路控制信号Reset1转换为一低电压电平,因此驱动电路控制信号Qn的电压电平会高于第一补偿电路控制信号Reset1,此时第二二极管D2为导通,因为电子元件的电性无法理想化的因素第一二极管D1会有电流流经,因此第一补偿电路1215会产生由第二端往第一端流动的一第二电流,而为了减少驱动电路控制信号Qn在显示时段经由第一补偿电路1215漏电,第一补偿电路1215的第二二极管D2或者晶体管T2的尺寸可大于第一二极管D1或者晶体管T1,使第二电流小于上述的第一电流,并有效减少第二电流的电流量。Please take FIG. 3A, FIG. 3B and FIG. 8 as an example. When the in-cell touch display device 10 operates in the above-mentioned touch sensing period, the first compensation circuit coupled to the anode of the first diode D1 The control signal Reset1 is converted to a high voltage level, and the first diode D1 whose positive terminal is electrically coupled with the first compensation circuit control signal Reset1 is turned on, and the electrical properties of the current electronic components cannot be idealized due to technical problems. The second diode D2 still has current flowing through it. Therefore, when the first compensation circuit control signal Reset1 is higher than the voltage level of the current drive circuit control signal Qn, the first embodiment of the first compensation circuit 1215 is naturally generated by A first current flowing from the first terminal to the second terminal compensates the driving circuit control signal Q n . When the in-cell touch display device 10 ends the touch sensing period and operates in the above-mentioned display period, the first compensation circuit control signal Reset1 is converted to a low voltage level, so the voltage level of the driving circuit control signal Qn will be higher than the first compensation circuit control signal Reset1, at this time the second diode D2 is turned on, because the electrical properties of electronic components cannot be idealized, the first diode D1 will have current flowing through it, so the first compensation The circuit 1215 will generate a second current flowing from the second end to the first end, and in order to reduce the leakage of the driving circuit control signal Q n through the first compensation circuit 1215 during the display period, the second diode of the first compensation circuit 1215 The size of D2 or transistor T2 can be larger than that of the first diode D1 or transistor T1, so that the second current is smaller than the above-mentioned first current, and the current amount of the second current can be effectively reduced.
接着以图4A、图4B、图4C、图5A、图5B以及图8为例,首先,当内嵌式触控显示装置10操作于上述的显示时段且第n-1级栅极驱动信号Gn-1为逻辑高电位时,第一补偿电路控制信号Reset1为低电压电平,晶体管M10因为第n-1级栅极驱动信号Gn-1为逻辑高电位为开启,因此使得控制端与晶体管M10的第二端电性耦接的晶体管M8也开启,而由于当级的移位寄存器121尚未输出第n级栅极驱动信号Gn,因此晶体管M11为关闭,控制端电性耦接第一补偿电路控制信号Reset1的晶体管M9也为关闭。接着当内嵌式触控显示装置10操作于上述的触控感测时段时,第一补偿电路控制信号Reset1由低电压电平转换为一高电压电平,第n-1级栅极驱动信号Gn-1为逻辑低电位,晶体管M10以及晶体管M11因此为关闭,晶体管M8保持为开启,且由于此时第一补偿电路控制信号Reset1为高电压电平,又电容C3电性耦接于晶体管M8的第二端以及控制端之间,因此晶体管M8会因为电容C3将第一补偿电路控制信号Reset1的高电压电平补偿至晶体管M8的控制端而具有更佳的驱动能力。晶体管M9则因为第一补偿电路控制信号Reset1转换为一高电压电平而开启,因此此时第一补偿电路1215自然产生由其第一端往第二端流动的一第一电流来补偿驱动电路控制信号Qn。Next, take FIG. 4A, FIG. 4B, FIG. 4C, FIG. 5A, FIG. 5B, and FIG. 8 as examples. First, when the in-cell touch display device 10 operates in the above-mentioned display period and the n-1th level gate driving signal G When n-1 is a logic high potential, the first compensation circuit control signal Reset1 is a low voltage level, and the transistor M10 is turned on because the n-1th stage gate drive signal Gn -1 is a logic high potential, so that the control terminal and The transistor M8 electrically coupled to the second terminal of the transistor M10 is also turned on, and since the shift register 121 of the current stage has not yet output the gate driving signal G n of the nth stage, the transistor M11 is turned off, and the control terminal is electrically coupled to the first stage The transistor M9 of a compensation circuit control signal Reset1 is also turned off. Next, when the in-cell touch display device 10 operates in the above-mentioned touch sensing period, the first compensation circuit control signal Reset1 is converted from a low voltage level to a high voltage level, and the n-1th stage gate drive signal G n-1 is a logic low potential, the transistor M10 and the transistor M11 are therefore turned off, and the transistor M8 is kept on, and since the first compensation circuit control signal Reset1 is at a high voltage level at this time, the capacitor C3 is electrically coupled to the transistor Between the second terminal of M8 and the control terminal, the transistor M8 has better driving capability because the capacitor C3 compensates the high voltage level of the first compensation circuit control signal Reset1 to the control terminal of the transistor M8. The transistor M9 is turned on because the first compensation circuit control signal Reset1 is converted to a high voltage level, so at this time the first compensation circuit 1215 naturally generates a first current flowing from its first terminal to the second terminal to compensate the driving circuit control signal Q n .
当当前级的移位寄存器121输出第n级栅极驱动信号Gn,也就是内嵌式触控显示装置10又重新操作于上述的显示时段时,第一补偿电路控制信号Reset1转换为低电压电平,因此晶体管M9为关闭,晶体管M11因为第n级栅极驱动信号Gn而开启,将晶体管M8的控制端下拉至低电压电平,因此晶体管M8关闭,而此时由于驱动电路控制信号Qn的电压电平高于第一补偿电路控制信号Reset1的低电压电平,故因为电子元件无法理想化的因素,自然会产生由第一补偿电路1215的第二端往第一端流动的第二电流。其中由于第一时脉信号CK为逻辑高电位时第n级栅极驱动信号Gn也为逻辑高电位,触控感测时段时第一时脉信号CK为逻辑低电位,因此晶体管M11也可根据第一时脉信号CK的控制来关闭晶体管M8。此外,更可通过增加晶体管M12使晶体管M8的控制端可在正确的时段内维持于低电压电平,以避免晶体管M8在错误的时间开启,导致驱动电路控制信号Qn通过晶体管M15而大幅漏电。When the shift register 121 of the current stage outputs the gate driving signal Gn of the nth stage, that is, when the in-cell touch display device 10 is operating again in the above-mentioned display period, the first compensation circuit control signal Reset1 is converted to a low voltage level, so the transistor M9 is turned off, and the transistor M11 is turned on because of the gate drive signal Gn of the nth stage, and the control terminal of the transistor M8 is pulled down to a low voltage level, so the transistor M8 is turned off, and at this time due to the drive circuit control signal The voltage level of Q n is higher than the low voltage level of the first compensation circuit control signal Reset1, so due to the unidealization of electronic components, the flow from the second terminal to the first terminal of the first compensation circuit 1215 will naturally occur. second current. Wherein, since the first clock signal CK is at a logic high potential, the gate drive signal Gn of the nth stage is also at a logic high potential, and the first clock signal CK is at a logic low potential during the touch sensing period, so the transistor M11 can also be The transistor M8 is turned off according to the control of the first clock signal CK. In addition, by adding the transistor M12, the control terminal of the transistor M8 can be maintained at a low voltage level in the correct time period, so as to prevent the transistor M8 from being turned on at a wrong time, causing the driving circuit control signal Qn to leak a lot through the transistor M15 .
以下以图6A、图6B以及图8为例,来说明第一补偿电路1215的操作方式。首先以第一扫描信号U2D致能为例,也就是显示面板13的像素单元131由图1所示的L1列往Ln列的方向驱动为例来进行说明,当内嵌式触控显示装置10操作于上述的显示时段且第n-1级栅极驱动信号Gn-1为逻辑高电位时,晶体管M13为开启,因此晶体管M15也据以开启,而此时由于第一补偿电路控制信号Reset1为低电压电平,因此晶体管M16为关闭,此时并无电流由第一补偿电路1215的第一端往第二端流动。The operation of the first compensation circuit 1215 will be described below by taking FIG. 6A , FIG. 6B and FIG. 8 as examples. First, take the enabling of the first scanning signal U2D as an example, that is, the pixel unit 131 of the display panel 13 is driven from the L1 column to the Ln column shown in FIG. When the device 10 is operating in the above-mentioned display period and the gate drive signal Gn -1 of the n-1th level is logic high potential, the transistor M13 is turned on, so the transistor M15 is also turned on accordingly, and at this time due to the control of the first compensation circuit The signal Reset1 is at a low voltage level, so the transistor M16 is turned off, and no current flows from the first terminal to the second terminal of the first compensation circuit 1215 at this time.
接着当内嵌式触控显示装置10操作于上述的触控感测时段时,第一补偿电路控制信号Reset1为高电压电平,第n-1级栅极驱动信号Gn-1为逻辑低电位,因此晶体管M13为关闭,但此时晶体管M15仍为开启,因此可将晶体管M15第一端所耦接的第一补偿电路控制信号Reset1传送至晶体管M16的第一端,晶体管M15更因为电容C4将第一补偿电路控制信号Reset1的高电压电平补偿至晶体管M15的控制端而具有更佳的驱动能力,又此时晶体管M16因为第一补偿电路控制信号Reset1而开启,第一补偿电路控制信号Reset1的高电压电平高于驱动电路控制信号Qn的电压电平,因此此时第一补偿电路1215产生由其第一端往第二端流动的第一电流。Next, when the in-cell touch display device 10 operates in the above-mentioned touch sensing period, the first compensation circuit control signal Reset1 is at a high voltage level, and the n-1th stage gate driving signal Gn -1 is logic low. Potential, so the transistor M13 is off, but the transistor M15 is still on at this time, so the first compensation circuit control signal Reset1 coupled to the first end of the transistor M15 can be transmitted to the first end of the transistor M16, and the transistor M15 is more due to the capacitance C4 compensates the high voltage level of the first compensation circuit control signal Reset1 to the control terminal of the transistor M15 to have a better driving capability. At this time, the transistor M16 is turned on because of the first compensation circuit control signal Reset1, and the first compensation circuit controls The high voltage level of the signal Reset1 is higher than the voltage level of the driving circuit control signal Qn, so the first compensation circuit 1215 generates a first current flowing from the first terminal to the second terminal at this time.
当当前级的移位寄存器121输出第n级栅极驱动信号Gn,也就是内嵌式触控显示装置10又重新操作于上述的显示时段时,第一补偿电路控制信号Reset1转换为低电压电平,因此晶体管M16为关闭,由于此时驱动电路控制信号Qn的电压电平高于第一补偿电路控制信号Reset1的低电压电平,故产生由第一补偿电路1215的第二端往第一端流动的第二电流。而当第n+1级栅极驱动信号Gn+1为逻辑高电压时,晶体管M14开启,此时由于第二扫描信号D2U为禁能,例如为逻辑低电位,因此晶体管M15的控制端被重置为逻辑低电位,晶体管M15为关闭。在其他实施例中,更可通过晶体管M17以及晶体管M18关闭晶体管M15,避免晶体管M15在错误的时间继续开启,导致驱动电路控制信号Qn通过晶体管M15而大幅漏电,如图6B所示。此外,当第一扫描信号U2D为禁能,第二扫描信号D2U保持为致能,显示面板13的像素单元131由图1所示的Ln列往L1列的方向驱动时,晶体管M15则通过上一级的第n+1级栅极驱动信号Gn+1来开启。When the shift register 121 of the current stage outputs the gate driving signal Gn of the nth stage, that is, when the in-cell touch display device 10 is operating again in the above-mentioned display period, the first compensation circuit control signal Reset1 is converted to a low voltage level, so the transistor M16 is turned off. Since the voltage level of the drive circuit control signal Qn is higher than the low voltage level of the first compensation circuit control signal Reset1 at this time, the second end of the first compensation circuit 1215 generates The second current flowing through the first terminal. And when the gate drive signal Gn +1 of the n+1th stage is logic high voltage, the transistor M14 is turned on. At this time, because the second scan signal D2U is disabled, for example, it is logic low potential, so the control terminal of the transistor M15 is turned on. Reset to logic low level, transistor M15 is off. In other embodiments, the transistor M15 can be turned off through the transistor M17 and the transistor M18, so as to prevent the transistor M15 from continuing to be turned on at a wrong time, resulting in a large leakage of the driving circuit control signal Q n through the transistor M15, as shown in FIG. 6B . In addition, when the first scanning signal U2D is disabled, the second scanning signal D2U is kept enabled, and the pixel unit 131 of the display panel 13 is driven from the L n column to the L 1 column shown in FIG. 1 , the transistor M15 is It is turned on by the n+1th stage gate driving signal Gn +1 of the previous stage.
根据上述的内容,由于图4A、图4B以及图4C中的晶体管M8,图6A以及图6B中的晶体管M15都是在接收到前一级的栅极驱动信号,例如为第n-1级栅极驱动信号Gn-1或第n+1级栅极驱动信号Gn+1才会开启,因此当该级的移位寄存器并非需要补偿驱动电路控制信号Qn移位寄存器时晶体管M8或晶体管M15并不会开启,因此不会受到第一补偿电路控制信号Reset1为高电压电平的影响,且通过图4A、图4B、图4C、图6A以及图6B的电路架构更使得第一补偿电路1215具有更低的第二电流,有效提高第一电流与第二电流的比率,避免驱动电路控制信号Qn因为漏电流过大而导致移位寄存器121输出能力下降。According to the above content, since the transistor M8 in FIG. 4A, FIG. 4B and FIG. 4C, the transistor M15 in FIG. 6A and FIG. The pole drive signal G n-1 or the gate drive signal G n+1 of the n+1th stage will be turned on, so when the shift register of this stage does not need to compensate the drive circuit control signal Q n shift register, the transistor M8 or transistor M15 will not be turned on, so it will not be affected by the high voltage level of the first compensation circuit control signal Reset1, and through the circuit structure of Figure 4A, Figure 4B, Figure 4C, Figure 6A and Figure 6B, the first compensation circuit 1215 has a lower second current, effectively increasing the ratio of the first current to the second current, and preventing the output capability of the shift register 121 from being reduced due to excessive leakage current of the drive circuit control signal Qn .
请参考图9,图9为本发明的移位寄存器121的另一实施例,图9与图2的差异在于,图9包括了一第二补偿电路1216,其第一端与第二补偿电路控制信号Reset2电性耦接,其第二端与驱动电路控制信号Qn电性耦接,第一补偿电路1215以及第二补偿电路1216可以在不同时间交换运作,例如以一帧(Frame)为例,第一补偿电路1215以及第二补偿电路1216在不同帧交换运作。Please refer to FIG. 9. FIG. 9 is another embodiment of the shift register 121 of the present invention. The difference between FIG. 9 and FIG. The control signal Reset2 is electrically coupled, and its second end is electrically coupled to the drive circuit control signal Qn. The first compensation circuit 1215 and the second compensation circuit 1216 can operate at different times, for example, a frame (Frame) For example, the first compensation circuit 1215 and the second compensation circuit 1216 operate alternately in different frames.
根据上述的内容,更汇整出一移位寄存器电路的操作方法实施例,请参考图10,其步骤包括:于上述的触控感测时段,即图8的时段TS时,第n级移位寄存器121的第n级栅极驱动信号为禁能,第一补偿电路控制信号Reset1为上述的高电压电平,且第一补偿电路1215的第一端的电位大于第一补偿电路1215的第二端的电位,第一补偿电路1215产生由第一端往第二端流动的第一电流以补偿驱动电路控制信号Qn(步骤101)。According to the above content, an embodiment of the operation method of a shift register circuit is further compiled , please refer to FIG. The gate drive signal of the nth stage of the shift register 121 is disabled, the first compensation circuit control signal Reset1 is at the above-mentioned high voltage level, and the potential of the first terminal of the first compensation circuit 1215 is greater than that of the first compensation circuit 1215 The potential of the second terminal, the first compensation circuit 1215 generates a first current flowing from the first terminal to the second terminal to compensate the driving circuit control signal Q n (step 101 ).
在其他实施例中,移位寄存器电路的操作方法还包括于上述的显示时段,即图8的时段TD时,第n级栅极驱动信号于显示时段被致能,第一补偿电路控制信号Reset1为低电压电平,第一补偿电路1215的第二端的电位大于第一补偿电路1215的第一端的电位,第一补偿电路1215产生由第二端往第一端流动的一第二电流,其中,第二电流可小于第一电流,以减少驱动电路控制信号Qn在显示时段经由第一补偿电路1215漏电的情况(步骤102),如图11所示。In other embodiments, the operation method of the shift register circuit further includes that during the above-mentioned display period, that is, during the period TD in FIG. Reset1 is a low voltage level, the potential of the second terminal of the first compensation circuit 1215 is greater than the potential of the first terminal of the first compensation circuit 1215, and the first compensation circuit 1215 generates a second current flowing from the second terminal to the first terminal , wherein the second current may be smaller than the first current to reduce the leakage of the driving circuit control signal Q n through the first compensation circuit 1215 during the display period (step 102 ), as shown in FIG. 11 .
综以上所述,本发明所提出的移位寄存器电路实施例因具有上述的补偿电路,因此第n级移位寄存器电路121在触控感测时段时,可利用第一补偿电路1215所产生的电流来补偿驱动电路控制信号Qn,故当触控感测时段结束,第n级移位寄存器电路121的驱动电路控制信号Qn仍与触控感测时段前的驱动电路控制信号Qn,例如第n-1级移位寄存器电路121的驱动电路控制信号Qn-1具有相同的驱动能力,避免因为驱动电路控制信号Qn的驱动能力下降而发生显示画面出现横纹的情况。To sum up, the shift register circuit embodiment proposed by the present invention has the above-mentioned compensation circuit, so the shift register circuit 121 of the nth stage can utilize the output generated by the first compensation circuit 1215 during the touch sensing period. current to compensate the driving circuit control signal Q n , so when the touch sensing period ends, the driving circuit control signal Q n of the nth shift register circuit 121 is still the same as the driving circuit control signal Q n before the touch sensing period, For example, the driving circuit control signal Qn -1 of the n -1th shift register circuit 121 has the same driving capability, so as to avoid horizontal stripes on the display screen due to the decrease of the driving capability of the driving circuit control signal Qn.
虽然本发明已以实施例公开如上,然其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围内,当可做些许的变动与润饰,因此本发明的保护范围当视所付的权利要求所界定者为准。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall prevail as defined by the paid claims.
Claims (13)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104121553 | 2015-07-02 | ||
TW104121553 | 2015-07-02 | ||
TW104132452 | 2015-10-01 | ||
TW104132452A TWI559279B (en) | 2015-07-02 | 2015-10-01 | Shift register circuit and method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105280134A true CN105280134A (en) | 2016-01-27 |
CN105280134B CN105280134B (en) | 2018-11-23 |
Family
ID=55149038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510725407.5A Active CN105280134B (en) | 2015-07-02 | 2015-10-30 | Shift register circuit and operation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105280134B (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105869565A (en) * | 2016-02-26 | 2016-08-17 | 友达光电股份有限公司 | Gate drive circuit |
CN106024065A (en) * | 2016-05-18 | 2016-10-12 | 上海天马微电子有限公司 | Shifting register, grid driving circuit, array substrate and display device |
CN106297888A (en) * | 2016-07-06 | 2017-01-04 | 友达光电股份有限公司 | Shift temporary storage device |
CN106951123A (en) * | 2017-03-21 | 2017-07-14 | 京东方科技集团股份有限公司 | Touch-control driver element and its driving method, touch drive circuit, display device |
CN107146584A (en) * | 2017-05-05 | 2017-09-08 | 惠科股份有限公司 | Shift register circuit, waveform generation method thereof and display panel applying same |
CN107274855A (en) * | 2017-06-27 | 2017-10-20 | 友达光电股份有限公司 | Gate drive circuit and drive method thereof |
WO2018040389A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳市华星光电技术有限公司 | Gate drive circuit |
CN105845092B (en) * | 2016-03-23 | 2018-09-07 | 友达光电股份有限公司 | Shift register and sensing display device thereof |
CN109213357A (en) * | 2017-07-07 | 2019-01-15 | 敦泰电子有限公司 | The driving method of embedded type touch control display panel and the embedded type touch control display for using it |
WO2019127768A1 (en) * | 2017-12-26 | 2019-07-04 | 惠科股份有限公司 | Shift temporary storage circuit and display panel |
CN110164360A (en) * | 2018-06-14 | 2019-08-23 | 友达光电股份有限公司 | Gate drive apparatus |
CN110164381A (en) * | 2018-06-14 | 2019-08-23 | 友达光电股份有限公司 | Gate drive apparatus |
EP3564941A4 (en) * | 2016-12-27 | 2020-07-15 | Wuhan China Star Optoelectronics Technology Co., Ltd. | GOA SWITCHING |
CN111508402A (en) * | 2019-01-30 | 2020-08-07 | 瀚宇彩晶股份有限公司 | A gate drive circuit and touch display device |
CN111813250A (en) * | 2019-04-12 | 2020-10-23 | 敦泰电子有限公司 | Driving method of touch display panel and driving circuit of touch display panel |
US11004416B2 (en) | 2017-12-26 | 2021-05-11 | HKC Corporation Limited | Shift register circuit and display panel using the same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100188385A1 (en) * | 2007-07-24 | 2010-07-29 | Koninklijke Philips Electronics N.V. | Shift register circuit having threshold voltage compensation |
US20110096027A1 (en) * | 2009-10-22 | 2011-04-28 | Jeon Mu-Kyung | Sensor scan drivers, flat panel displays with built-in touch screen including such a sensor scan driver, and methods of driving such flat panel displays |
CN103943055A (en) * | 2014-03-27 | 2014-07-23 | 京东方科技集团股份有限公司 | Gate drive circuit and method and display device |
CN103996370A (en) * | 2014-05-30 | 2014-08-20 | 京东方科技集团股份有限公司 | Shifting register unit, grid drive circuit, display device and drive method |
CN104021769A (en) * | 2014-05-30 | 2014-09-03 | 京东方科技集团股份有限公司 | Shifting register, grid integration drive circuit and display screen |
CN104318885A (en) * | 2014-10-29 | 2015-01-28 | 京东方科技集团股份有限公司 | Touch display screen and time-sharing drive method thereof |
CN104503632A (en) * | 2015-01-26 | 2015-04-08 | 京东方科技集团股份有限公司 | Buffer unit, touch drive circuit, display device and drive method of display device |
-
2015
- 2015-10-30 CN CN201510725407.5A patent/CN105280134B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100188385A1 (en) * | 2007-07-24 | 2010-07-29 | Koninklijke Philips Electronics N.V. | Shift register circuit having threshold voltage compensation |
US20110096027A1 (en) * | 2009-10-22 | 2011-04-28 | Jeon Mu-Kyung | Sensor scan drivers, flat panel displays with built-in touch screen including such a sensor scan driver, and methods of driving such flat panel displays |
CN103943055A (en) * | 2014-03-27 | 2014-07-23 | 京东方科技集团股份有限公司 | Gate drive circuit and method and display device |
CN103996370A (en) * | 2014-05-30 | 2014-08-20 | 京东方科技集团股份有限公司 | Shifting register unit, grid drive circuit, display device and drive method |
CN104021769A (en) * | 2014-05-30 | 2014-09-03 | 京东方科技集团股份有限公司 | Shifting register, grid integration drive circuit and display screen |
CN104318885A (en) * | 2014-10-29 | 2015-01-28 | 京东方科技集团股份有限公司 | Touch display screen and time-sharing drive method thereof |
CN104503632A (en) * | 2015-01-26 | 2015-04-08 | 京东方科技集团股份有限公司 | Buffer unit, touch drive circuit, display device and drive method of display device |
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105869565B (en) * | 2016-02-26 | 2019-01-04 | 友达光电股份有限公司 | gate drive circuit |
CN105869565A (en) * | 2016-02-26 | 2016-08-17 | 友达光电股份有限公司 | Gate drive circuit |
CN105845092B (en) * | 2016-03-23 | 2018-09-07 | 友达光电股份有限公司 | Shift register and sensing display device thereof |
CN106024065A (en) * | 2016-05-18 | 2016-10-12 | 上海天马微电子有限公司 | Shifting register, grid driving circuit, array substrate and display device |
CN106024065B (en) * | 2016-05-18 | 2019-12-17 | 上海天马微电子有限公司 | Shifting register, grid driving circuit, array substrate and display device |
CN106297888A (en) * | 2016-07-06 | 2017-01-04 | 友达光电股份有限公司 | Shift temporary storage device |
CN106297888B (en) * | 2016-07-06 | 2019-11-08 | 友达光电股份有限公司 | Shift temporary storage device |
WO2018040389A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳市华星光电技术有限公司 | Gate drive circuit |
US10453410B2 (en) | 2016-08-31 | 2019-10-22 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Gate driving circuit |
EP3564941A4 (en) * | 2016-12-27 | 2020-07-15 | Wuhan China Star Optoelectronics Technology Co., Ltd. | GOA SWITCHING |
CN106951123B (en) * | 2017-03-21 | 2019-08-20 | 京东方科技集团股份有限公司 | Touch driving unit and driving method thereof, touch driving circuit, display device |
CN106951123A (en) * | 2017-03-21 | 2017-07-14 | 京东方科技集团股份有限公司 | Touch-control driver element and its driving method, touch drive circuit, display device |
CN107146584B (en) * | 2017-05-05 | 2019-10-11 | 惠科股份有限公司 | Shift register circuit, waveform generation method thereof and display panel applying same |
CN107146584A (en) * | 2017-05-05 | 2017-09-08 | 惠科股份有限公司 | Shift register circuit, waveform generation method thereof and display panel applying same |
CN107274855A (en) * | 2017-06-27 | 2017-10-20 | 友达光电股份有限公司 | Gate drive circuit and drive method thereof |
CN107274855B (en) * | 2017-06-27 | 2019-10-18 | 友达光电股份有限公司 | Gate drive circuit and drive method thereof |
CN109213357A (en) * | 2017-07-07 | 2019-01-15 | 敦泰电子有限公司 | The driving method of embedded type touch control display panel and the embedded type touch control display for using it |
CN114721549A (en) * | 2017-07-07 | 2022-07-08 | 敦泰电子有限公司 | Driving method of embedded touch display panel and embedded touch display using same |
US11004416B2 (en) | 2017-12-26 | 2021-05-11 | HKC Corporation Limited | Shift register circuit and display panel using the same |
WO2019127768A1 (en) * | 2017-12-26 | 2019-07-04 | 惠科股份有限公司 | Shift temporary storage circuit and display panel |
CN110164360A (en) * | 2018-06-14 | 2019-08-23 | 友达光电股份有限公司 | Gate drive apparatus |
CN110164360B (en) * | 2018-06-14 | 2022-02-11 | 友达光电股份有限公司 | Gate driving device |
CN110164381A (en) * | 2018-06-14 | 2019-08-23 | 友达光电股份有限公司 | Gate drive apparatus |
CN111508402A (en) * | 2019-01-30 | 2020-08-07 | 瀚宇彩晶股份有限公司 | A gate drive circuit and touch display device |
CN111508402B (en) * | 2019-01-30 | 2023-08-01 | 瀚宇彩晶股份有限公司 | Gate drive circuit and touch display device |
CN111813250A (en) * | 2019-04-12 | 2020-10-23 | 敦泰电子有限公司 | Driving method of touch display panel and driving circuit of touch display panel |
CN111813250B (en) * | 2019-04-12 | 2023-11-17 | 敦泰电子有限公司 | Driving method of touch display panel and driving circuit of touch display panel |
Also Published As
Publication number | Publication date |
---|---|
CN105280134B (en) | 2018-11-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105280134B (en) | Shift register circuit and operation method thereof | |
US10930239B2 (en) | Gate driving circuit and display apparatus using the same | |
US10210791B2 (en) | Shift register unit, driving method, gate driver on array and display device | |
CN108766380B (en) | GOA circuit | |
US9501989B2 (en) | Gate driver for narrow bezel LCD | |
KR101622896B1 (en) | Display device and drive method thereof | |
US9311881B2 (en) | Liquid crystal display device and drive method for same | |
CN103117091B (en) | Shift buffer and driving method thereof | |
US20180211606A1 (en) | Shift register circuit and driving method therefor, gate line driving circuit and array substrate | |
US9478171B2 (en) | Display device and method for operating the display device | |
KR101678214B1 (en) | Shift register and display device using the same | |
WO2017117849A1 (en) | Goa drive circuit | |
US10698526B2 (en) | Compensation circuit, gate driving unit, gate driving circuit, driving methods thereof and display device | |
US10725579B2 (en) | Compensation circuit, gate driving unit, gate driving circuit, driving methods thereof and display device | |
US20180122322A1 (en) | Gate driver and display device using the same | |
CN106935168B (en) | Shift register and display device | |
KR20100048103A (en) | Method for driving gate line, gate driving circuit performing for the method and display apparatus having the gate driving circuit | |
US10748465B2 (en) | Gate drive circuit, display device and method for driving gate drive circuit | |
KR20080048686A (en) | LCD and its driving method | |
TWI556221B (en) | Electrostatic discharging gate driver circuit and electrostatic discharging gate driving method | |
TWI559279B (en) | Shift register circuit and method thereof | |
US20170047018A1 (en) | Gate driving unit and display device including the same | |
CN104332182B (en) | shift register device | |
US9117512B2 (en) | Gate shift register and flat panel display using the same | |
KR102135928B1 (en) | A shift register and method for manufacturing the same, and an image display device using the shift register |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |