CN105017721B - Resin composition for insulating layer of printed wiring board - Google Patents
Resin composition for insulating layer of printed wiring board Download PDFInfo
- Publication number
- CN105017721B CN105017721B CN201510182552.3A CN201510182552A CN105017721B CN 105017721 B CN105017721 B CN 105017721B CN 201510182552 A CN201510182552 A CN 201510182552A CN 105017721 B CN105017721 B CN 105017721B
- Authority
- CN
- China
- Prior art keywords
- filling material
- inorganic filling
- resin
- resin combination
- strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 214
- 239000002245 particle Substances 0.000 claims abstract description 62
- 239000006185 dispersion Substances 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 218
- 238000011049 filling Methods 0.000 claims description 173
- 229920005989 resin Polymers 0.000 claims description 160
- 239000011347 resin Substances 0.000 claims description 160
- 239000003822 epoxy resin Substances 0.000 claims description 121
- 229920000647 polyepoxide Polymers 0.000 claims description 121
- 239000003795 chemical substances by application Substances 0.000 claims description 69
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 46
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 229910002026 crystalline silica Inorganic materials 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000002648 laminated material Substances 0.000 claims description 12
- 239000011229 interlayer Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 abstract description 73
- 230000008569 process Effects 0.000 abstract description 36
- 239000011256 inorganic filler Substances 0.000 abstract 5
- 229910003475 inorganic filler Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 description 66
- 238000001723 curing Methods 0.000 description 60
- -1 Si oxide Chemical compound 0.000 description 52
- 239000004020 conductor Substances 0.000 description 42
- 239000002313 adhesive film Substances 0.000 description 38
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 37
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 37
- 239000000126 substance Substances 0.000 description 33
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 25
- 238000009434 installation Methods 0.000 description 23
- 238000003475 lamination Methods 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 23
- 238000005259 measurement Methods 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 239000002966 varnish Substances 0.000 description 20
- 239000007787 solid Substances 0.000 description 19
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 17
- 238000007747 plating Methods 0.000 description 16
- 239000004593 Epoxy Substances 0.000 description 15
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 15
- 229940106691 bisphenol a Drugs 0.000 description 14
- 239000000243 solution Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 13
- 239000007788 liquid Substances 0.000 description 13
- 229920003986 novolac Polymers 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 150000002148 esters Chemical class 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 238000007788 roughening Methods 0.000 description 12
- 230000006641 stabilisation Effects 0.000 description 12
- 238000011105 stabilization Methods 0.000 description 12
- 238000013007 heat curing Methods 0.000 description 11
- 239000000047 product Substances 0.000 description 11
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 10
- 229920006287 phenoxy resin Polymers 0.000 description 10
- 239000013034 phenoxy resin Substances 0.000 description 10
- 238000005476 soldering Methods 0.000 description 10
- 239000004305 biphenyl Substances 0.000 description 9
- 235000010290 biphenyl Nutrition 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 229920001971 elastomer Polymers 0.000 description 9
- 150000002118 epoxides Chemical class 0.000 description 9
- 235000013824 polyphenols Nutrition 0.000 description 9
- 239000005060 rubber Substances 0.000 description 9
- 238000007711 solidification Methods 0.000 description 9
- 230000008023 solidification Effects 0.000 description 9
- 238000004381 surface treatment Methods 0.000 description 9
- 230000008961 swelling Effects 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 230000004520 agglutination Effects 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 8
- 125000003700 epoxy group Chemical group 0.000 description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- 239000007800 oxidant agent Substances 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 238000003825 pressing Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 229920005992 thermoplastic resin Polymers 0.000 description 7
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 239000003063 flame retardant Substances 0.000 description 6
- 239000011888 foil Substances 0.000 description 6
- 238000007731 hot pressing Methods 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 150000004780 naphthols Chemical class 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000000930 thermomechanical effect Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- KGSFMPRFQVLGTJ-UHFFFAOYSA-N 1,1,2-triphenylethylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(C=1C=CC=CC=1)CC1=CC=CC=C1 KGSFMPRFQVLGTJ-UHFFFAOYSA-N 0.000 description 5
- ZRYCRPNCXLQHPN-UHFFFAOYSA-N 3-hydroxy-2-methylbenzaldehyde Chemical compound CC1=C(O)C=CC=C1C=O ZRYCRPNCXLQHPN-UHFFFAOYSA-N 0.000 description 5
- 229930185605 Bisphenol Natural products 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 229940079593 drug Drugs 0.000 description 5
- 239000003814 drug Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000835 fiber Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- KAKZBPTYRLMSJV-UHFFFAOYSA-N butadiene group Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- 239000004643 cyanate ester Substances 0.000 description 4
- 230000006837 decompression Effects 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 238000009499 grossing Methods 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 125000001624 naphthyl group Chemical group 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000012766 organic filler Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- RMVRSNDYEFQCLF-UHFFFAOYSA-N phenyl mercaptan Natural products SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- 239000004962 Polyamide-imide Substances 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229920000180 alkyd Polymers 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000004567 concrete Substances 0.000 description 3
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000011120 plywood Substances 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920002312 polyamide-imide Polymers 0.000 description 3
- 229920002857 polybutadiene Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- CMLFRMDBDNHMRA-UHFFFAOYSA-N 2h-1,2-benzoxazine Chemical compound C1=CC=C2C=CNOC2=C1 CMLFRMDBDNHMRA-UHFFFAOYSA-N 0.000 description 2
- 238000004438 BET method Methods 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 229910000570 Cupronickel Inorganic materials 0.000 description 2
- HECLRDQVFMWTQS-UHFFFAOYSA-N Dicyclopentadiene Chemical compound C1C2C3CC=CC3C1C=C2 HECLRDQVFMWTQS-UHFFFAOYSA-N 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- AHZMUXQJTGRNHT-UHFFFAOYSA-N [4-[2-(4-cyanatophenyl)propan-2-yl]phenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1C(C)(C)C1=CC=C(OC#N)C=C1 AHZMUXQJTGRNHT-UHFFFAOYSA-N 0.000 description 2
- 239000011354 acetal resin Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000010426 asphalt Substances 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 229910021523 barium zirconate Inorganic materials 0.000 description 2
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 2
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 150000005690 diesters Chemical class 0.000 description 2
- 229940113088 dimethylacetamide Drugs 0.000 description 2
- 125000004185 ester group Chemical group 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 150000002440 hydroxy compounds Chemical class 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000011987 methylation Effects 0.000 description 2
- 238000007069 methylation reaction Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- ZTVBIGAFHCIAEU-UHFFFAOYSA-N phenol;1-phenylethanone Chemical group OC1=CC=CC=C1.OC1=CC=CC=C1.CC(=O)C1=CC=CC=C1 ZTVBIGAFHCIAEU-UHFFFAOYSA-N 0.000 description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920006380 polyphenylene oxide Polymers 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- 235000012222 talc Nutrition 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000004736 wide-angle X-ray diffraction Methods 0.000 description 2
- MEBONNVPKOBPEA-UHFFFAOYSA-N 1,1,2-trimethylcyclohexane Chemical group CC1CCCCC1(C)C MEBONNVPKOBPEA-UHFFFAOYSA-N 0.000 description 1
- OTEKOJQFKOIXMU-UHFFFAOYSA-N 1,4-bis(trichloromethyl)benzene Chemical compound ClC(Cl)(Cl)C1=CC=C(C(Cl)(Cl)Cl)C=C1 OTEKOJQFKOIXMU-UHFFFAOYSA-N 0.000 description 1
- BOKGTLAJQHTOKE-UHFFFAOYSA-N 1,5-dihydroxynaphthalene Chemical compound C1=CC=C2C(O)=CC=CC2=C1O BOKGTLAJQHTOKE-UHFFFAOYSA-N 0.000 description 1
- UVUMFIYMNNFHAV-UHFFFAOYSA-N 1-(3-bromo-7-methylindol-1-yl)ethanone Chemical compound C1=CC(C)=C2N(C(=O)C)C=C(Br)C2=C1 UVUMFIYMNNFHAV-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- DJOYTAUERRJRAT-UHFFFAOYSA-N 2-(n-methyl-4-nitroanilino)acetonitrile Chemical compound N#CCN(C)C1=CC=C([N+]([O-])=O)C=C1 DJOYTAUERRJRAT-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 1
- XOSCKTQMAZSFBZ-UHFFFAOYSA-N 2-[[1-[[2,7-bis(oxiran-2-ylmethoxy)naphthalen-1-yl]methyl]-7-(oxiran-2-ylmethoxy)naphthalen-2-yl]oxymethyl]oxirane Chemical compound C1OC1COC(C=C1C=2CC=3C4=CC(OCC5OC5)=CC=C4C=CC=3OCC3OC3)=CC=C1C=CC=2OCC1CO1 XOSCKTQMAZSFBZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- 229960000549 4-dimethylaminophenol Drugs 0.000 description 1
- ZYUVGYBAPZYKSA-UHFFFAOYSA-N 5-(3-hydroxybutan-2-yl)-4-methylbenzene-1,3-diol Chemical compound CC(O)C(C)C1=CC(O)=CC(O)=C1C ZYUVGYBAPZYKSA-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 108010054404 Adenylyl-sulfate kinase Proteins 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- LUOVRZJVUJQKIZ-UHFFFAOYSA-N C(C=1C(C(=O)OCCCCCCCC)=CC=CC1)(=O)OCCCCCCCC.C1=CC=CC2=CC=CC=C12 Chemical compound C(C=1C(C(=O)OCCCCCCCC)=CC=CC1)(=O)OCCCCCCCC.C1=CC=CC2=CC=CC=C12 LUOVRZJVUJQKIZ-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000013032 Hydrocarbon resin Substances 0.000 description 1
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 1
- 102000004895 Lipoproteins Human genes 0.000 description 1
- 108090001030 Lipoproteins Proteins 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910002666 PdCl2 Inorganic materials 0.000 description 1
- FFFPYJTVNSSLBQ-UHFFFAOYSA-N Phenolphthalin Chemical compound OC(=O)C1=CC=CC=C1C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 FFFPYJTVNSSLBQ-UHFFFAOYSA-N 0.000 description 1
- 101100410148 Pinus taeda PT30 gene Proteins 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 102100039024 Sphingosine kinase 1 Human genes 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- ORLQHILJRHBSAY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1(CO)CCCCC1 ORLQHILJRHBSAY-UHFFFAOYSA-N 0.000 description 1
- SIZDMAYTWUINIG-UHFFFAOYSA-N [4-[1-(4-cyanatophenyl)ethyl]phenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1C(C)C1=CC=C(OC#N)C=C1 SIZDMAYTWUINIG-UHFFFAOYSA-N 0.000 description 1
- MCEBKLYUUDGVMD-UHFFFAOYSA-N [SiH3]S(=O)=O Chemical compound [SiH3]S(=O)=O MCEBKLYUUDGVMD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 150000001335 aliphatic alkanes Chemical group 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- 239000004855 amber Substances 0.000 description 1
- 229920013822 aminosilicone Polymers 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical group 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-N anhydrous cyanic acid Natural products OC#N XLJMAIOERFSOGZ-UHFFFAOYSA-N 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 229950011260 betanaphthol Drugs 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- NHADDZMCASKINP-HTRCEHHLSA-N decarboxydihydrocitrinin Natural products C1=C(O)C(C)=C2[C@H](C)[C@@H](C)OCC2=C1O NHADDZMCASKINP-HTRCEHHLSA-N 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 229920006270 hydrocarbon resin Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229940100630 metacresol Drugs 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 210000001589 microsome Anatomy 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- GUVXZFRDPCKWEM-UHFFFAOYSA-N pentalene Chemical compound C1=CC2=CC=CC2=C1 GUVXZFRDPCKWEM-UHFFFAOYSA-N 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
- 229960001553 phloroglucinol Drugs 0.000 description 1
- DGUKXCVHOUQPPA-UHFFFAOYSA-N phosphoric acid tungsten Chemical compound [W].OP(O)(O)=O DGUKXCVHOUQPPA-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ODLMAHJVESYWTB-UHFFFAOYSA-N propylbenzene Chemical class CCCC1=CC=CC=C1 ODLMAHJVESYWTB-UHFFFAOYSA-N 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000003505 terpenes Chemical group 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
Landscapes
- Chemical & Material Sciences (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Insulating Materials (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Insulating Bodies (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Laminated Bodies (AREA)
Abstract
The invention provides a resin composition for an insulating layer of a printed wiring board, which exhibits good dispersion stability and appropriate melt viscosity, and can suppress warpage in a component mounting process. A resin composition for an insulating layer of a printed wiring board, wherein the content of an inorganic filler is 40 to 75% by volume based on 100% by volume of nonvolatile components in the resin composition, and the resin composition is represented by the formula: a ═ SR ρ/6[ in the formula, S represents the specific surface area of the inorganic filler (m)2(g), R represents the average particle diameter (. mu.m) of the inorganic filler, and ρ represents the density (g/cm) of the inorganic filler3)]The geometric parameter A of the represented inorganic filler material satisfies 20 < 6A < 40.
Description
Technical field
The present invention relates to the resin compositions for insulating layer of printed wiring board.
Background technique
Manufacturing technology as printed wiring board, it is known that submit using in internal substrate for lapped insulation layer and conductor layer
The manufacturing method of stack manner.In the manufacturing method using stack manner, insulation layers are such as by using containing resin combination
Resin composition layer is stacked on internal substrate and makes resin composition layer solidification to be formed by adhesive film of nitride layer etc..Exhausted
Resin combination used in the formation of edge layer, from reduce the thermal expansion coefficient of resulting insulating layer, prevent by insulating layer with
Crackle caused by the difference of the thermal expansion of conductor layer, circuit modifications generation from the point of view of, typically contain inorganic filling material.
As the inorganic filling material, it is suitble to use spherical inorganic filling material (patent document 1).
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2010-238667 bulletin.
Summary of the invention
With the soft solder reflux in recent years from leaded soft solder to the replacement of lead-free solder, in the installation procedure of component
(reflow) temperature is welded to increase.In addition in recent years, in order to realize the miniaturization of electronic equipment, carried out printed wiring board into one
Step slimming.
With the propulsion of the slimming of printed wiring board, printed wiring board is generated sometimes in the installation procedure of component
The problems such as poor contact of warpage, circuit modifications or component.The inventors of the present invention have found the inorganic fill material by using broken shape
Material replaces spherical inorganic filling material, can be with the warpage in the installation procedure of suppression component.But contain the inorganic of broken shape
Dispersion stabilization is poor sometimes for the resin combination of packing material, while being easy to return to high melt viscosity, causes lamination bad.
The subject of the invention is to provide show good dispersion stabilization and suitable melt viscosity, can inhibit component simultaneously
Installation procedure in warpage, the resin compositions for insulating layer of printed wiring board.
The inventors of the present invention have carried out the above subject to make great efforts research, as a result, it has been found that specific by using having for specified amount
The inorganic filling material of shape can solve the above subject, so as to complete the present invention.
That is, the present invention contains content below,
[1] resin combination is the resin compositions for insulating layer of printed wiring board, wherein
When nonvolatile component in resin combination is set as 100 volume %, the content of inorganic filling material is 40~75 bodies
Product %,
By formula: [in formula, S indicates the specific surface area (m of inorganic filling material for ρ/6 A=SR2/ g), R indicates inorganic fill material
The average grain diameter (μm) of material, ρ indicate the density (g/cm of inorganic filling material3)] indicate inorganic filling material geometry
Parameter A meets 20≤6A≤40;
[2] resin combination is the resin compositions for insulating layer of printed wiring board, wherein
When nonvolatile component in resin combination is set as 100 volume %, the content of inorganic filling material is 40~75 bodies
Product %,
By formula: B=Lc/L [in formula, L indicate as defined in inorganic filling material in section perimeter (μm), Lc indicate with
The sectional area of inorganic filling material in above-mentioned section is the perimeter (μm) of the positive round of homalographic] inorganic filling material that indicates
The average value of geometric shape parameters B is 0.8 or more and 0.9 or less;
[3] resin combination according to [1] or [2], wherein the Average crystallite diameter of inorganic filling material is 1800
Angstrom or less;
[4] resin combination according to any one of [1]~[3], wherein the specific surface area of inorganic filling material is
3~10m2/g;
[5] resin combination according to any one of [1]~[4], wherein the average grain diameter of inorganic filling material is
4 μm or less;
[6] resin combination according to any one of [1]~[5], wherein the average grain diameter of inorganic filling material is
3 μm or less;
[7] resin combination according to any one of [1]~[6], wherein inorganic filling material is to make Average crystallite
Diameter is obtained by the tufted agglutinator dispersion of 1800 angstroms of crystallite particles below, and the maximum particle diameter of the tufted agglutinator is 20 μm
Below;
[8] resin combination according to any one of [1]~[7], wherein inorganic filling material contain crystallinity without
Machine packing material, when whole inorganic filling materials are set as 100 mass %, the content of the crystallinity inorganic filling material is 50 matter
Measure % or more;
[9] resin combination according to [8], wherein crystallinity inorganic filling material is crystalline silica;
[10] resin combination according to any one of [1]~[9], wherein further containing epoxy resin and admittedly
Agent;
[11] resin combination according to any one of [1]~[10], is interlayer insulating film resin combination;
[12] sheet laminated material contains the resin that the resin combination as described in any one of [1]~[11] is formed
Composition layer;
[13] printed wiring board contains the solidfied material shape of resin combination described in any one of utilization [1]~[11]
At insulating layer;
[14] semiconductor device contains printed wiring board described in [13].
The effect of invention
According to the present invention it is possible to provide the resin compositions for insulating layer of printed wiring board, good point can be shown
Stability and suitable melt viscosity are dissipated, while can inhibit the warpage in the installation procedure of component.
Specific embodiment
[resin compositions for insulating layer of printed wiring board]
Resin compositions for insulating layer (hereinafter also referred to as " the resin combination of the invention of printed wiring board of the invention
Object ") it is characterized in that, having containing specified amount is filled out with currently known spherical inorganic filling material, broken the inorganic of shape
Filling material is inorganic filling material of different shapes.
Inorganic filling material used in the present invention is different from spherical inorganic filling material, has angular shape.At this
Aspect, the inorganic filling material for being crushed shape have sharp angular shape, and inorganic filling material used in the present invention is slightly
With it is round on this point, have and the inorganic filling material of broken shape also different shape.
When being compared for projection of shape in the plane, with the spherical inorganic fill material that cannot clearly identify corner angle
Material is different, and inorganic filling material used in the present invention can positively identify corner angle.Wherein, " for projection in the plane
Shape can identify corner angle " refer to for projection of shape in the plane, it can recognize certain straight line or substantially straight line and straight with this
Line or substantially straight line have certain angle, θ (angle on the inside of projection of shape) and the straight line that connects or substantially straight line.About this
Inorganic filling material used in invention, the average value of the angle, θ are bigger compared with the inorganic filling material of broken shape.For example,
For inorganic filling material used in the present invention compared with the inorganic filling material of broken shape, the average value of the angle, θ is preferably 5 ° big,
It is more preferably 7.5 ° big, and then preferably big 10 °, 12.5 °, 15 °, 17.5 ° or 20 °.
Hereinafter, being joined using 2 geometric shape parameters (shape パ ラ メ ー タ), i.e. geometric shape parameters A and geometry
B is counted to illustrate the shape of inorganic filling material used in the present invention.It should be noted that geometric shape parameters A and geometry ginseng
Several B presence are the differences of the parameter as derived from three-dimensional method or the parameter as derived from two-dimensional method, but both right
In the parameter for the degree that the shape of inorganic filling material, expression deform compared with ball.
< geometric shape parameters A >
Geometric shape parameters A is indicated by following formula (1).
Formula (1): ρ/6 A=SR
[in formula,
Specific surface area (the m of S expression inorganic filling material2/ g),
R indicates the average grain diameter (μm) of inorganic filling material,
Density (the g/cm of ρ expression inorganic filling material3)]。
Consider that there are the system of multiple balls (hereinafter also referred to " ball model systems ").The average grain diameter of these balls
When (diameter) is R, the average surface area of existing multiple balls is by π R in ball model system2It indicates, average external volume is by π R3/
6 indicate.In addition, the average quality of existing multiple balls is by π ρ R in ball model system when the density of ball is ρ3/ 6 tables
Show.
Then, consider the system of the inorganic filling material with ball model system average external volume and equal density.If
There is the smallest surface area the fact based on object, the ball for same volume, then in the inorganic filling material
The average surface area of the inorganic filling material of volume present in system can use A π R2It indicates.Wherein, A is inorganic filling material
Geometric shape parameters, lower limit is 1 (the case where inorganic filling material is ball).In addition, if being based on and ball model
Be the condition of average external volume and equal density, then in the system of inorganic filling material existing volume inorganic filling material
Average quality can be by π ρ R3/ 6 indicate.Then, in the system of inorganic filling material, the specific surface area of inorganic filling material
S can use [in the system of inorganic filling material average surface area (the A π R of the inorganic filling material of existing volume2)]/[
Average quality (the π ρ R of the inorganic filling material of existing volume in the system of inorganic filling material3/ 6) it] indicates, is 6A/ (R
ρ).That is, the relational expression of S=6A/ (R ρ) is set up, when the formula is deformed for geometric shape parameters A, can be obtained above-mentioned formula
(1)。
Inorganic filling material used in the present invention is characterized in that the geometric shape parameters A indicated by above-mentioned formula (1) is full
Foot 20≤6A≤40.For the suitable range of geometric shape parameters A, it is described below.
The specific surface area S of the inorganic filling material needed when obtaining geometric shape parameters A can use BET method measurement.
Specifically, make to adsorb molecule known to occupied area liquid nitrogen at a temperature of be adsorbed on inorganic filling material sample, can be by
Its adsorbance acquires the specific surface area of inorganic filling material sample.As absorption occupied area known to molecule, be suitble to using nitrogen,
The inert gases such as helium.The specific surface area S of inorganic filling material can be used automatic specific area measuring device and be measured, as
The automatic specific area measuring device can enumerate such as (strain) マ ウ Application テ ッ Network system " Macsorb HM-1210 ".
In addition, the average grain diameter R of inorganic filling material can be dissipated by the laser diffraction-based on Michaelis (Mie) scattering theory
Method is penetrated to measure.Specifically, being made inorganic fill material using laser diffraction formula particle size distribution device with volume reference
The size distribution of material measures its median particle diameter as average grain diameter.Measurement sample preferably makes nothing using using ultrasonic wave
Sample made of machine packing material is dispersed in water.As laser diffraction formula particle size distribution device, can enumerate for example
(strain) Shimadzu Seisakusho Ltd. system " SALD2200 ", (strain) hole field make made " LA-500 ", " LA-750 ", " LA-950 ".
< geometric shape parameters B >
Geometric shape parameters B is indicated by following formula (2).
Formula (2): B=Lc/L
[in formula,
L indicates the perimeter (μm) of the inorganic filling material in defined section,
Lc indicates the perimeter (μm) with the positive round that the sectional area of the inorganic filling material in above-mentioned section is homalographic.].
Geometric shape parameters B is to be based on the positive round in figure of the same area to have the smallest perimeter the fact and lead
Parameter out is limited to 1 in the case where (in defined section, the cross sectional shape of inorganic filling material is positive round) thereon.
Geometric shape parameters B is the parameter set up for each particle of inorganic filling material, by inorganic for constituting
The sufficient amount of particle of packing material acquires geometric shape parameters B, can grasp related with the shape of inorganic filling material whole
The characteristic of body.In an embodiment of the invention, it for the sufficient amount of particle of composition inorganic filling material, acquires several
What form parameter B assigns characteristic to the shape of inorganic filling material according to its average value.In said embodiment, of the invention
Used in inorganic filling material be characterized in that, by above-mentioned formula (2) indicate geometric shape parameters B average value be 0.8 with
It is upper and 0.9 or less.For the OK range of the average value of geometric shape parameters B, it is described below.
Alternatively, in addition the sufficient amount of particle of composition inorganic filling material is acquired geometric shape parameters B, is based on
The value of resulting geometric shape parameters B can also grasp the distribution of shapes for constituting the particle of inorganic filling material.It is used in the present invention
Inorganic filling material in, the content of particle of the value less than 0.8 of the geometric shape parameters B indicated by above-mentioned formula (2) is usually
50 several % or less.In addition, in inorganic filling material used in the present invention, by the geometric shape parameters B of above-mentioned formula (2) expression
The content of particle of the value greater than 0.9 be usually 30 several % or less.For the OK range of these contents, it is described below.
In the perimeter L and the section of inorganic filling material being needed when obtaining geometric shape parameters B, in regulation section
Inorganic filling material sectional area, can by layer for using resin combination of the invention to be formed, carry out section sight
It examines to measure.In cross-section observation, it is suitble to use FIB-SEM set composite.It can be used by resulting FIB-SEM image
The image processing softwares such as (strain) Leica system " QWin V3 ", acquire the perimeter and area of the inorganic filling material being present in layer
(sectional area).As FIB-SEM set composite, such as SII Na ノ テ Network ノ ロ ジ ー (strain) system can be enumerated
“SMI3050SE”。
For Lc, as long as calculating the perimeter (circumference) with the positive round that the sectional area of resulting inorganic filling material is homalographic
?.
In one embodiment, resin combination of the invention is characterized in that, by resin combination it is non-volatile at
When being divided into 100 volume %, the content of inorganic filling material is 40~75 volume %, the inorganic fill material indicated by above-mentioned formula (1)
The geometric shape parameters A of material meets 20≤6A≤40 (hereinafter also referred to " resin combination of the 1st embodiment ").
It is important from the point of view of the resin combination for obtaining showing good dispersion stabilization and suitable melt viscosity
Be above-mentioned 6A value be 40 or less.In turn from the resin combination for obtaining showing good dispersion stabilization and melt viscosity
Angle considers that the value of above-mentioned 6A is preferably 39.8 or less, 39.6 or less, 39.4 or less, 39.2 or less, 39 or less, 38 or less, 37
Below, 36 or less, 35 or less, 34 or less, 33 or less, 32 or less, 31 or less or 30 or less.From the peace for being adequately suppressed component
From the point of view of warpage in dress process, it is important that the lower limit of above-mentioned 6A is 20 or more.From the peace that can further suppress component
From the point of view of filling the warpage in process, the lower limit value of above-mentioned 6A is preferably 21 or more, 22 or more or 23 or more.
In other embodiments, resin combination of the invention is characterized in that, by not waving in resin combination
It sends out into when being divided into 100 volume %, the content of inorganic filling material is 40~75 volume %, inorganic being filled out by what above-mentioned formula (2) indicated
The average value for filling the geometric shape parameters B of material is 0.8 or more the and 0.9 or less (hereinafter also referred to " resin of the 2nd embodiment
Composition ").
It is important from the point of view of the resin combination for obtaining showing good dispersion stabilization and suitable melt viscosity
Be geometric shape parameters B average value be 0.8 or more.And then from obtaining showing good dispersion stabilization and melt viscosity
From the point of view of resin combination, the average value of geometric shape parameters B is preferably 0.81 or more or 0.82 or more.From fully
From the point of view of warpage in the installation procedure of suppression component, it is important that the upper limit of the average value of geometric shape parameters B is 0.9
Below.From the point of view of the warpage in the installation procedure that can further suppress component, the average value of geometric shape parameters B it is upper
Limit preferably 0.89 or less, 0.88 or less, 0.87 or less, 0.86 or less or 0.85 or less.
No matter the difference of the 1st embodiment and the 2nd embodiment, from the warpage in the installation procedure of abundant suppression component
Angle, from the point of view of reducing the thermal expansion coefficient of resulting insulating layer sufficiently, by resin combination it is non-volatile at
When being divided into 100 volume %, the content of inorganic filling material is 40 volume % or more, preferably 42 volume % or more, more preferably 44
Volume % or more, and then preferably 46 volume % or more, so more preferably 48 volume % or more, particularly preferably 50 volume % with
Upper, 52 volume % or more, 54 volume % or more, 56 volume % or more, 58 volume % or more or 60 volume % or more.Use broken shape
When inorganic filling material, as the content of the inorganic filling material is got higher, there is the excessively raised tendency of melt viscosity.Relative to
This, used in the present invention, meets the inorganic filling material of specific geometric shape parameters condition, may be implemented good
Melt viscosity can improve content in turn simultaneously.Such as in resin combination of the invention, the content of the inorganic filling material
It can be improved to 62 volume % or more, 64 volume % or more, 66 volume % or more or 68 volume % or more.It is suitable molten from display is obtained
The angle of the resin combination of melt-viscosity, to obtain the small and dhering strength (peel strength) with conductor layer of surface roughness excellent
From the point of view of insulating layer, the upper limit of the content of the inorganic filling material is 75 volume % hereinafter, preferably 74 volume % are hereinafter, more
Preferably 73 volume % hereinafter, be preferably 72 volume % hereinafter, being more preferably 71 volume % in turn hereinafter, particularly preferably 70 in turn
Volume % or less.Particularly, implement resin composition layer and internal layer base using vacuum layer platen press in the manufacture of printed wiring board
In the case where the lamination of plate, the upper limit of the content of the inorganic filling material is suitably for 70 volume % or less.Inorganic filling material contains
Measure (volume %) can inorganic filling material used in the preparation based on resin combination quality and density and in resin group
Quality and the density of the nonvolatile component other than inorganic filling material used in the preparation of object are closed to calculate.
No matter the difference of the 1st embodiment and the 2nd embodiment, from obtaining showing that good dispersion stabilization and melting are viscous
From the point of view of the resin combination of degree, it is preferred that geometry in inorganic filling material, being indicated by above-mentioned formula (2)
The value of parameter B is lower less than the content of 0.8 particle.It is in inorganic filling material, by upper in resin combination of the invention
The content for stating particle of the value less than 0.8 of the geometric shape parameters B of formula (2) expression is usually 50 several % hereinafter, preferably 48
Number % hereinafter, more preferably 46 severals % hereinafter, in turn be preferably 44 several % hereinafter, in turn more preferably 42 several % or less or
40 several % or less.Particularly, the value of geometric shape parameters B be 0.75 particle below content be preferably 20 several % or less,
18 number % or less or 16 several % or less.
No matter the difference of the 1st embodiment and the 2nd embodiment, from the warpage in the installation procedure of abundant suppression component
Angle considers, it is preferred that the value of geometric shape parameters B in inorganic filling material, being indicated by above-mentioned formula (2) is greater than 0.9
Particle content it is lower.In resin combination of the invention, it is in inorganic filling material, by above-mentioned formula (2) indicate it is several
The content of particle of the value of what form parameter B greater than 0.9 is usually 30 severals % hereinafter, preferably 28 several % are hereinafter, more preferable
For 26 several % hereinafter, being in turn preferably 24 several % hereinafter, being more preferably 22 number % or less or 20 several % or less in turn.It is special
Not, the content for the particle that the value of geometric shape parameters B is 0.94 or more is preferably 6 several % or less, 4 several % or less, 2
Number % or less, 1 several % or less, 0.8 several % or less, 0.6 several % or less, 0.4 several % or less, 0.2 several % or less.
In resin combination of the invention, the material of inorganic filling material is not particularly limited, and can be enumerated for example
Silica, aluminium oxide, glass, cordierite, Si oxide, barium sulfate, barium carbonate, talcum, clay, mica powder, zinc oxide, water
Talcum, boehmite, aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesia, boron nitride, aluminium nitride, nitrogenized manganese, boric acid
Aluminium, strontium carbonate, strontium titanates, calcium titanate, magnesium titanate, bismuth titanates, titanium oxide, zirconium oxide, barium titanate, metatitanic acid barium zirconate, barium zirconate,
Calcium zirconate, basic zirconium phosphate and phosphoric acid tungsten wire array etc., silica is particularly suitable.Inorganic filling material can be used alone 1
Kind, two or more can also be applied in combination.When inorganic filling material of more than two kinds is applied in combination, as obtaining geometric form
Average grain diameter (R), specific surface area (S) and the density (ρ) needed when shape parameter A, it is mixed using resulting inorganic filling material respectively
Close average grain diameter, specific surface area and the density of object.
The average grain diameter (R) of inorganic filling material, from the point of view of the miniaturization of circuit layout, preferably 4 μm hereinafter,
More preferably 3.5 μm hereinafter, be preferably 3 μm or less in turn.The lower limit of the average grain diameter of inorganic filling material, from using resin group
It closes from the point of view of obtaining having suitable viscosity, operability good resin varnish when object forms resin varnish, preferably
0.01 μm or more, more preferably 0.03 μm or more, and then preferably 0.05 μm or more, and then more preferably 0.07 μm or more, it is special
It You Xuanwei not be 0.1 μm or more.
The specific surface area (S) of inorganic filling material is in terms of with the relationship of average grain diameter (R) and density (ρ), as long as meeting
Above-mentioned geometric shape parameters condition, is just not particularly limited.The specific surface area of inorganic filling material for example can for 3~
10m2The range of/g, preferably 3~8m2The range of/g.
It can be amorphism, crystalline any as long as inorganic filling material meets above-mentioned geometric shape parameters condition
Person.In one embodiment, resin combination of the invention contains crystallinity inorganic filling material.In inorganic filling material
The content of crystallinity inorganic filling material, when whole inorganic filling materials are set as 100 mass %, preferably 50 mass % with
On, more preferably 60 mass % or more, and then preferably 70 mass % or more, and then more preferably 80 mass % or more, particularly preferably
For 90 mass % or more, 92 mass % or more, 94 mass % or more, 96 mass % or more, 98 mass % or more or 99 mass % or more.
Inorganic filling material, which can be, to be removed the impurity unavoidably contained, is substantially made of crystallinity inorganic filling material.Institute
State in embodiment, the Average crystallite diameter of inorganic filling material be preferably 1800 angstroms () hereinafter, more preferably 1600 with
Under, and then preferably 1400 or less.The lower limit of the Average crystallite diameter is not particularly limited, typically 100 or more,
200 with first-class.The crystallite diameter of inorganic filling material can be used X-ray diffraction (XRD) device and be measured.As XRD
Device can enumerate such as (strain) リ ガ Network system " Multi FLEX ".
Wherein, as crystallinity inorganic filling material, it is preferable to use crystalline silica.
Meet the inorganic filling material of above-mentioned geometric shape parameters condition, such as can there will be sharp rib by utilization
Method that the surface of the inorganic filling material of the broken shape of angular shape is physically and/or chemically ground is heat-treated
Method etc., so that it is had circle slightly to prepare.Physical grinding and the method chemically ground are not particularly limited, and can make
With currently known any means.As the commercially available product of broken silica, for example imperial gloomy (strain) system " VX-SR " can be enumerated
Deng.
In addition, there is the nothing for suitably meeting above-mentioned geometric shape parameters condition in the inorganic oxide of natural output
Machine oxide.For example, natural two as the tufted agglutinator output that Average crystallite diameter is 1800 crystallite particles below
Silica (especially the maximum particle diameter of tufted agglutinator is 20 μm or less of situation), when preparing resin combination by dispersion
Operation, thus tufted agglutinator is unlocked, and meets above-mentioned geometric shape parameters condition.Therefore, in one embodiment, of the invention
Resin combination in the inorganic filling material that contains be characterized in that, make the micromeritics below of Average crystallite diameter 1800
The tufted agglutinator of son disperses and obtains, and the maximum particle diameter of the tufted agglutinator is 20 μm or less.As the native silicon dioxide
Commercially available product, such as Unimin society system " IMSIL A-8 ", " IMSIL A-10 ", " IMSIL A-15 ", " IMSIL can be enumerated
A-25 " etc..
Inorganic filling material used in resin combination of the invention is examined from the angle for improving dispersibility, moisture-proof
Consider, is preferably surface-treated with surface treating agent.As surface treating agent, can enumerate such as amino silicone methane series coupling agent,
Epoxy silane system coupling agent, hydrosulphonyl silane system coupling agent, silane series coupling agent, organic silazane hydride compounds, the coupling of titanate esters system
Agent.Surface treating agent can be used alone, two or more can also be applied in combination.As the commercially available product of surface treating agent,
Such as SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBM403 " (3- glycidoxypropyltrime,hoxysilane), SHIN-ETSU HANTOTAI's chemistry can be enumerated
Industrial (strain) system " KBM803 " (3-mercaptopropyi trimethoxy silane), SHIN-ETSU HANTOTAI's chemical industry (strain) make " KBE903 " (3- amino
Propyl-triethoxysilicane), SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBM573 " (N- phenyl -3- TSL 8330),
SHIN-ETSU HANTOTAI's chemical industry (strain) makes " SZ-31 " (hexamethyldisilazane) etc..
After the surface treatment for carrying out inorganic filling material, the per unit surface that is combined on the surface of inorganic filling material
Long-pending carbon amounts is preferably 0.05mg/m2More than, more preferably 0.08mg/m2More than, and then preferably 0.11mg/m2More than, in turn
More preferably 0.14mg/m2More than, particularly preferably 0.17mg/m2Above, 0.20mg/m2Above, 0.23mg/m2Above or
0.26mg/m2More than.The upper limit of the carbon amounts is preferably 1.00mg/m2Hereinafter, more preferably 0.75mg/m2Hereinafter, being preferably in turn
0.70mg/m2Hereinafter, being more preferably 0.65mg/m in turn2Below, 0.60mg/m2Below, 0.55mg/m2Below, 0.50mg/m2With
Under.
The carbon amounts of the per unit area combined on the surface of inorganic filling material can be calculated with following step.In table
An adequate amount of methyl ethyl ketone (MEK) as solvent is added in inorganic filling material after surface treatment, carries out ultrasonic washing.
Supernatant is removed, after keeping solid state component dry, the carbon amounts combined on the surface of inorganic filling material is measured using carbon analysis meter.
By the specific surface area with resulting carbon amounts divided by inorganic filling material, the per unit table combined in inorganic filling material is calculated
The carbon amounts of area.As carbon analysis meter, such as (strain) hole field can be enumerated and make made " EMIA-320V " etc..
Resin combination of the invention preferably contains thermosetting resin and curing agent in turn.As thermosetting resin, preferably
It is epoxy resin.Therefore in one embodiment, resin combination of the invention contains inorganic filling material, but also contains
Epoxy resin and curing agent.
Epoxy resin-
As epoxy resin, such as bisphenol A type epoxy resin, bisphenol f type epoxy resin, bisphenol S type epoxy can be enumerated
Resin, bisphenol AF type epoxy resin, dicyclopentadiene-type epoxy resin, tris phenol type epoxy, naphthol novolac type (Na Off ト ー
Le ノ ボ ラ ッ Network type) epoxy resin, novolac type (Off ェ ノ ー Le ノ ボ ラ ッ Network type) epoxy resin, tert-butyl-catechu
Phenol-type epoxy resin, naphthalene type epoxy resin, naphthol type epoxy resin, anthracene type epoxy resin, glycidyl group amine type epoxy resin,
Glycidyl esters type epoxy resin, Cresol formaldehyde type (Network レ ゾ ー Le ノ ボ ラ ッ Network type) epoxy resin, biphenyl type epoxy tree
Rouge, linear aliphatic epoxy resin, the epoxy resin with butadiene structure, alicyclic epoxy resin, hetero ring type epoxy resin,
Containing whorled epoxy resin, cyclohexanedimethanol type epoxy resin, naphthylene ether type epoxy, trihydroxy methyl type asphalt mixtures modified by epoxy resin
Rouge, tetraphenyl ethane type epoxy resin etc..Epoxy resin can be used alone, two or more can also be applied in combination.
Epoxy resin preferably comprises the epoxy resin in 1 molecule with 2 or more epoxy groups.Not by epoxy resin
When volatile ingredient is set as 100 mass %, preferably at least 50 mass % or more are the rings in 1 molecule with 2 or more epoxy groups
Oxygen resin.Wherein, the epoxy group in 1 molecule with 2 or more is preferably comprised and in the epoxy resin that 20 DEG C of temperature are liquid
(hereinafter referred to as " liquid-state epoxy resin ") and there is 3 or more epoxy groups in 1 molecule and be solid ring at 20 DEG C of temperature
Oxygen resin (hereinafter referred to as " solid epoxy resin ").As epoxy resin, by by liquid-state epoxy resin and solid epoxy resin
It is used in combination, it is available with excellent flexible resin combination.In addition, the breaking strength of the solidfied material of resin combination also mentions
It is high.
As liquid-state epoxy resin, preferably bisphenol A type epoxy resin, bisphenol f type epoxy resin, naphthalene type epoxy resin,
Glycidyl esters type epoxy resin, novolac type epoxy resin and the epoxy resin with butadiene structure, more preferably
Bisphenol A type epoxy resin, bisphenol f type epoxy resin and naphthalene type epoxy resin.It, can as the specific example of liquid-state epoxy resin
To enumerate " HP4032 ", " HP4032H ", " HP4032D ", " HP4032SS " (naphthalene type epoxy resin), Mitsubishi of DIC (strain) system
Learn " jER828EL " (bisphenol A type epoxy resin), " jER807 " (bisphenol f type epoxy resin), " jER152 " (line style of (strain) system
Phenol aldehyde type epoxy resin), Nippon Steel live aurification (strain) system " ZX1059 " (bisphenol A type epoxy resin and bisphenol F type epoxy tree
The melange of rouge), Na ガ セ ケ system テ ッ Network ス (strain) system " EX-721 " (glycidyl esters type epoxy resin), ダ イ セ
" PB-3600 " (epoxy resin with butadiene structure) of Le chemical industry (strain) system.They can be used alone,
Two or more can be applied in combination.
As solid epoxy resin, preferably 4 function naphthalene type epoxy resins, Cresol formaldehyde type epoxy resin, two rings penta 2
Ene-type epoxy resin, tris phenol type epoxy, naphthol type epoxy resin, biphenyl type epoxy resin, naphthylene ether type epoxy,
Anthracene type epoxy resin, bisphenol A type epoxy resin, tetraphenyl ethane type epoxy resin, more preferably 4 function naphthalene type epoxy resins,
Naphthol type epoxy resin, biphenyl type epoxy resin, naphthylene ether type epoxy, bisphenol A type epoxy resin, tetraphenyl ethane type
Epoxy resin.As the specific example of solid epoxy resin, " HP-4700 ", " HP-4710 " (4 of DIC (strain) system can be enumerated
Function naphthalene type epoxy resin), " N-690 " (Cresol formaldehyde type epoxy resin), " N-695 " (Cresol formaldehyde type epoxy resin),
" HP-7200 " (dicyclopentadiene-type epoxy resin), " EXA7311 ", " EXA7311-G3 ", " EXA7311-G4 ", " EXA7311-
" EPPN-502H " (triphenol type asphalt mixtures modified by epoxy resin that G4S ", " HP6000 " (naphthylene ether type epoxy), Japanese chemical drug (strain) are made
Rouge), " NC7000L " (naphthol novolac type epoxy resin), " NC3000H ", " NC3000 ", " NC3000L ", " NC3100 " (biphenyl
Type epoxy resin), Nippon Steel live aurification (strain) system " ESN475V " (naphthol type epoxy resin), " ESN485 " (naphthol novolac
Type epoxy resin), Mitsubishi Chemical's (strain) system " YX4000H ", " YL6121 " (biphenyl type epoxy resin), " YX4000HK " (connection
Diformazan phenolic (ビ キ シ レ ノ ー Le type) epoxy resin), " YX8800 " (anthracene type epoxy resin), Osaka ガ ス ケ ミ カ Le
" YL7800 " (fluorenes type epoxy resin), the Mitsubishi Chemical's (strain) that " PG-100 " of (strain) system, " CG-500 ", Mitsubishi Chemical's (strain) make
" jER1010 " (solid-state bisphenol A type epoxy resin resin), " jER1031S " (the tetraphenyl ethane type epoxy resin) etc. of system.
As epoxy resin, by liquid-state epoxy resin and solid epoxy resin and used time, preferably their usage ratio (liquid
State epoxy resin: solid epoxy resin) it is by quality ratio the range of 1:0.1~1:4.By making liquid-state epoxy resin and solid-state
The usage ratio of epoxy resin is the range, available following effects: band when i) being used in the form of sheet laminated material
Carry out suitable cementability;Ii) in the form of sheet laminated material using when sufficient flexible, operability can be obtained improve;And
Iii the solidfied material etc. with sufficient breaking strength can) be obtained.From it is above-mentioned i)~iii) effect from the point of view of, liquid ring
The usage ratio (liquid-state epoxy resin: solid epoxy resin) of oxygen resin and solid epoxy resin is more preferably 1 by quality ratio:
The range of 0.3~1:3.5, the further preferably range of 1:0.6~1:3.
Nonvolatile component in resin combination is being set as 100 mass % by the content of the epoxy resin in resin combination
When, the preferably 3 mass % of mass %~40, the more preferably 5 mass % of mass %~35, and then preferably 10 mass of mass %~30 %.
The epoxide equivalent of epoxy resin is preferably 50~5000, and more preferably 50~3000, and then preferably 80~2000,
And then more preferably 110~1000.By becoming sufficiently, rough surface can be formed for the crosslink density of the range, solidfied material
Spend small insulating layer.It should be noted that epoxide equivalent can be measured according to JIS K7236, it is the tree containing 1 equivalent epoxy group
The quality of rouge.The weight average molecular weight of epoxy resin is preferably 100~5000, and more preferably 250~3000, further preferably
400~1500.Wherein, the weight average molecular weight of epoxy resin is changed using the polystyrene of gel permeation chromatography (GPC) method measurement
The weight average molecular weight of calculation.
Curing agent-
As curing agent, as long as having the function of epoxy resin cure, there is no particular limitation, such as benzene can be enumerated
Phenol (phenol) is that curing agent, naphthols system curing agent, active ester system curing agent, benzoxazine system curing agent and cyanate system are solid
Agent.Curing agent can be used alone, two or more can also be applied in combination.
Preferably have from the point of view of heat resistance and water resistance as phenol system curing agent and naphthols system curing agent
The phenol system curing agent of novolac structure (novolac structure) or with novolac structure naphthols system solidification
Agent.In addition, from the point of view of the dhering strength with conductor layer, preferably nitrogenous phenol system curing agent or nitrogenous naphthols system
The naphthols system curing agent of curing agent, more preferably the phenol system curing agent of the skeleton containing triazine or the skeleton containing triazine.Wherein, from height
Meet heat resistance, water resistance and with from the point of view of the dhering strength of conductor layer, the preferably line style phenolic aldehyde tree of the skeleton containing triazine
Rouge.They can be used alone, two or more can also be applied in combination.
As the specific example of phenol system curing agent and naphthols system curing agent, can enumerate for example bright and chemical conversion (strain) system
Gold is lived by " MEH-7700 ", " MEH-7810 ", " MEH-7851 ", " NHN " of Japanese chemical drug (strain) system, " CBN ", " GPH ", Nippon Steel
" SN-170 " of chemical (strain) system, " SN-180 ", " SN-190 ", " SN-475 ", " SN-485 ", " SN-495 ", " SN-375 ",
" LA-7052 ", " LA-7054 ", " LA-3018 ", " LA-1356 ", " TD2090 " etc. of " SN-395 ", DIC (strain) system.
Active ester system curing agent is not particularly limited, it is usually preferred to use phenolic ester class (phenol esters), benzenethiol
Ester (thiophenol esters) class, N- hydroxylamine esters, esters of heterocycle hydroxyl compound etc. in 1 molecule have 2 with
The compound of the high ester group of upper reactivity.The active ester system curing agent preferably passes through carboxylic acid compound and/or thiocarboxylic
It closes the condensation reaction of object and hydroxy compounds and/or mercaptan compound and obtains.It is excellent especially from the point of view of improving heat resistance
The active ester system curing agent that choosing is obtained by carboxylic acid compound and hydroxy compounds.More preferably by carboxylic acid compound and oxybenzene compound
And/or the active ester system curing agent that naphthol compound obtains.As carboxylic acid compound, it can be mentioned, for example: benzoic acid, acetic acid, amber
Amber acid, maleic acid, itaconic acid, phthalic acid, M-phthalic acid, terephthalic acid (TPA), Pyromellitic Acid etc..As phenol chemical combination
Object or naphthol compound, it can be mentioned, for example: quinhydrones, resorcinol, bisphenol-A, Bisphenol F, bisphenol S, phenolphthalin, methylation bisphenol-A,
Methylate Bisphenol F, methylation bisphenol S, phenol, o-cresol, metacresol, paracresol, catechol, alpha-Naphthol, betanaphthol, 1,5- bis-
Hydroxyl naphthalene, 1,6- dihydroxy naphthlene, 2,6- dihydroxy naphthlene, dihydroxy benaophenonel, trihydroxybenzophenone, tetrahydroxy hexichol first
Ketone, phloroglucin, benzenetriol (benzenetriol), dicyclopentadiene-type bisphenol compounds, linear phenol-aldehyde resin (phenol
Novolac) etc..Wherein, " dicyclopentadiene-type bisphenol compounds " refer to that 2 molecule phenol and 1 molecule bicyclopentadiene are condensed
Obtained by bisphenol compounds.
As active ester system curing agent, active ester compound preferably containing dicyclopentadiene-type biphenol structure contains
There are the active ester compound of naphthalene structure, the active ester compound of acetylate containing linear phenol-aldehyde resin, containing novolak
The active ester compound of the benzoylate of resin, wherein the active ester compound of further preferably naphthalene structure, contain two rings penta
The active ester compound of diene type biphenol structure.They can be used alone, two or more can also be applied in combination.It answers
Explanation is given, " dicyclopentadiene-type biphenol structure " indicates to include-two ring pentalene of phenylene (ジ シ Network ロ ペ Application タ レ Application)-
The divalent structural unit of phenylene.
As the commercially available product of active ester system curing agent, the active ester compound containing dicyclopentadiene-type biphenol structure can
To enumerate " EXB9451 ", " EXB9460 ", " EXB9460S ", " HPC-8000-65T " (DIC (strain) system), the work containing naphthalene structure
Property ester compounds can enumerate " EXB9416-70BK " (DIC (strain) system), the activity of the acetylate containing linear phenol-aldehyde resin
Ester compounds can enumerate " DC808 " (Mitsubishi Chemical's (strain) system), the active ester of the benzoylate containing linear phenol-aldehyde resin
Compound can enumerate " YLH1026 " (Mitsubishi Chemical's (strain) system) etc..
As the specific example of benzoxazine system curing agent, can enumerate Showa macromolecule (strain) system " HFB2006M ",
" P-d ", " F-a " of four countries' chemical conversion industry (strain) system.
It as cyanate system curing agent, is not particularly limited, such as phenol aldehyde type (ノ ボ ラ ッ Network type) (line can be enumerated
Type phenol aldehyde type, alkyl novolac type etc.) cyanate system curing agent, dicyclopentadiene-type cyanate system curing agent, bisphenol type be (double
Phenol A type, bisphenol-f type, bisphenol S type etc.) cyanate system curing agent and their prepolymer that with a portion of triazine
Deng.As concrete example, bisphenol A dicyanate, polyphenol cyanate (oligomeric (3- methylene -1,5- phenylene cyanic acid can be enumerated
Ester)), 4,4' methylene bis (2,6- 3,5-dimethylphenyl cyanate), 4,4'- ethylidenediphenyl dicyanate, hexafluoro bisphenol-a
Bis- (4- cyanate) phenyl-propanes of dicyanate, 2,2-, 1,1- bis- (4- cyanate phenylmethanes), bis- (4- cyanate -3,5- two
Aminomethyl phenyl) methane, bis- (4- cyanate phenyl -1- (methyl the ethylidene)) benzene of 1,3-, bis- (4- cyanate phenyl) thioethers and double
The 2 function cyanate ester resins, the multifunctional cyanate ester tree as derived from line style phenolic aldehyde and Cresol formaldehyde etc. such as (4- cyanate phenyl) ether
Rouge, these cyanate ester resins a part by prepolymer of triazine etc..As the commercially available product of cyanate system curing agent, Ke Yilie
" PT30 " and " PT60 " (being novolac type multifunctional cyanate ester resin) of act ロ Application ザ ジ ャ パ Application (strain) system,
" BA230 " (prepolymer that part or all of bisphenol A dicyanate is become tripolymer by triazine) etc..
The amount ratio of epoxy resin and curing agent, from the angle for improving the mechanical strength of resulting insulating layer, water resistance
Consider, with [total number of the epoxy group of epoxy resin]: the ratiometer of [total number of the reactive group of curing agent] is preferably 1:0.2
The range of~1:2, the more preferably range of 1:0.3~1:1.5, and then the range of preferably 1:0.4~1:1.Wherein, curing agent
Reactive group be activity hydroxy, active ester groups etc., it is different according to the type of curing agent.In addition, the epoxy group of epoxy resin
Total number refers to for all epoxy resin, by the solid state component quality of each epoxy resin divided by be worth obtained by epoxide equivalent into
The total value of row, the total number of the reactive group of curing agent refers to for all curing agent, by the solid state component matter of each curing agent
Amount carries out total value divided by value obtained by reactive group equivalent.
In one embodiment, resin combination of the invention contain above-mentioned inorganic filling material, epoxy resin and
Curing agent.Wherein, resin combination preferably contains respectively as the crystalline silica of inorganic filling material, as epoxy resin
Liquid-state epoxy resin and the mixture of solid epoxy resin (liquid-state epoxy resin: the mass ratio of solid epoxy resin is preferably
1:0.1~1:4, more preferably 1:0.3~1:3.5, and then preferably 1:0.6~1:3), as curing agent be selected from phenol system
One or more of curing agent, naphthols system curing agent, active ester system curing agent and cyanate system curing agent.Contain even for combination
There is a resin composition layer of the specific ingredient, the suitable content of inorganic filling material, epoxy resin and curing agent is also such as
It is above-mentioned such.
Resin combination of the invention as needed can be in turn containing selected from thermoplastic resin, curing accelerator, fire-retardant
The additive of one or more of agent and organic filler material.
Thermoplastic resin-
As thermoplastic resin, such as phenoxy resin can be enumerated, polyvinyl acetal resin, polyolefin resin, gathered
Butadiene resin, polyimide resin, polyamide-imide resin, polyetherimide resin, polysulfone resin, polyethersulfone resin,
Polyphenylene oxide resin, polycarbonate resin, polyether-ether-ketone resin, polyester resin.Thermoplastic resin can be used alone, or by 2
Kind combination of the above uses.
The weight average molecular weight of the polystyrene conversion of thermoplastic resin is preferably 8000~70000 range, more preferably
10000~60000 range, and then preferably 20000~60000 range.The weight of the polystyrene conversion of thermoplastic resin
Average molecular weight is measured with gel permeation chromatography (GPC) method.Specifically, the weight average molecular weight of the polystyrene conversion of thermoplastic resin
Can be used (strain) Shimadzu Seisakusho Ltd. LC-9A/RID-6A as measurement device, using Showa electrician (strain) Shodex K- processed
800P/K-804L/K-804L as pillar, use chloroform etc. as mobile phase, be measured at 40 DEG C of column temperature, it is poly- using standard
The standard curve of styrene calculates.
Phenoxy resin can be enumerated for example with selected from bisphenol A skeleton, Bisphenol F skeleton, bisphenol S skeleton, bis-phenol acetyl
Benzene skeleton, phenolic aldehyde skeleton, biphenyl backbone, fluorene skeleton, bicyclopentadiene skeleton, enb skeleton, naphthalene skeleton, anthracene skeleton, gold
The phenoxy resin of the skeleton of one or more of rigid alkane skeleton, terpenes skeleton and trimethyl-cyclohexane skeleton.Phenoxy resin
End can be any functional group such as phenolic hydroxyl group, epoxy group.Phenoxy resin can be used alone, can also by 2 kinds with
On be applied in combination.As the concrete example of phenoxy resin, " 1256 " and " 4250 " that can enumerate Mitsubishi Chemical (strain) system (are
Phenoxy resin containing bisphenol A skeleton), " YX8100 " (phenoxy resin containing bisphenol S skeleton) and " YX6954 " (contain
Have the phenoxy resin of bis-phenol acetyl benzene skeleton), it is other can also enumerate Nippon Steel live aurification (strain) system " FX280 " and
" YL7553 ", " YL6794 ", " YL7213 ", " YL7290 " and " YL7482 " etc. of " FX293 ", Mitsubishi Chemical's (strain) system.
As the concrete example of polyvinyl acetal resin, the electrochemical Block チ ラ ー of electrochemically industrial (strain) system can be enumerated
Le 4000-2,5000-A, 6000-C, 6000-EP, the エ ス レ ッ Network BH of ponding chemical industry (strain) system is serial, BX is serial, KS
Series, BL series, BM series etc..
As the specific example of polyimide resin, can enumerate new Japan Chemical (strain) system " リ カ コ ー ト SN20 " and
"リカコートPN20".As the specific example of polyimide resin, can also enumerate makes 2 functional hydroxyl groups end polybutadienes
(the Japanese Unexamined Patent Publication 2006-37083 bulletin of threadiness polyimides obtained by alkene, diisocyanate cpd and quaternary anhydride reaction
The substance of record), polyimides (Japanese Unexamined Patent Publication 2002-12667 bulletin and Japanese Unexamined Patent Publication containing silicone matrix
The substance recorded in 2000-319386 bulletin etc.) etc. modified polyimides.
As the specific example of polyamide-imide resin, " the バ イ ロ マ ッ Network ス of Japan's weaving (strain) system can be enumerated
HR11NN " and " バ イ ロ マ ッ Network ス HR16NN ".As the specific example of polyamide-imide resin, Hitachi can also be enumerated
The polyamidoimide " KS9100 " containing silicone matrix, modified polyamides acyl such as " KS9300 " of chemical conversion industry (strain) system
Imines.
As the specific example of polyethersulfone resin, " PES5003P " etc. of Sumitomo Chemical (strain) system can be enumerated.
As the specific example of polysulfone resin, the poly- of ソ Le ベ イ ア De バ Application ス ト Port リ マ ー ズ (strain) system can be enumerated
Sulfone " P1700 ", " P3500 " etc..
Nonvolatile component in resin combination is being set as 100 matter by the content of the thermoplastic resin in resin combination
When measuring %, the preferably 0.1 mass % of mass %~20, the more preferably 0.5 mass % of mass %~10, and then preferably 1 matter of mass %~5
Measure %.
Curing accelerator-
Curing accelerator can enumerate for example phosphorus system curing accelerator, amine system curing accelerator, imidazoles system curing accelerator,
Guanidine system curing accelerator etc., preferably phosphorus system curing accelerator, amine system curing accelerator, imidazoles system curing accelerator.Solidification promotees
It can be used alone, two or more can also be applied in combination into agent.The content of curing accelerator, by epoxy resin and admittedly
When the nonvolatile component of agent total is set as 100 mass %, preferably used with the range of 0.05 mass of mass %~3 %.
Fire retardant-
As fire retardant, can enumerate phosphorus compound, nitrogen compound that for example organic phosphorus flame retardant, organic system are nitrogenous,
Silicone flame retardant, metal hydroxides etc..Fire retardant can be used alone, or two or more is applied in combination.Resin
The content of fire retardant in composition is not particularly limited, but the nonvolatile component in resin combination is set as 100 mass %
When, the preferably 0.5 mass % of mass %~10, more preferably 1 mass of mass %~9 %.
Organic filler material-
It is workable when maying be used at the insulating layer to form printed wiring board arbitrary organic to fill out as organic filler material
Material is filled, can be enumerated such as rubber particles, polyamide particles, organic silicon particle, preferably rubber particles.
As rubber particles, as long as to the resin of display caoutchouc elasticity implement chemically crosslinking Treatment, for organic molten
The microsome of insoluble and insoluble resin in agent, there is no particular limitation, such as acrylonitrile-butadiene rubber grain can be enumerated
Son, butadiene rubber particle, acrylic rubber particle etc..As rubber particles, specifically, XER-91 (Japan can be enumerated
Synthesize go system (strain) system), ス タ Off ィ ロ イ De AC3355, AC3816, AC3816N, AC3832, AC4030, AC3364, IM101
(above, ア イ カ industrial (strain) system) パ ラ ロ イ De EXL2655, EXL2602 (more than, Wu Yu chemical industry (strain) system) etc..
The average grain diameter of organic filler material is preferably 0.005 μm~1 μm of range, more preferably 0.2 μm~0.6 μm
Range.Dynamic light scattering determination can be used in the average grain diameter of rubber particles.Such as it can use ultrasonic wave etc. and make rubber granule
Son is evenly dispersed in organic solvent appropriate, and using dense system's particle size analyzer, (big tomb electronics (strain) makes " FPAR-
1000 ") it, is made the size distribution of rubber particles with quality criteria, its median particle diameter is measured as average grain diameter.Resin group
The content for closing the rubber particles in object is preferably the 1 mass % of mass %~10, more preferably 2 mass of mass %~5 %.
Other ingredients-
Resin combination of the invention can contain other ingredients as needed.As other ingredients, Ke Yilie
Citing such as organocopper compound, organic zinc compound and organic cobalt compounds organo-metallic compound and thickener, defoaming
Resin additives such as agent, levelling agent, adaptation imparting agent, colorant and curable resin etc..
The preparation method of resin combination of the invention is not particularly limited, and can enumerate for example by gradation composition according to need
Solvent etc. is added, is mixed using impeller etc., the method dispersed etc..
Resin combination of the invention shows good dispersion stabilization and suitable melt viscosity, while can be with suppressing portion
Warpage in the installation procedure of part.The interlayer that resin combination of the invention can be suitable as being used to form printed wiring board is exhausted
The resin combination (interlayer insulating film of printed wiring board resin combination) of edge layer uses, and then is suitable as shape
(track of conductor layer is formed using plating at the resin combination for the interlayer insulating film for utilizing plating to form conductor layer on it
The interlayer insulating film of road plate resin combination) it uses.Resin combination of the invention can be also used for adhesive film, prepreg
Etc. sheets laminated material, solder resist, underfill, bonding (die bonding) material, semiconductor-encapsulating material, filling perforation
Resin, component potting resin etc., the extensive use for needing resin combination.
[sheet laminated material]
Resin combination of the invention can also be coated with varnish state, be used, but be industrially generally adapted with
The form of the sheet laminated material of the resin composition layer of the formation containing the useful resin combination uses.
As sheet laminated material, adhesive film preferably as shown below, prepreg.
In one embodiment, the resin composition layer that adhesive film contains supporter and engages with the supporter is (Nian Jie
Layer), resin composition layer (adhesive layer) is formed by resin combination of the invention.
The thickness of resin composition layer, from the point of view of the slimming of printed wiring board, preferably 100 μm hereinafter, more
Preferably 80 μm hereinafter, be preferably 60 μm hereinafter, being more preferably 50 μm or less or 40 μm or less in turn in turn.Resin composition layer
The lower limit of thickness be not particularly limited, usually 10 μm or more.
As supporter, the film being for example molded of plastic material, metal foil, processing release paper can be enumerated, preferably by plastics
The film of material formation, metal foil.
When using the film that is molded of plastic material as supporter, plastic material can enumerate such as poly terephthalic acid second
The polyester, poly- carbonic acid such as diester (hereinafter sometimes referred to simply as " PET "), polyethylene naphthalate (hereinafter sometimes referred to simply as " PEN ")
The acrylic acid series such as ester (hereinafter sometimes referred to simply as " PC "), polymethyl methacrylate (PMMA), cyclic polyolefin, triacetyl are fine
Tie up plain (TAC), polyether sulfides (PES), polyether-ketone, polyimides etc..Wherein, preferably polyethylene terephthalate, poly- naphthalene
Dioctyl phthalate second diester, particularly preferably cheap polyethylene terephthalate.
When using metal foil as supporter, metal foil can be enumerated such as copper foil, aluminium foil, preferably copper foil.As
Copper foil, can be used the foil being made of the monometallic of copper, also can be used by copper and other metals (such as tin, chromium, silver, magnesium,
Nickel, zirconium, silicon, titanium etc.) alloy constitute foil.
It can implement delustring processing, sided corona treatment to the surface for the side of supporter engaged with resin composition layer.In addition,
As supporter, the surface for maying be used at the side engaged with resin composition layer has the support with release layer of release layer
Body.As release agent used in the release layer in the supporter with release layer, can enumerate for example selected from alkyd resin, alkene
The release agent of one or more of hydrocarbon resin, polyurethane resin and organic siliconresin.As the commercially available product of release agent, can enumerate
Such as alkyd resin system release agent, リ Application テ ッ Network (strain) system " SK-1 ", " AL-5 ", " AL-7 " etc..
The thickness of supporter is not particularly limited, preferably 5 μm~75 μm of range, more preferably 10 μm~60 μm of model
It encloses.It should be noted that when supporter is supporter with release layer, preferably the supporter with release layer it is whole with a thickness of upper
State range.
Adhesive film can for example manufacture as follows, that is, preparation is dissolved with the resin of resin combination in organic solvent
The resin varnish is coated on supporter using chill coating machine etc., and then makes it dry and form resin combination by varnish
Thus nitride layer manufactures.
Organic solvent can enumerate ketone, ethyl acetate, acetic acid such as acetone, methyl ethyl ketone (MEK) and cyclohexanone
The acetate esters such as butyl ester, cellosolve acetate, propylene glycol monomethyl ether and carbitol acetate, cellosolve and butyl card
It must aromatic hydrocarbon, dimethylformamide, dimethyl acetamide (DMAc) and the N- first such as carbitols class, toluene and the dimethylbenzene such as alcohol
Acid amides series solvents such as base pyrrolidones etc..Organic solvent can be used alone, or two or more is applied in combination.
Drying can use method well known to heating, blowing hot-air etc. to implement.Drying condition is not particularly limited, but into
Row drying, so that the content of the organic solvent in resin composition layer is 10 mass % or less, preferably 5 mass % or less.According to tree
The boiling point of organic solvent in rouge varnish and it is different, such as use the tree of the organic solvent containing 30 mass of mass %~60 %
When rouge varnish, by 50 DEG C~150 DEG C drying 3 minutes~10 minutes, resin composition layer can be formed.
In adhesive film, in the face (that is, face with supporter opposite side) of resin composition layer not engaged with supporter
On, the protective film being consistent with supporter can be laminated in turn.The thickness of protective film is not particularly limited, and for example, 1 μm~40 μm.
By the way that protective film is laminated, dust etc. can be prevented to the attachment on the surface of resin composition layer or prevent scar.Adhesive film can be with
It is rolled into a roll to save, when adhesive film has protective film, can be used by removing protective film.
In one embodiment, prepreg is and being impregnated into resin combination of the invention in sheet-like fiber substrate
It is formed.
Sheet-like fiber substrate used in prepreg is not particularly limited, and can be used as glass cloth, aromatic polyamides
The common sheet-like fiber substrate of the prepregs substrates such as non-woven fabrics, liquid crystal polymer non-woven fabrics.From the slimming of printed wiring board
From the point of view of, the thickness of sheet-like fiber substrate be preferably 50 μm hereinafter, more preferably 40 μm hereinafter, in turn be preferably 30 μm with
Under, and then more preferably 20 μm or less.The lower limit of the thickness of sheet-like fiber substrate is not particularly limited, and usually 10 μm or more.
Prepreg can use the manufacture of method well known to hot melt, solvent method etc..
The thickness of prepreg can be same range with the resin composition layer in above-mentioned adhesive film.
In sheet laminated material, the lowest melt viscosity of resin composition layer, from inhibition tree when manufacturing printed wiring board
From the point of view of the exudation of rouge, it is more than preferably 300 pools, it is more than more preferably 500 pools, so preferably 700 pools are above, 900
More than pool or more than 1000 pools.The upper limit of the lowest melt viscosity of resin composition layer, it is good from being realized when manufacturing printed wiring board
From the point of view of good lamination (circuit landfill), preferably 30000 pools are hereinafter, more preferably 25000 moor hereinafter, excellent in turn
It is selected as that 20000 pools or less, 15000 pools are following, 10000 pools are following, 5000 pools are following or 3500 pools are following.Especially in printed wire
When implementing the lamination of resin composition layer and internal substrate using vacuum layer platen press in the manufacture of plate, resin composition layer it is minimum
The upper limit of melt viscosity is suitably for 5000 pools or less or 3500 pools are following.Wherein, " lowest melt viscosity " of resin composition layer
Refer to the minimum viscosity that resin composition layer is presented in the resin melting of resin composition layer.In detail, with certain liter
When resin composition layer is heated and makes resin melting by warm speed, melt viscosity while temperature rises of stage in the early stage drops
Low, when being then more than certain temperature, melt viscosity is increased while temperature rises." lowest melt viscosity " refers to described minimum
The melt viscosity of point.The lowest melt viscosity of resin composition layer can use the measurement of dynamic viscoelastic method, such as can be according to
The method recorded in the measurement > of following < lowest melt viscosities measures.
It, can in the present invention for the inorganic filling material for meeting specific geometric shape parameters condition for having used specified amount
To advantageously generate the resin composition layer for the lowest melt viscosity for showing above-mentioned suitable range, it can bring and be printed in manufacture
The sheet laminated material of good lamination is shown when wiring board.In addition, resin combination of the invention is good due to showing
Dispersion stabilization can inhibit coarse agglutination particle in resin composition layer hence for resulting sheet laminated material
It is precipitated.
Sheet laminated material of the invention can be suitable for the insulating layer (printed wiring board in order to form printed wiring board
Insulating layer use), can be particularly suited for form the interlayer insulating film of the printed wiring board (layer insulation of printed wiring board
Layer is used), and then can be suitable for the resin combination in order to form interlayer insulating film, the interlayer insulating film is by plating at it
It is upper to form conductor layer (the interlayer insulating film use of the printed wiring board of conductor layer is formed by plating).
[printed wiring board]
Printed wiring board of the invention contains the insulating layer formed using the solidfied material of resin combination of the invention.
In one embodiment, above-mentioned adhesive film can be used, using containing following in printed wiring board of the invention
(I) it is manufactured with the method for the process of (II),
(I) it will be bonded film lamination on internal substrate, engage the resin composition layer of the adhesive film with internal substrate
Process;
(II) process that resin composition layer heat cure is formed into insulating layer.
" internal substrate " used in process (I) is primarily referred to as glass epoxy substrate, metal substrate, polyester substrate, polyamides
The substrates such as imines substrate, BT resin substrate, heat curing type polyphenylene oxide substrate are schemed in the one or both sides formation of the substrate
The circuit substrate of the conductor layer (circuit) of case processing.In addition, when manufacturing printed wiring board, so should be formed insulating layer and/
Or the internal layer circuit substrate of the intermediate manufacture object of conductor layer is also included in the present invention in described " internal substrate ".
The thickness of internal substrate, from the point of view of the slimming of printed wiring board, preferably 800 μm hereinafter, more preferably
For 400 μm hereinafter, being in turn preferably 200 μm or less.According to the present invention, even if in the case where using thin internal substrate in turn,
It can also inhibit the warpage of printed wiring board in installation procedure.Such as even if use with a thickness of 190 μm or less, 180 μm or less,
170 μm or less, 160 μm or less, 150 μm or less, 140 μm or less, 130 μm or less, 120 μm or less, 110 μm or less or 100 μm
In the case where internal substrate below, the warpage in installation procedure can also be inhibited.The lower limit of the thickness of internal substrate is without spy
From the point of view of operability when not limiting, but manufacturing from printed wiring board improves, preferably 10 μm or more, more preferably 20 μm
More than.
The bending elastic modulus of internal substrate is not particularly limited.In the present invention, no matter the elasticity of flexure of internal substrate
Modulus, can warpage in the installation procedure of suppression component.
The lamination of internal substrate and adhesive film for example can be by heating on internal substrate from support side by adhesive film
It presses to carry out.As the component (hereinafter also referred to " heating pressing component ") that adhesive film is heated to pressing on internal substrate,
It can enumerate such as warmed-up metal plate (SUS siding) or metallic roll (SUS roller) etc..It should be noted that it is preferred that not being that will add
Hot pressing component directly pressurizes on adhesive film, but clips heat resistant rubber elastomeric material and pressurize, so that adhesive film fills
Comply with the concave-convex surface of internal substrate with dividing.
The lamination of internal substrate and adhesive film can use the implementation of vacuum layer platen press.In vacuum layer platen press, heating pressing
Temperature is preferably 60 DEG C~160 DEG C, more preferably 80 DEG C~140 DEG C of range, heating pressing pressure be preferably 0.098MPa~
1.77MPa, the more preferably range of 0.29MPa~1.47MPa, heating pressing time is preferably 20 seconds~400 seconds, more preferably
30 seconds~300 seconds ranges.Lamination is preferably implemented in the case where pressure is 26.7hPa reduced pressure below.
Lamination can use commercially available vacuum laminator and carry out.As commercially available vacuum laminator, can enumerate for example
(strain) name mechanism makees made vacuum pressure type laminating machine, vacuum pack system device of ニ チ ゴ ー モ ー ト Application (strain) system etc..
After lamination, by pressurizeing (under atmospheric pressure), for example by heating pressing component from support side under normal pressure, it can carry out
The smoothing techniques of the adhesive film of lamination.The pressurized conditions of smoothing techniques, which can be set to, presses condition with the heating of above-mentioned lamination
For same condition.Smoothing techniques can be carried out by commercially available laminating machine.It should be noted that lamination and smoothing techniques can be with
It is continuously carried out using above-mentioned commercially available vacuum laminator.
The lamination of internal substrate and adhesive film can also be implemented using vacuum hotpressing machine.By using vacuum hotpressing machine, i.e.,
Make using the high resin combination of inorganic filling material content, good lamination also may be implemented, and (circuit is filled out
Burying property).Being heated and pressurizeed can be carried out with 1 stage, but from the point of view of the exudation for inhibiting resin, is preferably divided into condition
2 more than the stage carry out.Such as preferably by the pressurization in the 1st stage temperature be 70~150 DEG C, pressure be 0.098MPa~
The range of 1.77MPa carries out, by the pressurization in the 2nd stage temperature is 150~200 DEG C, pressure is 0.098MPa~3.92MPa's
Range carries out.The time in each stage is preferably 30~120 minutes.Pressurization is usually 1 × 10-2MPa or less, preferably 1 × 10-3MPa
Implement under decompression below.As commercially available vacuum hotpressing machine, such as (strain) name mechanism can be enumerated and make made " MNPC-V-
750-5-200 ", Beichuan essence machine (strain) system " VH1-1603 " etc..When implementing process (I) using vacuum hotpressing machine, which can be simultaneous
There is the heat cure (that is, process (II)) of resin composition layer.
Supporter can remove between process (I) and process (II), can also remove after process (II).
In process (II), resin composition layer is subjected to heat cure and forms insulating layer.
The heat cure condition of resin composition layer is not particularly limited, and can be used in the insulating layer for forming printed wiring board
When the condition that generallys use.
For example, the heat cure condition of resin composition layer is different according to type of resin combination etc., but solidification temperature
It can be 120~240 DEG C of range (preferably 150~210 DEG C of range, more preferably 170~190 DEG C of range), when solidification
Between can be 5~90 minutes ranges (preferably 10~75 minutes, more preferably 15~60 minutes).
It, can be pre- in the at a temperature of progress lower than solidification temperature by resin composition layer before making resin composition layer heat cure
Heating.It, can be at 50 DEG C more than and less than 120 DEG C (preferably 60 DEG C or more and 110 such as before making resin composition layer heat cure
DEG C or less, more preferable 70 DEG C or more and 100 DEG C or less) at a temperature of, resin composition layer is carried out 5 minutes or more (preferably 5~
150 minutes, it is 15~120 minutes more preferable) preheating.
Low thermal expansion coefficient is shown by the insulating layer that the solidfied material of resin combination of the invention is formed.Implement at one
In mode, the insulating layer formed by the solidfied material of resin combination of the invention have preferred 30ppm/ DEG C or less, it is more preferable
28ppm/ DEG C of coefficient of linear thermal expansion below.The lower limit of the coefficient of linear thermal expansion of insulating layer is not particularly limited, usually 1ppm/
DEG C or more.The coefficient of linear thermal expansion of insulating layer for example can use the measurement of method well known to thermo-mechanical analysis etc..As thermomechanical
Analytical equipment can enumerate " the Thermo Plus TMA8310 " of such as (strain) リ ガ Network.In the present invention, the line of insulating layer
When thermal expansion coefficient carries out thermo-mechanical analysis with tensile load method, 25~150 DEG C of coefficient of linear thermal expansion of in-plane.
When manufacturing printed wiring board, can implement in turn (III) the process of insulating layer perforating, (IV) by insulating layer into
The process that the process of row roughening treatment, (V) form conductor layer in surface of insulating layer.These processes (III) to (V) can basis
Used in the manufacture of printed wiring board, well known to a person skilled in the art various methods to implement.It should be noted that will support
For body when process (II) removes afterwards, the removing of the supporter can be between process (II) and process (III), process (III) and work
Implement between sequence (IV) or between process (IV) and process (V).
Process (III) is the process of aperture on the insulating layer, it is possible thereby to be formed on the insulating layer through-hole (via hole),
The holes such as open-work (through hole).The composition etc. of process (III) resin combination according to used in the formation of insulating layer, example
Drill bit, laser, plasma such as can be used to implement.Size, the shape in hole can be fitted according to the design of printed wiring board
Work as decision.As previously mentioned, resin combination of the invention is due to showing good dispersion stabilization, to can inhibit resin combination
The precipitation of coarse agglutination particle in nitride layer and then in insulating layer.It, can be in work in the insulating layer with uniform composition
The hole with required cross sectional shape is formed in sequence (III).Therefore, even if hole is filled with conductor metal and forms filling conducting
In the case where hole (Off ィ Le De ビ ア), it will successfully can also be filled in hole with conductor metal.At this point, as using broken
The case where inorganic filling material of broken shape, is such, and the sharp inorganic filling material for having corner angle or its coarse agglutination particle are present in
When the wall surface in hole, using the inorganic filling material or its coarse agglutination particle as starting point, plating preferentially extends, therefore exists sometimes
Gap is generated in filling via hole.In the present invention using the inorganic filling material for meeting specific geometric shape parameters condition
In, it can inhibit the wall surface that described agglutination particle etc. is present in hole, therefore the entire wall surface in hole, plating equably extend, it can be with
Advantageously inhibit the generation in the gap in filling via hole.
Process (IV) is the process for being roughened insulating layer.The step of roughening treatment, condition be not special
It limits, it can be using the known step usually used when forming the insulating layer of printed wiring board, condition.Such as it can be successively
Implement swelling process, the roughening treatment using oxidant, the neutralisation treatment using neutralizer using swelling liquid, by insulating layer
It is roughened.It as swelling liquid, is not particularly limited, aqueous slkali, surfactant solution etc. can be enumerated, preferably
Aqueous slkali, as the aqueous slkali, more preferably sodium hydroxide solution, potassium hydroxide solution.As commercially available swelling liquid, Ke Yilie
ス ウ ェ リ Application グ デ ィ ッ プ セ キ ュ リ ガ Application ス P, the ス ウ ェ リ Application グ of citing such as ア ト テ ッ Network ジ ャ パ Application (strain) system
デ ィ ッ プ セ キ ュ リ ガ Application ス SBU etc..Be not particularly limited using the swelling process of swelling liquid, for example, can by 30~
Insulating layer is impregnated 1 minute~20 minutes to carry out in 90 DEG C of swelling liquid.It as oxidant, is not particularly limited, Ke Yilie
The alkaline permanganic acid solution of potassium permanganate, sodium permanganate has such as been dissolved in citing in the aqueous solution of sodium hydroxide.Using alkaline high
The roughening treatment of the oxidants such as mangaic acid solution varnished insulation layer 10 preferably in the oxidizing agent solution for being heated to 60 DEG C~80 DEG C
Minute~30 minutes.In addition, the concentration of the permanganate in alkaline permanganic acid solution is preferably 5 mass of mass %~10 %.As
Commercially available oxidant, can enumerate such as ア ト テ ッ Network ジ ャ パ Application (strain) system U Application セ Application ト レ ー ト U Application パ Network ト CP,
The alkalinity permanganic acid solution such as ド ー ジ Application グ ソ リ ュ ー シ ョ Application セ キ ュ リ ガ Application ス P.In addition, as neutralizer, preferably
Acid aqueous solution can enumerate the リ ダ Network シ ョ Application ソ リ ュ ー of such as ア ト テ ッ Network ジ ャ パ Application (strain) system as commercially available product
ション・セキュリガントP.It can be by making to have carried out at the roughening using oxidizing agent solution using the processing of neutralizer
The process face of reason impregnates 5 minutes~30 minutes in 30~80 DEG C of neutralizer to carry out.
Low surface roughness is shown after roughening treatment using the insulating layer that resin combination of the invention is formed.?
In one embodiment, the arithmetic average roughness Ra of the surface of insulating layer after roughening treatment is preferably 500nm hereinafter, more excellent
480nm is selected as hereinafter, being in turn preferably 450nm hereinafter, being more preferably 400nm or less, 360nm or less or 320nm or less in turn.
Even if the insulating layer formed using resin combination of the invention is in the case where Ra is small in this way, also in referring now to conductor layer
Excellent dhering strength.The lower limit of Ra value is not particularly limited, preferably 0.5nm or more, more preferably 1nm or more.Insulating layer
The arithmetic average roughness Ra on surface can be used non-contact type surface roughness meter and be measured.It is thick as non-contact type surface
The specific example of roughnessmeter can enumerate " the WYKO NT3300 " of ビ ー U イ Application ス ツルメン Star society.
Process (V) is the process that conductor layer is formed on surface of insulating layer.
Conductor material used in conductor layer is not particularly limited.In suitable embodiment, conductor layer, which contains, to be selected from
The metal of one or more of gold, platinum, palladium, silver, copper, aluminium, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin and indium.Conductor layer can be list
Metal layer or alloy-layer, as alloy-layer, can enumerate for example by selected from metal of more than two kinds among the above alloy (such as
Nickel-chromium alloy, copper-nickel alloy and copper-titanium alloy) formed layer.Wherein, versatility, the cost, pattern shape formed from conductor layer
At easiness angularly consider, preferably the single metal layer of chromium, nickel, titanium, aluminium, zinc, gold, palladium, silver or copper or nickel-chromium alloy,
Copper-nickel alloy, copper-titanium alloy alloy-layer, more preferably the single metal layer of chromium, nickel, titanium, aluminium, zinc, gold, palladium, silver or copper or
The alloy-layer of nickel-chromium alloy, and then the single metal layer of preferably copper.
Conductor layer can be single layer structure, be also possible to 2 layers or more of the list formed by different types of metal or alloy
The multilayered structure of metal layer or alloy layer laminate.Conductor layer be multilayered structure when, the layer to connect with insulating layer be preferably chromium, zinc or
The single metal layer of titanium or the alloy-layer of nickel-chromium alloy.
The thickness of conductor layer depends on the design of desired printed wiring board, but generally 3 μm~35 μm, preferably 5 μm
~30 μm.
Conductor layer can use plating to be formed.Such as the known skill such as can use semi-additive process, full additive method
Art carries out plating on the surface of insulating layer, forms the conductor layer with required Wiring pattern.Semi-additive process is utilized hereinafter, showing
Form the example of conductor layer.
Firstly, conformal at plating layer (メ ッ キ シ ー De layer) using electroless plating on the surface of insulating layer.Then, in shape
At plating layer on, corresponding to required Wiring pattern, form the mask pattern for exposing a part of plating layer.In exposing
On plating layer, after forming metal layer using plating, mask pattern is removed.Then, unwanted plating layer is removed using etching etc.,
The conductor layer with required Wiring pattern can be formed.
Sufficient dhering strength is shown for conductor layer using the insulating layer that resin combination of the invention is formed.At one
In embodiment, the dhering strength of insulating layer and conductor layer is preferably 0.50kgf/cm or more, more preferably 0.55kgf/cm with
On, and then preferably 0.60kgf/cm or more.The upper limit value of dhering strength is not particularly limited, be 1.2kgf/cm or less,
0.90kgf/cm is such as the following.In the present invention, it although the surface roughness Ra of the insulating layer after roughening treatment is small, can also be formed
The insulating layer of high dhering strength is presented in this way, therefore significantly assists in the miniaturization of circuit layout.It should be noted that in the present invention
In, the dhering strength of insulating layer and conductor layer refer to by conductor layer relative to insulating layer with vertical direction (90 degree of directions) tearing when
Peel strength (90 degree of peel strengths), can by measurement using cupping machine by conductor layer relative to insulating layer with vertical
Peel strength when direction (90 degree of directions) is torn acquires.As cupping machine, it can enumerate such as (strain) TSE's
" AC-50C-SL " etc..
In other embodiments, above-mentioned prepreg can be used to manufacture in printed wiring board of the invention.Manufacture
Method is substantially same as the case where using adhesive film.
[semiconductor device]
Using printed wiring board of the invention, semiconductor device can be manufactured.Printed wiring board of the invention is although be thin
Type can be advantageous even if can also inhibit warpage in the installation procedure using the component of high soft solder Reflow Soldering temperature
Ground mitigates the problems such as poor contact of circuit modifications, component.
In one embodiment, printed wiring board of the invention use peak temperature for 260 DEG C of soft solders high in this way
In the installation procedure of Reflow Soldering temperature, the warpage of printed wiring board can be suppressed to less than 40 μm.In the present invention, track
When the warpage of road plate is the buckling behavior using the 10mm square part in image moire device observation printed wiring board center, position
Move the value of the maximum height of data and the difference of minimum constructive height.When measurement, printed wiring board is being reappeared into IPC/JEDEC J-STD-
020C(“Moisture/Reflow Sensitivity Classification For Nonhermetic Solid State
Surface Mount Devices ", in July, 2004) in record Reflow Soldering temperature profile (lead free manufacture (lead-free
Assembly distribution map) is used;260 DEG C of peak temperature) reflow soldering apparatus in by after 1 time, according to being based on above-mentioned IPC/JEDEC
The Reflow Soldering temperature profile of J-STD-020C heats on one side by printed wiring board, for being set to printed wire
The gridline of the another side of plate, acquires displacement data.It should be noted that such as Japan ア Application ト can be enumerated as reflow soldering apparatus
System (strain), which makes " HAS-6116 " as image moire device, can enumerate such as Akrometrix system " TherMoire AXP ".
Using the solidfied material of the resin combination of the inorganic filling material for meeting geometry in particular Parameter Conditions containing specified amount
Formed insulating layer, even if the printed wiring board of the invention containing the insulating layer be it is slim, can also advantageously inhibit erector
Warpage in sequence.
As semiconductor device, can enumerate for electric product (such as computer, mobile phone, digital camera and TV etc.)
With the various semiconductor devices in the vehicles (such as motorcycle, automobile, electric car, ship and aircraft etc.) etc..
Semiconductor device of the invention (can partly be led by the conducting position installing component in printed wiring board of the invention
Body chip) it manufactures." conducting position " refers to " position of the electric signal in conduction printed wiring board ", and position can be table
Any one of face or the position of landfill.In addition, as long as semiconductor chip does not have using semiconductor as the circuit element of material
It is particularly limited to.
As long as the installation method of semiconductor chip when manufacturing semiconductor device of the invention makes semiconductor chip effectively
It functions, is not particularly limited, specifically, wire bonding installation method can be enumerated, flip-chip installation method, adopted
With (プ layers of ア ッ of Le De of ビ of プ な of バ Application of bumpless build up layer;BBUL installation method), using anisotropic conductive film
(ACF) installation method, using installation method of non-conductive film (NCF) etc..Wherein, it " uses bumpless build up layer (BBUL)
Installation method " be " semiconductor chip directly to be filled into the recess portion of printed wiring board, semiconductor chip and printed wire are made
The installation method of wiring connection on plate ".
[embodiment]
The present invention is specifically described with embodiment below, but the present invention is not restricted by the embodiments.It should
Illustrate, " part " and " % " in record refers respectively to " mass parts " and " quality % " as long as no other explanation below.
It is illustrated firstly for various measuring methods, evaluation method.
(preparation that substrate 1 is used in evaluation)
(1) preparation of internal layer circuit substrate
By form internal layer circuit glass cloth base material epoxy resin two-sided copper foil covered plywood (18 μm of the thickness of copper foil,
The thickness 0.3mm of substrate, Matsushita Electrician (strain) system " R5715ES ") two sides etch 1 μm using メ ッ Network (strain) system " CZ8100 ",
Carry out the roughening treatment on copper surface.
(2) lamination of adhesive film
It is pressurizeed laminating machine ((strain) name mechanism makees made " MVLP-500 ") using intermittent vacuum, by embodiment and comparative example
The adhesive film of middle production in such a way that resin composition layer is engaged with internal layer circuit substrate, be stacked on the two of internal layer circuit substrate
Face.Lamination is by carrying out decompression in 30 seconds, pressing air pressure 13hPa or less afterwards, under conditions of 100 DEG C, pressure 0.74MPa
It carries out within 30 seconds.
(3) solidification of resin composition layer
After lamination, supporter is removed from the two sides of substrate.Then, with 100 DEG C, 30 minutes and then 170 DEG C, 30 minutes
Condition of cure make resin composition layer carry out heat cure, formed insulating layer.
(4) roughening treatment
After forming insulating layer, by substrate, in swelling liquid, (ア ト テ ッ Network ジ ャ パ Application (strain) makes " ス エ リ Application グ デ ィ ッ プ セ
キ ュ リ ガ Application ト P ", the aqueous solution containing diethylene glycol monobutyl ether and sodium hydroxide) in 80 DEG C impregnate 5 minutes, aoxidizing
(ア ト テ ッ Network ジ ャ パ Application (strain) makes " U Application セ Application ト レ ー ト U Application パ Network ト CP ", KMnO for agent4: 60g/L, NaOH:40g/L
Aqueous solution) in 80 DEG C impregnate 10 minutes, finally neutralizer (ア ト テ ッ Network ジ ャ パ Application (strain) make " リ ダ Network シ ョ Application ソ リ
ュ ー シ ョ Application セ キ ュ リ ガ Application ト P ", sulfuric acid aqueous hydroxylamine) in 40 DEG C impregnate 5 minutes.Then, make it dry at 80 DEG C
Dry 30 minutes.Resulting substrate is known as " substrate 1a ".
It should be noted that implementing the operation of above-mentioned (2)~(4) as described below about embodiment 6 and comparative example 5, obtaining base
Plate 1a;
It is viscous by what is made in embodiment and comparative example using vacuum pressure device (Beichuan essence machine (strain) makes " VH1-1603 ")
Connect the two sides that film is stacked on internal layer circuit substrate in such a way that resin composition layer is engaged with internal layer circuit substrate.Lamination by
1x10-3Under the decompression of MPa, 100 DEG C, press 30 minutes under conditions of pressure 1.0MPa, be then warming up to 180 DEG C with 10 minutes
Afterwards, 30 minutes are pressed under conditions of 180 DEG C, pressure 1.0MPa to carry out.Resin composition layer heat cure is formed as a result,
Insulating layer.Roughening treatment in addition in swelling liquid in 60 DEG C impregnate 5 minutes, in oxidant in 80 DEG C impregnate 5 minutes other than,
It is other same as above-mentioned (4).
(5) formation of conductor layer
According to semi-additive process, conductor layer is formed in surface of insulating layer as described below;
Substrate 1a is being contained into PdCl2Non-electrolytic plating solution in, 40 DEG C dipping after five minutes, in non-electrolytic copper plating
It is impregnated 20 minutes in liquid, at 25 DEG C.Then, it is heated 30 minutes at 150 DEG C, after being made annealing treatment, forms underseal, utilize
Etching forms pattern.Then, copper sulfate bath plating is carried out, 25 μm of thickness of conductor layer is formed, is carried out at 180 DEG C 30 minutes
Annealing.Resulting substrate is known as " substrate 1b ".
(preparation that substrate 2 is used in evaluation)
(1) preparation of internal substrate
As internal substrate, preparation all removes the two-sided copper foil of glass cloth base material epoxy resin two-sided copper foil covered plywood
Gone without covering (unclad) plate (100 μm of thickness).As glass cloth base material epoxy resin two-sided copper foil covered plywood, use
Mitsubishi ガ ス chemistry (strain) system " HL832NSF-LCA " (size 100mm × 150mm, 100 μm of the thickness of base substrate, thermal expansion
4ppm/ DEG C of coefficient, bending elastic modulus 34GPa, surface copper circuit 16 μm of thickness).
(2) lamination of adhesive film
Using intermittent vacuum pressurization laminating machine, (2 stages of ニ チ go ー モ ー ト Application (strain) system stack laminating machine
" CVP700 "), in a manner of making resin composition layer connect with internal substrate, the bonding that will make in embodiment and comparative example
Film layer is laminated on the two-sided of internal substrate.Implementation of such as getting off is laminated: decompression 30 seconds, after making air pressure 13hPa or less, in 100 DEG C, pressure
Press it 30 seconds.Then, hot pressing in 60 seconds is carried out in the condition of 100 DEG C, pressure 0.5MPa.
(3) solidification of resin composition layer
After lamination, supporter is removed from substrate.Then, with 190 DEG C, 90 minutes conditions of cure by resin combination
Nitride layer carries out heat cure, forms insulating layer.Resulting substrate is known as " substrate 2a ".
The measurement > of the specific surface area (S) of < inorganic filling material
The specific surface area of inorganic filling material uses automatic specific area measuring device ((strain) マ ウ Application テ ッ Network system
" Macsorb HM-1210 "), it is acquired using nitrogen BET method.
The measurement > of the average grain diameter (R) of < inorganic filling material
Inorganic filling material 0.01g, nonionic system dispersing agent (Nippon Yushi (Co., Ltd.) are added in the bottle of 20ml
" T208.5 ") 0.2g, pure water 10g, are dispersed using the ultrasonic wave that sonic washing machine carries out 10 minutes, prepare sample.Then, exist
Sample is put into laser diffraction formula particle size distribution device ((strain) Shimadzu Seisakusho Ltd. system " SALD2200 "), makes its circulation on one side
10 minutes ultrasonic waves are irradiated on one side.Then, stop ultrasonic wave, size distribution is carried out in the state of maintaining the circulation of sample
Measurement, acquires the average grain diameter (R) of inorganic filling material.It should be noted that refractive index when measurement is set as 1.45-0.001i.
The calculating > of < geometric shape parameters A
The value of the specific surface area (S) of inorganic filling material, average grain diameter (R) and density (ρ) is substituted into following formula (1), is calculated
Geometric shape parameters A,
Formula (1): ρ/6 A=SR.
The calculating > of < geometric shape parameters B
The insulating layer in one side for being stacked on substrate 1a uses FIB-SEM set composite (SII Na ノ テ Network ノ ロ
ジ ー (strain) makes " SMI3050SE "), cross-section observation is carried out with 14000 times of observation multiplying power.By resulting FIB-SEM picture, use
Image processing software ((strain) Leica system " QWin V3 ") measures the perimeter of the existing inorganic filling material particle in insulating layer
(L) and area.It should be noted that for the unclear inorganic filling material particle of general image, the feint nothing of profile is avoided
Any 50 inorganic filling material particles of machine packing material particle, every 1 sample are measured.It inorganic is filled out by resulting
The area of material particles is filled, the perimeter (circumference with the positive round of its homalographic is calculated;Lc).The value of L and Lc is substituted into following formula (2),
For each inorganic filling material particle, geometric shape parameters B is calculated, obtains average value and its distribution of geometric shape parameters B,
Formula (2): B=Lc/L.
The measurement > of the Average crystallite diameter of < inorganic filling material
The Average crystallite diameter of inorganic filling material is acquired according to following step.Firstly, fixed on glass specimen plate
Inorganic filling material prepares sample panel.The sample panel is arranged in Wide angle X-ray diffraction device ((strain) リ ガ Network system " Multi
FLEX ") in, diffraction pattern is measured using Wide angle X-ray diffraction bounce technique.X-ray source is CuK α, and detector is scintillation detector,
Power is 40kV, 40mA.By the SiO based on resulting diffraction pattern2The diffracted ray in Quarts (101) face is strangled using thanking
(Scherrer) formula calculates crystallite diameter.
The evaluation > of < dispersion stabilization
For the adhesive film made in embodiment and comparative example, using microscope ((strain) KEYENCE system " VH-2250 ") with
Agglutination particle in 1000 times of observation multiplying power observation resin composition layer.The dispersion stabilization of resin combination is according to below
Benchmark is evaluated,
Evaluation criteria:
Zero: 10 μm or more of agglutination particle is in 10 visuals field less than 2
×: 10 μm or more of agglutination particle is 2 or more in 10 visuals field.
The measurement > of < lowest melt viscosity
Resin composition layer for the adhesive film made in embodiment and comparative example, uses measurement of dynamic viscoelasticity device
((strain) ユ ー ビ ー エ system system " Rheosol-G3000 ") measures melt viscosity.For sample resin combination 1g, use
The parallel-plate of diameter 18mm is warming up to 200 DEG C from 60 DEG C of initial temperature with 5 DEG C/min of heating rate, with measuring temperature interval
For 2.5 DEG C, the determination condition measurement dynamic viscoelastic modulus of vibration 1Hz, degree of skewness (askew body) 1deg, it is viscous to measure minimum melting
Degree.Lamination is evaluated according to benchmark below,
Evaluation criteria:
Zero: lowest melt viscosity is that 30000 pools are following
×: lowest melt viscosity is higher than 30000 pools.
The evaluation > of < warpage
By substrate 2a (n=5) reappear 260 DEG C of peak temperature soft solder Reflow Soldering temperature reflow soldering apparatus (Japanese ア
Application ト system (strain) makes " HAS-6116 ") in pass through primary (Reflow Soldering temperature profile is according to IPC/JEDEC J-STD-020C).It connects
, using image moire device (Akrometrix society system " TherMoire AXP "), using according to IPC/JEDEC J-STD-
Substrate is heated below the Reflow Soldering temperature profile of 020C (260 DEG C of peak temperature), based on the gridline configured in thereon
Measure the displacement of the 10mm square part of substrate center.Warpage is evaluated according to evaluation criteria below,
Evaluation criteria:
Zero: for all 5 samples, the maximum height of the displacement data of entire temperature range and the difference of minimum constructive height are small
In 40 μm
×: at least one sample, the maximum height of the displacement data of entire temperature range and the difference of minimum constructive height are
40 μm or more.
The measurement > of < arithmetic average roughness (Ra)
For substrate 1a, non-contact type surface roughness meter (ビ ー U イ Application ス ツルメン Star society system " WYKO is used
NT3300 "), it is that numerical value obtained by 92 μm of 121 μ m acquires Ra value as measurement range using VSI contact mode, 50 times of lens.
As measured value and finding out randomly selected 10 points of average value.
The measurement > of the dhering strength of < conductor layer
The measurement of insulating layer and the dhering strength of conductor layer is carried out for evaluating substrate 1b according to JIS C6481.Specifically
Ground introduces the notch of the part of width 10mm, length 100mm in the conductor layer of substrate 1b, one end is removed, is grabbed with fixture
Firmly, the loading (kgf/cm) when vertically tearing 35mm with 50mm/ minutes speed at room temperature is measured, is acquired closely sealed strong
Degree.
The measurement > of < coefficient of linear thermal expansion
The adhesive film made in embodiment and comparative example is heated 90 minutes at 190 DEG C, resin composition layer is made to carry out heat
Solidification.Then, supporter is removed, obtains the solidfied material of sheet.By the solidfied material of resulting sheet be cut into width about 5mm,
The test film of length about 15mm, using thermo-mechanical analysis device ((strain) リ ガ Network system " Thermo Plus TMA8310 "), with drawing
It stretches load method and carries out thermo-mechanical analysis.In detail, by test film assembly in above-mentioned thermo-mechanical analysis device after, load 1g,
METHOD FOR CONTINUOUS DETERMINATION 2 times under the determination condition that 5 DEG C/min of heating rate.Calculate the range from 25 DEG C to 150 DEG C in the 2nd measurement
The coefficient of mean linear thermal expansion.
< fills the evaluation > in the gap of via hole
The evaluation for filling the gap of via hole is carried out according to following step:
(1) formation of through-hole
Using CO2 Laser Processing Equipment for Joining ((strain) Hitachi system " LC-2E21B/1C "), it is being stacked on substrate 1a
One side on insulating layer on, formed 60 μm of top diameter (ト ッ プ diameter), 50 μm of base diameter (ボ ト system diameter) through-hole;
(2) formation of via hole is filled
After forming through-hole, insulating layer is roughened, forms conductor layer.The formation of roughening treatment and conductor layer
It is equally carried out with (the evaluation preparation of substrate 1).Conductor metal is also filled inside through-hole as a result, obtains filling via hole;
(3) evaluation in gap
It uses scanning electron microscope (SEM) ((strain) Hitachi Ha イ テ Network ノ ロ ジ ー ズ system, model " SU-1500 ")
Cross-section observation is carried out to the filling via hole of formation.Situation of the number less than 2 that 10 are filled the gap in via hole is set
For "○", the situation that the number that 10 are filled the gap in via hole is 2 or more is set as "×".
Each physical property and geometric shape parameters A, B of inorganic filling material used in embodiment and comparative example, which summarize, is shown in table
1。
[table 1]
。
It should be noted that the content of particle of the geometric shape parameters B less than 0.8 is 36 several %, especially for IMSIL A-8
Ground, geometric shape parameters B are that the content of 0.75 particle below is 16 several %, particle of the geometric shape parameters B greater than 0.9
Content is 12 several %, and particularly, the content for the particle that geometric shape parameters B is 0.94 or more is 0 several %.In addition, for
The content of the particle of IMSIL A-25, geometric shape parameters B less than 0.8 is 26 several %, and particularly, geometric shape parameters B is
The content of 0.75 particle below is 20 several %, and the content of particle of the geometric shape parameters B greater than 0.9 is 14 several %, especially
Ground, the content for the particle that geometric shape parameters B is 0.94 or more are 0 several %.
1 > of < embodiment
(1) preparation of resin varnish
By 20 parts of liquid bisphenol A type epoxy resin (epoxide equivalent 187, Mitsubishi Chemical's (strain) system " jER828EL "), biphenyl
30 parts of type epoxy resin (epoxide equivalent 276, Japanese chemical drug (strain) make " NC3000 "), tetraphenyl ethane type epoxy resin (epoxy
Equivalent 198, Mitsubishi Chemical's (strain) system " jER1031S ") 5 parts, curable type bisphenol A type epoxy resin (epoxide equivalent about 3000~
5000, Mitsubishi Chemical's (strain) system " jER1010 ") it is dissolved in the mixing that the mass ratio of methyl ethyl ketone (MEK) and cyclohexanone is 1:1
The resin solution that 50 mass % of nonvolatile component is formed in solvent makes the tree of 50 mass % of the nonvolatile component while stirring
5 parts of lipoprotein solution dissolve by heating in MEK20 parts and 10 parts of cyclohexanone of in the mixed solvent.The line style of the skeleton containing triazine is mixed thereto
10 parts of phenolic aldehyde system curing agent (the MEK solution that hydroxyl equivalent 125, DIC (strain) make " LA-7054 ", solid state component 60%), line style phenol
6 parts of aldehyde system curing agent (hydroxyl equivalent 105, DIC (strain) system " TD2090 "), amine system curing accelerator (4-dimethylaminopyridine
(DMAP), the MEK solution of 5 mass % of solid state component) 3 parts, with N- phenyl -3- TSL 8330 (SHIN-ETSU HANTOTAI's chemistry
(strain) system " KBM573 ") crystalline silica (the Unimin society system " IMSIL A-8 ", average grain diameter that are surface-treated
1.38 μm, 20 μm of maximum particle diameter, specific surface area 6.54m2/ g, density 2.65g/cm3, Average crystallite diameter 1000) 180 parts, resistance
Fire agent (three light (strain) make " HCA-HQ ", 10- (2,5- dihydroxy phenyl) -10- hydrogen -9- oxa- -10- phospho hetero phenanthrene -10- oxide,
2 μm of average grain diameter) 5 parts, it is uniformly dispersing using high speed rotation mixer, prepare resin varnish.It should be noted that in resin varnish
Preparation used in the global density of nonvolatile component other than inorganic filling material be about 1.2g/cm3。
(2) production of adhesive film
As supporter, prepare the polyethylene terephthalate film (38 μm of the thickness, リ that have alkyd resin system release layer
Application テ ッ Network (strain) system, " AL5 ").On the supporter, the resin for being equably coated with above-mentioned preparation using chill coating machine is clear
Paint makes it dry 6 minutes 80~120 DEG C (100 DEG C average), forms resin composition layer.Resin composition layer with a thickness of
40 μm, the residual solvent amount in resin combination is about 2 mass %.Then, on the surface of resin composition layer, as protection
Film, fitting polypropylene screen (the special paper of prince (strain) system, roll up simultaneously by the smooth surface side of " ア Le Off ァ Application MA-411 ", 15 μm of thickness
It is coiled into web-like.The adhesive film of web-like is cut into width 507mm, obtains the adhesive film of 507mm × 336mm size.
2 > of < embodiment
In addition to using 10 parts of biphenyl type epoxy resin (epoxide equivalent 276, Japanese chemical drug (strain) make " NC3000 ") and sub- naphthalene
18 parts of base ether type epoxy (epoxide equivalent 250, DIC (strain) system " HP6000 ") to replace biphenyl type epoxy resin, (work as by epoxy
Amount 276, Japanese chemical drug (strain) make " NC3000 ") other than 30 parts, other to prepare resin varnish similarly to Example 1, production is viscous
Connect film.
3 > of < embodiment
In addition to using 12 parts of naphthol novolac system curing agent (hydroxyl equivalent 215, Nippon Steel live aurification (strain) system " SN485 ")
To replace 6 parts of line style phenolic aldehyde system curing agent (hydroxyl equivalent 105, DIC (strain) system " TD2090 ") and N- phenyl -3- ammonia will be used
Crystalline silica (the Unimin that base propyl trimethoxy silicane (SHIN-ETSU HANTOTAI's chemistry (strain) system " KBM573 ") is surface-treated
Society's system " IMSIL A-8 ") usage amount change into other than 210 parts, other to prepare resin varnish similarly to Example 1, production
Adhesive film.
4 > of < embodiment
In addition to using phenoxy resin, (Mitsubishi Chemical's (strain) makes the MEK/ ring of " YL7553BH30 ", 30 mass % of solid state component
Hexanone=1/1 solution) 8 parts replace curable type bisphenol A type epoxy resin (epoxide equivalent about 3000~5000, Mitsubishi Chemical's (strain)
Make " jER1010 ") other than, it is other to prepare resin varnish similarly to Example 1, make adhesive film.
5 > of < embodiment
It is carried out in addition to using with N- phenyl -3- TSL 8330 (SHIN-ETSU HANTOTAI's chemistry (strain) system " KBM573 ")
Crystalline silica (Unimin society system " IMSIL A-25 ", 2.55 μm of average grain diameter, 20 μm of maximum particle diameter, the ratio of surface treatment
Surface area 5.87m2/ g, density 2.65g/cm3, Average crystallite diameter 1400), to replace with N- phenyl -3- aminopropyl front three
Crystalline silica (the Unimin society system " IMSIL that oxysilane (SHIN-ETSU HANTOTAI's chemistry (strain) system " KBM573 ") is surface-treated
A-8 ") other than 180 parts, it is other to prepare resin varnish similarly to Example 1, make adhesive film.
6 > of < embodiment
In addition to table will have been carried out with N- phenyl -3- TSL 8330 (SHIN-ETSU HANTOTAI's chemistry (strain) system " KBM573 ")
Crystalline silica (Unimin society system " IMSIL A-8 ", 1.38 μm of average grain diameter, 20 μm of the maximum particle diameter, specific surface of surface treatment
Product 6.54m2/ g, density 2.65g/cm3, Average crystallite diameter 1000) usage amount change into other than 400 parts, it is other with implement
Example 1 is prepared as resin varnish, makes adhesive film.
1 > of < comparative example
It is carried out in addition to using with N- phenyl -3- TSL 8330 (SHIN-ETSU HANTOTAI's chemistry (strain) system " KBM573 ")
(ア De マ テ ッ Network ス (strain) makes " SO-C2 ", 0.90 μm of average grain diameter, specific surface area to the spherical silicon dioxide of surface treatment
5.75m2/ g, density 2.2g/cm3) 150 parts replace with N- phenyl -3- TSL 8330 (SHIN-ETSU HANTOTAI's chemistry (strain)
System " KBM573 ") other than 180 parts of crystalline silica (Unimin society system " IMSIL A-8 ") being surface-treated, it is other
Resin varnish is prepared similarly to Example 1, makes adhesive film.
2 > of < comparative example
It is carried out in addition to using with N- phenyl -3- TSL 8330 (SHIN-ETSU HANTOTAI's chemistry (strain) system " KBM573 ")
(ア De マ テ ッ Network ス (strain) makes " SO-C6 ", 2.06 μm of average grain diameter, specific surface area to the spherical silicon dioxide of surface treatment
2.15m2/ g, density 2.2g/cm3) 150 parts replace with N- phenyl -3- TSL 8330 (SHIN-ETSU HANTOTAI's chemistry (strain)
System " KBM573 ") other than 180 parts of crystalline silica (Unimin society system " IMSIL A-8 ") being surface-treated, it is other
Resin varnish is prepared similarly to Example 1, makes adhesive film.
3 > of < comparative example
It is carried out in addition to using with N- phenyl -3- TSL 8330 (SHIN-ETSU HANTOTAI's chemistry (strain) system " KBM573 ")
(imperial gloomy (strain) makes " VX-SR ", 1.30 μm of average grain diameter, specific surface area 11.94m to the broken shape silica of surface treatment2/g、
Density 2.65g/cm3, Average crystallite diameter 1900) 180 parts replace with N- phenyl -3- TSL 8330
The crystalline silica (Unimin society system " IMSIL A-8 ") that (SHIN-ETSU HANTOTAI's chemistry (strain) system " KBM573 ") is surface-treated
It is other to prepare resin varnish similarly to Example 1 other than 180 parts, make adhesive film.
4 > of < comparative example
In addition to table will have been carried out with N- phenyl -3- TSL 8330 (SHIN-ETSU HANTOTAI's chemistry (strain) system " KBM573 ")
The usage amount of the crystalline silica (Unimin society system " IMSIL A-8 ") of surface treatment is changed into other than 80 parts, other and implementation
Example 1 is prepared as resin varnish, makes adhesive film.
5 > of < comparative example
In addition to table will have been carried out with N- phenyl -3- TSL 8330 (SHIN-ETSU HANTOTAI's chemistry (strain) system " KBM573 ")
The usage amount of the crystalline silica (Unimin society system " IMSIL A-8 ") of surface treatment is changed into other than 480 parts, other and implementation
Example 1 is prepared as resin varnish, makes adhesive film.
[table 2]
。
Claims (14)
1. resin combination is the resin compositions for insulating layer of printed wiring board, wherein
When nonvolatile component in resin combination is set as 100 volume %, the content of inorganic filling material is 40~75 volume %,
The average grain diameter of inorganic filling material be 0.01 μm or more and 4 μm hereinafter,
By formula: the geometric shape parameters A for the inorganic filling material that A=SR ρ/6 is indicated meets 20≤6A≤40,
In formula, S indicates the specific surface area of inorganic filling material, and R indicates the average grain diameter of inorganic filling material, and ρ indicates inorganic and fills out
Fill the density of material;Wherein, the unit of specific surface area is m2/ g, the unit of average grain diameter are μm that the unit of density is g/cm3。
2. resin combination is the resin compositions for insulating layer of printed wiring board, wherein
When nonvolatile component in resin combination is set as 100 volume %, the content of inorganic filling material is 40~75 volume %,
The average grain diameter of inorganic filling material be 0.01 μm or more and 4 μm hereinafter,
By formula: B=Lc/L indicate inorganic filling material geometric shape parameters B average value be 0.8 or more and 0.9 hereinafter,
In formula, L indicates that the perimeter of the inorganic filling material in defined section, Lc indicate and the inorganic fill material in above-mentioned section
The sectional area of material is the perimeter of the positive round of homalographic;Wherein, the unit of perimeter is μm.
3. resin combination according to claim 1 or 2, wherein the Average crystallite diameter of inorganic filling material is 1800
Angstrom or less.
4. resin combination according to claim 1 or 2, wherein the specific surface area of inorganic filling material is 3~10m2/g。
5. resin combination according to claim 1 or 2, wherein the average grain diameter of inorganic filling material be 0.05 μm with
On.
6. resin combination according to claim 1 or 2, wherein the average grain diameter of inorganic filling material is 3 μm or less.
7. resin combination according to claim 1 or 2, wherein inorganic filling material is to make Average crystallite diameter
Obtained by the tufted agglutinator dispersion of 1800 angstroms of crystallite particles below, the maximum particle diameter of the tufted agglutinator is 20 μm or less.
8. resin combination according to claim 1 or 2, wherein inorganic filling material contains crystallinity inorganic fill material
Material, when whole inorganic filling materials are set as 100 mass %, the content of the crystallinity inorganic filling material is 50 mass % or more.
9. resin combination according to claim 8, wherein crystallinity inorganic filling material is crystalline silica.
10. resin combination according to claim 1 or 2, further contains epoxy resin and curing agent.
11. resin combination according to claim 1 or 2 is interlayer insulating film resin combination.
12. sheet laminated material contains the resin composition layer formed by resin combination of any of claims 1 or 2.
13. printed wiring board contains the insulating layer formed using the solidfied material of resin combination described in as claimed in claim 1 or 22.
14. semiconductor device contains the printed wiring board described in claim 13.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014090644A JP6269294B2 (en) | 2014-04-24 | 2014-04-24 | Resin composition for insulating layer of printed wiring board |
JP2014-090644 | 2014-04-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105017721A CN105017721A (en) | 2015-11-04 |
CN105017721B true CN105017721B (en) | 2018-12-11 |
Family
ID=54408047
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510182552.3A Active CN105017721B (en) | 2014-04-24 | 2015-04-17 | Resin composition for insulating layer of printed wiring board |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6269294B2 (en) |
KR (1) | KR102293385B1 (en) |
CN (1) | CN105017721B (en) |
TW (1) | TWI666268B (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6657865B2 (en) * | 2015-12-01 | 2020-03-04 | 味の素株式会社 | Resin sheet |
JP6947246B2 (en) * | 2015-12-16 | 2021-10-13 | 味の素株式会社 | Prepreg |
JP6710955B2 (en) * | 2015-12-16 | 2020-06-17 | 味の素株式会社 | Prepreg |
TWI704196B (en) * | 2016-03-29 | 2020-09-11 | 日商拓自達電線股份有限公司 | Conductive paint and manufacturing method of shielding package body using the same |
JP6672953B2 (en) * | 2016-03-29 | 2020-03-25 | 味の素株式会社 | Resin sheet |
JP7114214B2 (en) * | 2016-05-24 | 2022-08-08 | 味の素株式会社 | adhesive film |
CN106010128B (en) * | 2016-07-26 | 2018-08-24 | 江苏中任油漆有限公司 | A kind of flame-resistant insulation epoxy coating and preparation method thereof that wiring board uses |
JP7279319B2 (en) * | 2017-09-04 | 2023-05-23 | 味の素株式会社 | resin composition |
CN109757023B (en) * | 2017-11-08 | 2022-04-26 | 广东生益科技股份有限公司 | Printed circuit board and manufacturing method thereof |
JP6965823B2 (en) * | 2018-05-09 | 2021-11-10 | 味の素株式会社 | Adhesive sheet with support |
JPWO2020129248A1 (en) * | 2018-12-21 | 2021-12-02 | 昭和電工マテリアルズ株式会社 | Encapsulating resin composition and electronic component equipment |
CN110831350A (en) * | 2019-11-14 | 2020-02-21 | 四会富仕电子科技股份有限公司 | Method for manufacturing bottomless copper circuit board |
JP7264194B2 (en) * | 2020-06-25 | 2023-04-25 | 味の素株式会社 | resin composition |
JP7615892B2 (en) | 2021-06-01 | 2025-01-17 | 味の素株式会社 | Resin Sheet |
CN113621216B (en) * | 2021-08-16 | 2023-06-02 | 广东生益科技股份有限公司 | Resin composition and application thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102770489A (en) * | 2010-01-25 | 2012-11-07 | 大科能树脂有限公司 | Resin composition for irregular shape extrusion molding and irregularly shaped extrusion molded resin article |
CN103547634A (en) * | 2011-05-02 | 2014-01-29 | 松下电器产业株式会社 | Thermosetting resin composition, prepreg, laminate, metal foil-clad laminate, and circuit board |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH038715A (en) * | 1989-06-06 | 1991-01-16 | Showa Denko Kk | Aluminum hydroxide fine particle |
JPH065743A (en) * | 1992-06-16 | 1994-01-14 | Tonen Chem Corp | Liquid epoxy resin composition for sealing semiconductor |
JP4654475B2 (en) * | 1999-11-02 | 2011-03-23 | 住友ベークライト株式会社 | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
JP2003105064A (en) * | 2001-09-28 | 2003-04-09 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor sealing and semiconductor device |
JP2003147173A (en) | 2001-11-14 | 2003-05-21 | Sumitomo Bakelite Co Ltd | Resin composition, resin-coated metal foil, and multilayer printed circuit board |
JP2007126498A (en) | 2005-11-01 | 2007-05-24 | Hitachi Chem Co Ltd | Method for producing insulating resin adhesive sheet and method for producing printed wiring board using insulating resin adhesive sheet |
JP2009215457A (en) | 2008-03-11 | 2009-09-24 | Hitachi Chem Co Ltd | Resin composition, prepreg, and metal-clad laminated plate |
KR101148225B1 (en) * | 2008-09-01 | 2012-05-21 | 세키스이가가쿠 고교가부시키가이샤 | Method for producing laminate |
KR20110006627A (en) * | 2009-07-14 | 2011-01-20 | 아지노모토 가부시키가이샤 | Copper foil laminate |
JP5168312B2 (en) | 2010-04-28 | 2013-03-21 | 住友ベークライト株式会社 | Multilayer printed circuit board manufacturing method |
TW201817807A (en) * | 2012-05-31 | 2018-05-16 | 日商味之素股份有限公司 | Resin composition |
TWI657730B (en) * | 2012-05-31 | 2019-04-21 | 日商味之素股份有限公司 | Multilayer printed wiring board manufacturing method |
JP2014028880A (en) * | 2012-07-31 | 2014-02-13 | Ajinomoto Co Inc | Resin composition |
-
2014
- 2014-04-24 JP JP2014090644A patent/JP6269294B2/en active Active
-
2015
- 2015-03-26 TW TW104109756A patent/TWI666268B/en active
- 2015-04-17 CN CN201510182552.3A patent/CN105017721B/en active Active
- 2015-04-22 KR KR1020150056579A patent/KR102293385B1/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102770489A (en) * | 2010-01-25 | 2012-11-07 | 大科能树脂有限公司 | Resin composition for irregular shape extrusion molding and irregularly shaped extrusion molded resin article |
CN103547634A (en) * | 2011-05-02 | 2014-01-29 | 松下电器产业株式会社 | Thermosetting resin composition, prepreg, laminate, metal foil-clad laminate, and circuit board |
Also Published As
Publication number | Publication date |
---|---|
TW201542710A (en) | 2015-11-16 |
KR102293385B1 (en) | 2021-08-26 |
JP6269294B2 (en) | 2018-01-31 |
KR20150123179A (en) | 2015-11-03 |
CN105017721A (en) | 2015-11-04 |
TWI666268B (en) | 2019-07-21 |
JP2015211086A (en) | 2015-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105017721B (en) | Resin composition for insulating layer of printed wiring board | |
JP6801736B2 (en) | Resin composition, adhesive film, cured product, multilayer printed wiring board and semiconductor device | |
US9711446B2 (en) | Resin composition | |
TWI737649B (en) | Resin composition | |
KR102315466B1 (en) | Resin composition | |
TWI724026B (en) | Manufacturing method of wiring board, wiring board, and semiconductor device | |
CN107200974B (en) | Resin composition | |
CN107129589B (en) | Resin sheet with support | |
CN106995585B (en) | Resin sheet | |
JP6156020B2 (en) | Resin composition | |
JP2017059779A (en) | Method for manufacturing printed wiring board | |
CN109423013A (en) | Resin combination | |
TWI707611B (en) | Resin sheet with supporting body and manufacturing method of built-in circuit board of parts using it | |
JP6620457B2 (en) | Resin composition | |
JP6322989B2 (en) | Manufacturing method of component-embedded substrate | |
CN104349599B (en) | Method for manufacturing component mounting board | |
JP6398824B2 (en) | Resin sheet | |
JP6269401B2 (en) | Surface-treated inorganic filler, method for producing the inorganic filler, and resin composition containing the inorganic filler | |
JP6686394B2 (en) | Method for manufacturing semiconductor chip package | |
TWI709598B (en) | Roughened hardened body | |
JP2018101703A (en) | Method for manufacturing printed wiring board | |
JP6582807B2 (en) | Manufacturing method of resin sheet | |
JP6816566B2 (en) | Resin compositions, adhesive films, prepregs, multilayer printed wiring boards and semiconductor devices | |
TWI856132B (en) | Method for manufacturing printed wiring board and resin sheet with inorganic layer | |
JP6657567B2 (en) | Method for manufacturing resin sheet |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |