CN104934450B - Imaging sensor and preparation method thereof - Google Patents
Imaging sensor and preparation method thereof Download PDFInfo
- Publication number
- CN104934450B CN104934450B CN201410101127.2A CN201410101127A CN104934450B CN 104934450 B CN104934450 B CN 104934450B CN 201410101127 A CN201410101127 A CN 201410101127A CN 104934450 B CN104934450 B CN 104934450B
- Authority
- CN
- China
- Prior art keywords
- doped region
- substrate
- comb teeth
- shaped structure
- imaging sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
This application provides a kind of imaging sensors and preparation method thereof.Imaging sensor includes substrate, substrate includes multiple active areas and the isolation structure for multiple active areas to be isolated, each active area includes photoelectric area sensor and transmission control zone, each photoelectric area sensor includes the first doped region and the second doped region for being used to form optoelectronic induction structure, wherein, the doping type of first doped region and the second doped region is on the contrary, the first doped region and/or the second doped region have comb teeth-shaped structure.The application sets the first doped region and/or the second doped region to comb teeth-shaped structure, thus, in limited sizes/areas, increase the capacitance of photodiode.Since the capacitance of photodiode increases, therefore, it is possible to receive stronger light without there is a phenomenon where being saturated, thus, imaging sensor using the above structure, the range of light intensity bigger that the imaging sensor of the range of light intensity that can be received than in the prior art can receive.
Description
Technical field
This application involves image acquiring device fields, more particularly, to a kind of imaging sensor and preparation method thereof.
Background technology
Complementary metal oxide（CMOS）Imaging sensor（image sensor）Chip is that one kind converts optical signals to
The semiconductor devices of electric signal, in recent years, due to being integrated in circuit, the plurality of advantages in terms of energy expenditure and manufacturing cost,
Cmos image sensor is developed rapidly.
Cmos image sensor includes a series of pixel unit（pixel cells）And peripheral circuit（periphery
circuit）, each pixel unit includes a light emitting diode and at least one MOS transistor, to by being in the mould that opens the light
MOS transistor in formula detects the electric signal of each unit pixel, and the light emitting diode is for absorbing incident laser energy simultaneously
And convert light energy to photoelectric current.
Fig. 1 shows a kind of structural schematic diagram of imaging sensor in the prior art.As shown in Figure 1, in the prior art
The imaging sensor include：Substrate 1, wherein substrate 1 includes multiple active areas and the isolation junction for multiple active areas to be isolated
Structure 2.Each active area includes photoelectric area sensor and transmission control zone, each photoelectric area sensor include first doped region 5 with
And second doped region 6, wherein first doped region 5 and the second doped region 6 form optoelectronic induction structure, wherein first mixes
Miscellaneous area is opposite with the doping type of the second doped region.
Wherein, which can be fleet plough groove isolation structure, be formed between two adjacent isolation structures 2
State active area.Particularly, the first doped region 5 of each active area adulterates for p-type, and the second doped region 6 is n-type doping, substrate 1
It is adulterated for p-type.It is the gate structure 4 being formed on substrate 1 to transmit control zone, it is preferable that the material of grid for example can be more
Crystal silicon, the material of gate oxide is such as can be silica.
For example, ion implantation can be used in the first doped region and the second doped region, for example, carrying out in the first doped region
One ion implanting is noted with forming the first doped region of certain depth and doping concentration in substrate in the first ion implantation technology
The ionic type entered is identical as the Doped ions type of substrate, for example, substrate is n-type doping, then the doping class of the first doped region
Type is n-type doping.Profit in the same way, can form the second doped region.Wherein, one is formed between the second doped region and substrate
A PN junction also forms a PN junction between the first doped region and the second doped region, to form photodiode, be used for incidence
Converting photons are electronics.
In this way, for the same active area, the number of the first doped region in the prior art and the second doped region is equal
It it is one, i.e., the two is arranged correspondingly.Therefore, optoelectronic induction structure（That is photodiode）Capacitance it is smaller, when
When larger by the luminous intensity in the external world, it is easy to cause photodiode there is a phenomenon where being saturated, thus, figure in the prior art
As the range of light intensity that sensor can receive is limited.
In addition, since the sizes/areas of each pixel of imaging sensor is limited, in the prior art
The capacitance for the photodiode that the mode of stating obtains can not possibly do more, therefore, it is difficult to improve the range of light intensity that can be received.
Invention content
The application is intended to provide a kind of imaging sensor and preparation method thereof, to solve imaging sensor institute in the prior art
The small problem of range of light intensity that can be received.
In order to solve the above technical problems, according to the first aspect of the application, a kind of imaging sensor, including lining are provided
Bottom, substrate include multiple active areas and the isolation structure for multiple active areas to be isolated, and each active area includes photoelectric area sensor
With transmission control zone, each photoelectric area sensor includes the first doped region and the second doping for being used to form optoelectronic induction structure
Area, wherein the doping type of the first doped region and the second doped region is on the contrary, the first doped region and/or the second doped region have comb
Dentalation.
Preferably, comb teeth-shaped structure includes 2 to 4 broach.
Preferably, the number of broach is 2.
Preferably, isolation structure is fleet plough groove isolation structure.
Preferably, substrate adulterates for p-type, and the first doped region adulterates for p-type, and the second doped region is n-type doping.
Preferably, the mode that substrate is generated by extension is made.
Preferably, transmission control zone is gate structure.
Preferably, the direction of comb teeth-shaped structure towards the second doped region of the first doped region extends and is inserted into the second doping
Area.
Preferably, the comb teeth-shaped structure of the second doped region is directed away from the direction setting of the first doped region.
Preferably, the direction of comb teeth-shaped structure towards the second doped region of the first doped region extends and is inserted into the second doping
Area, and the comb teeth-shaped structure of the second doped region is directed away from the direction setting of the first doped region.
According to the second aspect of the application, a kind of production method of imaging sensor is provided, including：Shape on substrate
At for isolation structure, to form multiple active areas, active area includes photoelectric area sensor and transmission control zone；In transmission control zone
Interior formation gate structure；The first doped region and the second doped region with substrate doping are formed in photoelectric area sensor, wherein first
Doped region and/or the second doped region have comb teeth-shaped structure, and optoelectronic induction knot is collectively formed in the first doped region and the second doped region
Structure, wherein the first doped region is opposite with the doping type of the second doped region.
Preferably, production method further includes forming side wall on the side wall of gate structure.
Preferably, comb teeth-shaped structure includes 2 to 4 broach.
Preferably, the number of broach is 2.
Preferably, the mode that substrate is generated by extension is made.
Preferably, substrate adulterates for p-type, and the first doped region adulterates for p-type, and the second doped region is n-type doping.
Preferably, the Doped ions of the first doped region are fluorination boron ion.
Preferably, the Doped ions of the second doped region are phosphonium ion.
Preferably, the doping process for being fluorinated boron ion is：Ion implantation energy is 10 to 60Kev, and ion implantation dosage is
2E12 to 2E13atoms/cm2。
Preferably, the doping process of phosphonium ion is：Ion implantation energy is 150 to 200Kev, and ion implantation dosage is
3E12 to 3E13atoms/cm2。
The application sets the first doped region and/or the second doped region to comb teeth-shaped structure, thus, limited size/
In area, the capacitance of photodiode is increased.Since the capacitance of photodiode increases, therefore, it is possible to receive stronger light
Line without there is a phenomenon where being saturated, thus, imaging sensor using the above structure, the range of light intensity that can be received is than existing
There is the range of light intensity bigger that the imaging sensor in technology can receive.
Description of the drawings
The attached drawing constituted part of this application is used for providing further understanding of the present application, the schematic reality of the application
Example and its explanation are applied for explaining the application, does not constitute the improper restriction to the application.In the accompanying drawings：
Fig. 1 diagrammatically illustrates the partial structural diagram of imaging sensor in the prior art；
Fig. 2 diagrammatically illustrates the partial structural diagram of the imaging sensor in the application first embodiment；
Fig. 3 diagrammatically illustrates the partial structural diagram of the imaging sensor in the application second embodiment；
Fig. 4 diagrammatically illustrates the partial structural diagram of the imaging sensor in the application second embodiment；
Fig. 5 diagrammatically illustrates the process flow chart of the imaging sensor in the application.
Reference numeral in figure：1, substrate；2, isolation structure；3, marker space；4, gate structure；5, the first doped region；6,
Two doped regions.
Specific implementation mode
Embodiments herein is described in detail below, but what the application can be defined by the claims and cover
Multitude of different ways is implemented.
It should be noted that term used herein above is merely to describe specific implementation mode, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Be also intended to include plural form, additionally, it should be understood that, when in the present specification using belong to "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or combination thereof.For ease of description, herein may be used
To use spatially relative term, such as " ... on ", " ... top ", " ... upper surface ", " above ", it is used for
Description such as a device or feature shown in the figure and other devices or the spatial relation of feature.It should be understood that
Spatially relative term is intended to comprising the different direction in use or operation other than orientation of the device described in figure.
For example, if the device in attached drawing is squeezed, it is described as " above other devices or construction " or " in other devices or construction
On " device after will be positioned as " other devices or construction below " or " other devices or construction under ".Thus,
Exemplary term may include " in ... top " and " in ... lower section " two kinds of orientation " in ... top ".The device can also
Other different modes position（It is rotated by 90 ° or is in other orientation）, and phase is made to the opposite description in space used herein above
It should explain.
The technical issues of in order to solve the prior art as described above, please refers to Fig.2 to Fig. 4, and first as the application
Aspect, provides a kind of imaging sensor, such as CIS sensors, including substrate 1, substrate 1 include multiple active areas and for every
Isolation structure 2 from multiple active areas, each active area include photoelectric area sensor and transmission control zone.Wherein, each light inductance
It includes the first doped region 5 and the second doped region 6 for being used to form optoelectronic induction structure to answer area, wherein the first doped region 5 and
The doping type of two doped regions 6 is on the contrary, the first doped region 5 and/or the second doped region 6）There is comb teeth-shaped structure.
Please refer to Fig.2 to Fig. 4, the first doped region 5 and the second doped region 6 are formed on substrate 1, for example, can by from
The mode of son injection forms the two doped regions, and other modes can also be used certainly and generate doped region, and the second doped region 6 and the
One doped region 5 constitutes photodiode, i.e. optoelectronic induction structure.
In Fig. 2 to Fig. 4, a PN junction is formed between substrate 1 and the second doped region 6, and the first doped region 5 is mixed with second
Another PN junction is formed between miscellaneous area 6.The two PN junctions can be used as photodiode, for being by incident converting photons
Electronics.Transmission control structure is used to control the output situation for the electric current that the two PN junctions are generated, that is to say, that by transmission
The control of control structure, can control whether the electric current is output to the outside.
Since the first doped region 5 and/or the second doped region 6 have comb teeth-shaped structure as shown in Figures 2 to 4, thus, it can
In limited sizes/areas, increase the capacitance of photodiode.Since the capacitance of photodiode increases, therefore, it is possible to connect
Stronger light is received without there is a phenomenon where being saturated, thus, imaging sensor using the above structure, the light that can be received
The range of light intensity bigger that the imaging sensor of strong range than in the prior art can receive.
Preferably, it please refers to Fig.2 and Fig. 3, comb teeth-shaped structure includes 2 to 4 broach.Preferably, the number of broach is 2
It is a.Preferably, the root of multiple broach is connected with each other, and marker space 3 is formed between two neighboring broach.For example, shown in Fig. 2
In embodiment, comb structure only is formed on the second doped region, at this point, the top of the second doped region 6 is to be connected with each other, to
Pectinate texture is formd, the comb-tooth-type just because of the pectinate texture designs so that the capacitance of the photodiode in the application
Increased.In the embodiment shown in fig. 3, comb structure, the comb teeth-shaped of the first doped region 5 are only formed on the first doped region
The direction of structure towards the second doped region 6 extends and is inserted into the second doped region 6, and the comb-tooth-type just because of the pectinate texture is set
Meter so that the capacitance of the photodiode in the application is increased.In the embodiment shown in fig. 4, the comb of the first doped region 5
The direction of dentalation towards the second doped region 6 extends and is inserted into the second doped region 6, and the comb teeth-shaped structure of the second doped region 6
It is directed away from the direction setting of the first doped region 5, the comb-tooth-type just because of the pectinate texture designs so that the light in the application
The capacitance of electric diode is increased.
Preferably, isolation structure 2 is fleet plough groove isolation structure.Fleet plough groove isolation structure as a kind of device separation,
It is especially suitable for 0.18 micron of elements below, such as the lateral isolation between the active area of CMOS integrated circuits.Particularly,
The application forms fleet plough groove isolation structure using following technique：In the substrate for being sequentially formed with cushion oxide layer and etching stop layer
The interior shallow trench formed through cushion oxide layer and etching stop layer.Specifically, the formation process of shallow trench can be etching
Technique inserts hostage in shallow trench, and forms dielectric layer in etching stopping layer surface, for example, dielectric material can be oxygen
SiClx；It anneals to medium, then handles the dielectric layer with chemical mechanical polishing method again, to remove cushion oxide layer and etching
Stop-layer.
Preferably, substrate 1 adulterates for p-type, and the first doped region 5 adulterates for p-type, and the second doped region 6 is n-type doping.It is preferred that
The Doped ions on ground, the first doped region are fluorination boron ion.Preferably, the Doped ions of the second doped region are phosphonium ion.It is preferred that
Ground, the doping process for being fluorinated boron ion are：Ion implantation energy be 10 to 60Kev, ion implantation dosage be 2E12 extremely
2E13atoms/cm2.Preferably, the doping process of phosphonium ion is：Ion implantation energy is 150 to 200Kev, ion implanting agent
Amount is 3E12 to 3E13atoms/cm2.Obviously, the Doped ions of the first doped region and the second doped region can also be this field public affairs
Other ions known.
Preferably, the mode that substrate 1 is generated by extension is made.Particularly, substrate 1 can also directly use doped p-type from
The P type substrate of son.
Preferably, transmission control zone is gate structure 4.For example, the gate structure 4 includes the grid being sequentially located on substrate
Oxide layer and grid, optionally, the material of grid oxic horizon can be silica etc., and the material of grid can be polysilicon etc.,
Chemical vapor deposition method may be used to be formed.Certainly, the gate structure can also use it is well known to those skilled in the art its
Its any structure and manufacture craft are formed, and material can also be selected according to prior art, as long as its object is to make
MOS transistor.
As the second aspect of the application, referring to FIG. 5, a kind of production method of imaging sensor is provided, particularly,
Above-mentioned imaging sensor can be realized using the production method.
This method includes：Step 10, it is formed for isolation structure on substrate 1 to form multiple active areas, active area packet
Include photoelectric area sensor and transmission control zone；Step 20, gate structure is formed in transmission control zone；Step 30, in optoelectronic induction
The first doped region 5 and the second doped region 6 adulterated with substrate 1 is formed in area, wherein the first doped region 5 and/or the second doped region
6 have comb teeth-shaped structure, and optoelectronic induction structure is collectively formed in the first doped region 5 and the second doped region 6, wherein the first doped region 5
It is opposite with the doping type of the second doped region 6.
Incorporated by reference to Fig. 2 to Fig. 4, since the first doped region 5 and/or the second doped region 6 have comb as shown in Figures 2 to 4
Dentalation, thus, the capacitance of photodiode can be increased in limited sizes/areas.Due to the capacitance of photodiode
Increase, therefore, it is possible to receive stronger light without there is a phenomenon where being saturated, thus, image sensing using the above structure
Device, the range of light intensity bigger that the imaging sensor of the range of the light intensity that can be received than in the prior art can receive.
Preferably, production method further includes forming side wall on the side wall of gate structure.
Preferably, comb teeth-shaped structure includes 2 to 4 broach.Preferably, the number of broach is 2.
Preferably, the mode that substrate 1 is generated by extension is made.
Preferably, substrate 1 adulterates for p-type, and the first doped region 5 adulterates for p-type, and the second doped region 6 is n-type doping.
Preferably, the Doped ions of the first doped region are fluorination boron ion.Preferably, it is fluorinated the doping process of boron ion
For：Ion implantation energy is 10 to 60Kev, and ion implantation dosage is 2E12 to 2E13atoms/cm2。
Preferably, the Doped ions of the second doped region are phosphonium ion.Preferably, the doping process of phosphonium ion is：Ion is noted
It is 150 to 200Kev to enter energy, and ion implantation dosage is 3E12 to 3E13atoms/cm2。
The foregoing is merely the preferred embodiments of the application, are not intended to limit this application, for the skill of this field
For art personnel, the application can have various modifications and variations.Within the spirit and principles of this application, any made by repair
Change, equivalent replacement, improvement etc., should be included within the protection domain of the application.
Claims (17)
1. a kind of imaging sensor, including substrate (1), the substrate (1) includes multiple active areas and the multiple for being isolated
The isolation structure (2) of active area, each active area include photoelectric area sensor and transmission control zone, each optoelectronic induction
Area includes the first doped region (5) and the second doped region (6) for being used to form optoelectronic induction structure, wherein first doping
The doping type of area (5) and second doped region (6) on the contrary, the substrate (1) and second doped region (6) doping side
To on the contrary, first doped region (5) is located at the top of second doped region (6),
It is characterized in that,
First doped region (5) and second doped region (6) have comb teeth-shaped structure,
The direction of the comb teeth-shaped structure of first doped region (5) towards second doped region (6) extends and is inserted into described
Two doped regions (6), and the comb teeth-shaped structure of second doped region (6) is directed away from the direction of first doped region (5) and sets
It sets,
The comb teeth-shaped structure of first doped region (5) stretches in the comb teeth-shaped structure of second doped region (6).
2. imaging sensor according to claim 1, which is characterized in that the comb teeth-shaped structure includes 2 to 4 broach.
3. imaging sensor according to claim 2, which is characterized in that the number of the broach is 2.
4. imaging sensor according to claim 1, which is characterized in that the isolation structure (2) is shallow trench isolation knot
Structure.
5. imaging sensor according to claim 1, which is characterized in that the substrate (1) is adulterated for p-type, and described first
Doped region (5) adulterates for p-type, and second doped region (6) is n-type doping.
6. imaging sensor according to claim 1, which is characterized in that the mode system that the substrate (1) is generated by extension
.
7. imaging sensor according to claim 1, which is characterized in that the transmission control zone is gate structure (4).
8. a kind of production method of imaging sensor, which is characterized in that including：
It is formed for isolation structure on substrate (1) to form multiple active areas, the active area includes photoelectric area sensor and biography
Defeated control zone；
Gate structure is formed in the transmission control zone；
The first doped region (5) and the second doped region (6) with the substrate (1) doping are formed in the photoelectric area sensor,
In, first doped region (5) and second doped region (6) have a comb teeth-shaped structure, first doped region (5) and described
Optoelectronic induction structure is collectively formed in second doped region (6), wherein first doped region (5) and second doped region (6)
Doping type on the contrary, the doping direction of the substrate (1) and second doped region (6) on the contrary, first doped region (5) position
In the top of second doped region (6),
The direction of the comb teeth-shaped structure of first doped region (5) towards second doped region (6) extends and is inserted into described
Two doped regions (6), and the comb teeth-shaped structure of second doped region (6) is directed away from the direction of first doped region (5) and sets
It sets, the comb teeth-shaped structure of first doped region (5) stretches in the comb teeth-shaped structure of second doped region (6).
9. production method according to claim 8, which is characterized in that the production method further includes in the gate structure
Side wall on form side wall.
10. production method according to claim 8, which is characterized in that the comb teeth-shaped structure includes 2 to 4 broach.
11. manufacturing method according to claim 10, which is characterized in that the number of the broach is 2.
12. production method according to claim 8, which is characterized in that the mode system that the substrate (1) is generated by extension
.
13. production method according to claim 8, which is characterized in that the substrate (1) is adulterated for p-type, and described first mixes
Miscellaneous area (5) is adulterated for p-type, and second doped region (6) is n-type doping.
14. production method according to claim 13, which is characterized in that the Doped ions of first doped region are fluorination
Boron ion.
15. production method according to claim 13, which is characterized in that the Doped ions of second doped region be phosphorus from
Son.
16. production method according to claim 14, which is characterized in that it is described fluorination boron ion doping process be：From
Sub- Implantation Energy is 10 to 60Kev, and ion implantation dosage is 2E12 to 2E13atoms/cm2。
17. manufacturing method according to claim 15, which is characterized in that the doping process of the phosphonium ion is：Ion is noted
It is 150 to 200Kev to enter energy, and ion implantation dosage is 3E12 to 3E13atoms/cm2。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410101127.2A CN104934450B (en) | 2014-03-18 | 2014-03-18 | Imaging sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410101127.2A CN104934450B (en) | 2014-03-18 | 2014-03-18 | Imaging sensor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104934450A CN104934450A (en) | 2015-09-23 |
| CN104934450B true CN104934450B (en) | 2018-09-18 |
Family
ID=54121537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410101127.2A Active CN104934450B (en) | 2014-03-18 | 2014-03-18 | Imaging sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104934450B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198829A (en) * | 2018-01-29 | 2018-06-22 | 德淮半导体有限公司 | Cmos image sensor and forming method thereof |
| CN108649044A (en) * | 2018-05-09 | 2018-10-12 | 德淮半导体有限公司 | Imaging sensor and the method for forming imaging sensor |
| CN112133714B (en) * | 2020-08-24 | 2024-11-15 | 上海集成电路研发中心有限公司 | Image sensor structure |
| WO2022042030A1 (en) * | 2020-08-24 | 2022-03-03 | 上海集成电路研发中心有限公司 | Image sensor structure |
| CN112133715B (en) * | 2020-08-24 | 2024-08-02 | 上海集成电路研发中心有限公司 | Image sensor structure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054771A (en) * | 2009-11-10 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing complementary metal-oxide semiconductor (CMOS) image sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100712524B1 (en) * | 2005-08-09 | 2007-04-30 | 삼성전자주식회사 | CMOS Image Sensor with Drive Transistor with Extended Gate Surface Area and Manufacturing Method Thereof |
| FR2960341B1 (en) * | 2010-05-18 | 2012-05-11 | E2V Semiconductors | MATRIX IMAGE SENSOR WITH TRANSFER OF DISSYMETRIC GRID LOADS. |
-
2014
- 2014-03-18 CN CN201410101127.2A patent/CN104934450B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054771A (en) * | 2009-11-10 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing complementary metal-oxide semiconductor (CMOS) image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104934450A (en) | 2015-09-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7307327B2 (en) | Reduced crosstalk CMOS image sensors | |
| CN101350358B (en) | Semiconductor device and image sensor device | |
| US8440495B2 (en) | Method for reducing crosstalk in image sensors using implant technology | |
| CN103456752B (en) | Cmos image sensor and forming method thereof | |
| CN101262000B (en) | Image sensor device, method of forming same, and semiconductor device | |
| CN104934450B (en) | Imaging sensor and preparation method thereof | |
| CN101176208A (en) | Colored pixels with anti-blur isolation and method of formation | |
| JP2015041746A (en) | Single photon avalanche diode | |
| CN102376730A (en) | Entrenched transfer gate | |
| EP2919270B1 (en) | Cmos image sensor | |
| TWI740958B (en) | Photogate for front-side-illuminated infrared image sensor and method of manufacturing the same | |
| US9711550B2 (en) | Pinned photodiode with a low dark current | |
| US8124438B2 (en) | Method of fabricating CMOS image sensor | |
| CN109427830A (en) | Light sensor device comprising pixel cells | |
| KR20080062046A (en) | Manufacturing Method of Image Sensor | |
| CN105575981A (en) | image sensor with deep well structure and manufacturing method thereof | |
| CN102437167A (en) | Image sensor and photodiode | |
| US20150130003A1 (en) | Image sensor and method for fabricating the same | |
| CN104795414A (en) | Method for modifying polycrystalline silicon layer by injecting nitrogen | |
| JP7178613B2 (en) | photodetector | |
| CN104269419B (en) | Image sensor and forming method thereof | |
| CN116053289B (en) | Image sensor and method for manufacturing the same | |
| JP7199013B2 (en) | photodetector | |
| JP2012069641A (en) | Solid-state imaging device and method of manufacturing the same | |
| KR20100025873A (en) | Cmos image sensor having crosstalk preventive impurity isolation layer and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |