CN105070643B - A kind of preparation method of amorphous conductive carbon film - Google Patents

Abstract

The invention discloses a kind of preparation method of amorphous conductive carbon film, prepared using evaporation instrument, at room temperature, carbon rope is fixed on evaporation source, then substrate is put on substrate supporting spring and fixed, the electric current of regulation evaporation instrument is to 40~50A, it is deposited, carbon fracture of rope, then stops evaporation, after cooling, amorphous conductive carbon film is produced.The present invention carries out the preparation of amorphous conductive carbon film using instrument is deposited, it is not necessary to complicated, expensive equipment, and preparation technology is easy, technological parameter is easily controllable, can greatly reduce production cost；In addition, the inventive method can prepare the preferable amorphous conductive carbon film of film quality under different substrates and different deposition atmospheres.

Description

A kind of preparation method of amorphous conductive carbon film

technical field

The invention belongs to the technical field of microelectronic thin film materials, and in particular relates to a preparation method of an amorphous conductive carbon film.

Background technique

With the development of the semiconductor industry, reducing the size of devices has become the focus and difficulty of the semiconductor industry. Therefore, nanoelectronics, which further reduces the size of devices, has received extensive attention from the scientific community; carbon materials are the mainstream materials for nanoelectronic devices. , and its frequency range, electrical and thermal properties are excellent.

At present, graphene, graphene oxide, and carbon nanotubes are common carbon materials; amorphous carbon film is a new type of carbon material used in the preparation of nanoelectronic devices, and has attracted much attention because of its good physical and chemical properties. However, in actual production, the preparation of amorphous carbon thin films has complex processes, difficult control of process parameters, and the need to use expensive instruments and equipment in the preparation process, resulting in high production costs.

Contents of the invention

The purpose of the present invention is to provide a method for preparing an amorphous carbon film, which solves the problems of complex process, difficult control of process parameters, expensive equipment and high production cost in the preparation process of the existing amorphous carbon film.

The technical scheme adopted in the present invention is, a kind of preparation method of amorphous conductive carbon film, adopts evaporation apparatus to prepare, and specific process is:

Step 1, at room temperature, fix the carbon rope on the evaporation source, and then place the cleaned substrate on the substrate holder and fix it;

Step 2, turn on the power of the vapor deposition apparatus, adjust the current of the vapor deposition apparatus to 40-50A, conduct vapor deposition, stop the vapor deposition after the carbon rope breaks, and obtain an amorphous conductive carbon film after cooling.

The present invention is also characterized in that,

In step 1, the carbon rope is made of graphite fibers with a purity of 99% and a diameter of 2 mm, and the length of the carbon rope is 1 cm.

In step 1, the substrate is one of an amorphous silicon substrate, a Pt conductive substrate or an FTO conductive substrate.

In step 1, the cleaning process of the substrate is as follows: put the substrate in acetone for ultrasonic cleaning for 3-8 minutes, then put it in absolute ethanol for ultrasonic cleaning for 3-8 minutes, and finally rinse it with deionized water for 2-3 times.

In step 2, the evaporation environment is: under air atmosphere conditions, the vacuum degree is 1×10 ^-2 Pa; or under Ar atmosphere conditions, the vacuum degree is 5×10 ^-2 Pa; or under N ₂ atmosphere conditions, the vacuum degree is is 5×10 ^-2 Pa.

The beneficial effects of the present invention are that the preparation of the amorphous conductive carbon film by using a vapor deposition apparatus does not require complex and expensive equipment, and the preparation process is simple, the process parameters are easy to control, and the production cost can be greatly reduced; in addition, the method of the present invention The amorphous conductive carbon film with better film quality can be prepared under different substrates and different deposition atmospheres.

Description of drawings

Fig. 1 is the atomic force microscope microscopic topography figure of the amorphous conductive carbon film that embodiment 1 prepares;

Fig. 2 is the atomic force microscope microscopic topography figure of the amorphous conductive carbon film that embodiment 2 prepares;

Fig. 3 is the atomic force microscope microscopic topography figure of the amorphous conductive carbon film that embodiment 3 prepares;

Fig. 4 is the atomic force microscope microscopic topography figure of the amorphous conductive carbon film that embodiment 4 prepares;

FIG. 5 is an atomic force microscope microscopic topography diagram of the amorphous conductive carbon film prepared in Example 5. FIG.

detailed description

The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

Example 1

Step 1, at room temperature, fix a carbon rope with a length of 1 cm on the evaporation source, and then place the cleaned amorphous silicon substrate on a substrate holder; wherein, the carbon rope is made of a purity of 99% and a diameter of 2 The cleaning process of the substrate is as follows: put the substrate in acetone for ultrasonic cleaning for 3 minutes, then put it in absolute ethanol for ultrasonic cleaning for 3 minutes, and finally rinse it twice with deionized water.

Step 2, turn on the power of the vapor deposition apparatus, adjust the current of the vapor deposition apparatus to 40A, conduct vapor deposition in an environment with a vacuum of 1×10 ^-2 Pa under air atmosphere conditions, and stop vapor deposition after the carbon rope breaks, and cool down After that, an amorphous conductive carbon film with a thickness of 220 nm was obtained.

The atomic force microscope image of the amorphous conductive carbon film obtained in this embodiment is shown in Figure 1. It can be seen from the figure that the prepared amorphous carbon film surface is composed of a large number of particles with different sizes, the surface is flat, and the surface quality is high; The size is about 10nm, and the height is about 5nm; the surface root mean square roughness (RMS) of the sample analyzed by the software is 0.380nm.

Example 2

Step 1, at room temperature, fix a carbon rope with a length of 1 cm on the evaporation source, and then place the cleaned Pt conductive substrate on the substrate holder and fix it; wherein, the carbon rope has a purity of 99% and a diameter of 2 mm Made of graphite fibers; the cleaning process of the substrate is as follows: put the substrate in acetone for 5 minutes for ultrasonic cleaning, then put it in absolute ethanol for 5 minutes, and finally rinse it with deionized water for 3 times.

Step 2, turn on the power of the vapor deposition apparatus, adjust the current of the vapor deposition apparatus to 40A, conduct vapor deposition in an environment with a vacuum of 1×10 ^-2 Pa under air atmosphere conditions, and stop vapor deposition after the carbon rope breaks, and cool down After that, an amorphous conductive carbon film with a thickness of 200 nm was obtained.

The atomic force microscope image of the amorphous conductive carbon film obtained in this example is shown in Figure 2. It can be seen from the figure that the surface of the prepared amorphous carbon film is composed of a large number of particles of different sizes, and the surface is smooth and of high surface quality. The particle size is between 100nm and the height is about 10nm; the surface root mean square roughness (RMS) of the amorphous carbon film sample is 1.645nm.

Example 3

Step 1, at room temperature, fix a carbon rope with a length of 1 cm on the evaporation source, and then place the cleaned FTO conductive substrate on the substrate holder and fix it; wherein, the carbon rope has a purity of 99% and a diameter of 2 mm Made of graphite fibers; the cleaning process of the substrate is as follows: put the FTO conductive substrate in acetone for 8 minutes, then put it in absolute ethanol for 8 minutes, and finally rinse it with deionized water for 3 times.

Step 2, turn on the power of the vapor deposition apparatus, adjust the current of the vapor deposition apparatus to 50A, conduct vapor deposition in an environment with a vacuum of 1×10 ^-2 Pa under air atmosphere conditions, and stop the vapor deposition after the carbon rope breaks, and cool down After that, an amorphous conductive carbon film with a thickness of 210 nm was obtained.

The atomic force microscope image of the amorphous conductive carbon film obtained in this example is shown in Figure 3. It can be seen from the figure that the surface of the prepared amorphous carbon film is composed of a large number of particles of different sizes, the surface is smooth, and the surface quality is high. The particle size is between 200nm and the height is around 60nm. The surface root mean square roughness (RMS) of the amorphous carbon film sample is 2.213nm.

Example 4

Step 1, at room temperature, fix a carbon rope with a length of 1 cm on the evaporation source, and then place the cleaned amorphous silicon substrate on a substrate holder; wherein, the carbon rope is made of a purity of 99% and a diameter of 2 The cleaning process of the substrate is as follows: put the amorphous silicon substrate in acetone for 5 minutes for ultrasonic cleaning, then put it in absolute ethanol for 5 minutes, and finally rinse it with deionized water for 3 times.

Step 2, turn on the power supply of the vapor deposition apparatus, adjust the current of the vapor deposition apparatus to 50A, conduct vapor deposition in an environment with an Ar atmosphere and a vacuum of 5×10 ^-2 Pa, stop the vapor deposition after the carbon rope is broken, and cool down, That is, an amorphous conductive carbon film with a thickness of 190 nm was obtained.

The atomic force microscope image of the amorphous conductive carbon film obtained in this example is shown in Figure 4. It can be seen from the figure that the surface of the prepared amorphous carbon film is composed of a large number of particles of different sizes, and the surface is smooth and of high surface quality. The particle size is 100nm and the height is about 10nm. The surface root mean square roughness (RMS) of the amorphous carbon film sample is 1.706nm.

Example 5

Step 1, at room temperature, fix a carbon rope with a length of 1 cm on the evaporation source, and then place the cleaned amorphous silicon substrate on a substrate holder; wherein, the carbon rope is made of a purity of 99% and a diameter of 2 The cleaning process of the substrate is as follows: put the substrate into acetone for ultrasonic cleaning for 4 minutes, then put it into absolute ethanol for ultrasonic cleaning for 4 minutes, and finally rinse it twice with deionized water.

Step 2, turn on the power of the vapor deposition apparatus, adjust the current of the vapor deposition apparatus to 40A, conduct vapor deposition in an environment with a vacuum degree of 5×10 ^-2 Pa under the condition of _N2 atmosphere, stop the vapor deposition after the carbon rope breaks, and cool down After that, an amorphous conductive carbon film with a thickness of 200 nm was obtained.

The atomic force microscope image of the amorphous conductive carbon film obtained in this example is shown in Figure 5. It can be seen from the figure that the surface of the prepared amorphous carbon film is composed of a large number of particles of different sizes, and the surface is smooth and of high surface quality. The particle size is about 100nm and the height is about 50nm. The surface root mean square roughness (RMS) of the amorphous carbon film sample is 1.843nm.

Claims (3)

1. a preparation method of amorphous conductive carbon film is characterized in that, adopts vapor deposition instrument to prepare, and concrete process is: Step 1. At room temperature, fix the carbon rope on the evaporation source, and then place the cleaned substrate on the substrate holder to fix it. The carbon rope is made of graphite fibers with a purity of 99% and a diameter of 2 mm. The length of the carbon rope is is 1 cm; Step 2, turn on the power supply of the vapor deposition apparatus, adjust the current of the vapor deposition apparatus to 40-50A, and perform vapor deposition. After the carbon rope is broken, stop the vapor deposition, and after cooling, an amorphous conductive carbon film is obtained; The evaporation environment is: under the air atmosphere condition, the vacuum degree is 1×10 ^-2 Pa; or under the Ar atmosphere condition, the vacuum degree is 5×10 ^-2 Pa; or under the N2 atmosphere condition, the vacuum degree is 5×10 ^{- 2Pa} . 2. The preparation method of a kind of amorphous conductive carbon film according to claim 1, is characterized in that, in step 1, substrate is a kind of in amorphous silicon substrate, Pt conductive substrate or FTO conductive substrate. 3. The preparation method of a kind of amorphous conductive carbon film according to claim 1, characterized in that, in step 1, the cleaning process of the substrate is: put the substrate into acetone and ultrasonically clean it for 3-8 minutes, then put it into an Ultrasonic cleaning in water and ethanol for 3 to 8 minutes, and finally rinsed with deionized water for 2 to 3 times.