CN104934673A - L-band minisize double microwave self-loading orthogonal power divider - Google Patents

Abstract

The invention relates to an L-band miniature double microwave self-loaded orthogonal power divider, which comprises a directional coupler with a self-connected matching load and two miniature microwave power dividers. The directional coupler includes a surface-mounted input/output port and a broadside coupled stripline with a double helix structure and a matching load self-connected at the isolated end. Two micro-wave power splitters are composed of a specific compact structure and three-dimensional integration Structural composition, the above structures are all realized by multi-layer low temperature co-fired ceramic technology. The four output signals of the present invention have the same power, no external load, can generate quadrature phase, easy to debug, light weight, small size, high reliability, good electrical performance, good temperature stability, good batch consistency of electrical performance, With the advantages of low cost and mass production, it is suitable for occasions and corresponding systems that have strict requirements on volume, electrical performance, temperature stability and reliability, such as communications in the corresponding microwave frequency band and satellite communications.

Description

A L-band Miniature Dual Microwave Self-Loaded Orthogonal Power Splitter

technical field

The invention relates to a power divider, in particular to an L-band miniature double microwave self-loaded orthogonal power divider.

Background technique

Nowadays, whether it is military radar, electronic detection, electronic countermeasures, etc., or civilian mobile phone communication, TV, remote control, it is necessary to distribute and process electronic signals, which requires the use of an important microwave passive device—power divider ( Splitters). It is a microwave network that divides one signal into two or multiple signals. If it is used in reverse, it is a power combiner that synthesizes several signals into one signal. Now power splitters have been widely used in various in electronic equipment.

With the rapid development of miniaturization of mobile communication, satellite communication and national defense electronic systems, high performance, low cost and miniaturization have become the development direction of the microwave/radio frequency field. The performance, size, reliability and cost of power dividers higher requirements have been put forward. The coupler has always been an important component in various microwave integrated circuits. Since the outputs of the straight-through port and the coupled port are different, connecting the coupler to the power splitter can expand the use range of the power splitter.

Low-temperature co-fired ceramics is an electronic packaging technology. Using multilayer ceramic technology, passive components can be built inside the dielectric substrate, and active components can also be mounted on the surface of the substrate to form passive/active integration functions. module. LTCC technology has many advantages in terms of cost, integrated packaging, wiring line width and line spacing, low impedance metallization, design diversity and flexibility, and high frequency performance, and has become the mainstream technology of passive integration. It has the advantages of high Q value, easy to embed passive devices, good heat dissipation, high reliability, high temperature resistance, shock resistance, etc., using LTCC technology, it can be well processed into small size, high precision, good compactness, low loss small microwave devices. Because LTCC technology has the advantages of three-dimensional integration, it is widely used in the microwave frequency band to manufacture various microwave passive components to achieve high integration of passive components. The stacking technology based on the LTCC process can realize three-dimensional integration, so that various micro microwave power splitters have many advantages such as small size, light weight, excellent performance, high reliability, good consistency in mass production performance, and low cost. Its three-dimensional integrated structure features can realize a miniature dual microwave self-loading orthogonal power divider, but there is no related description in the prior art.

Contents of the invention

The purpose of the present invention is to provide a directional coupler with a power divider and a self-connected matching load to achieve small size, light weight, high reliability, excellent electrical performance, convenient use, wide application range, high yield, and batch consistency Excellent, low cost, stable temperature performance L-band miniature dual microwave self-loading quadrature power divider.

The technical solution to realize the object of the present invention is: a L-band miniature dual microwave self-loaded orthogonal power splitter, including a directional coupler with a self-connected matching load and two microwave power splitters. Directional coupler with self-connected matching load includes surface mount 50 ohm impedance first input port, surface mount 50 ohm impedance through port, surface mount 50 ohm impedance coupling port, surface mount 50 ohm impedance isolation port , the first input inductance, the broadside coupled stripline of the first double helix structure, the first output inductance, the second output inductance, the broadside coupled stripline of the second double helix structure, the third output inductance, the first A absorption resistor and a ground terminal, wherein the broadside coupled stripline of the first layer of double helix structure is located directly above the broadside coupled stripline of the second layer of double helix structure, the first input inductance, the first layer of double helix structure The broadside coupled stripline and the first output inductor are in the same plane, the first input inductor is connected to the surface mount 50 ohm impedance input port, the first output inductor is connected to the surface mount 50 ohm impedance through port, the first The left end of the broadside coupled stripline of the layer double helix structure is connected to the first input inductor, and the right end of the broadside coupled stripline of the first layer double helix structure is connected to the first output inductor; the second output inductor, the second layer double helix The broadside coupled stripline of the structure and the third output inductor are in the same plane, the second output inductor is connected to the 50 ohm impedance coupling port of the surface mount, the third output inductor is connected to the 50 ohm impedance isolation port of the surface mount, and the second output inductor is connected to the surface mount 50 ohm impedance isolation port. The left end of the broadside coupled stripline of the second-layer double helix structure is connected to the second output inductor, the right end of the broadside coupled stripline of the second layer double helix structure is connected to the third output inductor, and the two ends of the first absorption resistor are respectively connected to Surface mount 50 ohm impedance isolated port and ground connection. The first microwave power divider includes a surface-mounted 50-ohm impedance second input port, a second input inductor, a first spiral inductor, a second spiral inductor, a first ground capacitor, a first parallel capacitor, a first absorption resistor, a second Four output inductors, fifth output inductor, surface mount 50 ohm impedance first output port, surface mount 50 ohm impedance second output port and ground terminal; among them, the first spiral inductor has five layers, from top to bottom The first, second, third, fourth, and fifth layers are in order, the second spiral inductor has four layers, and the first, second, third, and fourth layers are in order from top to bottom. The second input port is connected to one end of the second input inductor. The upper plate of the first ground capacitor, the fifth layer of the first spiral inductor, and the fourth layer of the second spiral inductor are all connected to the other end of the second input inductor, and the first ground capacitor is located below the first spiral inductor and the second spiral inductor, The left end of the first absorption resistor is connected to the third layer of the first spiral inductor, and the right end is connected to the second layer of the second spiral inductor. The first parallel capacitor is located directly above the first absorption resistor. The upper plate of the first parallel capacitor is connected to the first spiral The first layer of the inductor is connected, the lower plate is connected to the first layer of the second spiral inductor, the third layer of the first spiral inductor is connected to one end of the fourth output inductor, the second layer of the second spiral inductor is connected to one end of the fifth output inductor, and the second spiral inductor is connected to one end of the fifth output inductor. The other end of the four-output inductor is connected to the first output port of the surface-mounted 50-ohm impedance, and the other end of the fifth output inductor is connected to the second output port of the surface-mounted 50-ohm impedance. The second microwave power divider includes a surface-mounted 50-ohm impedance third input port, a third input inductance, a third spiral inductor, a fourth spiral inductor, a second ground capacitor, a second parallel capacitor, a second absorbing resistor, a second Six output inductors, seventh output inductor, surface mount 50 ohm impedance third output port, surface mount 50 ohm impedance fourth output port and ground terminal; among them, the third spiral inductor has five layers, from top to bottom The first, second, third, fourth, and fifth layers are in order, the fourth spiral inductor has four layers, and the first, second, third, and fourth layers are in order from top to bottom. The third input port is connected to one end of the third input inductor. The upper plate of the second ground capacitor, the fifth layer of the third spiral inductor, and the fourth layer of the fourth spiral inductor are all connected to the other end of the third input inductor, and the second ground capacitor is located below the third spiral inductor and the fourth spiral inductor. The left end of the second absorption resistor is connected to the third layer of the third spiral inductor, and the right end is connected to the second layer of the fourth spiral inductor. The second parallel capacitance is located directly above the second absorption resistor. The upper plate of the second parallel capacitor is connected to the third spiral The first layer of the inductor is connected, the lower plate is connected to the first layer of the fourth spiral inductor, the third layer of the third spiral inductor is connected to one end of the sixth output inductor, the second layer of the fourth spiral inductor is connected to one end of the seventh output inductor, and the second layer of the fourth spiral inductor is connected to one end of the seventh output inductor. The other end of the six-output inductor is connected to the third output port of the surface-mounted 50-ohm impedance, and the other end of the seventh output inductor is connected to the fourth output port of the surface-mounted 50-ohm impedance. The through port of the directional coupler is connected to the second input port of the first microwave power splitter, and the coupling port is connected to the third input port of the second microwave power splitter.

Compared with the prior art, the present invention has the following remarkable advantages: (1) Since the present invention adopts low-loss low-temperature co-fired ceramic material and three-dimensional integration, the inner band is flat; (2) It can produce the same shape and a phase difference of 90 degrees. (3) small size, light weight, high reliability; (4) excellent electrical performance; (5) simple circuit structure, which can realize mass production; (6) low cost.

Description of drawings

Fig. 1(a) is a schematic diagram of the appearance and structure of an L-band miniature dual-microwave self-loading quadrature power divider of the present invention.

Figure 1(b) is a schematic diagram of the appearance and internal structure of a self-connected matching load directional coupler in an L-band miniature dual microwave self-loading orthogonal power divider of the present invention.

Fig. 1(c) is a schematic diagram of the appearance and internal structure of the first microwave power splitter in an L-band miniature dual microwave self-loading orthogonal power splitter of the present invention.

Fig. 1(d) is a schematic diagram of the appearance and internal structure of the second microwave power splitter in an L-band miniature dual microwave self-loading orthogonal power splitter of the present invention.

Fig. 2 is an amplitude-frequency characteristic curve of the output ports (P6, P7, P9, P10) of an L-band miniature dual microwave self-loading quadrature power divider of the present invention.

Fig. 3 is a standing wave characteristic curve of the input port of an L-band miniature dual microwave self-loaded quadrature power divider of the present invention.

4 is a phase difference curve between the output port P6 and the output port P7 and a phase difference curve between the output port P9 and the output port P10 of an L-band miniature dual microwave self-loading quadrature power divider of the present invention.

Fig. 5 is a phase difference curve between the output port P6 and the output port P9 of an L-band miniature dual microwave self-loading quadrature power divider according to the present invention.

Detailed ways

In conjunction with Fig. 1 (a), Fig. 1 (b), Fig. 1 (c), Fig. 1 (d), a kind of L-band miniature double microwave self-loading quadrature power splitter of the present invention, the quadrature power splitter The directional coupler includes a surface-mounted 50-ohm impedance first input port P1, a surface-mounted 50-ohm impedance through port P2, a surface-mounted 50-ohm impedance coupling port P3, a surface-mounted 50-ohm impedance isolation port P4, The first input inductance Lin1, the broadside coupled stripline U1 of the first double helix structure, the first output inductance Lout1, the second output inductance Lout2, the broadside coupled stripline U2 of the second double helix structure, the third The output inductor Lout3, the first absorbing resistor R1 and the ground terminal, wherein the broadside coupled stripline U1 of the first double helix structure is vertically located above the broadside coupled stripline U2 of the second double helix structure, and the first input The inductance Lin1, the broadside coupled stripline U1 of the first double helix structure and the first output inductance Lout1 are on the same plane, the first input inductance Lin1 is connected to the surface-mounted 50 ohm impedance input port P1, and the first output inductance Lout1 Connect with the surface mount 50 ohm impedance straight-through port P2, the left end of the broadside coupled stripline U1 of the first double helix structure is connected with the first input inductance Lin1, the broadside coupled stripline U1 of the first double helix structure The right end is connected to the first output inductance Lout1; the second output inductance Lout2, the broadside coupled stripline U2 of the second double helix structure and the third output inductance Lout3 are in the same plane, and the second output inductance Lout2 is connected to the surface mount 50 The ohmic impedance coupling port P3 is connected, the third output inductor Lout3 is connected to the surface-mounted 50 ohm impedance isolation port P4, the left end of the broadside coupling stripline U2 of the second double-helix structure is connected to the second output inductor Lout2, and the second The right end of the broadside coupled stripline U2 of double helix structure is connected to the third output inductor Lout3, and the two ends of the first absorption resistor R1 are respectively connected to the surface-mounted 50-ohm impedance isolation port P4 and the ground terminal. The first microwave power divider D1 includes a surface-mounted 50-ohm impedance second input port P5, a second input inductor Lin2, a first spiral inductor L1, a second spiral inductor L2, a first grounding capacitor C1, and a first parallel capacitor C2 , the second absorbing resistor R2, the fourth output inductance Lout4, the fifth output inductance Lout5, the surface mount 50 ohm impedance first output port P6, the surface mount 50 ohm impedance second output port P7 and the ground terminal; wherein, The first spiral inductor L1 has five layers, which are the first, second, third, fourth, and fifth layers from top to bottom, and the second spiral inductor L2 has four layers, which are the first, second, third, and fourth layers from top to bottom. layer, the second input port P5 is connected to one end of the second input inductor Lin2, the upper plate of the first grounding capacitor C1, the fifth layer of the first spiral inductor L1, and the fourth layer of the second spiral inductor L2 are all connected to the second input inductor Lin2 Connected at one end, the first grounding capacitor C1 is located under the first spiral inductor L1 and the second spiral inductor L2, the left end of the second absorption resistor R2 is connected to the third layer of the first spiral inductor L1, and the right end is connected to the second layer of the second spiral inductor L2 connection, the first parallel capacitor C2 is located directly above the second absorption resistor R2, the upper plate of the first parallel capacitor C2 is connected to the first layer of the first spiral inductor L1, and the lower plate is connected to the first layer of the second spiral inductor L2, The third layer of the first spiral inductor L1 is connected to one end of the fourth output inductor Lout4, the second layer of the second spiral inductor L2 is connected to one end of the fifth output inductor Lout5, and the other end of the fourth output inductor Lout4 is connected to the surface-mounted 50 ohm impedance One output port P6 is connected, and the other end of the fifth output inductor Lout5 is connected to the surface mount second output port P7 with 50 ohm impedance. The second microwave power divider D2 includes a surface-mounted 50-ohm impedance third input port P8, a third input inductor Lin3, a third spiral inductor L3, a fourth spiral inductor L4, a second grounding capacitor C3, and a second parallel capacitor C4 , the third absorbing resistor R3, the sixth output inductance Lout6, the seventh output inductance Lout7, the third output port P9 of the surface-mounted 50-ohm impedance, the fourth output port P10 of the surface-mounted 50-ohm impedance and the ground terminal; wherein, The third spiral inductor L3 has five layers, which are the first, second, third, fourth, and fifth layers from top to bottom, and the fourth spiral inductor L4 has four layers, which are the first, second, third, and fourth layers from top to bottom. layer, the third input port P8 is connected to one end of the third input inductor Lin3, the upper plate of the second ground capacitor C3, the fifth layer of the third spiral inductor L3, and the fourth layer of the fourth spiral inductor L4 are connected to the third input inductor Lin3 Connected at one end, the second grounding capacitor C3 is located under the third spiral inductor L3 and the fourth spiral inductor L4, the left end of the third absorption resistor R3 is connected to the third layer of the third spiral inductor L3, and the right end is connected to the second layer of the fourth spiral inductor L4 connection, the second parallel capacitor C4 is located directly above the third absorption resistor R3, the upper plate of the second parallel capacitor C4 is connected to the first layer of the third spiral inductor L3, and the lower plate is connected to the first layer of the fourth spiral inductor L4, The third layer of the third spiral inductor L3 is connected to one end of the sixth output inductor Lout6, the second layer of the fourth spiral inductor L4 is connected to one end of the seventh output inductor Lout7, and the other end of the sixth output inductor Lout6 is connected to the surface-mounted 50 ohm impedance The third output port P9 is connected, and the other end of the seventh output inductor Lout7 is connected to the surface mount fourth output port P10 with 50 ohm impedance. The through port P2 of the directional coupler is connected to the second input port P5 of the first microwave power splitter D1, and the coupling port P3 is connected to the third input port P8 of the second microwave power splitter D2.

1 (a), (b), (c), (d), the surface mount 50 ohm impedance input port (P1, P5, P8), the surface mount 50 ohm impedance through port (P2) , surface mount 50 ohm impedance coupling port (P3), surface mount 50 ohm impedance isolation port (P4), surface mount 50 ohm impedance output port (P6, P7, P9, P10), input inductor (Lin1 , Lin2, Lin3), double-helix broadside coupled stripline (U1, U2), output inductors (Lout1, Lout2, Lout3, Lout4, Lout5, Lout6, Lout7), spiral inductors (L1, L2, L3, L4 ), grounding capacitors (C1, C3), shunt capacitors (C2, C4) and grounding terminals are realized by multi-layer low temperature co-fired ceramic technology.

The first input port P1 is connected to the broadside coupled stripline U1 of the double helix structure of the first layer through the first input inductance Lin1, and the through port P2 is coupled to the broadside of the double helix structure of the first layer through the first output inductance Lout1 The stripline U1 is connected, the coupling port P3 is connected to the broadside coupled stripline U2 of the second layer of double helix structure through the second output inductor Lout2, and the isolated port P4 is connected to the width of the second layer of double helix structure through the third output inductor Lout3. The side coupling strip line U2 is connected, the isolation port P4 is connected to the ground terminal through the first absorption resistor R1, and the second input port P5 is connected to the first ground capacitor C1, the first spiral inductor L1, and the second spiral inductor through the second input inductor Lin2 L2 connection, the first output port P6 is connected to the first spiral inductance L1 through the fourth output inductance Lout4, the second output port P7 is connected to the second spiral inductance L2 through the fifth output inductance Lout5, and the third input port P8 is connected through the third input The inductor Lin3 is connected to the second grounding capacitor C3, the third spiral inductor L3, and the fourth spiral inductor L4, the third output port P9 is connected to the third spiral inductor L3 through the sixth output inductor Lout6, and the fourth output port P10 is connected through the seventh output The inductor Lout7 is connected to the fourth spiral inductor L4.

A kind of L-band miniature dual microwave self-loading orthogonal power divider of the present invention is realized by multi-layer low-temperature co-fired ceramic technology, and its low-temperature co-fired ceramic material and metal pattern are sintered at a temperature of about 900 ° C, so It has very high reliability and temperature stability. Because the structure adopts three-dimensional integration and multi-layer folding structure, and the outer surface metal shielding realizes grounding and packaging, the volume is greatly reduced.

The size of the directional coupler in the L-band miniature dual microwave self-loading orthogonal power divider of the present invention is only 5.06mm×6.33mm×1.48mm, and the size of the power divider is only 3.2mm×1.6mm×0.9mm. Its performance can be seen from Figure 2, Figure 3, Figure 4, and Figure 5. The passband bandwidth is 1.3GHz to 1.5GHz, and the output waveforms of output port P6, output port P7, output port P9 and output port P10 are in the passband Basically the same, the return loss of the input port is better than 18dB. In the passband, the phases of the output port P6 and the output port P7 are approximately the same, the phases of the output port P9 and the output port P10 are approximately the same, and the phases of the output port P6 and the output port P9 are approximately the same. The difference is approximately 90 degrees.

Claims (3)

1. the two microwave of L-waveband miniature is from the orthogonal power splitter of load, it is characterized in that: comprise directional coupler and two microwave power distributors from connecing matched load, wherein comprise surface-pasted 50 ohmage first input end mouths (P1) from the directional coupler connecing matched load, surface-pasted 50 ohmage straight-through ports (P2), surface-pasted 50 ohmage coupling port (P3), surface-pasted 50 ohmage isolated ports (P4), first input inductance (Lin1), the double-stranded broadside coupled striplines of ground floor (U1), first outputting inductance (Lout1), second outputting inductance (Lout2), the double-stranded broadside coupled striplines of the second layer (U2), 3rd outputting inductance (Lout3), first absorption resistance (R1) and earth terminal, wherein, the double-stranded broadside coupled striplines of ground floor (U1) is vertically positioned at the double-stranded broadside coupled striplines of the second layer (U2) top, first input inductance (Lin1), the double-stranded broadside coupled striplines of ground floor (U1) and the first outputting inductance (Lout1) are at same plane, first input inductance (Lin1) is connected with surface-pasted 50 ohmage input ports (P1), first outputting inductance (Lout1) is connected with surface-pasted 50 ohmage straight-through ports (P2), the double-stranded broadside coupled striplines of ground floor (U1) left end and first inputs inductance (Lin1) and is connected, the double-stranded broadside coupled striplines of ground floor (U1) right-hand member is connected with the first outputting inductance (Lout1), second outputting inductance (Lout2), the double-stranded broadside coupled striplines of the second layer (U2) and the 3rd outputting inductance (Lout3) are at same plane, second outputting inductance (Lout2) is connected with surface-pasted 50 ohmage coupling port (P3), 3rd outputting inductance (Lout3) is connected with surface-pasted 50 ohmage isolated ports (P4), the double-stranded broadside coupled striplines of the second layer (U2) left end is connected with the second outputting inductance (Lout2), the double-stranded broadside coupled striplines of the second layer (U2) right-hand member is connected with the 3rd outputting inductance (Lout3), the two ends of the first absorption resistance (R1) are connected with surface-pasted 50 ohmage isolated ports (P4) and earth terminal respectively,

First microwave power distributor (D1) comprises surface-pasted 50 ohmage second input ports (P5), second input inductance (Lin2), first spiral inductance (L1), second spiral inductance (L2), first ground capacity (C1), first shunt capacitance (C2), second absorption resistance (R2), 4th outputting inductance (Lout4), 5th outputting inductance (Lout5), surface-pasted 50 ohmage first output ports (P6), surface-pasted 50 ohmage second output port (P7) and earth terminals, wherein, first spiral inductance (L1) is five layers, be followed successively by first from top to bottom, two, three, four, five layers, second spiral inductance (L2) is four layers, be followed successively by first from top to bottom, two, three, four layers, second input port (P5) and second inputs inductance (Lin2) one end and is connected, first ground capacity (C1) top crown, first spiral inductance (L1) layer 5, second spiral inductance (L2) the 4th layer all inputs inductance (Lin2) other end and is connected with second, first ground capacity (C1) is positioned at the below of the first spiral inductance (L1) and the second spiral inductance (L2), second absorption resistance (R2) left end is connected with the first spiral inductance (L1) third layer, right-hand member is connected with the second spiral inductance (L2) second layer, first shunt capacitance (C2) is positioned at directly over the second absorption resistance (R2), first shunt capacitance (C2) top crown is connected with the first spiral inductance (L1) ground floor, bottom crown is connected with the second spiral inductance (L2) ground floor, first spiral inductance (L1) third layer is connected with the 4th outputting inductance (Lout4) one end, second spiral inductance (L2) second layer is connected with the 5th outputting inductance (Lout5) one end, 4th outputting inductance (Lout4) other end is connected with surface-pasted 50 ohmage first output ports (P6), 5th outputting inductance (Lout5) other end is connected with surface-pasted 50 ohmage second output ports (P7),

Second microwave power distributor (D2) comprises surface-pasted 50 ohmages the 3rd input port (P8), 3rd input inductance (Lin3), triple helical inductance (L3), 4th spiral inductance (L4), second ground capacity (C3), second shunt capacitance (C4), 3rd absorption resistance (R3), 6th outputting inductance (Lout6), 7th outputting inductance (Lout7), surface-pasted 50 ohmages the 3rd output port (P9), surface-pasted 50 ohmages the 4th output port (P10) and earth terminal, wherein, triple helical inductance (L3) is five layers, be followed successively by first from top to bottom, two, three, four, five layers, 4th spiral inductance (L4) is four layers, be followed successively by first from top to bottom, two, three, four layers, 3rd input port (P8) and the 3rd inputs inductance (Lin3) one end and is connected, second ground capacity (C3) top crown, triple helical inductance (L3) layer 5, 4th spiral inductance (L4) the 4th layer all inputs inductance (Lin3) other end and is connected with the 3rd, second ground capacity (C3) is positioned at the below of triple helical inductance (L3) and the 4th spiral inductance (L4), 3rd absorption resistance (R3) left end is connected with triple helical inductance (L3) third layer, right-hand member is connected with the 4th spiral inductance (L4) second layer, second shunt capacitance (C4) is positioned at directly over the 3rd absorption resistance (R3), second shunt capacitance (C4) top crown is connected with triple helical inductance (L3) ground floor, bottom crown is connected with the 4th spiral inductance (L4) ground floor, triple helical inductance (L3) third layer is connected with the 6th outputting inductance (Lout6) one end, 4th spiral inductance (L4) second layer is connected with the 7th outputting inductance (Lout7) one end, 6th outputting inductance (Lout6) other end is connected with surface-pasted 50 ohmages the 3rd output port (P9), 7th outputting inductance (Lout7) other end is connected with surface-pasted 50 ohmages the 4th output port (P10), the straight-through port (P2) of described directional coupler is connected with second input port (P5) of the first microwave power distributor (D1), and coupling port (P3) is connected with the 3rd input port (P8) of the second microwave power distributor (D2).

2. the two microwave of a kind of L-waveband miniature according to claim 1 is from the orthogonal power splitter of load, it is characterized in that, described surface-pasted 50 ohmage input ports, surface-pasted 50 ohmage straight-through ports (P2), surface-pasted 50 ohmage coupling port (P3), surface-pasted 50 ohmage isolated ports (P4), surface-pasted 50 ohmage output ports, all input inductance, double-stranded broadside coupled striplines, all outputting inductances, all spiral inductances, all ground capacities, all shunt capacitances and earth terminal all adopt multilayer LTCC technique to realize.

3. the two microwave of a kind of L-waveband miniature according to claim 1 and 2 is from the orthogonal power splitter of load, it is characterized in that, described first input end mouth (P1) is connected with the double-stranded broadside coupled striplines of ground floor (U1) by the first input inductance (Lin1), straight-through port (P2) is connected with the double-stranded broadside coupled striplines of ground floor (U1) by the first outputting inductance (Lout1), coupling port (P3) is connected with the double-stranded broadside coupled striplines of the second layer (U2) by the second outputting inductance (Lout2), isolated port (P4) is connected with the double-stranded broadside coupled striplines of the second layer (U2) by the 3rd outputting inductance (Lout3), isolated port (P4) is connected with earth terminal by the first absorption resistance (R1), second input port (P5) is by the second input inductance (Lin2) and the first ground capacity (C1), first spiral inductance (L1), second spiral inductance (L2) connects, first output port (P6) is connected with the first spiral inductance (L1) by the 4th outputting inductance (Lout4), second output port (P7) is connected with the second spiral inductance (L2) by the 5th outputting inductance (Lout5), 3rd input port (P8) is by the 3rd input inductance (Lin3) and the second ground capacity (C3), triple helical inductance (L3), 4th spiral inductance (L4) connects, 3rd output port (P9) is connected with triple helical inductance (L3) by the 6th outputting inductance (Lout6), 4th output port (P10) is connected with the 4th spiral inductance (L4) by the 7th outputting inductance (Lout7).