CN104966869A - Three-pass high-performance filter bank with optional one output - Google Patents

Abstract

The present invention provides a high-performance filter bank with a three-pass band and one output, including: a single-pole three-throw switch chip for receiving input signals, and a UHF band half-collected half-separate structure connected to the first output end of the single-pole three-throw switch chip The filter is an S-band distributed structure filter connected to the second output end of the single-pole three-throw switch chip, and a VHF band full-set general structure filter connected to the third output end of the single-pole three-throw switch chip. The combination has the advantages of selectable frequency band output, small size, convenient use, light weight, high reliability, excellent electrical performance, simple structure, high yield, good batch consistency, low cost, and stable temperature performance.

Description

Three-pass high-performance filter bank with optional one output

technical field

The invention relates to a filter technology, in particular to a high-performance filter bank with a three-pass band and one output for self-selection.

Background technique

In recent years, with the rapid development of miniaturization of mobile communication, satellite communication and national defense electronic systems, high performance, low cost and miniaturization have become the development direction of the microwave/radio frequency field. The performance, size and reliability of microwave components Both sex and cost have put forward higher requirements. The miniaturization and light weight of microwave devices depends on the development of material science and technology and electromagnetic technology. The multilayer structure based on low-temperature co-firing technology (LTCC technology) greatly reduces the size of the device, which is the basis for the miniaturization and light weight of microwave passive devices. A good foundation has been laid. Filters have always been an important component of various microwave integrated circuits. The main indicators describing the performance of this component are: frequency range, insertion loss, standing wave ratio, reflection coefficient, phase balance, temperature stability, volume, weight, reliability etc.

Low-temperature co-fired ceramics is an electronic packaging technology. Using multilayer ceramic technology, passive components can be built inside the dielectric substrate, and active components can also be mounted on the surface of the substrate to form passive/active integration functions. module. LTCC technology has many advantages in terms of cost, integrated packaging, wiring line width and line spacing, low impedance metallization, design diversity and flexibility, and high frequency performance, and has become the mainstream technology of passive integration. It has the advantages of high Q value, easy to embed passive devices, good heat dissipation, high reliability, high temperature resistance, shock resistance, etc., using LTCC technology, it can be well processed into small size, high precision, good compactness, low loss small microwave devices. Because LTCC technology has the advantages of three-dimensional integration, it is widely used in the microwave frequency band to manufacture various microwave passive components to achieve high integration of passive components. The stacking technology based on the LTCC process can realize three-dimensional integration, so that various micro-orthogonal devices have many advantages such as small size, light weight, excellent performance, high reliability, good consistency in mass production performance, and low cost. The three-dimensional integrated structure features can realize a high-performance filter bank with a three-pass output and a self-selected output.

Contents of the invention

The purpose of the present invention is to provide a high-performance filter bank with a three-pass band optional one output, including: a single-pole three-throw switch chip receiving an input signal, and a UHF band half set connected to the first output terminal of the single-pole three-throw switch chip A total half-split structure filter, an S-band distributed structure filter connected to the second output terminal of the single-pole three-throw switch chip, and a VHF band full-set general structure filter connected to the third output terminal of the single-pole three-throw switch chip. The combination has the advantages of selectable frequency band output, small size, convenient use, light weight, high reliability, excellent electrical performance, simple structure, high yield, good batch consistency, low cost, and stable temperature performance.

According to one aspect of the present invention, the UHF band semi-lumped and semi-divided structure filter includes: a first input terminal connected to the first output terminal of the single-pole three-throw switch chip, a first input inductor connected to the first input terminal, and The first spiral inductor connected to the first input inductor, the third spiral inductor connected to the first input inductor, the first parallel capacitor connected to the output terminal of the first spiral inductor, and the third parallel capacitor connected to the output terminal of the second spiral inductor , a second output terminal, the first output inductor connected to the second output terminal, the second spiral inductor connected to the first output inductor, the fourth spiral inductor connected to the first output inductor, and the output terminal of the second spiral inductor The second parallel capacitor connected, the fourth parallel capacitor connected to the output end of the fourth spiral inductor, the first Z-shaped capacitor located below the spiral inductor and the parallel capacitor; the first spiral inductor and the third spiral inductor are arranged in parallel up and down; The second spiral inductor and the fourth spiral inductor are arranged in parallel up and down; the other ends of the first parallel capacitor, the second parallel capacitor, the third parallel capacitor and the fourth parallel capacitor are grounded.

According to another aspect of the present invention, the S-band distributed structure filter includes four stages of resonance, each stage of resonance has a three-layer board, and the S-band distributed structure filter further includes: The third input terminal connected to the two output terminals, the second input inductance connected to the third input terminal, the fourth output terminal, the second output inductance connected to the fourth output terminal, the second Z below the fourth-order resonance type capacitor; the middle layer plate of the first level resonance is connected to the second input inductance; the middle layer plate of the fourth level resonance is connected to the second output inductor.

According to another aspect of the present invention, the VHF band ensemble structure filter includes: a fifth input terminal connected to the third output terminal of the single-pole three-throw switch chip, a first parallel resonant unit connected to the fifth input terminal, and The first series resonant unit connected to the fifth input end, the second parallel resonant unit connected to the output end of the first series resonant unit, the second series resonant unit connected to the output end of the first series resonant unit, and the first parallel resonant unit The first zero-point capacitance connected to the output terminal, the second zero-point capacitance connected in parallel with the first series resonant unit, the third zero-point capacitance connected with the output end of the second parallel resonant unit, and the fourth zero-point capacitance connected in parallel with the second series resonant unit Zero-point capacitance; the parallel resonant unit is composed of a spiral inductor and a parallel capacitor connected in parallel; the series resonant unit is composed of a spiral inductor and a parallel capacitor connected in series.

Compared with the prior art, the present invention has the following advantages: (1) the output signal can be freely selected in three different frequency bands; (2) simple and convenient to use; (3) small in size, light in weight and high in reliability; (4) Excellent electrical performance; (5) Low cost; (6) The circuit realizes a simple structure and can realize mass production.

The present invention will be further described below in conjunction with the accompanying drawings.

Description of drawings

Fig. 1 is a block diagram of the overall structure of a high-performance filter bank with a three-pass band with optional output of the present invention.

Fig. 2 is a schematic structural diagram of the single-pole three-throw switch chip WKD103000060 of the present invention.

Fig. 3 is a structural schematic diagram of a UHF band semi-lumped and semi-distributed structure filter of the present invention.

Fig. 4 is a schematic diagram of the structure of the S-band distributed structure filter of the present invention.

Fig. 5 is a structural schematic diagram of the VHF band ensemble general structure filter of the present invention.

Fig. 6 is the insertion loss and standing wave characteristic curves of the UHF band semi-lumped and semi-distributed structure filter of the present invention.

Fig. 7 is the insertion loss and standing wave characteristic curves of the S-band distributed structure filter of the present invention.

Fig. 8 is the insertion loss and standing wave characteristic curves of the VHF band ensemble filter of the present invention.

Detailed ways

Combined with Figure 1, a high-performance filter bank with multiple frequency bands can be selected, including: a single-pole three-throw switch chip for receiving input signals, and a UHF band semi-lumped and half-separated structure filter connected to the first output terminal of the single-pole three-throw switch chip A device, an S-band distributed structure filter connected to the second output end of the single-pole three-throw switch chip, and a VHF band full-set general structure filter connected to the third output end of the single-pole three-throw switch chip. The single-pole three-throw switch chip is a WKD102010040 chip, as shown in Figure 2, wherein the three output terminals RFout1, RFout2, and RFout3 are respectively connected to the UHF band half-integrated and half-divided structure filter, the S-band distributed structure filter, and the VHF band complete set Overall structure filter.

3, the UHF band semi-lumped and semi-distributed structure filter includes a surface-mounted input port P1 with a 50-ohm impedance, a first input inductance Lin1, a first spiral inductance L1, a connecting line T1, a first parallel capacitor C1, and a first parallel capacitor C1. Second spiral inductor L2, connecting line T2, second parallel capacitor C2, third spiral inductor L3, connecting line T3, third parallel capacitor C3, fourth spiral inductor L4, connecting line T4, fourth parallel capacitor C4, parallel capacitor plate C5, a first Z-shaped capacitor Z1, a first output inductor Lout1, and an output port P2 with a surface mount impedance of 50 ohms. In the UHF band semi-lumped and semi-distributed structure filter, one end of the first input inductor Lin1 is connected to the input port P1, and the other end is connected to one end of the first spiral inductor L1. At the same time, the first parallel capacitor C1 is connected through the first The line T1 is connected to this terminal of the first spiral inductor L1, wherein the spiral direction of the first spiral inductor L1 is from top to bottom, and there are two layers in total, and the first parallel capacitor C1 is divided into upper and lower layers. The third spiral inductor L3 is placed in parallel below the first spiral inductor L1, the third parallel capacitor C3 is placed in parallel below the first parallel capacitor C1 and the third parallel capacitor is connected to the third spiral inductor L3 through the third connection line T3. One end of the first output inductor Lout1 is connected to the output inductor P2, and the other end is connected to one end of the second spiral inductor L2. Meanwhile, the second parallel capacitor C2 is connected to this end of the second spiral inductor L2 through the second connection line T2. The fourth spiral inductor L4 is placed parallelly below the second spiral inductor L2, the fourth parallel capacitor C4 is parallelly placed below the second parallel capacitor C2 and the fourth parallel capacitor is connected to the fourth spiral inductor L4 through the fourth connection line T4. The first Z-shaped capacitor Z1 is placed in parallel directly above the first spiral inductor L1 , the second spiral inductor L2 , the first parallel capacitor C1 and the second parallel capacitor C2 . The parallel capacitor plate C5 is placed in parallel directly below the third parallel capacitor C3 and the fourth parallel capacitor C4. Among them, the spiral direction of the first spiral inductor L1 and the second spiral inductor L2 is from top to bottom, the spiral direction of the third spiral inductor L3 and the fourth spiral inductor L4 is from bottom to top, and the four inductors have two layers. 1. The second, third and fourth parallel capacitors C1, C2, C3 and C4 are divided into upper and lower boards, and the lower board of each parallel capacitor is grounded.

4, the S-band distributed structure filter includes a surface-mounted 50-ohm impedance input port P3, a second input inductance Lin2, a five-stage resonant unit U realized by a strip line, a second Z-type capacitor Z2, and a second Output inductor Lout2 and output port P4 with surface mount 50 ohm impedance. In the S-band distributed structure filter, one end of the second input inductance Lin2 is connected to the surface-mounted 50-ohm impedance input port P3, and the other end is connected to the first-stage middle plate M1 of the five-stage resonant unit U. The intermediate plate M5 of the fifth stage of the first-stage resonant unit U is connected to the output port P4 of the surface-mounted 50-ohm impedance through the second output inductance Lout2. The second Z-shaped capacitor is placed directly under the fifth-level resonant unit U. Among them, the first stage of the five-stage resonant unit U is composed of three-layer boards A1, M1 and B1, the second stage is composed of three-layer boards A2, M2 and B2, and the third stage is composed of three-layer boards A3 , M3 and B3, the fourth level is composed of three-layer boards A4, M4 and B4 and the fifth level is composed of three-layer boards A5, M5 and B5.

The structure of the second input inductance Lin2 in the present invention is as follows: the direction from the third input port P3 to the fourth output port P4 is the positive direction of the x-axis, and the direction perpendicular to the x-axis is the positive direction of the y-axis. The second input inductance Lin2 and the first The four input ports P4 are connected, and after being bent sequentially along the positive direction of the y-axis and the positive direction of the x-axis, they are connected to the middle plate M1 of the first-stage resonance.

In the present invention, the structure of the second output inductance Lout2 is as follows: taking the coordinate system of the second input inductance Lin2 as the standard, the output terminal of the second output inductance Lout2 is connected to the fourth output port P4, and sequentially along the positive direction of the y-axis and the negative direction of the x-axis It is connected with the middle laminate M5 of the fifth-level resonance.

In conjunction with Fig. 5, the VHF band full-set general structure filter includes the input port P5 of surface mount 50 ohm impedance, the first parallel resonant unit L5, C5, the first zero-point capacitor C55, the first series resonant unit L6, C6, the first Twenty-point capacitor C66, second parallel resonant unit L7, C7, third zero-point capacitor C77, second series resonant unit L8, C8, fourth zero-point capacitor C88, and surface-mounted 50-ohm impedance output port P6. In the VHF band ensemble structure filter, the input port P5 is connected to the first parallel resonant unit L5, C5, wherein the first parallel resonant unit L5, C5 is composed of the fifth spiral inductor L5 and the fifth parallel capacitor C5 in parallel, and the fifth The parallel capacitor C5 is arranged below the fifth spiral inductance L5 in parallel; the first zero point capacitor C55 is connected to the ground in series with the first part of the parallel resonant unit L5, C5, and the first zero point capacitor C55 is arranged in parallel below the fifth parallel capacitor C5; The first series resonance unit L6, C6 is connected to the input port P5, wherein the first series resonance unit L6, C6 is composed of the sixth spiral inductor L6 and the sixth series capacitor C6 connected in series, and the sixth series capacitor C6 is arranged in parallel with the sixth spiral inductor Below L6; the second zero-point capacitor C66 is connected in parallel with the second part of the series resonant unit L6, C6, and the second zero-point capacitor C66 is arranged in parallel below the sixth spiral inductor L6, and is on the same plane as the sixth series capacitor C6; The second parallel resonant unit L7, C7 is connected to the sixth series capacitor C6 in the first series resonant unit L6, C6, wherein the second parallel resonant unit L7, C7 is composed of the seventh spiral inductor L7 and the seventh parallel capacitor C7, The seventh parallel capacitor C7 is arranged in parallel above the seventh spiral inductance L7; the third zero-point capacitor C77 is connected to the ground in series with the third part of the parallel resonance unit L7, C7, and the third zero-point capacitor C77 is arranged in parallel on the seventh parallel capacitor C7 above; the second series resonance unit L8, C8 is connected to the second series capacitor C6 in the first series resonance unit L6, C6, wherein the fourth part of the series resonance unit L8, C8 is composed of the eighth spiral inductor L8, the eighth series capacitor Composed of C8 in series, the eighth series capacitor C8 is arranged in parallel above the eighth spiral inductance L8; the fourth zero point capacitor C88 is connected in parallel with the second series resonant unit L8 and C8, and the fourth zero point capacitor C44 is arranged in parallel on the eighth spiral inductor Above the inductor L8 is on the same plane as the eighth series capacitor C8; the output port P6 is connected to the eighth series capacitor C8.

The high-performance filter bank with a three-way optional output is realized by the multi-layer low-temperature co-fired ceramic technology, and its low-temperature co-fired ceramic material and metal pattern are sintered at a temperature of about 900 ° C, so it has very high reliability. Due to the three-dimensional integration and multi-layer folding structure and the metal shielding on the outer surface to achieve grounding and packaging, the volume is greatly reduced.

The single-pole three-throw switch chip WKD103000060 in the present invention works with 0/-5V or 5V/0V power supply, insertion loss in DC to 6GHz: 0.9dB, isolation: 40dB, input VSWR: 1.3:1, output VSWR : 1.3:1, switching time: 10ns. The UHF band semi-lumped and semi-distributed structure filter is only 4.5mm*3.2mm*1.5mm, its frequency range is 750-1060MHz, and the standing wave is about 30dB. The S-band distributed structure filter is only 4.5mm*3.2mm*1.5mm. Its performance can be seen from the following figure. The frequency range is 3-4.8GHz, and the standing wave is about 18dB. The size of the VHF band full set general structure filter is 6mm*8mm*2.3mm, its performance can be seen from Figure 6 to Figure 8, the frequency range is 30-50MHz, and the standing wave is about 18dB. Plus the insertion loss of the single-pole three-throw switch chip WKD103000060 itself is 0.9dB, which is the insertion loss of the final selected output signal.

Claims (4)

1. a high-performance filter bank with optional one output of three-pass band, is characterized in that, comprises: a single-pole three-throw switch chip receiving the input signal, A UHF band semi-lumped and semi-divided structure filter connected to the first output end of the single-pole three-throw switch chip, An S-band distributed structure filter connected to the second output end of the single-pole three-throw switch chip, A VHF band all-in-one structure filter connected to the third output end of the single-pole three-throw switch chip. 2. the high-performance filter bank of optional one output of three-pass band according to claim 1, is characterized in that, described UHF band semi-lumped and semi-divided structure filter comprises: a first input terminal (P1) connected to the first output terminal of the single-pole three-throw switch chip, a first input inductance (Lin1) connected to the first input terminal (P1), a first spiral inductor (L1) connected to the first input inductor (Lin1), a third spiral inductor (L3) connected to the first input inductor (Lin1), a first parallel capacitor (C1) connected to the output terminal of the first spiral inductor (L1), A third parallel capacitor (C3) connected to the output of the second spiral inductor (L2), a second output terminal (P2), a first output inductor (Lout1) connected to the second output terminal (P2), a second spiral inductor (L2) connected to the first output inductor (Lout1), a fourth spiral inductor (L4) connected to the first output inductor (Lout1), a second parallel capacitor (C2) connected to the output of the second spiral inductor (L2), A fourth parallel capacitor (C4) connected to the output terminal of the fourth spiral inductor (L4), A first Z-shaped capacitor (Z1) located below the spiral inductor and the shunt capacitor; The first spiral inductor (L1) and the third spiral inductor (L3) are arranged in parallel up and down; The second spiral inductor (L2) and the fourth spiral inductor (L4) are arranged in parallel up and down; The other ends of the first parallel capacitor (C1), the second parallel capacitor (C2), the third parallel capacitor (C3) and the fourth parallel capacitor (C4) are grounded. 3. the high-performance filter group that the three-pass band self-selects an output according to claim 1, it is characterized in that, described S band distributed structure filter comprises five-stage resonance, and each stage resonance has three-layer board, so The S-band distributed structure filter also includes: The third input terminal (P3) connected to the second output terminal of the single-pole three-throw switch chip, a second input inductor (Lin2) connected to the third input terminal (P3), a fourth output terminal (P4), a second output inductor (Lout2) connected to the fourth output terminal (P4), A second Z-shaped capacitor (Z2) located below the fourth-order resonance; The intermediate laminate (M1) of the first-stage resonance is connected to the second input inductance (Lin2); The middle laminate (M5) of the fifth-level resonance is connected to the second output inductor (Lout2). 4. the high-performance filter bank of optional one output of three-pass band according to claim 1, is characterized in that, described VHF wave band complete set general structure filter comprises: The fifth input terminal (P5) connected to the third output terminal of the single-pole three-throw switch chip, a first parallel resonant unit connected to the fifth input terminal (P5), a first series resonant unit connected to the fifth input terminal (P5), a second parallel resonant unit connected to the output of the first series resonant unit, a second series resonant unit connected to the output of the first series resonant unit, A first zero-point capacitor (C55) connected to the output end of the first parallel resonance unit, A second zero-point capacitance (C66) connected in parallel with the first series resonant unit, A third zero-point capacitor (C77) connected to the output end of the second parallel resonance unit, A fourth zero-point capacitor (C88) connected in parallel with the second series resonant unit; The parallel resonant unit is composed of a spiral inductor connected in parallel with a parallel capacitor; The series resonant unit is composed of a spiral inductor connected in series with a parallel capacitor.