CN104993375A - 一种短腔长的分布反馈激光器 - Google Patents
一种短腔长的分布反馈激光器 Download PDFInfo
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- CN104993375A CN104993375A CN201510354846.XA CN201510354846A CN104993375A CN 104993375 A CN104993375 A CN 104993375A CN 201510354846 A CN201510354846 A CN 201510354846A CN 104993375 A CN104993375 A CN 104993375A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/0675—Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0035—Simulations of laser characteristics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
- H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
- H01S3/0623—Antireflective [AR]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0635—Thin film lasers in which light propagates in the plane of the thin film provided with a periodic structure, e.g. using distributed feed-back, grating couplers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
- H01S3/10023—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by functional association of additional optical elements, e.g. filters, gratings, reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/1305—Feedback control systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510354846.XA CN104993375A (zh) | 2015-06-24 | 2015-06-24 | 一种短腔长的分布反馈激光器 |
PCT/CN2016/086143 WO2016206570A1 (zh) | 2015-06-24 | 2016-06-17 | 一种短腔长的分布反馈激光器 |
US15/597,135 US20170256905A1 (en) | 2015-06-24 | 2017-05-16 | Distributed feedback laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510354846.XA CN104993375A (zh) | 2015-06-24 | 2015-06-24 | 一种短腔长的分布反馈激光器 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104993375A true CN104993375A (zh) | 2015-10-21 |
Family
ID=54305150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510354846.XA Pending CN104993375A (zh) | 2015-06-24 | 2015-06-24 | 一种短腔长的分布反馈激光器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20170256905A1 (zh) |
CN (1) | CN104993375A (zh) |
WO (1) | WO2016206570A1 (zh) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105490164A (zh) * | 2015-12-30 | 2016-04-13 | 华中科技大学 | 一种分布反馈激光器 |
CN105826813A (zh) * | 2016-05-06 | 2016-08-03 | 华中科技大学 | 一种基于高阶表面光栅的单模激光器 |
WO2016206570A1 (zh) * | 2015-06-24 | 2016-12-29 | 华中科技大学 | 一种短腔长的分布反馈激光器 |
CN106785829A (zh) * | 2017-01-10 | 2017-05-31 | 中国科学院长春光学精密机械与物理研究所 | 一种分布反馈激光器及其制作方法、分布反馈激光器阵列 |
CN108603980A (zh) * | 2015-11-12 | 2018-09-28 | Bb光电公司 | 具有介质结构的光子集成器件 |
CN111755946A (zh) * | 2020-06-30 | 2020-10-09 | 中国科学院半导体研究所 | 有源腔与无源腔交替结构的dfb激光器 |
CN111755950A (zh) * | 2020-06-30 | 2020-10-09 | 中国科学院半导体研究所 | 电极部分覆盖脊条的dfb激光器 |
CN111769437A (zh) * | 2020-07-21 | 2020-10-13 | 厦门市三安集成电路有限公司 | 布拉格光栅及其制备方法、分布反馈激光器 |
CN112713504A (zh) * | 2021-01-11 | 2021-04-27 | 宁波元芯光电子科技有限公司 | 热调谐dfb激光器 |
CN112993753A (zh) * | 2021-02-07 | 2021-06-18 | 桂林雷光科技有限公司 | 一种单片集成波导装置及其集成半导体芯片 |
CN113328339A (zh) * | 2021-05-27 | 2021-08-31 | 华中科技大学 | 一种高功率分布反馈激光器 |
US11146038B2 (en) | 2018-12-25 | 2021-10-12 | Changchun Institute Of Optics, Fine Mechanics And Physics, Chinese Academy Of Sciences | Semiconductor laser and fabrication method thereof |
WO2024130727A1 (zh) * | 2022-12-23 | 2024-06-27 | 华为技术有限公司 | 一种激光器、光模块及装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0548214A (ja) * | 1991-08-19 | 1993-02-26 | Tokyo Inst Of Technol | 分布反射型半導体レーザ |
US20100265980A1 (en) * | 2009-04-17 | 2010-10-21 | Fujitsu Limited | Semiconductor laser |
JP2013140842A (ja) * | 2011-12-28 | 2013-07-18 | Fujitsu Ltd | 半導体レーザ装置及び半導体レーザ装置の製造方法 |
US20150093121A1 (en) * | 2013-10-02 | 2015-04-02 | Fujitsu Limited | Optical semiconductor device, optical semiconductor device array, and optical transmitter module |
CN105075038A (zh) * | 2013-02-18 | 2015-11-18 | 古河电气工业株式会社 | 半导体激光元件、集成型半导体激光元件、以及半导体激光元件的制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0735635B1 (en) * | 1995-03-31 | 2000-08-02 | Canon Kabushiki Kaisha | Optical semiconductor apparatus, driving method therefor, light source apparatus and optical communication system using the same |
WO2010100738A1 (ja) * | 2009-03-05 | 2010-09-10 | 富士通株式会社 | 半導体レーザ、シリコン導波路基板、集積素子 |
US8265112B2 (en) * | 2009-03-26 | 2012-09-11 | Kaiam Corp. | Semiconductor laser device and circuit for and method of driving same |
CN103346475B (zh) * | 2013-05-31 | 2015-07-15 | 中国科学院半导体研究所 | 单片集成耦合腔窄线宽半导体激光器 |
CN104993375A (zh) * | 2015-06-24 | 2015-10-21 | 华中科技大学 | 一种短腔长的分布反馈激光器 |
-
2015
- 2015-06-24 CN CN201510354846.XA patent/CN104993375A/zh active Pending
-
2016
- 2016-06-17 WO PCT/CN2016/086143 patent/WO2016206570A1/zh active Application Filing
-
2017
- 2017-05-16 US US15/597,135 patent/US20170256905A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0548214A (ja) * | 1991-08-19 | 1993-02-26 | Tokyo Inst Of Technol | 分布反射型半導体レーザ |
US20100265980A1 (en) * | 2009-04-17 | 2010-10-21 | Fujitsu Limited | Semiconductor laser |
JP2013140842A (ja) * | 2011-12-28 | 2013-07-18 | Fujitsu Ltd | 半導体レーザ装置及び半導体レーザ装置の製造方法 |
CN105075038A (zh) * | 2013-02-18 | 2015-11-18 | 古河电气工业株式会社 | 半导体激光元件、集成型半导体激光元件、以及半导体激光元件的制造方法 |
US20150093121A1 (en) * | 2013-10-02 | 2015-04-02 | Fujitsu Limited | Optical semiconductor device, optical semiconductor device array, and optical transmitter module |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016206570A1 (zh) * | 2015-06-24 | 2016-12-29 | 华中科技大学 | 一种短腔长的分布反馈激光器 |
CN108603980A (zh) * | 2015-11-12 | 2018-09-28 | Bb光电公司 | 具有介质结构的光子集成器件 |
CN108603980B (zh) * | 2015-11-12 | 2020-07-28 | Bb光电公司 | 具有介质结构的光子集成器件 |
CN105490164A (zh) * | 2015-12-30 | 2016-04-13 | 华中科技大学 | 一种分布反馈激光器 |
CN105826813A (zh) * | 2016-05-06 | 2016-08-03 | 华中科技大学 | 一种基于高阶表面光栅的单模激光器 |
CN105826813B (zh) * | 2016-05-06 | 2019-02-05 | 华中科技大学 | 一种基于高阶表面光栅的单模激光器 |
CN106785829A (zh) * | 2017-01-10 | 2017-05-31 | 中国科学院长春光学精密机械与物理研究所 | 一种分布反馈激光器及其制作方法、分布反馈激光器阵列 |
CN106785829B (zh) * | 2017-01-10 | 2019-09-27 | 中国科学院长春光学精密机械与物理研究所 | 一种分布反馈激光器及其制作方法、分布反馈激光器阵列 |
US11146038B2 (en) | 2018-12-25 | 2021-10-12 | Changchun Institute Of Optics, Fine Mechanics And Physics, Chinese Academy Of Sciences | Semiconductor laser and fabrication method thereof |
CN111755946A (zh) * | 2020-06-30 | 2020-10-09 | 中国科学院半导体研究所 | 有源腔与无源腔交替结构的dfb激光器 |
CN111755950A (zh) * | 2020-06-30 | 2020-10-09 | 中国科学院半导体研究所 | 电极部分覆盖脊条的dfb激光器 |
CN111755950B (zh) * | 2020-06-30 | 2024-07-02 | 中国科学院半导体研究所 | 电极部分覆盖脊条的dfb激光器 |
CN111755946B (zh) * | 2020-06-30 | 2024-09-24 | 中国科学院半导体研究所 | 有源腔与无源腔交替结构的dfb激光器 |
CN111769437A (zh) * | 2020-07-21 | 2020-10-13 | 厦门市三安集成电路有限公司 | 布拉格光栅及其制备方法、分布反馈激光器 |
CN112713504A (zh) * | 2021-01-11 | 2021-04-27 | 宁波元芯光电子科技有限公司 | 热调谐dfb激光器 |
CN112993753A (zh) * | 2021-02-07 | 2021-06-18 | 桂林雷光科技有限公司 | 一种单片集成波导装置及其集成半导体芯片 |
CN113328339A (zh) * | 2021-05-27 | 2021-08-31 | 华中科技大学 | 一种高功率分布反馈激光器 |
WO2024130727A1 (zh) * | 2022-12-23 | 2024-06-27 | 华为技术有限公司 | 一种激光器、光模块及装置 |
Also Published As
Publication number | Publication date |
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WO2016206570A1 (zh) | 2016-12-29 |
US20170256905A1 (en) | 2017-09-07 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20181228 Address after: 315191 Unit 701, East Road, Jiangshan Town Science and Technology Park, Yinzhou District, Ningbo City, Zhejiang Province, 43 Applicant after: Ningbo Yuanxin Optoelectronic Technology Co., Ltd. Address before: 430023 New Technology Development Zone, East Lake, Wuhan, Hubei, 999 new high tech Road, A5, north 4, 7 floors, 701 units, 43 seats. Applicant before: Aorui PEAK (Wuhan) Electronic Technology Co Ltd |
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TA01 | Transfer of patent application right | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151021 |
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RJ01 | Rejection of invention patent application after publication |