CN105137119A - Thin cantilever piezoresistive accelerometer and manufacturing method thereof - Google Patents
Thin cantilever piezoresistive accelerometer and manufacturing method thereof Download PDFInfo
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- CN105137119A CN105137119A CN201510460594.9A CN201510460594A CN105137119A CN 105137119 A CN105137119 A CN 105137119A CN 201510460594 A CN201510460594 A CN 201510460594A CN 105137119 A CN105137119 A CN 105137119A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- 239000010703 silicon Substances 0.000 claims abstract description 67
- 239000011521 glass Substances 0.000 claims abstract description 24
- 230000007797 corrosion Effects 0.000 claims abstract description 13
- 238000005260 corrosion Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 238000001259 photo etching Methods 0.000 claims description 16
- 238000001312 dry etching Methods 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 238000011056 performance test Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000006056 electrooxidation reaction Methods 0.000 abstract 1
- 230000001133 acceleration Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The invention discloses a thin cantilever piezoresistive accelerometer, which comprises glass, a top silicon layer, a bottom silicon layer and an oxide layer, wherein the top silicon layer is arranged on the upper surface of the glass; the top silicon layer and the glass are bonded via an anode; and the oxide layer is arranged between the top silicon layer and the bottom silicon layer. The invention also discloses a thin cantilever piezoresistive accelerometer manufacturing method. according to the thin cantilever piezoresistive accelerometer provided by the invention, problems that the cantilever thickness can not reach 1um after corrosion and the thickness can not be accurately controlled in a method of forming a mass block and a cantilever structure through a wet corrosion mode, and technical steps are increased and pollution is caused in the steps by adopting an electrochemical corrosion mode can be solved. The anti-overload ability is strong, reliability is high, the size is small, and sensitivity and the frequency response are improved.
Description
Technical field
The present invention relates to sensor technical field, be specifically related to a kind of thin semi-girder piezoresistive accelerometer and manufacture method thereof.
Background technology
Piezoresistance type acceleration sensor is the one of sensor, can be divided into system feedback and navigation instrument two kinds.The former is for the use of control system as acceleration signal feedback, and the latter is the acceleration detecting navigation instrument.
Current piezoresistive accelerometer all adopts cantilever beam structure, mass and girder construction is formed by wet etching mode, the thickness of the corrosion back rest cannot reach 1um, and thickness can not accurately control, and turn increases processing step as adopted electrochemical means corrosion and can bring unnecessary pollution in process.
Summary of the invention
The technical problem to be solved in the present invention is the defect overcoming prior art, provides a kind of thin semi-girder piezoresistive accelerometer and manufacture method thereof.
In order to solve the problems of the technologies described above, one aspect of the present invention provides following technical scheme:
A kind of thin semi-girder piezoresistive accelerometer, it comprises glass, top silicon layer, end silicon layer and oxide layer; Described top silicon layer is arranged on the upper surface of described glass, passes through anode linkage between described top silicon layer and described glass; Oxide layer is provided with between described top silicon layer and silicon layer of the described end.
Further, described top silicon layer, oxide layer and end silicon layer are formed by SOI type silicon chip.
Further, described glass carries out anode linkage by the top silicon layer of bonding and SOI type silicon chip.
Further, described top silicon layer crosses the displacement space that wet etching forms mass.
Further, described end silicon layer and oxide layer form mass by dry etching.
Another aspect provides a kind of manufacture method of thin semi-girder piezoresistive accelerometer, it comprises following step:
S1, SOI type silicon chip to be cleaned and once oxidation and nitride deposition, generate silicon dioxide layer and silicon nitride layer respectively in the upper and lower surface of SOI type silicon chip;
S2, carry out splash-proofing sputtering metal chromium to glass, photoetching corrosion forms crome metal mask, by wet etching glass, forms amplitude space;
S3, make glass carry out bonding with the top silicon layer of SOI type silicon chip by anode linkage to be connected;
S4, to be combined by wet etching and remove end silicon layer at the lower surface of SOI type silicon chip, expose silicon dioxide layer;
S5, according to the ohmic contact regions of sensitive resistance in sensing unit, photoetching is carried out to silicon dioxide and form ohmic contact regions filling orifice, on the n type single crystal silicon sheet in the filling orifice of ohmic contact regions, inject boron by large line implanter, form ohmic contact regions;
S6, according to accelerometer semi-girder sensitive position, photoetching is carried out to silicon dioxide layer and form sensitive resistance filling orifice mask, formed by dry etching silicon dioxide and inject window;
S7, on the n type single crystal silicon sheet injected in window, inject boron by large line implanter, form sensitive resistance district;
S8, anneal, deposition forms silicon dioxide insulating layer
S9, ohmic contact regions to be etched, form ohmic contact hole;
S10, carry out splash-proofing sputtering metal aluminium;
S11, form photoresist mask by photoetching, etch exposed aluminium out, form aluminum lead and electrode;
S12, cantilever beam structure corresponding to accelerometer carry out photoetching, form cantilever beam structure district, mass district and release district, and remove the silicon dioxide layer in release district with dry etching, expose cantilever beam structure release district;
S13, discharge district by dry etching, form cantilever beam structure;
S14, finally carry out encapsulating, pressure welding and performance test.
The beneficial effect that the present invention reaches is:
Thin semi-girder piezoresistive accelerometer provided by the invention, solve the method being formed mass and girder construction by wet etching mode, the thickness of the corrosion back rest cannot reach 1um, thickness can not accurately control, and adopts electrochemical means corrosion can increase processing step and can bring the problem of pollution in process.Soi wafer structure combines with arrangements of accelerometers design by the present invention, by forming thin semi-girder to SOI high-precision top silicon layer etching; The thickness that the present invention's thin semi-girder piezoresistive accelerometer can push up silicon layer tailored thicknesses and semi-girder according to SOI controls range and the resonance frequency of thin semi-girder piezoresistive accelerometer, the overall dimensions of thin semi-girder piezoresistive accelerometer can be reduced again simultaneously, thin semi-girder piezoresistive accelerometer is made to have anti-overload ability strong, reliability is high, the feature that volume is little, and improve its sensitivity and frequency response.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for instructions, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the structural representation of the thin semi-girder piezoresistive accelerometer of the embodiment of the present invention 1;
Fig. 2 is the structural representation removing top silicon layer in the thin semi-girder piezoresistive accelerometer of the embodiment of the present invention 1;
Fig. 3 is the structural representation of the embodiment of the present invention 2.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described, should be appreciated that preferred embodiment described herein is only for instruction and explanation of the present invention, is not intended to limit the present invention.
Embodiment 1:
As depicted in figs. 1 and 2, a kind of thin semi-girder piezoresistive accelerometer, it comprises glass 1, top silicon layer 2, end silicon layer 3 and oxide layer 4; Described top silicon layer 2 is arranged on the upper surface of described glass 1, passes through anode linkage between described top silicon layer 2 and described glass 1; Oxide layer 4 is provided with between described top silicon layer 2 and silicon layer of the described end 3.
In the present embodiment, described top silicon layer 2, oxide layer 4 and end silicon layer 3 are formed by SOI type silicon chip.
In the present embodiment, described glass 1 carries out anode linkage by the top silicon layer 2 of bonding and SOI type silicon chip.
In the present embodiment, described top silicon layer 2 crosses the displacement space that wet etching forms mass.
In the present embodiment, described end silicon layer 3 and oxide layer 4 form mass by dry etching.
Embodiment 2:
As shown in Figure 3, a kind of manufacture method of thin semi-girder piezoresistive accelerometer, it comprises following step:
S1, SOI type silicon chip to be cleaned and once oxidation and nitride deposition, generate silicon dioxide layer and silicon nitride layer respectively in the upper and lower surface of SOI type silicon chip;
S2, carry out splash-proofing sputtering metal chromium to glass, the corrosion of photoetching M1 version forms crome metal mask, by wet etching glass, forms amplitude space;
S3, make glass carry out bonding with the top silicon layer of SOI type silicon chip by anode linkage to be connected;
S4, to be combined by wet etching and remove end silicon layer at the lower surface of SOI type silicon chip, expose silicon dioxide layer;
S5, according to the ohmic contact regions of sensitive resistance in sensing unit, the corrosion of photoetching M2 version is carried out to silicon dioxide and form ohmic contact regions filling orifice, on the n type single crystal silicon sheet in the filling orifice of ohmic contact regions, inject boron by large line implanter, form ohmic contact regions;
S6, according to accelerometer semi-girder sensitive position, photoetching M3 version is carried out to silicon dioxide layer and form sensitive resistance filling orifice mask, formed by dry etching silicon dioxide and inject window;
S7, on the n type single crystal silicon sheet injected in window, inject boron by large line implanter, form sensitive resistance district;
S8, anneal, deposition forms silicon dioxide insulating layer
S9, photoetching M4 version, etch ohmic contact regions, forms ohmic contact hole;
S10, carry out splash-proofing sputtering metal aluminium;
S11, form photoresist mask by photoetching M5 version, etch exposed aluminium out, form aluminum lead and electrode;
S12, cantilever beam structure corresponding to accelerometer carry out photoetching M6 version, form cantilever beam structure district, mass district and release district, and remove the silicon dioxide layer in release district with dry etching, expose cantilever beam structure release district;
S13, discharge district by dry etching, form cantilever beam structure;
S14, finally carry out encapsulating, pressure welding and performance test.
There is oxide layer due in the middle of SOI substrate, so corrosion depth is controllable very accurate, thus increase substantially its performance, significantly can reduce chip size, can not pollution be brought simultaneously.
Thin semi-girder piezoresistive accelerometer provided by the invention, solve the method being formed mass and girder construction by wet etching mode, the thickness of the corrosion back rest cannot reach 1um, thickness can not accurately control, and adopts electrochemical means corrosion can increase processing step and can bring the problem of pollution in process.Soi wafer structure combines with arrangements of accelerometers design by the present invention, by forming thin semi-girder to SOI high-precision top silicon layer etching; The thickness that the present invention's thin semi-girder piezoresistive accelerometer can push up silicon layer tailored thicknesses and semi-girder according to SOI controls range and the resonance frequency of thin semi-girder piezoresistive accelerometer, the overall dimensions of thin semi-girder piezoresistive accelerometer can be reduced again simultaneously, thin semi-girder piezoresistive accelerometer is made to have anti-overload ability strong, reliability is high, the feature that volume is little, and improve its sensitivity and frequency response.
Last it is noted that the foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, although with reference to previous embodiment to invention has been detailed description, for a person skilled in the art, it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a thin semi-girder piezoresistive accelerometer, is characterized in that, comprises glass, top silicon layer, end silicon layer and oxide layer; Described top silicon layer is arranged on the upper surface of described glass, passes through anode linkage between described top silicon layer and described glass; Oxide layer is provided with between described top silicon layer and silicon layer of the described end.
2. the thin semi-girder piezoresistive accelerometer of one according to claim 1, is characterized in that, described top silicon layer, oxide layer and end silicon layer are formed by SOI type silicon chip.
3. the thin semi-girder piezoresistive accelerometer of one according to claim 1, is characterized in that, described glass carries out anode linkage by the top silicon layer of bonding and SOI type silicon chip.
4. the thin semi-girder piezoresistive accelerometer of one according to claim 1, is characterized in that, described top silicon layer crosses the displacement space that wet etching forms mass.
5. the thin semi-girder piezoresistive accelerometer of one according to claim 1, is characterized in that, described end silicon layer and oxide layer form mass by dry etching.
6. a manufacture method for the thin semi-girder piezoresistive accelerometer as described in Claims 1 to 5, is characterized in that, comprise the following steps:
S1, generate silicon dioxide layer and silicon nitride layer respectively on the upper and lower surface of SOI type silicon chip;
S2, carry out splash-proofing sputtering metal chromium to glass, photoetching corrosion forms crome metal mask, by wet etching glass, forms amplitude space;
S3, make glass carry out bonding with the top silicon layer of SOI type silicon chip by anode linkage to be connected;
S4, remove end silicon layer at the lower surface of SOI type silicon chip, expose silicon dioxide layer;
S5, according to the ohmic contact regions of sensitive resistance in sensing unit, photoetching is carried out to silicon dioxide layer and form ohmic contact regions filling orifice, on the n type single crystal silicon sheet in the filling orifice of ohmic contact regions, inject boron, form ohmic contact regions;
S6, according to accelerometer semi-girder sensitive position, photoetching is carried out to silicon dioxide layer and form sensitive resistance filling orifice mask, formed by dry etching silicon dioxide and inject window;
S7, on the n type single crystal silicon sheet injected in window, inject boron, form sensitive resistance district;
S8, anneal, deposition forms silicon dioxide insulating layer
S9, ohmic contact regions to be etched, form ohmic contact hole;
S10, carry out splash-proofing sputtering metal aluminium;
S11, form photoresist mask by photoetching, etch exposed aluminium out, form aluminum lead and electrode;
S12, cantilever beam structure corresponding to accelerometer carry out photoetching, form cantilever beam structure district, mass district and release district, and remove the silicon dioxide layer in release district with dry etching, expose cantilever beam structure release district;
S13, discharge district by dry etching, form cantilever beam structure;
S14, carry out encapsulating, pressure welding and performance test.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510460594.9A CN105137119A (en) | 2015-07-31 | 2015-07-31 | Thin cantilever piezoresistive accelerometer and manufacturing method thereof |
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| CN201510460594.9A CN105137119A (en) | 2015-07-31 | 2015-07-31 | Thin cantilever piezoresistive accelerometer and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105974104A (en) * | 2016-05-12 | 2016-09-28 | 南京信息工程大学 | Giant piezoresistive structure based cantilever beam biochemical sensor and production method of cantilever beam |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105974104A (en) * | 2016-05-12 | 2016-09-28 | 南京信息工程大学 | Giant piezoresistive structure based cantilever beam biochemical sensor and production method of cantilever beam |
| CN105974104B (en) * | 2016-05-12 | 2017-12-15 | 南京信息工程大学 | Cantilever beam biochemical sensor and cantilever beam preparation method based on huge piezo-resistive arrangement |
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Addressee: WUXI EASYMEMS TECHNOLOGY CO., LTD. Document name: Notification that Application Deemed to be Withdrawn |
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Application publication date: 20151209 |