CN105070986B - Dielectric dual-mode bandpass filter based on patch structure - Google Patents
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Abstract
Description
技术领域technical field
本发明涉及一种双模带通滤波器,尤其是一种基于贴片结构的介质双模带通滤波器,属于微波通信技术领域。The invention relates to a dual-mode bandpass filter, in particular to a dielectric dual-mode bandpass filter based on a patch structure, belonging to the technical field of microwave communication.
背景技术Background technique
在科学技术高度发展的今天,信息的交互传播扮演极其重要的角色,微波滤波器是无线通信系统的关键技术,为工作在微波频段的通信系统提供中心频率选择的作用。在通信频段的窄带宽内,微波滤波器有严格指标要求:高矩形度的频率选择特性、高抑制度的带外抑制、多模式的通带、高性能的回波损耗、低插入损耗、大功率容量;在工业生产和应用上,又希望微波滤波器易加工生产、体积小、重量轻、热稳定性能好。介质多模滤波器能够较好地完成这些要求指标。实际应用中,介质多模滤波器经常面临加工的技术难题。传统的介质多模滤波器利用切角技术或者螺钉技术来实现模式之间的耦合和频率控制,这需要对介质块进行挖孔切角,给加工带来了技术难度的同时也增加了加工成本。In today's highly developed science and technology, the interactive dissemination of information plays an extremely important role. Microwave filters are the key technology of wireless communication systems, and provide the central frequency selection function for communication systems working in the microwave frequency band. In the narrow bandwidth of the communication frequency band, microwave filters have strict requirements: high rectangularity frequency selection characteristics, high rejection out-of-band suppression, multi-mode passband, high-performance return loss, low insertion loss, large Power capacity; in industrial production and application, microwave filters are expected to be easy to process and produce, small in size, light in weight, and good in thermal stability. Dielectric multimode filters can better fulfill these requirements. In practical applications, dielectric multimode filters often face technical difficulties in processing. Traditional dielectric multimode filters use angle cutting technology or screw technology to achieve coupling and frequency control between modes, which requires digging holes and cutting angles on the dielectric block, which brings technical difficulties to processing and increases processing costs. .
据调查与了解,已经公开的现有技术如下:According to investigation and understanding, the existing technologies that have been disclosed are as follows:
1)2013年Ke-Li Wu等人在IEEE Trans.Microwave.Theory Tech上发表了“ADual-Mode Dielectric Resonator Filter With Planar Coupling Configuration”,文章采用圆盘形介质谐振器的两个TM11简并模式,通过在介质谐振器中挖孔并插入金属螺钉,实现对两个模式频率的控制以及和模式间耦合强度的控制,从而设计出介质双模滤波器。这个结构的优点是结构简单清晰,易于利用平面拓扑结构设计多阶滤波器;缺点是挖孔对介质谐振器的加工带来难度。1) In 2013, Ke-Li Wu and others published "ADual-Mode Dielectric Resonator Filter With Planar Coupling Configuration" on IEEE Trans.Microwave.Theory Tech. The article uses two TM11 degenerate modes of a disk-shaped dielectric resonator, By digging holes in the dielectric resonator and inserting metal screws, the control of the frequency of the two modes and the control of the coupling strength between the modes are realized, thereby designing a dielectric dual-mode filter. The advantage of this structure is that the structure is simple and clear, and it is easy to use the planar topology to design multi-order filters; the disadvantage is that digging holes brings difficulties to the processing of the dielectric resonator.
2)2012年,日本学者S.Yakuno和T.Ishizaki在Microwaves ConferenceProceedings(APMC)上发表了“Novel Cavity-Type Multi-Mode Filter using TEM-modeand TE-mode”,文章利用两个圆柱介质谐振器,通过合理控制两个介质谐振器的距离,可以在两个简并TE11模式激励起TEM模,在谐振模式的电场交叉处插入螺钉来控制模式间的耦合,从而设计出三模单腔滤波器。缺点是不适合设计多腔结构,所以带外抑制不高。2) In 2012, Japanese scholars S.Yakuno and T.Ishizaki published "Novel Cavity-Type Multi-Mode Filter using TEM-mode and TE-mode" on Microwaves Conference Proceedings (APMC). The article uses two cylindrical dielectric resonators, By reasonably controlling the distance between the two dielectric resonators, the TEM mode can be excited in the two degenerate TE11 modes, and a screw can be inserted at the intersection of the electric field of the resonant mode to control the coupling between the modes, thereby designing a three-mode single-cavity filter. The disadvantage is that it is not suitable for designing a multi-cavity structure, so the out-of-band suppression is not high.
3)2004年,国外学者M.M.Rahman和Weili Wang等人在34th MicrowaveConference 上发表了“A Compact Triple-mode Plated Ceramic Block Based HybridFilter for Base-stationApplication”,文章利用介质块切角技术,实现矩形腔三个简并模式的耦合,同时利用螺钉来控制每一个模式的谐振频率,最后对介质块进行镀银操作。同时文章还采用同轴滤波器来抑制高次模。这个结构的优点是多腔结构和同轴腔的采用,提高了带外抑制和抑制了高次模,同时回波损耗也很好,缺点是无论切角还是插入螺钉,都需要先对介质块进行切角挖孔操作,加工难度极高。3) In 2004, foreign scholars M.M.Rahman and Weili Wang published "A Compact Triple-mode Plated Ceramic Block Based HybridFilter for Base-stationApplication" on the 34th MicrowaveConference. Coupling of degenerate modes, while using screws to control the resonance frequency of each mode, and finally silver-plating the dielectric block. At the same time, the article also uses a coaxial filter to suppress high-order modes. The advantage of this structure is the use of multi-cavity structure and coaxial cavity, which improves the out-of-band suppression and suppresses the high-order mode, and the return loss is also very good. It is extremely difficult to perform corner cutting and digging operations.
4)2002年,国外学者V.Walker和I.C.Hunter等人在Microwaves and WirelessComponent Letters上发表了“Design of Triple Mode TE01d Resonator TransmissionFilters”,文章利用一个长方体的介质谐振器,采用的三个TE01d简并模式,通过一个金属圆盘来控制三个谐振模式频率的变化,模式耦合是通过把介质块切角和金属螺钉实现。4) In 2002, foreign scholars V.Walker and I.C.Hunter published "Design of Triple Mode TE01d Resonator Transmission Filters" on Microwaves and Wireless Component Letters. The article used a cuboid dielectric resonator and adopted three TE01d degenerate modes , A metal disc is used to control the frequency changes of the three resonant modes, and the mode coupling is achieved by cutting the corner of the dielectric block and metal screws.
综上所述,已公开的介质多模滤波器文章或专利文献多涉及对介质块进行切角或者挖孔,所提的方法和结构加工技术难度大,成本高,而且已公开的介质多模滤波器文章或专利文献多涉及单腔介质多模滤波器,结构较复杂,不适合多阶多腔高性能滤波器设计,所提方法和结构实现的性能有限。To sum up, the published dielectric multimode filter articles or patent documents mostly involve cutting corners or digging holes on the dielectric block. The proposed method and structure processing technology are difficult and costly, and the published dielectric multimode Filter articles or patent documents mostly involve single-cavity dielectric multimode filters with complex structures, which are not suitable for the design of multi-order multi-cavity high-performance filters, and the performance of the proposed method and structure is limited.
发明内容Contents of the invention
本发明的目的是为了解决上述现有技术的缺陷,提供了一种基于贴片结构的介质双模带通滤波器,该滤波器结构简单、实现方便,在一个介质谐振器的不同位置贴金属贴片,可以通过调节金属贴片的尺寸实现对谐振模式的频率控制。The purpose of the present invention is to solve the defects of the above-mentioned prior art, and to provide a dielectric dual-mode bandpass filter based on a patch structure. The filter has a simple structure and is easy to implement. Patch, the frequency control of the resonant mode can be achieved by adjusting the size of the metal patch.
本发明的目的可以通过采取如下技术方案达到:The purpose of the present invention can be achieved by taking the following technical solutions:
基于贴片结构的介质双模带通滤波器,包括腔体,所述腔体的中心位置放置一个介质谐振器,所述介质谐振器的上、下两端与腔体相接;A dielectric dual-mode bandpass filter based on a patch structure, including a cavity, a dielectric resonator is placed at the center of the cavity, and the upper and lower ends of the dielectric resonator are connected to the cavity;
所述介质谐振器的外侧面上贴有第一金属贴片和第二金属贴片,所述第一金属贴片的横向中心线与第二金属贴片的横向中心线垂直,所述第一金属贴片和第二金属贴片用于控制介质谐振器两个谐振模式的谐振频率;The outer surface of the dielectric resonator is pasted with a first metal patch and a second metal patch, the transverse centerline of the first metal patch is perpendicular to the transverse centerline of the second metal patch, and the first The metal patch and the second metal patch are used to control the resonance frequencies of the two resonance modes of the dielectric resonator;
所述介质谐振器在两个谐振模式的磁场分布交加处贴有第三金属贴片,所述第三金属贴片用于控制介质谐振器两个谐振模式之间的耦合强度。The dielectric resonator is attached with a third metal patch at the intersection of the magnetic field distributions of the two resonance modes, and the third metal patch is used to control the coupling strength between the two resonance modes of the dielectric resonator.
作为一种实施方案,所述腔体在与第一金属贴片相对的位置上设有第一端口,所述第一端口处设有第一同轴线,且第一端口与介质谐振器之间设有第一金属环,所述第一金属环的一端接第一同轴线的内导体,另一端接腔体的底面;所述第一金属环用于控制第一端口与激励的谐振模式之间的耦合强度;As an implementation, the cavity is provided with a first port at a position opposite to the first metal patch, a first coaxial line is provided at the first port, and the gap between the first port and the dielectric resonator A first metal ring is provided, one end of the first metal ring is connected to the inner conductor of the first coaxial line, and the other end is connected to the bottom surface of the cavity; the first metal ring is used to control the relationship between the first port and the excited resonant mode the coupling strength;
所述腔体在与第二金属贴片相对的位置上设有第二端口,所述第二端口处设有第二同轴线,且第二端口与介质谐振器之间设有第二金属环,所述第二金属环的一端接第二同轴线的内导体,另一端接腔体的底面;所述第二金属环用于控制第二端口与激励的谐振模式之间的耦合强度。The cavity is provided with a second port at a position opposite to the second metal patch, a second coaxial line is provided at the second port, and a second metal is provided between the second port and the dielectric resonator. One end of the second metal ring is connected to the inner conductor of the second coaxial line, and the other end is connected to the bottom surface of the cavity; the second metal ring is used to control the coupling strength between the second port and the excited resonant mode.
作为一种实施方案,所述腔体为圆柱腔体或多边形腔体。As an embodiment, the cavity is a cylindrical cavity or a polygonal cavity.
作为一种实施方案,所述介质谐振器为盘形介质谐振器、柱形介质谐振器或多边形介质谐振器。As an implementation, the dielectric resonator is a disk-shaped dielectric resonator, a cylindrical dielectric resonator or a polygonal dielectric resonator.
作为一种实施方案,所述多边形介质谐振器为矩形介质谐振器;所述介质谐振器为矩形介质谐振器时,所述第一金属贴片和第二金属贴片分别设置在矩形介质谐振器相邻的两个外侧面上。As an implementation, the polygonal dielectric resonator is a rectangular dielectric resonator; when the dielectric resonator is a rectangular dielectric resonator, the first metal patch and the second metal patch are respectively arranged on the rectangular dielectric resonator on two adjacent outer surfaces.
作为一种实施方案,所述第一金属贴片和第二金属贴片为圆形金属贴片、环形金属贴片或多边形金属贴片。As an embodiment, the first metal patch and the second metal patch are circular metal patches, circular metal patches or polygonal metal patches.
作为一种实施方案,所述第三金属贴片为圆形金属贴片或多边形金属贴片。As an implementation, the third metal patch is a circular metal patch or a polygonal metal patch.
作为一种实施方案,所述第一金属环和第二金属环为圆环或矩形环。As an embodiment, the first metal ring and the second metal ring are circular rings or rectangular rings.
本发明相对于现有技术具有如下的有益效果:Compared with the prior art, the present invention has the following beneficial effects:
1、本发明的介质双模带通滤波器基于贴片技术,在一个介质谐振器的不同位置贴金属贴片,从而控制谐振模式的谐振频率和谐振模式之间的耦合强度,利用金属贴片代替介质切角和螺钉,可以解决介质块的加工问题,极大程度地减小了加工难度,利用这种技术设计的基于贴片结构的介质双模滤波器具备高性能的同时,结构也比较简单,而且实现方便。1. The dielectric dual-mode bandpass filter of the present invention is based on patch technology, and metal patches are pasted on different positions of a dielectric resonator, thereby controlling the resonance frequency of the resonant mode and the coupling strength between the resonant modes, utilizing the metal patch Instead of cutting corners and screws, it can solve the processing problem of the dielectric block and greatly reduce the difficulty of processing. The dielectric dual-mode filter based on the patch structure designed by this technology has high performance, and the structure is also relatively Simple and easy to implement.
2、本发明的介质双模带通滤波器在介质谐振器外侧面贴有金属贴片,通过调节该金属贴片的尺寸可以控制谐振模式的谐振频率;在介质谐振器两个谐振模式的磁场分布交加处贴有金属贴片,通过调节该金属贴片的尺寸可以控制谐振模式之间的耦合强度;在腔体的端口与介质谐振器之间设置金属环,通过改变金属环的面积可以控制端耦合强度,即端口与激励的谐振模式之间的耦合强度。2. The dielectric dual-mode bandpass filter of the present invention has a metal patch on the outer surface of the dielectric resonator, and the resonant frequency of the resonant mode can be controlled by adjusting the size of the metal patch; the magnetic field of the two resonant modes of the dielectric resonator A metal patch is pasted at the intersection of the distribution, and the coupling strength between the resonant modes can be controlled by adjusting the size of the metal patch; a metal ring is set between the port of the cavity and the dielectric resonator, and the area of the metal ring can be controlled by changing the area of the metal ring. Port coupling strength, that is, the coupling strength between the port and the excited resonant mode.
3、本发明由于采用了金属贴片技术,使得设计的单腔介质双模滤波器结构简单,从而方便利用平面拓扑结构技术来设计多阶多腔带通滤波器,可以实现更高带外抑制,更高通带矩形度等高性能带通滤波器指标,同时方便引入传输零点,可以进一步提高滤波器的性能,解决了现有的单腔介质多模滤波器结构复杂,不适合多阶多腔高性能滤波器设计,所实现的性能有限的问题。3. Due to the adoption of the metal patch technology, the present invention makes the designed single-cavity dielectric dual-mode filter simple in structure, thereby facilitating the design of multi-order multi-cavity bandpass filters by using planar topology technology, which can achieve higher out-of-band rejection , higher passband rectangularity and other high-performance bandpass filter indicators, and at the same time it is convenient to introduce transmission zeros, which can further improve the performance of the filter, and solve the problem that the existing single-cavity dielectric multimode filter has a complex structure and is not suitable for multi-order multi-cavity High-performance filter design, the problem of limited performance achieved.
附图说明Description of drawings
图1为本发明实施例1的介质双模带通滤波器正面立体结构图。Fig. 1 is a front perspective structure diagram of a dielectric dual-mode bandpass filter according to Embodiment 1 of the present invention.
图2为本发明实施例1的介质双模带通滤波器背面立体结构图。FIG. 2 is a three-dimensional structural view of the back of the dielectric dual-mode bandpass filter according to Embodiment 1 of the present invention.
图3为本发明实施例1的腔体放置介质谐振器的结构图。FIG. 3 is a structural diagram of a dielectric resonator placed in a cavity according to Embodiment 1 of the present invention.
图4为本发明实施例1的TM120模式的磁场分布图。FIG. 4 is a magnetic field distribution diagram of the TM120 mode of Embodiment 1 of the present invention.
图5为本发明实施例1的TM210模式的磁场分布图。FIG. 5 is a magnetic field distribution diagram of the TM210 mode of Embodiment 1 of the present invention.
图6为本发明实施例1的介质谐振器的后侧面贴金属贴片的结构图。FIG. 6 is a structural view of the dielectric resonator according to Embodiment 1 of the present invention with a metal patch attached to the rear side.
图7为本发明实施例1的TM120模式的谐振频率控制曲线图。FIG. 7 is a graph showing the resonance frequency control of the TM120 mode in Embodiment 1 of the present invention.
图8为本发明实施例1的介质谐振器的左侧面贴金属贴片的结构图。FIG. 8 is a structural view of the dielectric resonator according to Embodiment 1 of the present invention with a metal patch attached to the left side.
图9为本发明实施例1的TM210模式的谐振频率控制曲线图。FIG. 9 is a graph showing the resonant frequency control of the TM210 mode in Embodiment 1 of the present invention.
图10为本发明实施例1的介质谐振器在两个谐振频率的磁场分布交加处贴金属贴片的结构图。FIG. 10 is a structural diagram of a dielectric resonator according to Embodiment 1 of the present invention where a metal patch is pasted at the intersection of the magnetic field distributions of two resonant frequencies.
图11为本发明实施例1的TM120模式和TM210模式之间的耦合强度控制曲线图。Fig. 11 is a graph showing the coupling strength control curve between the TM120 mode and the TM210 mode in Example 1 of the present invention.
图12为本发明实施例1的第一端口与介质谐振器之间设置金属环的结构图。Fig. 12 is a structural diagram of a metal ring disposed between the first port and the dielectric resonator in Embodiment 1 of the present invention.
图13为本发明实施例1的端耦合强度控制曲线图。Fig. 13 is a graph showing the end coupling strength control curve of Embodiment 1 of the present invention.
图14为本发明实施例1的介质双模带通滤波器的S参数响应曲线图。FIG. 14 is an S parameter response curve of the dielectric dual-mode bandpass filter according to Embodiment 1 of the present invention.
图15为本发明实施例2的四阶线性拓扑结构图。FIG. 15 is a fourth-order linear topology structure diagram of Embodiment 2 of the present invention.
图16为本发明实施例2的线性拓扑结构双模双腔介质带通滤波器的平面结构图。Fig. 16 is a plane structure diagram of a linear topology dual-mode dual-cavity dielectric bandpass filter according to Embodiment 2 of the present invention.
图17为本发明实施例2的线性拓扑结构双模双腔介质带通滤波器采用金属环实现腔间耦合控制曲线图。Fig. 17 is a graph showing inter-cavity coupling control achieved by metal rings in the linear topology dual-mode dual-cavity dielectric bandpass filter according to Embodiment 2 of the present invention.
图18为本发明实施例2的线性拓扑结构双模双腔介质带通滤波器的S参数响应曲线图。Fig. 18 is an S-parameter response curve of the linear topology dual-mode dual-cavity dielectric bandpass filter according to Embodiment 2 of the present invention.
图19为本发明实施例3的八阶线性拓扑结构图。FIG. 19 is an eighth-order linear topology structure diagram of Embodiment 3 of the present invention.
图20为本发明实施例3的线性拓扑结构双模四腔介质带通滤波器的平面结构图。Fig. 20 is a plane structure diagram of a linear topology dual-mode four-cavity dielectric bandpass filter according to Embodiment 3 of the present invention.
图21为本发明实施例3的线性拓扑结构双模四腔介质带通滤波器的S参数响应曲线图。Fig. 21 is an S-parameter response curve of a linear topology dual-mode four-cavity dielectric bandpass filter according to Embodiment 3 of the present invention.
图22为本发明实施例4的四阶交叉拓扑结构图。FIG. 22 is a diagram of a fourth-order crossover topology according to Embodiment 4 of the present invention.
图23为本发明实施例4的交叉拓扑结构双模双腔介质带通滤波器的平面结构图。Fig. 23 is a plane structure diagram of a crossover topology dual-mode dual-cavity dielectric bandpass filter according to Embodiment 4 of the present invention.
图24为图23中所示A处的正面结构示意图。FIG. 24 is a front view of the structure at point A shown in FIG. 23 .
图25为本发明实施例4的交叉拓扑结构双模双腔介质带通滤波器的S参数响应曲线图。Fig. 25 is an S-parameter response curve of the crossover topology dual-mode dual-cavity dielectric bandpass filter according to Embodiment 4 of the present invention.
图26为本发明实施例5的八阶交叉拓扑结构图。FIG. 26 is a diagram of an eighth-order crossover topology according to Embodiment 5 of the present invention.
图27为本发明实施例5的交叉拓扑结构双模四腔介质带通滤波器的平面结构图。Fig. 27 is a plane structure diagram of a dual-mode four-cavity dielectric bandpass filter with a crossover topology according to Embodiment 5 of the present invention.
图28为图27中所示B处的正面结构示意图。Fig. 28 is a schematic view of the front structure at B shown in Fig. 27 .
图29为本发明实施例5的交叉拓扑结构双模四腔介质带通滤波器的S参数响应曲线图。Fig. 29 is an S-parameter response curve of a dual-mode four-cavity dielectric bandpass filter with a crossover topology according to Embodiment 5 of the present invention.
其中,1-腔体,2-介质谐振器,3-第一金属贴片,4-第二金属贴片,5-第三金属贴片,6-第一同轴线,7-第一金属环,8-第二同轴线,9-第二金属环。Among them, 1-cavity, 2-dielectric resonator, 3-first metal patch, 4-second metal patch, 5-third metal patch, 6-first coaxial line, 7-first metal ring , 8-the second coaxial line, 9-the second metal ring.
具体实施方式detailed description
下面结合实施例及附图对本发明作进一步详细的描述,但本发明的实施方式不限于此。The present invention will be further described in detail below in conjunction with the embodiments and the accompanying drawings, but the embodiments of the present invention are not limited thereto.
实施例1:Example 1:
如图1和图2所示,本实施例的介质双模带通滤波器包括腔体1,所述腔体1为矩形腔体,其尺寸为30mm*30mm*10mm,在腔体1中心位置放置一个介质谐振器2,所述介质谐振器2的上、下两端与腔体1相接,介质谐振器2采用的两个简并模式(即谐振模式)称为TM120模式和TM210模式;As shown in Figures 1 and 2, the dielectric dual-mode bandpass filter of this embodiment includes a cavity 1, which is a rectangular cavity with a size of 30mm*30mm*10mm, located at the center of the cavity 1 Place a dielectric resonator 2, the upper and lower ends of the dielectric resonator 2 are connected to the cavity 1, and the two degenerate modes (i.e. resonance modes) adopted by the dielectric resonator 2 are called TM120 mode and TM210 mode;
所述介质谐振器2为矩形介质谐振器,其尺寸为20mm*20mm*10mm,介质相对介电常数为21.4,在介质谐振器2相邻的两个外侧面(本实施例中,两个外侧面为后侧面和左侧面)上贴有第一金属贴片3和第二金属贴片4,可看出第一金属贴片3的横向中心线与第二金属贴片4的横向中心线垂直,所述第一金属贴片3和第二金属贴片4用于控制介质谐振器2两个谐振模式的谐振频率,其中第一金属贴片3控制的是TM120模式的谐振频率,第二金属贴片4控制的是TM210模式的谐振频率;The dielectric resonator 2 is a rectangular dielectric resonator with a size of 20mm*20mm*10mm and a dielectric relative permittivity of 21.4. On the two adjacent outer surfaces of the dielectric resonator 2 (in this embodiment, the two outer surfaces The first metal patch 3 and the second metal patch 4 are pasted on the side (rear side and left side), and it can be seen that the transverse centerline of the first metal patch 3 and the transverse centerline of the second metal patch 4 Vertically, the first metal patch 3 and the second metal patch 4 are used to control the resonance frequency of the two resonance modes of the dielectric resonator 2, wherein the first metal patch 3 controls the resonance frequency of the TM120 mode, and the second The metal patch 4 controls the resonant frequency of the TM210 mode;
所述介质谐振器2在两个谐振模式(TM120模式和TM210模式)的磁场分布交加处贴有第三金属贴片5;介质谐振器2的前侧面和右侧面相交处和介质谐振器2的后侧面和左侧面相交处都是两个谐振模式的磁场分布交加处,由于本实施例的第一金属贴片3位于后侧面,第二金属贴片4位于左侧面,因此将第三金属贴片5贴在介质谐振器2的前侧面和右侧面相交处,所述第三金属贴片5用于控制介质谐振器2两个谐振模式之间的耦合强度;The dielectric resonator 2 is pasted with a third metal patch 5 at the intersection of the magnetic field distributions of the two resonant modes (TM120 mode and TM210 mode); The intersection of the rear side and the left side of the back side is the intersection of the magnetic field distribution of the two resonant modes. Since the first metal patch 3 in this embodiment is located on the back side, and the second metal patch 4 is located on the left side, the second metal patch 4 is located on the left side, so the first Three metal patches 5 are pasted at the intersection of the front side and the right side of the dielectric resonator 2, and the third metal patch 5 is used to control the coupling strength between the two resonance modes of the dielectric resonator 2;
所述腔体1在与第一金属贴片3相对的位置上设有第一端口,所述第一端口处设有第一同轴线6,且第一端口与介质谐振器2之间设有第一金属环7,所述第一金属环7的一端接第一同轴线6的内导体,另一端接腔体1的底面;所述第一金属环7用于控制第一端口与激励的谐振模式(TM120模式)之间的耦合强度,即端耦合强度;The cavity 1 is provided with a first port at a position opposite to the first metal patch 3, a first coaxial line 6 is provided at the first port, and a first port and the dielectric resonator 2 are provided with The first metal ring 7, one end of the first metal ring 7 is connected to the inner conductor of the first coaxial line 6, and the other end is connected to the bottom surface of the cavity 1; the first metal ring 7 is used to control the resonance between the first port and the excitation The coupling strength between modes (TM120 mode), that is, the end coupling strength;
所述腔体1在与第二金属贴片4相对的位置上设有第二端口,所述第二端口处设有第二同轴线8,且第二端口与介质谐振器2之间设有第二金属环9,所述第二金属环9的一端接第二同轴线8的内导体,另一端接腔体1的底面;所述第二金属环9用于控制第二端口与激励的谐振模式(TM210模式)之间的耦合强度,即端耦合强度。The cavity 1 is provided with a second port at a position opposite to the second metal patch 4, a second coaxial line 8 is provided at the second port, and a second port is provided between the second port and the dielectric resonator 2. There is a second metal ring 9, one end of the second metal ring 9 is connected to the inner conductor of the second coaxial line 8, and the other end is connected to the bottom surface of the cavity 1; the second metal ring 9 is used to control the second port and the excitation The coupling strength between the resonant modes (TM210 mode), that is, the end coupling strength.
所述第一端口和第二端口可以作为输入端口,也可以作为输出端口。The first port and the second port can be used as input ports or output ports.
本实施例的介质双模带通滤波器设计的分析过程如下:The analysis process of the design of the dielectric dual-mode bandpass filter of the present embodiment is as follows:
1)在腔体1的中心位置放置一个介质谐振器2,且介质谐振器2的上、下两端都是和腔体1直接相接的,如图3所示;采用的两个简并模式称为TM120模式和TM210模式,两个谐振模式的磁场分布如图4和图5所示。1) A dielectric resonator 2 is placed in the center of the cavity 1, and the upper and lower ends of the dielectric resonator 2 are directly connected to the cavity 1, as shown in Figure 3; two degenerate The modes are called TM120 mode and TM210 mode, and the magnetic field distributions of the two resonant modes are shown in Figure 4 and Figure 5.
2)通过在介质谐振器2的外侧面贴金属贴片,可以实现对谐振模式的谐振频率控制,金属贴片可以为圆形金属贴片、环形金属贴片或多边形金属贴片,本实施例以圆形金属贴片进行说明,本实施例在介质谐振器2的后侧面贴有第一金属贴片3,如图6所示;通过调节第一金属贴片3的尺寸,可以控制相应谐振模式的谐振频率,如图7所示,第一金属贴片3可以控制TM120模式的谐振频率,随着第一金属贴片3的尺寸增大,这里体现为半径(TM120_r)增大,TM120模式的谐振频率快速下降,而TM210模式的谐振频率则基本不变;根据结构的对称性,若将金属贴片放置在相邻的平面上,如图8所示,本实施例在介质谐振器2的左侧面贴有第二金属贴片4,则可以控制TM210模式的谐振频率,如图9所示,随着第二金属贴片4半径(TM210_r)的增加,TM210模式的谐振频率减小而TM120模式的谐振频率不变。2) By affixing a metal patch on the outer surface of the dielectric resonator 2, the resonance frequency control of the resonance mode can be realized. The metal patch can be a circular metal patch, an annular metal patch or a polygonal metal patch. In this embodiment A circular metal patch is used for illustration. In this embodiment, a first metal patch 3 is pasted on the rear side of the dielectric resonator 2, as shown in FIG. 6; by adjusting the size of the first metal patch 3, the corresponding resonance can be controlled. The resonant frequency of the mode, as shown in Figure 7, the first metal patch 3 can control the resonant frequency of the TM120 mode, as the size of the first metal patch 3 increases, this is reflected in the increase of the radius (TM120_r), and the TM120 mode The resonant frequency of the TM210 mode drops rapidly, while the resonant frequency of the TM210 mode basically remains unchanged; according to the symmetry of the structure, if the metal patch is placed on the adjacent plane, as shown in Figure 8, this embodiment is in the dielectric resonator 2 If there is a second metal patch 4 attached to the left side, the resonant frequency of the TM210 mode can be controlled, as shown in Figure 9, as the radius of the second metal patch 4 (TM210_r) increases, the resonant frequency of the TM210 mode decreases The resonant frequency of the TM120 mode remains unchanged.
3)通过在两个谐振模式的磁场分布交加处,贴金属贴片,可以控制这两个谐振模式的耦合强度,金属贴片可以为圆形金属贴片或多边形金属贴片,本实施例以矩形金属贴片进行说明,在介质谐振器2两个谐振频率的磁场分布交加处贴有第三金属贴片5,如图10所示,本实施例的第三金属贴片5位于介质谐振器2的前侧面和右侧面相交处;第三金属贴片5控制TM120模式和TM210模式之间的耦合强度,如图11所示,随着矩形金属贴片的尺寸增加,这里体现为宽度(patch_w)增加,两个谐振模式的耦合系数(coupling coefficient)也随之增加。3) By affixing a metal patch at the intersection of the magnetic field distributions of the two resonant modes, the coupling strength of the two resonant modes can be controlled. The metal patch can be a circular metal patch or a polygonal metal patch. In this embodiment, Rectangular metal patch for illustration, a third metal patch 5 is pasted at the intersection of the magnetic field distributions of the two resonant frequencies of the dielectric resonator 2, as shown in Figure 10, the third metal patch 5 of this embodiment is located in the dielectric resonator 2 at the intersection of the front side and the right side; the third metal patch 5 controls the coupling strength between the TM120 mode and the TM210 mode, as shown in Figure 11, as the size of the rectangular metal patch increases, this is reflected in the width ( patch_w) increases, the coupling coefficient of the two resonant modes also increases.
4)为了实现端耦合,激励出第一个模式,这里采用的方法是金属环耦合,即磁耦合;磁耦合的方法,金属环必须垂直于想要激励起的谐振模式的磁场分布,金属环可以是圆环或矩形环,本实施例以矩形环进行说明;如图12所示,在第一端口与介质谐振器2之间设置第一金属环7,第一金属环7的一端接第一同轴线6的内导体,另一端接在腔体1的底面,第一金属环7激励出来的模式是TM120模式,第一金属环7的面积控制端耦合强度,这里用外部Q值(品质因数)体现,随着第一金属环7面积的增大,这里体现为第一金属环7的宽度(port-ring_w)增加,外部Q值随着减小,如图13所示(图中的图形省略了第一同轴线6的内导体和第一金属环7的厚度),这说明了第一金属环7的面积越大,端耦合越强,可以实现的通带带宽越宽。4) In order to achieve end coupling and excite the first mode, the method used here is metal ring coupling, that is, magnetic coupling; the method of magnetic coupling, the metal ring must be perpendicular to the magnetic field distribution of the resonant mode to be excited, the metal ring It can be a circular ring or a rectangular ring. This embodiment uses a rectangular ring for illustration; as shown in FIG. The inner conductor of the coaxial line 6, the other end is connected to the bottom surface of the cavity 1, the mode excited by the first metal ring 7 is the TM120 mode, the area of the first metal ring 7 controls the coupling strength of the end, and the external Q value (quality factor), as the area of the first metal ring 7 increases, here it is reflected that the width (port-ring_w) of the first metal ring 7 increases, and the external Q value decreases, as shown in Figure 13 (the The figure omits the inner conductor of the first coaxial line 6 and the thickness of the first metal ring 7), which shows that the larger the area of the first metal ring 7, the stronger the end coupling, and the wider the passband bandwidth that can be achieved.
同理,为了激励出第二个模式,在第一端口与介质谐振器2之间设置第二金属环9,第二金属环9的一端接第二同轴线8的内导体,另一端接在腔体1的底面,第二金属环9激励出来的模式是TM210模式,端耦合强度的控制同第一金属环7。Similarly, in order to excite the second mode, a second metal ring 9 is provided between the first port and the dielectric resonator 2, one end of the second metal ring 9 is connected to the inner conductor of the second coaxial line 8, and the other end is connected to On the bottom of the cavity 1 , the mode excited by the second metal ring 9 is the TM210 mode, and the control of the end coupling strength is the same as that of the first metal ring 7 .
5)在上述1)~4)的分析下,可以通过金属贴片技术控制谐振模式的谐振频率,和谐振模式之间的耦合系数,同时利用金属环耦合控制外部Q值,于是可以设计出本实施例的介质双模带通滤波器,如图1和图2所示,介质双模带通滤波器的S参数响应结果如图14所示(图中S11参数是指输入端口的回波损耗,S21参数是指输入端口到输出端口的正向传输系数)。5) Under the analysis of the above 1) ~ 4), the resonant frequency of the resonant mode and the coupling coefficient between the resonant modes can be controlled by the metal patch technology, and the external Q value can be controlled by the metal ring coupling, so the design of this The dielectric dual-mode bandpass filter of the embodiment, as shown in Figure 1 and Figure 2, the S parameter response result of the dielectric dual-mode bandpass filter is as shown in Figure 14 (in the figure S11 parameter refers to the return loss of the input port , the S21 parameter refers to the forward transfer coefficient from the input port to the output port).
实施例2:Example 2:
本实施例基于两个上述实施例1的介质双模带通滤波器,利用如图15(图中S表示源端,L表示负载端,1~4分别表示模式1~4)所示的四阶线性拓扑结构,可以设计线性拓扑结构双模双腔介质带通滤波器,如图16所示,其中模式2和模式3的耦合方式是通过闭合金属环实现模式耦合,金属环尺寸(宽度ring_w、高度ring_h)控制耦合系数的大小,如图17所示;线性拓扑结构双模双腔介质带通滤波器的S参数响应如图18所示,从图中可以看到,在带宽2634MHz-2698MHz,通带回波损耗在-15.6dB以下。This embodiment is based on the two dielectric dual-mode bandpass filters of the above-mentioned embodiment 1, using the four-mode filter as shown in Figure 15 (S in the figure represents the source end, L represents the load end, and 1 to 4 represent modes 1 to 4, respectively). order linear topology, a linear topology dual-mode dual-cavity dielectric bandpass filter can be designed, as shown in Figure 16, where the coupling method of mode 2 and mode 3 is to achieve mode coupling through a closed metal ring, and the size of the metal ring (width ring_w , height ring_h) to control the size of the coupling coefficient, as shown in Figure 17; the S parameter response of the linear topology dual-mode dual-cavity dielectric bandpass filter is shown in Figure 18, as can be seen from the figure, in the bandwidth of 2634MHz-2698MHz , The passband return loss is below -15.6dB.
实施例3:Example 3:
本实施例基于四个上述实施例1的介质双模带通滤波器,利用图19(图中S表示源端,L表示负载端,1~8分别表示模式1~8)所示的八阶线性拓扑结构,可以设计线性拓扑结构双模四腔介质带通滤波器,如图20所示,其中模式2和模式3、模式4和模式5、模式6和模式7的耦合方式是通过闭合金属环实现模式耦合,金属环尺寸控制耦合系数的大小;线性拓扑结构双模四腔介质带通滤波器的S参数响应如图21所示,从图中可以看到,在带宽2632MHz-2699MHz,通带回波损耗在-12.2dB以下。This embodiment is based on the four dielectric dual-mode bandpass filters of Embodiment 1 above, using the eighth-order Linear topology, a linear topology dual-mode four-cavity dielectric bandpass filter can be designed, as shown in Figure 20, where the coupling methods of mode 2 and mode 3, mode 4 and mode 5, mode 6 and mode 7 are through closed metal The ring realizes mode coupling, and the size of the metal ring controls the size of the coupling coefficient; the S-parameter response of the linear topology dual-mode four-cavity dielectric bandpass filter is shown in Figure 21. It can be seen from the figure that in the bandwidth of 2632MHz-2699MHz, the pass With return loss below -12.2dB.
实施例4:Example 4:
本实施例基于两个上述实施例1的介质双模带通滤波器,利用如图22(图中S表示源端,L表示负载端,1~4分别表示模式1~4)所示的四阶交叉拓扑结构,可以设计交叉拓扑结构双模双腔介质带通滤波器,如图23所示,其中模式2和模式3通过闭合金属环实现模式耦合,金属环尺寸控制耦合系数的大小;另外模式2和模式3还通过探针引入电耦合,从而实现交叉耦合,引入两个异侧传输零点,其中电耦合结构如图24所示,两端的金属没有接地,中间的金属柱起支撑作用,电耦合强度的大小受两个因素控制,一个是两端金属的长度,另一个是整个电耦合结构与相邻介质谐振器之间的距离;交叉型双模双腔介质带通滤波器的S参数响应如图25所示,从图中可以看到,在带宽2638MHz-2701MHz,通带回波损耗在-13.6dB以下。This embodiment is based on the two dielectric dual-mode bandpass filters of the above-mentioned embodiment 1, using the four-mode filter as shown in Figure 22 (S in the figure represents the source end, L represents the load end, and 1 to 4 represent modes 1 to 4, respectively). order crossover topology, a crossover topology dual-mode dual-cavity dielectric bandpass filter can be designed, as shown in Figure 23, in which mode 2 and mode 3 achieve mode coupling through a closed metal ring, and the size of the metal ring controls the size of the coupling coefficient; in addition Mode 2 and Mode 3 also introduce electrical coupling through probes to achieve cross-coupling and introduce two opposite-side transmission zeros. The electrical coupling structure is shown in Figure 24. The metal at both ends is not grounded, and the metal column in the middle acts as a support. The size of the electrical coupling strength is controlled by two factors, one is the length of the metal at both ends, and the other is the distance between the entire electrical coupling structure and the adjacent dielectric resonator; the S of the cross-type dual-mode dual-cavity dielectric bandpass filter The parameter response is shown in Figure 25. It can be seen from the figure that, in the bandwidth of 2638MHz-2701MHz, the passband return loss is below -13.6dB.
实施例5:Example 5:
本实施例基于四个上述实施例1的介质双模带通滤波器,利用如图26(图中S表示源端,L表示负载端,1~8分别表示模式1~8)所示的八阶交叉拓扑结构,可以设计交叉拓扑结构双模四腔介质带通滤波器,如图27所示,其中模式2和模式3、模式4和模式5、模式6和模式7通过闭合金属环实现模式耦合,金属环尺寸控制耦合系数的大小;另外模式3和模式6还通过探针引入电耦合,从而实现交叉耦合,引入两个异侧传输零点,其中电耦合结构如图28所示,两端的金属没有接地,中间的金属柱起支撑作用,电耦合强度的大小受两个因素控制,一个是两端金属的长度,另一个是整个电耦合结构与相邻介质谐振器之间的距离;交叉型双模四腔介质带通滤波器的S参数响应如图29所示,从图中可以看到,在带宽2636MHz-2694MHz,通带回波损耗在-14.2dB以下。This embodiment is based on the four dielectric dual-mode bandpass filters of the above-mentioned embodiment 1, using the eight-mode filter as shown in Figure 26 (in the figure, S represents the source end, L represents the load end, and 1 to 8 represent modes 1 to 8 respectively). order crossover topology, a crossover topology dual-mode four-cavity dielectric bandpass filter can be designed, as shown in Figure 27, in which mode 2 and mode 3, mode 4 and mode 5, mode 6 and mode 7 are realized by closed metal rings Coupling, the size of the metal ring controls the size of the coupling coefficient; in addition, mode 3 and mode 6 also introduce electrical coupling through the probe to achieve cross-coupling and introduce two transmission zeros on opposite sides. The electrical coupling structure is shown in Figure 28. The metal is not grounded, and the metal pillar in the middle acts as a support. The strength of the electrical coupling is controlled by two factors, one is the length of the metal at both ends, and the other is the distance between the entire electrical coupling structure and the adjacent dielectric resonator; the cross The S-parameter response of the dual-mode four-cavity dielectric bandpass filter is shown in Figure 29. It can be seen from the figure that the passband return loss is below -14.2dB in the bandwidth of 2636MHz-2694MHz.
实施例6:Embodiment 6:
本实施例的主要特点是:所述腔体还可以为圆柱腔体或除矩形外的多边形腔体,所述介质谐振器还可以为盘形介质谐振器、柱形介质谐振器或除矩形外的多边形介质谐振器。The main features of this embodiment are: the cavity can also be a cylindrical cavity or a polygonal cavity other than a rectangle, and the dielectric resonator can also be a disk-shaped dielectric resonator, a cylindrical dielectric resonator, or a cavity other than a rectangle. polygonal dielectric resonator.
综上所述,本发明创新性地提出了金属贴片技术对谐振模式的频率控制,以及金属贴片技术对模式之间的耦合强度控制,该贴片技术填补了目前介质多模滤波器技术研究的部分空白,极大程度地减小了介质谐振器的加工难度和加工成本。此外,利用介质双模带通滤波器和平面拓扑结构可以设计多阶多腔带通滤波器,可以实现更高带外抑制,更高通带矩形度等高性能带通滤波器指标;同时,平面拓扑结构可以实现路径的交叉耦合,引入传输零点,更进一步提高滤波器的性能,由于设计出的多阶多腔带通滤波器可以有很多款(上述实施例2~5),能够更好地满足现有无线通信系统的应用。In summary, the present invention innovatively proposes the frequency control of the resonant mode by the metal patch technology, and the control of the coupling strength between the modes by the metal patch technology. This patch technology fills the current dielectric multimode filter technology Part of the research is blank, which greatly reduces the processing difficulty and processing cost of the dielectric resonator. In addition, a multi-order multi-cavity bandpass filter can be designed using a dielectric dual-mode bandpass filter and a planar topology, which can achieve higher out-of-band rejection, higher passband squareness and other high-performance bandpass filter indicators; at the same time, the planar The topology structure can realize the cross-coupling of paths, introduce transmission zeros, and further improve the performance of the filter. Since the designed multi-order multi-cavity bandpass filter can have many types (the above-mentioned embodiments 2-5), it can better It satisfies the application of the existing wireless communication system.
以上所述,仅为本发明专利较佳的实施例,但本发明专利的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明专利所公开的范围内,根据本发明专利的技术方案及其发明构思加以等同替换或改变,都属于本发明专利的保护范围。The above is only a preferred embodiment of the patent of the present invention, but the scope of protection of the patent of the present invention is not limited thereto. Equivalent replacements or changes to the technical solutions and their inventive concepts all fall within the scope of protection of the invention patent.
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103094646A (en) * | 2013-01-25 | 2013-05-08 | 上海交通大学 | Substrate integration waveguide load dielectric resonator filter |
CN104767016A (en) * | 2015-03-31 | 2015-07-08 | 南通大学 | Differential band-pass filter based on TE01delta mode dielectric resonators |
CN204834808U (en) * | 2015-07-31 | 2015-12-02 | 华南理工大学 | Dielectric dual-mode bandpass filter based on patch structure |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103094646A (en) * | 2013-01-25 | 2013-05-08 | 上海交通大学 | Substrate integration waveguide load dielectric resonator filter |
CN104767016A (en) * | 2015-03-31 | 2015-07-08 | 南通大学 | Differential band-pass filter based on TE01delta mode dielectric resonators |
CN204834808U (en) * | 2015-07-31 | 2015-12-02 | 华南理工大学 | Dielectric dual-mode bandpass filter based on patch structure |
Non-Patent Citations (2)
Title |
---|
"Dual-Mode Filters with Conductor-Loaded Dielectric Resonators";Ian C.Hunter et al;《IEEE TRANSACTION ON MICROWAVE THEORY AND TECHNIQUES》;19991231;第47卷(第12期);全文 * |
"Ultra-compact pseudoelliptic Waveguide Filters Using TM Dual-mode Dielectric Resonators";Luca Pelliccia et al;《Microwave Conference Proceedings(APMC),2011 Asia-Pacific》;20111208;全文 * |
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