CN105158836B - A kind of terahertz polarization piece based on double-level-metal wire grid construction - Google Patents
A kind of terahertz polarization piece based on double-level-metal wire grid construction Download PDFInfo
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- CN105158836B CN105158836B CN201510646141.5A CN201510646141A CN105158836B CN 105158836 B CN105158836 B CN 105158836B CN 201510646141 A CN201510646141 A CN 201510646141A CN 105158836 B CN105158836 B CN 105158836B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
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Abstract
本发明公开了一种基于双层金属线栅结构的太赫兹偏振片，包括硅基底1，硅基底上下表面的氮化硅层2，将所述氮化硅层2加工成在同一平面相互平行呈周期性排列的凸起3，在凸起3之间的硅基底上加工形成相互平行的凹槽4，在凸起3表面和凹槽4内部底面生成有线栅结构的金属薄膜5。本发明公开的偏振片横磁场波具有较高的透过率，消光比非常高，由于是双面对称结构，使用时没有方向区别，另外，本发明制作时上下刻蚀的凹槽无需对齐，只需上下平行，因此本发明还具有加工工艺简单，加工周期较短等优点。
The invention discloses a terahertz polarizer based on a double-layer metal wire grid structure, which includes a silicon substrate 1, a silicon nitride layer 2 on the upper and lower surfaces of the silicon substrate, and the silicon nitride layer 2 is processed to be parallel to each other on the same plane Protrusions 3 arranged periodically are processed to form grooves 4 parallel to each other on the silicon substrate between the protrusions 3 , and a metal thin film 5 with a wire grid structure is formed on the surface of the protrusions 3 and the inner bottom surface of the grooves 4 . The transverse magnetic field wave of the polarizer disclosed by the present invention has high transmittance, and the extinction ratio is very high. Since it is a double-sided symmetrical structure, there is no difference in direction when used. In addition, the grooves etched up and down do not need to be aligned when making the present invention. It only needs to be parallel up and down, so the present invention also has the advantages of simple processing technology and short processing cycle.
Description
Technical field
The present invention relates to a kind of terahertz polarization piece field, and in particular to a kind of terahertz based on double-level-metal wire grid construction
Hereby polarizer.
Background technology
THz wave refer to frequency between the Terahertz of 0.1 Terahertz -10, wavelength be located at 3 millimeter of -30 micrometer range in
Electromagnetic wave.It can penetrate such as clothing, rubber, ceramics, wood, plastics, and its photon energy is extremely low, can answer extensively
For communicating, radar, imaging, the field such as medical science.
Polarizer is important optical element in the systems such as optical Information Processing, optical measurement, optic communication, therefore extensive
It is applied to the fields such as fiber optic communication, liquid crystal display, optical projection, Photoelectric Detection.Wherein extinction ratio is to weigh polarizer performance
Major parameter, is defined as 10 × log10 (TTM/TTE), extinction ratio is higher, and polarizer performance is more excellent, wherein TTMAnd TTERepresent respectively
Wire-grid polarizer TM and TE polarized wave transmissivity.Most common polarizer can be divided into three kinds in terahertz wave band field：The
One kind is liquid crystal polarizer, and second is Brewster angle polarizer, and the third is wire grating polarizer.It is most widely used
The specific good polarization property of liquid crystal polarizer, but operating frequency range is narrower, complex structure, high cost, and its application is subject to
Limitation.Brewster angle polarizer there is also that applicable wavelengths are narrow, extinction ratio shortcoming not high.Traditional terahertz wave band polarization
Device is that, without support metallic wire grid polarizer, due to no base material, loss is very low, is widely used in terahertz wave band, but
Cycle unification, the processing of spacing uniform bending metals cable architecture difficulty of getting up are very big, and fragile structure, extinction ratio are relatively low.
2009, Yamada et al. machined the aluminum metal wire-grid polarizer that the cycle is 3 μm using micro-processing method on a silicon substrate,
Extinction ratio is better than 23dB in the range of 0.5~3.0THz, but high-k the Fresnel reflection that causes of silicon substrate material, make
Its loss is higher.It is inclined that the same year Yong Ma et al. machined on high-density polyethylene material Terahertz wiregrating using photoetching process
Shake device, realizes relatively low loss, but to improve extinction ratio it is necessary to the smaller wire grid construction of manufacturing cycle, and this is accomplished by adopting
With cost is higher, difficulty is bigger nano print and processing technology, the technique exists and is difficult to prepare terahertz wave band large scale line
The shortcoming of grid polarizer.2010, LinSun et al. proposed the polarizer that High Extinction Ratio is realized using double-deck wiregrating in theory
Structure design.2012, Deng et al. machined double-deck golden wire-grid polarizer on a silicon substrate, inclined compared to conventional monolayers wiregrating
Shaken device, and extinction ratio is increased substantially.But several wire-grid polarizers still have structure excessively complicated, delustring above
Than problem not fully up to expectations.In view of this, a kind of preparation process is simple is found, extinction ratio terahertz polarization piece high is ability
The problem of domain urgent need to resolve.
The content of the invention
In view of this, it is an object of the invention to provide a kind of terahertz polarization piece based on double-level-metal wire grid construction.
To reach above-mentioned purpose, the present invention provides following technical scheme：
A kind of terahertz polarization piece based on double-level-metal wire grid construction, including silicon base 1, the nitrogen of silicon base upper and lower surface
SiClx layer 2, the silicon nitride layer 2 is processed into raised 3 be parallel to each other on the same plane in periodic arrangement, raised 3 it
Between silicon base on process and form the groove 4 that is parallel to each other, have wire grid construction on raised 3 surface and the generation of the inner bottom surface of groove 4
Metallic film 5.
Preferably, alignd and groove 4 between the projection 3 that upper and lower surface is formed.
Preferably, the silicon base 1 is the thick intrinsic high resistant silicon chips of twin polishing of 500um~600um, the silicon nitride layer
2 thickness are 200~300nm, and raised 3 thickness is consistent with silicon nitride layer, 2~3um of the groove bottom width, deep 1~3um, institute
It is 4um to state the spacing between groove.
Preferably, raised 3 side is trapezoidal, can so prevent recess sidewall to be coated with golden film.
Preferably, the side of the groove 4 is processed into concave profile or the plane of acute angle is formed with ground.
Preferably, the one kind in the film that the metallic film is formed by the material of aluminium, gold, silver, copper.
Preferably, the metallic film is the film that gold is formed, and thickness is 100nm~200nm.
Preferably, in the range of 0.5-2.0 Terahertz, the transmitance of transverse electric field wave is the scope of application of the polarizer
10-3—10-4, the transmitance averagely about 0.46 of transverse magnetic field wave, extinction ratio is 60dB or so.
The beneficial effects of the present invention are：Polarizer transverse magnetic field wave disclosed by the invention has transmitance higher, delustring
Than very high, there is no direction to distinguish due to being double-sided symmetrical structure, when using.In addition, what is etched up and down during present invention making is recessed
Groove, only need to be parallel up and down without alignment, therefore the present invention also has the advantages of processing technology is simple, and the process-cycle is shorter.
Brief description of the drawings
In order that the purpose of the present invention, technical scheme and beneficial effect are clearer, the present invention provides drawings described below and carries out
Explanation：
Fig. 1 is the polarizer side cutaway view prepared by embodiment 1；
Fig. 2 is the polarizer macroscopic view overall diagram prepared by embodiment 1；
Fig. 3 is the curve map of the extinction ratio with frequency relation of the polarizer prepared by embodiment 1；
Fig. 4 is the polarizer side cutaway view prepared by embodiment 2.
Specific embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
Embodiment 1
Polarizer side cutaway view prepared by the present embodiment is as shown in figure 1, the polarizer of the present embodiment includes that 500um is thick
The intrinsic high resistant silicon chip (100) 1 of twin polishing, the resistivity of silicon chip is more than 10000 Ω, and silicon chip surface is carried out using PECVD
Nitrogen treatment, the thickness of nitration case is about 200nm.
Then chemical wet etching technology is utilized, the surfaces nitrided silicon nitride layer 2 of wherein one side is processed into phase on the same plane
Mutually parallel in raised the 3 of periodic arrangement, raised 3 side is presented bottom and is less than the trapezoidal of bottom, and etching gas select SF6.
Then the groove 4 for being formed and being parallel to each other, retention surface nitrogen are processed in the silicon base using the method for wet etching between raised 3
The shape of SiClx, groove bottom width 2um, deep 1um, the spacing between the groove is 4um, and concave profile is processed into the side of groove 4,
Corrosive liquid used is HF:HNO3=1:99 (volume ratios), etching time is about 2-3 minutes.Using backside alignment techniques, will be another
Simultaneously etch the corresponding symmetrical shape with raised 3 and groove 4.Then gold is deposited with raised 3 table using evaporation coating
Face and the generation of the inner bottom surface of groove 4 have the metallic film 5 of wire grid construction, and thickness 100nm forms Fig. 1 structures, and Fig. 2 is overall diagram.
The quality of polarizer can represent with extinction ratio,Wherein,
TransmittanceTMThe linear polarization terahertz light transmitance vertical with metal stripe direction is represented,
TransmittanceTERepresent the linear polarization terahertz light transmitance parallel with metal stripe direction.Experimental verification, metal
Grating thickness is thicker, and etched recesses depth is deeper, and polarizer extinction ratio is bigger.Etching depth 1um, metal grating are used in this example
The parameter of thickness 100nm, it is averagely about 60dB, reaches as high as 87dB, as shown in Figure 3 in terahertz wave band extinction ratio.
Embodiment 2
Polarizer side cutaway view prepared by the present embodiment is as shown in figure 4, the polarizer of the present embodiment includes that 600um is thick
The intrinsic high resistant silicon chip (100) 1 of twin polishing, the resistivity of silicon chip is more than 10000 Ω, and silicon chip surface is carried out using PECVD
Nitrogen treatment, the thickness of nitration case is about 300nm.
Then chemical wet etching technology is utilized, the surfaces nitrided silicon nitride layer 2 of wherein one side is processed into phase on the same plane
Mutually parallel in raised the 3 of periodic arrangement, raised 3 side is presented bottom and is more than the trapezoidal of bottom, and etching gas select SF6.
Then the groove 4 for being formed and being parallel to each other, retention surface nitrogen are processed in the silicon base using the method for wet etching between raised 3
The shape of SiClx, groove bottom width 2um, deep 1um, the spacing between the groove is 4um, and the side of groove 4 is processed into and ground shape
Plane at an acute angle, corrosive liquid used is HF:HNO3=1:99 (volume ratios), etching time is about 2-3 minutes.Using the back side
Technique of alignment, the corresponding symmetrical shape with raised 3 and groove 4 is etched by another side.Then evaporation coating is utilized by gold
It is deposited with raised 3 and the inner bottom surface of groove 4 generates the metallic film 5 for having wire grid construction, thickness 200nm.
Terahertz polarization piece of the invention can be seen that by above example, be fabricated to as shown in the figure using surfaces nitrided silicon
Structure, can allow perpendicular to metal grating direction THz wave pass through, reflected parallel is in the THz wave in metal grating direction.
Low manufacture cost of the present invention, technological process is simple, and the making that can maximize, and has good application prospect.
Finally illustrate, preferred embodiment above is merely illustrative of the technical solution of the present invention and unrestricted, although logical
Cross above preferred embodiment to be described in detail the present invention, it is to be understood by those skilled in the art that can be
Various changes are made to it in form and in details, without departing from claims of the present invention limited range.
Claims (6)
1. a kind of terahertz polarization piece based on double-level-metal wire grid construction, including silicon base（1）, the nitrogen of silicon base upper and lower surface
SiClx layer（2）, it is characterised in that by the silicon nitride layer（2）It is processed into and be parallel to each other on the same plane in periodic arrangement
It is raised（3）, in projection（3）Between silicon base on process and form the groove that is parallel to each other（4）, in projection（3）Surface and groove
（4）Inner bottom surface generation has the metallic film of wire grid construction（5）；The silicon base（1）It is the thick twin polishings of 500um ~ 600um
Intrinsic high resistant silicon chip, the silicon nitride layer（2）Thickness is 200 ~ 300nm, the projection（3）Thickness is consistent with silicon nitride layer, institute
Groove 2 ~ 3um of bottom width is stated, deep 1 ~ 3um, the spacing between the groove is 4um.
2. a kind of terahertz polarization piece based on double-level-metal wire grid construction according to claim 1, it is characterised in that up and down
The projection that surface is formed（3）Between and groove（4）Between align.
3. a kind of terahertz polarization piece based on double-level-metal wire grid construction according to claim 1, it is characterised in that described
It is raised（3）Side is trapezoidal.
4. a kind of terahertz polarization piece based on double-level-metal wire grid construction according to claim 1, it is characterised in that described
Groove（4）It is processed into concave profile or the plane of acute angle is formed with ground in side.
5. a kind of terahertz polarization piece based on double-level-metal wire grid construction according to claim 1, it is characterised in that described
One kind in the film that metallic film is formed by the material of aluminium, gold, silver, copper.
6. a kind of terahertz polarization piece based on double-level-metal wire grid construction according to claim 1, it is characterised in that described
Metallic film is the film that gold is formed, and thickness is 100 ~ 200nm.
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| CN201510646141.5A CN105158836B (en) | 2015-10-08 | 2015-10-08 | A kind of terahertz polarization piece based on double-level-metal wire grid construction |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107290815A (en) * | 2016-03-31 | 2017-10-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Wire grid construction and its manufacture device |
| TWI641878B (en) * | 2017-09-22 | 2018-11-21 | 友達光電股份有限公司 | Wire grid polarizer and display panel using the same |
| JP7226936B2 (en) * | 2018-07-26 | 2023-02-21 | デクセリアルズ株式会社 | Polarizing plate and optical equipment |
| CN113528343B (en) * | 2021-07-19 | 2022-08-02 | 中国科学院重庆绿色智能技术研究院 | An adherent cell culturer for terahertz wave irradiation |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2006313140A (en) * | 2005-05-07 | 2006-11-16 | Junichi Nishizawa | Terahertz wave generating apparatus and method or spectroscopic measurement apparatus and method |
| CN101923185A (en) * | 2010-08-17 | 2010-12-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | A terahertz wave quasi-optical polarizer and its preparation method |
| CN203881966U (en) * | 2014-05-19 | 2014-10-15 | 中国计量学院 | Double-layer wire grating polarizer |
| CN104536075B (en) * | 2015-01-19 | 2017-01-18 | 中国科学院重庆绿色智能技术研究院 | Terahertz polaroid |
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