CN104733814B - The miniature self-supported I/Q orthogonal filters of double microwave and millimeter waves - Google Patents

Abstract

The invention discloses a miniature double microwave millimeter wave self-load I/Q orthogonal filter, which comprises a directional coupler with a self-connected matching load and two microwave millimeter wave filters with a strip line structure. The directional coupler with self-connected matched load includes surface-mounted input/output interface, double-helix structure broadside coupled stripline and a matched load self-connected at the isolation port, two microwave and millimeter-wave filters including surface-mounted The output interface and the six-level parallel resonant unit realized by the strip line structure, the above structures are all realized by multi-layer low temperature co-fired ceramic technology. The invention has the advantages of no external load, can generate quadrature phase, easy debugging, small insertion loss, light weight, small size, high reliability, good electrical performance, good temperature stability, good batch consistency of electrical performance, and low cost. , suitable for occasions and corresponding systems that have strict requirements on volume, electrical performance, temperature stability and reliability, such as communication in the corresponding millimeter wave frequency band, satellite communication, etc.

Description

Miniature dual microwave millimeter wave self-loaded I/Q quadrature filter

technical field

The invention relates to a filter, in particular to a miniature double microwave millimeter wave self-loaded I/Q quadrature filter.

Background technique

In recent years, with the rapid development of miniaturization of mobile communication, satellite communication and national defense electronic systems, high performance, low cost and miniaturization have become the development direction of the microwave/radio frequency field. The performance, size and reliability of microwave filters Both sex and cost have put forward higher requirements. In some cutting-edge defense equipment, the current frequency bands are quite crowded, so cutting-edge equipment such as satellite communications are developing towards the millimeter-wave band, so microwave millimeter-wave band filters have become key electronic components in the receiving and transmitting branches of this band, described The main indicators of the performance of this component are: passband operating frequency range, stopband frequency range, passband insertion loss, stopband attenuation, passband input/output voltage standing wave ratio, insertion phase shift and delay frequency characteristics, temperature stability performance, size, weight, reliability, etc. The coupler has always been an important component of various microwave integrated circuits. Since the outputs of the straight-through port and the coupled port are different, connecting the coupler to the filter can expand the scope of use of the filter.

Low-temperature co-fired ceramics is an electronic packaging technology. Using multilayer ceramic technology, passive components can be built inside the dielectric substrate, and active components can also be mounted on the surface of the substrate to form passive/active integration functions. module. LTCC technology has many advantages in terms of cost, integrated packaging, wiring line width and line spacing, low impedance metallization, design diversity and flexibility, and high frequency performance, and has become the mainstream technology of passive integration. It has the advantages of high Q value, easy to embed passive devices, good heat dissipation, high reliability, high temperature resistance, shock resistance, etc., using LTCC technology, it can be well processed into small size, high precision, good compactness, low loss small microwave devices. Because LTCC technology has the advantages of three-dimensional integration, it is widely used in the microwave frequency band to manufacture various microwave passive components to achieve high integration of passive components. The stacking technology based on the LTCC process can realize three-dimensional integration, so that various micro microwave filters have many advantages such as small size, light weight, excellent performance, high reliability, good consistency in mass production performance, and low cost. The three-dimensional integrated structure features can realize a miniature dual microwave millimeter wave self-loaded I/Q quadrature filter realized by stripline.

Traditional filters, such as microstrip filters, usually achieve the same performance parameters, and the required volume is usually much larger than that realized by LTCC technology, so the disadvantages in engineering applications are highlighted. In the case of LTCC technology , will achieve optimal performance in as small a volume as possible. Moreover, traditionally used filters do not have an orthogonal function, but are realized by an external orthogonalizer.

Contents of the invention

The purpose of the present invention is to provide a strip line structure and self-connected matching load directional coupler to achieve small size, light weight, high reliability, excellent electrical performance, easy to use, wide application range, high yield, batch consistency Excellent, low cost, stable temperature performance miniature dual microwave millimeter wave self-loaded I/Q quadrature filter.

The technical solution for realizing the object of the present invention is: a miniature dual microwave millimeter wave self-loaded I/Q orthogonal filter, including a directional coupler with a self-connected matching load and two microwave millimeter wave filters. The directional coupler with self-connected matching load includes a surface-mounted 50-ohm impedance input port, the first matching line, the broadside coupled stripline of the first double-helix structure, the second matching line, the first output inductor, the second The output inductor, the third matching line, the broadside coupled stripline of the second double helix structure, the fourth matching line, the surface mount 50 ohm impedance isolation port, the tantalum resistor, wherein the width of the first double helix structure The edge-coupled stripline is vertically located above the broadside-coupled stripline of the second double helix structure, the first match line, the broadside coupled stripline of the second layer double helix structure and the second matchline are in the same plane, and the second One matching line is connected to the surface mount 50 ohm impedance input port, the second matching line is connected to the first output inductor, the left end of the broadside coupled stripline of the double helix structure of the second layer is connected to the first matching line, and the second layer The right end of the broadside coupled stripline of the double helix structure is connected to the second matching line; the third matching line, the broadside coupled stripline of the first double helix structure and the fourth matching line are in the same plane, and the third matching line is connected to the fourth matching line. The second output inductor is connected, the fourth matching line is connected to the surface-mounted 50 ohm impedance isolation port, the left end of the broadside coupled stripline of the first double helix structure is connected to the third matching line, the first layer of double helix structure The right end of the broadside coupled stripline is connected to the fourth matching line, and the two ends of the tantalum resistor are respectively connected to both ends of the surface-mounted 50-ohm impedance isolation port and the grounding end. The first microwave and millimeter wave filter includes a first input inductance, a first-level parallel resonance unit, a second-level parallel resonance unit, a third-level parallel resonance unit, a fourth-level parallel resonance unit, a fifth-level parallel resonance unit, a sixth Level parallel resonant unit, third output inductor, surface mounted 50 ohm impedance first output port, first Z-shaped inter-level coupling stripline, each level of parallel resonance unit is composed of three-layer stripline, the second layer The stripline is vertically located above the stripline of the third layer, the stripline of the first layer is vertically above the stripline of the second layer, and the first-level parallel resonant unit consists of the first stripline of the first layer, the The second stripline, the third stripline of the third layer, and the first microcapacitor are connected in parallel, and the second-level parallel resonance unit is composed of the fourth stripline of the first layer and the fifth stripline of the second layer. , the sixth stripline of the third layer, and the second microcapacitor are connected in parallel, and the third-level parallel resonant unit is composed of the seventh stripline of the first layer, the eighth stripline of the second layer, and the The ninth stripline and the third microcapacitor are connected in parallel, and the fourth parallel resonance unit is composed of the tenth stripline on the first layer, the eleventh stripline on the second layer, and the twelfth stripline on the third layer. The fifth-level parallel resonant unit consists of the thirteenth stripline on the first layer, the fourteenth stripline on the second layer, and the fifteenth stripline on the third layer , the fifth micro-capacitor connected in parallel, the sixth-level parallel resonant unit consists of the sixteenth stripline on the first layer, the seventeenth stripline on the second layer, the eighteenth stripline on the third layer, the Six microcapacitors are connected in parallel, wherein, the second stripline of the second layer of the first-level parallel resonance unit is connected to the first input inductance, and the seventeenth stripline of the second layer of the sixth-level parallel resonance unit is connected to the The third output inductance is connected, the third output inductance is connected to the first output port of the surface mounted 50 ohm impedance, and the first Z-shaped inter-stage coupling stripline is located under the parallel resonant unit. The six-level parallel resonant units are grounded respectively, in which the first and third layers have the same grounding end of all striplines, one end is a microcapacitor grounding, and the other end is open circuit, the second layer stripline grounding end is the same, one end is grounding, the other end is open circuit, and The direction of the ground terminal is opposite to that of the first and third layer ground terminals, and both ends of the first Z-shaped inter-stage coupling stripline are grounded. The second microwave and millimeter wave filter includes a second input inductance, a first-level parallel resonance unit, a second-level parallel resonance unit, a third-level parallel resonance unit, a fourth-level parallel resonance unit, a fifth-level parallel resonance unit, a sixth Level parallel resonant unit, fourth output inductor, surface mounted 50 ohm impedance second output port, second Z-shaped inter-level coupling stripline, all levels of parallel resonance units are composed of three-layer stripline, the second layer The stripline is vertically above the stripline of the third layer, the stripline of the first layer is vertically above the stripline of the second layer, and the first-level parallel resonant unit consists of the nineteenth stripline of the first layer, the The twentieth stripline of the third layer, the twenty-first stripline of the third layer, and the seventh microcapacitor are connected in parallel, and the second-level parallel resonant unit is composed of the twenty-second stripline of the first layer, the second layer The twenty-third stripline of the third layer, the twenty-fourth stripline of the third layer, and the eighth microcapacitor are connected in parallel, and the third-level parallel resonant unit is composed of the twenty-fifth stripline of the first layer, the second The twenty-sixth stripline of the first layer, the twenty-seventh stripline of the third layer, and the ninth microcapacitor are connected in parallel, and the fourth-level parallel resonant unit is composed of the twenty-eighth stripline of the first layer, the The twenty-ninth stripline on the second layer, the thirtieth stripline on the third layer, and the tenth microcapacitor are connected in parallel, and the fifth-level parallel resonant unit is composed of the thirty-first stripline on the first layer, the The thirty-second stripline on the second layer, the thirty-third stripline on the third layer, and the eleventh microcapacitor are connected in parallel, and the sixth-level parallel resonant unit is formed by the thirty-fourth stripline on the first layer , the thirty-fifth stripline of the second layer, the thirty-sixth stripline of the third layer, and the twelfth microcapacitor are connected in parallel, wherein, the twentieth of the second layer of the first-stage parallel resonant unit The stripline is connected to the second input inductance, the thirty-fifth stripline of the second layer of the sixth parallel resonant unit is connected to the fourth output inductance, and the fourth output inductance is connected to the surface mounted 50 ohm impedance second output Port connection, the second Z-shaped interstage coupling stripline is located below the parallel resonant unit. The six-level parallel resonant units are grounded respectively, in which the first and third layers have the same grounding end of all striplines, one end is a microcapacitor grounding, and the other end is open circuit, the second layer stripline grounding end is the same, one end is grounding, the other end is open circuit, and The direction of the ground terminal is opposite to that of the first and third layer ground terminals, and both ends of the second Z-shaped inter-stage coupling stripline are grounded. The first output inductance of the directional coupler of the self-connected matching load is connected with the first input inductance of the first microwave and millimeter wave filter, and the second output inductance of the directional coupler of the self-connecting matching load is connected with the second microwave and millimeter wave filter. Second input inductor connection.

Compared with the prior art, since the present invention adopts low-loss low-temperature co-fired ceramic materials and three-dimensional integration, the significant advantages brought are: (1) flat inside the band; (2) no external load; (3) can produce Two signal waveforms with the same shape and a phase difference of 90 degrees; (4) small size, light weight, and high reliability; (5) excellent electrical performance; (6) simple circuit structure and mass production; (7) low cost.

Description of drawings

Fig. 1 (a) is the appearance and internal structure schematic diagram of miniature double microwave millimeter wave self-load I/Q quadrature filter of the present invention; Fig. 1 (b) is a kind of miniature double microwave millimeter wave self-load I/Q quadrature filter of the present invention Outline and internal structure schematic diagram of the directional coupler of self-connected matching load in the quadrature filter; Fig. 1 (c) is the first microwave millimeter wave filter in a kind of miniature double microwave millimeter wave self-load I/Q quadrature filter of the present invention Figure 1 (d) is a schematic diagram of the appearance and internal structure of the second microwave millimeter wave filter in a kind of miniature dual microwave millimeter wave self-loaded I/Q quadrature filter of the present invention.

Fig. 2 is the amplitude-frequency characteristic curve of the output port (P2, P3) of the miniature dual microwave millimeter wave self-loaded I/Q quadrature filter of the present invention.

Fig. 3 is the standing wave characteristic curve of the input and output ports of the miniature dual microwave millimeter wave self-loaded I/Q quadrature filter of the present invention.

Fig. 4 is a phase difference curve between the output port (P2) and the output port (P3) of the miniature dual microwave millimeter wave self-loaded I/Q quadrature filter of the present invention.

detailed description

The present invention will be described in further detail below in conjunction with the accompanying drawings.

In conjunction with Fig. 1 (a), (b), (c), (d), a kind of miniature double microwave millimeter wave self-load I/Q quadrature filter of the present invention, the orientation of the self-connection matching load of this quadrature filter The coupler includes a surface-mounted 50-ohm impedance input port (P1), a first matching line (L1), a broadside coupled stripline (U1) of a double-helix structure in the first layer, a second matching line (L2), and a second matching line (L2). One output inductor (Lout1), the second output inductor (Lout2), the third matching line (L3), the broadside coupled stripline (U2) of the second double helix structure, the fourth matching line (L4), surface mount Installed 50 ohm impedance isolation port (P4), tantalum resistor (R), wherein the broadside coupled stripline (U1) of the first double helix structure is vertically located on the broadside coupled stripline of the second double helix structure Above (U2), the first match line (L1), the broadside coupled stripline (U2) of the second double helix structure and the second match line (L2) are in the same plane, and the first match line (L1) and the surface The mounted 50-ohm impedance input port (P1) is connected, the second matching line (L2) is connected to the first output inductor (Lout1), and the left end of the broadside coupled stripline (U2) of the second double-helix structure is connected to the first The matching line (L1) is connected, and the right end of the broadside coupled stripline (U2) of the second layer of double helix structure is connected to the second matching line (L2); the third matching line (L3), the width of the first layer of double helix structure The side-coupled stripline (U1) and the fourth matching line (L4) are in the same plane, the third matching line (L3) is connected to the second output inductor (Lout2), and the fourth matching line (L4) is connected to the surface mount 50 The ohmic impedance isolation port (P4) is connected, the left end of the broadside coupled stripline (U1) of the first layer of double helix structure is connected with the third matching line (L3), the broadside coupled stripline of the first layer of double helix structure ( The right end of U1) is connected to the fourth matching line (L4), and the two ends of the tantalum resistor (R) are respectively connected to the two ends of the surface-mounted 50-ohm impedance isolation port (P4) and the grounding end. The first microwave and millimeter wave filter (F1) includes a first input inductance (Lin1), a first-stage parallel resonant unit (L11, L21, L31, C1), a second-stage parallel resonant unit (L12, L22, L32, C2) , the third parallel resonant unit (L13, L23, L33, C3), the fourth parallel resonant unit (L14, L24, L34, C4), the fifth parallel resonant unit (L15, L25, L35, C5), the fourth Six-stage parallel resonant unit (L16, L26, L36, C6), third output inductor (Lout3), surface-mounted 50-ohm impedance first output port (P2), first Z-shaped interstage coupling stripline (Z1 ), the parallel resonant units at all levels are composed of three layers of striplines, the second layer of striplines is vertically above the third layer of striplines, the first layer of striplines is vertically above the second layer of striplines, the first The stage parallel resonant unit (L11, L21, L31, C1) consists of the first stripline (L11) of the first layer, the second stripline (L21) of the second layer, the third stripline of the third layer ( L31), the first microcapacitor (C1) is connected in parallel, and the second-stage parallel resonant unit (L12, L22, L32, C2) is formed by the fourth stripline (L12) of the first layer, the fifth stripline of the second layer stripline (L22), the sixth stripline (L32) of the third layer, and the second microcapacitor (C2) are connected in parallel, and the third-stage parallel resonant unit (L13, L23, L33, C3) is composed of the first layer The seventh stripline (L13), the eighth stripline (L23) of the second layer, the ninth stripline (L33) of the third layer, and the third microcapacitor (C3) are connected in parallel, and the fourth stage is connected in parallel The resonance unit (L14, L24, L34, C4) consists of the tenth stripline (L14) of the first layer, the eleventh stripline (L24) of the second layer, and the twelfth stripline ( L34) and the fourth microcapacitor (C4) are connected in parallel, and the fifth parallel resonant unit (L15, L25, L35, C5) is composed of the thirteenth strip line (L15) of the first layer and the tenth of the second layer Four striplines (L25), the fifteenth stripline (L35) of the third layer, and the fifth microcapacitor (C5) are connected in parallel, and the sixth parallel resonant unit (L16, L26, L36, C6) is composed of the first The sixteenth stripline (L16) of the first layer, the seventeenth stripline (L26) of the second layer, the eighteenth stripline (L36) of the third layer, and the sixth microcapacitor (C6) are connected in parallel and In which, the second stripline (L21) of the second layer of the first-stage parallel resonant unit (L11, L21, L31, C1) is connected to the first input inductance (Lin1), and the sixth-stage parallel resonant unit (L16 , L26, L36, C6) the seventeenth stripline (L26) of the second layer is connected to the third output inductance (Lout3), and the third output inductance (Lout3) is connected to the surface-mounted 50 ohm impedance first output port (P2) connection, the first Z-shaped interstage coupling stripline (Z1) is located below the parallel resonant unit. The six-level parallel resonant units are grounded respectively, in which the first and third layers have the same grounding end of all striplines, one end is a microcapacitor grounding, and the other end is open circuit, the second layer stripline grounding end is the same, one end is grounding, the other end is open circuit, and The direction of the ground terminal is opposite to that of the first and third layer ground terminals, and both ends of the first Z-shaped inter-stage coupling stripline (Z1) are grounded. The second microwave and millimeter wave filter (F2) includes a second input inductance (Lin2), a first-stage parallel resonant unit (L41, L51, L61, C7), a second-stage parallel resonant unit (L42, L52, L62, C8) , the third parallel resonant unit (L43, L53, L63, C9), the fourth parallel resonant unit (L44, L54, L64, C10), the fifth parallel resonant unit (L45, L55, L65, C11), the fourth Six-level parallel resonant unit (L46, L56, L66, C12), fourth output inductor (Lout4), surface-mounted 50-ohm impedance second output port (P3), second Z-shaped interstage coupling stripline (Z2 ), the parallel resonant units at all levels are composed of three layers of striplines, the second layer of striplines is vertically above the third layer of striplines, the first layer of striplines is vertically above the second layer of striplines, the first The level parallel resonant unit (L41, L51, L61, C7) consists of the nineteenth stripline (L41) of the first layer, the twentieth stripline (L51) of the second layer, the twenty-first stripline of the third layer The stripline (L61) and the seventh microcapacitor (C7) are connected in parallel, and the second-stage parallel resonant unit (L42, L52, L62, C8) is composed of the twenty-second stripline (L42) of the first layer, the second The twenty-third stripline (L52) on the second layer, the twenty-fourth stripline (L62) on the third layer, and the eighth microcapacitor (C8) are connected in parallel, and the third-level parallel resonance unit (L43, L53 , L63, C9) consists of the twenty-fifth stripline (L43) of the first layer, the twenty-sixth stripline (L53) of the second layer, and the twenty-seventh stripline (L63) of the third layer , the ninth micro-capacitor (C9) is connected in parallel, and the fourth-level parallel resonant unit (L44, L54, L64, C10) is composed of the twenty-eighth stripline (L44) of the first layer, the twenty-eighth strip line of the second layer Nine striplines (L54), the thirtieth stripline (L64) of the third layer, and the tenth microcapacitor (C10) are connected in parallel, and the fifth-level parallel resonant unit (L45, L55, L65, C11) is composed of the first The thirty-first stripline (L45) of the first layer, the thirty-second stripline (L55) of the second layer, the thirty-third stripline (L65) of the third layer, the eleventh micro capacitor ( C11) connected in parallel, the sixth parallel resonant unit (L46, L56, L66, C12) consists of the thirty-fourth stripline (L46) of the first layer, the thirty-fifth stripline (L56) of the second layer ), the thirty-sixth stripline (L66) of the third layer, and the twelfth microcapacitor (C12) are connected in parallel, wherein, the second layer of the first-level parallel resonant unit (L41, L51, L61, C7) The twentieth stripline (L51) is connected to the second input inductance (Lin2), and the thirty-fifth stripline (L56) of the second layer of the sixth parallel resonant unit (L46, L56, L66, C12) Connect with the fourth output inductor (Lout4), the fourth output inductor (Lout4) and the surface mount 50 ohm impedance second output port (P 3) Connection, the second Z-shaped inter-stage coupling stripline (Z2) is located below the parallel resonant unit. The six-level parallel resonant units are grounded respectively, in which the first and third layers have the same grounding end of all striplines, one end is a microcapacitor grounding, and the other end is open circuit, the second layer stripline grounding end is the same, one end is grounding, the other end is open circuit, and The direction of the ground terminal is opposite to that of the first and third layer ground terminals, and both ends of the second Z-shaped inter-stage coupling stripline (Z2) are grounded. The first output inductance (Lout1) of the directional coupler connected to the matched load is connected to the first input inductance (Lin1) of the first microwave and millimeter wave filter (F1), and the second output inductance of the directional coupler connected to the matched load is self-connected (Lout2) is connected to the second input inductance (Lin2) of the second microwave millimeter wave filter (F2).

Combined with Figure 1 (a), (b), (c), (d), including the surface mount 50 ohm impedance input port (P1), the first matching line (L1), the broadside of the first double helix structure Coupling stripline (U1), second match line (L2), first output inductance (Lout1), second output inductance (Lout2), third match line (L3), broadside coupling of the second double helix structure Stripline (U2), fourth matching line (L4), surface mount 50 ohm impedance isolation port (P4), tantalum resistors (R), input inductors (Lin1, Lin2), first stage parallel resonant unit (L11 , L21, L31, C1, L41, L51, L61, C7), the second parallel resonance unit (L12, L22, L32, C2, L42, L52, L62, C8), the third parallel resonance unit (L13, L23 , L33, C3, L43, L53, L63, C9), the fourth parallel resonance unit (L14, L24, L34, C4, L44, L54, L64, C10), the fifth parallel resonance unit (L15, L25, L35 , C5, L45, L55, L65, C11), sixth parallel resonant unit (L16, L26, L36, C6, L46, L56, L66, C12), output inductor (Lout3, Lout4), surface mount 50 ohm Impedance output ports (P2, P3), Z-shaped interstage coupling striplines (Z1, Z2) and ground terminals are all realized by multi-layer low temperature co-fired ceramic technology.

A miniature dual-microwave millimeter-wave self-loaded I/Q quadrature filter is realized by multi-layer low-temperature co-fired ceramic technology, and its low-temperature co-fired ceramic material and metal pattern are sintered at a temperature of about 900 ° C, so it has Very high reliability and temperature stability, because the structure adopts three-dimensional three-dimensional integration and multi-layer folding structure, and the outer surface metal shielding realizes grounding and packaging, so that the volume is greatly reduced.

The size of the miniature dual microwave millimeter wave self-loaded I/Q quadrature filter of the present invention is only 11mm × 3.2mm × 1.5mm, and its performance can be seen from Fig. 2 and Fig. 3, the passband bandwidth is 2.7GHz～2.9GHz, The output waveforms of the output port (P2) and the output port (P3) in the passband are basically the same, the return loss of the input port is better than 19dB, and the phase difference between the output port (P2) and the output port (P3) is similar in the passband is 90 degrees.

Claims (3)

1. A kind of 1. miniature double self-supported I/Q orthogonal filters of microwave and millimeter wave, it is characterised in that：Including connecing determining for matched load certainly To coupler and two microwave and millimeter wave wave filters；Include surface-pasted 50 ohm resistances from the directional coupler for connecing matched load Anti- input port（P1）, the first matched line（L1）, the double-stranded broadside coupled striplines of first layer（U1）, the second matched line （L2）, the first outputting inductance（Lout1）, the second outputting inductance（Lout2）, the 3rd matched line（L3）, second layer double-spiral structure Broadside coupled striplines（U2）, the 4th matched line（L4）, surface-pasted 50 ohmage isolated port（P4）, tantalum resistance （R）, wherein, the double-stranded broadside coupled striplines of first layer（U1）It is vertically positioned at the double-stranded broadside coupling of the second layer Close strip line（U2）Top, the first matched line（L1）, the double-stranded broadside coupled striplines of the second layer（U2）With second Distribution（L2）In same plane, the first matched line（L1）With surface-pasted 50 ohmage input port（P1）Connection, second Matched line（L2）With the first outputting inductance（Lout1）Connection, the double-stranded broadside coupled striplines of the second layer（U2）Left end With the first matched line（L1）Connection, the double-stranded broadside coupled striplines of the second layer（U2）Right-hand member and the second matched line（L2） Connection；3rd matched line（L3）, the double-stranded broadside coupled striplines of first layer（U1）With the 4th matched line（L4）Same One plane, the 3rd matched line（L3）With the second outputting inductance（Lout2）Connection, the 4th matched line（L4）With surface-pasted 50 Europe Nurse impedance isolated port（P4）Connection, the double-stranded broadside coupled striplines of first layer（U1）Left end and the 3rd matched line （L3）Connection, the double-stranded broadside coupled striplines of first layer（U1）Right-hand member and the 4th matched line（L4）Connection, tantalum resistance （R）Both ends respectively with surface-pasted 50 ohmage isolated port（P4）Connected with earth terminal；First microwave and millimeter wave is filtered Ripple device（F1）Including the first input inductance（Lin1）, first order parallel resonance unit（L11、L21、L31、C1）, the second level it is in parallel Resonant element（L12、L22、L32、C2）, third level parallel resonance unit（L13、L23、L33、C3）, fourth stage parallel resonance list Member（L14、L24、L34、C4）, level V parallel resonance unit（L15、L25、L35、C5）, the 6th grade of parallel resonance unit（L16、 L26、L36、C6）, the 3rd outputting inductance（Lout3）, the surface-pasted output port of 50 ohmage first（P2）, it is first Z-shaped Interstage coupling strip line（Z1）, parallel resonance units at different levels form by triple layer shape line, and second layer strip line is vertically positioned at the Above triple layer shape line, first layer strip line is vertically positioned above second layer strip line, first order parallel resonance unit（L11、 L21、L31、C1）By the first strip line of first layer（L11）, the second layer the second strip line（L21）, third layer the 3rd banding Line（L31）, first micro- electric capacity（C1）It is formed in parallel, second level parallel resonance unit（L12、L22、L32、C2）By the of first layer Four strip lines（L12）, the second layer the 5th strip line（L22）, third layer the 6th strip line（L32）, second micro- electric capacity（C2） It is formed in parallel, third level parallel resonance unit（L13、L23、L33、C3）By the 7th strip line of first layer（L13）, the second layer 8th strip line（L23）, third layer the 9th strip line（L33）, the 3rd micro- electric capacity（C3）It is formed in parallel, fourth stage parallel resonance Unit（L14、L24、L34、C4）By the tenth strip line of first layer（L14）, the second layer the 11st strip line（L24）, the 3rd 12nd strip line of layer（L34）, the 4th micro- electric capacity（C4）It is formed in parallel, level V parallel resonance unit（L15、L25、L35、 C5）By the 13rd strip line of first layer（L15）, the second layer the 14th strip line（L25）, third layer the 15th strip line （L35）, the 5th micro- electric capacity（C5）It is formed in parallel, the 6th grade of parallel resonance unit（L16、L26、L36、C6）By the tenth of first layer the Six strip lines（L16）, the second layer the 17th strip line（L26）, third layer the 18th strip line（L36）, the 6th micro- electric capacity （C6）It is formed in parallel, wherein, first order parallel resonance unit（L11、L21、L31、C1）The second layer the second strip line（L21） With the first input inductance（Lin1）Connection, the 6th grade of parallel resonance unit（L16、L26、L36、C6）The second layer the 17th band Shape line（L26）With the 3rd outputting inductance（Lout3）Connection, the 3rd outputting inductance（Lout3）With surface-pasted 50 ohmage First output port（P2）Connection, the first Z-shaped interstage coupling strip line（Z1）Below parallel resonance unit；

   Six grades of parallel resonance units are grounded respectively, wherein first and third layer of all strip line earth terminal is identical, one end is that micro- electric capacity connects Ground, the other end open circuit, second layer strip line earth terminal is identical, one end ground connection, the other end open circuit, and be grounded extreme direction and first, Three layers of earth terminal are on the contrary, the first Z-shaped interstage coupling strip line（Z1）Both ends are grounded；Second microwave and millimeter wave wave filter（F2）Bag Include the second input inductance（Lin2）, first order parallel resonance unit（L41、L51、L61、C7）, second level parallel resonance unit （L42、L52、L62、C8）, third level parallel resonance unit（L43、L53、L63、C9）, fourth stage parallel resonance unit（L44、 L54、L64、C10）, level V parallel resonance unit（L45、L55、L65、C11）, the 6th grade of parallel resonance unit（L46、L56、 L66、C12）, the 4th outputting inductance（Lout4）, the surface-pasted output port of 50 ohmage second（P3）, between the second Z-shaped level Coupling strip line（Z2）, parallel resonance units at different levels form by triple layer shape line, and second layer strip line is vertically positioned at third layer Above strip line, first layer strip line is vertically positioned above second layer strip line, first order parallel resonance unit（L41、L51、 L61、C7）By the 19th strip line of first layer（L41）, the second layer the 20th strip line（L51）, third layer the 21st Strip line（L61）, the 7th micro- electric capacity（C7）It is formed in parallel, second level parallel resonance unit（L42、L52、L62、C8）By first layer The 22nd strip line（L42）, the second layer the 23rd strip line（L52）, third layer the 24th strip line （L62）, the 8th micro- electric capacity（C8）It is formed in parallel, third level parallel resonance unit（L43、L53、L63、C9）By the second of first layer 15 strip lines（L43）, the second layer the 26th strip line（L53）, third layer the 27th strip line（L63）, the 9th Micro- electric capacity（C9）It is formed in parallel, fourth stage parallel resonance unit（L44、L54、L64、C10）By the 28th banding of first layer Line（L44）, the second layer the 29th strip line（L54）, third layer the 30th strip line（L64）, the tenth micro- electric capacity（C10） It is formed in parallel, level V parallel resonance unit（L45、L55、L65、C11）By the 31st strip line of first layer（L45）, Two layers of the 32nd strip line（L55）, third layer the 33rd strip line（L65）, the 11st micro- electric capacity（C11）It is in parallel and Into the 6th grade of parallel resonance unit（L46、L56、L66、C12）By the 34th strip line of first layer（L46）, the second layer 35th strip line（L56）, third layer the 36th strip line（L66）, the 12nd micro- electric capacity（C12）It is formed in parallel, its In, first order parallel resonance unit（L41、L51、L61、C7）The second layer the 20th strip line（L51）With the second input electricity Sense（Lin2）Connection, the 6th grade of parallel resonance unit（L46、L56、L66、C12）The second layer the 35th strip line（L56） With the 4th outputting inductance（Lout4）Connection, the 4th outputting inductance（Lout4）With the surface-pasted output end of 50 ohmage second Mouthful（P3）Connection, the second Z-shaped interstage coupling strip line（Z2）Below parallel resonance unit；

   Six grades of parallel resonance units are grounded respectively, wherein first and third layer of all strip line earth terminal is identical, one end is that micro- electric capacity connects Ground, the other end open circuit, second layer strip line earth terminal is identical, one end ground connection, the other end open circuit, and be grounded extreme direction and first, Three layers of earth terminal are on the contrary, the second Z-shaped interstage coupling strip line（Z2）Both ends are grounded；From the directional coupler for connecing matched load First outputting inductance（Lout1）With the first microwave and millimeter wave wave filter（F1）First input inductance（Lin1）Connection, connects certainly Second outputting inductance of the directional coupler with load（Lout2）With the second microwave and millimeter wave wave filter（F2）Second input electricity Sense（Lin2）Connection.
2. 2. miniature double self-supported I/Q orthogonal filters of microwave and millimeter wave according to claim 1, it is characterised in that：Surface 50 ohmage input ports of attachment（P1）, the first matched line（L1）, the double-stranded broadside coupled striplines of first layer （U1）, the second matched line（L2）, the first outputting inductance（Lout1）, the second outputting inductance（Lout2）, the 3rd matched line（L3）, Two layers of double-stranded broadside coupled striplines（U2）, the 4th matched line（L4）, surface-pasted 50 ohmage isolation end Mouthful（P4）, tantalum resistance（R）, input inductance（Lin1、Lin2）, first order parallel resonance unit（L11、L21、L31、C1、L41、 L51、L61、C7）, second level parallel resonance unit（L12、L22、L32、C2、L42、L52、L62、C8）, third level parallel resonance Unit（L13、L23、L33、C3、L43、L53、L63、C9）, fourth stage parallel resonance unit（L14、L24、L34、C4、L44、 L54、L64、C10）, level V parallel resonance unit（L15、L25、L35、C5、L45、L55、L65、C11）, the 6th grade of parallel connection it is humorous Shake unit（L16、L26、L36、C6、L46、L56、L66、C12）, outputting inductance（Lout3、Lout4）, it is surface-pasted 50 ohm Impedance output mouth（P2、P3）, Z-shaped interstage coupling strip line（Z1、Z2）Multilayer LTCC work is used with earth terminal Skill is realized.
3. 3. miniature double self-supported I/Q orthogonal filters of microwave and millimeter wave according to claim 1 or 2, it is characterised in that：It is defeated Inbound port（P1）Pass through the first matched line（L1）With the double-stranded broadside coupled striplines of the second layer（U2）Connection, isolation end Mouthful（P4）Pass through the 4th matched line（L4）With the double-stranded broadside coupled striplines of first layer（U1）Connection, isolated port （P4）Pass through tantalum resistance（R）It is attached with earth terminal, the first output port（P2）Pass through the 3rd outputting inductance（Lout3）With One microwave and millimeter wave wave filter（F1）The 6th grade of parallel resonance unit（L16、L26、L36、C6）The second layer the 17th band Shape line（L26）Connection, the second output port（P3）Pass through the 4th outputting inductance（Lout4）With the second microwave and millimeter wave wave filter （F2）The 6th grade of parallel resonance unit（L46、L56、L66、C12）The second layer the 35th strip line（L56）Connection.