CN105140375A - Substrate and Light Emitting Diode Device - Google Patents

Abstract

The present invention provides a substrate and a light-emitting diode device. The substrate includes a substrate, a metal reflective layer and an anti-oxidation layer. The substrate has a first surface and a second surface opposite to each other. The metal reflective layer is disposed on the first surface of the substrate. The anti-oxidation layer covers the metal reflective layer. The metal reflective layer is located between the anti-oxidation layer and the first surface of the substrate. At least one light-emitting diode chip is suitable for eutectic bonding on the substrate. A light-emitting diode device is also proposed, which includes the above-mentioned substrate and the light-emitting diode chip disposed on the substrate, and has a good yield in a high-temperature process.

Description

Substrate and Light Emitting Diode Device

The present invention is a divisional application of the invention patent application with the application number 201110295442.X and the invention title "Substrate" filed on September 29, 2011.

technical field

The invention relates to a substrate, in particular to a substrate suitable for eutectic bonding with a light emitting diode chip and a light emitting diode device.

Background technique

Today, with the rising awareness of environmental protection, in addition to actively looking for renewable energy, people are also constantly investing in the development of energy-saving products. Taking lighting products as an example, an energy-saving and environment-friendly light source, that is, a light emitting diode (LED) chip, has been developed. LED chips emit light by recombining electrons and holes in the P-N junction. Compared with traditional light sources, LED chips have the advantages of low power consumption and long life, and thus have been widely used in various fields.

The light-emitting diode chip is a current-driven element, which needs to be driven by an appropriate driving circuit. Generally, LED chips are packaged on a substrate with a driving circuit. The technology of LED chip packaging on the substrate can be mainly divided into wire bonding technology and flip-chip technology. The wire bonding technology is to fix the back of the LED chip on the substrate using silver glue or eutectic technology, and then use the wire bonding method to connect the LED chip to the connection point on the substrate using metal wires. Flip-chip technology, also known as flip-chip packaging method, is to fix the front surface of the light-emitting diode chip and the substrate on the substrate using gold balls or eutectic technology. The aforementioned eutectic technology is to evaporate or sputter a layer of eutectic solder on the front/back of the LED chip. Next, a layer of gold is plated on the pads of the substrate. Then, the substrate is placed on the heating plate and heated to the melting point of the eutectic solder, and then the light-emitting diode chip is pressed onto the welding pad to combine the gold on the welding pad with the eutectic solder on the light-emitting diode chip. Afterwards, the temperature of the substrate is lowered below the melting point of the eutectic solder, so that the eutectic solder is solidified, that is, the diebonding operation is completed. However, in order to increase the light utilization efficiency of the light-emitting diode chip, the outermost layer of the existing substrate is usually provided with a metal reflective layer. When the light-emitting diode chip is packaged by the above-mentioned eutectic technology, the metal reflective layer of the substrate will be exposed to a high-temperature environment, and it is easy to interact with the outside gas, thereby causing oxidation.

Contents of the invention

The invention provides a substrate, which can improve the problem that the metal reflective layer is easily oxidized in the high-temperature process.

The invention provides a light emitting diode with good yield rate in high temperature process.

Other purposes and advantages of the present invention can be further understood from the technical features disclosed in the present invention.

The light emitting diode device of the embodiment of the present invention includes a substrate and a light emitting diode chip disposed on the substrate. The substrate includes a base, a metal reflection layer and an anti-oxidation layer. The substrate has a first surface and a second surface opposite to each other. The metal reflective layer is disposed on the first surface of the substrate and has a first circuit structure and a plurality of first pads electrically connected to the first circuit structure. The anti-oxidation layer covers the metal reflection layer and exposes the first pads, and the metal reflection layer is located between the anti-oxidation layer and the first surface of the substrate. The metal reflective layer exposes a part of the first surface, and the anti-oxidation layer covers and is directly connected to the part of the first surface exposed by the metal reflective layer. The light emitting diode chip is electrically connected to the first circuit structure through the first pads by flip-chip or wire bonding.

The light emitting diode device of the embodiment of the present invention includes a substrate and a light emitting diode chip disposed on the substrate. The substrate includes a metal reflective layer and an anti-oxidation layer. The base has a first surface and a second surface opposite to each other. The metal reflective layer is configured on the first surface of the base. The anti-oxidation layer covers the metal reflection layer, and the metal reflection layer is located between the anti-oxidation layer and the first surface of the substrate. The metal reflective layer has a plurality of first pads, and the anti-oxidation layer exposes these first pads. The metal reflective layer exposes a part of the first surface, and the anti-oxidation layer covers and is directly connected to the part of the first surface exposed by the metal reflective layer. The LED chips are electrically connected to the first pads by flip-chip or wire bonding.

A light emitting diode device according to an embodiment of the present invention includes a substrate and a light emitting diode disposed on the substrate. The substrate includes a base, a wire layer and a reflective layer. The base has a first surface. The wire layer is configured on the base and exposes part of the first surface, and the wire layer has a plurality of pads. The reflective layer is disposed on the base, and the reflective layer covers the first surface of the portion exposed by the wire layer, exposes the pads, and is electrically insulated from the wire layer. The LEDs are electrically connected to these pads.

A light emitting diode device according to an embodiment of the present invention includes a substrate and a light emitting diode chip. The substrate includes a base, a wire layer and a reflective layer. The base has a first surface. The wire layer is disposed on the base and exposes part of the first surface, and the wire layer has a circuit structure and a plurality of pads electrically connected to the circuit structure. The reflective layer is disposed on the base, and the reflective layer covers the wire layer and exposes the pads and is electrically insulated from the wire layer, and the reflective layer covers the first surface of the part exposed by the wire layer. The LED chips are electrically connected to the pads.

According to the embodiment of the present invention, the substrate suitable for disposing the LED chip includes a base, a wire layer and a reflective layer. The base has a first surface and a second surface. The wiring layer with a plurality of pads is disposed on the base and exposes part of the first surface. The reflective layer is disposed on the base, the reflective layer covers the first surface of the part exposed by the wire layer, exposes the pads and is insulated from the wire layer. These pads are suitable for electrical connection with the LEDs.

The substrate suitable for at least one light emitting diode chip according to the embodiment of the present invention includes a base, a wire layer and a reflective layer. The base has a first surface and a second surface. The wire layer is disposed on the base and exposes part of the first surface, and the wire layer has a circuit structure and a plurality of pads electrically connected to the circuit structure. The reflective layer is disposed on the base, the reflective layer covers the wire layer and exposes the pads, the reflective layer is insulated from the wire layer and covers the first surface of the part exposed by the wire layer. These pads are suitable for electrical connection with the LEDs.

A light emitting diode device according to an embodiment of the present invention includes a substrate and a light emitting diode. The substrate includes a base, a wire layer and an insulating layer. The base has a first surface, and the wiring layer is disposed on the base and exposes a part of the first surface. The wire layer has a plurality of pads, and the insulating layer disposed on the base covers the first surface of the part exposed by the wire layer and exposes the pads. The LEDs are disposed on the substrate and electrically connected to the pads.

A light emitting diode device according to an embodiment of the present invention includes a substrate and a light emitting diode chip. The substrate includes a base, a wire layer and an insulating layer. The base has a first surface, and the wire layer is arranged on the base and exposes a part of the first surface. The wiring layer has a wiring structure and a plurality of pads electrically connected to the wiring structure. The insulating layer disposed on the base covers the wiring layer and exposes the pads and covers the first surface of the part exposed by the wiring layer. superior. The LED chips are disposed on the substrate and electrically connected to the pads.

According to the embodiment of the present invention, the substrate suitable for disposing the LED chip includes a base, a wire layer and an insulating layer. The base has a first surface and a second surface. The wire layer is configured on the base and exposes part of the first surface. The wire layer has a plurality of pads, and the insulating layer disposed on the base covers the first surface of the portion exposed by the wire layer and exposes the pads. These pads are suitable for electrical connection with the LEDs.

The substrate suitable for at least one light emitting diode chip according to the embodiment of the present invention includes a base, a wire layer and an insulating layer. The base has a first surface and a second surface. The wire layer is configured on the base and exposes part of the first surface. The wiring layer has a wiring structure and a plurality of pads electrically connected to the wiring structure. The insulating layer disposed on the base covers the wiring layer and exposes the pads and covers the first surface of the part exposed by the wiring layer. superior. These pads are suitable for electrical connection with the LEDs.

Based on the above, the substrate according to one embodiment of the present invention makes the metal reflective layer less likely to be oxidized during the high temperature process by disposing the anti-oxidation layer on the metal reflective layer. In an embodiment of the present invention, the anti-oxidation layer not only has the function of preventing oxidation of the metal reflective layer, but also has the function of reflecting light beams.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.

Description of drawings

1 is a schematic cross-sectional view of a substrate according to a first embodiment of the present invention;

Figure 2 is an enlarged schematic view of the anti-oxidation layer of Figure 1;

Fig. 3 shows the situation that the substrate of the first embodiment of the present invention is bonded to another form of LED chip;

4 is a schematic cross-sectional view of a substrate according to a second embodiment of the present invention;

FIG. 5 shows the bonding situation of the substrate of the second embodiment of the present invention and another type of LED chip.

Explanation of reference signs:

100, 100A: Substrate;

102: base;

102a, 102b: the surface of the substrate;

104: metal reflective layer;

104a, 108a: line structure;

104b, 108b: pads;

106: anti-oxidation layer;

106a: high refractive index layer;

106b: low refractive index layer;

108: conductive layer;

110: insulating layer;

200: flip-chip light-emitting diode chip;

202: a first type doped semiconductor layer;

204: the second type doped semiconductor layer;

206: light-emitting layer;

208, 210: electrodes;

300: solid crystal structure;

400: wire-bonded light-emitting diode chip;

400a: back;

410: wire;

D1, D2: thickness;

L: light beam.

Detailed ways

first embodiment

FIG. 1 is a schematic cross-sectional view of a substrate according to a first embodiment of the present invention. Referring to FIG. 1 , at least one flip chip type light emitting diode chip 200 is suitable to be disposed on the substrate 100 of this embodiment. A flip-chip LED chip 200 is shown as a representative in FIG. 1 , however, the substrate of the present invention does not limit the number of flip-chip LED chips it can carry. In other words, the substrate 100 of the present invention can carry a plurality of flip-chip LED chips 200 . In this embodiment, the flip chip LED chip 200 includes a first type doped semiconductor layer 202 , a second type doped semiconductor layer 204 , a light emitting layer 206 , a first electrode 208 and a second electrode 210 . The light emitting layer 206 is disposed between the first type doped semiconductor layer 202 and the second type doped semiconductor layer 204 . The first electrode 208 and the second electrode 210 are respectively disposed on the first-type doped semiconductor layer 202 and the second-type doped semiconductor layer 204 . The first electrode 208 and the second electrode 210 face the substrate 100 and are connected to the substrate 100 through the die-bonding structure 300 .

In this embodiment, the first-type doped semiconductor layer 202 is, for example, an N-type semiconductor layer, and the second-type doped semiconductor layer 204 is, for example, a P-type semiconductor layer. The light emitting layer 206 is, for example, a multiple quantum well structure (Multiple Quantum Well, MQW) in which gallium nitride (GaN) layers and indium gallium nitride (InGaN) layers are stacked alternately. The materials of the first electrode 208 and the second electrode 210 are conductive materials, which can be selected from gold, silver, platinum, copper, chromium, aluminum, other conductive materials and combinations thereof, but the present invention is not limited thereto.

The substrate 100 of this embodiment includes a base 102 , a metal reflective layer 104 and an anti-oxidation layer 106 . The base 102 has a first surface 102a and a second surface 102b opposite to each other. In this embodiment, the roughness of the first surface 102a may be less than 0.3 microns, so that the metal reflective layer 104 can be evenly laid on the first surface 102a to achieve a good reflective function. It is worth mentioning that when the roughness of the first surface 102a is smaller, the reflective effect of the metal reflective layer 104 is better. For example, when the roughness of the first surface 102a is less than 0.01 micron, the metal reflective layer 104 can exhibit a specular reflection effect. In this embodiment, the material of the substrate 102 may be ceramic, sapphire, silicon (Si) or silicon carbide (SiC), but the present invention is not limited thereto.

The metal reflective layer 104 of this embodiment is disposed on the first surface 102 a of the substrate 102 . In this embodiment, the metal reflective layer 104 can not only reflect part of the light beam L emitted by the flip-chip LED chip 200 so as to keep it away from the substrate 102 , but the metal reflective layer 104 itself can also be a circuit layer. In detail, the metal reflective layer 104 of this embodiment may have a circuit structure 104 a and a plurality of pads 104 b connected to the circuit structure 104 a, wherein the pads 104 b are exposed by the anti-oxidation layer 106 . The flip-chip LED chip 200 can be electrically connected to the circuit structure 104a through the pad 104b. In this embodiment, the metal reflective layer 104 has a reflectivity higher than 90% for the part of the light beam L emitted by the flip-chip LED chip 200 , and its material can be selected from silver, aluminum, gold, copper or a combination thereof.

In this embodiment, the anti-oxidation layer 106 covers the metal reflective layer 104 , and the metal reflective layer 104 is located between the anti-oxidation layer 106 and the first surface 102 a of the substrate 102 . In this embodiment, the material of the anti-oxidation layer 106 can be selected from silicon (Si), tantalum pentoxide (Ta2O5), titanium dioxide (TiO2), trititanium pentoxide (Ti3O5), niobium pentoxide (Nb2O5), Silicon dioxide (SiO2), magnesium fluoride (MgF2), or combinations thereof. It is worth mentioning that since the anti-oxidation layer 106 of this embodiment covers the metal reflective layer 104, when the flip-chip LED chip 200 is bonded to the substrate 100 by a eutectic process (the process temperature is about 280 degrees Celsius), the metal The reflective layer 104 is not easy to be oxidized or migrated due to contact with outside air. In this way, after the eutectic process is completed, the metal reflective layer 104 can maintain the original good reflective properties, thereby improving the light utilization efficiency of the flip-chip LED chip 200 .

It is worth noting that the anti-oxidation layer 106 in this embodiment not only has the function of preventing oxidation of the metal reflective layer, but also has the function of reflecting light beams. Part of the light beam L emitted by the flip-chip LED chip 200 may be transmitted towards the direction of the substrate 100 and cannot be utilized by the user. However, the anti-oxidation layer 106 of the present embodiment reflects the light beam L so that the light beam L travels away from the substrate 100 , thereby improving the light utilization efficiency of the flip-chip LED chip 200 . Specifically, compared with the prior art substrate with only a metal reflective layer, the anti-oxidation layer 106 of this embodiment can increase the reflectivity of the substrate 100 from 90% to over 98%.

FIG. 2 is an enlarged schematic view of the anti-oxidation layer in FIG. 1 . Please refer to FIG. 2 , for example, the anti-oxidation layer 106 of this embodiment may be a distributed Bragg reflector (distributed Bragg reflector, DBR). Furthermore, the anti-oxidation layer 106 of this embodiment includes a plurality of high-refractive index layers 106a and a plurality of low-refractive-index layers 106b, wherein the high-refractive-index layers 106a and the low-refractive-index layers 106b can be stacked alternately, and each high-refractive index layer The light transmittance of the index layer 106a or the low index layer 106b is higher than 92%. In this embodiment, the refractive index of the high refractive index layer 106a may be greater than or equal to 2, and the refractive index of the low refractive index layer 106b may be less than or equal to 1.7. The material of the high refractive index layer 106a can be selected from silicon (Si), tantalum pentoxide (Ta2O5), titanium dioxide (TiO2), trititanium pentoxide (Ti3O5) or niobium pentoxide (Nb2O5), and the low refractive index The material of layer 106b can be selected from silicon dioxide (SiO2) or magnesium fluoride (MgF2). In addition, if the center wavelength of the light beam L emitted by the flip-chip LED chip 200 is λ, the thickness D1 of each high refractive index layer 106a and the thickness D2 of each low refractive index layer 106b can be designed as λ/4, Therefore, the reflection effect of the anti-oxidation layer 106 in this embodiment is improved. However, the present invention is not limited to the above. In other embodiments, the anti-oxidation layer 106 can also be an anti-oxidation layer of a single material, or adopt other appropriate structures.

It is worth mentioning that, in FIG. 1 , the flip-chip LED chip 200 is bonded to the substrate 100 of this embodiment as an example. However, the present invention does not particularly limit the type of the light emitting diode chip bonded to the substrate. FIG. 3 shows the bonding situation of the substrate of the first embodiment of the present invention and another type of LED chip. Please refer to FIG. 3 , for example, the substrate 100 of this embodiment may also be bonded to a wirebonding LED chip 400 . The wire-bonded LED chip 400 can be electrically connected to the pad 104b of the metal reflective layer 104 and the circuit structure 104a of the metal reflective layer 104 through a wire 410 (material such as metal). On the other hand, the back surface 400 a of the wire-bonded LED chip 400 can be connected to the anti-oxidation layer 106 through the die-bonding structure 300 , so that the wire-bonded LED chip 400 is fixed on the substrate 100 .

second embodiment

FIG. 4 is a schematic cross-sectional view of a substrate according to a second embodiment of the present invention. Referring to FIG. 4 , the substrate 100A of this embodiment is similar to the substrate 100 of the first embodiment. The same elements as in FIG. 1 are therefore denoted by the same symbols. The difference between the two is only that the circuit structure and the pads in this embodiment are not fabricated in the metal reflective layer 104 , but are fabricated in the conductive layer 108 between the first surface 102 a and the metal reflective layer 104 . The differences between the two are described below, and the similarities will not be repeated.

Referring to FIG. 4 , at least one flip-chip LED chip 200 is suitable to be disposed on the substrate 100A of this embodiment. The substrate 100A of this embodiment includes a base 102 , a metal reflective layer 104 and an anti-oxidation layer 106 . The base 102 has a first surface 102a and a second surface 102b opposite to each other. The metal reflective layer 104 is disposed on the first surface 102 a of the substrate 102 . The anti-oxidation layer 106 covers the metal reflective layer 104 , and the metal reflective layer 104 is located between the anti-oxidation layer 106 and the first surface 102 a of the substrate 102 .

Different from the first embodiment, the substrate 100A of this embodiment may further include a conductive layer 108 . The conductive layer 108 in this embodiment is disposed between the first surface 102 a of the substrate 102 and the metal reflective layer 104 . In addition, the substrate 100A of this embodiment may further include an insulating layer 110 disposed between the conductive layer 108 and the metal reflective layer 104 to electrically insulate the conductive layer 108 from the metal reflective layer 104 . The conductive layer 108 in this embodiment has a circuit structure 108a and a plurality of pads 108b, wherein the anti-oxidation layer 106, the metal reflective layer 104 and the insulating layer 110 expose the pads 108b. The flip-chip LED chip 200 is electrically connected to the circuit structure 108a through the pad 108b. The substrate 100A of this embodiment has functions and advantages similar to those of the substrate 100 of the first embodiment, which will not be repeated here.

It is worth mentioning that, in FIG. 4 , the bonding of the flip-chip LED chip 200 and the substrate 100A of this embodiment is taken as an example. However, the present invention does not particularly limit the type of the light emitting diode chip bonded to the substrate. FIG. 5 shows the bonding situation of the substrate of the second embodiment of the present invention and another type of LED chip. Please refer to FIG. 5 , for example, the substrate 100A of this embodiment may also be bonded to a wirebonding LED chip 400 . The LED chip 400 can be electrically connected to the pad 108 b of the conductive layer 108 and the circuit structure 108 a of the conductive layer 108 through a wire 410 (material such as metal). On the other hand, the back surface 400 a of the wire-bonded LED chip 400 can be connected to the anti-oxidation layer 106 through the die-bonding structure 300 , so that the wire-bonded LED chip 400 is fixed on the substrate 100A.

To sum up, the substrate according to an embodiment of the present invention makes the metal reflective layer less likely to be oxidized during the eutectic process by disposing an anti-oxidation layer on the metal reflective layer. In an embodiment of the present invention, the anti-oxidation layer not only has the function of preventing oxidation of the metal reflective layer, but also has the function of reflecting light beams. The anti-oxidation layer in an embodiment of the present invention can reflect part of the light beam emitted by the flip-chip LED chip to a direction away from the substrate, thereby improving the light utilization efficiency of the flip-chip LED chip.

Although the present invention has been disclosed above with a flip-chip light-emitting diode chip as an embodiment, it is not intended to limit the present invention, and technical fields such as front or back eutectic die bonding belong to the protection scope of the present invention. Those skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention.

Claims (36)

1. A light emitting diode device comprising: A substrate, comprising: A base has a first surface and a second surface opposite; a metal reflective layer disposed on the first surface of the substrate and having a first circuit structure and a plurality of first pads electrically connected to the first circuit structure; and An anti-oxidation layer, covering the metal reflective layer and exposing the first pads, and the metal reflective layer is located between the anti-oxidation layer and the first surface of the substrate, wherein the metal reflective layer exposes part of The first surface, the anti-oxidation layer covers and is directly connected to the portion of the first surface exposed by the metal reflective layer; and At least one light emitting diode chip is arranged on the substrate and is electrically connected to the first circuit structure through the first pads by flip-chip or wire bonding. 2. A light emitting diode device comprising: A substrate, comprising: A base has a first surface and a second surface opposite; a metal reflective layer disposed on the first surface of the substrate; and An anti-oxidation layer covering the metal reflective layer, and the metal reflective layer is located between the anti-oxidation layer and the first surface of the substrate, wherein the metal reflective layer has a plurality of first pads, and the anti-oxidation layer is exposed Exposing the first pads, wherein the metal reflective layer exposes a portion of the first surface, the anti-oxidation layer covers and is directly connected to the portion of the first surface exposed by the metal reflective layer; and At least one light emitting diode chip is disposed on the substrate and is electrically connected to the first pads by flip-chip or wire bonding. 3. The LED device according to claim 1 or 2, wherein the anti-oxidation layer is adapted to reflect at least a part of a light beam emitted by the LED chip away from the substrate. 4. The LED device according to claim 1 or 2, wherein the anti-oxidation layer is a distributed Bragg reflection layer. 5. The LED device according to claim 1 or 2, wherein the roughness of the first surface of the substrate is less than 0.3 μm. 6. A light emitting diode device comprising: A substrate, comprising: a base having a first surface; a wire layer, disposed on the base and exposing part of the first surface, the wire layer has a plurality of pads; and a reflective layer disposed on the substrate, the reflective layer covers the first surface of the portion exposed by the wire layer and exposes the pads and is electrically insulated from the wire layer; and At least one light emitting diode is disposed on the substrate and electrically connected to the pads. 7. A light emitting diode device comprising: A substrate, comprising: a base having a first surface; a wire layer, disposed on the base and exposing part of the first surface, the wire layer has a circuit structure and a plurality of pads electrically connected to the circuit structure; and a reflective layer disposed on the base, the reflective layer covers the wire layer and exposes the pads and is electrically insulated from the wire layer, and covers the part exposed by the wire layer on the first surface; and At least one LED chip is disposed on the substrate and electrically connected to the pads. 8. The LED device according to claim 6, wherein the reflective layer covers the wire layer. 9. The light emitting diode device according to claim 6, 7 or 8, wherein the light emitting diode is electrically connected to the pads by flip-chip or wire bonding. 10. The LED device according to claim 6, 7 or 8, wherein the height of the reflective layer on the first surface of the portion exposed by the wire layer is not lower than the wire layer. 11. The LED device according to claim 6, 7 or 8, wherein the reflective layer comprises a distributed Bragg reflective layer. 12. The LED device according to claim 6, 7 or 8, wherein the reflective layer comprises a metal reflective layer. 13. The LED device according to claim 12, wherein the reflective layer further comprises an insulating layer stacked with the metal reflective layer. 14. The LED device according to claim 6, 7 or 8, wherein the roughness of the first surface of the substrate is less than 0.3 microns. 15. A substrate suitable for disposing at least one light emitting diode chip on the substrate, the substrate comprising: A base has a first surface and a second surface; a wire layer, disposed on the base and exposing part of the first surface, the wire layer has a plurality of pads; and a reflective layer configured on the base, the reflective layer covers the first surface of the portion exposed by the wire layer and exposes the pads and is insulated from the wire layer, wherein the pads Suitable for electrical connection with the LED. 16. A substrate suitable for disposing at least one light emitting diode chip on the substrate, the substrate comprising: A base has a first surface and a second surface; a wire layer, disposed on the base and exposing part of the first surface, the wire layer has a circuit structure and a plurality of pads electrically connected to the circuit structure; and a reflective layer disposed on the base, the reflective layer covers the wire layer and exposes the pads, the reflective layer is insulated from the wire layer and covers the first part of the portion exposed by the wire layer On the surface, the pads are suitable for electrical connection with the LED. 17. The substrate according to claim 15, wherein the reflective layer covers the wire layer. 18. The substrate according to claim 15, 16 or 17, wherein the height of the reflective layer on the first surface of the portion exposed by the wire layer is no lower than that of the wire layer. 19. A substrate as claimed in claim 15 or 16 or 17, wherein the reflective layer comprises a distributed Bragg reflective layer. 20. The substrate of claim 15, 16 or 17, wherein the reflective layer comprises a metal reflective layer. 21. The substrate according to claim 20, wherein the reflective layer further comprises an insulating layer stacked with the metal reflective layer. 22. The substrate of claim 15 or 16 or 17, wherein the roughness of the first surface of the substrate is less than 0.3 microns. 23. A light emitting diode device comprising: A substrate, comprising: a base having a first surface; a wire layer, disposed on the base and exposing part of the first surface, the wire layer has a plurality of pads; and an insulating layer disposed on the substrate, the insulating layer covers the first surface of the portion exposed by the wire layer and exposes the pads; and At least one light emitting diode is disposed on the substrate and electrically connected to the pads. 24. A light emitting diode device comprising: A substrate, comprising: a base having a first surface; a wire layer, disposed on the base and exposing part of the first surface, the wire layer has a circuit structure and a plurality of pads electrically connected to the circuit structure; and an insulating layer disposed on the substrate, the insulating layer covering the wire layer and exposing the pads and covering the first surface of the portion exposed by the wire layer; and At least one LED chip is disposed on the substrate and electrically connected to the pads. 25. The LED device according to claim 23, wherein the insulating layer covers the wire layer. 26. The LED device according to claim 23, 24 or 25, wherein the height of the insulation layer on the first surface of the portion exposed by the wire layer is not lower than the wire layer. 27. A light emitting diode device according to claim 24, 25 or 26, wherein the insulating layer comprises a distributed Bragg reflective layer. 28. The LED device according to claim 24, 25 or 26, further comprising a metal reflective layer stacked with the insulating layer. 29. The LED device according to claim 24, 25 or 26, wherein the roughness of the first surface of the substrate is less than 0.3 microns. 30. A substrate suitable for disposing at least one light emitting diode chip on the substrate, the substrate comprising: A base has a first surface and a second surface; a wire layer, disposed on the base and exposing part of the first surface, the wire layer has a plurality of pads; and An insulating layer is disposed on the base, the insulating layer covers the first surface of the portion exposed by the wire layer and exposes the pads, wherein the pads are suitable for connecting with the LED electrical connection. 31. A substrate suitable for disposing at least one light emitting diode chip on the substrate, the substrate comprising: A base has a first surface and a second surface; a wire layer, configured on the base and exposing part of the first surface, the wire layer has a circuit structure and a plurality of pads electrically connected to the circuit structure; and An insulating layer is disposed on the base, the insulating layer covers the wire layer and exposes the pads and covers the first surface of the portion exposed by the wire layer, wherein the pads are suitable for to be electrically connected to the light emitting diode. 32. The substrate of claim 30, wherein the insulating layer covers the wire layer. 33. The substrate according to claim 30, 31 or 32, wherein the height of the insulating layer on the first surface of the portion exposed by the wire layer is no lower than that of the wire layer. 34. A substrate as claimed in claim 30 or 31 or 32, wherein the insulating layer comprises a distributed Bragg reflective layer. 35. The substrate according to claim 30 or 31 or 32, further comprising a metal reflective layer stacked with the insulating layer. 36. The substrate of claim 30 or 31 or 32, wherein the roughness of the first surface of the substrate is less than 0.3 microns.